On the origin of photoluminescence in silicon nanocrystals: pressure-dependent structural and optical studies

Size-Tunable Band Structure and Optical Properties of Colloidal Silicon Nanocrystals Synthesized via Thermal Disproportionation of Hydrogen Silsesquioxane Polymers

Dodecane-capped silicon nanocrystals (NCs) were synthesized by using a low-temperature (800-1100 °C) polymer variant of traditional hydrogen silsesquioxane thermal disproportionation. Highly crystalline Si NCs having tunable diameters (3.0-6.7 nm) and thus photoluminescence (PL) peaks (1.68-1.29 eV) were attained via changes in the maximum annealing temperature. Modifications in the NC band structure with diameter were explored by comparison of emission with absorption spectra obtained from diffuse reflectance spectroscopy. Large apparent energy shifts between onsets and PL were noted, being significant for smaller NCs (≤∼4.0 nm). This, along with comparatively "softer" onsets, is commensurate with density of states elongation around PL peaks associated with increasing confinement predicted for indirect semiconductor nanostructures. Tauc analyses of absorption additionally revealed three distinguishable optical transitions in all NCs: attributed to indirect Γ25'-Δ1 in lower energy ranges (likely the emission progenitor), indirect Γ25'-L1 overtaken by quasi-direct Γ-X wave function mixing for NC diameters ≤∼4.0 nm within the midenergy regime, and direct Γ25'-Γ15 transitions at energies nearing and above ∼3 eV.

Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?

Silicon quantum dots (QDs) are a promising non-toxic alternative to the already well-developed platform of light-emitting semiconductor QDs based on III-V and II-VI materials. Oxidized SiQDs or those surface-terminated with long alkyl chains typically feature long-lived orange-red photoluminescence originating in quantum-confined core states. However, sometimes an additional short-lived PL band, whose mechanism is still highly debated, is reported. Here, we perform a detailed study of the room-temperature PL of SiQDs using samples covering three main fabrication techniques. We find evidence for the presence of only one set of radiative processes in addition to the typical long-lived PL. Moreover, we experimentally determine the ratio between the short- and long-lived PL component, obtaining a wide range of values (0.003 - 0.1) depending on the type of sample. In accordance with an already published report, we observe a tendency of SiQDs with stronger short-lived PL to have lower external quantum yield. We explain this trend using a model of the optical performance of an ensemble of QDs with widely varying optical characteristics through a mechanism we call selective lifetime-based quenching.

Not all silicon quantum dots are equal: photostability of silicon quantum dots with and without a thick amorphous shell

Luminescent colloidal silicon quantum dots (SiQDs) are sustainable alternatives to metal-based QDs for various optical applications. While the materials are reliant on their photoluminescence efficiency, the relationship between the structure and photostability of SiQDs is yet to be well studied. An amorphous silicon (a-Si) shell was recently discovered in SiQDs prepared by thermally-processed silicon oxides. As a-Si is known as a source of defects upon UV irradiation, the disordered shell could potentially have an adverse effect on the optical properties of nanoparticles. Herein, the photostability of ∼5 nm diameter SiQDs with an amorphous shell was compared with that of over-etched SiQDs of equivalent dimensions that bore an a-Si shell of negligible thickness. An UV-induced degradation study was conducted by subjecting toluene solutions of SiQDs to 365 nm light-emitting diodes (LEDs) under an inert atmosphere for predetermined times up to 72 hours. The structure, composition, and optical responses of the exposed SiQDs were evaluated.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Single-atom infrared emission in doped silicon nanocrystals

Silicon luminescence, due to silicon being abundant, non-toxic and harmless, is a topic of pivotal importance in optoelectronics and biological imaging. However, a major challenge in developing high-efficiency silicon light sources is the relatively weak allowable transitions. This study focuses on single atom-doped silicon nanocrystals (Si NCs) and theoretically investigates the emission behavior of single atoms within a tetrahedral coordination field. Doping a single atom in Si NCs can result in a ∼102 times improvement at least in the squared transition dipole moment (TDM2), and induce a spectral shift towards near- and mid-infrared wavelengths. These findings offer a strong foundation for designing Si NCs for on-chip optical communication and single photon emitters.

Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots

Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer (η_ET) from Si to Er³⁺ is crucial. In order to achieve high η_ET, we used nonthermal plasma to synthesize Si quantum dots (QDs) hyperdoped with Er at the concentration of ~1% (i.e., ~5 × 10²⁰ cm^-3). The QD surface was subsequently modified by hydrosilylation using 1-dodecene. The Er-hyperdoped Si QDs emitted near-infrared (NIR) light at wavelengths of ~830 and ~1540 nm. An ultrahigh η_ET (~93%) was obtained owing to the effective energy transfer from Si QDs to Er³⁺, which led to the weakening of the NIR emission at ~830 nm and the enhancement of the NIR emission at ~1540 nm. The coupling constant (γ) between Si QDs and Er³⁺ was comparable to or greater than 1.8 × 10^-12 cm³·s^-1. The temperature-dependent photoluminescence and excitation rate of Er-hyperdoped Si QDs indicate that strong coupling between Si QDs and Er³⁺ allows Er³⁺ to be efficiently excited.

Adsorption Behaviors of Chlorosilanes, HCl, and H2 on the Si(100) Surface: A First-Principles Study

The hydrochlorination process is a necessary technological step for the production of polycrystalline silicon using the Siemens method. In this work, the adsorption behaviors of silicon tetrachloride (SiCl₄), silicon dichloride (SiCl₂), dichlorosilane (SiH₂Cl₂), trichlorosilane (SiHCl₃), HCl, and H₂ on the Si(100) surface were investigated by first-principles calculations. The different adsorption sites and adsorption orientations were taken into account. The adsorption energy, charge transfer, and electronic properties of different adsorption systems were systematically analyzed. The results show that all of the molecules undergo dissociative chemisorption at appropriate adsorption sites, and SiHCl₃ has the largest adsorption strength. The analysis of charge transfer indicates that all of the adsorbed molecules behave as electron acceptors. Furthermore, strong interactions can be found between gas molecules and the Si(100) surface as proved by the analysis of electronic properties. In addition, SiCl₂ can be formed by the dissociation of SiCl₄, SiH₂Cl₂, and SiHCl₃. The transformation process from SiCl₄ to SiCl₂ is exothermic without any energy barrier. While SiH₂Cl₂ and SiHCl₃ can be spontaneously dissociated into SiHCl₂, SiHCl₂ should overcome about 110 kJ/mol energy barrier to form SiCl₂. Our works can provide theoretical guidance for hydrochlorination of SiCl₄ in the experimental method.

Probing electrical properties of a silicon nanocrystal thin film using x-ray photoelectron spectroscopy

We performed x-ray photoelectron spectroscopy measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and the capacitance of the thin film. The measurement consists of the application of 10 V DC or square wave pulses of 10 V amplitude to the sample at various frequencies ranging from 0.01 to 1 MHz while recording x-ray photoemission data. To analyze the data, we propose three different models with varying degrees of accuracy. The calculated capacitance of SiNCs agrees with the experimental value in the literature.

"Turning the dials": controlling synthesis, structure, composition, and surface chemistry to tailor silicon nanoparticle properties

Silicon nanoparticles (SiNPs) can be challenging to prepare with defined size, crystallinity, composition, and surface chemistry. As is the case for any nanomaterial, controlling these parameters is essential if SiNPs are to realize their full potential in areas such as alternative energy generation and storage, sensors, and medical imaging. Numerous teams have explored and established innovative synthesis methods, as well as surface functionalization protocols to control these factors. Furthermore, substantial effort has been expended to understand how the abovementioned parameters influence material properties. In the present review we provide a commentary highlighting the benefits and limitations of available methods for preparing silicon nanoparticles as well as demonstrations of tailoring optical and electronic properties through definition of structure (i.e., crystalline vs. amorphous), composition and surface chemistry. Finally, we highlight potential opportunities for future SiNP studies.

Disentangling Electron-Phonon Coupling and Thermal Expansion Effects in the Band Gap Renormalization of Perovskite Nanocrystals

The complex electron-phonon interaction occurring in bulk lead halide perovskites gives rise to anomalous temperature dependences, like the widening of the electronic band gap as temperature increases. However, possible confinement effects on the electron-phonon coupling in the nanocrystalline version of these materials remain unexplored. Herein, we study the temperature (ranging from 80 K to ambient) and hydrostatic pressure (from atmospheric to 0.6 GPa) dependence of the photoluminescence of ligand-free methylammonium lead triiodide nanocrystals with controlled sizes embedded in a porous silica matrix. This analysis allowed us to disentangle the effects of thermal expansion and electron-phonon interaction. As the crystallite size decreases, the electron-phonon contribution to the gap renormalization gains in importance. We provide a plausible explanation for this observation in terms of quantum confinement effects, showing that neither thermal expansion nor electron-phonon coupling effects may be disregarded when analyzing the temperature dependence of the optoelectronic properties of perovskite lead halide nanocrystals.

