Transfer-free electrical insulation of epitaxial graphene from its metal substrate

Recent progress in the theoretical design of two-dimensional ferroelectric materials

Two-dimensional (2D) ferroelectrics (FEs), which maintain stable electric polarization in ultrathin films, are a promising class of materials for the development of various miniature functional devices. In recent years, several 2D FEs with unique properties have been successfully fabricated through experiments. They have been found to exhibit some unique properties either by themselves or when they are coupled with other functional materials (e.g., ferromagnetic materials, materials with 5d electrons, etc.). As a result, several new types of 2D FE functional devices have been developed, exhibiting excellent performance. As a type of newly discovered 2D functional material, the number of 2D FEs and the exploration of their properties are still limited and this calls for further theoretical predictions. This review summarizes recent progress in the theoretical predictions of 2D FE materials and provides strategies for the rational design of 2D FE materials. The aim of this review is to provide guidelines for the design of 2D FE materials and related functional devices.

Two-Dimensional Ultrathin Silica Films

Two-dimensional (2D) ultrathin silica films have the potential to reach technological importance in electronics and catalysis. Several well-defined 2D-silica structures have been synthesized so far. The silica bilayer represents a 2D material with SiO₂ stoichiometry. It consists of precisely two layers of tetrahedral [SiO₄] building blocks, corner connected via oxygen bridges, thus forming a self-saturated silicon dioxide sheet with a thickness of ∼0.5 nm. Inspired by recent successful preparations and characterizations of these 2D-silica model systems, scientists now can forge novel concepts for realistic systems, particularly by atomic-scale studies with the most powerful and advanced surface science techniques and density functional theory calculations. This Review provides a solid introduction to these recent developments, breakthroughs, and implications on ultrathin 2D-silica films, including their atomic/electronic structures, chemical modifications, atom/molecule adsorptions, and catalytic reactivity properties, which can help to stimulate further investigations and understandings of these fundamentally important 2D materials.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

A Simplified Method for Patterning Graphene on Dielectric Layers

The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO₂ with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

Selecting 'convenient observers' to probe the atomic structure of CVD graphene on Ir(111) via photoelectron diffraction

CVD graphene grown on metallic substrates presents, in several cases, a long-range periodic structure due to a lattice mismatch between the graphene and the substrate. For instance, graphene grown on Ir(111), displays a corrugated supercell with distinct adsorption sites due to a variation of its local electronic structure. This type of surface reconstruction represents a challenging problem for a detailed atomic surface structure determination for experimental and theoretical techniques. In this work, we revisited the surface structure determination of graphene on Ir(111) by using the unique advantage of surface and chemical selectivity of synchrotron-based photoelectron diffraction. We take advantage of the Ir 4f photoemission surface state and use its diffraction signal as a probe to investigate the atomic arrangement of the graphene topping layer. We determine the average height and the overall corrugation of the graphene layer, which are respectively equal to 3.40 ± 0.11 Å and 0.45 ± 0.03 Å. Furthermore, we explore the graphene topography in the vicinity of its high-symmetry adsorption sites and show that the experimental data can be described by three reduced systems simplifying the moiré supercell multiple scattering analysis.

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Graphene on SiO₂ enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO₂ film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO₂ film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO₂ has been produced. The insulating nature of the thick amorphous SiO₂ is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface

We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection.

Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices

Ferroelectric (FE) thin films have been investigated for many years due to their broad applications in electronic devices. It was recently demonstrated that FE functionality persists in ultrathin films, possibly even in monolayers of two-dimensional (2D) FEs. However, the feasibility of 2D-based FE functional devices remains an open challenge. Here, we employ density-functional-theory calculations to propose and document the possible integration of graphene with 2D FE materials on metal substrates in the form of functional FE devices. We show that monolayers of proposed M₂O₃ (M = Al, Y) in the quintuple layer (QL) In₂Se₃ structure are stable 2D FE materials and that QL-M₂O₃ is a functional tunnel barrier in a graphene/QL-M₂O₃/Ru heterostructure. The QL-M₂O₃ barrier width can be modulated by its polarization direction, whereby the heterostructure can function as a prototype ferroelectric tunnel junction. Moreover, alternating the polarization of QL-M₂O₃ modulates the doping type of graphene, enabling the fabrication of graphene p-n junctions. By design, the proposed heterostructures can in principle be fabricated by intercalation, which is known to produce high-quality, large-scale 2D-based heterostructures.

