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Sankaran A, Kapuria N, Beloshapkin S, Ahad SA, Singh S, Geaney H, Ryan KM. Revealing Seed-Mediated Structural Evolution of Copper-Silicide Nanostructures: Generating Structured Current Collectors for Rechargeable Batteries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2310823. [PMID: 38421219 DOI: 10.1002/adma.202310823] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/14/2024] [Indexed: 03/02/2024]
Abstract
Metal silicide thin films and nanostructures typically employed in electronics have recently gained significant attention in battery technology, where they are used as active or inactive materials. However, unlike thin films, the science behind the evolution of silicide nanostructures, especially 1D nanowires (NWs), is a key missing aspect. Cux Siy nanostructures synthesized by solvent vapor growth technique are studied as a model system to gain insights into metal silicide formation. The temperature-dependent phase evolution of Cux Siy structures proceeds from Cu>Cu0.83 Si0.17 >Cu5 Si>Cu15 Si4 . The role of Cu diffusion kinetics on the morphological progression of Cu silicides is studied, revealing that the growth of 1D metal silicide NWs proceeds through an in situ formed, Cu seed-mediated, self-catalytic process. The different Cux Siy morphologies synthesized are utilized as structured current collectors for K-ion battery anodes. Sb deposited by thermal evaporation upon Cu15 Si4 tripod NWs and cube architectures exhibit reversible alloying capacities of 477.3 and 477.6 mAh g-1 at a C/5 rate. Furthermore, Sb deposited Cu15 Si4 tripod NWs anode tested in Li-ion and Na-ion batteries demonstrate reversible capacities of ≈518 and 495 mAh g-1 .
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Affiliation(s)
- Abinaya Sankaran
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Nilotpal Kapuria
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Sergey Beloshapkin
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Syed Abdul Ahad
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Shalini Singh
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Hugh Geaney
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
| | - Kevin M Ryan
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94T9PX, Ireland
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2
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Chou YC, Chen LJ, Tu KN. Uphill Diffusion Induced Point Contact Reaction in Si Nanowires. NANO LETTERS 2022; 22:6895-6899. [PMID: 35972227 DOI: 10.1021/acs.nanolett.2c01265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The events of repeating nucleation in point contact reactions between nanowires of Si and Ni or Co have been revisited here due to uphill diffusion as well as an extremely high supersaturation, over a factor of 1000, needed for the nucleation. Also what is the diameter of the point contact needs to be defined. The stepwise growth of nanoscale epitaxial silicide can occur because the repeating nucleation events are restricted in nanoscale wires.
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Affiliation(s)
- Yi-Chia Chou
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Lih-Juann Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - King-Ning Tu
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 999077, Hong Kong, SAR
- Department of Electrical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 999077, Hong Kong, SAR
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3
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Yang CY, Yang SM, Chen YY, Lu KC. Fabrication and Physical Properties of Single-Crystalline Βeta-FeSi 2 Nanowires. NANOSCALE RESEARCH LETTERS 2020; 15:197. [PMID: 33052458 PMCID: PMC7560652 DOI: 10.1186/s11671-020-03425-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Accepted: 09/27/2020] [Indexed: 06/11/2023]
Abstract
In this study, self-catalyzed β-FeSi2 nanowires, having been wanted but seldom achieved in a furnace, were synthesized via chemical vapor deposition method where the fabrication of β-FeSi2 nanowires occurred on Si (100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders at 750-950 °C. We carefully varied temperatures, duration time, and the flow rates of carrier gases to control and investigate the growth of the nanowires. The morphology of the β-FeSi2 nanowires was observed with scanning electron microscopy (SEM), while the structure of them was analyzed with X-ray diffraction (XRD) and transmission electron microscopy (TEM). The growth mechanism has been proposed and the physical properties of the iron disilicide nanowires were measured as well. In terms of the magnetization of β-FeSi2, nanowires were found to be different from bulk and thin film; additionally, longer β-FeSi2 nanowires possessed better magnetic properties, showing the room-temperature ferromagnetic behavior. Field emission measurements demonstrate that β-FeSi2 nanowires can be applied in field emitters.