Pressure-Induced Optical Transitions in Metal Nanoclusters

Currently, a comprehensive understanding of the relationship between atomic structures and optical properties of ultrasmall metal nanoclusters with diameters between 1 and 3 nm is lacking. To address this challenge, it is necessary to develop tools for perturbing the atomic structure and modulating the optical properties of metal nanoclusters beyond what can be achieved using synthetic chemistry. Here, we present a systematic high-pressure study on a series of atomically precise ligand-protected metal nanoclusters. A diamond anvil cell is used as a high-pressure chamber to gradually compress the metal nanoclusters, while their optical properties are monitored in situ. Our experimental results show that the photoluminescence (PL) of these nanoclusters is enhanced by up to 2 orders of magnitude at pressures up to 7 GPa. The absorption onset red-shifts with increasing pressure up to ∼12 GPa. Density functional theory calculations reveal that the red-shift arises because of narrowing of the spacing between discrete energy levels of the cluster due to delocalization of the core electrons to the carbon ligands. The pressure-induced PL enhancement is ascribed to (i) the enhancement of the near-band-edge transition strength, (ii) suppression of the nonradiative vibrations, and (iii) hindrance of the excited-state structural distortions. Overall, our results demonstrate that high pressure is an effective tool for modulating the optical properties and improving the luminescence brightness of metal nanoclusters. The insights into structure-property relations obtained here also contribute to the rational design of metal nanoclusters for various optical applications.

Origin of Plasticity in Nanostructured Silicon

The mechanism of plasticity in nanostructured Si has been intensively studied over the past decade but still remains elusive. Here, we used in situ high-pressure radial x-ray diffraction to simultaneously monitor the deformation and structural evolution of a large number of randomly oriented Si nanoparticles (SiNPs). In contrast to the high-pressure β-Sn phase dominated plasticity observed in large SiNPs (∼100  nm), small SiNPs (∼9  nm) display a high-pressure simple hexagonal phase dominated plasticity. Meanwhile, dislocation activity exists in all of the phases, but significantly weakens as the particle size decreases and only leads to subtle plasticity in the initial diamond cubic phase. Furthermore, texture simulations identify major active slip systems in all of the phases. These findings elucidate the origin of plasticity in nanostructured Si under stress and provide key guidance for the application of nanostructured Si.

Bright Silicon Nanocrystals from a Liquid Precursor: Quasi-Direct Recombination with High Quantum Yield

Silicon nanocrystals (SiNCs) with bright bandgap photoluminescence (PL) are of current interest for a range of potential applications, from solar windows to biomedical contrast agents. Here, we use the liquid precursor cyclohexasilane (Si₆H₁₂) for the plasma synthesis of colloidal SiNCs with exemplary core emission. Through size separation executed in an oxygen-shielded environment, we achieve PL quantum yields (QYs) approaching 70% while exposing intrinsic constraints on efficient core emission from smaller SiNCs. Time-resolved PL spectra of these fractions in response to femtosecond pulsed excitation reveal a zero-phonon radiative channel that anticorrelates with QY, which we model using advanced computational methods applied to a 2 nm SiNC. Our results offer additional insight into the photophysical interplay of the nanocrystal surface, quasi-direct recombination, and efficient SiNC core PL.

Critical assessment of wet-chemical oxidation synthesis of silicon quantum dots

The wet-chemical Si QD synthesis by oxidation of magnesium silicide (Mg₂Si) with bromine (Br₂) was revisited.

Aerosol-Phase Synthesis and Processing of Luminescent Silicon Nanocrystals

Silicon quantum dots are attractive materials for luminescent devices and bioimaging applications. For these light-emitting applications, higher photoluminescence efficiency is desired in order to achieve better device performance. Nonthermal plasma synthesis successfully allows for the continuous production of silicon nanocrystals, but postprocessing is necessary to improve photoluminescence quantum yields so that nanocrystals can be used for luminescence applications. In this work, we demonstrate an all-aerosol-phase synthesis and processing route that integrates nonthermal plasma synthesis, plasma-assisted surface functionalization with alkene ligands, and in-flight annealing within one flow stream. Here, luminescent silicon nanocrystals are synthesized and postprocessed on a time scale of only 100 ms, which is orders of magnitude faster than previous synthesis and functionalization schemes. The as-produced silicon nanocrystals have photoluminescence quantum yields exceeding 20%, which is a 5-fold increase compared to previous silicon nanocrystals synthesized with all-aerosol-phase approaches. We attribute the enhanced photoluminescence to the reduced "dark" nanocrystal fraction due to reduction of dangling bond density and desorption of surface silyl species induced by the in-flight annealing. We also demonstrate that the ligand coverage plays a minor role for the photoluminescence properties, but that the nature of the silicon hydride surface groups is a major factor.

