Silicon-nanowire-based CMOS-compatible field-effect transistor nanosensors for ultrasensitive electrical detection of nucleic acids

Au Nanoparticles@Si Nanowire Oligomer Arrays for SERS: Dimers Are Best

We report the synthesis of vertically aligned silicon nanowire (VA-SiNW) oligomer arrays coated with Au nanoparticle (NP) monolayers via a combination of colloidal lithography, metal-assisted chemical etching, and directed NP assembly. Arrays of SiNW monomers (i.e., isolated NWs), dimers, and tetramers are synthesized, decorated with AuNPs, and tested for their performance in surface-enhanced Raman spectroscopy. The ∼20 nm AuNPs easily enter within the ca. 40 nm gaps of the SiNW oligomers, thus reaching the hot spot region. At 785 nm excitation, the AuNPs@SiNW dimer arrays provide the highest Raman signal, in agreement with electromagnetic simulations showing a high electric field enhancement at the Au/Si interface within the dimer gap region.

Recent progress on field-effect transistor-based biosensors: device perspective

Over the last few decades, field-effect transistor (FET)-based biosensors have demonstrated great potential across various industries, including medical, food, agriculture, environmental, and military sectors. These biosensors leverage the electrical properties of transistors to detect a wide range of biomolecules, such as proteins, DNA, and antibodies. This article presents a comprehensive review of advancements in the architectures of FET-based biosensors aiming to enhance device performance in terms of sensitivity, detection time, and selectivity. The review encompasses an overview of emerging FET-based biosensors and useful guidelines to reach the best device dimensions, favorable design, and realization of FET-based biosensors. Consequently, it furnishes researchers with a detailed perspective on design considerations and applications for future generations of FET-based biosensors. Finally, this article proposes intriguing avenues for further research on the topology of FET-based biosensors.

Advances in nanotechnological approaches for the detection of early markers associated with severe cardiac ailments

Mortality from cardiovascular disease (CVD) accounts for over 30% of all deaths globally, necessitating reliable diagnostic tools. Prompt identification and precise diagnosis are critical for effective personalized treatment. Nanotechnology offers promising applications in diagnostics, biosensing and drug delivery for prevalent cardiovascular diseases. Its integration into cardiovascular care enhances diagnostic accuracy, enabling early intervention and tailored treatment plans. By leveraging nanoscale innovations, healthcare professionals can address the complexities of CVD progression and customize interventions based on individual patient needs. Ongoing advancements in nanotechnology continue to shape the landscape of cardiovascular medicine, offering potential for improved patient outcomes and reduced mortality rates from these pervasive diseases.

Influence of Surface Treatments on Urea Detection Using Si Electrolyte-Gated Transistors with Different Gate Electrodes

We investigated the impact of surface treatments on Si-based electrolyte-gated transistors (EGTs) for detecting urea. Three types of EGTs were fabricated with distinct gate electrodes (Ag, Au, Pt) using a top-down method. These EGTs exhibited exceptional intrinsic electrical properties, including a low subthreshold swing of 80 mV/dec, a high on/off current ratio of 106, and negligible hysteresis. Three surface treatment methods ((3-amino-propyl) triethoxysilane (APTES) and glutaraldehyde (GA), 11-mercaptoundecanoic acid (11-MUA), 3-mercaptopropionic acid (3-MPA)) were individually applied to the EGTs with different gate electrodes (Ag, Au, Pt). Gold nanoparticle binding tests were performed to validate the surface functionalization. We compared their detection performance of urea and found that APTES and GA exhibited the most superior detection characteristics, followed by 11-MUA and 3-MPA, regardless of the gate metal. APTES and GA, with the highest pKa among the three surface treatment methods, did not compromise the activity of urease, making it the most suitable surface treatment method for urea sensing.

A comprehensive review on the biomedical frontiers of nanowire applications

This comprehensive review examines the immense capacity of nanowires, nanostructures characterized by unbounded dimensions, to profoundly transform the field of biomedicine. Nanowires, which are created by combining several materials using techniques such as electrospinning and vapor deposition, possess distinct mechanical, optical, and electrical properties. As a result, they are well-suited for use in nanoscale electronic devices, drug delivery systems, chemical sensors, and other applications. The utilization of techniques such as the vapor-liquid-solid (VLS) approach and template-assisted approaches enables the achievement of precision in synthesis. This precision allows for the customization of characteristics, which in turn enables the capability of intracellular sensing and accurate drug administration. Nanowires exhibit potential in biomedical imaging, neural interfacing, and tissue engineering, despite obstacles related to biocompatibility and scalable manufacturing. They possess multifunctional capabilities that have the potential to greatly influence the intersection of nanotechnology and healthcare. Surmounting present obstacles has the potential to unleash the complete capabilities of nanowires, leading to significant improvements in diagnostics, biosensing, regenerative medicine, and next-generation point-of-care medicines.

