1
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MacManus-Driscoll JL, Wu R, Li W. Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges. MATERIALS HORIZONS 2023; 10:1060-1086. [PMID: 36815609 PMCID: PMC10068909 DOI: 10.1039/d2mh01527g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.
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Affiliation(s)
| | - Rui Wu
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
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2
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Hope M, Zhang B, Zhu B, Halat DM, MacManus-Driscoll JL, Grey CP. Revealing the Structure and Oxygen Transport at Interfaces in Complex Oxide Heterostructures via 17O NMR Spectroscopy. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2020; 32:7921-7931. [PMID: 32982045 PMCID: PMC7513580 DOI: 10.1021/acs.chemmater.0c02698] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2020] [Revised: 08/18/2020] [Indexed: 05/24/2023]
Abstract
Vertically aligned nanocomposite (VAN) films, comprising nanopillars of one phase embedded in a matrix of another, have shown great promise for a range of applications due to their high interfacial areas oriented perpendicular to the substrate. In particular, oxide VANs show enhanced oxide-ion conductivity in directions that are orthogonal to those found in more conventional thin-film heterostructures; however, the structure of the interfaces and its influence on conductivity remain unclear. In this work, 17O NMR spectroscopy is used to study CeO2-SrTiO3 VAN thin films: selective isotopic enrichment is combined with a lift-off technique to remove the substrate, facilitating detection of the 17O NMR signal from single atomic layer interfaces. By performing the isotopic enrichment at variable temperatures, the superior oxide-ion conductivity of the VAN films compared to the bulk materials is shown to arise from enhanced oxygen mobility at this interface; oxygen motion at the interface is further identified from 17O relaxometry experiments. The structure of this interface is solved by calculating the NMR parameters using density functional theory combined with random structure searching, allowing the chemistry underpinning the enhanced oxide-ion transport to be proposed. Finally, a comparison is made with 1% Gd-doped CeO2-SrTiO3 VAN films, for which greater NMR signal can be obtained due to paramagnetic relaxation enhancement, while the relative oxide-ion conductivities of the phases remain similar. These results highlight the information that can be obtained on interfacial structure and dynamics with solid-state NMR spectroscopy, in this and other nanostructured systems, our methodology being generally applicable to overcome sensitivity limitations in thin-film studies.
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Affiliation(s)
- Michael
A. Hope
- Department
of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United
Kingdom
| | - Bowen Zhang
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Bonan Zhu
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - David M. Halat
- Department
of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United
Kingdom
| | - Judith L. MacManus-Driscoll
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Clare P. Grey
- Department
of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United
Kingdom
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3
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Xu L, Chen F, Jin F, Huang H, Qu L, Zhang K, Zhang Z, Gao G, Lu Y, Zhang F, Wang K, Ma C, Wu W. Robust Ferroelectric Properties in (K,Na)NbO 3-Based Lead-Free Films via a Self-Assembled Nanocomposite Approach. ACS APPLIED MATERIALS & INTERFACES 2020; 12:4616-4624. [PMID: 31903743 DOI: 10.1021/acsami.9b20311] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
(K,Na)NbO3-based lead-free ferroelectric materials are highly desired in modern electronic applications and have long been considered as a strong candidate for replacing (Pb,Zr)TiO3, but most of them are deficient in large remnant polarization and decent thermal stability. Here, a unique lead-free 0.95(K0.49Na0.49Li0.02)(Nb0.8Ta0.2)O3-0.05CaZrO3 with 2 wt % MnO2 addition (KNNLT-CZ-M) ferroelectric film with special nanocomposite structures grown on La0.7Sr0.3MnO3-coated SrTiO3(001) substrate is demonstrated. The KNNLT-CZ-M films display excellent ferroelectricity with a large twice remnant polarization of 64.91 μC/cm2, a superior thermal stability of ferroelectricity from -196 to 300 °C, and a high Curie temperature of 400 °C. These robust performances could be attributed to the densely arranged self-assembled nanocolumns (∼10 nm in diameter) in the films, which can vertically strain the matrix and enhance its b/a ratio. The formation of the nanocolumns critically depends on the CaZrO3 component. Our results may help the design of a new type of lead-free ferroelectric films and promote their potential applications in microelectronic devices.
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Affiliation(s)
- Liqiang Xu
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Feng Chen
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Feng Jin
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Haoliang Huang
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Lili Qu
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Kexuan Zhang
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Zixun Zhang
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Guanyin Gao
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Yalin Lu
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Fapei Zhang
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
| | - Ke Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Chao Ma
- College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Wenbin Wu
- Department of Physics and High Magnetic Field Laboratory of Chinese Academy of Sciences (CAS) , University of Science and Technology of China , Hefei 230026 , China
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4
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Sun X, Mo X, Liu L, Sun H, Pan C. Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO 2/PAA Nanoporous Composite Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21661-21667. [PMID: 31136140 DOI: 10.1021/acsami.9b02593] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.
