1
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Shu H. Functionalized hexagonal boron nitride bilayers: desirable electro-optical properties for optoelectronic applications. Phys Chem Chem Phys 2024; 26:20059-20067. [PMID: 39007695 DOI: 10.1039/d4cp01846j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
Structural, electronic, and optical properties of functionalized hexagonal boron nitride (h-BN) bilayer were deeply explored by carrying out the PBE + G0W0 + BSE calculations. Hydrogenation/hydrofluorination/fluorination can cause the planar h-BN bilayer to form a novel diamane-like monolayer by interfacial sp3 atom bonding. These functionalized h-BN bilayers are estimated to be stable dynamically due to their phonon dispersions. The functionalization on h-BN bilayer can induce its electronic nature to be transformed from an indirect wide-gap insulator to direct narrow-gap semiconductor, which is desirable for its application in optoelectronics. In particular, hydrogenated and hydrofluorinated h-BN bilayers have strong absorbance coefficients for the near-infrared and visible part of the incident sunlight (larger than 105 cm-1). More interestingly, the binding energy of the observed first bright exciton can achieve a value beyond 1 eV, which can effectively reduce the recombination of photogenerated electron-hole pairs. These results are potentially important for extending the applications of the h-BN bilayer in optoelectronic devices.
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Affiliation(s)
- Huabing Shu
- School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China.
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2
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Sun T, Gao E, Jia X, Bian J, Wang Z, Ma M, Zheng Q, Xu Z. Robust structural superlubricity under gigapascal pressures. Nat Commun 2024; 15:5952. [PMID: 39009569 PMCID: PMC11251065 DOI: 10.1038/s41467-024-49914-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Accepted: 06/17/2024] [Indexed: 07/17/2024] Open
Abstract
Structural superlubricity (SSL) is a state of contact with no wear and ultralow friction. SSL has been characterized at contact with van der Waals (vdW) layered materials, while its stability under extreme loading conditions has not been assessed. By designing both self-mated and non-self-mated vdW contacts with materials chosen for their high strengths, we report outstanding robustness of SSL under very high pressures in experiments. The incommensurate self-mated vdW contact between graphite interfaces can maintain the state of SSL under a pressure no lower than 9.45 GPa, and the non-self-mated vdW contact between a tungsten tip and graphite substrate remains stable up to 3.74 GPa. Beyond this critical pressure, wear is activated, signaling the breakdown of vdW contacts and SSL. This unexpectedly strong pressure-resistance and wear-free feature of SSL breaks down the picture of progressive wear. Atomistic simulations show that lattice destruction at the vdW contact by pressure-assisted bonding triggers wear through shear-induced tearing of the single-atomic layers. The correlation between the breakdown pressure and material properties shows that the bulk modulus and the first ionization energy are the most relevant factors, indicating the combined structural and electronic effects. Impressively, the breakdown pressures defined by the SSL interface could even exceed the strength of materials in contact, demonstrating the robustness of SSL. These findings offer a fundamental understanding of wear at the vdW contacts and guide the design of SSL-enabled applications.
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Affiliation(s)
- Taotao Sun
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China
- Railway Engineering Research Institute, China Academy of Railway Sciences Corporation Limited, Beijing, China
- State Key Laboratory for Track System of High-Speed Railway, China Academy of Railway Sciences Corporation Limited, Beijing, China
| | - Enlai Gao
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, China
| | - Xiangzheng Jia
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, China
| | - Jinbo Bian
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China
| | - Zhou Wang
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China
| | - Ming Ma
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China
| | - Quanshui Zheng
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China.
- Center of Double Helix, Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China.
- Institute of Superlubricity Technology, Research Institute of Tsinghua University in Shenzhen, Shenzhen, China.
| | - Zhiping Xu
- Center for Nano and Micro Mechanics, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, China.
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3
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Zhen J, Huang Q, Shen K, Dong H, Zhang S, Lv K, Yang P, Zhang Y, Guo S, Qiu J, Liu G. Irreversible coherent matching bonding of van der Waals heterostructure lattice by pressure. Proc Natl Acad Sci U S A 2024; 121:e2403726121. [PMID: 38805293 PMCID: PMC11161798 DOI: 10.1073/pnas.2403726121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 04/12/2024] [Indexed: 05/30/2024] Open
Abstract
The key of heterostructure is the combinations created by stacking various vdW materials, which can modify interlayer coupling and electronic properties, providing exciting opportunities for designer devices. However, this simple stacking does not create chemical bonds, making it difficult to fundamentally alter the electronic structure. Here, we demonstrate that interlayer interactions in heterostructures can be fundamentally controlled using hydrostatic pressure, providing a bonding method to modify electronic structures. By covering graphene with boron nitride and inducing an irreversible phase transition, the conditions for graphene lattice-matching bonding (IMB) were created. We demonstrate that the increased bandgap of graphene under pressure is well maintained in ambient due to the IMB in the interface. Comparison to theoretical modeling emphasizes the process of pressure-induced interfacial bonding, systematically generalizes, and predicts this model. Our results demonstrate that pressure can irreversibly control interlayer bonding, providing opportunities for high-pressure technology in ambient applications and IMB engineering in heterostructures.
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Affiliation(s)
- Jiapeng Zhen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Qiushi Huang
- Beijing Computational Science Research Center, Beijing100093, People’s Republic of China
| | - Kai Shen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai201203, People’s Republic of China
| | - Shihui Zhang
- Center for High Pressure Science and Technology Advanced Research, Shanghai201203, People’s Republic of China
- State Key Laboratory for Superhard Materials, Jilin University, Changchun130012, People’s Republic of China
| | - Kehong Lv
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Peng Yang
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Yong Zhang
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Silin Guo
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Jing Qiu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
| | - Guanjun Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan410073, People’s Republic of China
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4
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Zuo P, Liu T, Li F, Wang G, Zhang K, Li X, Han W, Tian H, Hu L, Huang H, Zhu D, Jiang L. Controllable Fabrication of Hydrophilic Surface Micro/Nanostructures of CFRP by Femtosecond Laser. ACS OMEGA 2024; 9:20988-20996. [PMID: 38764673 PMCID: PMC11097191 DOI: 10.1021/acsomega.4c00148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/21/2024] [Accepted: 04/16/2024] [Indexed: 05/21/2024]
Abstract
Carbon fiber reinforced polymer (CFRP), a highly engineered lightweight material with superior properties, is widely used in industrial fields, such as aerospace, automobile, and railway transportation, as well as medical implants and supercapacitor. This work presents an effective surface treatment method for the controllable fabrication of hydrophilic surface micro/nanostructures of CFRP through femtosecond laser processing. Selective removal of the epoxy resin and leaving the carbon fibers exposed are achieved when CFRP is weakly ablated by a femtosecond laser. The diameters and structures of the carbon fibers can be controlled by adjusting the laser processing parameters. Three-dimensional surface micro/nanostructures are processed when CFRP is strongly ablated by a femtosecond laser. Meanwhile, the transformation of the sp2 orbitals to sp3 orbitals of graphitic carbons of carbon fibers is induced by a femtosecond laser. Moreover, the investigation of surface roughness and wettability of femtosecond laser-processed CFRP indicates increased roughness and excellent hydrophilicity (a contact angle of 28.1°). This work reveals the effect of femtosecond laser processing on the regulation of the physicochemical properties of CFRP, which can be applicable to surface treatment and performance control of other fiber-resin composites. The excellent hydrophilicity will be conducive to the combination of CFRP with other materials or to reducing the friction resistance of CFRP used in medical implants.
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Affiliation(s)
- Pei Zuo
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Tongfeng Liu
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Fang Li
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Guoyan Wang
- Beijing
Institute of Space Mechanics & Electricity, China Academy of Space Technology, Beijing 100094, China
| | - Kaihu Zhang
- Beijing
Spacecrafts, China Academy of Space Technology, Beijing 100094, China
| | - Xin Li
- Laser
Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Weina Han
- Laser
Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hong Tian
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Lifei Hu
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Helang Huang
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Di Zhu
- School
of Mechanical and Electrical Engineering, Hubei Provincial Key Laboratory
of Chemical Equipment Intensification and Intrinsic Safety, School
of Optical Information and Energy Engineering, Wuhan Institute of Technology, Wuhan 430205, China
| | - Lan Jiang
- Laser
Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Beijing
Institute of Technology Chongqing Innovation Center, Chongqing 401120, China
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5
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Ma S, Zhao Y, Li H, Farla R, Zhang Z, Zhou C, Zhao X, Huang Y, Liu Y, Bao K, Yang B, Yang X, Zhu P, Tao Q, Cui T. Self-Catalyzed Hydrogenated Carbon Nano-Onions Facilitates Mild Synthesis of Transparent Nano-Polycrystalline Diamond. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305512. [PMID: 37759410 DOI: 10.1002/smll.202305512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Revised: 09/04/2023] [Indexed: 09/29/2023]
Abstract
Transparent nano-polycrystalline diamond (t-NPD) possesses superior mechanical properties compared to single and traditional polycrystalline diamonds. However, the harsh synthetic conditions significantly limit its synthesis and applications. In this study, a synthesis routine is presented for t-NPD under low pressure and low temperature conditions, 10 GPa, 1600 °C and 15 GPa, 1350 °C similar with the synthesis condition of organic precursor. Self-catalyzed hydrogenated carbon nano-onions (HCNOs) from the combustion of naphthalene enable synthesis under nearly industrial conditions, which are like organic precursor and much lower than that of graphite and other carbon allotropes. This is made possible thanks to the significant impact of hydrogen on the thermodynamics, as it chemically facilitates phase transition. Ubiquitous nanotwinned structures are observed throughout t-NPD due to the high concentration of puckered layers and stacking faults of HCNOs, which impart a Vickers hardness about 140 GPa. This high hardness and optical transparency can be attributed to the nanocrystalline grain size, thin intergranular films, absence of secondary phase and pore-free features. The facile and industrial-scale synthesis of the HCNOs precursor, and mild synthesis conditions make t-NPD suitable for a wide range of potential applications.