Silicon nanowire FET biosensor and its application in acute myocardial infarction

Over the last two decades, silicon nanowire field-effect transistors (SiNW-FETs) with prominent merits of high surface-to-volume ratio, excellent biocompatibility and mature fabrication with standard silicon technology, have been widely studied as ultrahigh sensitive biosensors for the detection of target biomolecules, such as proteins, nucleic acids, cells and viruses so on. Herein we present a comprehensive review of the fundamental aspects of SiNW-FET biosensors, involving the working principle and the device fabrication, surface functionalization, and system integration with fluid exchange and electrical detection. Futhermore, we emphatically discuss the electrical detection of cardiac-specific biomarkers related to acute myocardial infarction disease. SiNW-FET biosensors are being increasingly exploited as promising diagnostic devices, which provide high sensitivity, high integration density, high speed sampling, strong specificity, and real-time and label-free detection for simple and cheap clinical testing.

Advances in Detection Techniques for the H5N1 Avian Influenza Virus

Avian influenza is caused by avian influenza virus infection; the H5N1 avian influenza virus is a highly pathogenic subtype, affecting poultry and human health. Since the discovery of the highly pathogenic subtype of the H5N1 avian influenza virus, it has caused enormous losses to the poultry farming industry. It was recently found that the H5N1 avian influenza virus tends to spread among mammals. Therefore, early rapid detection methods are highly significant for effectively preventing the spread of H5N1. This paper discusses the detection technologies used in the detection of the H5N1 avian influenza virus, including serological detection technology, immunological detection technology, molecular biology detection technology, genetic detection technology, and biosensors. Comparisons of these detection technologies were analyzed, aiming to provide some recommendations for the detection of the H5N1 avian influenza virus.

Advances in field-effect biosensors towards point-of-use

The future of medical diagnostics calls for portable biosensors at the point of care, aiming to improve healthcare by reducing costs, improving access, and increasing quality-what is called the 'triple aim'. Developing point-of-care sensors that provide high sensitivity, detect multiple analytes, and provide real time measurements can expand access to medical diagnostics for all. Field-effect transistor (FET)-based biosensors have several advantages, including ultrahigh sensitivity, label-free and amplification-free detection, reduced cost and complexity, portability, and large-scale multiplexing. They can also be integrated into wearable or implantable devices and provide continuous, real-time monitoring of analytesin vivo, enabling early detection of biomarkers for disease diagnosis and management. This review analyzes advances in the sensitivity, parallelization, and reusability of FET biosensors, benchmarks the limit of detection of the state of the art, and discusses the challenges and opportunities of FET biosensors for future healthcare applications.

Geometrical Characterisation of TiO2-rGO Field-Effect Transistor as a Platform for Biosensing Applications

The performance of the graphene-based field-effect transistor (FET) as a biosensor is based on the output drain current (Id). In this work, the signal-to-noise ratio (SNR) was investigated to obtain a high-performance device that produces a higher Id value. Using the finite element method, a novel top-gate FET was developed in a three-dimensional (3D) simulation model with the titanium dioxide-reduced graphene oxide (TiO2-rGO) nanocomposite as the transducer material, which acts as a platform for biosensing application. Using the Taguchi mixed-level method in Minitab software (Version 16.1.1), eighteen 3D models were designed based on an orthogonal array L18 (6134), with five factors, and three and six levels. The parameters considered were the channel length, electrode length, electrode width, electrode thickness and electrode type. The device was fabricated using the conventional photolithography patterning technique and the metal lift-off method. The material was synthesised using the modified sol-gel method and spin-coated on top of the device. According to the results of the ANOVA, the channel length contributed the most, with 63.11%, indicating that it was the most significant factor in producing a higher Id value. The optimum condition for the highest Id value was at a channel length of 3 µm and an electrode size of 3 µm × 20 µm, with a thickness of 50 nm for the Ag electrode. The electrical measurement in both the simulation and experiment under optimal conditions showed a similar trend, and the difference between the curves was calculated to be 28.7%. Raman analyses were performed to validate the quality of TiO2-rGO.

Controlling amorphous silicon in scratching for fabricating high-performance micromixers

As core parts of microfluidic chip analysis systems, micromixers show robust applications in wide fields. However, restricted by the fabrication technology, it remains challenging to achieve high-quality micromixers with both delicately designed structure and efficient mixing. In this study, based on the theory of chaotic mixing, sinusoidal structures with variable phases were designed and then fabricated through scanning probe lithography (SPL) and post-selective etching. It was found that scratches with phase differences can lead to the periodic formation of amorphous silicon (a-Si), which can resist etching. Consequentially, misaligned sine channels with thick-thin alternating 3D shapes can be generated in situ from the scratched traces after the etching. Further analysis showed that a thicker a-Si layer can be obtained by reducing the line spacing in the scratching, confirmed by Raman detections and simulations. With the proposed method, the misaligned sine micromixer was achieved with higher mixing efficiency than ever. The duplicating process was also investigated for high-precision production of micromixers. The study provided strategies for the miniaturization of high-performance microfluidic chips.

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.

