Buckled silicene formation on Ir(111)

Two-dimensional silicene-based technologies in oncology: an emerging avenue

Silicene, a two-dimensional allotrope of silicon, has attracted considerable attention due to its distinctive electronic, mechanical, and biochemical properties. This review critically examines the emerging applications of silicene in oncology, emphasising its potential roles in cancer therapy and research. Silicene exhibits exceptional biocompatibility and surface reactivity, positioning it as a promising candidate for oncological applications. This review addresses the current challenges and limitations in the clinical translation of silicene-based technologies, including issues of stability, toxicity, and scalable production. By synthesizing recent research findings, this review aims to provide an assessment of silicene's potential contributions to oncology and delineate future research trajectories in this innovative field.

Combination of silicene and boronene as a potential anode material for high-performance lithium-ion batteries: Insights from first principles

Material design is essential for the development and preparation of new materials. In this paper, a new two-dimensional heterostructure material (B@Si) consisting of boronene and silicene is designed and used as an anode material for lithium-ion batteries in order to improve the performance of lithium-ion batteries, and the structural properties, stability, electronic properties, and performance as an anode material for lithium-ion batteries are systematically investigated by first-principle calculations of the B@Si heterostructure. The results show that the B@Si heterostructure is energetically, thermodynamically and dynamically stable, and although the Dirac cone in the energy band structure of silicene disappears after the formation of the heterojunction, the overall electrical conductivity of the material improves considerably and the electron transport rate is faster. Due to the synergistic effect, Li has more stable adsorption sites and lower diffusion barriers than boronene and silicene in the B@Si heterostructure, higher theoretical specific capacity (1208 mAhg-1), and stronger mechanical properties (C11 = 296.6 N/m, C22 = 142.8 N/m). The volume expansion in the fully lithiated state is also only 8 %. These advantages indicate that B@Si heterostructures are good potential anode materials for high-performance Li-ion batteries.

Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Silicene, a single layer of Si atoms, shares many remarkable electronic properties with graphene. So far, silicene has been synthesized in its epitaxial form on a few surfaces of solids. Thus, the problem of silicene-substrate interaction appears, which usually depresses the original electronic behavior but may trigger properties superior to those of bare components. We report the direct observation of robust Dirac-dispersed bands in epitaxial silicene grown on Au(111) films deposited on Si(111). By performing in-depth angle-resolved photoemission spectroscopy measurements, we reveal three pairs of one-dimensional bands with linear dispersion running in three different directions of an otherwise two-dimensional system. By combining these results with first-principles calculations, we explore the nature of these bands and point to strong interaction between subsystems forming a complex Si-Au heterostructure. These findings emphasize the essential role of interfacial coupling and open a unique materials platform for exploring exotic quantum phenomena and applications in future-generation nanoelectronics.

Silicene growth mechanisms on Au(111) and Au(110) substrates

Despite the remarkable theoretical applications of silicene, its synthesis remains a complex task, with epitaxial growth being one of the main routes involving depositing evaporated Si atoms onto a suitable substrate. Additionally, the requirement for a substrate to maintain the silicene stability poses several difficulties in accurately determining the growth mechanisms and the resulting structures, leading to conflicting results in the literature. In this study, large-scale molecular dynamics simulations are performed to uncover the growth mechanisms and characteristics of epitaxially grown silicene sheets on Au(111) and Au(110) substrates, considering different temperatures and Si deposition rates. The growth process has been found to initiate with the nucleation of several independent islands homogeneously distributed on the substrate surface, which gradually merge to form a complete silicene sheet. The results consistently demonstrate the presence of a buckled silicene structure, although this characteristic is notably reduced when using an Au(111) substrate. Furthermore, the analysis also focuses on the quality and growth mode of the silicene sheets, considering the influence of temperature and deposition rate. The findings reveal a prevalence of the Frank-van der Merwe growth mode, along with diverse forms of defects throughout the sheets.

Anomalous intralayer growth of epitaxial Si on Ag(111)

The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard [Formula: see text] shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.

