1
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Huang L, Gan Y. A review on SEM imaging of graphene layers. Micron 2024; 187:103716. [PMID: 39276729 DOI: 10.1016/j.micron.2024.103716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 09/03/2024] [Accepted: 09/06/2024] [Indexed: 09/17/2024]
Abstract
Atomic-thick graphene has stimulated great interests for exploring fundamental science and technological applications due to its promising electronic, mechanical and thermal properties. It is important to gain a deeper understanding of geometrical/structural characteristics of graphene and its properties/performance. Scanning electron microscopy (SEM) is indispensable for characterizing graphene layers. This review details SEM imaging of graphene layer, including the SEM image contrast mechanism of graphene layers, imaging parameter-dependent contrast of graphene layers and the influence of polycrystalline substrates on image contrast. Furthermore, a summary of SEM applications in imaging graphene layers is also provided, including layer-number determinations, study of chemical vapor deposition (CVD)-growth mechanism, and reveal of anti-corrosive failure mechanism of graphene layers. This review will provide a systematic and comprehensive understanding on SEM imaging of graphene layers for graphene community.
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Affiliation(s)
- Li Huang
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology, Tianjin 300130, PR China.
| | - Yang Gan
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, PR China; MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, PR China
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2
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Xue J, Tong J, Gao Z, Chen Z, Fang H, Wang S, Zhi T, Wang J. Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses. FRONTIERS OF OPTOELECTRONICS 2024; 17:17. [PMID: 38847978 PMCID: PMC11161448 DOI: 10.1007/s12200-024-00121-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Accepted: 05/14/2024] [Indexed: 06/10/2024]
Abstract
An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current-voltage (I-V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.
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Affiliation(s)
- Junjun Xue
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jiaming Tong
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhujun Gao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhouyu Chen
- Portland Institute, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Haoyu Fang
- Portland Institute, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Saisai Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jin Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
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3
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Liu B, Ma S. Precise synthesis of graphene by chemical vapor deposition. NANOSCALE 2024; 16:4407-4433. [PMID: 38291992 DOI: 10.1039/d3nr06041a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.
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Affiliation(s)
- Bing Liu
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
| | - Siguang Ma
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
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4
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Hu L, Dong Y, Xie Y, Qian F, Chang P, Fan M, Deng J, Xu C. In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 °C for Wafer-Scale Optoelectronic Device Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206738. [PMID: 36592430 DOI: 10.1002/smll.202206738] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 12/08/2022] [Indexed: 06/17/2023]
Abstract
The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V2 O5 ) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V2 O5 film. Density functional theory is used to quantitatively analyze the catalytic effect of V2 O5 . Due to the high resistance property of V2 O5 at room temperature, the obtained graphene can be directly used in devices with V2 O5 as an intercalation layer. A wafer-scale graphene-V2 O5 -Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W-1 at 0 V bias and 420 mA W-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.
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Affiliation(s)
- Liangchen Hu
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
| | - Yibo Dong
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yiyang Xie
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
| | - Fengsong Qian
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
| | - Pengying Chang
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
| | - Mengqi Fan
- School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Jun Deng
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
| | - Chen Xu
- Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing, 100124, China
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5
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Guli M, Helmy ET, Schneider J, Lu G, Pan JH. Characterization Methodology and Activity Evaluation of Solar-Driven Catalysts for Environmental Remediation. Top Curr Chem (Cham) 2022; 380:39. [PMID: 35951266 DOI: 10.1007/s41061-022-00394-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 05/31/2022] [Indexed: 10/15/2022]
Abstract
Solar-driven photocatalysis mediated by semiconductors has been rapidly developed as a green and sustainable technology for environmental remediation. Continuous efforts have been devoted to novel semiconducting photocatalysts to boost the efficiency of the photocatalytic system. However, controversy has widely existed in materials characterization and photocatalytic activity evaluation. This review overviews the recent advances in characterization methodology and photocatalytic activity evaluation of solar-driven catalysts (SDCs) for environmental remediation. After a general and brief introduction of different SDCs, the compositional, structural, and optical characterizations of SDCs are summarized. Moreover, the characterization methods and challenges in the doped and coupled SDCs are discussed. Finally, the challenges in the evaluation of current evaluation methods for the photocatalytic activity of SDCs are highlighted.
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Affiliation(s)
- Mina Guli
- Beijing Key Laboratory of Novel Thin Film Solar Cells, North China Electric Power University, Beijing, 102206, China
| | - Elsayed T Helmy
- Beijing Key Laboratory of Novel Thin Film Solar Cells, North China Electric Power University, Beijing, 102206, China.,Environment Division, National Institute of Oceanography and Fisheries, KayetBey, Elanfoushy, Alexandria, Egypt
| | - Jenny Schneider
- Department of Chemistry, Ludwig-Maximilians-Universität (LMU) München, Butenandtstraße 1 11, 81377, Munich, Germany
| | - Gui Lu
- Beijing Key Laboratory of Novel Thin Film Solar Cells, North China Electric Power University, Beijing, 102206, China. .,School of Energy, Power and Mechanical Engineering, North China Electric Power University, Beijing, 102206, China.
| | - Jia Hong Pan
- Beijing Key Laboratory of Novel Thin Film Solar Cells, North China Electric Power University, Beijing, 102206, China.
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6
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Pizzocchero F, Jessen BS, Gammelgaard L, Andryieuski A, Whelan PR, Shivayogimath A, Caridad JM, Kling J, Petrone N, Tang PT, Malureanu R, Hone J, Booth TJ, Lavrinenko A, Bøggild P. Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly. ACS OMEGA 2022; 7:22626-22632. [PMID: 35811885 PMCID: PMC9260747 DOI: 10.1021/acsomega.2c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
The purity and morphology of the copper surface is important for the synthesis of high-quality, large-grained graphene by chemical vapor deposition. We find that atomically smooth copper foils-fabricated by physical vapor deposition and subsequent electroplating of copper on silicon wafer templates-exhibit strongly reduced surface roughness after the annealing of the copper catalyst, and correspondingly lower nucleation and defect density of the graphene film, when compared to commercial cold-rolled copper foils. The "ultrafoils"-ultraflat foils-facilitate easier dry pickup and encapsulation of graphene by hexagonal boron nitride, which we believe is due to the lower roughness of the catalyst surface promoting a conformal interface and subsequent stronger van der Waals adhesion between graphene and hexagonal boron nitride.
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Affiliation(s)
- Filippo Pizzocchero
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Bjarke S. Jessen
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Lene Gammelgaard
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Andryieuski
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Patrick R. Whelan
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Materials and Production, Aalborg University, Skjernvej 4A, Aalborg 9220, Denmark
| | - Abhay Shivayogimath
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - José M. Caridad
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Applied Physics and USAL NanoLab, University
of Salamanca, 37008 Salamanca, Spain
| | - Jens Kling
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Nanolab, Technical University of Denmark, Fysikvej 307, Kongens Lyngby 2800, Denmark
| | - Nicholas Petrone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Peter T. Tang
- IPU,
Danmarks Tekniske Universitet, Produktionstorvet 425, Kongens Lyngby 2800 Denmark
| | - Radu Malureanu
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - James Hone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Timothy J. Booth
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Lavrinenko
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Peter Bøggild
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
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7
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Zhang Q, Xiao X, Li L, Geng D, Chen W, Hu W. Additive-Assisted Growth of Scaled and Quality 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107241. [PMID: 35092150 DOI: 10.1002/smll.202107241] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/19/2021] [Indexed: 06/14/2023]
Abstract
2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.