Electrical Nanobiosensors for Nucleic Acid Based Diagnostics

Recent advances in nanotechnologies have promoted the iterative updating of nucleic acid sensors. Among various sensing technologies, the electrical nanobiosensor is regarded as one of the most promising prospects to achieve rapid, precise, and point-of-care nucleic acid based diagnostics. In this Perspective, we introduce recent progresses in electrical nanobiosensors for nucleic acid detection. First, the strategies for improving detection performance are summarized, including chemical amplification and electrical amplification. Then, the detection mechanism of electrical nanobiosensors, such as electrochemical biosensors, field-effect transistors, and photoelectric enhanced biosensors, is illustrated. At the same time, their applications in cancer screening, pathogen detection, gene sequencing, and genetic disease diagnosis are introduced. Finally, challenges and future prospects in clinical application are discussed.

Designable microfluidic ladder networks from backstepping microflow analysis for mass production of monodisperse microdroplets

Controllable mass production of monodisperse droplets plays a key role in numerous fields ranging from scientific research to industrial application. Microfluidic ladder networks show great potential in mass production of monodisperse droplets, but their design with uniform microflow distribution remains challenging due to the lack of a rational design strategy. Here an effective design strategy based on backstepping microflow analysis (BMA) is proposed for the rational development of microfluidic ladder networks for mass production of controllable monodisperse microdroplets. The performance of our BMA rule for rational microfluidic ladder network design is demonstrated by using an existing analogism-derived rule that is widely used for the design of microfluidic ladder networks as the control group. The microfluidic ladder network designed by the BMA rule shows a more uniform flow distribution in each branch microchannel than that designed by the existing rule, as confirmed by single-phase flow simulation. Meanwhile, the microfluidic ladder network designed by the BMA rule allows mass production of droplets with higher size monodispersity in a wider window of flow rates and mass production of polymeric microspheres from such highly monodisperse droplet templates. The proposed BMA rule provides new insights into the microflow distribution behaviors in microfluidic ladder networks based on backstepping microflow analysis and provides a rational guideline for the efficient development of microfluidic ladder networks with uniform flow distribution for mass production of highly monodisperse droplets. Moreover, the BMA method provides a general analysis strategy for microfluidic networks with parallel multiple microchannels for rational scale-up.

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices

With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.

Luminescence Nanomaterials for Biosensing Applications

Due to their capabilities of immobilizing more bioreceptor parts with reduced volumes, nanomaterials have emerged as potential tools for increasing sensitivity to specific molecules. Furthermore, carbon nanotube, gold nanoparticles, polymer nanoparticles, semiconductor quantum dots, graphene, nano-diamonds and graphene are among the nanomaterials that are under investigation. Due to the fast development of such a field of research, review summarises the classification of biosensors using main receptors, and designing biosensors. Numerous studies have concentrated on the manipulation of Persistent luminescence nanoparticles (PLNPs) in biosensing, cell tracking, bioimaging, and cancer therapy due to the effective removal of the autofluorescence interferences from tissues and the ultra-long near-infrared afterglow emission. As luminescence has a unique optical property, it can be detected without constant external illumination, preventing autofluorescence and light dispersion through tissues. These successes sparked an increasing curiosity in creating novel PLNP kinds with desired superior properties and multiple purposes. In this review, we emphasize the most recent developments in biosensing, imaging, and image-guided therapy while summarizing the research on synthesis methods, bio applications, bio membrane modification and bio-safety of PLNPs. Finally, the remaining issues and difficulties are examined together with prospective future developments in the field of biomedical applications.

Metal-Nanoparticle-Supported Nanozyme-Based Colorimetric Sensor Array for Precise Identification of Proteins and Oral Bacteria

Convenient, precise, and high-throughput discrimination of multiple bioanalytes is of great significance for an early diagnosis of diseases. Array-based pattern recognition has proven to be a powerful tool to detect diverse analytes, but developing sensing elements featuring favorable surface diversity still remains a challenge. In this work, we presented a simple and facile method to prepare programmable metal-nanoparticle (NP)-supported nanozymes (MNNs) as artificial receptors for the accurate identification of multiple proteins and oral bacteria. The in situ reduction of metal NPs on hierarchical MoS₂ on polypyrrole (PPy), which generated differential nonspecific interactions with bioanalytes, was envisaged as the encoder to break through the limited supply of the receptor's quantity. As a proof of concept, three metal NPs, i.e., Au, Ag, and Pd NPs, were taken as examples to deposit on PPy@MoS₂ as colorimetric probes to construct a cross-reactive sensor array. Based on the principal component analysis (PCA), the proposed MNN sensor array could well discriminate 11 proteins with unique fingerprint-like patterns at a concentration of 250 nM and was sufficiently sensitive to determine individual proteins with a detection limit down to the nanomolar level. Remarkably, two highly similar hemoglobins from different species (hemoglobin and bovine hemoglobin) have been precisely identified. Additionally, five oral bacteria were also well separated from each other without cross-classification at the level of 10⁷ CFU mL^-1. Furthermore, the sensor array allowed effective discrimination of complex protein mixtures either at different molar ratios or with minor varying components. Most importantly, the blind samples, proteins in human serums, proteins in simulated body fluid environment, the heat-denatured proteins, and even clinical cancer samples all could be well distinguished by the sensor array, demonstrating the real-world applications in clinical diagnosis.