Hubbard excitons in two-dimensional nanomaterials

Excitons in two-dimensional nanomaterials are studied by solving the many-electron Hamiltonian with a configuration-interaction approach. It is shown that graphene or phosphorene nanoflakes can not accommodate any excitonic bound states if the long-range Coulomb interaction is suppressed when the systems are placed in a high-k dielectric environment or on a metal substrate. Hence it is revealed that an electron-hole pair created by an optical excitation does not always form an exciton even in a confined nanostructure. The negative exciton binding energy is found to exhibit distinct dependence on the strength of short-range Coulomb interaction as the system undergoes a phase transition from non-magnetic to anti-ferromagnetic. It is further shown that the electron-hole pair may form an exciton state only when the long-range Coulomb interaction is recovered in the nanoflakes.

Altering the Properties of Graphene on Cu(111) by Intercalation of Potassium Bromide

The catalytic growth on transition metal surfaces provides a clean and controllable route to obtain defect-free, monocrystalline graphene. However, graphene's optical and electronic properties are diminished by the interaction with the metal substrate. One way to overcome this obstacle is the intercalation of atoms and molecules decoupling the graphene and restoring its electronic structure. We applied noncontact atomic force microscopy to study the structural and electric properties of graphene on clean Cu(111) and after the adsorption of KBr or NaCl. By means of Kelvin probe force microscopy, a change in graphene's work function has been observed after the deposition of KBr, indicating a changed graphene-substrate interaction. Further measurements of single-electron charging events as well as X-ray photoelectron spectroscopy confirmed an electronic decoupling of the graphene islands by KBr intercalation. The results have been compared with density functional theory calculations, supporting our experimental findings.

Stable Silicene in Graphene/Silicene Van der Waals Heterostructures

Silicene-based van der Waals heterostructures are theoretically predicted to have interesting physical properties, but their experimental fabrication has remained a challenge because of the easy oxidation of silicene in air. Here, the fabrication of graphene/silicene van der Waals heterostructures by silicon intercalation is reported. Density functional theory calculations show weak interactions between graphene and silicene layers, confirming the formation of van der Waals heterostructures. The heterostructures show no observable damage after air exposure for extended periods, indicating good air stability. The I-V characteristics of the vertical graphene/silicene/Ru heterostructures show rectification behavior.

Further Investigations into the Capacitive Imaging Technique Using a Multi-Electrode Sensor

As a novel non-destructive testing technique, capacitive imaging (CI) has been used to detect defects within the insulation layer and metal surface of an insulated metallic structure, that is, pipe or vessel. Due to the non-linearity of the probing field, the defects at different depths in the insulation layer are difficult to compare accurately using the conventional CI sensor with a single pair of electrodes. In addition, the conventional CI sensor cannot provide adequate information to discriminate the defects in the insulation layer and metal surface. In order to solve the above-mentioned problems, the multi-electrode sensor is introduced. The multi-electrode sensor uses multiple quasi-static fringing electric fields generated by an array of coplanar electrodes to obtain extra information about the defects in the specimen. In this work, the feasibility of multiple quasi-static electric fields detecting the defects was demonstrated and the Measurement Sensitivity Distributions (MSDs) of the multi-electrode sensor detecting the defects were acquired using the FEM models. The simulation and experimental results show that the Dynamic Change Rates (DCRs) of the measured values obtained at the center of the defects in the insulator layer and metal surface present different variation patterns, which can be used to discriminate these two different kinds of defects. The reasons for the different variation patterns of DCRs were explained by the changing trends of MSDs with increased electrode separation. In addition, it was demonstrated that the different depths of the defects in the insulator layer can be compared accurately by comprehensive analysis of the detection results from all the electrode pairs.

The adsorption of silicon on an iridium surface ruling out silicene growth

The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K. Density functional theory calculations were carried out in order to evaluate the stability of the different Si adsorption configurations as a function of the coverage. Results indicate that, at low coverage, the Si adatoms tend to occupy the hollow Ir sites, although a small fraction of them penetrates the first Ir layer. Si penetration of the Ir surface can take place if the energy gained upon Si adsorption is used to displace the Ir surface atoms, rather then being dissipated differently. At a Si coverage of ∼1 monolayer, the Ir 4f spectrum indicates that not only the metal surface but also the layers underneath are perturbed. Our results point out that the Si/Ir(111) interface is unstable towards Si-Ir intermixing, in agreement with the silicide phase formation reported in the literature for the reverted interface.

