25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Latest Innovations in 2D Flexible Nanoelectronics

2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.

Evolution of nanostructured skin patches towards multifunctional wearable platforms for biomedical applications

Recent advances in the field of skin patches have promoted the development of wearable and implantable bioelectronics for long-term, continuous healthcare management and targeted therapy. However, the design of electronic skin (e-skin) patches with stretchable components is still challenging and requires an in-depth understanding of the skin-attachable substrate layer, functional biomaterials and advanced self-powered electronics. In this comprehensive review, we present the evolution of skin patches from functional nanostructured materials to multi-functional and stimuli-responsive patches towards flexible substrates and emerging biomaterials for e-skin patches, including the material selection, structure design and promising applications. Stretchable sensors and self-powered e-skin patches are also discussed, ranging from electrical stimulation for clinical procedures to continuous health monitoring and integrated systems for comprehensive healthcare management. Moreover, an integrated energy harvester with bioelectronics enables the fabrication of self-powered electronic skin patches, which can effectively solve the energy supply and overcome the drawbacks induced by bulky battery-driven devices. However, to realize the full potential offered by these advancements, several challenges must be addressed for next-generation e-skin patches. Finally, future opportunities and positive outlooks are presented on the future directions of bioelectronics. It is believed that innovative material design, structure engineering, and in-depth study of fundamental principles can foster the rapid evolution of electronic skin patches, and eventually enable self-powered close-looped bioelectronic systems to benefit mankind.

Stretchable Ink Printed Graphene Device with Weft-Knitted Fabric Substrate Based on Thermal-Acoustic Effect

Thermal-acoustic devices have great potential as flexible ultrathin sound sources. However, stretchable sound sources based on a thermal-acoustic mechanism remain elusive, as realizing stable resistance in a reasonable range is challenging. In this study, a stretchable thermal-acoustic device based on graphene ink is fabricated on a weft-knitted fabric. After optimization of the graphene ink concentration, the device resistance changes by 8.94% during 4000 cycles of operation in the unstretchable state. After multiple cycles of bending, folding, prodding, and washing, the sound pressure level (SPL) change of the device is within 10%. Moreover, the SPL has an increase with the strain in a specific range, showing a phenomenon similar to the negative differential resistance (NDR) effect. This study sheds light on the use of stretchable thermal-acoustic devices for e-skin and wearable electronics.

Graphene and Its Derivatives: Synthesis and Application in the Electrochemical Detection of Analytes in Sweat

Wearable sensors and invasive devices have been studied extensively in recent years as the demand for real-time human healthcare applications and seamless human-machine interaction has risen exponentially. An explosion in sensor research throughout the globe has been ignited by the unique features such as thermal, electrical, and mechanical properties of graphene. This includes wearable sensors and implants, which can detect a wide range of data, including body temperature, pulse oxygenation, blood pressure, glucose, and the other analytes present in sweat. Graphene-based sensors for real-time human health monitoring are also being developed. This review is a comprehensive discussion about the properties of graphene, routes to its synthesis, derivatives of graphene, etc. Moreover, the basic features of a biosensor along with the chemistry of sweat are also discussed in detail. The review mainly focusses on the graphene and its derivative-based wearable sensors for the detection of analytes in sweat. Graphene-based sensors for health monitoring will be examined and explained in this study as an overview of the most current innovations in sensor designs, sensing processes, technological advancements, sensor system components, and potential hurdles. The future holds great opportunities for the development of efficient and advanced graphene-based sensors for the detection of analytes in sweat.

Graphene-Induced Performance Enhancement of Batteries, Touch Screens, Transparent Memory, and Integrated Circuits: A Critical Review on a Decade of Developments

Graphene achieved a peerless level among nanomaterials in terms of its application in electronic devices, owing to its fascinating and novel properties. Its large surface area and high electrical conductivity combine to create high-power batteries. In addition, because of its high optical transmittance, low sheet resistance, and the possibility of transferring it onto plastic substrates, graphene is also employed as a replacement for indium tin oxide (ITO) in making electrodes for touch screens. Moreover, it was observed that graphene enhances the performance of transparent flexible electronic modules due to its higher mobility, minimal light absorbance, and superior mechanical properties. Graphene is even considered a potential substitute for the post-Si electronics era, where a high-performance graphene-based field-effect transistor (GFET) can be fabricated to detect the lethal SARS-CoV-2. Hence, graphene incorporation in electronic devices can facilitate immense device structure/performance advancements. In the light of the aforementioned facts, this review critically debates graphene as a prime candidate for the fabrication and performance enhancement of electronic devices, and its future applicability in various potential applications.

