Enhancing magnetic ordering in Cr-doped Bi2Se3 using high-TC ferrimagnetic insulator

Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator

Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

We present STM/STS, ARPES and magnetotransport studies of the surface topography and electronic structure of pristine Bi₂Se₃ in comparison to Bi_1.96Mg_0.04Se₃ and Bi_1.98Fe_0.02Se₃. The topography images reveal a large number of complex, triangle-shaped defects at the surface. The local electronic structure of both the defected and non-defected regions is examined by STS. The defect-related states shift together with the Dirac point observed in the undefected area, suggesting that the local electronic structure at the defects is influenced by doping in the same way as the electronic structure of the undefected surface. Additional information about the electronic structure of the samples is provided by ARPES, which reveals the dependence of the bulk and surface electronic bands on doping, including such parameters as the Fermi wave vector. The subtle changes of the surface electronic structure by doping are verified with magneto-transport measurements at low temperatures (200 mK) allowing the detection of Shubnikov-de Haas (SdH) quantum oscillations.

Magnetic Topological Insulator Heterostructures: A Review

Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)₂ Te₃ films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.

Diverse Structures and Magnetic Properties in Nonlayered Monolayer Chromium Selenide

Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe₂ and Cr₂Se₃ grown by molecular beam epitaxy. In the monolayer CrSe₂, 1T-CrSe₂ with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe₂ can be transformed into Cr₂Se₃ with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe₂ is antiferromagnetic, monolayer Cr₂Se₃ is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.

Epitaxial growth of Bi(110) and Bi2Se3thin films on a ferromagnetic insulator substrate of Cr2Ge2Te6

When a topological insulator (TI) is brought to the proximity of a ferromagnetic insulator (FMI), the breaking of the time-reversal symmetry may give rise to quantum anomalous Hall effect (QAHE). The physical properties of such TI-FMI systems are greatly affected by the interfacial structures of the components. Here, we report the growth and structural properties of Bi(110) and Bi₂Se₃thin films on a FMI of Cr₂Ge₂Te₆(CGT) substrate by scanning tunneling microscopy. We observed various defects and impurities on the CGT surfaces, which serve as the preferential sites for initial nucleation and epitaxial growth of Bi(110) thin films. The exposure of the as-grown Bi(110) thin films to Se vapor leads to the formation of polycrystalline Bi₂Se₃thin films with randomly distributed holes. The structure and composition of the as-prepared Bi₂Se₃thin films were further confirmed by Raman spectroscopy and x-ray photoelectron spectroscopy. Our work shows that the quality of the CGT crystals is vital for the growth of high-quality TIs on CGT substrates for QAHE.

Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures

Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs and is commonly achieved by changing the magnetic doping concentration, which inevitably affects the spin-orbit coupling strength and the topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with a Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of nonmagnetic spacer layers between two atomically thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr₂O₃ buffer layers also leads to a robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin-film topological materials.

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

While the discovery of two-dimensional (2D) magnets opens the door for fundamental physics and next-generation spintronics, it is technically challenging to achieve the room-temperature ferromagnetic (FM) order in a way compatible with potential device applications. Here, we report the growth and properties of single- and few-layer CrTe₂, a van der Waals (vdW) material, on bilayer graphene by molecular beam epitaxy (MBE). Intrinsic ferromagnetism with a Curie temperature (T_C) up to 300 K, an atomic magnetic moment of ~0.21 [Formula: see text]/Cr and perpendicular magnetic anisotropy (PMA) constant (K_u) of 4.89 × 10⁵ erg/cm³ at room temperature in these few-monolayer films have been unambiguously evidenced by superconducting quantum interference device and X-ray magnetic circular dichroism. This intrinsic ferromagnetism has also been identified by the splitting of majority and minority band dispersions with ~0.2 eV at Г point using angle-resolved photoemission spectroscopy. The FM order is preserved with the film thickness down to a monolayer (T_C ~ 200 K), benefiting from the strong PMA and weak interlayer coupling. The successful MBE growth of 2D FM CrTe₂ films with room-temperature ferromagnetism opens a new avenue for developing large-scale 2D magnet-based spintronics devices.