Chemistry below graphene: decoupling epitaxial graphene from metals by potential-controlled electrochemical oxidation

While high-quality defect-free epitaxial graphene can be efficiently grown on metal substrates, strong interaction with the supporting metal quenches its outstanding properties. Thus, protocols to transfer graphene to insulating substrates are obligatory, and these often severely impair graphene properties by the introduction of structural or chemical defects. Here we describe a simple and easily scalable general methodology to structurally and electronically decouple epitaxial graphene from Pt(111) and Ir(111) metal surfaces. A multi-technique characterization combined with ab-initio calculations was employed to fully explain the different steps involved in the process. It was shown that, after a controlled electrochemical oxidation process, a single-atom thick metal-hydroxide layer intercalates below graphene, decoupling it from the metal substrate. This decoupling process occurs without disrupting the morphology and electronic properties of graphene. The results suggest that suitably optimized electrochemical treatments may provide effective alternatives to current transfer protocols for graphene and other 2D materials on diverse metal surfaces.

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.

Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)

The intrinsic electronic structure of chevron graphene nanoribbons are revealed through in situ silicon intercalation.

Probing dimensionality using a simplified 4-probe method

4-probe electrical measurements have been in existence for many decades. One of the most useful aspects of the 4-probe method is that it is not only possible to find the resistivity of a sample (independently of the contact resistances), but that it is also possible to probe the dimensionality of the sample. In theory, this is straightforward to achieve by measuring the 4-probe resistance as a function of probe separation. In practice, it is challenging to move all four probes with sufficient precision over the necessary range. Here, we present an alternative approach. We demonstrate that the dimensionality of the conductive path within a sample can be directly probed using a modified 4-probe method in which an unconventional geometry is exploited; three of the probes are rigidly fixed, and the position of only one probe is changed. This allows 2D and 3D (and other) contributions the to resistivity to be readily disentangled. The required experimental instrumentation can be vastly simplified relative to traditional variable spacing 4-probe instruments.

Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy

The electronic properties of graphene nanoribbons grown on metal substrates are significantly masked by the ones of the supporting metal surface. Here, we introduce a novel approach to access the frontier states of armchair graphene nanoribbons (AGNRs). The in situ intercalation of Si at the AGNR/Au(111) interface through surface alloying suppresses the strong contribution of the Au(111) surface state and allows for an unambiguous determination of the frontier electronic states of both wide and narrow band gap AGNRs. First-principles calculations provide insight into substrate induced screening effects, which result in a width-dependent band gap reduction for substrate-supported AGNRs. The strategy reported here provides a unique opportunity to elucidate the electronic properties of various kinds of graphene nanomaterials supported on metal substrates.

Surface chemistry and catalysis confined under two-dimensional materials

Interfaces between 2D material overlayers and solid surfaces provide confined spaces for chemical processes, which have stimulated new chemistry under a 2D cover.

Modelling of an ultra-thin silicatene/silicon-carbide hybrid film

Recently, a well-ordered silicatene/silicon-carbide hybrid thin-film supported on Ru(0 0 0 1) has been reported (2015 Surf. Sci. 632 9-13). The thin-film consist of a monolayer of corner sharing (SiO4)-tetrahedra on top of a (Si2C3) monolayer supported on the Ru(0 0 0 1) surface. This silicatene/silicon-carbide hybrid system may exhibit interesting properties for nano-technological applications and represents another example of a 2D material. We explore the physical and chemical properties of the silicatene/silicon-carbide thin-film using DFT and compare the vibrational spectra with existing experimental data. The characteristics of the silicatene/silicon-carbide hybrid system are compared with those of the bilayer-silicatene (pure SiO2 film). We found large differences in the adsorption modes of the two thin-films on the Ru(0 0 0 1) support. Whereas the bilayer-silicatene physisorbs on the Ru(0 0 0 1) surface, the silicatene/silicon-carbide layer binds via chemisorption. The chemical properties of the two thin-films were probed by adsorption of H atoms at various positions, as well as by Al-doping and the formation of hydroxyl groups (Al-OH). These results show that despite the similar structure of the top layer and the identical metal support (Ru), the mixed silicatene/silicon-carbide system behaves quite differently from the pure silica two-layer counterpart.