Rapid and Sensitive Detection of Mycobacterium tuberculosis by an Enhanced Nanobiosensor

Tuberculosis (TB) mostly spreads from person to person through Mycobacterium tuberculosis (MTB). However, the majority of conventional detection methods for MTB cannot satisfy the requirements for actual TB detection. As one of the most promising powerful platforms, a silicon nanowire field-effect transistor (SiNW-FET) biosensor shows good prospect in TB detection. In this study, an enhanced SiNW-FET biosensor was developed for the rapid and sensitive detection of MTB. The surface functional parameters of the biosensor were explored and optimized. The SiNW-FET biosensor has good sensitivity with a detection limit of 0.01 fg/mL toward protein. The current change value shows a linear upward trend with the increase in protein concentration in the range of 1 fg/mL to 100 μg/mL. One whole test cycle can be accomplished within only 30 s. More importantly, a good distinction was realized in the sputum without pretreatment between normal people and TB patients, which greatly shortened the TB detection time (only 2-5 min, considering the dilution of sputum). Compared with other methods, the SiNW-FET biosensor can detect MTB with a remarkably broad dynamic linear range in a shorter time.

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. "Bottom-up" or "top-down" approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The "bottom-up" approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.

An ISFET Microarray Sensor System for Detecting the DNA Base Pairing

Deoxyribonucleic acid (DNA) sequencing technology provides important data for the disclosure of genetic information and plays an important role in gene diagnosis and gene therapy. Conventional sequencing devices are expensive and require large and bulky optical structures and additional fluorescent labeling steps. Sequencing equipment based on a semiconductor chip has the advantages of fast sequencing speed, low cost and small size. The detection of DNA base pairing is the most important step in gene sequencing. In this study, a large-scale ion-sensitive field-effect transistor (ISFET) array chip with more than 13 million sensitive units is successfully designed for detecting the DNA base pairing. DNA base pairing is successfully detected by the sensor system, which includes the ISFET microarray chip, microfluidic system, and test platform. The chip achieves a high resolution of at least 0.5 mV, thus enabling the recognition of the change of 0.01 pH value. This complementary metal-oxide semiconductor (CMOS) compatible and cost-efficient sensor array chip, together with other specially designed components, can form a complete DNA sequencing system with potential application in the molecular biology fields.

Nanowire-Enabled Bioelectronics

Bioelectronics explores the use of electronic devices for applications in signal transduction at their interfaces with biological systems. The miniaturization of the bioelectronic systems has enabled seamless integration at these interfaces and is providing new scientific and technological opportunities. In particular, nanowire-based devices can yield smaller sized and unique geometry detectors that are difficult to access with standard techniques, and thereby can provide advantages in sensitivity with reduced invasiveness. In this review, we focus on nanowire-enabled bioelectronics. First, we provide an overview of synthetic studies for designed growth of semiconductor nanowires of which structure and composition are controlled to enable key elements for bioelectronic devices. Second, we review nanowire field-effect transistor sensors for highly sensitive detection of biomolecules, their applications in diagnosis and drug discovery, and methods for sensitivity enhancement. We then turn to recent progress in nanowire-enabled studies of electrogenic cells, including cardiomyocytes and neurons. Representative advances in electrical recording using nanowire electronic devices for single cell measurements, cell network mapping, and three-dimensional recordings of synthetic and natural tissues, and in vivo brain mapping are highlighted. Finally, we overview the key challenges and opportunities of nanowires for fundamental research and translational applications.

Ab Initio Design, Shaping, and Assembly of Free-Standing Silicon Nanoprobes

Free-standing silicon nanoprobes (SiNPs) are critical tools for intracellular bioelectrical signal recording, while a scalable fabrication of these tiny SiNPs with ab initio geometry designs has not been possible. In this work, we demonstrate a novel growth shaping of slim Si nanowires (SiNWs) into SiNPs with sharp tips (curvature radii <300 nm), tunable angles of 30°, 60°, to 120° and even programmable triangle/circular shapes. A precise growth integration of orderly single, double, and quadruple SiNPs at prescribed locations enables convenient electrode connection, transferring and mounting these tiny tips onto movable arms to serve as long-protruding (over 4-20 μm) nanoprobes. Mechanical flexibility, resilience, and field-effect sensing functionality of the SiNPs were systematically testified in liquid nanodroplet and cell environments. This highly reliable and economic manufacturing of advanced SiNPs holds a strong potential to boost and open up the market implementations of a wide range of intracellular sensing, monitoring, and editing applications.