Locality of conical intersections in semiconductor nanomaterials

A predictive theory connecting atomic structure to the rate of recombination would enable the rational design of semiconductor nanomaterials for optoelectronic applications. Recently our group has demonstrated that the theoretical study of conical intersections can serve this purpose. Here we review recent work in this area, focusing on the thesis that low-energy conical intersections in nanomaterials share a common feature: locality. We define a conical intersection as local if (a) the intersecting states differ by the excitation of an electron between spatially local orbitals, and (b) the intersection is accessed when the energies of these orbitals are tuned by local distortions of the geometry. After illustrating the locality of the conical intersection responsible for recombination at dangling bond defects in silicon, we demonstrate the locality of low-energy conical intersections in cases where locality may be a surprise. First, we demonstrate the locality of low-energy self-trapped conical intersections in a pristine silicon nanocrystal, which has no defects that one would expect to serve as the center of a local intersection. Second, we demonstrate that the lowest energy intersection in a silicon system with two neighboring dangling bond defects localizes to a single defect site. We discuss the profound implications of locality for predicting the rate of recombination and suggest that the locality of intersections could be exploited in the experimental study of recombination, where spectroscopic studies of molecular models of defects could provide new insights.

Nitrogen-terminated silicon nanoparticles obtained via chemical etching and passivation are specific fluorescent probes for creatinine

A method is described here to prepare water-dispersible nitrogen-functionalized silicon nanoparticles (N-SiNPs). It consists of two steps, viz. etching of the oxidized shell of SiNPs and nitrogen-passivation of the exposed silicon. The resulting N-SiNPs have an average diameter of 2.6±0.7 nm and show blue fluorescence (with excitation/emission peaks at 340/420 nm). The fluorescence quantum yield is 23% and the decay time is in the nanosecond regime. Compared to etching methods using a plasma or hydrofluoric acid, the process described here (etching and passivation) is mild, continuous, fast, and air-compatible. The N-SiNPs modified with chlorotetracycline are shown to be a viable fluorescent probe for creatinine. Fluorescence drops in the 0 to 20 μM creatinine concentration range, and the limit of detection is 0.14 μM.

Pressure Induced Nanoparticle Phase Behavior, Property, and Applications

Nanoparticle (NP) high pressure behavior has been extensively studied over the years. In this review, we summarize recent progress on the studies of pressure induced NP phase behavior, property, and applications. This review starts with a brief overview of high pressure characterization techniques, coupled with synchrotron X-ray scattering, Raman, fluorescence, and absorption. Then, we survey the pressure induced phase transition of NP atomic crystal structure including size dependent phase transition, amorphization, and threshold pressures using several typical NP material systems as examples. Next, we discuss the pressure induced phase transition of NP mesoscale structures including topics on pressure induced interparticle separation distance, NP coupling, and NP coalescence. Pressure induced new properties and applications in different NP systems are highlighted. Finally, outlooks with future directions are discussed.

Biomimetic preparation of silicon quantum dots and their phytophysiology effect on cucumber seedlings

In this study, a biomimetic synthetic strategy was proposed for a facile preparation of red fluorescent silicon quantum dots (SiQDs) using unicellular algae of diatoms as reaction precursor.

Pressure-Induced Large Emission Enhancements of Cadmium Selenide Nanocrystals

Pressure quenching of optical emission largely limits the potential application of many materials in optical pressure-sensing devices, since emission intensity is crucially connected to performance. Boosting visible-light emission at high pressure is, therefore, an important goal. Here, we demonstrate that the emission of CdSe nanocrystals (NCs) can be enhanced by more than an order of magnitude by compression. The brightest emission can be achieved at pressures corresponding to the phase transitions in different sized CdSe NCs. Very bright blue emission can be obtained by exploiting the increase in band gap with increasing pressure. First-principles calculations indicate that the interaction between the capping oleic acid (OA) layer and the CdSe core is strengthened with increased Hirshfeld charge at high pressure. The effective surface reconstruction associated with the removal of surface-related trap states is highly responsible for the pressure-induced emission enhancement of these CdSe NCs. These findings pave the way for designing a stress nanogauge with easy optical readout and provide a route for tuning bright-fluorescence imaging in response to an externally applied pressure.