Strain-modulated electronic and thermal transport properties of two-dimensional O-silica

Silica is one of the most abundant materials in the Earth's crust and is a remarkably versatile and important engineering material in various modern science and technology. Recently, freestanding and well-ordered two-dimensional (2D) silica monolayers with octahedral (O-silica) building blocks were found to be theoretically stable by (Wang G et al 2015 J. Phys. Chem. C 119 15654-60). In this paper, by performing first-principles calculations, we systematically investigated the electronic and thermal transport properties of 2D O-silica and also studied how these properties can be tuned by simple mechanical stretching. Unstrained 2D O-silica is an insulator with an indirect band gap of 6.536 eV. The band gap decreases considerably with bilateral strain up to 29%, at which point a semiconductor-metal transition occurs. More importantly, the in-plane thermal conductivity of freestanding 2D O-silica is found to be unusually high, which is around 40 to 50 times higher than that of bulk α-quartz and more than two orders of magnitude higher than that of amorphous silica. The thermal conductivity of O-silica decreases by almost two orders of magnitude when the bilateral stretching strain reaches 10%. By analyzing the mode-dependent phonon properties and phonon-scattering channel, the phonon lifetime is found to be the dominant factor that leads to the dramatic decrease of the lattice thermal conductivity under strain. The very sensitive response of both band gap and phonon transport properties to the external mechanical strain will enable 2D O-silica to easily adapt to the different environment of realistic applications. Our study is expected to stimulate experimental exploration of further physical and chemical properties of 2D silica systems, and offers perspectives on modulating the electronic and thermal properties of related low-dimensional structures for applications such as thermoelectric, photovoltaic, and optoelectronic devices.

Switchable graphene-substrate coupling through formation/dissolution of an intercalated Ni-carbide layer

Control over the film-substrate interaction is key to the exploitation of graphene’s unique electronic properties. Typically, a buffer layer is irreversibly intercalated “from above” to ensure decoupling. For graphene/Ni(111) we instead tune the film interaction “from below”. By temperature controlling the formation/dissolution of a carbide layer under rotated graphene domains, we reversibly switch graphene’s electronic structure from semi-metallic to metallic. Our results are relevant for the design of controllable graphene/metal interfaces in functional devices.

Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

A controllable electrochemical synthesis to convert reduced graphene oxide (rGO) from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs). Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211%) attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3) to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO) glasses.

Non-interacting, sp2 carbon on a ferroelectric lead zirco-titanate: towards graphene synthesis on ferroelectrics in ultrahigh vacuum

Carbon layers grown on lead zirco-titanate (PZT) weakly interact with the substrate and exhibit nearly two dimensional character, up to a carbon surface density approaching that of graphene.

Ground state of bilayer hα-silica: mechanical and electronic properties

The family of two-dimensional (2D) crystals was recently joined by silica, one of the most abundant resources on earth. So far two different polymorphs of this material, namely a tetrahedra-shaped monolayer and a fully saturated bilayer structure, have been synthesized on various metal substrates and their fascinating properties enable 2D silica to hold promise in nanoelectronic device applications. In this paper a new ground state of bilayer-AAr-stacking hα-silica-has been discovered by first principles calculations. The new structure is featured with a formation of Si-Si bonds between all sp(3) hybridized SiO3 triangular pyramids, lying respectively in different silica layers, with an intrinsic rotational angle of about 12.5° along the out-of-plane Si-Si bond. Due to the doubled number of Si-Si bonds in the new structure, the system energy is lowered by nearly three times more than that reported recently in literature (0.8 eV) (Özçelik et al 2014 Phys. Rev. Lett. 112 246803), when compared with the single layer hα-silica. A mechanical property investigation shows that the AAr-stacking bilayer hα-silica possesses high in-plane stiffness and a negative Poisson's ratio, which stems from the intrinsic rotational angle of the SiO3 triangular pyramids. Strikingly, the negative Poisson's ratio evolves into positive at a critical tensile strain ϵ ≈ 1.2%. Such negative-to-positive evolvement is associated with the adaptation of the rotational angle to the applied strain and the structure transition into the nearby valley of the energy landscape. The detailed transition process has been thoroughly analyzed. The electronic properties of the new ground state are also calculated, along with their response to the external strain. Our new ground state structure introduces a new member to the family of 2D bilayer silica materials and is expected to facilitate experimental studies identifying the related structures and exploring further physical and chemical properties of nanoscale systems.