A Portable Microfluidic System for Point-of-Care Detection of Multiple Protein Biomarkers

Protein biomarkers are indicators of many diseases and are commonly used for disease diagnosis and prognosis prediction in the clinic. The urgent need for point-of-care (POC) detection of protein biomarkers has promoted the development of automated and fully sealed immunoassay platforms. In this study, a portable microfluidic system was established for the POC detection of multiple protein biomarkers by combining a protein microarray for a multiplex immunoassay and a microfluidic cassette for reagent storage and liquid manipulation. The entire procedure for the immunoassay was automatically conducted, which included the antibody–antigen reaction, washing and detection. Alpha-fetoprotein (AFP), carcinoembryonic antigen (CEA) and carcinoma antigen 125 (CA125) were simultaneously detected in this system within 40 min with limits of detection of 0.303 ng/mL, 1.870 ng/mL, and 18.617 U/mL, respectively. Five clinical samples were collected and tested, and the results show good correlations compared to those measured by the commercial instrument in the hospital. The immunoassay cassette system can function as a versatile platform for the rapid and sensitive multiplexed detection of biomarkers; therefore, it has great potential for POC diagnostics.

MXene-Graphene Field-Effect Transistor Sensing of Influenza Virus and SARS-CoV-2

An MXene-graphene field-effect transistor (FET) sensor for both influenza virus and 2019-nCoV sensing was developed and characterized. The developed sensor combines the high chemical sensitivity of MXene and the continuity of large-area high-quality graphene to form an ultra-sensitive virus-sensing transduction material (VSTM). Through polymer linking, we are able to utilize antibody-antigen binding to achieve electrochemical signal transduction when viruses are deposited onto the VSTM surface. The MXene-graphene VSTM was integrated into a microfluidic channel that can directly receive viruses in solution. The developed sensor was tested with various concentrations of antigens from two viruses: inactivated influenza A (H1N1) HA virus ranging from 125 to 250,000 copies/mL and a recombinant 2019-nCoV spike protein ranging from 1 fg/mL to 10 pg/mL. The average response time was about ∼50 ms, which is significantly faster than the existing real-time reverse transcription-polymerase chain reaction method (>3 h). The low limit of detection (125 copies/mL for the influenza virus and 1 fg/mL for the recombinant 2019-nCoV spike protein) has demonstrated the sensitivity of the MXene-graphene VSTM on the FET platform to virus sensing. Especially, the high signal-to-viral load ratio (∼10% change in source-drain current and gate voltage) also demonstrates the ultra-sensitivity of the developed MXene-graphene FET sensor. In addition, the specificity of the sensor was also demonstrated by depositing the inactivated influenza A (H1N1) HA virus and the recombinant 2019-nCoV spike protein onto microfluidic channels with opposite antibodies, producing signal differences that are about 10 times lower. Thus, we have successfully fabricated a relatively low-cost, ultrasensitive, fast-responding, and specific inactivated influenza A (H1N1) and 2019-nCoV sensor with the MXene-graphene VSTM.

Optimizing interferences of DUV lithography on SOI substrates for the rapid fabrication of sub-wavelength features

Scalable fabrication of Si nanowires with a critical dimension of about 100 nm is essential to a variety of applications. Current techniques used to reach these dimensions often involve e-beam lithography or deep-UV (DUV) lithography combined with resolution enhancement techniques. In this study, we report the fabrication of <150 nm Si nanowires from SOI substrates using DUV lithography (λ = 248 nm) by adjusting the exposure dose. Irregular resist profiles generated by in-plane interference under masking patterns of width 800 nm were optimized to split the resulting features into twin Si nanowires. However, masking patterns of micrometre size or more on the same photomask does not generate split features. The resulting resist profiles are verified by optical lithography computer simulation based on Huygens-Fresnel diffraction theory. Photolithography simulation results validate that the key factors in the fabrication of subwavelength nanostructures are the air gap value and the photoresist thickness. This enables the parallel top-down fabrication of Si nanowires and nanoribbons in a single DUV lithography step as a rapid and inexpensive alternative to conventional e-beam techniques.

A supersensitive silicon nanowire array biosensor for quantitating tumor marker ctDNA

Cancer has become one of the major diseases threatening human health and life. Circulating tumor DNA (ctDNA) testing, as a practical liquid biopsy technique, is a promising method for cancer diagnosis, targeted therapy and prognosis. Here, for the first time, a field effect transistor (FET) biosensor based on uniformly sized high-response silicon nanowire (SiNW) array was studied for real-time, label-free, super-sensitive detection of PIK3CA E542K ctDNA. High-response 120-SiNWs array was fabricated on a (111) silicon-on-insulator (SOI) by the complementary metal oxide semiconductor (CMOS)-compatible microfabrication technology. To detecting ctDNA, we modified the DNA probe on the SiNWs array through silanization. The experimental results demonstrated that the as-fabricated biosensor had significant superiority in ctDNA detection, which achieved ultralow detection limit of 10 aM and had a good linearity under the ctDNA concentration range from 0.1 fM to 100 pM. This biosensor can recognize complementary target ctDNA from one/two/full-base mismatched DNA with high selectivity. Furthermore, the fabricated SiNW-array FET biosensor successfully detected target ctDNA in human serum samples, indicating a good potential in clinical applications in the future.