Nature of Hexagonal Silicon Forming via High-Pressure Synthesis: Nanostructured Hexagonal 4H Polytype

Hexagonal Si allotropes are expected to enhance light absorption in the visible range as compared to common cubic Si with diamond structure. Therefore, synthesis of these materials is crucial for the development of Si-based optoelectronics. In this work, we combine in situ high-pressure high-temperature synthesis and vacuum heating to obtain hexagonal Si. High pressure is one of the most promising routes to stabilize these allotropes. It allows one to obtain large-volume nanostructured ingots by a sequence of direct solid-solid transformations, ensuring high-purity samples for detailed characterization. Thanks to our synthesis approach, we provide the first evidence of a polycrystalline bulk sample of hexagonal Si. Exhaustive structural analysis, combining fine-powder X-ray and electron diffraction, afforded resolution of the crystal structure. We demonstrate that hexagonal Si obtained by high-pressure synthesis correspond to Si-4H polytype (ABCB stacking) in contrast with Si-2H (AB stacking) proposed previously. This result agrees with prior calculations that predicted a higher stability of the 4H form over 2H form. Further physical characterization, combining experimental data and ab initio calculations, have shown a good agreement with the established structure. Strong photoluminescence emission was observed in the visible region for which we foresee optimistic perspectives for the use of this material in Si-based photovoltaics.

Near-Ultraviolet to Near-Infrared Fluorescent Nitrogen-Doped Carbon Dots with Two-Photon and Piezochromic Luminescence

Carbon dots (CDs) have gained intensive interests owing to their unique structure and excellent optoelectronic performances. However, to acquire CDs with a broadband emission spectrum still remains an issue. In this work, nitrogen-doped CDs (N-CDs) with near-ultraviolet (NUV), visible, and near-infrared (NIR) emission were synthesized via one-pot solvothermal strategy, and the excitation-independent NUV and NIR emission and excitation-dependent visible emission were observed in the photoluminescence (PL) spectra of N-CDs. Moreover, the as-synthesized N-CDs displayed two-photon fluorescence emission. It is important to note that N-CDs also exhibited piezochromic luminescence with reversibility, in which the red- and blue-shifted PL with increasing applied pressure (0.07-5.18 GPa) and the red- and blue-shifted PL with releasing applied pressure (5.18 GPa to 1 atm) were developed for the first time. Combined with good hydrophilicity, high photobleaching resistance, and low toxicity, the piezochromic luminescence would greatly boost the valuable applications of N-CDs.

Long-lived luminescence of colloidal silicon quantum dots for time-gated fluorescence imaging in the second near infrared window in biological tissue

Boron (B) and phosphorus (P) codoped silicon quantum dots (Si QDs) are dispersible in polar solvents without organic ligands and exhibit photoluminescence (PL) in the first (NIR-I) and second (NIR-II) near infrared (NIR) windows in biological tissues due to the optical transition from the donor to acceptor states. We studied the relationship between the PL wavelength, lifetime and quantum yield (QY) of the colloidal solution and the composition of the starting material for the preparation. We found that the PL lifetime and the QY are primarily determined by the composition, while the PL wavelength is mainly determined by the growth temperature. By optimizing the composition, we achieved QYs of 20.1% and 1.74% in the NIR-I and NIR-II regions, respectively, in methanol. We demonstrate the application for time-gated imaging in the NIR-II range.

New Deformation-Induced Nanostructure in Silicon

Nanostructures in silicon (Si) induced by phase transformations have been investigated during the past 50 years. Performances of nanostructures are improved compared to that of bulk counterparts. Nevertheless, the confinement and loading conditions are insufficient to machine and fabricate high-performance devices. As a consequence, nanostructures fabricated by nanoscale deformation at loading speeds of m/s have not been demonstrated yet. In this study, grinding or scratching at a speed of 40.2 m/s was performed on a custom-made setup by an especially designed diamond tip (calculated stress under the diamond tip in the order of 5.11 GPa). This leads to a novel approach for the fabrication of nanostructures by nanoscale deformation at loading speeds of m/s. A new deformation-induced nanostructure was observed by transmission electron microscopy (TEM), consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal. The formation mechanism of the new phase was elucidated by ab initio simulations at shear stress of about 2.16 GPa. This approach opens a new route for the fabrication of nanostructures by nanoscale deformation at speeds of m/s. Our findings provide new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.

Abrupt Size Partitioning of Multimodal Photoluminescence Relaxation in Monodisperse Silicon Nanocrystals

Intrinsic constraints on efficient photoluminescence (PL) from smaller alkene-capped silicon nanocrystals (SiNCs) put limits on potential applications, but the root cause of such effects remains elusive. Here, plasma-synthesized colloidal SiNCs separated into monodisperse fractions reveal an abrupt size-dependent partitioning of multilevel PL relaxation, which we study as a function of temperature. Guided by theory and simulation, we explore the potential role of resonant phonon interactions with "minigaps" that emerge in the electronic density of states (DOS) under strong quantum confinement. Such higher-order structures can be very sensitive to SiNC surface chemistry, which we suggest might explain the common implication of surface effects in both the emergence of multimodal PL relaxation and the loss of quantum yield with decreasing nanocrystal size. Our results have potentially profound implications for optimizing the radiative recombination kinetics and quantum yield of smaller ligand-passivated SiNCs.