Absence of Magnetic Proximity Effect at the Interface of Bi_{2}Se_{3} and (Bi,Sb)_{2}Te_{3} with EuS

We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)_{2}(Se,Te)_{3} family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of ∼10^{-3}  μ_{B}/at.

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

We report the modification of magnetism in a magnetic insulator Y_{3}Fe_{5}O_{12} thin film by topological surface states (TSS) in an adjacent topological insulator Bi_{2}Se_{3} thin film. Ferromagnetic resonance measurements show that the TSS in Bi_{2}Se_{3} produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y_{3}Fe_{5}O_{12}. Such TSS-induced changes become more pronounced as the temperature decreases from 300 to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1-x)2Te3 Thin Film Grown on CrGeTe3 Substrate

Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (Bi_xSb_1-x)₂Te₃ (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe₃ (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.

Axion Insulator State in a Ferromagnet/Topological Insulator/Antiferromagnet Heterostructure

We propose the use of ferromagnetic insulator MnBi₂Se₄/Bi₂Se₃/antiferromagnetic insulator Mn₂Bi₂Se₅ heterostructures for the realization of the axion insulator state. Importantly, the axion insulator state in such heterostructures only depends on the magnetization of the ferromagnetic insulator and, hence, can be observed in a wide range of external magnetic fields. Using density functional calculations and model Hamiltonian simulations, we find that the top and bottom surfaces have opposite half-quantum Hall conductances, [Formula: see text] and [Formula: see text], with a sizable global spin gap of 5.1 meV opened for the topological surface states of Bi₂Se₃. Our work provides a new strategy for the search of axion insulators by using van der Waals antiferromagnetic insulators along with three-dimensional topological insulators.

Experimental observation of dual magnetic states in topological insulators

The recently discovered topological phase offers new possibilities for spintronics and condensed matter. Even insulating material exhibits conductivity at the edges of certain systems, giving rise to an anomalous quantum Hall effect and other coherent spin transport phenomena, in which heat dissipation is minimized, with potential uses for next-generation energy-efficient electronics. While the metallic surface states of topological insulators (TIs) have been extensively studied, direct comparison of the surface and bulk magnetic properties of TIs has been little explored. We report unambiguous evidence for distinctly enhanced surface magnetism in a prototype magnetic TI, Cr-doped Bi₂Se₃. Using synchrotron-based x-ray techniques, we demonstrate a "three-step transition" model, with a temperature window of ~15 K, where the TI surface is magnetically ordered while the bulk is not. Understanding the dual magnetization process has strong implications for defining a physical model of magnetic TIs and lays the foundation for applications to information technology.

Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

Inducing magnetism in a topological insulator (TI) by exchange coupling with a ferromagnetic insulator (FMI) will break the time-reversal symmetry of topological surface states, offering possibilities to realize several predicted novel magneto-electric effects. Seeking suitable FMI materials is crucial for the coupling of heterojunctions, and yet is challenging as well and only a few kinds have been explored. In this report, we introduce epitaxial LaCoO3 thin films on a SrTiO3 substrate, which is an insulating ferromagnet with a Curie temperature of TC ∼ 85 K, to be combined with TIs for proximity coupling. Thin films of the prototype topological insulator, Bi2Se3, are successfully grown onto the (001) surface of LaCoO3/SrTiO3, forming a high-quality TI/FMI heterostructure with a sharp interface. The magnetic and transport measurements manifest the emergence of a ferromagnetic phase in Bi2Se3 films, with additional induced moments and a suppressed weak antilocalization effect, while preserving the carrier mobility of the intrinsic Bi2Se3 films at the same time. Moreover, a signal of an anomalous Hall effect is observed and persists up to temperatures above 100 K, paving the way towards spintronic device applications.