The trends in nanomaterial-based biosensors for detecting critical biomarkers in stroke

Acute ischemic stroke (AIS), is the second global cause of death after cardiovascular diseases, accounts for 80-85% of cerebrovascular disease. Stroke diagnosis could be challenging in the acute phase. Detection of biomarkers for evaluating the prognosis of diseases is essential for improving personalized treatment and decreasing mortality. At the present time, the absence of a broadly existing and rapid diagnostic test is an important limitation in the evaluation and treatment of diseases. The use of a biomarker-based diagnostic attitude has confirmed very valuable in acute coronary syndromes, which has been promoted in acute stroke to help early management decisions. Over the past decade, different detection procedures have developed for the assessment of human cardiac troponins (cTnI). This review emphasizes on summarizing optical, and electrochemical biosensors for the detection of cTnI, brain natriuretic peptide (BNP), and neuron-specific enolase (NSE) as a critical biomarker in stroke.

Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.

Utilization of silicon nanowire field-effect transistors for the detection of a cardiac biomarker, cardiac troponin I and their applications involving animal models

This study develops an ultrasensitive electrical device, the silicon nanowire-field effect transistor (SiNW-FET) for detection of cardiac troponin I (cTnI) in obesity induced myocardial injury. The biosensor device utilizes metal-oxide-semiconductor (MOS) compatible top-down methodology for the fabrication process. After fabrication, the surface of the SiNW is modified with the cTnI monoclonal antibody (Mab-cTnI) upon covalent immobilization to capture cTnI antigen. The sensitivity of the device is also examined using cTnI at different concentrations with the lowest detection limit of 0.016 ng/mL. The electrocardiogram (ECG), magnetic resonance imaging (MRI), and superior vena cave (SVC) provide more information about cardiac responses in a mouse model of acute myocardial infarction (AMI). Further, magnetic resonance imaging helps to evaluate the cardiac output of an obesity induced myocardial injury mouse model. These methods play an essential role in monitoring the obesity based cardiac injury and hence, these studies were carried out. This is the first report to use the ECG, MRI, and SVC sampling methods to study the obesity based cardiac injury involving Syrian hamsters as animal models. The proposed SiNW-FET in this study shows greater sensitivity than the previously developed devices and demonstrates great potential for future applications in point-of-care (POC) diagnosis.

Silicon Nanowires and their Impact on Cancer Detection and Monitoring

Since the inception of silicon nanowires (SINWs)-based biosensors in 2001, SINWs employed in various detection schemes have routinely demonstrated label-free, real-time, sub femtomolar detection of both protein and nucleic acid analytes. This has allowed SiNW-based biosensors to integrate into the field of cancer detection and cancer monitoring and thus have the potential to be a paradigm shift in how cancer biomarkers are detected and monitored. Combining this with several promising fields such as liquid biopsies and targeted oncology, SiNW based biosensors represents an opportunity for cancer monitoring and treatment to be a more dynamic process. Such advances provide clinicians with more information on the molecular landscape of cancer patients which can better inform cancer treatment guidelines.

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.

Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n⁺-n^--n⁺ Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H₂) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H₂ sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H₂-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H₂ sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H₂ sensing.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

Aptamer-Based Field-Effect Transistor for Detection of Avian Influenza Virus in Chicken Serum

Early diagnosis of the highly pathogenic H5N1 avian influenza virus (AIV) is significant for preventing and controlling a global pandemic. However, there is no existing electrical biosensor for detecting biomarkers for AIV in clinically relevant samples such as chicken serum. Herein, we report the first use of an aptamer-functionalized field-effect transistor (FET) as a label-free sensor for AIV detection in chicken serum. A DNA aptamer is employed as a sensitive and selective receptor for hemagglutinin (HA) protein, which is a biomarker for AIVs. This aptamer is immobilized on a gold microelectrode that is connected to the gate of a reusable FET transducer. The specific binding of the target protein results in a change in the surface potential, which generates a signal response of the FET transducer. We hypothesize that a conformational change in the DNA aptamer upon specific binding of HA protein may alter the surface potential. The signal of the aptamer-based FET biosensor increased linearly with the increase in the logarithm of HA protein concentration in a dynamic range of 10 pM to 10 nM with a detection limit of 5.9 pM. The selectivity of the biosensor for HA protein was confirmed by employing relevant interfering proteins. The proposed biosensor was successfully applied to the selective detection of HA protein in a chicken serum sample. Owing to its simple and low-cost architecture, portability, and sensitivity, the aptamer-based FET biosensor has potential as a point-of-care diagnosis of H5N1 AIVs in clinical samples.

Electrochemical sensory detection of Sus scrofa mtDNA for food adulteration using hybrid ferrocenylnaphthalene diimide intercalator as a hybridization indicator