Achieving controllable multifunctionality through layer sliding

Dynamical variation of physical properties in a controllable fashion provides exciting possibilities to obtain multifunctional materials. In this work, layer-sliding is employed to modify the structural, interfacial electronic and optical properties of unintercalated and Mg-intercalated two-dimensional (2D) van der Waals heterostructure (vdW-HS) consisting of buckled silicene and hexagonal boron nitride (hBN). The most stable stacking configuration of silicene over hBN is screened out and then intercalated with Mg at the interface. Dynamical-dependent changes in the properties of vdW-HS are performed by sliding silicene over hBN monolayer in the absence and presence of the intercalant. Layer-sliding is carried out in equal length intervals, and various parametric quantities related to the physical characteristics of the vdW-HS are repeatedly calculated and compared. Apart from various parametric quantities, stability of unintercalated and Mg-intercalated vdW-HS is also checked by means of relative total energies, binding energies and vdW gaps along the sliding pathway. Comparison of binding energies shows that the un-slided, half-slided, and fully-slided Mg-intercalated vdW-HS are 1.52, 1.44 and 1.42 eV more stable than the unintercalated vdW-HS. Opening of a small band gap of 12, 31 and 28 meV for un-slided, half-slided and fully-slided unintercalated vdW-HS, respectively, is worth mentioning. To study the interfacial electronic behavior, planar average charge density difference (Δρ) and charge transfer (ΔQ) are also calculated and varied via layer-sliding. Further, we calculated diverse optical spectra such as the complex dielectric function (DF), electron energy loss function [L(ω)], diagonal components of dielectric tensor [ε(iω)], refractive index [n(ω)], extinction coefficient [k(ω)], absorption coefficient [α(ω)], and reflectivity [R(ω)] for un-slided, half-slided and fully-slided unintercalated and Mg-intercalated vdW-HS. Interestingly, the polarization and energy losses have been reduced in the case of Mg-intercalated vdW-HS. The suggested layer-sliding method can be established as a general scheme for bringing multifunctionality into a layered material.

Two-Dimensional Transition Metal Boride TMB12 (TM = V, Cr, Mn, and Fe) Monolayers: Robust Antiferromagnetic Semiconductors with Large Magnetic Anisotropy

Currently, two-dimensional (2D) materials with intrinsic antiferromagnetism have stimulated research interest due to their insensitivity to external magnetic fields and absence of stray fields. Here, we predict a family of stable transition metal (TM) borides, TMB12 (TM = V, Cr, Mn, Fe) monolayers, by combining TM atoms and B12 icosahedra based on first-principles calculations. Our results show that the four TMB12 monolayers have stable antiferromagnetic (AFM) ground states with large magnetic anisotropic energy. Among them, three TMB12 (TM=V, Cr, Mn) monolayers display an in-plane easy magnetization axis, while the FeB12 monolayer has an out-of-plane easy magnetization axis. Among them, the CrB12 and the FeB12 monolayers are AFM semiconductors with band gaps of 0.13 eV and 0.35 eV, respectively. In particular, the AFM FeB12 monolayer is a spin-polarized AFM material with a Néel temperature of 125 K. Moreover, the electronic and magnetic properties of the CrB12 and the FeB12 monolayers can be modulated by imposing external biaxial strains. Our findings show that the TMB12 monolayers are candidates for designing 2D AFM materials, with potential applications in electronic devices.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Graphene-like emerging 2D materials: recent progress, challenges and future outlook

Owing to the unique physical and chemical properties of 2D materials and the great success of graphene in various applications, the scientific community has been influenced to explore a new class of graphene-like 2D materials for next-generation technological applications. Consequently, many alternative layered and non-layered 2D materials, including h-BN, TMDs, and MXenes, have been synthesized recently for applications related to the 4th industrial revolution. In this review, recent progress in state-of-the-art research on 2D materials, including their synthesis routes, characterization and application-oriented properties, has been highlighted. The evolving applications of 2D materials in the areas of electronics, optoelectronics, spintronic devices, sensors, high-performance and transparent electrodes, energy conversion and storage, electromagnetic interference shielding, hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and nanocomposites are discussed. In particular, the state-of-the-art applications, challenges, and outlook of every class of 2D material are also presented as concluding remarks to guide this fast-progressing class of 2D materials beyond graphene for scientific research into next-generation materials.

Motion of nanovehicles on pristine and vacancy-defected silicene: implications for controlled surface motion

Understanding the motion of surface-rolling nanomachines has attracted lots of attention in recent studies, due to their ability in carrying molecular payloads and nanomaterials on the surface. Controlling the surface motion of these nanovehicles is beneficial in the fabrication of nano-transportation systems. In the present study, molecular dynamics (MD) simulations alongside the potential energy analysis have been utilized to investigate the motion of C60 and C60-based nanovehicles on the silicene monolayer. Nano-machine simulations are performed using molecular mechanic forcefield. Compared with graphene and hexagonal boron-nitride, the molecules experience a higher energy barrier on the silicene, which leads to a lower diffusion coefficient and higher activation energy of C60 and nanomachines. Overcoming the maximum energy barrier against sliding motion is more probable at higher temperatures where the nanomachines receive higher thermal energy. After evaluating the motion of molecules around local vacancies, we introduce a nanoroad structure that can restrict surface motion. The motion of C60 and nanovehicles over the surface is limited to the width of nanorods up to a certain temperature. To increase the controllability of the motion, a thermal gradient has been applied to the surface and the molecules move toward the lower temperature regions, where they find lower energy levels. Comparing the results of this study with other investigations regarding the surface motion of molecules on boron-nitride and graphene surfaces brings forth the idea of controlling the motion by silicene-based hybrid substrates, which can be further investigated.