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Affiliation(s)
- Chih-Yung Yang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
| | - Shu-Meng Yang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
| | - Yu-Yang Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan.
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan.
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Huang WJ, Chen YY, Hsu HM, Lu KC. Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition. MATERIALS 2018; 11:ma11122384. [PMID: 30486400 PMCID: PMC6316962 DOI: 10.3390/ma11122384] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2018] [Revised: 11/19/2018] [Accepted: 11/23/2018] [Indexed: 11/16/2022]
Abstract
In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with chemical vapor deposition; remarkably, the latter has drawn much attention but has seldom been achieved. We also propose the formation mechanisms for the two phases. To investigate the effects of the growth parameters on compositions and morphologies of the iron silicide nanowires, we changed and studied the reaction time, substrate temperature, position of samples, and pressure. The reaction concentration was found to be altered by all of the parameters; thus, we observed different nanowires in terms of morphologies and compositions with scanning electron microscopy. To confirm the growth direction and crystal structure of the nanowires, we conducted x-ray diffraction and high-resolution transmission electron microscopy studies. With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. Understanding the effects of these growth parameters facilitates the control of nanowire growth with better quality.
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Affiliation(s)
- Wei-Jie Huang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
| | - Yu-Yang Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
| | - Hsiu-Ming Hsu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan.
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5
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Chen YH, Huang CW, Yeh PH, Chen JY, Lin TY, Chang CF, Wu WW. A solid-state cation exchange reaction to form multiple metal oxide heterostructure nanowires. NANOSCALE 2016; 8:17039-17043. [PMID: 27714036 DOI: 10.1039/c6nr01287f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Metal oxide nanostructures have been investigated extensively due to their wide range of physical properties; zinc oxide is one of the most promising materials. It exhibits fascinating functional properties and various types of morphologies. In particular, ZnO heterostructures have attracted great attention because their performance can be modified and further improved by the addition of other materials. In this study, we successfully transformed ZnO nanowires (NWs) into multiple ZnO/Al2O3 heterostructure NWs via a solid-state cation exchange reaction. The experiment was carried out in situ via an ultrahigh vacuum transmission electron microscope (UHV-TEM), which was equipped with a video recorder. Moreover, we analyzed the structure and composition of the heterostructure NWs by Cs-corrected STEM equipped with EDS. Based on these experimental results, we inferred a cation exchange reaction ion path model. Additionally, we investigated the defects that appeared after the cation reaction, which resulted from the remaining zinc ions. These multiple heterostructure ZnO/Al2O3 NWs exhibited excellent UV sensing sensitivity and efficiency.
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Affiliation(s)
- Y H Chen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - C W Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - P H Yeh
- Department of Physics, Tam Kang University, New Taipei 251, Taiwan
| | - J Y Chen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - T Y Lin
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - C F Chang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - W W Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
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6
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Dasog M, Carim AI, Yalamanchili S, Atwater HA, Lewis NS. Profiling Photoinduced Carrier Generation in Semiconductor Microwire Arrays via Photoelectrochemical Metal Deposition. NANO LETTERS 2016; 16:5015-5021. [PMID: 27322391 DOI: 10.1021/acs.nanolett.6b01782] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Au was photoelectrochemically deposited onto cylindrical or tapered p-Si microwires on Si substrates to profile the photoinduced charge-carrier generation in individual wires in a photoactive semiconductor wire array. Similar experiments were repeated for otherwise identical Si microwires doped to be n-type. The metal plating profile was conformal for n-type wires, but for p-type wires was a function of distance from the substrate and was dependent on the illumination wavelength. Spatially resolved charge-carrier generation profiles were computed using full-wave electromagnetic simulations, and the localization of the deposition at the p-type wire surfaces observed experimentally correlated well with the regions of enhanced calculated carrier generation in the volumes of the microwires. This technique could potentially be extended to determine the spatially resolved carrier generation profiles in a variety of mesostructured, photoactive semiconductors.