Long-lived luminescence of silicon nanocrystals: from principles to applications

Understanding parameters affecting the luminescence of silicon nanocrystals will guide the design of improved systems for a plethora of applications.

Origin of the Photoluminescence Quantum Yields Enhanced by Alkane-Termination of Freestanding Silicon Nanocrystals: Temperature-Dependence of Optical Properties

On the basis of the systematic study on temperature dependence of photoluminescence (PL) properties along with relaxation dynamics we revise a long-accepted mechanism for enhancing absolute PL quantum yields (QYs) of freestanding silicon nanocrystals (ncSi). A hydrogen-terminated ncSi (ncSi:H) of 2.1 nm was prepared by thermal disproportination of (HSiO_1.5)_n, followed by hydrofluoric etching. Room-temperature PL QY of the ncSi:H increased twentyfold only by hydrosilylation of 1-octadecene (ncSi-OD). A combination of PL spectroscopic measurement from cryogenic to room temperature with structural characterization allows us to link the enhanced PL QYs with the notable difference in surface structure between the ncSi:H and the ncSi-OD. The hydride-terminated surface suffers from the presence of a large amount of nonradiative relaxation channels whereas the passivation with alkyl monolayers suppresses the creation of the nonradiative relaxation channels to yield the high PL QY.

Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law

Silicon nanoparticles (NPs) have been widely accepted as an alternative material for typical quantum dots and commercial organic dyes in light-emitting and bioimaging applications owing to silicon's intrinsic merits of least toxicity, low cost, and high abundance. However, to date, how to improve Si nanoparticle photoluminescence (PL) performance (such as ultrahigh quantum yield, sharp emission peak, high stability) is still a major issue. Herein, we report surface nitrogen-capped Si NPs with PL quantum yield up to 90% and narrow PL bandwidth (full width at half-maximum (fwhm) ≈ 40 nm), which can compete with commercial dyes and typical quantum dots. Comprehensive studies have been conducted to unveil the influence of particle size, structure, and amount of surface ligand on the PL of Si NPs. Especially, a general ligand-structure-based PL energy law for surface nitrogen-capped Si NPs is identified in both experimental and theoretical analyses, and the underlying PL mechanisms are further discussed.

Si-nanocrystal-based nanofluids for nanothermometry

The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals

Size dependence of the boron (B) acceptor and phosphorus (P) donor levels of silicon (Si) nanocrystals (NCs) measured from the vacuum level was obtained in a very wide size range from 1 to 9 nm in diameter by photoemission yield spectroscopy and photoluminescence spectroscopy for B and P codoped Si-NCs. In relatively large Si-NCs, both levels are within the bulk Si band gap. The levels exhibited much smaller size dependence compared to the valence band and conduction band edges. The Fermi level of B and P codoped Si-NCs was also studied. It was found that the Fermi level of relatively large codoped Si-NCs is close to the valence band and it approaches the middle of the band gap with decreasing the size. The results suggest that below a certain size perfectly compensated Si-NCs, that is, Si-NCs with exactly the same number of active B and P, are preferentially grown, irrespective of average B and P concentrations in samples.

In situ rapid growth of fluorescent silicon nanoparticles at room temperature and under atmospheric pressure

Fluorescent and small-sized silicon nanoparticles (SiNPs) can be quickly created through in situ bottom-up growth under mild reaction conditions.

Determining the impact of hydrofluoric acid on surface states of as-prepared and chemically modified Si nanocrystals

The paper demonstrates an easy and cheap approach to chemical functionalization of silicon nanocrystal surface leading to enhancement of photoluminescence and electrical transport properties.