Exceptional ultrafast nonlinear optical response of functionalized silicon nanosheets

The present work reports on the ultrafast saturable absorption (SA), optical limiting (OL), and the nonlinear refractive response of hydride-terminated silicon nanosheets (SiNS-H) differently functionalized with styrene and tert-butyl methacrylate (tBuMA), namely, SiNS-styrene and SiNS-tBuMA, using 50 fs, 400 nm and 70 fs, 800 nm laser pulses. SiNS-styrene and SiNS-tBuMA exhibit dramatically enhanced nonlinear optical (NLO) responses compared to SiNS-H, with their absorptive nonlinearity strongly dependent on the laser excitation wavelength. More specifically, the studied functionalized SiNSs reveal strong SA behavior under 400 nm laser excitation, with NLO absorption coefficients, saturable intensities, and modulation depths comparable to various two-dimensional (2D) materials, known to exhibit strong SA, such as graphene, black phosphorous (BP), some transition metal dichalcogenides (TMDs), and some MXenes. On the other hand, under 800 nm laser excitation, SiNS-styrene and SiNS-tBuMA show highly efficient OL performance with OL onset values of about 0.0045 and 0.0065 J cm-2, respectively, which are significantly lower than those of other 2D nanostructures. In addition, it is shown that both SiNS samples have great potential in already existing Si-based optoelectronic devices for optical-switching applications since they exhibit very strong NLO refraction comparable to that of bulk Si. The results of the present work demonstrate that the chemical functionalization of SiNSs provides a highly efficient strategy for the preparation of 2D Si-based nanostructures with enhanced NLO response in view of several optoelectronic and photonic applications, such as OL, SA, and all-optical switching.

Two-Dimensional Pb Square Nets from Bulk (RO)nPb (R = Rare Earth Metals, n = 1,2)

All two-dimensional (2D) materials of group IV elements from Si to Pb are stabilized by carrier doping and interface bonding from substrates except graphene which can be free-standing. The involvement of strong hybrid of bonds, adsorption of exotic atomic species, and the high concentration of crystalline defects are often unavoidable, complicating the measurement of the intrinsic properties. In this work, we report the discovery of seven kinds of hitherto unreported bulk compounds (RO)nPb (R = rare earth metals, n = 1,2), which consist of quasi-2D Pb square nets that are spatially and electronically detached from the [RO]δ+ blocking layers. The band structures of these compounds near Fermi levels are relatively clean and dominantly contributed by Pb, resembling the electron-doped free-standing Pb monolayer. The R2O2Pb compounds are metallic at ambient pressure and become superconductors under high pressures with much enhanced critical fields. In particular, Gd2O2Pb (9.1 μB/Gd) exhibits an interesting bulk response of lattice distortion in conjunction with the emergence of superconductivity and magnetic anomalies at a critical pressure of 10 GPa. Our findings reveal the unexpected facets of 2D Pb sheets that are considerably different from their bulk counterparts and provide an alternative route for exploring 2D properties in bulk materials.

Epitaxial growth and structural properties of silicene and other 2D allotropes of Si

Since the breakthrough of graphene, considerable efforts have been made to search for two-dimensional (2D) materials composed of other group 14 elements, in particular silicon and germanium, due to their valence electronic configuration similar to that of carbon and their widespread use in the semiconductor industry. Silicene, the silicon counterpart of graphene, has been particularly studied, both theoretically and experimentally. Theoretical studies were the first to predict a low-buckled honeycomb structure for free-standing silicene possessing most of the outstanding electronic properties of graphene. From an experimental point of view, as no layered structure analogous to graphite exists for silicon, the synthesis of silicene requires the development of alternative methods to exfoliation. Epitaxial growth of silicon on various substrates has been widely exploited in attempts to form 2D Si honeycomb structures. In this article, we provide a comprehensive state-of-the-art review focusing on the different epitaxial systems reported in the literature, some of which having generated controversy and long debates. In the search for the synthesis of 2D Si honeycomb structures, other 2D allotropes of Si have been discovered and will also be presented in this review. Finally, with a view to applications, we discuss the reactivity and air-stability of silicene as well as the strategy devised to decouple epitaxial silicene from the underlying surface and its transfer to a target substrate.

Recent progress in emergent two-dimensional silicene

Although graphene is by far the most famous example of two-dimensional (2D) materials, which exhibits a wealth of exotic and intriguing properties, it suffers from a severe drawback. In this regard, the exploration of silicene, the silicon analog of the graphene material, has attracted substantial interest in the past decade. This review therefore provides a comprehensive survey of recent theoretical and experimental works on this 2D material. We first overview the distinctive structures and properties of silicene, including mechanical, electronic, and spintronic properties. We then discuss the growth and experimental characterization of silicene on Ag(111) and other different substrates, providing insights into the different phases or atomic arrangements of silicene observed on the metallic surfaces as well as on its electronic structures. Then, the recent state-of-the-art applications of silicene are summarized in section 4 with the aim to break the scientific and engineering barriers for application in nanoelectronics, sensors, energy storage devices, electrode materials, and quantum technology. Finally, the concluding remarks and the future prospects of silicene are also provided.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