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Affiliation(s)
- Qing Zhang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xixi Xiao
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
| | - Dechao Geng
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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8
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Growth and Characterization of Graphene Layers on Different Kinds of Copper Surfaces. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27061789. [PMID: 35335154 PMCID: PMC8956068 DOI: 10.3390/molecules27061789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Revised: 02/26/2022] [Accepted: 03/07/2022] [Indexed: 11/17/2022]
Abstract
Graphene films were grown by chemical vapor deposition on Cu foil. The obtained samples were characterized by Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy and electron back-scatter diffraction. We discuss the time-dependent changes in the samples, estimate the thickness of emerging Cu2O beneath the graphene and check the orientation-dependent affinity to oxidation of distinct Cu grains, which also governs the manner in which the initial strong Cu-graphene coupling and strain in the graphene lattice is released. Effects of electropolishing on the quality and the Raman response of the grown graphene layers are studied by microtexture polarization analysis. The obtained data are compared with the Raman signal of graphene after transfer on glass substrate revealing the complex interaction of graphene with the Cu substrate.
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9
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Pedrazzetti L, Gibertini E, Bizzoni F, Russo V, Lucotti A, Nobili L, Magagnin L. Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD. MATERIALS 2022; 15:ma15041572. [PMID: 35208110 PMCID: PMC8878375 DOI: 10.3390/ma15041572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 02/15/2022] [Accepted: 02/16/2022] [Indexed: 11/29/2022]
Abstract
Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified.
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Affiliation(s)
- Lorenzo Pedrazzetti
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Eugenio Gibertini
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Fabio Bizzoni
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Valeria Russo
- Energy Department, Politecnico di Milano, 20133 Milano, Italy;
| | - Andrea Lucotti
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
| | - Luca Nobili
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
- Correspondence:
| | - Luca Magagnin
- Department of Chemistry, Materials and Chemical Engineering “Giulio Natta”, Politecnico di Milano, 20131 Milano, Italy; (L.P.); (E.G.); (F.B.); (A.L.); (L.M.)
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10
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Yao W, Zhang J, Ji J, Yang H, Zhou B, Chen X, Bøggild P, Jepsen PU, Tang J, Wang F, Zhang L, Liu J, Wu B, Dong J, Liu Y. Bottom-Up-Etching-Mediated Synthesis of Large-Scale Pure Monolayer Graphene on Cyclic-Polishing-Annealed Cu(111). ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108608. [PMID: 34820918 DOI: 10.1002/adma.202108608] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 11/22/2021] [Indexed: 06/13/2023]
Abstract
Synthesis of large-scale single-crystalline graphene monolayers without multilayers involves the fabrication of proper single-crystalline substrates and the ubiquitous formation of multilayered graphene islands during chemical vapor deposition. Here, a method of cyclic electrochemical polishing combined with thermal annealing, which allows the conversion of commercial polycrystalline Cu foils to single-crystal Cu(111) with an almost 100% yield, is presented. A global "bottom-up-etching" method that is capable of fabricating large-area pure single-crystalline graphene monolayers without multilayers through selectively etching bottom multilayered graphene underneath large area as-grown graphene monolayer on Cu(111) surface is demonstrated. Terahertz time-domain spectroscopy (THz-TDS) measurement of the pure monolayer graphene film shows a high average sheet conductivity of 2.8 mS and mean carrier mobility of 6903 cm2 V-1 s-1 over a large area. Density functional theory (DFT) calculations show that the selective etching is induced by the much easier diffusion of hydrogen atoms than hydrocarbon radicals across the edges of the top graphene layer, and the simulated selective etching processes based on phase field modeling are well consistent with experimental observations. This work provides new ways toward the production of single-crystal Cu(111) and the synthesis of pure monolayer graphene with high electronic quality.
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Affiliation(s)
- Wenqian Yao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianing Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jie Ji
- Department of Physics, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - He Yang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
| | - Binbin Zhou
- Department of Photonics, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - Xin Chen
- Department of Physics, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - Peter Bøggild
- Department of Physics, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - Peter U Jepsen
- Department of Photonics, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - Jilin Tang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Fuyi Wang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Li Zhang
- Analytical Instrumentation Center, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jiahui Liu
- Analytical Instrumentation Center, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, 100190, P. R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
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11
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Chau TK, Suh D, Kang H. Quantum Hall Effect across Graphene Grain Boundary. MATERIALS (BASEL, SWITZERLAND) 2021; 15:8. [PMID: 35009154 PMCID: PMC8745786 DOI: 10.3390/ma15010008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 12/17/2021] [Accepted: 12/18/2021] [Indexed: 06/14/2023]
Abstract
Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.
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Affiliation(s)
- Tuan Khanh Chau
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea;
| | - Dongseok Suh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea;
| | - Haeyong Kang
- Department of Physics, Pusan National University, Busan 46241, Korea
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12
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Abstract
Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.
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Affiliation(s)
- Yang Gao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yang Liu
- Cyber Security Research Centre, Nanyang Technological University, Singapore 639798, Singapore.,School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore.,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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13
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Single-crystal, large-area, fold-free monolayer graphene. Nature 2021; 596:519-524. [PMID: 34433942 DOI: 10.1038/s41586-021-03753-3] [Citation(s) in RCA: 106] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Accepted: 06/22/2021] [Indexed: 11/08/2022]
Abstract
Chemical vapour deposition of carbon-containing precursors on metal substrates is currently the most promising route for the scalable synthesis of large-area, high-quality graphene films1. However, there are usually some imperfections present in the resulting films: grain boundaries, regions with additional layers (adlayers), and wrinkles or folds, all of which can degrade the performance of graphene in various applications2-7. There have been numerous studies on ways to eliminate grain boundaries8,9 and adlayers10-12, but graphene folds have been less investigated. Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu-Ni(111) foils. We identify a critical growth temperature (1,030 kelvin) above which folds will naturally form during the subsequent cooling process. Specifically, the compressive stress that builds up owing to thermal contraction during cooling is released by the abrupt onset of step bunching in the foil at about 1,030 kelvin, triggering the formation of graphene folds perpendicular to the step edge direction. By restricting the initial growth temperature to between 1,000 kelvin and 1,030 kelvin, we can produce large areas of single-crystal monolayer graphene films that are high-quality and fold-free. The resulting films show highly uniform transport properties: field-effect transistors prepared from these films exhibit average room-temperature carrier mobilities of around (7.0 ± 1.0) × 103 centimetres squared per volt per second for both holes and electrons. The process is also scalable, permitting simultaneous growth of graphene of the same quality on multiple foils stacked in parallel. After electrochemical transfer of the graphene films from the foils, the foils themselves can be reused essentially indefinitely for further graphene growth.
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14
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Kim JY, Hong D, Lee JC, Kim HG, Lee S, Shin S, Kim B, Lee H, Kim M, Oh J, Lee GD, Nam DH, Joo YC. Quasi-graphitic carbon shell-induced Cu confinement promotes electrocatalytic CO 2 reduction toward C 2+ products. Nat Commun 2021; 12:3765. [PMID: 34155218 PMCID: PMC8217160 DOI: 10.1038/s41467-021-24105-9] [Citation(s) in RCA: 67] [Impact Index Per Article: 22.3] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Accepted: 05/28/2021] [Indexed: 11/17/2022] Open
Abstract
For steady electroconversion to value-added chemical products with high efficiency, electrocatalyst reconstruction during electrochemical reactions is a critical issue in catalyst design strategies. Here, we report a reconstruction-immunized catalyst system in which Cu nanoparticles are protected by a quasi-graphitic C shell. This C shell epitaxially grew on Cu with quasi-graphitic bonding via a gas–solid reaction governed by the CO (g) - CO2 (g) - C (s) equilibrium. The quasi-graphitic C shell-coated Cu was stable during the CO2 reduction reaction and provided a platform for rational material design. C2+ product selectivity could be additionally improved by doping p-block elements. These elements modulated the electronic structure of the Cu surface and its binding properties, which can affect the intermediate binding and CO dimerization barrier. B-modified Cu attained a 68.1% Faradaic efficiency for C2H4 at −0.55 V (vs RHE) and a C2H4 cathodic power conversion efficiency of 44.0%. In the case of N-modified Cu, an improved C2+ selectivity of 82.3% at a partial current density of 329.2 mA/cm2 was acquired. Quasi-graphitic C shells, which enable surface stabilization and inner element doping, can realize stable CO2-to-C2H4 conversion over 180 h and allow practical application of electrocatalysts for renewable energy conversion. Surface reconstruction of electrocatalysts is an important issue for electroconversion of carbon dioxide to value-added chemical products. Here the authors address this issue by using copper nanoparticles protected by self-formed quasi graphitic carbon shell for stable CO2 to C2H4 conversion.
