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Zachman MJ, Fung V, Polo-Garzon F, Cao S, Moon J, Huang Z, Jiang DE, Wu Z, Chi M. Measuring and directing charge transfer in heterogenous catalysts. Nat Commun 2022; 13:3253. [PMID: 35668115 PMCID: PMC9170698 DOI: 10.1038/s41467-022-30923-2] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Accepted: 05/19/2022] [Indexed: 11/09/2022] Open
Abstract
Precise control of charge transfer between catalyst nanoparticles and supports presents a unique opportunity to enhance the stability, activity, and selectivity of heterogeneous catalysts. While charge transfer is tunable using the atomic structure and chemistry of the catalyst-support interface, direct experimental evidence is missing for three-dimensional catalyst nanoparticles, primarily due to the lack of a high-resolution method that can probe and correlate both the charge distribution and atomic structure of catalyst/support interfaces in these structures. We demonstrate a robust scanning transmission electron microscopy (STEM) method that simultaneously visualizes the atomic-scale structure and sub-nanometer-scale charge distribution in heterogeneous catalysts using a model Au-catalyst/SrTiO3-support system. Using this method, we further reveal the atomic-scale mechanisms responsible for the highly active perimeter sites and demonstrate that the charge transfer behavior can be readily controlled using post-synthesis treatments. This methodology provides a blueprint for better understanding the role of charge transfer in catalyst stability and performance and facilitates the future development of highly active advanced catalysts.
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Affiliation(s)
- Michael J Zachman
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
| | - Victor Fung
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.,Department of Chemistry, University of California, Riverside, CA, 92521, USA
| | - Felipe Polo-Garzon
- Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shaohong Cao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jisue Moon
- Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Zhennan Huang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - De-En Jiang
- Department of Chemistry, University of California, Riverside, CA, 92521, USA
| | - Zili Wu
- Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Miaofang Chi
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
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2
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Wang F, Li J, Lu L, Yan X, Xie Z, Qi D. Novel Strategy for the Synthesis of Polymer/Pigment Hybrid Latex via Sulfur-Free RAFT-Mediated Emulsion Polymerization. Ind Eng Chem Res 2022. [DOI: 10.1021/acs.iecr.1c04757] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
Affiliation(s)
- Fenping Wang
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Jiawei Li
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Lin Lu
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Xiaofei Yan
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Ziwen Xie
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Dongming Qi
- Zhejiang Provincial Engineering Research Center for Green and Low-carbon Dyeing & Finishing, Zhejiang Sci-Tech University, Hangzhou 310018, China
- Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education of the People’s Republic of China, Zhejiang Sci-Tech University, Hangzhou 310018, China
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3
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Liu J, Zhang J. Nanointerface Chemistry: Lattice-Mismatch-Directed Synthesis and Application of Hybrid Nanocrystals. Chem Rev 2020; 120:2123-2170. [DOI: 10.1021/acs.chemrev.9b00443] [Citation(s) in RCA: 106] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Jia Liu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiatao Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, P.R. China
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4
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Mu X, Hou J, Feng Y, Tang B, Shui L, Wang Y, Li H, Zhou G. Configuration-Controllable Polymeric Nanovehicles Self-Assembled in Pixel Grids under an Electric Field. ACS APPLIED MATERIALS & INTERFACES 2020; 12:4052-4060. [PMID: 31885247 DOI: 10.1021/acsami.9b16290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Polymeric nanovehicles have been widely applied in many fields, but during the process of preparation, it is still hard to reach the balance between precise structure control and mass production. In the present work, using industrial pixel grids as the macroscopic template, we applied dual effects of confinement and dielectric difference to speed up the self-assembly of polymeric nanovehicles, even to regulate the generated mesostructures and cargo loading. Within 2 min, a poly(ethylene glycol)-block-poly(d,l-lactide acid) (PEG-b-PDLLA) amphiphilic block copolymer layer was rapidly pushed off and broken down into uniform nanoparticles at 40 V. Hereinto, increasing volume of the outer aqueous phase in pixel grids favored the architectonic transformation of the generated nanovehicles from solid micelles with a diameter of 95 nm to hollow vesicles with a diameter of 232 nm. In particular, all the elements from the confinement cells to the preparation process can be completed via wet printing. Electric-field-induced pixel template technology is facile, cheap, controllable, and recyclable, and it is anticipated to promote continuous and bulk production of polymeric nanovehicles.