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Affiliation(s)
- Mita Dasog
- Division of Chemistry and Chemical Engineering, ‡Division of Engineering and Applied Sciences, ∥Kavli Nanoscience Institute, and ⊥Beckman Institute, California Institute of Technology , Pasadena, California 91125, United States
| | - Azhar I Carim
- Division of Chemistry and Chemical Engineering, ‡Division of Engineering and Applied Sciences, ∥Kavli Nanoscience Institute, and ⊥Beckman Institute, California Institute of Technology , Pasadena, California 91125, United States
| | | | | | - Nathan S Lewis
- Division of Chemistry and Chemical Engineering, ‡Division of Engineering and Applied Sciences, ∥Kavli Nanoscience Institute, and ⊥Beckman Institute, California Institute of Technology , Pasadena, California 91125, United States
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7
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Wu YT, Huang CW, Chiu CH, Chang CF, Chen JY, Lin TY, Huang YT, Lu KC, Yeh PH, Wu WW. Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications. NANO LETTERS 2016; 16:1086-91. [PMID: 26789624 DOI: 10.1021/acs.nanolett.5b04309] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.
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Affiliation(s)
- Yen-Ting Wu
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chung-Hua Chiu
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chia-Fu Chang
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Ting-Yi Lin
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yu-Ting Huang
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University , No. 1, University Road, Tainan City 70101, Taiwan
| | - Ping-Hung Yeh
- Department of Physics, Tamkang University , No. 151, Yingzhuan Road, Tamsui District, New Taipei City 25137, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
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8
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Chou YC, Tang W, Chiou CJ, Chen K, Minor AM, Tu KN. Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions. NANO LETTERS 2015; 15:4121-4128. [PMID: 25965773 DOI: 10.1021/acs.nanolett.5b01234] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.
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Affiliation(s)
- Yi-Chia Chou
- †Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Wei Tang
- ‡Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Chien-Jyun Chiou
- †Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Kai Chen
- §National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- ∥Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Andrew M Minor
- §National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - K N Tu
- ‡Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
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9
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Hsieh YH, Chiu CH, Huang CW, Chen JY, Lin WJ, Wu WW. Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures. NANOSCALE 2015; 7:1776-1781. [PMID: 25519809 DOI: 10.1039/c4nr06084a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.
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Affiliation(s)
- Yu-Hsun Hsieh
- Department of Materials Science and Engineering, National Chiao Tung University, No. 1001, University Rd., East Dist., Hsinchu City 300, Taiwan.
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10
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Hsu HF, Tsai PC, Lu KC. Single-crystalline chromium silicide nanowires and their physical properties. NANOSCALE RESEARCH LETTERS 2015; 10:50. [PMID: 25852347 PMCID: PMC4385120 DOI: 10.1186/s11671-015-0776-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2014] [Accepted: 01/21/2015] [Indexed: 06/04/2023]
Abstract
In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.
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Affiliation(s)
- Han-Fu Hsu
- />Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan
| | - Ping-Chen Tsai
- />Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan
| | - Kuo-Chang Lu
- />Department of Materials Science and Engineering, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan
- />Center for Micro/Nano Science and Technology, National Cheng Kung University, No.1, University Rd, Tainan, 701 Taiwan
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11
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Lin JY, Hsu HM, Lu KC. Growth of single-crystalline nickel silicide nanowires with excellent physical properties. CrystEngComm 2015. [DOI: 10.1039/c4ce02513j] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Single-crystalline NiSi2, Ni2Si and Ni31Si12 nanowires with outstanding characteristics were synthesized through a nickel transport chemical vapor deposition method.