Computational Modeling of Doped 2D Anode Materials for Lithium-Ion Batteries

Development of high-performance lithium-ion batteries (LIBs) is boosted by the needs of the modern automotive industry and the wide expansion of all kinds of electronic devices. First of all, improvements should be associated with an increase in the specific capacity and charging rate as well as the cyclic stability of electrode materials. The complexity of experimental anode material selection is now the main limiting factor in improving LIB performance. Computer selection of anode materials based on first-principles and classical molecular dynamics modeling can be considered as the main paths to success. However, even combined anodes cannot always provide high LIB characteristics and it is necessary to resort to their alloying. Transmutation neutron doping (NTD) is the most appropriate way to improve the properties of thin film silicon anodes. In this review, the effectiveness of the NTD procedure for silicene/graphite (nickel) anodes is shown. With moderate P doping (up to 6%), the increase in the capacity of a silicene channel on a Ni substrate can be 15-20%, while maintaining the safety margin of silicene during cycling. This review can serve as a starting point for meaningful selection and optimization of the performance of anode materials.

Recent Advances in Surface Modifications of Elemental Two-Dimensional Materials: Structures, Properties, and Applications

The advent of graphene opens up the research into two-dimensional (2D) materials, which are considered revolutionary materials. Due to its unique geometric structure, graphene exhibits a series of exotic physical and chemical properties. In addition, single-element-based 2D materials (Xenes) have garnered tremendous interest. At present, 16 kinds of Xenes (silicene, borophene, germanene, phosphorene, tellurene, etc.) have been explored, mainly distributed in the third, fourth, fifth, and sixth main groups. The current methods to prepare monolayers or few-layer 2D materials include epitaxy growth, mechanical exfoliation, and liquid phase exfoliation. Although two Xenes (aluminene and indiene) have not been synthesized due to the limitations of synthetic methods and the stability of Xenes, other Xenes have been successfully created via elaborate artificial design and synthesis. Focusing on elemental 2D materials, this review mainly summarizes the recently reported work about tuning the electronic, optical, mechanical, and chemical properties of Xenes via surface modifications, achieved using controllable approaches (doping, adsorption, strain, intercalation, phase transition, etc.) to broaden their applications in various fields, including spintronics, electronics, optoelectronics, superconducting, photovoltaics, sensors, catalysis, and biomedicines. These advances in the surface modification of Xenes have laid a theoretical and experimental foundation for the development of 2D materials and their practical applications in diverse fields.

Anomalous dewetting growth of Si on Ag(111)

We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.

Several semiconducting two-dimensional silicon nanosheets assembled from zigzag silicene nanoribbons

Semiconducting two-dimensional intrinsic silicon nanosheets are ideal materials for many applications in modern industry, since they are the only ones that can match well with previous silicon components. However, such materials are still lacking, especially those with moderate band gaps. In this work, by using first-principles theory, a series of two-dimensional intrinsic silicon nanosheets are assembled from zigzag silicene nanoribbons with different widths. The result shows that all the nanosheets behave as semiconductors, although some of them possess small band gaps of dozens of meV. Two of them, individually assembled from the two narrowest zigzag silicene nanoribbons, possess the largest indirect band gaps of 0.20 and 0.26 eV, respectively. Under low compressive strain, these two nanosheets would turn into quasi-direct or direct band gap semiconductors, and the gaps increase up to 0.62 or 0.54 eV, respectively. Due to the electron transfer from three-fold to four-fold coordinated Si atoms, the charge carriers prefer to transport along the zigzag direction, and electrons and holes transport in the respective Si chains. Interestingly, the investigation of Poisson's ratio reveals that the assembled silicon nanosheets have a negative Poisson's ratio in certain strain ranges if the width n of zigzag silicene nanoribbons is even. This work provides a new approach to design semiconducting silicon nanosheets and benefits to the applications of two-dimensional silicon nanosheets in many electronic and mechanical fields.

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

The search for connections between electronic and structural features is a key factor in the synthesis of artificial materials for on-demand applications, with graphene and analogous elemental semimetals playing a distinguished role as building blocks of photonic and plasmonic systems. In particular, a diversity of arrangements and electronic-state dispersions is offered by currently synthesized two-dimensional allotropes of silicon and germanium, respectively known as silicene and germanene. These monolayers make the ideal playground to understand how their collective and single-particle electronic states, excited by electron or light beams, may be controlled by geometry rather than doping or gating. Here, we provide such a study using time-dependent density-functional theory, in the random-phase approximation, to identify the structural dependent properties of charge-density plasmon oscillations and optical absorption in flat to buckled silicene and germanene lattices. We further single out flat germanene as an unprecedented two-dimensional conductor, hosting Dirac cone fermions in parallel with metal-like charge carriers, which contribute to strong intraband plasmon modes and one-electron excitations in the far-infrared limit. Finally, we show how this atypical scenario can be tuned by external stress or strain.