Mechanisms of formation of chemical bonding and defect formation at the a-SiO2/BaTiO3 interfaces

The structure and mechanisms of bonding and defect formation at the interfaces between amorphous silica (a-SiO2) and BaTiO3(0 0 1) were investigated using ab initio molecular dynamics. It was found that the nature of interfacial bonds crucially depends on the BaTiO3 surface termination. In particular, the interface between silica and TiO2-terminated BaTiO3 (BTO) slab is characterised by strong covalent Ti-O-Si bonds, while the interface between silica and BaO-terminated BTO demonstrates ionic character of interfacial bonds and exhibits bond instability. In both cases, the dynamics of oxygen species at oxide interfaces is a driving force of the formation of interfacial bonds and defects.

Fabrication of 2D Heterojunction in Graphene via Low Energy N2(+) Irradiation

Substitutional doping in graphene is locally induced with very low energy nitrogen ions. Irradiated and nonirradiated areas exhibit different charge carrier densities and are separated by a sharp boundary, stable up to 750 °C. The way towards lithographic control of the electronic properties of graphene by ion irradiation is paved, providing a proof of principle for the fabrication of 2D graphene-based heterojunctions.

Ultra-thin silicate films on metals

Silica is one of the key materials in many modern technological applications. 'Surface science' approach for understanding surface chemistry on silica-based materials, on the one hand, and further miniaturization of new generation electronic devices, on the other, all these face the necessity of rational design of the ultrathin silica films on electrically conductive substrates. The review updates recent studies in this field. Despite the structural complexity and diversity of silica, substantial progress has recently been achieved in understanding of the atomic structure of truly 2D silicates.

Oxygen Intercalation of Graphene on Transition Metal Substrate: An Edge-Limited Mechanism

Oxygen intercalation has been proven to be an efficient experimental approach to decouple chemical vapor deposition grown graphene from metal substrate with mild damage, thereby enabling graphene transfer. However, the mechanism of oxygen intercalation and associated rate-limiting step are still unclear on the molecular level. Here, by using density functional theory, we evaluate the thermodynamics stability of graphene edge on transition metal surface in the context of oxygen and explore various reaction pathways and energy barriers, from which we can identify the key steps as well as the roles of metal passivated graphene edges during the oxygen intercalation. Our calculations suggest that in well-controlled experimental conditions, oxygen atoms can be easily intercalated through either zigzag or armchair graphene edges on metal surface, whereas the unwanted graphene oxidation etching can be suppressed. Oxygen intercalation is, thus, an efficient and low-damage way to decouple graphene from a metal substrate while it allows reusing metal substrate for graphene growth.

Approach to multifunctional device platform with epitaxial graphene on transition metal oxide

Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO₂). Our novel direct synthesis of graphene/TiO₂ heterostructure is achieved by C₆₀ deposition on transition Ti metal surface using a molecular beam epitaxy approach and O₂ intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO₂ and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO₂ playing the roles of channel and gate dielectric layers, respectively.

Graphene growth and properties on metal substrates

Graphene-metal interface as one of the interesting graphene-based objects attracts much attention from both application and fundamental science points of view. This paper gives a timely review of the recent experimental works on the growth and the electronic properties of the graphene-metal interfaces. This work makes a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic substrate on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies and applications of the graphene-metal interfaces are discussed.

Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min(-1)) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

Growth from behind: Intercalation-growth of two-dimensional FeO moiré structure underneath of metal-supported graphene

Growth of graphene by chemical vapor deposition on metal supports has become a promising approach for the large-scale synthesis of high quality graphene. Decoupling of the graphene from the metal has been achieved by either mechanical transfer or intercalation of elements/molecules in between the metal and graphene. Here we show that metal stabilized two-dimensional (2D)-oxide monolayers can be grown in between graphene and the metal substrate thus forming 2D-heterostructures that enable tuning of the materials properties of graphene. Specifically, we demonstrate the intercalation-growth of a 2D-FeO layer in between graphene and Pt(111), which can decouple the graphene from the metal substrate. It is known that the 2D-FeO/Pt(111) system exhibits a moiré-structure with locally strongly varying surface potential. This variation in the substrate surface potential modifies the interface charge doping to graphene locally, causing nanometer-scale variation in its work function and Fermi-level shifts relative to its Dirac point.