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Affiliation(s)
- Shuailing Ma
- Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo, 315211, China
- Center for High Pressure Science & Technology Advanced Research, Beijing, 100094, China
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse, 85, 22607, Hamburg, Germany
| | - Yongsheng Zhao
- Center for High Pressure Science & Technology Advanced Research, Beijing, 100094, China
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse, 85, 22607, Hamburg, Germany
| | - Hailong Li
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian, 116024, China
- Max-Planck-Institute for Polymer Research, Department of Physics at Interfaces, Ackermannweg 10, 55128, Mainz, Germany
| | - Robert Farla
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse, 85, 22607, Hamburg, Germany
| | - Zihan Zhang
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
| | - Chao Zhou
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
| | - Xingbin Zhao
- Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo, 315211, China
| | - Yanping Huang
- Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo, 315211, China
| | - Yanhui Liu
- Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo, 315211, China
| | - Kuo Bao
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
| | - Bin Yang
- Center for High Pressure Science & Technology Advanced Research, Beijing, 100094, China
| | - Xigui Yang
- Henan Key laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Mistry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Pinwen Zhu
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
| | - Qiang Tao
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
| | - Tian Cui
- Institute of High Pressure Physics, School of Physical Scientific and Technology, Ningbo University, Ningbo, 315211, China
- Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
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6
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Gao L, Liu Y, Liang Y, Gao N, Liu J, Li H. Structural stability and electronic and mechanical properties of nitrogen- and boron-doped fluorinated diamane. Phys Chem Chem Phys 2023; 25:24518-24525. [PMID: 37656439 DOI: 10.1039/d3cp03302c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
In this work, the structural, electronic and mechanical properties of fluorinated diamane (F-diamane) with N and B dopants are systemically investigated using first-principles calculation. The N atom tends to stay in the external substituted site without F saturation, while the B-doped structure of the substituted external site with F saturation is the most stable. Ab initio molecular dynamics simulations confirm the thermal stability. The band structures of stable doped structures are similar to that of pristine F-diamane, due to the slight contribution of the dopant to the band edges. In addition, after the introduction of the B dopant, the formation energy reduces, and the transition barrier of graphene bilayers into diamane is smaller, indicating the feasibility of graphene bilayer fluoridation. Furthermore, we find that these doped structures have mechanical stability with isotropic elastic constants, Young's modulus, shear modulus and Poisson's ratio. Our work would promote the synthesis and development of two-dimensional diamane.
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Affiliation(s)
- Lilin Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Yaning Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Yaqi Liang
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Nan Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
- Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
| | - Junsong Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Hongdong Li
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
- Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
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7
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Cheng C, Zhang X, Ma S, Wang S. Theoretical insights into the stability of buckled tetragonal graphene and the prediction of novel carbon allotropes. Phys Chem Chem Phys 2023; 25:13116-13125. [PMID: 37128892 DOI: 10.1039/d3cp00512g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Buckled tetragonal graphene (BTG), a novel allotrope of graphene, has been reported to possess Dirac-like fermions and high Fermi velocities. However, the stability of BTG is still controversial. Here, first principles calculations and ab initio molecular dynamics (AIMD) were performed to study the stability of three kinds of tetragonal graphenes (TGs), including planar tetragonal graphene (PTG), BTG reported by Liu et al. [Phys. Rev. Lett., 2012, 108, 225505] and the novel BTG constructed by us. For the two BTGs, phonon dispersions predict that they are stable, but this conclusion is contradictory with the results of energy analysis, vibrational mode analysis and AIMD simulations. Our electronic structure analysis shows that the delocalized Π bonds formed by unbonded pz electrons drive the stability of PTG and may induce the transformation of the two BTGs into PTG. Our further study of phonon dispersions on planar hexagonal graphene (PHG) and buckled hexagonal graphene (BHG) indicates that the phonon dispersion at 0 K may have some limitations in predicting the stability of 2D carbon materials and thus cannot accurately describe the stability of BTGs. In addition, we have predicted several hydrogenated and fluorinated TGs, and theoretically demonstrated that chemical modification can make metallic PTG become a semiconductor with a certain bandgap. Moreover, the bandgaps of these new materials can be further regulated by increasing the thickness of the carbon atomic layer, which makes them promising for semiconductor devices and energy storage.
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Affiliation(s)
- Chao Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Liaoning, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, Liaoning, China
| | - Xin Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Liaoning, China.
| | - Shangyi Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Liaoning, China.
| | - Shaoqing Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Liaoning, China.
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8
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Xing B, Sang D, Wang X, Li H, Zhang L. First-principles screening of surface-charge-transfer molecular dopants for n-type diamond. NANOTECHNOLOGY 2023; 34:265201. [PMID: 36963109 DOI: 10.1088/1361-6528/acc745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Accepted: 03/24/2023] [Indexed: 06/18/2023]
Abstract
Surface charge transfer doping (SCTD) is an alternative approach to achieving n-type doped diamonds since the n-type bulk doping of diamonds remains a challenge, but so far efficient diamond n-type SCTD has not been achieved. Here we provide a comprehensive study of the n-type SCTD of the diamond by using first-principles calculations based on the density functional theory. Taking the principle that ionization potentials of the dopants must be higher than those of the diamond, we screened a series of molecules that may be suitable for diamond n-type SCTD doping. Methyl viologen and benzyl viologen provide the largest amount of transfer electron among the common n-type SCTD dopants for the oxygen and fluorine terminated (100) surface diamond, with the electron areal densities of2.60×1013cm-2and9.20×1012cm-2,respectively. It is indicated that the transferred electron amount is positively correlated with the difference between the ionization potentials of the dopants and the electron affinity of the diamond, while the density of dopants also has a positive impact with a decreasing trend. The present work provides a useful understanding of the physical mechanism for the n-type SCTD of diamonds, and benefits the development of n-type SCTD diamond materials.
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Affiliation(s)
- Bangyu Xing
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Dandan Sang
- Shandong Key Laboratory of Optical Communication Science and Technology, and School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, People's Republic of China
| | - Xueting Wang
- Shandong Key Laboratory of Optical Communication Science and Technology, and School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, People's Republic of China
| | - Hongdong Li
- State Key Laboratory of Superhard Materials, and School of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
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9
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Tantardini C, Kvashnin AG, Azizi M, Gonze X, Gatti C, Altalhi T, Yakobson BI. Electronic Properties of Functionalized Diamanes for Field-Emission Displays. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16317-16326. [PMID: 36926821 PMCID: PMC10064316 DOI: 10.1021/acsami.3c01536] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
Ultrathin diamond films, or diamanes, are promising quasi-2D materials that are characterized by high stiffness, extreme wear resistance, high thermal conductivity, and chemical stability. Surface functionalization of multilayer graphene with different stackings of layers could be an interesting opportunity to induce proper electronic properties into diamanes. Combination of these electronic properties together with extraordinary mechanical ones will lead to their applications as field-emission displays substituting original devices with light-emitting diodes or organic light-emitting diodes. In the present study, we focus on the electronic properties of fluorinated and hydrogenated diamanes with (111), (110), (0001), (101̅0), and (2̅110) crystallographic orientations of surfaces of various thicknesses by using first-principles calculations and Bader analysis of electron density. We see that fluorine induces an occupied surface electronic state, while hydrogen modifies the occupied bulk state and also induces unoccupied surface states. Furthermore, a lower number of layers is necessary for hydrogenated diamanes to achieve the convergence of the work function in comparison with fluorinated diamanes, with the exception of fluorinated (110) and (2̅110) films that achieve rapid convergence and have the same behavior as other hydrogenated surfaces. This induces a modification of the work function with an increase of the number of layers that makes hydrogenated (2̅110) diamanes the most suitable surface for field-emission displays, better than the fluorinated counterparts. In addition, a quasi-quantitative descriptor of surface dipole moment based on the Tantardini-Oganov electronegativity scale is introduced as the average of bond dipole moments between the surface atoms. This new fundamental descriptor is capable of predicting a priori the bond dipole moment and may be considered as a new useful feature for crystal structure prediction based on artificial intelligence.
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Affiliation(s)
- Christian Tantardini
- Hylleraas
Center, Department of Chemistry, UiT The
Arctic University of Norway, P.O. Box 6050 Langnes, N-9037 Tromsø, Norway
- Department
of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Institute
of Solid State Chemistry and Mechanochemistry SB RAS, Novosibirsk 630128, Russian Federation
| | - Alexander G. Kvashnin
- Skolkovo
Institute of Science and Technology, Bolshoi Boulevard 30, Building 1, Moscow 121205, Russian Federation
| | - Maryam Azizi
- Université
catholique de Louvain, Place de l’Université 1, Ottignies-Louvain-la-Neuve 1348, Belgium
| | - Xavier Gonze
- Université
catholique de Louvain, Place de l’Université 1, Ottignies-Louvain-la-Neuve 1348, Belgium
| | - Carlo Gatti
- SCITEC
-
Istituto di Scienze e Tecnologie Chimiche “Giulio Natta”, CNR - Consiglio Nazionale delle Ricerche, sezione di via Golgi, 19, Milan 20133, Italy
| | - Tariq Altalhi
- Chemistry
Department, Taif University, Al Hawiyah, Taif 26571, Saudi Arabia
| | - Boris I. Yakobson
- Department
of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Chemistry
Department, Taif University, Al Hawiyah, Taif 26571, Saudi Arabia
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10
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Demin VA, Chernozatonskii LA. Diamane-like Films Based on Twisted G/BN Bilayers: DFT Modelling of Atomic Structures and Electronic Properties. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:841. [PMID: 36903720 PMCID: PMC10004773 DOI: 10.3390/nano13050841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 02/21/2023] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Diamanes are unique 2D carbon materials that can be obtained by the adsorption of light atoms or molecular groups onto the surfaces of bilayer graphene. Modification of the parent bilayers, such as through twisting of the layers and the substitution of one of the layers with BN, leads to drastic changes in the structure and properties of diamane-like materials. Here, we present the results of the DFT modelling of new stable diamane-like films based on twisted Moiré G/BN bilayers. The set of angles at which this structure becomes commensurate was found. We used two commensurate structures with twisted angles of θ = 10.9° and θ = 25.3° with the smallest period as the base for the formation of the diamane-like material. Previous theoretical investigations did not take into account the incommensurability of graphene and boron nitride monolayers when considering diamane-like films. The double-sided hydrogenation or fluorination of Moiré G/BN bilayers and the following interlayer covalent bonding led to the opening of a gap up to 3.1 eV, which was lower than the corresponding values of h-BN and c-BN. The considered G/BN diamane-like films offer great potential in the future for a variety of engineering applications.