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Affiliation(s)
- Ji-Yong Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Deokgi Hong
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Jae-Chan Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Hyoung Gyun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Sungwoo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Sangyong Shin
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
| | - Hyunjoo Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
| | - Gun-Do Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea. .,Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, Republic of Korea.
| | - Dae-Hyun Nam
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, Republic of Korea.
| | - Young-Chang Joo
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea. .,Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, Republic of Korea. .,Advanced Institute of Convergence Technology, Suwon, Republic of Korea.
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15
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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16
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Huang M, Deng B, Dong F, Zhang L, Zhang Z, Chen P. Substrate Engineering for CVD Growth of Single Crystal Graphene. SMALL METHODS 2021; 5:e2001213. [PMID: 34928093 DOI: 10.1002/smtd.202001213] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Revised: 01/13/2021] [Indexed: 06/14/2023]
Abstract
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.
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Affiliation(s)
- Ming Huang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Bangwei Deng
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Fan Dong
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Lili Zhang
- Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Zheye Zhang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Peng Chen
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
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17
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Morales C, Urbanos FJ, Del Campo A, Leinen D, Granados D, Prieto P, Aballe L, Foerster M, Soriano L. Influence of chemical and electronic inhomogeneities of graphene/copper on the growth of oxide thin films: the ZnO/graphene/copper case. NANOTECHNOLOGY 2021; 32:245301. [PMID: 33508809 DOI: 10.1088/1361-6528/abe0e8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Accepted: 01/28/2021] [Indexed: 06/12/2023]
Abstract
The interaction of graphene with metal oxides is essential for understanding and controlling new devices' fabrication based on these materials. The growth of metal oxides on graphene/substrate systems constitutes a challenging task due to the graphene surface's hydrophobic nature. In general, different pre-treatments should be performed before deposition to ensure a homogenous growth depending on the deposition technique, the metal oxide, and the surface's specific nature. Among these factors, the initial state and interaction of graphene with its substrate is the most important. Therefore, it is imperative to study the initial local state of graphene and relate it to the early stages of metal oxides' growth characteristics. Taking as initial samples graphene grown by chemical vapor deposition on polycrystalline Cu sheets and then exposed to ambient conditions, this article presents a local study of the inhomogeneities of this air-exposed graphene and how they influence on the subsequent ZnO growth. Firstly, by spatially correlating Raman and x-ray photoemission spectroscopies at the micro and nanoscales, it is shown how chemical species present in air intercalate inhomogeneously between Graphene and Cu. The reason for this is precisely the polycrystalline nature of the Cu support. Moreover, these local inhomogeneities also affect the oxidation level of the uppermost layer of Cu and, consequently, the electronic coupling between graphene and the metallic substrate. In second place, through the same characterization techniques, it is shown how the initial state of graphene/Cu sheets influences the local inhomogeneities of the ZnO deposit during the early stages of growth in terms of both, stoichiometry and morphology. Finally, as a proof of concept, it is shown how altering the initial chemical state and interaction of Graphene with Cu can be used to control the properties of the ZnO deposits.
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Affiliation(s)
- Carlos Morales
- Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, Francisco Tomás y Valiente 7, E-28049 Madrid, Spain
| | | | - Adolfo Del Campo
- Instituto de Cerámica y Vidrio, ICV-CSIC, Kelsen 5, E-28049 Madrid, Spain
| | - Dietmar Leinen
- Departamento de Física Aplicada, Universidad de Málaga, Campus Teatinos, E-29071 Málaga, Spain
| | | | - Pilar Prieto
- Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, Francisco Tomás y Valiente 7, E-28049 Madrid, Spain
| | - Lucía Aballe
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, E-08290 Cerdanyola del Vallès, Spain
| | - Michael Foerster
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, E-08290 Cerdanyola del Vallès, Spain
| | - Leonardo Soriano
- Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, Francisco Tomás y Valiente 7, E-28049 Madrid, Spain
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18
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Li N, Zhang RJ, Zhen Z, Xu ZH, Mu RD, He LM. The effect of catalytic copper pretreatments on CVD graphene growth at different stages. NANOTECHNOLOGY 2021; 32:095607. [PMID: 33217746 DOI: 10.1088/1361-6528/abcc94] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The controllable synthesis of high-quality and large-area graphene by chemical vapor deposition (CVD) remains a challenge nowadays. The massive grain boundaries in graphene grown on polycrystalline Cu by CVD significantly reduce its carrier mobility, limiting its application in high-performance electronic devices. Here, we confirm that the synergetic pretreatment of Cu with electropolishing and surface oxidation is a more efficient way to further suppress the graphene nucleation density (GND) and to accelerate the growth rate of the graphene domain by CVD. With increasing the growth time, we found that the increasing amount of GND and growth rate of the graphene domain were both decreasing during the whole CVD process when the Cu surface was not oxidized. By contrast, they kept growing over time when the Cu surface was pre-oxidized, which suggested that the change trends of the effects on the GND and growth rate between the Cu surface morphology and oxygen were opposite in the CVD process. In addition, not only the domain shape, but the number of graphene domain layers were impacted as well, and a large number of irregular ellipse graphene wafers with dendritic multilayer emerged when the Cu surface was oxidized.