Comparing graphene growth on Cu(111) versus oxidized Cu(111)

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.

Controlled assembly of graphene-capped nickel, cobalt and iron silicides

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

Defects in bilayer silica and graphene: common trends in diverse hexagonal two-dimensional systems

By combining first-principles and classical force field calculations with aberration-corrected high-resolution transmission electron microscopy experiments, we study the morphology and energetics of point and extended defects in hexagonal bilayer silica and make comparison to graphene, another two-dimensional (2D) system with hexagonal symmetry. We show that the motifs of isolated point defects in these 2D structures with otherwise very different properties are similar, and include Stone-Wales-type defects formed by structural unit rotations, flower defects and reconstructed double vacancies. The morphology and energetics of extended defects, such as grain boundaries have much in common as well. As both sp(2)-hybridised carbon and bilayer silica can also form amorphous structures, our results indicate that the morphology of imperfect 2D honeycomb lattices is largely governed by the underlying symmetry of the lattice.

Induced superconductivity in graphene grown on rhenium

We report a new way to strongly couple graphene to a superconductor. The graphene monolayer has been grown directly on top of a superconducting Re(0001) thin film and characterized by scanning tunneling microscopy and spectroscopy. We observed a moiré pattern due to the mismatch between Re and graphene lattice parameters that we have simulated with ab initio calculations. The density of states around the Fermi energy appears to be position dependent on this moiré pattern. Tunneling spectroscopy performed at 50 mK shows that the superconducting behavior of graphene on Re is well described by the Bardeen-Cooper-Schrieffer theory and stands for a very good interface between the graphene and its metallic substrate.

In situ growth of cellular two-dimensional silicon oxide on metal substrates

Crystalline hexagonally ordered silicon oxide layers with a thickness of less than a nanometer are grown on transition metal surfaces in an in situ electron microscopy experiment. The nucleation and growth of silica bilayers and monolayers, which represent the thinnest possible ordered structures of silicon oxide, are monitored in real time. The emerging layers show structural defects reminiscent of those in graphene and can also be vitreous. First-principles calculations provide atomistic insight into the energetics of the growth process. The interplay between the gain in silica-metal interaction energy due to their epitaxial match and energy loss associated with the mechanical strain of the silica network is addressed. The results of calculations indicate that both ordered and vitreous mono/bilayer structures are possible, so that the actual morphology of the layer is defined by the kinetics of the growth process.

Ultrafast charge transfer at monolayer graphene surfaces with varied substrate coupling

The charge transfer rates of a localized excited electron to graphene monolayers with variable substrate coupling have been investigated by the core hole clock method with adsorbed argon. Expressed as charge transfer times, we find strong variations between ~3 fs (on graphene "valleys" on Ru(0001)) to ~16 fs (quasi-free graphene on SiC, O/Ru(0001), or SiO2/Ru). The values for the "hills" on Gr/Ru and on Gr/Pt(111) are in between, with the ratio 1.7 between the charge transfer times measured on "hills" and "valleys" of Gr/Ru. We discuss the results for Gr on metals in terms of hybridized Ru-C orbitals, which change with the relative Gr-Ru alignment and distance. The charge transfer on the decoupled graphene layers must represent the intrinsic coupling to the graphene empty π* states. Its low rate may be influenced by processes retarding the spreading of charge after transfer.

Fine tuning of graphene-metal adhesion by surface alloying

We show that bimetallic surface alloying provides a viable route for governing the interaction between graphene and metal through the selective choice of the elemental composition of the surface alloy. This concept is illustrated by an experimental and theoretical characterization of the properties of graphene on a model PtRu surface alloy on Ru(0001), with a concentration of Pt atoms in the first layer between 0 and 50%. The progressive increase of the Pt content determines the gradual detachment of graphene from the substrate, which results from the modification of the carbon orbital hybridization promoted by Pt. Alloying is also found to affect the morphology of graphene, which is strongly corrugated on bare Ru, but becomes flat at a Pt coverage of 50%. The method here proposed can be readily extended to several supports, thus opening the way to the conformal growth of graphene on metals and to a full tunability of the graphene-substrate interaction.