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11
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Masese T, Kanyolo GM, Miyazaki Y, Ito M, Taguchi N, Rizell J, Tachibana S, Tada K, Huang Z, Alshehabi A, Ubukata H, Kubota K, Yoshii K, Senoh H, Tassel C, Orikasa Y, Kageyama H, Saito T. Honeycomb-Layered Oxides With Silver Atom Bilayers and Emergence of Non-Abelian SU(2) Interactions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204672. [PMID: 36575151 PMCID: PMC9951339 DOI: 10.1002/advs.202204672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Honeycomb-layered oxides with monovalent or divalent, monolayered cationic lattices generally exhibit myriad crystalline features encompassing rich electrochemistry, geometries, and disorders, which particularly places them as attractive material candidates for next-generation energy storage applications. Herein, global honeycomb-layered oxide compositions, Ag2 M2 TeO6 (M = Ni , Mg , etc $M = \rm Ni, Mg, etc$ .) exhibiting Ag $\rm Ag$ atom bilayers with sub-valent states within Ag-rich crystalline domains of Ag6 M2 TeO6 and Ag $\rm Ag$ -deficient domains ofAg 2 - x Ni 2 TeO 6 ${\rm Ag}_{2 - x}\rm Ni_2TeO_6$ (0 < x < 2 $0 < x < 2$ ). The Ag $\rm Ag$ -rich material characterized by aberration-corrected transmission electron microscopy reveals local atomic structural disorders characterized by aperiodic stacking and incoherency in the bilayer arrangement of Ag $\rm Ag$ atoms. Meanwhile, the global material not only displays high ionic conductivity but also manifests oxygen-hole electrochemistry during silver-ion extraction. Within the Ag $\rm Ag$ -rich domains, the bilayered structure, argentophilic interactions therein and the expected Ag $\rm Ag$ sub-valent states (1 / 2 + , 2 / 3 + $1/2+, 2/3+$ , etc.) are theoretically understood via spontaneous symmetry breaking of SU(2)× U(1) gauge symmetry interactions amongst 3 degenerate mass-less chiral fermion states, justified by electron occupancy of silver4 d z 2 $4d_{z^2}$ and 5s orbitals on a bifurcated honeycomb lattice. This implies that bilayered frameworks have research applications that go beyond the confines of energy storage.
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Affiliation(s)
- Titus Masese
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
- AIST‐Kyoto University Chemical Energy Materials Open Innovation Laboratory (ChEM‐OIL)Sakyo‐kuKyoto606‐8501Japan
| | - Godwill Mbiti Kanyolo
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
- Department of Engineering ScienceThe University of Electro‐Communications1‐5‐1 ChofugaokaChofuTokyo182‐8585Japan
| | - Yoshinobu Miyazaki
- Tsukuba LaboratorySumika Chemical Analysis Service (SCAS), Ltd.TsukubaIbaraki300‐3266Japan
| | - Miyu Ito
- Tsukuba LaboratorySumika Chemical Analysis Service (SCAS), Ltd.TsukubaIbaraki300‐3266Japan
| | - Noboru Taguchi
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
| | - Josef Rizell
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
- Department of PhysicsChalmers University of TechnologySE‐412GöteborgSweden
| | - Shintaro Tachibana
- Graduate School of Life SciencesRitsumeikan University1‐1‐1 Noji‐higashiKusatsuShiga525‐8577Japan
| | - Kohei Tada
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
| | - Zhen‐Dong Huang
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Nanjing University of Posts and Telecommunications (NUPT)Nanjing210023China
| | - Abbas Alshehabi
- Department of Industrial EngineeringNational Institute of Technology (KOSEN)Ibaraki College, 866 NakaneHitachinakaIbaraki312‐8508Japan
| | - Hiroki Ubukata
- Department of Energy and Hydrocarbon ChemistryGraduate School of EngineeringKyoto UniversityNishikyo‐kuKyoto615‐8510Japan
| | - Keigo Kubota
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
| | - Kazuki Yoshii
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
| | - Hiroshi Senoh
- Research Institute of Electrochemical EnergyNational Institute of Advanced Industrial Science and Technology (AIST)1‐8‐31 MidorigaokaIkedaOsaka563‐8577Japan
| | - Cédric Tassel
- Department of Energy and Hydrocarbon ChemistryGraduate School of EngineeringKyoto UniversityNishikyo‐kuKyoto615‐8510Japan
| | - Yuki Orikasa
- Graduate School of Life SciencesRitsumeikan University1‐1‐1 Noji‐higashiKusatsuShiga525‐8577Japan
| | - Hiroshi Kageyama
- Department of Energy and Hydrocarbon ChemistryGraduate School of EngineeringKyoto UniversityNishikyo‐kuKyoto615‐8510Japan
| | - Tomohiro Saito
- Tsukuba LaboratorySumika Chemical Analysis Service (SCAS), Ltd.TsukubaIbaraki300‐3266Japan
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12
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Varlamova LA, Erohin SV, Larionov KV, Sorokin PB. Diamane Oxide. Two-Dimensional Film with Mixed Coverage and a Variety of Electronic Properties. J Phys Chem Lett 2022; 13:11383-11390. [PMID: 36455070 DOI: 10.1021/acs.jpclett.2c02943] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Here, we investigate stability of the diamane oxide films and show that various compositions can be realized depending on the precursors, temperature, and pressure. We demonstrate that the commonly used oxygen source in the H2O form requires pressures of GPa order to fabricate the film, which is in full agreement with the experimental data. We show that different types of functional groups can tailor electronic properties of bilayer diamane. Finally, we study electronic property dependence on the film thickness, elucidating its connection with surface states.
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Affiliation(s)
- Liubov A Varlamova
- National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow119049, Russian Federation
| | - Sergey V Erohin
- National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow119049, Russian Federation
| | - Konstantin V Larionov
- National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow119049, Russian Federation
| | - Pavel B Sorokin
- National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow119049, Russian Federation
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13
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Emelin EV, Cho HD, Korepanov VI, Varlamova LA, Erohin SV, Kim DY, Sorokin PB, Panin GN. Formation of Diamane Nanostructures in Bilayer Graphene on Langasite under Irradiation with a Focused Electron Beam. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12244408. [PMID: 36558260 PMCID: PMC9786889 DOI: 10.3390/nano12244408] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2022] [Revised: 12/01/2022] [Accepted: 12/03/2022] [Indexed: 05/27/2023]
Abstract
In the presented paper, we studied bilayer CVD graphene transferred to a langasite substrate and irradiated with a focused electron beam through a layer of polymethyl methacrylate (PMMA). Changes in the Raman spectra and an increase in the electrical resistance of bigraphene after irradiation indicate a local phase transition associated with graphene diamondization. The results are explained in the framework of the theory of a chemically induced phase transition of bilayer graphene to diamane, which can be associated with the release of hydrogen and oxygen atoms from PMMA and langasite due to the "knock-on" effect, respectively, upon irradiation of the structure with an electron beam. Theoretical calculations of the modified structure of bigraphene on langasite and the experimental evaluation of sp3-hybridized carbon fraction indicate the formation of diamane nanoclusters in the bigraphene irradiated regions. This result can be considered as the first realization of local tunable bilayer graphene diamondization.
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Affiliation(s)
- Eugenii V. Emelin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
| | - Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
| | - Vitaly I. Korepanov
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
| | - Liubov A. Varlamova
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Sergey V. Erohin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Pavel B. Sorokin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Gennady N. Panin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
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14
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Varlamova LA, Erohin SV, Sorokin PB. The Role of Structural Defects in the Growth of Two-Dimensional Diamond from Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12223983. [PMID: 36432269 PMCID: PMC9698712 DOI: 10.3390/nano12223983] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/09/2022] [Accepted: 11/10/2022] [Indexed: 05/27/2023]
Abstract
The presented work is devoted to the study of the formation of the thinnest diamond film (diamane). We investigate the initial stages of diamond nucleation in imperfect bilayer graphene exposed by the deposition of H atoms (chemically induced phase transition). We show that defects serve as nucleation centers, their hydrogenation is energy favorable and depends on the defect type. Hydrogenation of vacancies facilitates the binding of graphene layers, but the impact wanes already at the second coordination sphere. Defects influence of 5|7 is lower but promotes diamondization. The grain boundary role is similar but can lead to the final formation of a diamond film consisting of chemically connected grains with different surfaces. Interestingly, even hexagonal and cubic two-dimensional diamonds can coexist together in the same film, which suggests the possibility of obtaining a new two-dimensional polycrystal unexplored before.