Experimental Realization of Atomic Monolayer Si9 C15

Monolayer Si_x C_y constitutes an important family of 2D materials that is predicted to feature a honeycomb structure and appreciable bandgaps. However, due to its binary chemical nature and the lack of bulk polymorphs with a layered structure, the fabrication of such materials has so far been challenging. Here, the synthesis of atomic monolayer Si₉ C₁₅ on Ru (0001) and Rh(111) substrates is reported. A combination of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and density functional theory (DFT) calculations is used to infer that the 2D lattice of Si₉ C₁₅ is a buckled honeycomb structure. Monolayer Si₉ C₁₅ shows semiconducting behavior with a bandgap of ≈1.9 eV. Remarkably, the Si₉ C₁₅ lattice remains intact after exposure to ambient conditions, indicating good air stability. The present work expands the 2D-materials library and provides a promising platform for future studies in nanoelectronics and nanophotonics.

On the interface between biomaterials and two-dimensional materials for biomedical applications

Two-dimensional (2D) materials have garnered significant attention due to their ultrathin 2D structures with a high degree of anisotropy and functionality. Reliable manipulation of interfaces between 2D materials and biomaterials is a new frontier for biomedical nanoscience and combining biomaterials with 2D materials offers a promising way to fabricate innovative 2D biomaterials composites with distinct functionality for biomedical applications. Here, we focus exclusively on a summary of the current work in the interface investigation of 2D biomaterials. Specifically, we highlight extraordinary features that make 2D materials so desirable, as well as the molecular level interactions between 2D materials and biomaterials that have been studied thus far. Furthermore, the approaches for investigating the interface characteristics of 2D biomaterials are presented and described in depth. To capture the emerging trend in mass manufacturing of 2D materials, we review the research progress on biomaterial-assisted exfoliation. Finally, we present a critical assessment of newly developed 2D biomaterials in biomedical applications.

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis

Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.

Two-layer silicene on the SiC substrate: lithiation investigation in the molecular dynamics experiment

The functioning of the lithium ion battery anode composed of silicene/SiC composite is studied by the method of molecular dynamics. In this composite, silicene has vacancy defects of different sizes. Approximately the same degree of filling of such an anode with lithium is shown for both horizontal and vertical intercalations. However, during the horizontal intercalation as opposed to vertical one, lithium atoms not only fill the channel and deposit on its walls, but also penetrate into the substrate. In both cases, the self-diffusion coefficients of lithium atoms have similar values. However, the process of filling the system with lithium occurs with a smoother change in the total energy, when the intercalation is performed vertically. A detailed study of the lithium atoms packing via the construction of Voronoi polyhedra for each of the systems under consideration shows the better uniformity of the Li atoms distribution over the volume of the system during the vertical intercalation.

Electronic Properties and Structure of Silicene on Cu and Ni Substrates

Silicene, together with copper or nickel, is the main component of electrodes for solar cells, lithium-ion batteries (LIB) and new-generation supercapacitors. The aim of this work was to study the electronic properties and geometric structure of “silicene–Ni” and “silicene–Cu” systems intended for use as LIB electrodes. The densities of electronic states, band structures, adhesion energies and interatomic distances in the silicene–(Cu, Ni) systems were determined by ab initio calculations. Silicene on a copper substrate exhibited temperature stability in the temperature range from 200 to 800 K, while on a nickel substrate, the structure of silicene was rearranged. Adsorption energies and bond lengths in the “silicene–Cu” system were calculated in the range of Li/Si ratios from 0.125 to 0.5. The formation of the Li₂ isomer during the adsorption of lithium in a ratio to silicon of 0.375 and 0.5 was observed. Silicene was found to remain stable when placed on a copper substrate coated with a single layer of nickel. The charge redistribution caused by the addition of a nickel intermediate layer between silicene and a copper substrate was studied.

Hundred-gram scale fabrication of few-layered silicene by a continuous vapor-dealloying strategy for high-performance lithium storage

A continuous vapor de-alloying strategy for a hundred-gram scale fabrication of silicene is developed by etching CaSi₂ using waste polyvinyl chloride (PVC). The as-obtained few-layered silicene can be readily assembled with carbon nanotubes into flexible electrodes for lithium storage with excellent performance, which stably deliver a high capacity and stability. This strategy can be extended to other silicon analogs with various structures by selecting precursors such as Mg₂Si and Al/Si alloy.

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm^-1, very close to the theoretical value of 570 cm^-1 calculated for free-standing silicene. This vibrational mode at 560 cm^-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.

Charged lithium adsorption on pristine and defective silicene: a theoretical study

We investigated by first principle calculations the adsorption of Li^q(q= -1, 0 or +1) on a silicene single layer. Pristine and three different defective silicene configurations with and without Li doping were studied: single vacancy (SV), double vacancy (DV) and Stone-Wales (STW). Structural studies and the adsorption energies of various sites were obtained and compared in order to understand the stability of the Li on the surface. Moreover, electronic structure and charge density difference analysis were performed before and after adsorption at the most stables sites, which showed the presence of a magnetic moment in the undoped SV system, the displacement of the Fermi level produced by Li doping and a charge transfer from Li to the surface. Additionally, quantum capacity (QC) and charge density studies were performed on these systems. This analysis showed that the generation of defects and doping improves the QC of silicene in positive bias, because of the existence of 3p orbital in the zone of the defect. Consequently, the innovative calculations performed in this work of charged lithium doping on silicene can be used for future comparison with experimental studies of this Li-ion battery anode material candidate.