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Affiliation(s)
- Xidi Sun
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Xiaoming Mo
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
| | - Lihu Liu
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Huiyuan Sun
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
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5
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Chen A, Su Q, Han H, Enriquez E, Jia Q. Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803241. [PMID: 30368932 DOI: 10.1002/adma.201803241] [Citation(s) in RCA: 54] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2018] [Revised: 08/13/2018] [Indexed: 06/08/2023]
Abstract
Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.
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Affiliation(s)
- Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Qing Su
- Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE, 68583, USA
| | - Hyungkyu Han
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Erik Enriquez
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY, 14260, USA
- Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul, 143-701, South Korea
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6
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Zhang C, Kim DH, Huang X, Sun XY, Aimon NM, Chua SJ, Ross CA. Magnetic and Photoluminescent Coupling in SrTi 0.87Fe 0.13O 3-δ/ZnO Vertical Nanocomposite Films. ACS APPLIED MATERIALS & INTERFACES 2017; 9:32359-32368. [PMID: 28853275 DOI: 10.1021/acsami.7b08741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Self-assembled growth of SrTi0.87Fe0.13O3-δ (STF)/ZnO vertical nanocomposite films by combinatorial pulsed laser deposition is described. The nanocomposite films form vertically aligned columnar epitaxial nanostructures on SrTiO3 substrates, in which the STF shows room-temperature magnetism. The magnetic properties are discussed in terms of strain states, oxygen vacancies, and microstructures. The nanocomposites exhibit magneto-photoluminescent coupling behavior that the near-band-edge emission of ZnO is shifted as a function of magnetic field.
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Affiliation(s)
- Chen Zhang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
- Singapore-MIT Alliance, National University of Singapore , 4 Engineering Drive 3, Singapore 117576
| | - Dong Hun Kim
- Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Xiaohu Huang
- Institute of Materials Research and Engineering , 2 Fusionopolis Way, Singapore 138634
| | - Xue Yin Sun
- Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Nicolas M Aimon
- Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Soo Jin Chua
- Singapore-MIT Alliance, National University of Singapore , 4 Engineering Drive 3, Singapore 117576
- Institute of Materials Research and Engineering , 2 Fusionopolis Way, Singapore 138634
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
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7
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Chen A, Wang Q, Fitzsimmons MR, Enriquez E, Weigand M, Harrell Z, McFarland B, Lü X, Dowden P, MacManus-Driscoll JL, Yarotski D, Jia Q. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700672. [PMID: 28464394 DOI: 10.1002/adma.201700672] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2017] [Revised: 03/15/2017] [Indexed: 06/07/2023]
Abstract
A variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. However, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. Our results shed new light on using oxide interfaces to design functional spintronic devices.
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Affiliation(s)
- Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Qiang Wang
- Materials Science Division, Argonne National Laboratory, Argonne, IL, 60439, USA
- Department of Physics and Astronomy, West Virginia University, Morgantown, WV, 26506, USA
| | - Michael R Fitzsimmons
- Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Erik Enriquez
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Marcus Weigand
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Zach Harrell
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Brian McFarland
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Xujie Lü
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Paul Dowden
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | | | - Dmitry Yarotski
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Quanxi Jia
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY, 14260, USA
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8
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Fernández-Pacheco A, Streubel R, Fruchart O, Hertel R, Fischer P, Cowburn RP. Three-dimensional nanomagnetism. Nat Commun 2017; 8:15756. [PMID: 28598416 PMCID: PMC5494189 DOI: 10.1038/ncomms15756] [Citation(s) in RCA: 155] [Impact Index Per Article: 22.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2016] [Accepted: 04/20/2017] [Indexed: 01/18/2023] Open
Abstract
Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into three dimensions; a move triggered by the advance of unconventional synthesis methods and the discovery of new magnetic effects. In three-dimensional nanomagnets more complex magnetic configurations become possible, many with unprecedented properties. Here we review the creation of these structures and their implications for the emergence of new physics, the development of instrumentation and computational methods, and exploitation in numerous applications. Nanoscale magnetic devices play a key role in modern technologies but current applications involve only 2D structures like magnetic discs. Here the authors review recent progress in the fabrication and understanding of 3D magnetic nanostructures, enabling more diverse functionalities.