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15
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Chernozatonskii LA, Demin VA, Kvashnin DG. Moiré Diamones: New Diamond-like Films of Semifunctionalized Twisted Graphene Layers. J Phys Chem Lett 2022; 13:5399-5404. [PMID: 35679125 DOI: 10.1021/acs.jpclett.2c00948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We proposed novel carbon nanostructures based on a twisted few-layered graphene with one side passivated by hydrogen or fluorine: Moiré diamones on graphene. The presence of a dangling bond at the bottom layer of diamones leads to the appearance of spin density localization, which can be tuned by the variation of the twist angle with the following formation of Moiré diamones. The spin-polarized nature of electronic density distribution was obtained and discussed in detail on the basis of ab initio calculations. Such a feature makes Moiré diamones a promising key element in the field of controllable spintronic devices.
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Affiliation(s)
| | - Victor A Demin
- Emanuel Institute of Biochemical Physics RAS, Kosigin st. 4, 119334 Moscow, Russian Federation
| | - Dmitry G Kvashnin
- Emanuel Institute of Biochemical Physics RAS, Kosigin st. 4, 119334 Moscow, Russian Federation
- Moscow Institute of Physics and Technology (National Research University), 9 Institutskiy per., Dolgoprudny, Moscow Region 141701, Russian Federation
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16
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Abstract
Artificial diamond plays a vital role in the manufacturing industry, jewelry, and future photoelectronic devices, but it is a key challenge to prepare the required large-area diamonds. A distinctive way to solve this problem possibly hides in the undiscovered formation mechanism of thermodynamically metastable diamond compared to graphite in low-pressure chemical vapor deposition. We design a series of short-term growth on the margins of cauliflower-like nanocrystalline diamond particles and find that diamond is formed by the transformation from graphite, not by the piling up of sp3 carbon. Atomically dispersed Ta atoms let the transition spontaneously occur. This subverts the general knowledge and supplies a way to prepare large-area diamonds based on large-sized graphite under normal pressure. It is a key challenge to prepare large-area diamonds by using the methods of high-pressure high-temperature and normal chemical vapor deposition (CVD). The formation mechanism of thermodynamically metastable diamond compared to graphite in low-pressure CVD possibly implies a distinctive way to synthesize large-area diamonds, while it is an intriguing problem due to the limitation of in situ characterization in this complex growth environment. Here, we design a series of short-term growth on the margins of cauliflower-like nanocrystalline diamond particles, allowing us to clearly observe the diamond formation process. The results show that vertical graphene sheets and nanocrystalline diamonds alternatively appear, in which vertical graphene sheets evolve into long ribbons and graphite needles, and they finally transform into diamonds. A transition process from graphite (200) to diamond (110) verifies the transformation, and Ta atoms from hot filaments are found to atomically disperse in the films. First principle calculations confirm that Ta-added H- or O-terminated bilayer graphene spontaneously transforms into diamond. This reveals that in the H, O, and Ta complex atmosphere of the CVD environment, diamond is formed by phase transformation from graphite. This subverts the general knowledge that graphite is etched by hydrogen and sp3 carbon species pile up to form diamond and supplies a way to prepare large-area diamonds based on large-sized graphite under normal pressure. This also provides an angle to understand the growth mechanism of materials with sp2 and sp3 electronic configurations.
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17
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Ho VH, Ho DT, Nguyen CT, Kim SY. Negative out-of-plane Poisson's ratio of bilayer graphane. NANOTECHNOLOGY 2022; 33:255705. [PMID: 35287123 DOI: 10.1088/1361-6528/ac5da0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 03/14/2022] [Indexed: 06/14/2023]
Abstract
With its excellent mechanical and thermal properties, bilayer graphane is a promising material for realizing future nanoelectromechanical systems. In this study, we focus on the auxetic behavior of bilayer graphane under external loading along various directions through atomistic simulations. We numerically and theoretically reveal the mechanism of the auxeticity in terms of intrinsic interactions between carbon atoms by constructing bilayer graphane. Given that the origin of the auxeticity is intrinsic rather than extrinsic, the work provides a novel technique to control the dimensions of nanoscale bilayer graphane by simply changing the external conditions without the requirement of complex structural design of the material.
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Affiliation(s)
- Viet Hung Ho
- Department of Mechanical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Duc Tam Ho
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Cao Thang Nguyen
- Department of Mechanical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sung Youb Kim
- Department of Mechanical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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18
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Tiwari SK, Pandey R, Wang N, Kumar V, Sunday OJ, Bystrzejewski M, Zhu Y, Mishra YK. Progress in Diamanes and Diamanoids Nanosystems for Emerging Technologies. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105770. [PMID: 35174979 PMCID: PMC9008418 DOI: 10.1002/advs.202105770] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
New materials are the backbone of their technology-driven modern civilization and at present carbon nanostructures are the leading candidates that have attracted huge research activities. Diamanes and diamanoids are the new nanoallotropes of sp3 hybridized carbon which can be fabricated by proper functionalization, substitution, and via Birch reduction under controlled pressure using graphitic system as a precursor. These nanoallotropes exhibit outstanding electrical, thermal, optical, vibrational, and mechanical properties, which can be an asset for new technologies, especially for quantum devices, photonics, and space technologies. Moreover, the features like wide bandgap, tunable thermal conductivity, excellent thermal insulation, etc. make diamanes and diamanoids ideal candidates for nano-electrical devices, nano-resonators, optical waveguides, and the next generation thermal management systems. In this review, diamanes and diamanoids are discussed in detail in terms of its historical prospect, method of synthesis, structural features, broad properties, and cutting-edge applications. Additionally, the prospects of diamanes and diamanoids for new applications are carefully discussed. This review aims to provide a critical update with important ideas for a new generation of quantum devices based on diamanes and diamanoids which are going to be an important topic in the future of carbon nanotechnology.
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Affiliation(s)
- Santosh K. Tiwari
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Raunak Pandey
- Department of Chemical Science and EngineeringKathmandu UniversityDhulikhel44600Nepal
| | - Nannan Wang
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Vijay Kumar
- Department of PhysicsNational Institute of Technology SrinagarHazratbalJammu and Kashmir19006India
- Department of PhysicsUniversity of the Free StateP.O. Box 339BloemfonteinZA9300South Africa
| | - Olusegun J. Sunday
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
| | | | - Yanqiu Zhu
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
- College of EngineeringMathematics and Physical SciencesUniversity of ExeterExeterEX4 4QFUK
| | - Yogendra Kumar Mishra
- Smart MaterialsNanoSYDMads Clausen InstituteUniversity of Southern DenmarkAlsion 2Sønderborg6400Denmark
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19
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Vejpravová J. Mixed sp 2-sp 3 Nanocarbon Materials: A Status Quo Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2469. [PMID: 34684910 PMCID: PMC8539693 DOI: 10.3390/nano11102469] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2021] [Revised: 08/29/2021] [Accepted: 09/17/2021] [Indexed: 11/16/2022]
Abstract
Carbon nanomaterials with a different character of the chemical bond-graphene (sp2) and nanodiamond (sp3)-are the building bricks for a new class of all-carbon hybrid nanomaterials, where the two different carbon networks with sp3 and sp2 hybridization coexist, interacting and even transforming into one another. The extraordinary physiochemical properties defined by the unique electronic band structure of the two border nanoallotropes ensure the immense application potential and versatility of these all-carbon nanomaterials. The review summarizes the status quo of sp2 - sp3 nanomaterials, including graphene/graphene-oxide-nanodiamond composites and hybrids, graphene/graphene-oxide-diamond heterojunctions, and other sp2-sp3 nanocarbon hybrids for sensing, electronic, and other emergent applications. Novel sp2-sp3 transitional nanocarbon phases and architectures are also discussed. Furthermore, the two-way sp2 (graphene) to sp3 (diamond surface and nanodiamond) transformations at the nanoscale, essential for innovative fabrication, and stability and chemical reactivity assessment are discussed based on extensive theoretical, computational and experimental studies.
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Affiliation(s)
- Jana Vejpravová
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic
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20
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Shu H. Novel Janus diamane C 4FCl: a stable and moderate bandgap semiconductor with a huge excitonic effect. Phys Chem Chem Phys 2021; 23:18951-18957. [PMID: 34612434 DOI: 10.1039/d1cp02632a] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Semiconducting two-dimensional Janus materials have drawn increasing attention due to their novel optoelectronic properties. Here, employing first-principles calculations, we systematically explore the stability and electronic and optical properties of Janus diamane C4FCl. The energetic and dynamical stabilities of C4FCl have been verified using the cohesive energy and phonon dispersion calculations. It is predicted to possess a direct bandgap of ∼3 eV at the Γ point using the G0W0 method. Also, the optical absorption spectrum of C4FCl is dominated by the enhanced excitonic effects, in which a bright bound exciton with a large binding energy beyond 1 eV can be observed. The light absorption coefficient of C4FCl for sunlight can be as large as 8 × 104 cm-1 in the range of visible and near-ultraviolet light, suggesting its potential for optoelectronic applications. These findings enable a deep understanding of the physical properties of novel C4FCl.
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Affiliation(s)
- Huabing Shu
- School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China.