Strain Releasing of Flexible 2D Electronics through van der Waals Sliding Contact

Two-dimensional (2D) materials have demonstrated promising potential for flexible electronics, owning to their atomic thin body thickness and dangling-bond-free surface. Here, we report a sliding contact device structure for efficient strain releasing. By fabricating a weakly coupled metal-2D junction with a van der Waals (vdW) gap in between, the applied strain could be effectively released through their interface sliding; hence minimized strain is transferred to the 2D lattice. Therefore, we observed stable device behavior with electrodes stretching over 110%, much higher than 2D devices using evaporated metal contacts. Furthermore, through multicycle straining-releasing measurements, we found the electrodes still form intimate contact with nearly constant contact resistance during sliding, confirming the optimization of device flexibility and electrical properties at the same time. Finally, we demonstrate this vdW sliding contact is a general device geometry and could be well-extended to various 2D or 3D bulk materials, leading to devices with much higher strain tolerance.

Nanostructured Carbons: towards Soft-Bioelectronics, Biosensing and Theraputic Applications

Recently, nanostructured carbon-based soft bioelectronics and biosensors have received tremendous attention due to their outstanding physical and chemical properties. The ultrahigh specific surface area, high flexibility, lightweight, high electrical conductivity, and biocompatibility of 1D and 2D nanocarbons, such as carbon nanotubes (CNT) and graphene, are advantageous for bioelectronics applications. These materials improve human life by delivering therapeutic advancements in gene, tumor, chemo, photothermal, immune, radio, and precision therapies. They are also utilized in biosensing platforms, including optical and electrochemical biosensors to detect cholesterol, glucose, pathogenic bacteria (e. g., coronavirus), and avian leucosis virus. This review summarizes the most recent advancements in bioelectronics and biosensors by exploiting the outstanding characteristics of nanocarbon materials. The synthesis and biocompatibility of nanocarbon materials are briefly discussed. In the following sections, applications of graphene and CNTs for different therapies and biosensing are elaborated. Finally, the key challenges and future perspectives of nanocarbon materials for biomedical applications are highlighted.

High Mobility Graphene on EVA/PET

Transparent conductive film on a plastic substrate is a critical component in low cost, flexible and lightweight optoelectronics. CVD graphene transferred from copper- to ethylene vinyl acetate (EVA)/polyethylene terephthalate (PET) foil by hot press lamination has been reported as a robust and affordable alternative to manufacture highly flexible and conductive films. Here, we demonstrate that annealing the samples at 60 ∘C under a flow of nitrogen, after wet etching of copper foil by nitric acid, significantly enhances the Hall mobility of such graphene films. Raman, Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the morphology and chemical composition of the graphene.

Printing thermoelectric inks toward next-generation energy and thermal devices

The ability of thermoelectric (TE) materials to convert thermal energy to electricity and vice versa highlights them as a promising candidate for sustainable energy applications. Despite considerable increases in the figure of merit zT of thermoelectric materials in the past two decades, there is still a prominent need to develop scalable synthesis and flexible manufacturing processes to convert high-efficiency materials into high-performance devices. Scalable printing techniques provide a versatile solution to not only fabricate both inorganic and organic TE materials with fine control over the compositions and microstructures, but also manufacture thermoelectric devices with optimized geometric and structural designs that lead to improved efficiency and system-level performances. In this review, we aim to provide a comprehensive framework of printing thermoelectric materials and devices by including recent breakthroughs and relevant discussions on TE materials chemistry, ink formulation, flexible or conformable device design, and processing strategies, with an emphasis on additive manufacturing techniques. In addition, we review recent innovations in the flexible, conformal, and stretchable device architectures and highlight state-of-the-art applications of these TE devices in energy harvesting and thermal management. Perspectives of emerging research opportunities and future directions are also discussed. While this review centers on thermoelectrics, the fundamental ink chemistry and printing processes possess the potential for applications to a broad range of energy, thermal and electronic devices.