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Affiliation(s)
- Jen-Yi Lin
- Department of Materials Science and Engineering
- National Cheng Kung University
- Tainan City 701, Taiwan
| | - Hsiu-Ming Hsu
- Department of Materials Science and Engineering
- National Cheng Kung University
- Tainan City 701, Taiwan
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering
- National Cheng Kung University
- Tainan City 701, Taiwan
- Center for Micro/Nano Science and Technology
- National Cheng Kung University
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12
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Huang CW, Chen JY, Chiu CH, Wu WW. Revealing controllable nanowire transformation through cationic exchange for RRAM application. NANO LETTERS 2014; 14:2759-63. [PMID: 24742102 DOI: 10.1021/nl500749q] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
One dimensional metal oxide nanostructures have attracted much attention owing to their fascinating functional properties. Among them, piezoelectricity and photocatalysts along with their related materials have stirred significant interests and widespread studies in recent years. In this work, we successfully transformed piezoelectric ZnO into photocatalytic TiO2 and formed TiO2/ZnO axial heterostructure nanowires with flat interfaces by solid to solid cationic exchange reactions in high vacuum (approximately 10(-8) Torr) transmission electron microscope (TEM). Kinetic behavior of the single crystalline TiO2 was systematically analyzed. The nanoscale growth rate of TiO2 has been measured using in situ TEM videos. On the basis of the rate, we can control the dimensions of the axial-nanoheterostructure. In addition, the unique Pt/ ZnO / TiO2/ ZnO /Pt heterostructures with complementary resistive switching (CRS) characteristics were designed to solve the important issue of sneak-peak current. The resistive switching behavior was attributed to the migration of oxygen and TiO2 layer served as reservoir, which was confirmed by energy dispersive spectrometry (EDS) analysis. This study not only supplied a distinct method to explore the transformation mechanisms but also exhibited the potential application of ZnO/TiO2 heterostructure in nanoscale crossbar array resistive random-access memory (RRAM).
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Affiliation(s)
- Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 300, Taiwan
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13
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Tang W, Picraux ST, Huang JY, Liu X, Tu KN, Dayeh SA. Gold catalyzed nickel disilicide formation: a new solid-liquid-solid phase growth mechanism. NANO LETTERS 2013; 13:6009-6015. [PMID: 24274698 DOI: 10.1021/nl4032023] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The vapor-liquid-solid (VLS) mechanism is the predominate growth mechanism for semiconductor nanowires (NWs). We report here a new solid-liquid-solid (SLS) growth mechanism of a silicide phase in Si NWs using in situ transmission electron microcopy (TEM). The new SLS mechanism is analogous to the VLS one in relying on a liquid-mediating growth seed, but it is fundamentally different in terms of nucleation and mass transport. In SLS growth of Ni disilicide, the Ni atoms are supplied from remote Ni particles by interstitial diffusion through a Si NW to the pre-existing Au-Si liquid alloy drop at the tip of the NW. Upon supersaturation of both Ni and Si in Au, an octahedral nucleus of Ni disilicide (NiSi2) forms at the center of the Au liquid alloy, which thereafter sweeps through the Si NW and transforms Si into NiSi2. The dissolution of Si by the Au alloy liquid mediating layer proceeds with contact angle oscillation at the triple point where Si, oxide of Si, and the Au alloy meet, whereas NiSi2 is grown from the liquid mediating layer in an atomic stepwise manner. By using in situ quenching experiments, we are able to measure the solubility of Ni and Si in the Au-Ni-Si ternary alloy. The Au-catalyzed mechanism can lower the formation temperature of NiSi2 by 100 °C compared with an all solid state reaction.
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Affiliation(s)
- Wei Tang
- Department of Materials Science and Engineering, University of California, Los Angeles , Los Angeles, California 90024, United States
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14
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Lu CM, Hsu HF, Lu KC. Growth of single-crystalline cobalt silicide nanowires and their field emission property. NANOSCALE RESEARCH LETTERS 2013; 8:308. [PMID: 23819795 PMCID: PMC3710505 DOI: 10.1186/1556-276x-8-308] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/21/2013] [Accepted: 06/27/2013] [Indexed: 06/02/2023]
Abstract
In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.
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Affiliation(s)
- Chi-Ming Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Han-Fu Hsu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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15
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Chiu WL, Chiu CH, Chen JY, Huang CW, Huang YT, Lu KC, Hsin CL, Yeh PH, Wu WW. Single-crystalline δ-Ni2Si nanowires with excellent physical properties. NANOSCALE RESEARCH LETTERS 2013; 8:290. [PMID: 23782805 PMCID: PMC3691636 DOI: 10.1186/1556-276x-8-290] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2013] [Accepted: 06/07/2013] [Indexed: 05/23/2023]
Abstract
In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.