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21
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Liu Y, Gong M, Jia S, Gao N, Li H. Structural, Electronic, and Mechanical Properties of 2D Oxidized Diamond (100) Nanofilms. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100165] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Yaning Liu
- State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China
| | - Mengmeng Gong
- State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China
| | - Suna Jia
- State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China
| | - Nan Gao
- State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China
- Shenzhen Research Institute Jilin University Shenzhen 518057 P. R. China
| | - Hongdong Li
- State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China
- Shenzhen Research Institute Jilin University Shenzhen 518057 P. R. China
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22
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Sorokin PB, Yakobson BI. Two-Dimensional Diamond-Diamane: Current State and Further Prospects. NANO LETTERS 2021; 21:5475-5484. [PMID: 34213910 DOI: 10.1021/acs.nanolett.1c01557] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional diamond, or diamane, is an ultrathin film with unique physical properties that combine the record values of the bulk crystal with the exciting features caused by the nanoscale nature. At the current stage of research, the diamane properties are mostly studied theoretically, and the main experimental efforts are directed at its synthesis. The latter is the trickiest problem since traditional methods involving the application of high pressure are not fully suitable due to the influence of surface effects. For diamane research, this poses a number of challenges, whose description is the main purpose and scope of this review. The paper also discusses the progress made so far and outlines the prospects for this field, at the crossroads of the timeless diamond and decade-old graphene.
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Affiliation(s)
- Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russian Federation
| | - Boris I Yakobson
- Department of Mechanical Engineering & Materials Science and the Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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23
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Vu TV, Phuc HV, Ahmad S, Nha VQ, Van Lanh C, Rai DP, Kartamyshev AI, Pham KD, Nhan LC, Hieu NN. Outstanding elastic, electronic, transport and optical properties of a novel layered material C 4F 2: first-principles study. RSC Adv 2021; 11:23280-23287. [PMID: 35479814 PMCID: PMC9036559 DOI: 10.1039/d1ra04065k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 06/25/2021] [Indexed: 11/21/2022] Open
Abstract
Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namely fluorinated diamane C4F2) [P. V. Bakharev, M. Huang, M. Saxena, S. W. Lee, S. H. Joo, S. O. Park, J. Dong, D. C. Camacho-Mojica, S. Jin, Y. Kwon, M. Biswal, F. Ding, S. K. Kwak, Z. Lee and R. S. Ruoff, Nat. Nanotechnol., 2020, 15, 59-66], we systematically investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C4F2 by using density functional theory. Our obtained results demonstrate that at the ground state, the lattice constant of C4F2 is 2.56 Å with chemical bonding between the C-C interlayer and intralayer bond lengths of about 1.5 Å which are close to the C-C bonding in the bulk diamond. Based on calculations for the phonon spectrum and ab initio molecular dynamics simulations, the structure of C4F2 is confirmed to be dynamically and thermally stable. C4F2 exhibits superior mechanical properties with a very high Young's modulus of 493.19 N m-1. Upon fluorination, the formation of C-C bonding between graphene layers has resulted in a comprehensive alteration of electronic properties of C4F2. C4F2 is a direct semiconductor with a large band gap and phase transitions are found when a biaxial strain or external electric field is applied. Interestingly, C4F2 has very high electron mobility, up to 3.03 × 103 cm2 V-1 s-1, much higher than other semiconductor compounds. Our findings not only provide a comprehensive insight into the physical properties of C4F2 but also open up its applicability in nanoelectromechanical and optoelectronic devices.
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Affiliation(s)
- Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Viet Nam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Viet Nam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Sohail Ahmad
- Department of Physics, College of Science, King Khalid University P.O. Box 9004 Abha Saudi Arabia
| | - Vo Quang Nha
- School of Engineering and Technology, Hue University Hue Viet Nam
| | - Chu Van Lanh
- Department of Physics, Vinh University 182 Le Duan Vinh City Viet Nam
| | - D P Rai
- Physical Sciences Research Center, Department of Physics, Pachhunga University College, Mizoram University Aizawl 796001 India
| | - A I Kartamyshev
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Viet Nam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Viet Nam
| | - Khang D Pham
- Military Institute of Mechanical Engineering Ha Noi 100000 Viet Nam
| | - Le Cong Nhan
- Department of Environmental Science, Sai Gon University Ho Chi Minh City Viet Nam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Viet Nam
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24
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Tantardini C, Kvashnin AG, Gatti C, Yakobson BI, Gonze X. Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor. ACS NANO 2021; 15:6861-6871. [PMID: 33730478 DOI: 10.1021/acsnano.0c10609] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
To study the possibility for silicene to be employed as a field-effect transistor (FET) pressure sensor, we explore the chemistry of monolayer and multilayered silicene focusing on the change in hybridization under pressure. Ab initio computations show that the effect of pressure depends greatly on the thickness of the silicene film, but also reveals the influence of real experimental conditions, where the pressure is not hydrostatic. For this purpose, we introduce anisotropic strain states. With pure uniaxial stress applied to silicene layers, a path for sp3 silicon to sp3d silicon is found, unlike with pure hydrostatic pressure. Even with mixed-mode stress (in-plane pressure half of the out-of-plane one), we find no such path. In addition to introducing our theoretical approach to study 2D materials, we show how the hybridization change of silicene under pressure makes it a good FET pressure sensor.
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Affiliation(s)
- Christian Tantardini
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
- Institute of Solid State Chemistry and Mechanochemistry SB RAS, 630128 Novosibirsk, Russian Federation
| | - Alexander G Kvashnin
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
| | - Carlo Gatti
- CNR - Consiglio Nazionale delle Ricerche, SCITEC - Istituto di Scienze e Tecnologie Chimiche "Giulio Natta", Sezione di via Golgi, 19, 20133 Milan, Italy
| | - Boris I Yakobson
- Department of Chemistry, Taif University, Al Hawiyah, Taif 26571, Saudi Arabia
- Department of Materials Science and NanoEngineering and the Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
| | - Xavier Gonze
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
- Université Catholique de Louvain, Place de l'Université 1, 1348, Ottignies-Louvain-la-Neuve, Belgium
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25
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Penev ES, Marzari N, Yakobson BI. Theoretical Prediction of Two-Dimensional Materials, Behavior, and Properties. ACS NANO 2021; 15:5959-5976. [PMID: 33823108 DOI: 10.1021/acsnano.0c10504] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Predictive modeling of two-dimensional (2D) materials is at the crossroad of two current rapidly growing interests: 2D materials per se, massively sought after and explored in experimental laboratories, and materials theoretical-computational models in general, flourishing on a fertile mix of condensed-matter physics and chemistry with advancing computational technology. Here the general methods and specific techniques of modeling are briefly overviewed, along with a somewhat philosophical assessment of what "prediction" is, followed by selected practical examples for 2D materials, from structures and properties, to device functionalities and synthetic routes for their making. We conclude with a brief sketch-outlook of future developments.
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Affiliation(s)
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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26
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Shi J, Hu C, Sun S, Song B, Qin QH. Bonding few-layered graphene via collision with high-speed fullerenes. NANOTECHNOLOGY 2021; 32:285704. [PMID: 33831851 DOI: 10.1088/1361-6528/abf5fc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Accepted: 04/08/2021] [Indexed: 06/12/2023]
Abstract
Graphene, as a typical two-dimensional material, is popular in the design of nanodevices. The interlayer relative sliding of graphene sheets can significantly affect the effective bending stiffness of the few-layered graphene. For restricting the relative sliding, we adopted the atomic shot peening method to bond the graphene sheets together by ballistic C60 fullerenes from its two surfaces. Collision effects are evaluated via molecular dynamics simulations. Results obtained indicate that the fullerenes' incident velocity has an interval, in which the graphene sheet can be bonded after collision while no atoms on the fullerenes escaping from the graphene ribbon after collision. The limits of the interval increase with the layer number. Within a few picoseconds of collision, a stable carbon network is produced at an impacted area. The graphene sheets are bonded via the network and cannot slide relatively anymore. Conclusions are drawn to show the way of potential applications of the method in manufacturing a new graphene-based two-dimensional material that has a high out-of-plane bending stiffness.
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Affiliation(s)
- Jiao Shi
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, People's Republic of China
| | - Chunwei Hu
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, People's Republic of China
| | - Sreykeo Sun
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, People's Republic of China
| | - Bo Song
- Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 10081, People's Republic of China
| | - Qing-Hua Qin
- Department of Engineering, Shenzhen MSU-BIT University, Shenzhen 518172, People's Republic of China
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Abstract
The present review focuses on the numerous routes for the preparation of fluorinated graphene (FG) according to the starting materials. Two strategies are considered: (i) addition of fluorine atoms on graphenes of various nature and quality and (ii) exfoliation of graphite fluoride. Chemical bonding in fluorinated graphene, related properties and a selection of applications for lubrication, energy storage, and gas sensing will then be discussed.
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28
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Ge L, Liu H, Wang J, Huang H, Cui Z, Huang Q, Fu Z, Lu Y. Properties of diamane anchored with different groups. Phys Chem Chem Phys 2021; 23:14195-14204. [PMID: 34159999 DOI: 10.1039/d1cp01747k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
The two-dimensional counterpart of diamond, diamane, has attracted increasing interest due to its potentially distinctive properties. In this paper, diamanes anchored with different anion groups have been systematically studied with density functional theory (DFT) for the first time. Among them 12 conformers are confirmed to be stable and present direct semiconductor features with bandgaps ranging from 2.527 eV to 4.153 eV, and the in-plane stiffness is larger than that of graphene. Moreover, the electron carrier mobility of chair2-F is exceptionally high at 16546.713 cm2 V-1 s-1 along the y-direction, which is remarkably larger than that of diamond; and N-, B-doped boat2-H can be doped to have n-, p-type conductivity with a moderate activation energy of 0.34 and 0.37 eV, respectively. This work suggests that functionalized diamanes are promising for electronic devices and engineering materials.