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Affiliation(s)
- Na Li
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
- Beijing Institute of Graphene Technology Co., Ltd, Beijing 10094, People's Republic of China
| | - Ru-Jing Zhang
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
- Beijing Institute of Graphene Technology Co., Ltd, Beijing 10094, People's Republic of China
| | - Zhen Zhen
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
- Beijing Institute of Graphene Technology Co., Ltd, Beijing 10094, People's Republic of China
| | - Zhen-Hua Xu
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
- Beijing Institute of Graphene Technology Co., Ltd, Beijing 10094, People's Republic of China
| | - Ren-De Mu
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
| | - Li-Min He
- AECC Beijing Institute of Aeronautical Materials, Beijing 10095, People's Republic of China
- Beijing Institute of Graphene Technology Co., Ltd, Beijing 10094, People's Republic of China
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19
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Min R, Wang L, Cheng Y, Hu X. Dry electrochemical polishing of copper alloy in a medium containing ion-exchange resin. RSC Adv 2021; 11:35898-35909. [PMID: 35492769 PMCID: PMC9043278 DOI: 10.1039/d1ra07219f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Accepted: 10/17/2021] [Indexed: 11/21/2022] Open
Abstract
Metal surfaces can be polished effectively and in an environmentally friendly way by virtue of the mechanical and electrochemical interaction between ion-exchange resin particles and the metal substrate. This paper studied this ‘dry’ polishing process and its property effects on 65 brass alloys. Surface morphology analysis revealed that the surface roughness can be reduced by over 71.5% from 0.764 ± 0.031 μm to 0.218 ± 0.080 μm with longer polishing time, and by over 67.1% from 0.764 ± 0.031 μm to 0.252 ± 0.02 μm with higher voltage. XPS and EDS results showed that only a small amount of oxygen species remained on the polished metal surface, while Cu and Zn were apparently present in the metallic state. The decrease in self-corrosion current indicated by the Tafel curves and the increase in the radius of the capacitive reactance circle contained in the Nyquist plots indicate that the surface corrosion resistance of the polished materials has been improved. At each collision between resin particles and material surface, a micro electrolytic cell is formed at the contact point and an anode reaction occurs. Metal ions from the reaction enter the resin and are carried away at the end of the collision.![]()
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Affiliation(s)
- Rui Min
- Hubei Provincial Key Laboratory of Green Materials of Light Industry, College of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Lishi Wang
- Hubei Provincial Key Laboratory of Green Materials of Light Industry, College of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Yihang Cheng
- Hubei Provincial Key Laboratory of Green Materials of Light Industry, College of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
| | - Xinbin Hu
- Hubei Provincial Key Laboratory of Green Materials of Light Industry, College of Materials and Chemical Engineering, Hubei University of Technology, Wuhan, 430068, China
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20
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21
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Khan AU, Zeltzer G, Speyer G, Croft ZL, Guo Y, Nagar Y, Artel V, Levi A, Stern C, Naveh D, Liu G. Mutually Reinforced Polymer-Graphene Bilayer Membranes for Energy-Efficient Acoustic Transduction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004053. [PMID: 33236792 DOI: 10.1002/adma.202004053] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2020] [Revised: 10/15/2020] [Indexed: 06/11/2023]
Abstract
Graphene holds promise for thin, ultralightweight, and high-performance nanoelectromechanical transducers. However, graphene-only devices are limited in size due to fatigue and fracture of suspended graphene membranes. Here, a lightweight, flexible, transparent, and conductive bilayer composite of polyetherimide and single-layer graphene is prepared and suspended on the centimeter scale with an unprecedentedly high aspect ratio of 105 . The coupling of the two components leads to mutual reinforcement and creates an ultrastrong membrane that supports 30 000 times its own weight. Upon electromechanical actuation, the membrane pushes a massive amount of air and generates high-quality acoustic sound. The energy efficiency is ≈10-100 times better than state-of-the-art electrodynamic speakers. The bilayer membrane's combined properties of electrical conductivity, mechanical strength, optical transparency, thermal stability, and chemical resistance will promote applications in electronics, mechanics, and optics.
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Affiliation(s)
- Assad U Khan
- Department of Chemistry, Macromolecules Innovation Institute, and Division of Nanoscience, Academy of Integrated Science, Virginia Tech, Blacksburg, VA, 24061, USA
| | | | | | - Zacary L Croft
- Department of Chemistry, Macromolecules Innovation Institute, and Division of Nanoscience, Academy of Integrated Science, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Yichen Guo
- Department of Chemistry, Macromolecules Innovation Institute, and Division of Nanoscience, Academy of Integrated Science, Virginia Tech, Blacksburg, VA, 24061, USA
| | | | - Vlada Artel
- Bar-Ilan University, Tel-Aviv, 5290002, Israel
| | - Adi Levi
- Bar-Ilan University, Tel-Aviv, 5290002, Israel
| | - Chen Stern
- Bar-Ilan University, Tel-Aviv, 5290002, Israel
| | - Doron Naveh
- Bar-Ilan University, Tel-Aviv, 5290002, Israel
| | - Guoliang Liu
- Department of Chemistry, Macromolecules Innovation Institute, and Division of Nanoscience, Academy of Integrated Science, Virginia Tech, Blacksburg, VA, 24061, USA
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22
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Ta HQ, Bachmatiuk A, Mendes RG, Perello DJ, Zhao L, Trzebicka B, Gemming T, Rotkin SV, Rümmeli MH. Large-Area Single-Crystal Graphene via Self-Organization at the Macroscale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002755. [PMID: 32965054 DOI: 10.1002/adma.202002755] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 07/11/2020] [Indexed: 06/11/2023]
Abstract
In 1665 Christiaan Huygens first noticed how two pendulums, regardless of their initial state, would synchronize. It is now known that the universe is full of complex self-organizing systems, from neural networks to correlated materials. Here, graphene flakes, nucleated over a polycrystalline graphene film, synchronize during growth so as to ultimately yield a common crystal orientation at the macroscale. Strain and diffusion gradients are argued as the probable causes for the long-range cross-talk between flakes and the formation of a single-grain graphene layer. The work demonstrates that graphene synthesis can be advanced to control the nucleated crystal shape, registry, and relative alignment between graphene crystals for large area, that is, a single-crystal bilayer, and (AB-stacked) few-layer graphene can been grown at the wafer scale.
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Affiliation(s)
- Huy Quang Ta
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Polish Center for Technology Development (PORT), Ul. Stabłowicka 147, Wrocław, 54-066, Poland
| | - Rafael Gregorio Mendes
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - David J Perello
- School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Booth St. E, Manchester, M13 9PL, UK
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Barbara Trzebicka
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
| | - Slava V Rotkin
- Department of Engineering Science and Mechanics, Materials Research Institute, The Pennsylvania State University, Millennium Science Complex, University Park, PA, 16802, USA
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, Dresden, D-01171, Germany
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze, 41-819, Poland
- Institute of Environmental Technology, VSB-Technical University of Ostrava, 17. Listopadu 15, Ostrava, 708 33, Czech Republic
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23
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Deng B, Hou Y, Liu Y, Khodkov T, Goossens S, Tang J, Wang Y, Yan R, Du Y, Koppens FHL, Wei X, Zhang Z, Liu Z, Peng H. Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties. NANO LETTERS 2020; 20:6798-6806. [PMID: 32787178 DOI: 10.1021/acs.nanolett.0c02785] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene. We demonstrated that terrace steps on vicinal Cu(111) dominate the formation of step bunches (SBs). Atomically flat graphene with roughness down to 0.2 nm was grown on flat Cu(111) films. When SB-induced ripples were avoided, as-grown ultraflat graphene maintained its flat feature after transfer. The ultraflat graphene exhibited extraordinary mechanical properties with Young's modulus ≈ 940 GPa and strength ≈ 117 GPa, comparable to mechanical exfoliated ones. Molecular dynamics simulation revealed the mechanism of softened elastic response and weakened strength of graphene with rippled structures.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yuan Hou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China
| | - Ying Liu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Tymofiy Khodkov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Stijin Goossens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Rui Yan
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Yin Du
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
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24
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Ryu B, Yoon JS, Kazyak E, Chen KH, Park Y, Dasgupta NP, Liang X. Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS 2 device arrays. NANOSCALE 2020; 12:16917-16927. [PMID: 32766658 DOI: 10.1039/d0nr04012f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Along with the increasing interest in MoS2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS2 device arrays is an imperative task to speed up the design and commercialize various functional MoS2-based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS2 structures. Second, they should be able to produce MoS2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS2 growth, and (ii) site-selective growth of MoS2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS2 features, whereas the processes using graphene ink droplets mainly produce out-of-plane MoS2 features rich in exposed edges. Using out-of-plane MoS2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.
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Affiliation(s)
- Byunghoon Ryu
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Jeong Seop Yoon
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Eric Kazyak
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Kuan-Hung Chen
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Younggeun Park
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Neil P Dasgupta
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
| | - Xiaogan Liang
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
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25
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Liu C, Wang L, Qi J, Liu K. Designed Growth of Large-Size 2D Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000046. [PMID: 32196773 DOI: 10.1002/adma.202000046] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2020] [Revised: 02/20/2020] [Accepted: 02/21/2020] [Indexed: 06/10/2023]
Abstract
In the "post-Moore's Law" era, new materials are highly expected to bring next revolutionary technologies in electronics and optoelectronics, wherein 2D materials are considered as very promising candidates beyond bulk materials due to their superiorities of atomic thickness, excellent properties, full components, and the compatibility with the processing technologies of traditional complementary metal-oxide semiconductors, enabling great potential in fabrication of logic, storage, optoelectronic, and photonic 2D devices with better performances than state-of-the-art ones. Toward the massive applications of highly integrated 2D devices, large-size 2D single crystals are a prerequisite for the ultimate quality of materials and extreme uniformity of properties. However, at present, it is still very challenging to grow all 2D single crystals into the wafer scale. Therefore, a systematic understanding for controlled growth of various 2D single crystals needs to be further established. Here, four key aspects are reviewed, i.e., nucleation control, growth promotion, surface engineering, and phase control, which are expected to be controllable at different periods during the growth. In addition, the perspectives on designed growth and potential applications are discussed for showing the bright future of these advanced material systems of 2D single crystals.