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Affiliation(s)
- Xin Mu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Jiaxin Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Yancong Feng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Biao Tang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Lingling Shui
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
- National Center for International Research on Green Optoelectronics , South China Normal University , Guangzhou 510006 , China
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5
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Li X, Iocozzia J, Chen Y, Zhao S, Cui X, Wang W, Yu H, Lin S, Lin Z. From Precision Synthesis of Block Copolymers to Properties and Applications of Nanoparticles. Angew Chem Int Ed Engl 2018; 57:2046-2070. [DOI: 10.1002/anie.201705019] [Citation(s) in RCA: 107] [Impact Index Per Article: 17.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2017] [Revised: 08/03/2017] [Indexed: 11/06/2022]
Affiliation(s)
- Xiao Li
- Department of Material Science and Engineering, and Key Laboratory of Polymer Chemistry and Physics of the, Ministry of Education Peking University Beijing 100871 P.R. China
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - James Iocozzia
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Yihuang Chen
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Shiqiang Zhao
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Xun Cui
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Wei Wang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
- Shanghai Key Laboratory of Advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and Engineering East China University of Science and Technology Shanghai 200237 P.R. China
| | - Haifeng Yu
- Department of Material Science and Engineering, and Key Laboratory of Polymer Chemistry and Physics of the, Ministry of Education Peking University Beijing 100871 P.R. China
| | - Shaoliang Lin
- Shanghai Key Laboratory of Advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and Engineering East China University of Science and Technology Shanghai 200237 P.R. China
| | - Zhiqun Lin
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
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6
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Li X, Iocozzia J, Chen Y, Zhao S, Cui X, Wang W, Yu H, Lin S, Lin Z. Von der Präzisionssynthese von Blockcopolymeren zu Eigenschaften und Anwendungen von funktionellen Nanopartikeln. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201705019] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Xiao Li
- Department of Material Science and Engineering und Key Laboratory of Polymer Chemistry and Physics of the, Ministry of Education Peking University Beijing 100871 Volksrepublik China
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - James Iocozzia
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Yihuang Chen
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Shiqiang Zhao
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Xun Cui
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
| | - Wei Wang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
- Shanghai Key Laboratory of Advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and Engineering East China University of Science and Technology Shanghai 200237 Volksrepublik China
| | - Haifeng Yu
- Department of Material Science and Engineering und Key Laboratory of Polymer Chemistry and Physics of the, Ministry of Education Peking University Beijing 100871 Volksrepublik China
| | - Shaoliang Lin
- Shanghai Key Laboratory of Advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and Engineering East China University of Science and Technology Shanghai 200237 Volksrepublik China
| | - Zhiqun Lin
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
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7
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Lord AM, Ramasse QM, Kepaptsoglou DM, Periwal P, Ross FM, Wilks SP. Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires. NANO LETTERS 2017; 17:6626-6636. [PMID: 29024594 DOI: 10.1021/acs.nanolett.7b02561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst-ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal-semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal-nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal-support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au-nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I-V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I-V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au-nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au-nanowire systems cannot presently deliver.