Insights into Magneto-Optics of Helical Conjugated Polymers

Materials with magneto-optic (MO) properties have enabled critical fiber-optic applications and highly sensitive magnetic field sensors. While traditional MO materials are inorganic in nature, new generations of MO materials based on organic semiconducting polymers could allow increased versatility for device architectures, manufacturing options, and flexible mechanics. However, the origin of MO activity in semiconducting polymers is far from understood. In this paper, we report high MO activity observed in a chiral helical poly-3-(alkylsulfone)thiophene (P3AST), which confirms a new design for the creation of a giant Faraday effect with Verdet constants up to (7.63 ± 0.78) × 10⁴ deg T^-1 m^-1 at 532 nm. We have determined that the sign of the Verdet constant and its magnitude are related to the helicity of the polymer at the measured wavelength. The Faraday rotation and the helical conformation of P3AST are modulated by thermal annealing, which is further supported by DFT calculations and MD simulations. Our results demonstrate that helical polymers exhibit enhanced Verdet constants and expand the previous design space for polythiophene MO materials that was thought to be limited to highly regular lamellar structures. The structure-property studies herein provide insights for the design of next-generation MO materials based upon semiconducting organic polymers.

Heterostructured ferromagnet-topological insulator with dual-phase magnetic properties

The introduction of ferromagnetism at the surface of a topological insulator (TI) produces fascinating spin-charge phenomena. It has been assumed that these fascinating effects are associated with a homogeneous ferromagnetic (FM) layer possessing a single type of magnetic phase. However, we obtained phase separation within the FM layer of a Ni80Fe20/Bi2Se3 heterostructure. This phase separation was caused by the diffusion of Ni into Bi2Se3, forming a ternary magnetic phase of Ni:Bi2Se3. The inward diffusion of Ni led to the formation of an FeSe phase outward, transforming the original Ni80Fe20/Bi2Se3 into a sandwich structure comprising FeSe/Ni:Bi2Se3/Bi2Se3 with dual-phase magnetic characteristics similar to that driven by the proximity effect. Such a phenomenon might have been overlooked in previous studies with a strong focus on the proximity effect. X-ray magnetic spectroscopy revealed that FeSe and Ni:Bi2Se3 possess horizontal and perpendicular magnetic anisotropy, respectively. The overall magnetic order of the heterostructure can be easily tuned by adjusting the thickness of the Bi2Se3 as it compromises the magnetic orders of the two magnetic phases. This discovery is essential to the quantification of spin-charge phenomena in similar material combinations where the FM layer is composed of multiple elements.

Ferroelectric Phase Transition Induced a Large FMR Tuning in Self-Assembled BaTiO3:Y3Fe5O12 Multiferroic Composites

Yttrium iron garnet (YIG) is of great importance in RF/microwave devices for its low loss, low intrinsic damping, and high permeability. Nevertheless, tuning of YIG-based multiferroics is still a challenge due to its near-zero magnetostriction and the difficulty of building epitaxial interface between ferromagnetic garnet and ferroelectric perovskite phases. In this work, the vertically aligned heterostructure of YIG:BTO/STO(001) with local epitaxial interface between BTO and YIG is well-constructed, where the single crystal BTO pillars are embedded in YIG matrix. A large magnetoelectric coupling effect that drives YIG's FMR shift up to 512 and 333 Oe (1-2 order greater than those of all state-of-the-art progresses) is obtained through BTO ferroelectric phase changes induced by temperature variation at 295 and 193 K, correspondingly. This record high magnetoelectric tunability of YIG paves a way toward thermal/electrical tunable YIG devices.