Tunable Dirac states in doped B2S3 monolayers

Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B₂S₃ monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m^-1, indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B₂S₃ monolayer show that some Dirac points appear but do not occur exactly on the Fermi level (E_F). Fortunately, we find that the Dirac cone can be tuned to the E_F by doping C, N, or Sn atoms. The C-doped B₂S₃ monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B₂S₃ monolayers, the typical kagome bands are formed near the E_F, which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B₂S₃ monolayers promising 2D Dirac materials for future nanoelectronic devices.

Valleytronics in two-dimensional materials with line defect

The concept of valley originates from two degenerate but nonequivalent energy bands at the local minimum in the conduction band or local maximum in the valence band. Manipulating the valley states for information storage and processing develops a brand-new electronics-valleytronics. Broken inversion symmetry is a necessary condition to produce pure valley currents. The polycrystalline two-dimensional materials (graphene, silicene, monolayer group-VI transition metal dichalcogenides, etc) with pristine grains stitched together by disordered grain boundaries (GBs) are the natural inversion-symmetry-broken systems and the candidates in the field of valleytronics. Different from their pristine forms, the Dirac valleys on both sides of GBs are mismatched in the momentum space and induce peculiar valley transport properties across the GBs. In this review, we systematically demonstrate the fundamental properties of valley degree of freedom across mostly studied and experimentally feasible polycrystalline structure-the line defect, and the manipulation strategies with electrical, magnetic and mechanical methods to realize the valley polarization. We also introduce an effective numerical method, the non-equilibrium Green's function technique, to tackle the valley transport issues in the line defect systems. The present challenges and the perspective on the further investigations of the line defect in valleytronics are also summarized.

Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies

Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS₂/WSe₂). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1s→π* and 1s→σ* according to their intensity dependence on α, attesting to the sp²-like hybridization of the silicon valence orbitals in both thin and thick Si films. The synthesis of a silicon allotrope on the α-phase of Si(111)√3 × √3R30°-Bi substrate was demonstrated by LEED patterns and GIXRD that discloses the presence of a Si stack of 3.099 (3) Å and a √3 × √3 unit cell of 6.474 Å, typically seen for multilayer silicene. STM and STS measurements corroborated the findings. These measurements provided a platform for the new √3 × √3R30° Si allotrope on a Si(111)√3 × √3 R30°-Bi template, paving the way for realizing topological insulator heterostructures from different two-dimensional materials, Bi and Si.

Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films-LEEM and LEED Studies

The formation and evolution of silicene on ultrathin Au films have been investigated with low energy electron microscopy and diffraction. Careful control of the annealing rate and temperature of Au films epitaxially grown on the Si(111) surface allows for the preparation of a large scale, of the order of cm², silicene sheets. Depending on the final temperature, three stages of silicene evolution can be distinguished: (i) the growth of the low buckled phase, (ii) the formation of a layered heterostructure of the low buckled and planar phases of silicene and (iii) the gradual destruction of the silicene. Each stage is characterized by its unique surface morphology and characteristic diffraction patterns. The present study gives an overview of structures formed on the surface of ultrathin Au films and morphology changes between room temperature and the temperature at which the formation of Au droplets on the Si(111) surface occurs.

First-principles study of point defects in U3Si2: effects on the mechanical and electronic properties

In recent years, U₃Si₂ has been proposed as an alternative nuclear fuel material to uranium dioxide (UO₂) because of its intrinsically high uranium density and thermal conductivity. However, the operation environment in the nuclear reactor is complex and extreme, such as in-pile neutron irradiation, and thus it is necessary to explore the radiation response behavior of U₃Si₂ and the physical properties of its damaged states. In the present study, first-principles calculations based on density functional theory were carried out to investigate the mechanical and electronic properties of defective U₃Si₂. Our results showed that the defect stability in U₃Si₂, except its interstitial defects, is dependent on its chemical environment. When vacancy, antisite or interstitial defects are introduced into U₃Si₂, its elastic modulus are decreased and its ductility is enhanced. Although the presence of defects in U₃Si₂ does not change its metallic nature and the electron distribution in its Fermi level, their effect on the partial chemical bonding interaction is significant. This study suggests that under a radiation environment, the created defects in U₃Si₂ remarkably affect its mechanical and electronic properties.

The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection

The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.