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Affiliation(s)
- Alex M Lord
- Centre for NanoHealth, College of Engineering, University of Swansea , Singleton Park SA2 8PP, United Kingdom
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD, United Kingdom
| | - Despoina M Kepaptsoglou
- SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD, United Kingdom
| | - Priyanka Periwal
- Department of Electrical Engineering, University of Cambridge , Cambridge CB0 3FA, United Kingdom
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States of America
| | - Frances M Ross
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States of America
| | - Steve P Wilks
- Multidisciplinary Nanotechnology Centre, Department of Physics, College of Science, University of Swansea , Singleton Park, SA2 8PP, United Kingdom
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8
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Su J, Feng L, Zhang Y, Liu Z. Schottky barrier engineering via adsorbing gases at the sulfur vacancies in the metal-MoS 2 interface. NANOTECHNOLOGY 2017; 28:105204. [PMID: 28177928 DOI: 10.1088/1361-6528/aa5aab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Sulfur vacancies (S-vacancies) are common in monolayer MoS2 (mMoS2). Finding an effective way to control rather than abolish the effect of S-vacancies on contact properties is vital for the application of mMoS2. Here, we propose the adsorption of gases to passivate the S-vacancies in Pt-mMoS2 interfaces. Results demonstrate that gases are stably and preferentially adsorbed at S-vacancies. The n-type Schottky barriers of Pt-mMoS2 interfaces are reduced significantly upon the adsorption electron-donor gases, especially Cl2. The n-type transport character of the Pt-mMoS2 interface can be changed to p-type by the adsorption of electron-acceptor gases. As the adsorption concentration increases, both n- and p-type Schottky barriers are further reduced, and the lowest n- and p-type Schottky barriers are 0.36 and 0 eV, respectively. Note that the variations in Schottky barriers are independent of the oxidizing ability of gases but relative to the average number of valence electrons per gas atom. Analysis demonstrates that although gases at S-vacancies cannot cause gap states to vanish, and can even enhance Fermi level pinning, they modulate charge redistribution and the potential step at the interface region. Moreover, with increasing adsorption concentration, the valence band maximum of mMoS2 shows the opposite variation tendency to that of the potential step. Our results suggest that adsorption of gases is an effective way to passivate S-vacancies to modulate the transport properties of Pt-mMoS2 interfaces.
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9
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Lord AM, Ramasse QM, Kepaptsoglou DM, Evans JE, Davies PR, Ward MB, Wilks SP. Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires. NANO LETTERS 2017; 17:687-694. [PMID: 28001420 DOI: 10.1021/acs.nanolett.6b03699] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.
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Affiliation(s)
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SFTC Daresbury Campus , Keckwick Lane, Daresbury WA4 4AD, United Kingdom
| | - Despoina M Kepaptsoglou
- SuperSTEM Laboratory, SFTC Daresbury Campus , Keckwick Lane, Daresbury WA4 4AD, United Kingdom
| | | | - Philip R Davies
- Cardiff Catalysis Institute, School of Chemistry, Cardiff University , Park Place, Cardiff CF10 3AT, United Kingdom
| | - Michael B Ward
- Institute for Materials Research, University of Leeds , Leeds, LS2 9JT United Kingdom
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10
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Naldoni A, Montini T, Malara F, Mróz MM, Beltram A, Virgili T, Boldrini CL, Marelli M, Romero-Ocaña I, Delgado JJ, Dal Santo V, Fornasiero P. Hot Electron Collection on Brookite Nanorods Lateral Facets for Plasmon-Enhanced Water Oxidation. ACS Catal 2017. [DOI: 10.1021/acscatal.6b03092] [Citation(s) in RCA: 49] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Affiliation(s)
- Alberto Naldoni
- CNR − Istituto di Scienze e Tecnologie Molecolari, Via C. Golgi 19, 20133 Milano, Italy
| | - Tiziano Montini
- Dipartimento
di Scienze Chimiche e Farmaceutiche e Unita di Ricerca ICCOM-CNR Trieste,
INSTM Trieste, Università degli Studi di Trieste, Via L. Giorgieri
1, 34127 Trieste, Italy
| | - Francesco Malara
- CNR − Istituto di Scienze e Tecnologie Molecolari, Via C. Golgi 19, 20133 Milano, Italy
| | - Marta M. Mróz
- CNR
- Istituto di Fotonica e Nanotecnologie (IFN), Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Alessandro Beltram
- Dipartimento
di Scienze Chimiche e Farmaceutiche e Unita di Ricerca ICCOM-CNR Trieste,
INSTM Trieste, Università degli Studi di Trieste, Via L. Giorgieri
1, 34127 Trieste, Italy
| | - Tersilla Virgili
- CNR
- Istituto di Fotonica e Nanotecnologie (IFN), Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Chiara L. Boldrini
- CNR − Istituto di Scienze e Tecnologie Molecolari, Via C. Golgi 19, 20133 Milano, Italy
| | - Marcello Marelli