Tunability Limit of Photoluminescence in Colloidal Silicon Nanocrystals

Luminescent silicon nanocrystals (Si NCs) have attracted tremendous research interest. Their size dependent photoluminescence (PL) shows great promise in various optoelectronic and biomedical applications and devices. However, it remains unclear why the exciton emission is limited to energy below 2.1 eV, no matter how small the nanocrystal is. Here we interpret a nanosecond transient yellow emission band at 590 nm (2.1 eV) as a critical limit of the wavelength tunability in colloidal silicon nanocrystals. In the “large size” regime (d > ~3 nm), quantum confinement dominantly determines the PL wavelength and thus the PL peak blue shifts upon decreasing the Si NC size. In the “small size” regime (d < ~2 nm) the effect of the yellow band overwhelms the effect of quantum confinement with distinctly increased nonradiative trapping. As a consequence, the photoluminescence peak does not exhibit any additional blue shift and the quantum yield drops abruptly with further decreasing the size of the Si NCs. This finding confirms that the PL originating from the quantum confined core states can only exist in the red/near infrared with energy below 2.1 eV; while the blue/green PL originates from surface related states and exhibits nanosecond transition.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiO_x (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO₂ phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO₂. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Temperature and magnetic-field dependence of radiative decay in colloidal germanium quantum dots

We conduct spectroscopic and theoretical studies of photoluminescence (PL) from Ge quantum dots (QDs) fabricated via colloidal synthesis. The dynamics of late-time PL exhibit a pronounced dependence on temperature and applied magnetic field, which can be explained by radiative decay involving two closely spaced, slowly emitting exciton states. In 3.5 nm QDs, these states are separated by ∼1 meV and are characterized by ∼82 μs and ∼18 μs lifetimes. By using a four-band formalism, we calculate the fine structure of the indirect band-edge exciton arising from the electron-hole exchange interaction and the Coulomb interaction of the Γ-point hole with the anisotropic charge density of the L-point electron. The calculations suggest that the observed PL dynamics can be explained by phonon-assisted recombination of excitons thermally distributed between the lower-energy "dark" state with the momentum projection J = ± 2 and a higher energy "bright" state with J = ± 1. A fairly small difference between lifetimes of these states is due to their mixing induced by the exchange term unique to crystals with a highly symmetric cubic lattice such as Ge.

Self-induced uniaxial strain in MoS2 monolayers with local van der Waals-stacked interlayer interactions

Strain engineering is an effective method to tune the properties of electrons and phonons in semiconductor materials, including two-dimensional (2D) layered materials (e.g., MoS2 or graphene). External artificial stress (ExAS) or heterostructure stacking is generally required to induce strains for modulating semiconductor bandgaps and optoelectronic functions. For layered materials, the van der Waals-stacked interlayer interaction (vdW-SI) has been considered to dominate the interlayer stacking and intralayer bonding. Here, we demonstrate self-induced uniaxial strain in the MoS2 monolayer without the assistance of ExAS or heterostructure stacking processes. The uniaxial strain occurring in local monolayer regions is manifested by the Raman split of the in-plane vibration modes E2g(1) and is essentially caused by local vdW-SI within the single layer MoS2 due to a unique symmetric bilayer stacking. The local stacked configuration and the self-induced uniaxial strain may provide improved understanding of the fundamental interlayer interactions and alternative routes for strain engineering of layered structures.

Nanodiamonds and silicon quantum dots: ultrastable and biocompatible luminescent nanoprobes for long-term bioimaging

Ultra-stability and low-toxicity of silicon quantum dots and fluorescent nanodiamonds for long-termin vitroandin vivobioimaging are demonstrated.

One-step synthesis of fluorescent silicon quantum dots (Si-QDs) and their application for cell imaging

Novel fluorescent silicon quantum dots (Si-QDs) were synthesized by a one-step hydrothermal procedure using (3-aminopropyl)trimethoxysilane (APTES) as a silicon source and sodium ascorbate (SA) as a reducing agent.

Growth of novel boron-rich nanocrystals from oxygen-deficient borophosphosilicate glasses for boron neutron capture therapy

We develop a new type of boron-rich nanocrystals, which are dispersible in water and exhibit photoluminescence in the biological window, can be a multifunctional biomaterial used for imaging, diagnosis and boron neutron capture therapy.

Structural origin of light emission in germanium quantum dots

We used a combination of optically-detected x-ray absorption spectroscopy with molecular dynamics simulations to explore the origins of light emission in small (5 nm to 9 nm) Ge nanoparticles. Two sets of nanoparticles were studied, with oxygen and hydrogen terminated surfaces. We show that optically-detected x-ray absorption spectroscopy shows sufficient sensitivity to reveal the different origins of light emission in these two sets of samples. We found that in oxygen terminated nanoparticles its the oxide-rich regions that are responsible for the light emission. In hydrogen terminated nanoparticles we established that structurally disordered Ge regions contribute to the luminescence. Using a combination of molecular dynamics simulations and optically-detected x-ray absorption spectroscopy we show that these disordered regions correspond to the disordered layer a few Å thick at the surface of the simulated nanoparticle.