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Affiliation(s)
- Wen-Li Chiu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Chung-Hua Chiu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Yu-Ting Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
| | - Cheng-Lun Hsin
- Department of Electrical Engineering, National Central University, Tao Yuan, 320, Taiwan
| | - Ping-Hung Yeh
- Department of Physics, Tamkang University, New Taipei City, 25137, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
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16
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Chiu CH, Huang CW, Chen JY, Huang YT, Hu JC, Chen LT, Hsin CL, Wu WW. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties. NANOSCALE 2013; 5:5086-92. [PMID: 23640615 DOI: 10.1039/c3nr33302g] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.
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Affiliation(s)
- Chung-Hua Chiu
- Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist., Hsinchu City 300, Taiwan
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17
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Hsu HF, Huang WR, Chen TH, Wu HY, Chen CA. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction. NANOSCALE RESEARCH LETTERS 2013; 8:224. [PMID: 23663726 PMCID: PMC3695794 DOI: 10.1186/1556-276x-8-224] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2013] [Accepted: 05/03/2013] [Indexed: 06/02/2023]
Abstract
This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.
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Affiliation(s)
- Hsun-Feng Hsu
- Department of Materials Science and Engineering, National Chung Hsing
University, Taichung 40227, Taiwan
| | - Wan-Ru Huang
- Department of Materials Science and Engineering, National Chung Hsing
University, Taichung 40227, Taiwan
| | - Ting-Hsuan Chen
- Department of Materials Science and Engineering, National Chung Hsing
University, Taichung 40227, Taiwan
| | - Hwang-Yuan Wu
- Department of Materials Science and Engineering, National Chung Hsing
University, Taichung 40227, Taiwan
| | - Chun-An Chen
- Department of Materials Science and Engineering, National Chung Hsing
University, Taichung 40227, Taiwan
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18
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Huang YT, Yu SY, Hsin CL, Huang CW, Kang CF, Chu FH, Chen JY, Hu JC, Chen LT, He JH, Wu WW. In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories. Anal Chem 2013; 85:3955-60. [DOI: 10.1021/ac303528m] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Yu-Ting Huang
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
| | - Shih-Ying Yu
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
| | - Cheng-Lun Hsin
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
- Department of Electrical Engineering, National Central University, Number 300, Jhongda Road,
Jhongli, Taoyuan, Taiwan 32001, R.O.C
| | - Chun-Wei Huang
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
| | - Chen-Fang Kang
- Institute of Photonics and Optoelectronics, National Taiwan University, Number 1, Sec. 4, Roosevelt
Road, Taipei, Taiwan 10617, R.O.C
| | - Fu-Hsuan Chu
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
| | - Jui-Yuan Chen
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
| | - Jung-Chih Hu
- Nanotechnology Research Center, Industrial Technology Institute (ITRI), Chutung, Hsinchu,
Taiwan 31040, R.O.C
| | - Lien-Tai Chen
- Nanotechnology Research Center, Industrial Technology Institute (ITRI), Chutung, Hsinchu,
Taiwan 31040, R.O.C
| | - Jr-Hau He
- Institute of Photonics and Optoelectronics, National Taiwan University, Number 1, Sec. 4, Roosevelt
Road, Taipei, Taiwan 10617, R.O.C
| | - Wen-Wei Wu
- Department
of Materials Science
and Engineering, National Chiao Tung University, Number 1001, University Road, Hsinchu, Taiwan 30010, R.O.C
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19
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In Situ Real-Time TEM Reveals Growth, Transformation and Function in One-Dimensional Nanoscale Materials: From a Nanotechnology Perspective. ACTA ACUST UNITED AC 2013. [DOI: 10.1155/2013/893060] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
This paper summarises recent developments in in situ TEM instrumentation and operation conditions. The focus of the discussion is on demonstrating how improved understanding of fundamental physical phenomena associated with nanowire or nanotube materials, revealed by following transformations in real time and high resolution, can assist the engineering of emerging electronic and optoelectronic devices. Special attention is given to Si, Ge, and compound semiconductor nanowires and carbon nanotubes (CNTs) as one of the most promising building blocks for devices inspired by nanotechnology.