- CNR − Istituto di Scienze e Tecnologie Molecolari, Via C. Golgi 19, 20133 Milano, Italy
| | - Ismael Romero-Ocaña
- Dipartimento
di Scienze Chimiche e Farmaceutiche e Unita di Ricerca ICCOM-CNR Trieste,
INSTM Trieste, Università degli Studi di Trieste, Via L. Giorgieri
1, 34127 Trieste, Italy
| | - Juan José Delgado
- Departamento
de Ciencia de los Materiales e Ingeniería Metalúrgica
y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, 11510 Puerto Real, Cádiz, Spain
| | - Vladimiro Dal Santo
- CNR − Istituto di Scienze e Tecnologie Molecolari, Via C. Golgi 19, 20133 Milano, Italy
| | - Paolo Fornasiero
- Dipartimento
di Scienze Chimiche e Farmaceutiche e Unita di Ricerca ICCOM-CNR Trieste,
INSTM Trieste, Università degli Studi di Trieste, Via L. Giorgieri
1, 34127 Trieste, Italy
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11
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Ma X, Wu X, Wang Y, Dai Y. Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure. Phys Chem Chem Phys 2017; 19:18750-18756. [DOI: 10.1039/c7cp03453a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The Schottky barrier of the Pt/TiO2 interface depends strongly on both the interfacial stain and structure.
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Affiliation(s)
- Xiangchao Ma
- School of Physics and Optoelectronic Engineering
- Xidian University
- Xi'an
- China
| | - Xin Wu
- School of Physics and Optoelectronic Engineering
- Xidian University
- Xi'an
- China
| | - Yucheng Wang
- School of Physics and Optoelectronic Engineering
- Xidian University
- Xi'an
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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12
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Ma X, Dai Y, Li M, Huang B. Oxygen vacancies at the Au/SrTiO 3(001) interface: stabilities, electronic properties and effect on photocatalysis. Phys Chem Chem Phys 2016; 19:774-781. [PMID: 27929157 DOI: 10.1039/c6cp07087f] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Oxygen vacancies have proven to induce various and important effects on the properties of materials. In the present work, the thermodynamic stabilities and electronic properties of oxygen vacancies (Ov) on the SrTiO3 (STO)(001) surface and at the Au/STO(001) interface are systematically investigated by means of first-principles calculations. Both the SrO and TiO2 terminated (001) surfaces of STO are examined. It is found that the Ov located in the near-surface region of the two surfaces can be divided into three categories according to their properties: Ov in the surface atomic layer, Ov in the subsurface TiO2 atomic layers, and Ov in the subsurface SrO atomic layers. Counter-intuitively, for the SrO terminated surface the most stable site of Ov is in the first subsurface atomic layer. The Au metal in the Au/STO heterostructure significantly promotes the formation of Ov at and near the interface and thermodynamically promotes migration of Ov to the interfacial atomic layer. Furthermore, the interface Schottky barrier height is highly sensitive to both the concentration and position of Ov at the interface. These results are beneficial for the atomic-level understanding of the performance of STO-based photocatalysts and the rational design of more efficient ones.
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Affiliation(s)
- Xiangchao Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China. and School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, 710071, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Mengmeng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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13
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Nili H, Ahmed T, Walia S, Ramanathan R, Kandjani AE, Rubanov S, Kim J, Kavehei O, Bansal V, Bhaskaran M, Sriram S. Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO 3-x memristors. NANOTECHNOLOGY 2016; 27:505210. [PMID: 27861164 DOI: 10.1088/0957-4484/27/50/505210] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Donor doping of perovskite oxides has emerged as an attractive technique to create high performance and low energy non-volatile analog memories. Here, we examine the origins of improved switching performance and stable multi-state resistive switching in Nb-doped oxygen-deficient amorphous SrTiO3 (Nb:a-STO x ) metal-insulator-metal (MIM) devices. We probe the impact of substitutional dopants (i.e., Nb) in modulating the electronic structure and subsequent switching performance. Temperature stability and bias/time dependence of the switching behavior are used to ascertain the role of substitutional dopants and highlight their utility to modulate volatile and non-volatile behavior in a-STO x devices for adaptive and neuromorphic applications. We utilized a combination of transmission electron microscopy, photoluminescence emission properties, interfacial compositional evaluation, and activation energy measurements to investigate the microstructure of the nanofilamentary network responsible for switching. These results provide important insights into understanding mechanisms that govern the performance of donor-doped perovskite oxide-based memristive devices.