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Affiliation(s)
- Can Liu
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Li Wang
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiajie Qi
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Kaihui Liu
- State Key Lab for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
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26
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Shi Y, Wang Y, Ren Y, Wan Y. Effect of Gas Atmosphere in the Heating Stage on Limiting Nucleation of Graphene on Copper Foils by Low Pressure Chemical Vapor Deposition. CRYSTAL RESEARCH AND TECHNOLOGY 2020. [DOI: 10.1002/crat.201900181] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Yonggui Shi
- School of Materials Science and Engineering; Xi'an University of Technology; Xi'an 710048 China
| | - Yunwei Wang
- School of Biological and Chemical Engineering; Panzhihua University; Panzhihua 617000 China
| | - Yang Ren
- School of Materials Science and Engineering; Xi'an University of Technology; Xi'an 710048 China
| | - Yuhui Wan
- School of Materials Science and Engineering; Xi'an University of Technology; Xi'an 710048 China
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27
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Kim S, Bahk YM, Kim D, Yun H, Lim YR, Song W, Kim DS. Fabrication of vertical van der Waals gap array using single-and multi-layer graphene. NANOTECHNOLOGY 2020; 31:035304. [PMID: 31437819 DOI: 10.1088/1361-6528/ab3dd2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Arrays of van der Waals gaps were manufactured by synthesizing the vertically aligned graphene layer stacked between two copper (Cu) catalytic films. The Cu-graphene-Cu laminated structure was obtained by directly synthesizing graphene on a patterned Cu film followed by depositing a second copper layer for optical measurements. The synthesis of graphene on the Cu surface was optimized by adjusting the synthesis temperatures and pre-annealing time using plasma enhanced chemical vapor deposition (PECVD). Resonant Raman spectroscopy measurements reveal that graphene can be synthesized on both bulk Cu foil and relatively thin Cu film under the same growth mechanism using PECVD. Structural and optical characterizations of the array of graphene van der Waals gaps were implemented by the transmission electron microscope and terahertz-time domain spectroscopy (THz-TDS). In THz-TDS, the measured THz amplitude transmitted through the graphene van der Waals gap slit array was constant regardless of the gap width determined by the number of graphene layers between the Cu thin films in a single slit. These results imply that the optical dielectric constant of graphene at THz frequencies in the out-of-plane direction is linearly proportional to the gap width. Our results of the manufacturing method can be adopted to investigate mechanical, electrical, and optical properties of other 2D materials such as h-BN, MoS2, and others. Furthermore, metal-graphene-metal structures with vertical orientations can be used in many electronic, optic, and optoelectronic applications.
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Affiliation(s)
- Sunghwan Kim
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
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28
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Saeed M, Robson JD, Kinloch IA, Derby B, Liao CD, Al-Awadhi S, Al-Nasrallah E. The formation mechanism of hexagonal Mo 2C defects in CVD graphene grown on liquid copper. Phys Chem Chem Phys 2020; 22:2176-2180. [PMID: 31912811 DOI: 10.1039/c9cp05618a] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Thin Mo2C hexagonal defects precipitate in CVD graphene when Mo crucibles are engaged to hold the liquid copper substrate, while these defects disappear when W crucibles are present. These defects have been identified as the thin precipitates of Mo2C. The growth mechanism of the Mo2C defects is demonstrated through thermodynamic calculations. This can be beneficial in graphene defect engineering through the vapour phase transport of the volatile MoO3 phase.
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Affiliation(s)
- Maryam Saeed
- Kuwait Institute for Scientific Research, Energy and Building Research Center, Nanotechnology and Advanced Materials Program, P.O. Box 24885, Safat, 13109, Kuwait. and University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK
| | - Joseph D Robson
- University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK
| | - Ian A Kinloch
- University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK
| | - Brian Derby
- University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK
| | - Chun-Da Liao
- University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK
| | - Sami Al-Awadhi
- Kuwait Institute for Scientific Research, Energy and Building Research Center, Nanotechnology and Advanced Materials Program, P.O. Box 24885, Safat, 13109, Kuwait.
| | - Eissa Al-Nasrallah
- Kuwait Institute for Scientific Research, Energy and Building Research Center, Nanotechnology and Advanced Materials Program, P.O. Box 24885, Safat, 13109, Kuwait.
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29
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Patil R, Bahadur P, Tiwari S. Dispersed graphene materials of biomedical interest and their toxicological consequences. Adv Colloid Interface Sci 2020; 275:102051. [PMID: 31753296 DOI: 10.1016/j.cis.2019.102051] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2019] [Revised: 09/04/2019] [Accepted: 10/17/2019] [Indexed: 02/07/2023]
Abstract
Graphene is one-atom thick nanocarbon displaying a unique honeycomb structure and extensive conjugation. In addition to high surface area to mass ratio, it displays unique optical, thermal, electronic and mechanical properties. Atomic scale tunability of graphene has attracted immense research interest with a prospective utility in electronics, desalination, energy sectors, and beyond. Its intrinsic opto-thermal properties are appealing from the standpoint of multimodal drug delivery, imaging and biosensing applications. Hydrophobic basal plane of sheets can be efficiently loaded with aromatic molecules via non-specific forces. With intense biomedical interest, methods are evolving to produce defect-free and dispersion stable sheets. This review summarizes advancements in synthetic approaches and strategies of stabilizing graphene derivatives in aqueous medium. We have described the interaction of colloidal graphene with cellular and sub-cellular components, and subsequent physiological signaling. Finally, a systematic discussion is provided covering toxicological challenges and possible solutions on utilizing graphene formulations for high-end biomedical applications.
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30
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Zhang J, Lin L, Jia K, Sun L, Peng H, Liu Z. Controlled Growth of Single-Crystal Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903266. [PMID: 31583792 DOI: 10.1002/adma.201903266] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2019] [Revised: 07/23/2019] [Indexed: 06/10/2023]
Abstract
Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
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31
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Garcia AE, Wang CS, Sanderson RN, McDevitt KM, Zhang Y, Valdevit L, Mumm DR, Mohraz A, Ragan R. Scalable synthesis of gyroid-inspired freestanding three-dimensional graphene architectures. NANOSCALE ADVANCES 2019; 1:3870-3882. [PMID: 36132116 PMCID: PMC9418730 DOI: 10.1039/c9na00358d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Accepted: 09/16/2019] [Indexed: 05/26/2023]
Abstract
Three-dimensional porous architectures of graphene are desirable for energy storage, catalysis, and sensing applications. Yet it has proven challenging to devise scalable methods capable of producing co-continuous architectures and well-defined, uniform pore and ligament sizes at length scales relevant to applications. This is further complicated by processing temperatures necessary for high quality graphene. Here, bicontinuous interfacially jammed emulsion gels (bijels) are formed and processed into sacrificial porous Ni scaffolds for chemical vapor deposition to produce freestanding three-dimensional turbostratic graphene (bi-3DG) monoliths with high specific surface area. Scanning electron microscopy (SEM) images show that the bi-3DG monoliths inherit the unique microstructural characteristics of their bijel parents. Processing of the Ni templates strongly influences the resultant bi-3DG structures, enabling the formation of stacked graphene flakes or fewer-layer continuous films. Despite the multilayer nature, Raman spectra exhibit no discernable defect peak and large relative intensity for the Raman 2D mode, which is a characteristic of turbostratic graphene. Moiré patterns, observed in scanning tunneling microscopy images, further confirm the presence of turbostratic graphene. Nanoindentation of macroscopic pillars reveals a Young's modulus of 30 MPa, one of the highest recorded for sp2 carbon in a porous structure. Overall, this work highlights the utility of a scalable self-assembly method towards porous high quality graphene constructs with tunable, uniform, and co-continuous microstructure.