Intrinsic ferromagnetism and quantum transport transition in individual Fe-doped Bi2Se3 topological insulator nanowires

Time-reversal symmetry is broken by magnetic doping in topological insulators (TIs). An energy gap at the Dirac point opens and thus, generates numerous surface carriers. TI nanostructures are an ideal platform to investigate exotic surface transport behavior due to their large surface-to-volume ratio, which enhances the contribution of the TI surface states. However, magnetic doping into TI nanostructures has been challenging, and induced magnetic behavior has remained elusive. Herein, we have synthesized Fe-doped Bi₂Se₃ nanowires using a facile chemical vapor deposition with a doping concentration of ∼1 at%. The combined structural characterizations illustrate the homogeneous distribution of the Fe dopants. Cryogenic magnetic force microscopy gives direct evidence of the spontaneous magnetization with a Curie temperature of ∼40 K in a single nanowire. The transport measurements show a quantum transition from weak anti-localization to weak localization behavior. All the evidence indicates the existence of intrinsic ferromagnetism and gapped topological surface states in the TI nanowires, paving a way for future memory and magnetoelectric nanodevice applications.

Understanding the Giant Enhancement of Exchange Interaction in Bi_{2}Se_{3}-EuS Heterostructures

A recent experiment indicated that a ferromagnetic EuS film in contact with a topological insulator Bi_{2}Se_{3} might show a largely enhanced Curie temperature and perpendicular magnetic anisotropy [F. Katmis et al., Nature (London) 533, 513 (2016).NATUAS0028-083610.1038/nature17635]. Through systematic density functional calculations, we demonstrate that in addition to the factor that Bi_{2}Se_{3} has a strong spin orbit coupling, the topological surface states are crucial to make these unusual behaviors robust as they hybridize with EuS states and extend rather far into the magnetic layers. The magnetic moments of Eu atoms are nevertheless not much enhanced, unlike what was reported in the experiment. Our results and model analyses provide useful insights for how these quantities are linked, and pave a way for the control of properties of magnetic films via contact with topological insulators.

Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TIs) exhibits many fascinating physical properties for potential applications in nanoelectronics and spintronics. However, in transition metal-doped TIs, the only experimentally demonstrated QAHE system to date, the QAHE is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (T_c) and inherent spin disorder associated with the random magnetic dopants. We demonstrate drastically enhanced T_c by exchange coupling TIs to Tm₃Fe₅O₁₂, a high-T_c magnetic insulator with perpendicular magnetic anisotropy. Signatures showing that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is spin-polarized. The greatly enhanced T_c, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures.

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy

Thin (4-20 nm) yttrium iron garnet (Y₃Fe₅O₁₂, YIG) layers have been grown on gadolinium gallium garnet (Gd₃Ga₅O₁₂, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe³⁺ sublattices were studied by XMCD.

Interface electronic structure at the topological insulator-ferrimagnetic insulator junction

An interface electron state at the junction between a three-dimensional topological insulator film, Bi₂Se₃, and a ferrimagnetic insulator film, Y₃Fe₅O₁₂ (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi₂Se₃ film was directly observed and localized 3d spin states of the Fe³⁺ in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi₂Se₃ film.

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

The tailoring of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. Here, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal-insulator transitions in Cr-doped Bi₂Se₃ films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirac cones and the opening of nontrivial band gaps. We also show that the in-plane magnetization leads to significant suppression of inter-TSS scattering in Cr-doped Bi₂Se₃. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the efforts of an extensive material search.

Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires

Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.

Probing the Buried Magnetic Interfaces

Understanding magnetism in ferromagnetic metal/semiconductor (FM/SC) heterostructures is important to the development of the new-generation spin field-effect transistor. Here, we report an element-specific X-ray magnetic circular dichroism study of the interfacial magnetic moments for two FM/SC model systems, namely, Co/GaAs and Ni/GaAs, which was enabled using a specially designed FM1/FM2/SC superstructure. We observed a robust room temperature magnetization of the interfacial Co, while that of the interfacial Ni was strongly diminished down to 5 K because of hybridization of the Ni d(eg) and GaAs sp(3) states. The validity of the selected method was confirmed by first-principles calculations, showing only small deviations (<0.02 and <0.07 μB/atom for Co/GaAs and Ni/GaAs, respectively) compared to the real FM/SC interfaces. Our work proved that the electronic structure and magnetic ground state of the interfacial FM2 is not altered when the topmost FM2 is replaced by FM1 and that this model is applicable generally for probing the buried magnetic interfaces in the advanced spintronic materials..

Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy

We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3. Monoclinic Fe3Se4 is identified as the main secondary phase through detailed structural measurements. Due to the presence of the hard ferrimagnetic Fe3Se4 inclusions, the system exhibits a very large coercive field at low temperature and room temperature magnetic ordering. Despite this composite structure and the proximity of a magnetic phase, the surface electronic structure of Bi2Se3 is preserved, as shown by the persistence of a gapless Dirac cone at Γ.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators

Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical magnetotransport, and X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with spin-orbit coupling (SOC). We observed a sizable spin moment mspin = (2.05 ± 0.20) μB/Cr and a small and negative orbital moment morb = (-0.05 ± 0.02) μB/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (CrBi-CrI)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 < x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi2-xCrxSe3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 μB/Cr predicted by Hund's rule.

High-Mobility Sm-Doped Bi2 Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

High-mobility (Smx Bi1-x )2 Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10(19) cm(-3) and the mobility can reach about 7200 cm(2) V(-1) s(-1) with pronounced Shubnikov-de Haas oscillations.

High Temperature Magnetic Stabilization of Cobalt Nanoparticles by an Antiferromagnetic Proximity Effect

Thermal activation tends to destroy the magnetic stability of small magnetic nanoparticles, with crucial implications for ultrahigh density recording among other applications. Here we demonstrate that low-blocking-temperature ferromagnetic (FM) Co nanoparticles (T(B)<70  K) become magnetically stable above 400 K when embedded in a high-Néel-temperature antiferromagnetic (AFM) NiO matrix. The origin of this remarkable T(B) enhancement is due to a magnetic proximity effect between a thin CoO shell (with low Néel temperature, T(N), and high anisotropy, K(AFM)) surrounding the Co nanoparticles and the NiO matrix (with high T(N) but low K(AFM)). This proximity effect yields an effective antiferromagnet with an apparent T(N) beyond that of bulk CoO, and an enhanced anisotropy compared to NiO. In turn, the Co core FM moment is stabilized against thermal fluctuations via core-shell exchange-bias coupling, leading to the observed T(B) increase. Mean-field calculations provide a semiquantitative understanding of this magnetic-proximity stabilization mechanism.

Atomic-Scale Interfacial Magnetism in Fe/Graphene Heterojunction

Successful spin injection into graphene makes it a competitive contender in the race to become a key material for quantum computation, or the spin-operation-based data processing and sensing. Engineering ferromagnetic metal (FM)/graphene heterojunctions is one of the most promising avenues to realise it, however, their interface magnetism remains an open question up to this day. In any proposed FM/graphene spintronic devices, the best opportunity for spin transport could only be achieved where no magnetic dead layer exists at the FM/graphene interface. Here we present a comprehensive study of the epitaxial Fe/graphene interface by means of X-ray magnetic circular dichroism (XMCD) and density functional theory (DFT) calculations. The experiment has been performed using a specially designed FM₁/FM₂/graphene structure that to a large extent restores the realistic case of the proposed graphene-based transistors. We have quantitatively observed a reduced but still sizable magnetic moments of the epitaxial Fe ML on graphene, which is well resembled by simulations and can be attributed to the strong hybridization between the Fe 3d_z2 and the C 2p_z orbitals and the sp-orbital-like behavior of the Fe 3d electrons due to the presence of graphene.

Variation of exchange energy in δ-(Ga,Mn)As films under tensile strain: PBE and LDA+U calculations

PBE and LDA+U calculations were both used to clarify the variation of exchange energy in three kinds of δ-(Ga,Mn)As films under tensile strain.