Chemi-Inspired Silicon Allotropes-Experimentally Accessible Si9 Cages as Proposed Building Block for 1D Polymers, 2D Sheets, Single-Walled Nanotubes, and Nanoparticles

Numerous studies on silicon allotropes with three-dimensional networks or as materials of lower dimensionality have been carried out in the past. Herein, allotropes of silicon, which are based on structures of experimentally accessible [Si9]4- clusters known as stable anionic molecular species in neat solids and in solution, are predicted. Hypothetical oxidative coupling under the formation of covalent Si-Si bonds between the clusters leads to uncharged two-, one- and zero-dimensional silicon nanomaterials not suffering from dangling bonds. A large variety of structures are derived and investigated by quantum chemical calculations. Their relative energies are in the same range as experimentally known silicene, and some structures are even energetically more favorable than silicene. Significantly smaller relative energies are reached by the insertion of linkers in form of tetrahedrally connected Si atoms. A chessboard pattern built of Si9 clusters bridged by tetrahedrally connected Si atoms represents a two-dimensional silicon species with remarkably lower relative energy in comparison with silicene. We discuss the structural and electronic properties of the predicted silicon materials and their building block nido-[Si9]4- based on density functional calculations. All considered structures are semiconductors. The band structures exclusively show bands of low dispersion, as is typical for covalent polymers.

Silicon Nanosheets: An Emerging 2D Photonic Material with a Large Transient Nonlinear Optical Response beyond Graphene

The present work reports on the transient nonlinear optical (NLO) responses of two different types of 2D silicon nanosheets (SiNSs), namely hydride-terminated silicon nanosheets (SiNS-H) and 1-dodecene-functionalized silicon nanosheets (SiNS-dodecene). The main motivation of this study was to extend the knowledge regarding the NLO properties of these Si-based materials, for which very few published studies exist so far. For that purpose, the NLO responses of SiNS-H and SiNS-dodecene were investigated experimentally in the nanosecond regime at 532 and 1064 nm using the Z-scan technique, while the obtained results were compared to those of certain recently studied graphene nanosheets. SiNS-dodecene was found to exhibit the largest third-order susceptibility χ(3) values at both excitation wavelengths, most probably ascribed to the presence of point defects, indicating the importance of chemical functionalization for the efficient enhancement and tailoring of the NLO properties of these emerging 2D Si-based materials. Most importantly, the results demonstrated that the present silicon nanosheets revealed comparable and even larger NLO responses than graphene nanosheets. Undoubtedly, SiNSs could be strong competitors of graphene for applications in 2D-material-based photonics and optoelectronics.

Magnetism in Au-Supported Planar Silicene

The adsorption and substitution of transition metal atoms (Fe and Co) on Au-supported planar silicene have been studied by means of first-principles density functional theory calculations. The structural, energetic and magnetic properties have been analyzed. Both dopants favor the same atomic configurations with rather strong binding energies and noticeable charge transfer. The adsorption of Fe and Co atoms do not alter the magnetic properties of Au-supported planar silicene, unless a full layer of adsorbate is completed. In the case of substituted system only Fe is able to produce magnetic ground state. The Fe-doped Au-supported planar silicene is a ferromagnetic structure with local antiferromagnetic ordering. The present study is the very first and promising attempt towards ferromagnetic epitaxial planar silicene and points to the importance of the substrate in structural and magnetic properties of silicene.

On the nature of bonding in the photochemical addition of two ethylenes: C-C bond formation in the excited state?

In this work, the 2s + 2s (face-to-face) prototypical example of a photochemical reaction has been re-examined to characterize the evolution of chemical bonding. The analysis of the electron localization function (as an indirect measure of the Pauli principle) along the minimum energy path provides strong evidence supporting that CC bond formation occurs not in the excited state but in the ground electronic state after crossing the rhombohedral S₁/S₀ conical intersection.

Thermal strain engineering of mechanical properties in Si-based hybrid sheets via molecular dynamics simulations

The mechanical properties of pristine and defective Si-based hybrid sheets are studied using molecular dynamics calculations for a temperature ranging from 100 to 800 K, in conjunction with a variable strain rate. When increasing temperature, the melting phase of the hybrids occurs from the solid to the liquid phase, while the increase in the strain rate enhances their elastic parameters. The absence of plastic stage reveals that the fracture pattern is brittle in these 2D materials. Under the uniaxial loading, the systems stretch, resulting in the failure of the crystalline skeletons that lose their rigidity with anisotropic behavior observed only for SiC. In defective hybrids, the point defects reduce the values of fracture strength and strain without affecting the brittle behavior of the sheets. The results impart that coupling high temperature to SiC material offers new possibilities for MEMS devices, whereas SiGe is a promising candidate for microelectronic devices.

Rise of silicene and its applications in gas sensing

Reviewing a subject is done to provide an insight into theoretical and conceptual background of the study. Looking back into the history of an emerging field and summarizing it in a few pages is a herculean task. Anyway, it was imperative to write a few words about the rise of silicene, its properties, and its applications as gas sensors. Currently, silicene is a growing field of interest. It is probably one of the most studied materials nowadays and scientists and researchers are studying it because of its intriguing electronic properties and potential applications in nanoelectronics. Various experimental and theoretical investigations are going on worldwide to explore the various aspects of this field. It is essential to review the literature based on investigations by various scientists in this field.