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Affiliation(s)
- Adrian E Garcia
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
| | - Chen Santillan Wang
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
| | - Robert N Sanderson
- Department of Physics and Astronomy, University of California Irvine CA 92697-4575 USA
| | - Kyle M McDevitt
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
| | - Yunfei Zhang
- Department of Mechanical and Aerospace Engineering, University of California Irvine CA 92697-2700 USA
| | - Lorenzo Valdevit
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
- Department of Mechanical and Aerospace Engineering, University of California Irvine CA 92697-2700 USA
| | - Daniel R Mumm
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
| | - Ali Mohraz
- Department of Chemical and Biomolecular Engineering, University of California Irvine CA 92697-2580 USA
| | - Regina Ragan
- Department of Materials Science and Engineering, University of California Irvine CA 92697-2585 USA
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32
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Lin L, Li J, Yuan Q, Li Q, Zhang J, Sun L, Rui D, Chen Z, Jia K, Wang M, Zhang Y, Rummeli MH, Kang N, Xu HQ, Ding F, Peng H, Liu Z. Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains. SCIENCE ADVANCES 2019; 5:eaaw8337. [PMID: 31448331 PMCID: PMC6688872 DOI: 10.1126/sciadv.aaw8337] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2019] [Accepted: 06/26/2019] [Indexed: 05/28/2023]
Abstract
Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm2 V-1 s-1 and a greatly reduced sheet resistance of only 130 ohms square-1. The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Jiayu Li
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P. R. China
- China Fortune Land Development Industrial Investment Co. Ltd., Beijing, P. R. China; School of Economics and Management, Tsinghua University, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Qinghong Yuan
- State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, Shanghai 200062, P. R. China
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia
| | - Qiucheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Dingran Rui
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P. R. China
| | - Zhaolong Chen
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Mingzhan Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
| | - Mark H. Rummeli
- Soochow Institute for Energy and Materials Innovations, College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
- Center of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
- Institute of Environmental Technology, VŠB–Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
| | - Ning Kang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P. R. China
| | - H. Q. Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P. R. China
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 689-798, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
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Luo D, Wang M, Li Y, Kim C, Yu KM, Kim Y, Han H, Biswal M, Huang M, Kwon Y, Goo M, Camacho-Mojica DC, Shi H, Yoo WJ, Altman MS, Shin HJ, Ruoff RS. Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1903615. [PMID: 31264306 DOI: 10.1002/adma.201903615] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Indexed: 06/09/2023]
Abstract
To date, thousands of publications have reported chemical vapor deposition growth of "single layer" graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long ≈100 nm wide "folds," separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.
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Affiliation(s)
- Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Meihui Wang
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yunqing Li
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Changsik Kim
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Ka Man Yu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yohan Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Huijun Han
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Min Goo
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Dulce C Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Haofei Shi
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Michael S Altman
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Hyung-Joon Shin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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Chaliyawala H, Rajaram N, Patel R, Ray A, Mukhopadhyay I. Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor. ACS OMEGA 2019; 4:8758-8766. [PMID: 31459965 PMCID: PMC6648834 DOI: 10.1021/acsomega.9b00051] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2019] [Accepted: 05/03/2019] [Indexed: 06/10/2023]
Abstract
Camphor-based mono-/bilayer graphene (MLG) sheets have been synthesized by very facile atmospheric chemical vapor deposition processes on Si/SiO2, soda lime glass, and flexible polyethylene terephthalate films. The effect of camphor concentration with respect to distance between camphor and the Cu foil (D) has been varied to investigate the controlled formation of a homogeneous graphene sheet over a large area on Cu foil. Raman studies show a remarkable effect of camphor at a typical distance (D) to form a monolayer to multilayer graphene (MULG) sheet. The signature of MLG to MULG sheets appears due to increase in the number of nucleation sites, even over the subsequent domains that contribute stacks of graphene over each other as observed by high-resolution transmission electron microscopy images. Moreover, the increase in camphor concentration at a particular distance generates more defect states in graphene as denoted by D band at 1360 cm-1. Uniform distribution of large-area MLG demonstrates an intense 2D/G ratio of ∼2.3. Electrical and optical measurements show a sheet resistance of ∼1 kΩ/sq with a maximum transmittance of ∼88% at 550 nm for low camphor concentration. An improvement in the rectification and photodiode behavior is observed from the diodes fabricated on n-Si/MULG as compared to n-Si/MLG in dark and light conditions.
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Affiliation(s)
- Harsh
A. Chaliyawala
- Solar
Research and Development Center, Department of Solar Energy, Pandit Deendayal Petroleum University, Raisan, Gandhinagar, 382007 Gujarat, India
| | - Narasimman Rajaram
- Material
Science and Technology Division, CSIR-National
Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, 695019 Kerela, India
| | - Roma Patel
- Solar
Research and Development Center, Department of Solar Energy, Pandit Deendayal Petroleum University, Raisan, Gandhinagar, 382007 Gujarat, India
| | - Abhijit Ray
- Solar
Research and Development Center, Department of Solar Energy, Pandit Deendayal Petroleum University, Raisan, Gandhinagar, 382007 Gujarat, India
| | - Indrajit Mukhopadhyay
- Solar
Research and Development Center, Department of Solar Energy, Pandit Deendayal Petroleum University, Raisan, Gandhinagar, 382007 Gujarat, India
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35
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Deng B, Xin Z, Xue R, Zhang S, Xu X, Gao J, Tang J, Qi Y, Wang Y, Zhao Y, Sun L, Wang H, Liu K, Rummeli MH, Weng LT, Luo Z, Tong L, Zhang X, Xie C, Liu Z, Peng H. Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays. Sci Bull (Beijing) 2019; 64:659-668. [PMID: 36659648 DOI: 10.1016/j.scib.2019.04.030] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Revised: 04/20/2019] [Accepted: 04/22/2019] [Indexed: 01/21/2023]
Abstract
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhaowei Xin
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Ruiwen Xue
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Shishu Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jing Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yan Zhao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Luzhao Sun
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huihui Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Mark H Rummeli
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China; Centre of Polymer and Carbon Materials, Polish Academy of Sciences, Zabrze 41-819, Poland
| | - Lu-Tao Weng
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Lianming Tong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xinyu Zhang
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Changsheng Xie
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
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36
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Mancini L, Morassi M, Sinito C, Brandt O, Geelhaar L, Song HG, Cho YH, Guan N, Cavanna A, Njeim J, Madouri A, Barbier C, Largeau L, Babichev A, Julien FH, Travers L, Oehler F, Gogneau N, Harmand JC, Tchernycheva M. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene. NANOTECHNOLOGY 2019; 30:214005. [PMID: 30736031 DOI: 10.1088/1361-6528/ab0570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815°C ± 5°C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 °C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).
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Affiliation(s)
- L Mancini
- Centre de Nanosciences et de Nanotechnologies (C2N) sites Orsay and Marcoussis, UMR9001 CNRS, University Paris Sud, University Paris Saclay, France
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37
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Reckinger N, Casa M, Scheerder JE, Keijers W, Paillet M, Huntzinger JR, Haye E, Felten A, Van de Vondel J, Sarno M, Henrard L, Colomer JF. Restoring self-limited growth of single-layer graphene on copper foil via backside coating. NANOSCALE 2019; 11:5094-5101. [PMID: 30839973 DOI: 10.1039/c8nr09841g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that, in principle, prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foils allows for the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free furnace. We show that the absence of FLG patches is related to the suppression of carbon diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be drastically shortened.