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Affiliation(s)
- Liangbing Ge
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Huan Liu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Jianling Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Haoliang Huang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - ZhangZhang Cui
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Qiuping Huang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Zhengping Fu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Yalin Lu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
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Chepkasov IV, Erohin SV, Sorokin PB. The Features of Phase Stability of GaN and AlN Films at Nanolevel. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 11:E8. [PMID: 33374538 PMCID: PMC7822215 DOI: 10.3390/nano11010008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 12/18/2020] [Accepted: 12/20/2020] [Indexed: 11/17/2022]
Abstract
Recently, two-dimensional gallium and aluminum nitrides have triggered a vast interest in their tunable optical and electronic properties. Continuation of this research requires a detailed understanding of their atomic structure. Here, by using first-principles calculations we reported a systematic study of phase stability of 2D-GaN and 2D-AlN. We showed that the films undergo a phase transition from a graphene-like to a wurtzite structure with a thickness increase, whereas the early reported body-centered-tetragonal phase requires specific conditions for stabilization. Additionally, we studied how the functionalization of the surface can modify the film structure as exemplified by hydrogenation.
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Affiliation(s)
- Ilya V. Chepkasov
- Inorganic Nanomaterials laboratory, National University of Science and Technology “MISIS”, Leninsky Prospect 4, 119049 Moscow, Russia; (I.V.C.); (S.V.E.)
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, 121025 Moscow, Russia
| | - Sergey V. Erohin
- Inorganic Nanomaterials laboratory, National University of Science and Technology “MISIS”, Leninsky Prospect 4, 119049 Moscow, Russia; (I.V.C.); (S.V.E.)
- Department of Structural Research, Technological Institute for Superhard and Novel Carbon Materials, Troitsk, 108840 Moscow, Russia
| | - Pavel B. Sorokin
- Inorganic Nanomaterials laboratory, National University of Science and Technology “MISIS”, Leninsky Prospect 4, 119049 Moscow, Russia; (I.V.C.); (S.V.E.)
- Department of Structural Research, Technological Institute for Superhard and Novel Carbon Materials, Troitsk, 108840 Moscow, Russia
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30
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Erohin SV, Ruan Q, Sorokin PB, Yakobson BI. Nano-Thermodynamics of Chemically Induced Graphene-Diamond Transformation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004782. [PMID: 33107167 DOI: 10.1002/smll.202004782] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Revised: 09/28/2020] [Indexed: 05/27/2023]
Abstract
Nearly 2D diamond, or diamane, is coveted as an ultrathin sp3 -carbon film with unique mechanics and electro-optics. The very thinness (≈h) makes it possible for the surface chemistry, for example, adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure (p/p∞ > 1 - h0 /h) but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene is in AA' stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered.
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Affiliation(s)
- Sergey V Erohin
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
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31
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Zhang T, Zhu L. Sensitively tuning the thermal conductivity of diamane via engineering the mass of functional groups. NANOTECHNOLOGY 2020; 31:435409. [PMID: 32663811 DOI: 10.1088/1361-6528/aba5b8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Sensitively tuned thermal conductivity is highly desired for many practical applications, e.g. thermoelectricity and thermal metamaterials. Our theoretical calculations reveal that the thermal conductivities of functionalized two-dimensional (2D) materials show a rapid response to the increasing mass of functional groups, in which we take the newly synthesized diamane as an example and artificially tune the mass of hydrogen atoms to mimic the surface ligands of different masses. Our results indicate the sensitive influence of the mass of functional groups on the vibration and phonon transport properties of 2D materials. As the mass increases, the phonons are appreciably softened which results in reduced group velocities and the squeezed distribution of phonons in the frequency domain. The latter factor leads to an enlarged phonon-scattering phase space. Consequently, the intensified phonon-phonon scattering combined with the reduced group velocities could make the thermal conductivities decrease by ∼80%. Our findings suggest an intriguing strategy to sensitively tune the thermal conductivities of 2D materials via tailoring the mass of functional groups.
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Affiliation(s)
- Tingting Zhang
- Department of Physics and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an 223300, People's Republic of China
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32
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Ke F, Zhang L, Chen Y, Yin K, Wang C, Tzeng YK, Lin Y, Dong H, Liu Z, Tse JS, Mao WL, Wu J, Chen B. Synthesis of Atomically Thin Hexagonal Diamond with Compression. NANO LETTERS 2020; 20:5916-5921. [PMID: 32578991 DOI: 10.1021/acs.nanolett.0c01872] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Atomically thin diamond, also called diamane, is a two-dimensional carbon allotrope and has attracted considerable scientific interest because of its potential physical properties. However, the successful synthesis of a pristine diamane has up until now not been achieved. We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Resistance, optical absorption, and X-ray diffraction measurements reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to ∼1.0 GPa. Theoretical calculations indicate that a (-2110)-oriented h-diamane is energetically stable and has a lower enthalpy than its few-layer graphene precursor above the transition pressure. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices.
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Affiliation(s)
- Feng Ke
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lingkong Zhang
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yabin Chen
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Ketao Yin
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Chenxu Wang
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
| | - Yan-Kai Tzeng
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Yu Lin
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Zhenxian Liu
- Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - John S Tse
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Wendy L Mao
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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33
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Nebogatikova NA, Antonova IV, Ivanov AI, Demin VA, Kvashnin DG, Olejniczak A, Gutakovskii AK, Kornieieva KA, Renault PLJ, Skuratov VA, Chernozatonskii LA. Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots. NANOTECHNOLOGY 2020; 31:295602. [PMID: 32213679 DOI: 10.1088/1361-6528/ab83b8] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.
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Affiliation(s)
- Nadezhda A Nebogatikova
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk, Russia. Novosibirsk State University, Novosibirsk, Russia
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Analogous Diamondene Nanotube Structure Prediction Based on Molecular Dynamics and First-Principle Calculations. NANOMATERIALS 2020; 10:nano10050846. [PMID: 32353973 PMCID: PMC7711906 DOI: 10.3390/nano10050846] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2020] [Revised: 04/17/2020] [Accepted: 04/22/2020] [Indexed: 01/06/2023]
Abstract
A concentric twin tube (CTT) can be built by placing a carbon nanotube (CNT) in another identical CNT. Different from diamondene nanotubes, a stable CTT has no inter-shell covalent bond. As a prestressed double-walled nanotube, CTT has a lower structural stability at a finite temperature. According to the molecular dynamics and first-principle calculations, (a) CTTs have three types of relaxed configurations. In a type III CTT, the inner tube buckles to produce a V-shaped cross-section, and the outer tube may be convex or concave. (b) The minimal radii of relaxed zigzag and armchair CTTs with concave outer tubes were found. (c) After relaxation, the circumferences and areas of the two tubes in a type III CTT are different from those of the corresponding ideal CNT. The area change rate (A-CR) and circumference change rate (C-CR) of the outer tube are the first-order Gaussian function of the radius of the ideal CNT (which forms the CTT), and tends to be 73.3% of A-CR or 95.3% of C-CR, respectively. For the inner tube of a CTT, the A-CR is between 29.3% and 37.0%, and the C-CR is close to 95.8%. (d) The temperature slightly influences the findings given above.
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Huang M, Bakharev PV, Wang ZJ, Biswal M, Yang Z, Jin S, Wang B, Park HJ, Li Y, Qu D, Kwon Y, Chen X, Lee SH, Willinger MG, Yoo WJ, Lee Z, Ruoff RS. Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil. NATURE NANOTECHNOLOGY 2020; 15:289-295. [PMID: 31959931 DOI: 10.1038/s41565-019-0622-8] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2018] [Accepted: 12/10/2019] [Indexed: 06/10/2023]
Abstract
High-quality AB-stacked bilayer or multilayer graphene larger than a centimetre has not been reported. Here, we report the fabrication and use of single-crystal Cu/Ni(111) alloy foils with controllable concentrations of Ni for the growth of large-area, high-quality AB-stacked bilayer and ABA-stacked trilayer graphene films by chemical vapour deposition. The stacking order, coverage and uniformity of the graphene films were evaluated by Raman spectroscopy and transmission electron microscopy including selected area electron diffraction and atomic resolution imaging. Electrical transport (carrier mobility and band-gap tunability) and thermal conductivity (the bilayer graphene has a thermal conductivity value of about 2,300 W m-1 K-1) measurements indicated the superior quality of the films. The tensile loading response of centimetre-scale bilayer graphene films supported by a 260-nm thick polycarbonate film was measured and the average values of the Young's modulus (478 GPa) and fracture strength (3.31 GPa) were obtained.
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Affiliation(s)
- Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Pavel V Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zhu-Jun Wang
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zheng Yang
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Hyo Ju Park
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Yunqing Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Deshun Qu
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Xianjue Chen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Marc-Georg Willinger
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- Department of Chemistry, UNIST, Ulsan, Republic of Korea.
- School of Energy and Chemical Engineering, UNIST, Ulsan, Republic of Korea.
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Niu C, Cheng Y, Yang K, Zhang J, Zhang H, Zeng Z, Wang X. Boron-dopant enhanced stability of diamane with tunable band gap. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:135503. [PMID: 31805547 DOI: 10.1088/1361-648x/ab5f37] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The structural, electronic, and superconducting properties of B-doped cubic and hexagonal diamane (single layer diamond) were investigated based on the first-principles methods. B atom tends to stay in the substitutional site, and the most stable configuration is the structure with vertical B-B dimer. The formation energy of B-doped diamane is lower than the counterpart of pristine diamane indicating that B dopant can facilitate the synthesis of diamane. The configurations with vertical B-B dimers are semiconductors with tunable band gaps, which decrease with the B concentration increasing due to the interaction between B-B dimers. For example, the band gap of 3.125 mol% and 6.25 mol% B-doped cubic diamane is 1.82 eV and 1.44 eV, respectively. Moreover, configurations with meta-stable B distributions are metals, which have comparable superconducting transition temperatures with B-doped diamond (~4 K).