In this study, an electrochemical DNA biosensor was developed based on the fabrication of silicon nanowires/platinum nanoparticles (SiNWs/PtNPs) on a screen-printed carbon electrode (SPCE) for the detection of Sus scrofa mitochondrial DNA (mtDNA) in food utilizing a new hybrid indicator, ferrocenylnaphthalene diimide (FND). The morphology and elemental composition of the SiNWs/PtNPs-modified SPCE was analyzed by field emission scanning electron microscopy (FESEM) combined with energy dispersive X-ray spectroscopy (EDX). Cyclic voltammetry (CV) was used to study the electrical contact between the PtNPs and the screen-printed working electrode through SiNWs, while electrochemical impedance spectroscopy (EIS) was used to measure the charge transfer resistance of the modified electrode. The results clearly showed that the SiNWs/PtNPs were successfully coated onto the electrode and the effective surface area for the SiNWs/PtNPs-modified SPCE was increased 16.8 times as compared with that of the bare SPCE. Differential pulse voltammetry used for the detection of porcine DNA with FND as an intercalator confirmed its specific binding to the double-stranded DNA (dsDNA) sequences. The developed biosensor showed a selective response towards complementary target DNA and was able to distinguish non-complementary and mismatched DNA oligonucleotides. The SiNWs/PtNPs-modified SPCE that was fortified with DNA hybridization demonstrated good linearity in the range of 3 × 10⁻⁹ M to 3 × 10⁻⁵ M (R² = 0.96) with a detection limit of 2.4 × 10⁻⁹ M. A cross-reactivity study against various types of meat and processed food showed good reliability for porcine samples.

An electrochemical DNA biosensor was developed based on the fabrication of silicon nanowires/platinum nanoparticles on a screen-printed carbon electrode for the detection of Sus scrofa mitochondrial DNA in food.

Ultrasensitive aptamer-based protein assays based on one-dimensional core-shell nanozymes

In enzyme-based immunoassys, the use of natural enzyme has been remarkably restricted by the inconvenience in preparation and storage, especially for point-of-care testing. Nanozymes, which can mimic the functions of natural enzymes, have been regarded as promising alternatives due to their robust stability and convenience in fabrication. Here we fabricated one-dimensional Fe₃O₄@C core-shell nanostructures via a solvent-thermal method. Thus prepared nanocomposites showed excellent peroxidase-like activity, capable of catalyzing chromogenic substrates into colored products in the presence of H₂O₂. We then developed a nanozyme-linked aptamer sorbent assay (NLASA) in a sandwich format, in which the as-prepared Fe₃O₄@C nanowires were employed as catalytic labels for colorimetric detection by naked eyes. In the detection of platelet-derived growth factor BB (PDGF-BB), this assay reliably exhibited detection limits as low as 10 fM, with a working range from 10 fM to 100 nM. By incorporating G-quadruplex-hemin DNAzyme with Fe₃O₄@C nanowires, the detection limit could be further lowered to 50 aM. The detection limit of PDGF-BB in 50% human serum was 100 fM. This ultrasensitive, cost-effective and easy-to-operate sensing platform offers new opportunities for protein detection in clinical diagnosis.

Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors

Rather than the internal genome nucleic acids, the biomolecules on the surface of the influenza virus itself should be detected for a more exact and rapid point-of-care yes/no decision for influenza virus-induced infectious diseases. This work demonstrates the ultrasensitive electrical detection of the HA1 domain of hemagglutinin (HA), a representative viral surface protein of the influenza virus, using the top-down complementary metal oxide semiconductor (CMOS) processed silicon nanowire (SiNW) field-effect transistor (FET) configuration. Cytidine-5′-monophospho-N-acetylneuraminic acid (CMP-NANA) was employed as a probe that specifically binds both to the aldehyde self-aligned monolayer on the SiNWs and to HA1 simultaneously. CMP-NANA was serially combined with two kinds of linkers, namely 3-aminopropyltriethoxysilane and glutaraldehyde. The surface functionalization used was verified using the purification of glutathione S-transferase-tagged HA1, contact angle measurement, enzyme-linked immunosorbent assay test, and isoelectric focusing analysis. The proposed functionalized SiNW FET showed high sensitivities of the threshold voltage shift (ΔV_T) ~51 mV/pH and the ΔV_T = 112 mV (63 mV/decade) with an ultralow detectable range of 1 fM of target protein HA1.

The influence of geometry and other fundamental challenges for bio-sensing with field effect transistors

We present a review of field effect transistors (FET) from the point of view of their applications to label-free sensing in the era of genomics and proteomics. Here, rather than a collection of Bio-FET achievements, we propose an analysis of the different issues hampering the use of these devices into clinical applications. We make a particular emphasis on the influence of the sensor geometry in the phenomena of mass transport of analytes, which is a topic that has been traditionally overlooked in the analysis and design of biosensors, but that plays a central role in the achievement of low limits of detection. Other issues like the screening of charges by the ions in liquids with physiological ionic strength and the non-specific binding are also reviewed. In conclusion, we give an overview of different solutions that have been proposed to address all these challenges, demonstrating the potential of field effect transistors owing to their ease of integration with other semiconductor components for developing cost-effective, highly multiplexed sensors for next-generation medicines.