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS₂-based FETs targeting RF applications.

Materials Science Challenges to Graphene Nanoribbon Electronics

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.

Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy

We developed an experimental metrology for measuring local strain in molecular beam epitaxially (MBE) grown crystalline chalcogenide thin films through micro-Raman spectroscopy. For In₂Se₃ and Bi₂Se₃ on c-plane sapphire substrates, the transverse-optical vibrational mode (A₁ phonon) is most sensitive to strain. We first calibrated the phonon frequency-strain relationship in each material by introducing strain in flexible substrates. The Raman shift-strain coefficient is -1.97 cm^-1/% for the In₂Se₃ A₁(LO + TO) mode and -1.68 cm^-1/% for the Bi₂Se₃ A_1g ² mode. In₂Se₃ and Bi₂Se₃ samples exhibit compressive strain and tensile strain, respectively. The observations are compliant with predictions from the opposite relative thermal expansion coefficient between the sample and the substrate. We also map strain cartography near the edge of as-grown MBE samples. In In₂Se₃, the strain accumulates with increasing film thickness, while a low strain is observed in thicker Bi₂Se₃ films.

Ultrahigh electron mobility induced by strain engineering in direct semiconductor monolayer Bi2TeSe2

The successful commercial applications as thermoelectric devices and, due to their exotic electronic properties, as topological insulators of bismuth telluride (Bi₂Te₃) and bismuth selenide (Bi₂Se₃) have stimulated research interest on Bi₂Se₃/Bi₂Te₃-based chemical compounds. Based on the first-principles calculations, we investigate the electronic, optical, vibrational and transport properties of new monolayer Bi₂TeSe₂ obtained by transmuting one Se atom into its neighboring Te atom in the same group from Bi₂Se₃. We find that the monolayer Bi₂TeSe₂ maintains a stable hexagonal structure up to 700 K. Monolayer Bi₂TeSe₂ possesses a direct bandgap of 0.29 eV due to the strong spin-orbit coupling effects, and it remains a direct semiconductor for strains in a moderate range. The optical absorption covers a wide range from the green region to the ultraviolet region, which may lead to applications in optoelectronic devices like saturable absorbers. An extremely high electron mobility of 20 678 cm² V^-1 s^-1 along the zigzag direction can be achieved by strain engineering with -6% compressive strain, which is nearly ten times larger than the intrinsic mobility. These indicate that monolayer Bi₂TeSe₂ is a promising candidate for future high-speed (opto)electronic devices.

Velocity-dependent friction enhances tribomechanical differences between monolayer and multilayer graphene

The influence of sliding speed in the nanoscale friction forces between a silicon tip and monolayer and multilayer graphene were investigated with the use of an atomic force microscope. We found that the friction forces increase linearly with the logarithm of the sliding speed in a highly layer-dependent way. The increase in friction forces with velocity is amplified at the monolayer. The amplification of the friction forces with velocity results from the introduction of additional corrugation in the interaction potential driven by the tip movement. This effect can be interpreted as a manifestation of local thermally induced surface corrugations in nanoscale influencing the hopping dynamics of the atoms at the contact. These experimental observations were explained by modeling the friction forces with the thermally activated Prandtl-Tomlinson model. The model allowed determination of the interaction potential between tip and graphene, critical forces, and attempt frequencies of slip events. The latter was observed to be dominated by the effective contact stiffness and independent of the number of layers.

Two-dimensional layered materials: from mechanical and coupling properties towards applications in electronics

With the increasing interest in nanodevices based on two-dimensional layered materials (2DLMs) after the birth of graphene, the mechanical and coupling properties of these materials, which play an important role in determining the performance and life of nanodevices, have drawn increasingly more attention. In this review, both experimental and simulation methods investigating the mechanical properties and behaviour of 2DLMs have been summarized, which is followed by the discussion of their elastic properties and failure mechanisms. For further understanding and tuning of their mechanical properties and behaviour, the influence factors on the mechanical properties and behaviour have been taken into consideration. In addition, the coupling properties between mechanical properties and other physical properties are summarized to help set up the theoretical blocks for their novel applications. Thus, the understanding of the mechanical and coupling properties paves the way to their applications in flexible electronics and novel electronics, which is demonstrated in the last part. This review is expected to provide in-depth and comprehensive understanding of mechanical and coupling properties of 2DLMs as well as direct guidance for obtaining satisfactory nanodevices from the aspects of material selection, fabrication processes and device design.