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Affiliation(s)
- Caoping Niu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China. University of Science and Technology of China, Hefei 230026, People's Republic of China
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A Novel Design and Fabrication of Ascorbic Acid Sensitive Biosensor Based on Combination of HAP/rGO/AuNPs Composite and Ascorbate Oxidase. J CLUST SCI 2020. [DOI: 10.1007/s10876-019-01647-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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38
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Bakharev PV, Huang M, Saxena M, Lee SW, Joo SH, Park SO, Dong J, Camacho-Mojica DC, Jin S, Kwon Y, Biswal M, Ding F, Kwak SK, Lee Z, Ruoff RS. Chemically induced transformation of chemical vapour deposition grown bilayer graphene into fluorinated single-layer diamond. NATURE NANOTECHNOLOGY 2020; 15:59-66. [PMID: 31819243 DOI: 10.1038/s41565-019-0582-z] [Citation(s) in RCA: 83] [Impact Index Per Article: 20.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 10/26/2019] [Indexed: 05/09/2023]
Abstract
Notwithstanding the numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film carried out to date, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene grown by chemical vapour deposition on a single-crystal CuNi(111) surface triggers the formation of interlayer carbon-carbon bonds, resulting in a fluorinated diamond monolayer ('F-diamane'). Induced by fluorine chemisorption, the phase transition from (AB)-stacked bilayer graphene to single-layer diamond was studied and verified by X-ray photoelectron, UV photoelectron, Raman, UV-Vis and electron energy loss spectroscopies, transmission electron microscopy and density functional theory calculations.
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Affiliation(s)
- Pavel V Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Manav Saxena
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- Centre for Nano Material Sciences, Jain University, Karnataka, India
| | - Suk Woo Lee
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Se Hun Joo
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Sung O Park
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Jichen Dong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Dulce C Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Sang Kyu Kwak
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
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Wang L, Zhang R, Shi J, Cai K. Vibration behavior of diamondene nano-ribbon passivated by hydrogen. Sci Rep 2019; 9:15783. [PMID: 31673112 PMCID: PMC6823498 DOI: 10.1038/s41598-019-52343-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2019] [Accepted: 10/10/2019] [Indexed: 11/28/2022] Open
Abstract
Diamondene is a new kind of two dimensional carbon allotrope with excellent properties and passivation approaches are often used to reduce the extremely high pressure required during its fabrication. When a one-end-clamped diamondene ribbon is hydrogenated on one surface, the ribbon tends to bend and vibrate due to asymmetric layout of C-H bonds on two surfaces. In the present work, the vibration behavior, including natural curvatures and vibration frequencies of diamondene ribbons, were investigated by molecular dynamics simulations. Results indicate that the natural curvature radius of a narrow diamondene ribbon is close to 12.17 nm at a temperature below 150 K, which is essential for fabricating an arc nanodevice. The first order frequency (f1) of a cantilever beam made from the ribbon follows traditional beam vibration theory if the slenderness ratio is low. In particular, f1 increases logarithmically at temperature below 50 K, but changes slightly between 50 K and 150 K. It suggests a design scheme for a nanoresonator with temperature-controlled frequency.
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Affiliation(s)
- Lei Wang
- Department of Engineering Mechanics, College of Mechanics and Materials, Hohai University, Nanjing, 211100, China
| | - Ranran Zhang
- Department of Engineering Mechanics, College of Mechanics and Materials, Hohai University, Nanjing, 211100, China
| | - Jiao Shi
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling, 712100, China.,State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
| | - Kun Cai
- Centre for Innovative Structures and Materials, School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia.
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Wu P, Shi J, Wang J, Shen J, Cai K. Critical Output Torque of a GHz CNT-Based Rotation Transmission System Via Axial Interface Friction at Low Temperature. Int J Mol Sci 2019; 20:ijms20163851. [PMID: 31394762 PMCID: PMC6720778 DOI: 10.3390/ijms20163851] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2019] [Revised: 07/20/2019] [Accepted: 07/21/2019] [Indexed: 11/16/2022] Open
Abstract
It was discovered that a sudden jump of the output torque moment from a rotation transmission nanosystem made from carbon nanotubes (CNTs) occurred when decreasing the system temperature. In the nanosystem from coaxial-layout CNTs, the motor with specified rotational frequency (ωM) can drive the inner tube (rotor) to rotate in the outer tubes. When the axial gap between the motor and the rotor was fixed, the friction between their neighbor edges was stronger at a lower temperature. Especially at temperatures below 100 K, the friction-induced driving torque increases with ωM. When the rotor was subjected to an external resistant torque moment (Mr), it could not rotate opposite to the motor even if it deformed heavily. Combining molecular dynamics simulations with the bi-sectioning algorithm, the critical value of Mr was obtained. Under the critical torque moment, the rotor stopped rotating. Accordingly, a transmission nanosystem can be designed to provide a strong torque moment via interface friction at low temperature.
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Affiliation(s)
- Puwei Wu
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, China
| | - Jiao Shi
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, China.
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China.
| | - Jinbao Wang
- School of Port and Transportation Engineering, Zhejiang Ocean University, Zhoushan 316022, China
| | - Jianhu Shen
- Centre for Innovative Structures and Materials, RMIT University, Melbourne 3083, Australia
| | - Kun Cai
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling 712100, China.
- Centre for Innovative Structures and Materials, RMIT University, Melbourne 3083, Australia.
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41
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Zhu L, Li W, Ding F. Giant thermal conductivity in diamane and the influence of horizontal reflection symmetry on phonon scattering. NANOSCALE 2019; 11:4248-4257. [PMID: 30623946 DOI: 10.1039/c8nr08493a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Diamane, a chemically derived two-dimensional material, shows many superior physical and chemical properties similar to diamond thin films. Through the Peierls-Boltzmann transport equation, we reveal giant thermal conductivity in diamane with a stacking order of both AB and AA (respectively, abbreviated as D-AB and D-AA, hereafter) which are both comparable to that of diamond. Like in graphene, the phonon transport falls into the hydrodynamic regime even at room temperature, and the major contribution to the total thermal conductivity comes from the out-of-plane acoustic phonon modes (>40%). In addition, the thermal conductivity shows a dependence on the stacking order, namely, the thermal conductivity of D-AA, ∼2240 W m-1 K-1 at 300 K, is around 15% larger than that of D-AB, which is due to the strong restriction on the phonon scattering phase space induced by the horizontal reflection symmetry in D-AA. Such a kind of restriction, not limited to single atomic plane systems, is a general feature in two-dimensional materials with a horizontal reflection symmetry.
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Affiliation(s)
- Liyan Zhu
- Department of Physics, Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an, People's Republic of China
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42
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Gupta S, Yang JH, Yakobson BI. Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission. NANO LETTERS 2019; 19:408-414. [PMID: 30532982 DOI: 10.1021/acs.nanolett.8b04159] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emission (SPE) by a solid-state source requires presence of a distinct two-level quantum system, usually provided by point defects. Here we note that a number of qualities offered by novel, two-dimensional materials, their all-surface openness and optical transparence, tighter quantum confinement, and reduced charge screening-are advantageous for achieving an ideal SPE. On the basis of first-principles calculations and point-group symmetry analysis, a strategy is proposed to design paramagnetic defect complex with reduced symmetry, meeting all the requirements for SPE: its electronic states are well isolated from the host material bands, belong to a majority spin eigenstate, and can be controllably excited by polarized light. The defect complex is thermodynamically stable and appears feasible for experimental realization to serve as an SPE-source, essential for quantum computing, with ReMoVS in MoS2 as one of the most practical candidates.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Ji-Hui Yang
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
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Xu R, Gao N, Li H, Qiu D, Wang Q, Cheng S. Two dimensional monolayer rhombic silicene on the diamond (111) surface. Phys Chem Chem Phys 2018; 20:21699-21704. [PMID: 30101234 DOI: 10.1039/c8cp03624a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional rhombic silicene (named r-silicene) bonded on the diamond (111) surface with a (1 × 1) configuration is predicted by density functional theory. The planar structure of r-silicene has P6/mmm symmetry, and it is dynamically and thermodynamically stable on the diamond surface. r-Silicene has a metallic character, which is different to both bulk cubic Si and hexagonal silicene. The hybrid structure of r-silicene/diamond consists of a metallic surface and a wide band gap semiconductor diamond substrate, providing a novel low-dimensional composite based on silicon-diamond to realize high performance nanodevices. Moreover, a similar rhombic configuration of monolayer germanene has been theoretically constructed on the diamond (111) substrate.
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Affiliation(s)
- Rui Xu
- State Key Lab of Superhard Materials, Jilin University, Changchun 130012, P. R. China.
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44
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Excitation-driven non-thermal conversion of few-layer graphenes into sp3-bonded carbon nanofilms. Chem Phys Lett 2018. [DOI: 10.1016/j.cplett.2018.01.020] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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45
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Gao Y, Cao T, Cellini F, Berger C, de Heer WA, Tosatti E, Riedo E, Bongiorno A. Ultrahard carbon film from epitaxial two-layer graphene. NATURE NANOTECHNOLOGY 2018; 13:133-138. [PMID: 29255290 DOI: 10.1038/s41565-017-0023-9] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2017] [Accepted: 11/03/2017] [Indexed: 06/07/2023]
Abstract
Atomically thin graphene exhibits fascinating mechanical properties, although its hardness and transverse stiffness are inferior to those of diamond. So far, there has been no practical demonstration of the transformation of multilayer graphene into diamond-like ultrahard structures. Here we show that at room temperature and after nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness comparable to diamond, is resistant to perforation with a diamond indenter and shows a reversible drop in electrical conductivity upon indentation. Density functional theory calculations suggest that, upon compression, the two-layer graphene film transforms into a diamond-like film, producing both elastic deformations and sp 2 to sp 3 chemical changes. Experiments and calculations show that this reversible phase change is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers. Indeed, calculations show that whereas in two-layer graphene layer-stacking configuration controls the conformation of the diamond-like film, in a multilayer film it hinders the phase transformation.