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Affiliation(s)
- Hussein Nili
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, VIC 3001, Australia
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14
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Cui Y. Engineered phages for electronics. Biosens Bioelectron 2016; 85:964-976. [DOI: 10.1016/j.bios.2016.05.086] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2016] [Revised: 05/29/2016] [Accepted: 05/30/2016] [Indexed: 11/26/2022]
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15
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Niu KY, Liu M, Persson KA, Han Y, Zheng H. Strain-Mediated Interfacial Dynamics during Au-PbS Core-Shell Nanostructure Formation. ACS NANO 2016; 10:6235-6240. [PMID: 27214625 DOI: 10.1021/acsnano.6b02331] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
An understanding of the hierarchical nanostructure formation is of significant importance for the design of advanced functional materials. Here, we report the in situ study of lead sulfide (PbS) growth on gold (Au) nanorod seeds using liquid cell transmission electron microscopy (TEM). By tracking the formation dynamics of Au-PbS core-shell nanoparticles, we found the preferential heterogeneous nucleation of PbS on the ends of a Au nanorod prior to the development of a complete PdS shell. During PbS shell growth, drastic sulfidation of Au nanorod was observed, leading to large volume shrinkage (up to 50%) of the initial Au nanorod seed. We also captured intriguing wavy interfacial behavior, which can be explained by our DFT calculation results that the local strain gradient at the core-shell interface facilitates the mass transport and mediates reversible phase transitions of Au ↔ Au2S during the PbS shell growth.
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Affiliation(s)
- Kai-Yang Niu
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Miao Liu
- Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Kristin A Persson
- Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Yu Han
- Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Haimei Zheng
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
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16
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Wang ZY, Ma Z. Examining the Contributions of Image-Charge Forces to Charge Reversal: Discrete Versus Continuum Modeling of Surface Charges. J Chem Theory Comput 2016; 12:2880-8. [DOI: 10.1021/acs.jctc.6b00057] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Zhi-Yong Wang
- School
of Optoelectronic Information, Chongqing University of Technology, Chongqing 400054, China
| | - Zengwei Ma
- School
of Optoelectronic Information, Chongqing University of Technology, Chongqing 400054, China
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17
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Ma X, Dai Y, Yu L, Huang B. Interface Schottky barrier engineering via strain in metal-semiconductor composites. NANOSCALE 2016; 8:1352-1359. [PMID: 26511292 DOI: 10.1039/c5nr05583k] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.
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Affiliation(s)
- Xiangchao Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
| | - Lin Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
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18
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Lord AM, Maffeis TG, Kryvchenkova O, Cobley RJ, Kalna K, Kepaptsoglou DM, Ramasse QM, Walton AS, Ward MB, Köble J, Wilks SP. Controlling the Electrical Transport Properties of Nanocontacts to Nanowires. NANO LETTERS 2015; 15:4248-54. [PMID: 26042356 DOI: 10.1021/nl503743t] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices. Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schottky to Ohmic depending on the size of the Au particles in relation to the cross-sectional width of the ZnO nanowires. We observe a distinct Schottky to Ohmic transition in transport behavior at an Au to nanowire diameter ratio of 0.6. The current-voltage electrical measurements performed with a multiprobe instrument are explained using 3-D self-consistent electrostatic and transport simulations revealing that tunneling at the contact edge is the dominant carrier transport mechanism for these nanoscale contacts. The results are applicable to other nanowire materials such as Si, GaAs, and InAs when the effects of surface charge and contact size are considered.
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Affiliation(s)
| | | | | | | | | | - Despoina M Kepaptsoglou
- ⊥SuperSTEM Laboratory, SFTC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD, United Kingdom
| | - Quentin M Ramasse
- ⊥SuperSTEM Laboratory, SFTC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD, United Kingdom
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