Ozonation of Group-IV Elemental Monolayers: A First-Principles Study

Environmental effect on the physical and chemical properties of two-dimensional monolayers is a fundamental issue for their practical applications in nanoscale devices operating under ambient conditions. In this paper, we focus on the effect of ozone exposure on group-IV elemental monolayers. Using density functional theory and the climbing image nudged elastic band approach, calculations are performed to find the minimum energy path of O₃-mediated oxidation of the group-IV monolayers, namely graphene, silicene, germanene, and stanene. Graphene and silicene are found to represent two end points of the ozonation process: the former showing resistance to oxidation with an energy barrier of 0.68 eV, while the latter exhibit a rapid, spontaneous dissociation of O₃ into atomic oxygens accompanied by the formation of epoxide like Si-O-Si bonds. Germanene and stanene also form oxides when exposed to O₃, but with a small energy barrier of about 0.3-0.4 eV. Analysis of the results via Bader's charge and density of states shows a higher degree of ionicity of the Si-O bond followed by Ge-O and Sn-O bonds relative to the C-O bond to be the primary factor leading to the distinct ozonation response of the studied group-IV monolayers. In summary, ozonation appears to open the band gap of the monolayers with semiconducting properties forming stable oxidized monolayers, which could likely affect group-IV monolayer-based electronic and photonic devices.

Silicane Derivative Increases Doxorubicin Efficacy in an Ovarian Carcinoma Mouse Model: Fighting Drug Resistance

The development of cancer resistance continues to represent a bottleneck of cancer therapy. It is one of the leading factors preventing drugs to exhibit their full therapeutic potential. Consequently, it reduces the efficacy of anticancer therapy and causes the survival rate of therapy-resistant patients to be far from satisfactory. Here, an emerging strategy for overcoming drug resistance is proposed employing a novel two-dimensional (2D) nanomaterial polysiloxane (PSX). We have reported on the synthesis of PSX nanosheets (PSX NSs) and proved that they have favorable properties for biomedical applications. PSX NSs evinced unprecedented cytocompatibility up to the concentration of 300 μg/mL, while inducing very low level of red blood cell hemolysis and were found to be highly effective for anticancer drug binding. PSX NSs enhanced the efficacy of the anticancer drug doxorubicin (DOX) by around 27.8-43.4% on average and, interestingly, were found to be especially effective in the therapy of drug-resistant tumors, improving the effectiveness of up to 52%. Fluorescence microscopy revealed improved retention of DOX within the drug-resistant cells when bound on PSX NSs. DOX bound on the surface of PSX NSs, i.e., PSX@DOX, improved, in general, the DOX cytotoxicity in vitro. More importantly, PSX@DOX reduced the growth of DOX-resistant tumors in vivo with 3.5 times better average efficiency than the free drug. Altogether, this paper represents an introduction of a new 2D nanomaterial derived from silicane and pioneers its biomedical application. As advances in the field of material synthesis are rapidly progressing, novel 2D nanomaterials with improved properties are being synthesized and await thorough exploration. Our findings further provide a better understanding of the mechanisms involved in the cancer resistance and can promote the development of a precise cancer therapy.

Optical absorption spectra of Xene and Xane (Xsilic, german, stan)

We study optical absorption spectra of Xene and Xane (X = silic, german, stan). The results show that the optical absorption spectra of Xenes are dominated by a sharp peak near the origin due to direct interband transitions near theKpoint of the Brillouin zone. Meanwhile, the optical absorption spectra of Xanes are characterized by an excitonic peak. The Xenes are zero-gap materials with a Dirac cone at theKpoint, whereas Xanes are semiconductors with sizable band gaps. The quasiparticle band gaps of silicane, germanane, and stanane are 3.60, 2.21, and 1.35 eV, respectively; their exciton binding energies are 0.40, 0.33, and 0.20 eV, respectively.

Flat Zigzag Silicene Nanoribbon with Be Bridge

The emergence of flat one- and two-dimensional materials, such as graphene and its nanoribbons, has promoted the rapid advance of the current nanotechnology. Silicene, a silicon analogue of graphene, has the great advantage of its compatibility with the present industrial processes based on silicon nanotechnology. The most significant issue for silicene is instability in the air due to the nonplanar puckered (buckled) structure. Another critical problem is that silicene is usually synthesized by epitaxial growth on a substrate, which strongly affects the π conjugated system of silicene. The fabrication of free-standing silicene with a planar configuration has long been pursued. Here, we report the strategy and design to realize the flat zigzag silicene nanoribbon. We theoretically investigated the stability of various silicene nanoribbons with substituents at the zigzag edges and found that zigzag silicene nanoribbons with beryllium (Be) bridges are very stable in a planar configuration. The obtained zigzag silicene nanoribbon has an indirect negative band gap and is nonmagnetic unlike the magnetic buckled silicene nanoribbons with zigzag edges. The linearly dispersive behavior of the π and π* bands associated with the out-of-plane 3p_si and 2p_Be orbitals is clearly observed, showing the existence of a Dirac point slightly above the Fermi level. We also observed that spin-orbit coupling induces a gap opening at the Dirac point.