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Affiliation(s)
- Yang Gao
- Advanced Science Research Center, City University of New York, New York, NY, USA
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
| | - Tengfei Cao
- Advanced Science Research Center, City University of New York, New York, NY, USA
- Department of Chemistry, College of Staten Island, City University of New York, Staten Island, NY, USA
| | - Filippo Cellini
- Advanced Science Research Center, City University of New York, New York, NY, USA
| | - Claire Berger
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
- Institut Néel, CNRS- University Grenoble-Alpes, Grenoble, France
| | - Walter A de Heer
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
- TICNN, Tianjin University, Tianjin, China
| | - Erio Tosatti
- Abdus Salam ICTP, Trieste, Italy
- SISSA, Trieste, Italy
| | - Elisa Riedo
- Advanced Science Research Center, City University of New York, New York, NY, USA.
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA.
- Physics Department, City College of New York, City University of New York, New York, NY, USA.
- CUNY Graduate Center, Ph.D. Program in Physics, New York, NY, USA.
| | - Angelo Bongiorno
- Department of Chemistry, College of Staten Island, City University of New York, Staten Island, NY, USA.
- CUNY Graduate Center, Ph.D. Program in Physics, New York, NY, USA.
- CUNY Graduate Center, Ph.D. Program in Chemistry, New York, NY, USA.
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46
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Martins LGP, Matos MJS, Paschoal AR, Freire PTC, Andrade NF, Aguiar AL, Kong J, Neves BRA, de Oliveira AB, Mazzoni MSC, Filho AGS, Cançado LG. Raman evidence for pressure-induced formation of diamondene. Nat Commun 2017; 8:96. [PMID: 28733614 PMCID: PMC5522393 DOI: 10.1038/s41467-017-00149-8] [Citation(s) in RCA: 103] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2016] [Revised: 11/02/2016] [Accepted: 06/06/2017] [Indexed: 11/09/2022] Open
Abstract
Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens.The synthesis of two-dimensional diamond is the ultimate goal of diamond thin-film technology. Here, the authors perform Raman spectroscopy of bilayer graphene under pressure, and obtain spectroscopic evidence of formation of diamondene, an atomically thin form of diamond.
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Affiliation(s)
- Luiz Gustavo Pimenta Martins
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil.,Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Matheus J S Matos
- Departamento de Física, Universidade Federal de Ouro Preto, Ouro Preto, MG, 35400-000, Brazil
| | - Alexandre R Paschoal
- Departamento de Física, Universidade Federal do Ceará, Fortaleza, CE, 60455-900, Brazil
| | - Paulo T C Freire
- Departamento de Física, Universidade Federal do Ceará, Fortaleza, CE, 60455-900, Brazil
| | - Nadia F Andrade
- Instituto Federal de Educação, Ciência e Tecnologia do Ceará, Tianguá, CE, 62320-000, Brazil
| | - Acrísio L Aguiar
- Departamento de Física, Universidade Federal do Piauí, Teresina, PI, 64049-550, Brazil
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Bernardo R A Neves
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
| | - Alan B de Oliveira
- Departamento de Física, Universidade Federal de Ouro Preto, Ouro Preto, MG, 35400-000, Brazil
| | - Mário S C Mazzoni
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
| | - Antonio G Souza Filho
- Departamento de Física, Universidade Federal do Ceará, Fortaleza, CE, 60455-900, Brazil
| | - Luiz Gustavo Cançado
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil.
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Lin C, Davami K, Jiang Y, Cortes J, Munther M, Shaygan M, Ghassemi H, Robinson JT, Turner KT, Bargatin I. Enhancing the stiffness of vertical graphene sheets through ion beam irradiation and fluorination. NANOTECHNOLOGY 2017; 28:295701. [PMID: 28557804 DOI: 10.1088/1361-6528/aa75ac] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Many applications of graphene can benefit from the enhanced mechanical robustness of graphene-based components. We report how the stiffness of vertical graphene (VG) sheets is affected by the introduction of defects and fluorination, both separately and combined. The defects were created using a high-energy ion beam while fluorination was performed in a XeF2 etching system. After ion bombardment alone, the average effective reduced modulus (E r), equal to ∼4.9 MPa for the as-grown VG sheets, approximately doubled to ∼10.0 MPa, while fluorination alone almost quadrupled it to ∼18.4 MPa. The maximum average E r of ∼32.4 MPa was achieved by repeatedly applying fluorination and ion bombardment. This increase can be explained by the formation of covalent bonds between the VG sheets due to ion bombardment, as well as the conversion from sp2 to sp3 and increased corrugation due to fluorination.
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Affiliation(s)
- Chen Lin
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, United States of America
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48
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Kvashnin DG, Kvashnina OP, Avramov PV, Sorokin PB, Kvashnin AG. Novel hybrid C/BN two-dimensional heterostructures. NANOTECHNOLOGY 2017; 28:085205. [PMID: 28114121 DOI: 10.1088/1361-6528/aa55e9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.
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Affiliation(s)
- Dmitry G Kvashnin
- Emanuel Institute of Biochemical Physics, Russian Academy of Science, 4 Kosigin Street, Moscow, 119334, Russian Federation. National University of Science and Technology MISiS, 4 Leninskiy Prospekt, Moscow, 119049, Russian Federation
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49
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Kvashnin AG, Oganov AR, Samtsevich AI, Allahyari Z. Computational Search for Novel Hard Chromium-Based Materials. J Phys Chem Lett 2017; 8:755-764. [PMID: 28103665 DOI: 10.1021/acs.jpclett.6b02821] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nitrides, carbides, and borides of transition metals are an attractive class of hard materials. Our recent preliminary explorations of the binary chemical compounds indicated that chromium-based materials are among the hardest transition metal compounds. Motivated by this, here we explore in detail the binary Cr-B, Cr-C, and Cr-N systems using global optimization techniques. Calculated enthalpy of formation and hardness of predicted materials were used for Pareto optimization to define the hardest materials with the lowest energy. Our calculations recover all numerous known stable compounds (except Cr23C6 with its large unit cell) and discover a novel stable phase Pmn21-Cr2C. We resolve the structure of Cr2N and find it to be of anti-CaCl2 type (space group Pnnm). Many of these phases possess remarkable hardness, but only CrB4 is superhard (Vickers hardness 48 GPa). Among chromium compounds, borides generally possess the highest hardnesses and greatest stability. Under pressure, we predict stabilization of a layered TMDC-like phase of Cr2N, a WC-type phase of CrN, and a new compound CrN4. Nitrogen-rich chromium nitride CrN4 is a high-energy-density material featuring polymeric nitrogen chains. In the presence of metal atoms (e.g., Cr), polymerization of nitrogen takes place at much lower pressures; CrN4 becomes stable at ∼15 GPa (cf. 110 GPa for synthesis of pure polymeric nitrogen).
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Affiliation(s)
- Alexander G Kvashnin
- Skolkovo Institute of Science and Technology , Skolkovo Innovation Center, 3 Nobel Street, Moscow 143026, Russian Federation
- Moscow Institute of Physics and Technology , 9 Institutsky Lane, Dolgoprudny 141700, Russian Federation
| | - Artem R Oganov
- Skolkovo Institute of Science and Technology , Skolkovo Innovation Center, 3 Nobel Street, Moscow 143026, Russian Federation
- Moscow Institute of Physics and Technology , 9 Institutsky Lane, Dolgoprudny 141700, Russian Federation
- Department of Geosciences and Center for Materials by Design, Institute for Advanced Computational Science, State University of New York , Stony Brook, New York 11794-2100, United States
- International Center for Materials Design, Northwestern Polytechnical University , Xi'an 710072, China
| | - Artem I Samtsevich
- Skolkovo Institute of Science and Technology , Skolkovo Innovation Center, 3 Nobel Street, Moscow 143026, Russian Federation
| | - Zahed Allahyari
- Skolkovo Institute of Science and Technology , Skolkovo Innovation Center, 3 Nobel Street, Moscow 143026, Russian Federation
- Moscow Institute of Physics and Technology , 9 Institutsky Lane, Dolgoprudny 141700, Russian Federation
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50
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Liu ZL, Jia H, Li R, Zhang XL, Cai LC. Unexpected coordination number and phase diagram of niobium diselenide under compression. Phys Chem Chem Phys 2017; 19:13219-13229. [DOI: 10.1039/c7cp00805h] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We discovered several new high-pressure structures of NbSe2 with unexpected coordination number and constructed its high pressure and temperature phase diagram based on quasi-harmonic approximation.
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Affiliation(s)
- Zhong-Li Liu
- College of Physics and Electric Information
- Luoyang Normal University
- Luoyang 471022
- China
| | - Hong Jia
- College of Physics and Electric Information
- Luoyang Normal University
- Luoyang 471022
- China
| | - Rui Li
- College of Physics and Electric Information
- Luoyang Normal University
- Luoyang 471022
- China
| | - Xiu-Lu Zhang
- Laboratory for Extreme Conditions Matter Properties
- Southwest University of Science and Technology
- 621010 Mianyang
- China
| | - Ling-Cang Cai
- Laboratory for Shock Wave and Detonation Physics Research
- Institute of Fluid Physics
- 621900 Mianyang
- China
| |
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