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Affiliation(s)
- Nicolas Reckinger
- Department of Physics, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium.
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38
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Nayak PK. Pulsed-grown graphene for flexible transparent conductors. NANOSCALE ADVANCES 2019; 1:1215-1223. [PMID: 36133212 PMCID: PMC9419159 DOI: 10.1039/c8na00181b] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2018] [Accepted: 01/01/2019] [Indexed: 06/13/2023]
Abstract
In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements. However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide. The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 Ω sq-1, high transparency (T r ∼90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.
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Affiliation(s)
- Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras Chennai 600036 India
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39
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Deng B, Liu Z, Peng H. Toward Mass Production of CVD Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1800996. [PMID: 30277604 DOI: 10.1002/adma.201800996] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Revised: 06/14/2018] [Indexed: 05/09/2023]
Abstract
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
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40
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Wu H, Bu X, Deng M, Chen G, Zhang G, Li X, Wang X, Liu W. A Gas Sensing Channel Composited with Pristine and Oxygen Plasma-Treated Graphene. SENSORS 2019; 19:s19030625. [PMID: 30717219 PMCID: PMC6387050 DOI: 10.3390/s19030625] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/14/2018] [Revised: 01/27/2019] [Accepted: 01/28/2019] [Indexed: 12/24/2022]
Abstract
Oxygen plasma treatment has been reported as an effective way of improving the response of graphene gas sensors. In this work, a gas sensor based on a composite graphene channel with a layer of pristine graphene (G) at the bottom and an oxygen plasma-treated graphene (OP-G) as a covering layer was reported. The OP-G on top provided oxygen functional groups and serves as the gas molecule grippers, while the as-grown graphene beneath serves as a fast carrier transport path. Thus, the composite channel (OP-G/G) demonstrated significantly improved response in NH3 gas sensing tests compared with the pristine G channel. Moreover, the OP-G/G channel showed faster response and recovering process than the OP-G channel. Since this kind of composite channel is fabricated from chemical vapor deposited graphene and patterned with standard photolithography, the device dimension was much smaller than a gas sensor fabricated from reduced graphene oxide and it is favorable for the integration of a large number of sensing units.
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Affiliation(s)
- Haiyang Wu
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Xiangrui Bu
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Minming Deng
- Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, China.
| | - Guangbing Chen
- Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, China.
| | - Guohe Zhang
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Xin Li
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
- Guangdong Shunde Xi'an Jiaotong University Academy, NO.3 Deshengdong Road, Daliang, Shunde District, Foshan 528300, China.
| | - Xiaoli Wang
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
- School of Science, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Weihua Liu
- School of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, School of Electronic and Information Engineering, Xi'an Jiaotong University, 28 West Xianning Road, Xi'an 710049, China.
- Research institute of Xi'an Jiaotong University (Zhejiang), Hangzhou, Zhejiang 311215, China.
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41
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Solid-diffusion-facilitated cleaning of copper foil improves the quality of CVD graphene. Sci Rep 2019; 9:257. [PMID: 30670729 PMCID: PMC6343028 DOI: 10.1038/s41598-018-36390-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2018] [Accepted: 11/09/2018] [Indexed: 11/23/2022] Open
Abstract
The quality of CVD-grown graphene is limited by the parallel nucleation of grains from surface impurities which leads to increased grain boundary densities. Currently employed cleaning methods cannot completely remove surface impurities since impurity diffusion from the bulk to the surface occurs during growth. We here introduce a new method to remove impurities not only on the surface but also from the bulk. By employing a solid cap during annealing that acts as a sink for impurities and leads to an enhancement of copper purity throughout the catalyst thickness. The high efficiency of the solid-diffusion-based transport pathway results in a drastic decrease in the surface particle concentration in a relatively short time, as evident in AFM and SIMS characterization of copper foils. Graphene grown on those substrates displays enhanced grain sizes and room-temperature, large-area carrier mobilities in excess of 5000 cm2/Vs which emphasizes the suitability of our approach for future graphene applications.
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42
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Wang B, Wang Y, Wang G, Zhang Q. Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H 2 etching of graphene domains. RSC Adv 2019; 9:5865-5869. [PMID: 35515905 PMCID: PMC9060803 DOI: 10.1039/c8ra09265f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2018] [Accepted: 01/28/2019] [Indexed: 11/26/2022] Open
Abstract
In this paper, we studied the influence of edge morphology evolution during the chemical vapor deposition cooling process on H2 etching of graphene domains. Hexagonal graphene domains were synthesized on a Cu substrate and etched with H2 at atmospheric pressure. After etching, two kinds of graphene edge morphologies were observed, which were closely associated with the cooling process. A visible curvature was observed at the graphene edges via an atomic force microscope, indicating that the graphene edges sank into the Cu surface during the cooling process, which protected the graphene edges from etching. This work demonstrates the changes in graphene edges during cooling and sheds light on the etching mechanism of graphene edges on a Cu substrate. The entire morphological variation of CVD graphene during cooling and etching.![]()
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Affiliation(s)
- Bin Wang
- College of New Energy
- Bohai University
- Jinzhou City
- China
| | - Yuwei Wang
- Department of Chemistry and Environmental Sciences
- Jinzhou City
- China
| | - Guiqiang Wang
- College of New Energy
- Bohai University
- Jinzhou City
- China
| | - Qingguo Zhang
- College of New Energy
- Bohai University
- Jinzhou City
- China
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43
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Huet B, Raskin JP. Role of the Cu substrate in the growth of ultra-flat crack-free highly-crystalline single-layer graphene. NANOSCALE 2018; 10:21898-21909. [PMID: 30431636 DOI: 10.1039/c8nr06817h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Producing ultra-flat crack-free single-layer high-quality graphene over large areas has remained the key challenge to fully exploit graphene's potential into next-generation technological applications. In this regard, we show that epitaxial Cu(111) film represents the most promising catalyst for the chemical vapor deposition (CVD) of graphene with superior planarity and physical integrity. We first compare the most widely used Cu catalysts (foils, polycrystalline films and epitaxial films) in order to benchmark the roughness of the Cu surface which serves as a template for graphene growth. We then discuss the correlation between the formation of cracks and wrinkles in as-grown graphene and the surface morphology of these various Cu catalysts. In particular, Cu grain boundary grooves, inherently present in polycrystalline substrates, are found to contribute to the formation of cracks. Finally, we focused on tuning the CVD protocol in order to successfully grow highly crystalline graphene made of millimeter-size domains on every type of catalyst while mitigating Cu surface roughening. Putting into context the challenges and opportunities associated with the most widely used Cu catalysts provides valuable guidelines for high-throughput manufacturing of graphene suitable for emerging industrial applications.