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Affiliation(s)
| | - Robert Streubel
- Division of Materials Sciences, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Olivier Fruchart
- Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
| | - Riccardo Hertel
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Department of Magnetic Objects on the Nanoscale, F-67000 Strasbourg, France
| | - Peter Fischer
- Division of Materials Sciences, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.,Department of Physics, UC Santa Cruz, Santa Cruz, California 95064, USA
| | - Russell P Cowburn
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
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9
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Chen A, Hu JM, Lu P, Yang T, Zhang W, Li L, Ahmed T, Enriquez E, Weigand M, Su Q, Wang H, Zhu JX, MacManus-Driscoll JL, Chen LQ, Yarotski D, Jia Q. Role of scaffold network in controlling strain and functionalities of nanocomposite films. SCIENCE ADVANCES 2016; 2:e1600245. [PMID: 27386578 PMCID: PMC4928986 DOI: 10.1126/sciadv.1600245] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2016] [Accepted: 05/19/2016] [Indexed: 05/26/2023]
Abstract
Strain is a novel approach to manipulating functionalities in correlated complex oxides. However, significant epitaxial strain can only be achieved in ultrathin layers. We show that, under direct lattice matching framework, large and uniform vertical strain up to 2% can be achieved to significantly modify the magnetic anisotropy, magnetism, and magnetotransport properties in heteroepitaxial nanoscaffold films, over a few hundred nanometers in thickness. Comprehensive designing principles of large vertical strain have been proposed. Phase-field simulations not only reveal the strain distribution but also suggest that the ultimate strain is related to the vertical interfacial area and interfacial dislocation density. By changing the nanoscaffold density and dimension, the strain and the magnetic properties can be tuned. The established correlation among the vertical interface-strain-properties in nanoscaffold films can consequently be used to tune other functionalities in a broad range of complex oxide films far beyond critical thickness.
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Affiliation(s)
- Aiping Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Jia-Mian Hu
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Ping Lu
- Sandia National Laboratories, Mail Stop 1411, Albuquerque, NM 87185, USA
| | - Tiannan Yang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Wenrui Zhang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
| | - Leigang Li
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
| | - Towfiq Ahmed
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Erik Enriquez
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Marcus Weigand
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Qing Su
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
| | - Haiyan Wang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
| | - Jian-Xin Zhu
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | | | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Dmitry Yarotski
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Quanxi Jia
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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10
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Cho S, Jang JW, Li L, Jian J, Wang H, MacManus-Driscoll JL. Self-Assembled Heteroepitaxial Oxide Nanocomposite for Photoelectrochemical Solar Water Oxidation. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2016; 28:3017-3023. [PMID: 27212792 PMCID: PMC4869611 DOI: 10.1021/acs.chemmater.6b00122] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2016] [Revised: 04/11/2016] [Indexed: 06/02/2023]
Abstract
We report on spontaneously phase ordered heteroepitaxial SrTiO3 (STO):ZnFe2O4 (ZFO) nanocomposite films that give rise to strongly enhanced photoelectrochemical solar water oxidation, consistent with enhanced photoinduced charge separation. The STO:ZFO nanocomposite yielded an enhanced photocurrent density of 0.188 mA/cm2 at 1.23 V vs a reversible hydrogen electrode, which was 7.9- and 2.6-fold higher than that of the plain STO film and ZFO film cases under 1-sun illumination, respectively. The photoelectrode also produced stable photocurrent and Faradaic efficiencies of H2 and O2 formation that were more than 90%. Incident-photon-to-current-conversion efficiency measurements, Tauc plots, Mott-Schottky plots, and electrochemical impedance spectroscopy measurements proved that the strongly enhanced photogenerated charge separation resulted from vertically aligned pseudosingle crystalline components, epitaxial heterojunctions, and a staggered band alignment of the components of the nanocomposite films. This study presents a completely new avenue for efficient solar energy conversion applications.
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Affiliation(s)
- Seungho Cho
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles
Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Ji-Wook Jang
- Helmholtz-Zentrum
Berlin für Materialien und Energie Gmbh, Institute for Solar
Fuels, Hahn-Meitner-Platz 1, Berlin 14109, Germany
| | - Leigang Li
- Department of Materials Science and
Engineering and Department of Electrical and Computer
Engineering, Texas A&M University, College Station, Texas 77843, United
States
| | - Jie Jian
- Department of Materials Science and
Engineering and Department of Electrical and Computer
Engineering, Texas A&M University, College Station, Texas 77843, United
States
| | - Haiyan Wang
- Department of Materials Science and
Engineering and Department of Electrical and Computer
Engineering, Texas A&M University, College Station, Texas 77843, United
States
| | - Judith L. MacManus-Driscoll
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles
Babbage Road, Cambridge, CB3 0FS, United Kingdom
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11
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Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films. Sci Rep 2015; 5:11335. [PMID: 26061829 PMCID: PMC4462142 DOI: 10.1038/srep11335] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2015] [Accepted: 05/22/2015] [Indexed: 11/13/2022] Open
Abstract
Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO3)1-x:(Sm2O3)x thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. Due to a relatively large strain generated at the interfaces, vertical interfaces between BaTiO3 and Sm2O3 are revealed to become the sinks to attract oxygen vacancies. The movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (BaTiO3)1-x:(Sm2O3)x thin films. This work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films.