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

A high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V_Dirac ) of the graphene FET can thus be systematically controlled. In particular, the V_Dirac approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm² V^-1 s^-1 , respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications.

Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring

Skin is the largest organ of the human body, and it offers a diagnostic interface rich with vital biological signals from the inner organs, blood vessels, muscles, and dermis/epidermis. Soft, flexible, and stretchable electronic devices provide a novel platform to interface with soft tissues for robotic feedback and control, regenerative medicine, and continuous health monitoring. Here, we introduce the term "lab-on-skin" to describe a set of electronic devices that have physical properties, such as thickness, thermal mass, elastic modulus, and water-vapor permeability, which resemble those of the skin. These devices can conformally laminate on the epidermis to mitigate motion artifacts and mismatches in mechanical properties created by conventional, rigid electronics while simultaneously providing accurate, non-invasive, long-term, and continuous health monitoring. Recent progress in the design and fabrication of soft sensors with more advanced capabilities and enhanced reliability suggest an impending translation of these devices from the research lab to clinical environments. Regarding these advances, the first part of this manuscript reviews materials, design strategies, and powering systems used in soft electronics. Next, the paper provides an overview of applications of these devices in cardiology, dermatology, electrophysiology, and sweat diagnostics, with an emphasis on how these systems may replace conventional clinical tools. The review concludes with an outlook on current challenges and opportunities for future research directions in wearable health monitoring.

Flexible Graphene-Based Wearable Gas and Chemical Sensors

Wearable electronics is expected to be one of the most active research areas in the next decade; therefore, nanomaterials possessing high carrier mobility, optical transparency, mechanical robustness and flexibility, lightweight, and environmental stability will be in immense demand. Graphene is one of the nanomaterials that fulfill all these requirements, along with other inherently unique properties and convenience to fabricate into different morphological nanostructures, from atomically thin single layers to nanoribbons. Graphene-based materials have also been investigated in sensor technologies, from chemical sensing to detection of cancer biomarkers. The progress of graphene-based flexible gas and chemical sensors in terms of material preparation, sensor fabrication, and their performance are reviewed here. The article provides a brief introduction to graphene-based materials and their potential applications in flexible and stretchable wearable electronic devices. The role of graphene in fabricating flexible gas sensors for the detection of various hazardous gases, including nitrogen dioxide (NO₂), ammonia (NH₃), hydrogen (H₂), hydrogen sulfide (H₂S), carbon dioxide (CO₂), sulfur dioxide (SO₂), and humidity in wearable technology, is discussed. In addition, applications of graphene-based materials are also summarized in detecting toxic heavy metal ions (Cd, Hg, Pb, Cr, Fe, Ni, Co, Cu, Ag), and volatile organic compounds (VOCs) including nitrobenzene, toluene, acetone, formaldehyde, amines, phenols, bisphenol A (BPA), explosives, chemical warfare agents, and environmental pollutants. The sensitivity, selectivity and strategies for excluding interferents are also discussed for graphene-based gas and chemical sensors. The challenges for developing future generation of flexible and stretchable sensors for wearable technology that would be usable for the Internet of Things (IoT) are also highlighted.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps

This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. Printed electronics are a burgeoning area in electronics development, but are often stymied by the large minimum feature size. To combat this, techniques were developed to allow for the printings of much shorter transistor channels. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exceptional experimentally measured on/off ratio of 10⁶. This all inkjet printed transistor allows for the fabrication of devices using roll-to-roll methodologies with no additional overhead compared to current state of the art production methods.

Advances in the fabrication of graphene transistors on flexible substrates

Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly(ethylene naphthalate) (PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al₂O₃ insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al₂O₃ film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 °C) have been developed without any relevant degradation of the final dielectric performance.

Temperature and Thickness Dependences of the Anisotropic In-Plane Thermal Conductivity of Black Phosphorus

The anisotropic basal-plane thermal conductivities of thin black phosphorus obtained from a new four-probe measurement exhibit much higher peak values at low temperatures than previous reports. First principles calculations reveal the important role of crystal defects and weak thickness dependence that is opposite to the case of graphene and graphite due to the absence of reflection symmetry in puckered phosphorene.

Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions

During the past few years, two-dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices.

Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates

Graphene has been regarded as a promising candidate channel material for flexible devices operating at radio-frequency (RF). In this work we fabricated and fully characterized double bottom-gate graphene field effect transistors on flexible polymer substrates for high frequency applications. We report a record high as-measured current gain cut-off frequency (ft) of 39 GHz. The corresponding maximum oscillation frequency (fmax) is 13.5 GHz. These state of the art high frequency performances are stable against bending, with a typical variation of around 10%, for a bending radius of up to 12 mm. To demonstrate the reliability of our devices, we performed a fatigue stress test for RF-GFETs which were dynamically bend tested 1000 times at 1 Hz. The devices are mechanically robust, and performances are stable with typical variations of 15%. Finally we investigate thermal dissipation, which is a critical parameter for flexible electronics. We show that at the optimum polarization the normalized power dissipated by the GFETs is about 0.35 mW μm(-2) and that the substrate temperature is around 200 degree centigrade. At a higher power, irreversible degradations of the performances are observed. Our study on state of the art flexible GFETs demonstrates mechanical robustness and stability upon heating, two important elements to assess the potential of GFETs for flexible electronics.

Charge density waves in strongly correlated electron systems

Strong electron correlations are at the heart of many physical phenomena of current interest to the condensed matter community. Here we present a survey of the mechanisms underlying such correlations in charge density wave (CDW) systems, including the current theoretical understanding and experimental evidence for CDW transitions. The focus is on emergent phenomena that result as CDWs interact with other charge or spin states, such as magnetism and superconductivity. In addition to reviewing the CDW mechanisms in 1D, 2D, and 3D systems, we pay particular attention to the prevalence of this state in two particular classes of compounds, the high temperature superconductors (cuprates) and the layered transition metal dichalcogenides. The possibilities for quantum criticality resulting from the competition between magnetic fluctuations and electronic instabilities (CDW, unconventional superconductivity) are also discussed.

Graphene-Based Flexible and Stretchable Electronics

Graphene provides outstanding properties that can be integrated into various flexible and stretchable electronic devices in a conventional, scalable fashion. The mechanical, electrical, and optical properties of graphene make it an attractive candidate for applications in electronics, energy-harvesting devices, sensors, and other systems. Recent research progress on graphene-based flexible and stretchable electronics is reviewed here. The production and fabrication methods used for target device applications are first briefly discussed. Then, the various types of flexible and stretchable electronic devices that are enabled by graphene are discussed, including logic devices, energy-harvesting devices, sensors, and bioinspired devices. The results represent important steps in the development of graphene-based electronics that could find applications in the area of flexible and stretchable electronics.

Fast Flexible Transistors with a Nanotrench Structure

The simplification of fabrication processes that can define very fine patterns for large-area flexible radio-frequency (RF) applications is very desirable because it is generally very challenging to realize submicron scale patterns on flexible substrates. Conventional nanoscale patterning methods, such as e-beam lithography, cannot be easily applied to such applications. On the other hand, recent advances in nanoimprinting lithography (NIL) may enable the fabrication of large-area nanoelectronics, especially flexible RF electronics with finely defined patterns, thereby significantly broadening RF applications. Here we report a generic strategy for fabricating high-performance flexible Si nanomembrane (NM)-based RF thin-film transistors (TFTs), capable of over 100 GHz operation in theory, with NIL patterned deep-submicron-scale channel lengths. A unique 3-dimensional etched-trench-channel configuration was used to allow for TFT fabrication compatible with flexible substrates. Optimal device parameters were obtained through device simulation to understand the underlying device physics and to enhance device controllability. Experimentally, a record-breaking 38 GHz maximum oscillation frequency f_max value has been successfully demonstrated from TFTs with a 2 μm gate length built with flexible Si NM on plastic substrates.

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm(2)/V·s and current density of ∼100 μA/μm at VDS = -2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the improved air-stability of fabricated BP devices. In addition, the high-frequency performance was investigated through mechanical bending test up to ∼1.5% tensile strain, which is ultimately limited by the inorganic dielectric film rather than the 2D material. Comparison of BP RF devices to other 2D semiconductors clearly indicates that BP offers the highest saturation velocity, an important metric for high-speed and RF flexible nanosystems.