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44
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Norahan MH, Amroon M, Ghahremanzadeh R, Mahmoodi M, Baheiraei N. Electroactive graphene oxide-incorporated collagen assisting vascularization for cardiac tissue engineering. J Biomed Mater Res A 2018; 107:204-219. [DOI: 10.1002/jbm.a.36555] [Citation(s) in RCA: 59] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2018] [Revised: 08/18/2018] [Accepted: 09/18/2018] [Indexed: 01/21/2023]
Affiliation(s)
- Mohammad Hadi Norahan
- Department of Biomedical Engineering, Yazd Branch; Islamic Azad University; Yazd Iran
| | - Masoud Amroon
- Department of Biomedical Engineering, Yazd Branch; Islamic Azad University; Yazd Iran
| | - Ramin Ghahremanzadeh
- Nanobiotechnology Research Center; Avicenna Research Institute, ACECR; Tehran Iran
| | - Mahboobeh Mahmoodi
- Department of Biomedical Engineering, Yazd Branch; Islamic Azad University; Yazd Iran
| | - Nafiseh Baheiraei
- Tissue Engineering and Applied Cell Sciences Division; Department of Hematology, Faculty of Medical Sciences, Tarbiat Modares University; Tehran Iran
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45
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Zhan L, Wang Y, Chang H, Stehle R, Xu J, Gao L, Zhang W, Jia Y, Qing F, Li X. Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis. NANOSCALE RESEARCH LETTERS 2018; 13:340. [PMID: 30361958 PMCID: PMC6202303 DOI: 10.1186/s11671-018-2740-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Accepted: 10/01/2018] [Indexed: 06/08/2023]
Abstract
As grown graphene by chemical vapor deposition typically degrades greatly due to the presence of grain boundaries, which limit graphene's excellent properties and integration into advanced applications. It has been demonstrated that there is a strong correlation between substrate morphology and graphene domain density. Here, we investigate how thermal annealing and electro-polishing affects the morphology of Cu foils. Ultra-smooth Cu surfaces can be achieved and maintained at elevated temperatures by electro-polishing after a pre-annealing treatment. This technique has shown to be more effective than just electro-polishing the Cu substrate without pre-annealing. This may be due to the remaining dislocations and point defects within the Cu bulk material moving to the surface when the Cu is heated. Likewise, a pre-annealing step may release them. Graphene grown on annealed electro-polished Cu substrates show a better quality in terms of lower domain density and higher layer uniformity than those grown on Cu substrates with only annealing or only electro-polishing treatment.
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Affiliation(s)
- Longlong Zhan
- State Key Laboratory of Electronic Thin Films and Integrated Devices & School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Yue Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices & School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Huicong Chang
- Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, 100094 People’s Republic of China
| | - Richard Stehle
- Mechanical Engineering Department, Sichuan University-Pittsburgh Institute, Sichuan University Jiang’an Campus, Chengdu, 610207 People’s Republic of China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Wanli Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices & School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Yi Jia
- Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, 100094 People’s Republic of China
| | - Fangzhu Qing
- State Key Laboratory of Electronic Thin Films and Integrated Devices & School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
| | - Xuesong Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices & School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 People’s Republic of China
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Jin S, Huang M, Kwon Y, Zhang L, Li BW, Oh S, Dong J, Luo D, Biswal M, Cunning BV, Bakharev PV, Moon I, Yoo WJ, Camacho-Mojica DC, Kim YJ, Lee SH, Wang B, Seong WK, Saxena M, Ding F, Shin HJ, Ruoff RS. Colossal grain growth yields single-crystal metal foils by contact-free annealing. Science 2018; 362:1021-1025. [DOI: 10.1126/science.aao3373] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2017] [Revised: 08/24/2018] [Accepted: 10/08/2018] [Indexed: 01/20/2023]
Abstract
Single-crystal metals have distinctive properties owing to the absence of grain boundaries and strong anisotropy. Commercial single-crystal metals are usually synthesized by bulk crystal growth or by deposition of thin films onto substrates, and they are expensive and small. We prepared extremely large single-crystal metal foils by “contact-free annealing” from commercial polycrystalline foils. The colossal grain growth (up to 32 square centimeters) is achieved by minimizing contact stresses, resulting in a preferred in-plane and out-of-plane crystal orientation, and is driven by surface energy minimization during the rotation of the crystal lattice followed by “consumption” of neighboring grains. Industrial-scale production of single-crystal metal foils is possible as a result of this discovery.
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Affiliation(s)
- Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Bao-Wen Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Sangjun Oh
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jichen Dong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Benjamin V. Cunning
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Pavel V. Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Inyong Moon
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Dulce C. Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Yong-Jin Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Won Kyung Seong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Manav Saxena
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyung-Joon Shin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Rodney S. Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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Macedo LJA, Iost RM, Hassan A, Balasubramanian K, Crespilho FN. Bioelectronics and Interfaces Using Monolayer Graphene. ChemElectroChem 2018. [DOI: 10.1002/celc.201800934] [Citation(s) in RCA: 38] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Affiliation(s)
- Lucyano J. A. Macedo
- São Carlos Institute of Chemistry; University of São Paulo; São Carlos SP 13560-970 Brazil
| | - Rodrigo M. Iost
- Department of Chemistry School of Analytical Sciences Adlershof (SALSA) and IRIS Adlershof; Humboldt-Universität zu Berlin; Berlin 10099 Germany
| | - Ayaz Hassan
- São Carlos Institute of Chemistry; University of São Paulo; São Carlos SP 13560-970 Brazil
| | - Kannan Balasubramanian
- Department of Chemistry School of Analytical Sciences Adlershof (SALSA) and IRIS Adlershof; Humboldt-Universität zu Berlin; Berlin 10099 Germany
| | - Frank N. Crespilho
- São Carlos Institute of Chemistry; University of São Paulo; São Carlos SP 13560-970 Brazil
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Li M, Zhou S, Wang R, Yu Y, Wong H, Luo Z, Li H, Gan L, Zhai T. In situ formed nanoparticle-assisted growth of large-size single crystalline h-BN on copper. NANOSCALE 2018; 10:17865-17872. [PMID: 30221281 DOI: 10.1039/c8nr05722b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
h-BN is a widely used ultrathin insulator that can be synthesized in a controllable manner by chemical vapor deposition, similar to the growth of graphene. However, it is challenging to grow large-size single crystalline h-BN because of the ambiguous understanding of its growth mechanism. In this study, we propose a novel in situ formed nanoparticle-assisted growth strategy for large-size single crystalline h-BN growth on conventional polycrystalline copper. We found that the areal nucleation density of h-BN can be suppressed from ∼105 nuclei per mm2 to ∼102 nuclei per mm2 by the in situ formed nanoparticles that were introduced by pre-oxidation. Thus, single crystalline h-BN with lateral length of up to ∼102 μm was readily synthesized. Furthermore, for first time we discovered that the areal nucleation density of h-BN initially decreases and then increases under extreme annealing conditions, indicating that there is a competition-induced limit for suppressing the nucleation of h-BN on copper. This mechanism is universal for h-BN and graphene synthesis, which probably paves the way for large-size graphene/h-BN heterostructures synthesis in the future.
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Affiliation(s)
- Man Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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49
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Lin L, Deng B, Sun J, Peng H, Liu Z. Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene. Chem Rev 2018; 118:9281-9343. [PMID: 30207458 DOI: 10.1021/acs.chemrev.8b00325] [Citation(s) in RCA: 97] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jingyu Sun
- Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.,Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
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50
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Yi D, Luo D, Wang ZJ, Dong J, Zhang X, Willinger MG, Ruoff RS, Ding F. What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition? PHYSICAL REVIEW LETTERS 2018; 120:246101. [PMID: 29956979 DOI: 10.1103/physrevlett.120.246101] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2018] [Indexed: 06/08/2023]
Abstract
Compressive strain relaxation of a chemical vapor deposition (CVD) grown graphene overlayer has been considered to be the main driving force behind metal surface step bunching (SB) in CVD graphene growth. Here, by combining theoretical studies with experimental observations, we prove that the SB can occur even in the absence of a compressive strain, is enabled by the rapid diffusion of metal adatoms beneath the graphene and is driven by the release of the bending energy of the graphene overlayer in the vicinity of steps. Based on this new understanding, we explain a number of experimental observations such as the temperature dependence of SB, and how SB depends on the thickness of the graphene film. This study also shows that SB is a general phenomenon that can occur in all substrates covered by films of two-dimensional (2D) materials.
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Affiliation(s)
- Ding Yi
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Zhu-Jun Wang
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Jichen Dong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Xu Zhang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Marc-Georg Willinger
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem D-14195, Germany
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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