Nanostructure-based Sensitive Electrochemical Immunosensors

It is well-known that electrochemical immunosensors have many advantages, including but not limited to high sensitivity, simplicity in application, low-cost production, automated control and potential miniaturization. Due to specific antigen–antibody recognition, electrochemical immunosensors also have provided exceptional possibilities for real-time trace detection of analytical biotargets, which consists of small molecules (such as natural toxins and haptens), macromolecules, cells, bacteria, pathogens or viruses. Recently, the advances in the development of electrochemical immunosensors can be classified into the following directions: the first is using electrochemical detection techniques (voltammetric, amperometric, impedance spectroscopic, potentiometric, piezoelectric, conductometric and alternating current voltammetric) to achieve high sensitivity regarding the electrochemical change of electrochemical signal transduction; the second direction is developing sensor configurations (microfluidic and paper-based platforms, microelectrodes and electrode arrays) for simultaneous multiplex high-throughput analyses; and the last is designing nanostructured materials serving as sensing interfaces to improve sensor sensitivity and selectivity. This chapter introduces the working principle and summarizes the state-of-the-art of electrochemical immunosensors during the past few years with practically relevant details for: (a) metal nanoparticle- and quantum dot-labeled immunosensors; (b) enzyme-labeled immunosensors; and (c) magnetoimmunosensors. The importance of various types of nanomaterials is also thoroughly reviewed to obtain an insight into understanding the theoretical basis and practical orientation for the next generation of diagnostic devices.

Hybrid Silicon Nanowire Devices and Their Functional Diversity

In the pool of nanostructured materials, silicon nanostructures are known as conventionally used building blocks of commercially available electronic devices. Their application areas span from miniaturized elements of devices and circuits to ultrasensitive biosensors for diagnostics. In this Review, the current trends in the developments of silicon nanowire-based devices are summarized, and their functionalities, novel architectures, and applications are discussed from the point of view of analog electronics, arisen from the ability of (bio)chemical gating of the carrier channel. Hybrid nanowire-based devices are introduced and described as systems decorated by, e.g., organic complexes (biomolecules, polymers, and organic films), aimed to substantially extend their functionality, compared to traditional systems. Their functional diversity is explored considering their architecture as well as areas of their applications, outlining several groups of devices that benefit from the coatings. The first group is the biosensors that are able to represent label-free assays thanks to the attached biological receptors. The second group is represented by devices for optoelectronics that acquire higher optical sensitivity or efficiency due to the specific photosensitive decoration of the nanowires. Finally, the so-called new bioinspired neuromorphic devices are shown, which are aimed to mimic the functions of the biological cells, e.g., neurons and synapses.

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Silicon nanowires (SiNWs) are a widely used technology for sensing applications. Complementary metal-oxide-semiconductor (CMOS) integration of SiNWs advances lab-on-chip (LOC) technology and offers opportunities for read-out circuit integration, selective and multiplexed detection. In this work, we propose novel scalable pixel-based biosensors exploiting the integration of SiNWs with CMOS in fully-depleted silicon-on-insulator technology. A detailed description of the wafer-scale fabrication of SiNW pixels using the CMOS compatible sidewall-transfer-lithography as an alternative to widely investigated time inefficient e-beam lithography is presented. Each 60 nm wide SiNWs sensor is monolithically connected to a control transistor and novel on-chip fluid-gate forming an individual pixel that can be operated in two modes: biasing transistor frontgate (V _G) or substrate backgate (V _BG). We also present the first electrical results of single N and P-type SiNW pixels. In frontgate mode, N and P-type SiNW pixels exhibit subthreshold slope (SS) ≈ 70-80 mV/dec and I _on/I _off ≈ 10⁵. The N-type and P-type pixels have an average threshold voltage, Vth of -1.7 V and 0.85 V respectively. In the backgate mode, N and P-type SiNW pixels exhibit SS ≈ 100-150 mV/dec and I _on/I _off ≈ 10⁶. The N and P-type pixels have an average V _th of 5 V and -2.5 V respectively. Further, the influence of the backgate and frontgate voltage on the switching characteristics of the SiNW pixels is also studied. In the frontgate mode, the V _th of the SiNW pixels can be tuned at 0.2 V for 1 V change in V _BG for N-type or at -0.2 V for -1 V change in V _BG for P-type pixels. In the backgate mode, it is found that for stable operation of the pixels, the V _G of the N and P-type transistors must be in the range 0.5-2.5 V and 0 V to -2.5 V respectively.

High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing

The development of next generation medicines demands more sensitive and reliable label-free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturization with the expectation of improving sensitivity and response time but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high height to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterized their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, establishing an advantage in linearity and lower device resistance to provide higher current signals for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimization of reliability and efficiency in terms of limits of detection for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.

3D Printed Sensors for Biomedical Applications: A Review

This paper showcases a substantial review on some of the significant work done on 3D printing of sensors for biomedical applications. The importance of 3D printing techniques has bloomed in the sensing world due to their essential advantages of quick fabrication, easy accessibility, processing of varied materials and sustainability. Along with the introduction of the necessity and influence of 3D printing techniques for the fabrication of sensors for different healthcare applications, the paper explains the individual methodologies used to develop sensing prototypes. Six different 3D printing techniques have been explained in the manuscript, followed by drawing a comparison between them in terms of their advantages, disadvantages, materials being processed, resolution, repeatability, accuracy and applications. Finally, a conclusion of the paper is provided with some of the challenges of the current 3D printing techniques about the developed sensing prototypes, their corresponding remedial solutions and a market survey determining the expenditure on 3D printing for biomedical sensing prototypes.

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200⁻600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions' spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.