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12
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Prasad B, Zhang W, Jian J, Wang H, Blamire MG. Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3079-3084. [PMID: 25845706 DOI: 10.1002/adma.201405147] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2014] [Revised: 03/12/2015] [Indexed: 06/04/2023]
Abstract
A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75 Sr0.25 MnO3 -based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.
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Affiliation(s)
- Bhagwati Prasad
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Wenrui Zhang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Jie Jian
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Haiyan Wang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Mark G Blamire
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
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Lee S, Sangle A, Lu P, Chen A, Zhang W, Lee JS, Wang H, Jia Q, MacManus-Driscoll JL. Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:6284-9. [PMID: 25070261 PMCID: PMC4225682 DOI: 10.1002/adma.201401917] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2014] [Revised: 06/28/2014] [Indexed: 05/26/2023]
Abstract
A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.
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Affiliation(s)
- Shinbuhm Lee
- Department of Materials Science and Metallurgy, University of Cambridge27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Abhijeet Sangle
- Department of Materials Science and Metallurgy, University of Cambridge27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Ping Lu
- Sandia National LaboratoriesAlbuquerque, New Mexico, 87185, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies, Los Alamos National LaboratoryLos Alamos, New Mexico, 87545, USA
| | - Wenrui Zhang
- Department of Electrical and Computer Engineering, Texas A&M UniversityCollege Station, Texas, 77843, USA
| | - Jae Sung Lee
- School of Physics, Korea Institute for Advanced StudySeoul, 130–722, Republic of Korea
| | - Haiyan Wang
- Department of Electrical and Computer Engineering, Texas A&M UniversityCollege Station, Texas, 77843, USA
| | - Quanxi Jia
- Center for Integrated Nanotechnologies, Los Alamos National LaboratoryLos Alamos, New Mexico, 87545, USA
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy, University of Cambridge27 Charles Babbage Road, Cambridge, CB3 0FS, UK
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14
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Evolution of microstructure, strain and physical properties in oxide nanocomposite films. Sci Rep 2014; 4:5426. [PMID: 24958206 PMCID: PMC4067618 DOI: 10.1038/srep05426] [Citation(s) in RCA: 29] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2014] [Accepted: 05/21/2014] [Indexed: 11/09/2022] Open
Abstract
We, using LSMO:ZnO nanocomposite films as a model system, have studied the effect of film thickness on the physical properties of nanocomposites. It shows that strain, microstructure, as well as magnetoresistance strongly rely on film thickness. The magnetotransport properties have been fitted by a modified parallel connection channel model, which is in agreement with the microstructure evolution as a function of film thickness in nanocomposite films on sapphire substrates. The strain analysis indicates that the variation of physical properties in nanocomposite films on LAO is dominated by strain effect. These results confirm the critical role of film thickness on microstructures, strain states, and functionalities. It further shows that one can use film thickness as a key parameter to design nanocomposites with optimum functionalities.
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15
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Li W, Zhao R, Tang R, Chen A, Zhang W, Lu X, Wang H, Yang H. Vertical-interface-manipulated conduction behavior in nanocomposite oxide thin films. ACS APPLIED MATERIALS & INTERFACES 2014; 6:5356-5361. [PMID: 24689868 DOI: 10.1021/am5001129] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Vertically aligned nanocomposites with vertical interfaces are a novel concept that show powerful advantages over conventional nanocomposites with lateral interfaces. However, significant obstacles to a systematic understanding of vertical interfaces still remain. Here, heteroepitaxial (BaTiO3)0.5:(Sm2O3)0.5 nanocomposite thin films have been fabricated and the conduction behaviors have been investigated. A spontaneous phase ordering with clear vertical interfaces has been found in the composite films. Because of the structural discontinuity as well as a large strain generated at the interfaces, the vertical interfaces are revealed to become the sinks to attract oxygen vacancies. The accumulated oxygen vacancies contributed to a largely reduced leakage current and a different leakage mechanism in the composite films compared to that of the pure BaTiO3 film. The present work represents a methodology to manipulate functionalities by designing configuration of the interfaces in oxide thin films.
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Affiliation(s)
- Weiwei Li
- School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , Suzhou 215006, China
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