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.

Effective characterization of polymer residues on two-dimensional materials by Raman spectroscopy

Large-area two-dimensional (2D) materials grown by chemical vapor deposition need to be transferred onto a target substrate for real applications. Poly(methyl methacrylate) as a supporting layer is widely used during the transfer process and removed after finishing it. However, it is a challenge to diminish the polymer layer completely. It is necessary to readily characterize the polymer residues on 2D materials to facilitate the removal process. Here, we report a method that characterizes the polymer residues on 2D materials by tracking the presence of G-band of amorphous carbons (a-Cs) in the Raman spectrum after forming carbonized a-Cs through thermal annealing. The (13)C-graphene is employed to separate the Raman signal G-band between (12)C-a-Cs and (13)C-graphene in the Raman spectrum. The residence of the polymer residues is clearly confirmed by the different Raman signals of two different isotopes ((12)C and (13)C) due to differences in mass. Our effective method recognizes that while the polymer residue is not easily removed on graphene, those on hexagonal boron nitride and molybdenum disulfide are almost diminished under optimum thermal annealing conditions. Our method will not only contribute to the development of a new transfer process, but also help to achieve a clean surface of 2D materials.

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resistance, r0 = 2000 Ω), and high mechanical flexibility (strain limits of 1%). These values of μFE and r0 are unprecedented in flexible GFETs. Flexible radio frequency FETs (RF-FETs) with channel lengths of 375 nm demonstrate μFE = 2200 cm(2) V(-1) s(-1) and r0 = 132.5 Ω. Unity-current gain frequencies, fT, and unity-power gain frequencies, fmax, reach 12.0 and 10.6 GHz, respectively. The corresponding ratio of cutoff frequencies approaches unity (fmax/fT = 0.9), a record value for flexible GFETs. Intrinsic fT and fmax are 29.7 and 15.7 GHz, respectively. The outstanding electronic characteristics are attributed to the improved dielectric environment provided by full hBN encapsulation of the graphene channel in conjunction with an optimized, self-aligned device structure. These results establish hBN as a mechanically robust dielectric that can yield enhanced electronic characteristics to a diverse array of graphene-based flexible electronics.

Radio Frequency Transistors and Circuits Based on CVD MoS2

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Modifying Surface Energy of Graphene via Plasma-Based Chemical Functionalization to Tune Thermal and Electrical Transport at Metal Interfaces

The high mobility exhibited by both supported and suspended graphene, as well as its large in-plane thermal conductivity, has generated much excitement across a variety of applications. As exciting as these properties are, one of the principal issues inhibiting the development of graphene technologies pertains to difficulties in engineering high-quality metal contacts on graphene. As device dimensions decrease, the thermal and electrical resistance at the metal/graphene interface plays a dominant role in degrading overall performance. Here we demonstrate the use of a low energy, electron-beam plasma to functionalize graphene with oxygen, fluorine, and nitrogen groups, as a method to tune the thermal and electrical transport properties across gold-single layer graphene (Au/SLG) interfaces. We find that while oxygen and nitrogen groups improve the thermal boundary conductance (hK) at the interface, their presence impairs electrical transport leading to increased contact resistance (ρC). Conversely, functionalization with fluorine has no impact on hK, yet ρC decreases with increasing coverage densities. These findings indicate exciting possibilities using plasma-based chemical functionalization to tailor the thermal and electrical transport properties of metal/2D material contacts.

Ubiquitous Graphene Electronics on Scotch Tape

We report a novel concept of graphene transistors on Scotch tape for use in ubiquitous electronic systems. Unlike common plastic substrates such as polyimide and polyethylene terephthalate, the Scotch tape substrate is easily attached onto various objects such as banknotes, curved surfaces, and human skin, which implies potential applications wherein electronics can be placed in any desired position. Furthermore, the soft Scotch tape serves as an attractive substrate for flexible/foldable electronics that can be significantly bent, or even crumpled. We found that the adhesive layer of the tape with a relatively low shear modulus relaxes the strain when subjected to bending. The capacitance of the gate dielectric made of oxidized aluminum oxide was 1.5 μF cm⁻², so that a supply voltage of only 2.5 V was sufficient to operate the devices. As-fabricated graphene transistors on Scotch tape exhibited high electron mobility of 1326 (±155) cm² V⁻¹ s⁻¹; the transistors still showed high mobility of 1254 (±478) cm² V⁻¹ s⁻¹ even after they were crumpled.

Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors

Here we report on dramatic and favorable changes to the operating characteristics in monolayer graphene field-effect transistors (FETs) exposed to vapor-phase, polar organic molecules in ambient. These changes include significant reduction of the Dirac voltage, accompanied by both an increase in electron and hole mobility, μ, and a decrease in residual carrier density, N0, to < 3 × 10(11) cm(-2). In contrast to graphene FET modulation with various liquid- and solid-phase dielectric media present in the literature, we attribute these changes to screening by polar vapor-phase molecules of fields induced by charged impurities and defects, n(imp), in or near the active layer. The magnitude of the changes produced in the graphene FET parameters scales remarkably well with the dipole moment of the delivered molecules. These effects are reversible, a unique advantage of working in the vapor phase. The changes observed upon polar molecule delivery are analogous to those produced by depositing and annealing fluoropolymer coatings on graphene that have been reported previously, and we attribute these changes to similar charge screening or neutralization phenomena.

High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits

Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V(-1) s(-1) (12,300 cm(2) V(-1) s(-1)) with the highest value over 24,000 cm(2) V(-1) s(-1) (20,000 cm(2) V(-1) s(-1)) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (∼97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics.

All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters

We present prominent tunable and switchable room-temperature rectification performed at 100 kHz ac input utilizing micrometer-scale three-terminal junction field-effect devices. Monolayer CVD graphene is used as both a channel and a gate electrode to achieve all-graphene thin-film structure. Instead of ballistic theory, we explain the rectification characteristics through an electric-field capacitive model based on self-gating in the high source-drain bias regime. Previously, nanoscale graphene three-terminal junctions with the ballistic (or quasi-ballistic) operation have shown rectifications with relatively low efficiency. Compared to strict nanoscale requirements of ballistic devices, diffusive operation gives more freedom in design and fabrication, which we have exploited in the cascading device architecture. This is a significant step for all-graphene thin-film devices for integrated monolithic graphene circuits.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Toward air-stable multilayer phosphorene thin-films and transistors

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating, highlighting the ineffectiveness of conventional scaled dielectrics. Our months-long studies indicate that a double layer capping of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

On the antibacterial mechanism of graphene oxide (GO) Langmuir–Blodgett films

The Langmuir–Blodgett (LB) technique was used to immobilize flat graphene oxide (GO) sheets on a PET substrate to ascertain as to whether the edges of GO play an integral part in its antimicrobial mechanism. The observed antibacterial activity suggests that contact with the edges is not a fundamental part of the mechanism.

Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors

The largest applications of high-performance graphene will likely be realized when combined with ubiquitous Si very large scale integrated (VLSI) technology, affording a new portfolio of "back end of the line" devices including graphene radio frequency transistors, heat and transparent conductors, interconnects, mechanical actuators, sensors, and optical devices. To this end, we investigate the scalable growth of polycrystalline graphene through chemical vapor deposition (CVD) and its integration with Si VLSI technology. The large-area Raman mapping on CVD polycrystalline graphene on 150 and 300 mm wafers reveals >95% monolayer uniformity with negligible defects. About 26,000 graphene field-effect transistors were realized, and statistical evaluation indicates a device yield of ∼ 74% is achieved, 20% higher than previous reports. About 18% of devices show mobility of >3000 cm(2)/(V s), more than 3 times higher than prior results obtained over the same range from CVD polycrystalline graphene. The peak mobility observed here is ∼ 40% higher than the peak mobility values reported for single-crystalline graphene, a major advancement for polycrystalline graphene that can be readily manufactured. Intrinsic graphene features such as soft current saturation and three-region output characteristics at high field have also been observed on wafer-scale CVD graphene on which frequency doubler and amplifiers are demonstrated as well. Our growth and transport results on scalable CVD graphene have enabled 300 mm synthesis instrumentation that is now commercially available.

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.