Silicon nanocrystals at elevated temperatures: retention of photoluminescence and diamond silicon to β-silicon carbide phase transition

We report the photoluminescence (PL) properties of colloidal Si nanocrystals (NCs) up to 800 K and observe PL retention on par with core/shell structures of other compositions. These alkane-terminated Si NCs even emit at temperatures well above previously reported melting points for oxide-embedded particles. Using selected area electron diffraction (SAED), powder X-ray diffraction (XRD), liquid drop theory, and molecular dynamics (MD) simulations, we show that melting does not play a role at the temperatures explored experimentally in PL, and we observe a phase change to β-SiC in the presence of an electron beam. Loss of diffraction peaks (melting) with recovery of diamond-phase silicon upon cooling is observed under inert atmosphere by XRD. We further show that surface passivation by covalently bound ligands endures the experimental temperatures. These findings point to covalently bound organic ligands as a route to the development of NCs for use in high temperature applications, including concentrated solar cells and electrical lighting.

Nonlinear effects of nanoparticles: biological variability from hormetic doses, small particle sizes, and dynamic adaptive interactions

Researchers are increasingly focused on the nanoscale level of organization where biological processes take place in living systems. Nanoparticles (NPs, e.g., 1-100 nm diameter) are small forms of natural or manufactured source material whose properties differ markedly from those of the respective bulk forms of the "same" material. Certain NPs have diagnostic and therapeutic uses; some NPs exhibit low-dose toxicity; other NPs show ability to stimulate low-dose adaptive responses (hormesis). Beyond dose, size, shape, and surface charge variations of NPs evoke nonlinear responses in complex adaptive systems. NPs acquire unique size-dependent biological, chemical, thermal, optical, electromagnetic, and atom-like quantum properties. Nanoparticles exhibit high surface adsorptive capacity for other substances, enhanced bioavailability, and ability to cross otherwise impermeable cell membranes including the blood-brain barrier. With super-potent effects, nano-forms can evoke cellular stress responses or therapeutic effects not only at lower doses than their bulk forms, but also for longer periods of time. Interactions of initial effects and compensatory systemic responses can alter the impact of NPs over time. Taken together, the data suggest the need to downshift the dose-response curve of NPs from that for bulk forms in order to identify the necessarily decreased no-observed-adverse-effect-level and hormetic dose range for nanoparticles.

Silicon quantum dots: surface matters

Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.

A complex study of the fast blue luminescence of oxidized silicon nanocrystals: the role of the core

Silicon nanocrystals (SiNCs) smaller than 5 nm are a material with strong visible photoluminescence (PL). However, the physical origin of the PL, which, in the case of oxide-passivated SiNCs, is typically composed of a slow-decaying red-orange band (S-band) and of a fast-decaying blue-green band (F-band), is still not fully understood. Here we present a physical interpretation of the F-band origin based on the results of an experimental study, in which we combine temperature (4-296 K), temporally (picosecond resolution) and spectrally resolved luminescence spectroscopy of free-standing oxide-passivated SiNCs. Our complex study shows that the F-band red-shifts only by 35 meV with increasing temperature, which is almost 6 times less than the red-shift of the S-band in a similar temperature range. In addition, the F-band characteristic decay time obtained from a stretched-exponential fit decreases only slightly with increasing temperature. These data strongly suggest that the F-band arises from the core-related quasi-direct radiative recombination governed by slowly thermalizing photoholes.

Tailoring the optical gap of silicon quantum dots without changing their size

The optical gap of silicon quantum dots can be tailored, independent of their size, via direct generation of spatially separated excitons.

Temperature dependent photoluminescence of size-purified silicon nanocrystals

The photoluminescence (PL) of size-purified silicon nanocrystals is measured as a function of temperature and nanoparticle size for pure nanocrystal films and polydimethylsiloxane (PDMS) nanocomposites. The temperature dependence of the bandgap is the same for both sample types, being measurably different from that of bulk silicon because of quantum confinement. Our results also suggest weaker interparticle and environmental coupling in the nanocomposites, with enhanced PL and an unexpected dependence of lifetime on size for the pure nanocrystal films at low temperatures. We interpret these results through differences in the low-temperature size dependence of the ensemble nonradiative equilibrium constants. The response of the PDMS nanocomposites provides a consistent measure of local temperature through intensity, lifetime, and wavelength in a polymer-dispersed morphology suitable for biomedical applications, and we exploit this to fabricate a small-footprint fiber-optic cryothermometer. A comparison of the two sample types offers fundamental insight into the photoluminescent behavior of silicon nanocrystal ensembles.