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20
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Huang CW, Hsin CL, Wang CW, Chu FH, Kao CY, Chen JY, Huang YT, Lu KC, Wu WW, Chen LJ. Direct observation of melting behaviors at the nanoscale under electron beam and heat to form hollow nanostructures. NANOSCALE 2012; 4:4702-4706. [PMID: 22744608 DOI: 10.1039/c2nr30724c] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We report the melting behaviours of ZnO nanowire by heating ZnO-Al(2)O(3) core-shell heterostructures to form Al(2)O(3) nanotubes in an in situ ultrahigh vacuum transmission electron microscope (UHV-TEM). When the ZnO-Al(2)O(3) core-shell nanowire heterostructures were annealed at 600 °C under electron irradiation, the amorphous Al(2)O(3) shell became single crystalline and then the ZnO core melted. The average vanishing rate of the ZnO core was measured to be 4.2 nm s(-1). The thickness of the Al(2)O(3) nanotubes can be precisely controlled by the deposition process. Additionally, the inner geometry of nanotubes can be defined by the initial ZnO core. The result shows a promising method to obtain the biocompatible Al(2)O(3) nanotubes, which may be applied in drug delivery, biochemistry and resistive switching random access memory (ReRAM).
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Affiliation(s)
- Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist., Hsinchu City 300, Taiwan
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21
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Tsai CY, Yu SY, Hsin CL, Huang CW, Wang CW, Wu WW. Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures. CrystEngComm 2012. [DOI: 10.1039/c1ce06107k] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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22
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Chen SY, Yeh PH, Wu WW, Chen US, Chueh YL, Yang YC, Gwo S, Chen LJ. Low resistivity metal silicide nanowires with extraordinarily high aspect ratio for future nanoelectronic devices. ACS NANO 2011; 5:9202-9207. [PMID: 22010967 DOI: 10.1021/nn203445p] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi(2), which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.
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Affiliation(s)
- Sheng-Yu Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China
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23
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Hsin CL, Lee WF, Huang CT, Huang CW, Wu WW, Chen LJ. Growth of CuInSe2 and In2Se3/CuInSe2 nano-heterostructures through solid state reactions. NANO LETTERS 2011; 11:4348-51. [PMID: 21859092 DOI: 10.1021/nl202463w] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In(2)Se(3) nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe(2) NBs with ultrahigh vacuum transmission electron microscopy, we observed the In(2)Se(3)/CuInSe(2) transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In(2)Se(3)/CuInSe(2) nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In(2)Se(3)/CuInSe(2) nano-heterostructures.
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Affiliation(s)
- Cheng-Lun Hsin
- Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 300, Taiwan, Republic of China
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24
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Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN. The influence of surface oxide on the growth of metal/semiconductor nanowires. NANO LETTERS 2011; 11:2753-8. [PMID: 21657260 DOI: 10.1021/nl201037m] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
We report the critical effects of oxide on the growth of nanostructures through silicide formation. Under an in situ ultrahigh vacuum transmission electron microscope, it is observed from the conversion of Si nanowires into the metallic PtSi grains epitaxially through controlled reactions between lithographically defined Pt pads and Si nanowires. With oxide, instead of contact area, single crystal PtSi grains start forming either near the center between two adjacent pads or from the ends of Si nanowires, resulting in the heterostructure formation of Si/PtSi/Si. Without oxide, transformation from Si into PtSi begins at the contact area between them, resulting in the heterostructure formation of PtSi/Si/PtSi. The nanowire heterostructures have an atomically sharp interface with epitaxial relationships of Si(20-2)//PtSi(10-1) and Si[111]//PtSi[111]. Additionally, it has been observed that the existence of oxide significantly affects not only the growth position but also the growth behavior and the growth rate by two orders of magnitude. Molecular dynamics simulations have been performed to support our experimental results and the proposed growth mechanisms. In addition to fundamental science, the significance of the study matters for future processing techniques in nanotechnology and related applications as well.
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Affiliation(s)
- Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
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