Effect of interface atomic structure on the electronic properties of nano-sized metal-oxide interfaces

Measuring and directing charge transfer in heterogenous catalysts

Precise control of charge transfer between catalyst nanoparticles and supports presents a unique opportunity to enhance the stability, activity, and selectivity of heterogeneous catalysts. While charge transfer is tunable using the atomic structure and chemistry of the catalyst-support interface, direct experimental evidence is missing for three-dimensional catalyst nanoparticles, primarily due to the lack of a high-resolution method that can probe and correlate both the charge distribution and atomic structure of catalyst/support interfaces in these structures. We demonstrate a robust scanning transmission electron microscopy (STEM) method that simultaneously visualizes the atomic-scale structure and sub-nanometer-scale charge distribution in heterogeneous catalysts using a model Au-catalyst/SrTiO₃-support system. Using this method, we further reveal the atomic-scale mechanisms responsible for the highly active perimeter sites and demonstrate that the charge transfer behavior can be readily controlled using post-synthesis treatments. This methodology provides a blueprint for better understanding the role of charge transfer in catalyst stability and performance and facilitates the future development of highly active advanced catalysts.

Configuration-Controllable Polymeric Nanovehicles Self-Assembled in Pixel Grids under an Electric Field

Polymeric nanovehicles have been widely applied in many fields, but during the process of preparation, it is still hard to reach the balance between precise structure control and mass production. In the present work, using industrial pixel grids as the macroscopic template, we applied dual effects of confinement and dielectric difference to speed up the self-assembly of polymeric nanovehicles, even to regulate the generated mesostructures and cargo loading. Within 2 min, a poly(ethylene glycol)-block-poly(d,l-lactide acid) (PEG-b-PDLLA) amphiphilic block copolymer layer was rapidly pushed off and broken down into uniform nanoparticles at 40 V. Hereinto, increasing volume of the outer aqueous phase in pixel grids favored the architectonic transformation of the generated nanovehicles from solid micelles with a diameter of 95 nm to hollow vesicles with a diameter of 232 nm. In particular, all the elements from the confinement cells to the preparation process can be completed via wet printing. Electric-field-induced pixel template technology is facile, cheap, controllable, and recyclable, and it is anticipated to promote continuous and bulk production of polymeric nanovehicles.

Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst-ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal-semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal-nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal-support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au-nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I-V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I-V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au-nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au-nanowire systems cannot presently deliver.

Schottky barrier engineering via adsorbing gases at the sulfur vacancies in the metal-MoS2 interface

Sulfur vacancies (S-vacancies) are common in monolayer MoS₂ (mMoS₂). Finding an effective way to control rather than abolish the effect of S-vacancies on contact properties is vital for the application of mMoS₂. Here, we propose the adsorption of gases to passivate the S-vacancies in Pt-mMoS₂ interfaces. Results demonstrate that gases are stably and preferentially adsorbed at S-vacancies. The n-type Schottky barriers of Pt-mMoS₂ interfaces are reduced significantly upon the adsorption electron-donor gases, especially Cl₂. The n-type transport character of the Pt-mMoS₂ interface can be changed to p-type by the adsorption of electron-acceptor gases. As the adsorption concentration increases, both n- and p-type Schottky barriers are further reduced, and the lowest n- and p-type Schottky barriers are 0.36 and 0 eV, respectively. Note that the variations in Schottky barriers are independent of the oxidizing ability of gases but relative to the average number of valence electrons per gas atom. Analysis demonstrates that although gases at S-vacancies cannot cause gap states to vanish, and can even enhance Fermi level pinning, they modulate charge redistribution and the potential step at the interface region. Moreover, with increasing adsorption concentration, the valence band maximum of mMoS₂ shows the opposite variation tendency to that of the potential step. Our results suggest that adsorption of gases is an effective way to passivate S-vacancies to modulate the transport properties of Pt-mMoS₂ interfaces.

Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.

Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure

The Schottky barrier of the Pt/TiO₂ interface depends strongly on both the interfacial stain and structure.

Oxygen vacancies at the Au/SrTiO3(001) interface: stabilities, electronic properties and effect on photocatalysis

Oxygen vacancies have proven to induce various and important effects on the properties of materials. In the present work, the thermodynamic stabilities and electronic properties of oxygen vacancies (Ov) on the SrTiO₃ (STO)(001) surface and at the Au/STO(001) interface are systematically investigated by means of first-principles calculations. Both the SrO and TiO₂ terminated (001) surfaces of STO are examined. It is found that the Ov located in the near-surface region of the two surfaces can be divided into three categories according to their properties: Ov in the surface atomic layer, Ov in the subsurface TiO₂ atomic layers, and Ov in the subsurface SrO atomic layers. Counter-intuitively, for the SrO terminated surface the most stable site of Ov is in the first subsurface atomic layer. The Au metal in the Au/STO heterostructure significantly promotes the formation of Ov at and near the interface and thermodynamically promotes migration of Ov to the interfacial atomic layer. Furthermore, the interface Schottky barrier height is highly sensitive to both the concentration and position of Ov at the interface. These results are beneficial for the atomic-level understanding of the performance of STO-based photocatalysts and the rational design of more efficient ones.

Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3-x memristors

Donor doping of perovskite oxides has emerged as an attractive technique to create high performance and low energy non-volatile analog memories. Here, we examine the origins of improved switching performance and stable multi-state resistive switching in Nb-doped oxygen-deficient amorphous SrTiO₃ (Nb:a-STO _x ) metal-insulator-metal (MIM) devices. We probe the impact of substitutional dopants (i.e., Nb) in modulating the electronic structure and subsequent switching performance. Temperature stability and bias/time dependence of the switching behavior are used to ascertain the role of substitutional dopants and highlight their utility to modulate volatile and non-volatile behavior in a-STO _x devices for adaptive and neuromorphic applications. We utilized a combination of transmission electron microscopy, photoluminescence emission properties, interfacial compositional evaluation, and activation energy measurements to investigate the microstructure of the nanofilamentary network responsible for switching. These results provide important insights into understanding mechanisms that govern the performance of donor-doped perovskite oxide-based memristive devices.

Strain-Mediated Interfacial Dynamics during Au-PbS Core-Shell Nanostructure Formation

An understanding of the hierarchical nanostructure formation is of significant importance for the design of advanced functional materials. Here, we report the in situ study of lead sulfide (PbS) growth on gold (Au) nanorod seeds using liquid cell transmission electron microscopy (TEM). By tracking the formation dynamics of Au-PbS core-shell nanoparticles, we found the preferential heterogeneous nucleation of PbS on the ends of a Au nanorod prior to the development of a complete PdS shell. During PbS shell growth, drastic sulfidation of Au nanorod was observed, leading to large volume shrinkage (up to 50%) of the initial Au nanorod seed. We also captured intriguing wavy interfacial behavior, which can be explained by our DFT calculation results that the local strain gradient at the core-shell interface facilitates the mass transport and mediates reversible phase transitions of Au ↔ Au2S during the PbS shell growth.

Interface Schottky barrier engineering via strain in metal-semiconductor composites

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.

Controlling the Electrical Transport Properties of Nanocontacts to Nanowires

The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices. Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schottky to Ohmic depending on the size of the Au particles in relation to the cross-sectional width of the ZnO nanowires. We observe a distinct Schottky to Ohmic transition in transport behavior at an Au to nanowire diameter ratio of 0.6. The current-voltage electrical measurements performed with a multiprobe instrument are explained using 3-D self-consistent electrostatic and transport simulations revealing that tunneling at the contact edge is the dominant carrier transport mechanism for these nanoscale contacts. The results are applicable to other nanowire materials such as Si, GaAs, and InAs when the effects of surface charge and contact size are considered.