n- and p-Type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides

Recent progress in nanomaterial-based bioelectronic devices for biocomputing system

Bioelectronic devices have received the massive attention because of their huge potential to develop the core electronic components for biocomputing system. Up to now, numerous bioelectronic devices have been reported such as biomemory and biologic gate by employment of biomolecules including metalloproteins and nucleic acids. However, the intrinsic limitations of biomolecules such as instability and low signal production hinder the development of novel bioelectronic devices capable of performing various novel computing functions. As a way to overcome these limitations, nanomaterials have the great potential and wide applicability to grant and extend the electronic functions, and improve the inherent properties from biomolecules. Accordingly, lots of nanomaterials including the conductive metal, graphene, and transition metal dichalcogenide nanomaterials are being used to develop the remarkable functional bioelectronic devices like the multi-bit biomemory and resistive random-access biomemory. This review discusses the nanomaterial-based superb bioelectronic devices including the biomemory, biologic gates, and bioprocessors. In conclusion, this review will provide the interdisciplinary information about utilization of various novel nanomaterials applicable for biocomputing system.

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

In recent years, two-dimensional (2D) semiconductors have attracted considerable attention from both academic and industrial communities. Recent research has begun transforming from constructing basic field-effect transistors (FETs) into designing functional circuits. However, device processing remains a bottleneck in circuit-level integration. In this work, a non-destructive doping strategy is proposed to modulate precisely the threshold voltage (V_TH) of MoS₂-FETs in a wafer scale. By inserting an Al interlayer with a varied thickness between the high-k dielectric and the Au top gate (TG), the doping could be controlled. The full oxidation of the Al interlayer generates a surplus of oxygen vacancy (Vo) in the high-k dielectric layer, which further leads to stable electron doping. The proposed strategy is then used to optimize an inverter circuit by matching the electrical properties of the load and driver transistors. Furthermore, the doping strategy is used to fabricate digital logic blocks with desired logic functions, which indicates its potential to fabricate fully integrated multistage logic circuits based on wafer-scale 2D semiconductors.

Fabrication Technologies for the On-Chip Integration of 2D Materials

With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.

Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF

To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe₂ (or MoS₂ ) channels using a polydimethylsiloxane stamp. MoO₃ or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe₂ -based complementary inverter because MoO₃ - and LiF-doping by separate stamps effectively modifies two ambipolar MoTe₂ channels to p- and n-type, respectively.

Hydration and Charge-Transfer Effects of Alkaline Earth Metal Ions Binding to a Carboxylate Anion, Phosphate Anion, and Guanine Nucleobase

To investigate the ability of alkaline earth metal ions to tune ion-mediated DNA adsorption, hydrated Mg²⁺, Ca²⁺, Sr²⁺, and Ba²⁺ ions bound to a carboxylate anion, phosphate anion, and guanine nucleobase were modeled using density functional theory (DFT) and a combined explicit and continuum solvent model. The large first solvation shell of Ba²⁺ requires a larger solute cavity defined by a solvent-accessible surface, which is used to model all hydrated ions. Alkaline earth metal ions bind indirectly or directly to each binding site. DFT binding energies decrease with increasing ion size, which is likely due to ion size and hydration structure, rather than quantum effects such as charge transfer. However, charge transfer explains weaker ion binding to guanine compared to phosphate or carboxylate. Overall, carboxylate and phosphate anions are expected to compete equally for hydrated Mg²⁺, Ca²⁺, Sr²⁺, and Ba²⁺ ions and larger alkaline earth metal ions may induce weaker ion-mediated adsorption. The ion size and hydration structure of alkaline earth metal ions may effectively tune ion-mediated adsorption processes, such as DNA adsorption to functionalized surfaces.

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

Bio-Separated and Gate-Free 2D MoS2 Biosensor Array for Ultrasensitive Detection of BRCA1

2D molybdenum disulfide (MoS₂)-based thin film transistors are widely used in biosensing, and many efforts have been made to improve the detection limit and linear range. However, in addition to the complexity of device technology and biological modification, the compatibility of the physical device with biological solutions and device reusability have rarely been considered. Herein, we designed and synthesized an array of MoS₂ by employing a simple-patterned chemical vapor deposition growth method and meanwhile exploited a one-step biomodification in a sensing pad based on DNA tetrahedron probes to form a bio-separated sensing part. This solves the signal interference, solution erosion, and instability of semiconductor-based biosensors after contacting biological solutions, and also allows physical devices to be reused. Furthermore, the gate-free detection structure that we first proposed for DNA (BRCA1) detection demonstrates ultrasensitive detection over a broad range of 1 fM to 1 μM with a good linear response of R² = 0.98. Our findings provide a practical solution for high-performance, low-cost, biocompatible, reusable, and bio-separated biosensor platforms.

Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To explore different applications and device structures based on 2D TMDs, intrinsic material properties, their relationships, and evolutions with fabrication parameters need to be deeply understood, very often through a combination of various characterization techniques. Among them, steady-state photoluminescence (PL) spectroscopy has been extensively employed. This class of techniques is fast, contactless, and nondestructive and can provide very high spatial resolution. Therefore, it can be used to obtain optoelectronic properties from samples of various sizes (from microns to centimeters) during the fabrication process without complex sample preparation. In this article, the mechanism and applications of steady-state PL spectroscopy in 2D TMDs are reviewed. The first part of this review details the physics of PL phenomena in semiconductors and common techniques to acquire and analyze PL spectra. The second part introduces various applications of PL spectroscopy in 2D TMDs. Finally, a broader perspective is discussed to highlight some limitations and untapped opportunities of PL spectroscopy in characterizing 2D TMDs.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.

Mechanism for hydrogen evolution from water splitting based on a MoS2/WSe2 heterojunction photocatalyst: a first-principle study

In this study, density functional theory and hybrid functional theory are used to calculate the work function and energy band structure of MoS₂ and WSe₂, as well as the binding energy, work function, energy band structure, density of states, charge density difference, energy band alignment, Bader charge, and H adsorption free energy of MoS₂/WSe₂. The difference in work function led to the formation of a built-in electric field from WSe₂ to MoS₂, and the energy band alignment indicated that the redox reactions were located on the MoS₂ and WSe₂ semiconductors, respectively. The binding energy of MoS₂ and WSe₂ indicated that the thermodynamic properties of the heterogeneous structure were stable. MoS₂ and WSe₂ gathered electrons and holes, respectively, and redistributed them under the action of the built-in electric field. The photogenerated electrons and holes were enriched on the surface of WSe₂ and MoS₂, which greatly improved the efficiency of hydrogen production by photocatalytic water splitting.

The mechanism of heterojunction photocatalytic splitting of water for hydrogen evolution.

Molecular dynamics simulations of alkaline earth metal ions binding to DNA reveal ion size and hydration effects

Classical molecular dynamics simulations reveal size-dependent trends of alkaline earth metal ions binding to DNA are due to ion size and hydration behavior.

Large-Scale Fabrication of Copper-Ion-Coated Deoxyribonucleic Acid Hybrid Fibers by Ion Exchange and Self-Metallization

It has been a challenge to achieve deoxyribonucleic acid (DNA) metallization and mass production with a high quality. The main aim of this study was to develop a large-scale production method of metal-ion-coated DNA hybrid fibers, which can be useful for the development of physical devices and sensors. Cetyltrimethylammonium-chloride-modified DNA molecules (CDNA) coated with metal ions through self-metallization exhibit enhanced optical and magnetic properties and thermal stability. In this paper, we present a simple synthesis route for Cu²⁺-coated CDNA hybrid fibers through ion exchange followed by self-metallization and analyze their structural and chemical composition (by X-ray diffraction (XRD), high-resolution field emission transmission electron microscopy (FETEM), and energy-dispersive X-ray spectroscopy (EDS)) and optical (by ultraviolet (UV)-visible absorption, Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopies (XPS)), magnetic (by vibrating-sample magnetometry), and thermal (by a thermogravimetric analysis) characteristics. The XRD patterns, high-resolution FETEM images, and selected-area electron diffraction patterns confirmed the triclinic structure of Cu²⁺ in CDNA. The EDS results revealed the formation of Cu²⁺-coated CDNA fibers with a homogeneous distribution of Cu²⁺. The UV-vis, FTIR, and XPS spectra showed the electronic transition, interaction, and energy transfer between CDNA and Cu²⁺, respectively. The Cu²⁺-coated CDNA fibers exhibited a ferromagnetic nature owing to the presence of Cu²⁺. The magnetization of the Cu²⁺-coated CDNA fibers increased with the concentration of Cu²⁺ and decreased with the increase in temperature. Endothermic (absorbed heat) and exothermic (released heat) peaks in the differential thermal analysis curve were observed owing to the interaction of Cu²⁺ with the phosphate backbone.

Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact

Energy barrier formed at a metal/semiconductor interface is a critical factor determining the performance of nanoelectronic devices. Although diverse methods for reducing the Schottky barrier height (SBH) via interface engineering have been developed, it is still difficult to achieve both an ultralow SBH and a low dependence on the contact metals. In this study, a novel structure, namely, a metal/transition-metal dichalcogenide (TMD) interlayer (IL)/dielectric IL/semiconductor (MTDS) structure, was developed to overcome these issues. Molybdenum disulfide (MoS₂) is a promising TMD IL material owing to its interface characteristics, which yields a low SBH and reduces the reliance on contact metals. Moreover, an ultralow SBH is achieved via the insertion of an ultrathin ZnO layer between MoS₂ and a semiconductor, thereby inducing an n-type doping effect on the MoS₂ IL and forming an interface dipole in the favorable direction at the ZnO IL/semiconductor interfaces. Consequently, the lowest SBH (0.07 eV) and a remarkable improvement in the reverse current density (by a factor of approximately 5400) are achieved, with a wide room for contact-metal dependence. This study experimentally and theoretically validates the effect of the proposed MTDS structure, which can be a key technique for next-generation nanoelectronics.

Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors

We demonstrate the application of MXenes, metallic 2D materials of transition-metal carbides, as excellent electrode materials for photonic devices. In this study, we have fabricated an InSe-based photodetector with a Ti₂CT_x electrode. The photodetector with few-layer, atomically thin, Ti₂CT_x (MXene) electrodes shows the avalanche carrier multiplication effect, which leads to high device performance. To improve the performance of the InSe/Ti₂CT_x avalanche photodetector, we can pattern Ti₂CT_x into nanoribbon arrays (a plasmonic grating structure), which enhances light absorption of the photodetector. The plasmonic InSe/Ti₂CT_x avalanche photodetector exhibits low dark current (3 nA), high responsivity (1 × 10⁵ AW^-1), and high detectivity (7.3 × 10¹² Jones).

MoS2 Field-Effect Transistor-Amyloid-β1-42 Hybrid Device for Signal Amplified Detection of MMP-9

The detection of circulating protein (CP) is very important for the diagnosis and therapeutics of cancer. Conventional techniques based on a specific antibody-antigen interaction are still lacking because of a shortage of cost effectiveness, complicated sandwich structure and tagging process, and inconsistent detection of CP due to the inherent instability of antibodies. Herein, we demonstrate a hybrid device consisting of two-dimensional (2D) nanoscale molybdenum disulfide (MoS₂) field-effect transistor (FET) with an amyloid-β_1-42 (Aβ_1-42) functionalized surface, which amplifies electric signals of the FET in order to detect matrix metalloproteinase-9 (MMP-9), which is a certain type of CP that degrades Aβ_1-42. With the hybrid device, we detected the concentrations of MMP-9 in the range from 1 pM to 10 nM. Moreover, using tapping-mode atomic force microscopy and Kelvin probe force microscopy, we verified that the signal amplification corresponding to the MMP-9 concentrations was caused by the reduced length and the decreased surface potential of degraded Aβ_1-42 due to MMP-9. The hybrid device studied in this paper can be very useful for monitoring MMP-9 activity, as well as serving as a sensing platform for the electrical signal amplification of 2D MoS₂ FET-biosensors.

A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices

Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe₂ and WS₂ single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe₂ retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe₂. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.

Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors

Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage ( V_th) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the V_th of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their V_th toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe₂ and n-MoS₂ channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.

Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices

The substitutional doping method is ideally suited to generating doped two-dimensional (2D) materials for practical device applications as it does not damage or destabilize such materials. However, recently reported substitutional doping techniques for 2D materials have given rise to discontinuities and low uniformities, which hamper the extension of such techniques to large-scale production. In the current work, we demonstrated uniform substitutional doping of monolayer MoS₂ in a 2 in. wafer of area >13 cm². The devices based on doped MoS₂ showed extremely high uniformity and stability in electrical properties in ambient conditions for 30 days. The photodetectors based on the doped MoS₂ samples showed an ultrahigh photoresponsivity of 5 × 10⁵ A/W, a detectivity of 5 × 10¹² Jones, and a fast response rate of 5 ms than did those based on undoped MoS₂. This work showed the feasibility of real-life applications based on functionalized 2D semiconductors for next-generation electronic and optoelectronic devices.

Doping engineering and functionalization of two-dimensional metal chalcogenides

Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.

Bacterial Resistance and Prostate Cancer Susceptibility Toward Metal-Ion-doped DNA Complexes

DNA nanotechnology has laid a platform to construct a variety of custom-shaped nanoscale objects for functionalization of specific target materials to achieve programmability and molecular recognition. Herein, we prepared DNA nanostructures [namely, synthetic DNA rings (RDNA) and DNA duplexes extracted from salmon (SDNA)] containing metal ions (M²⁺) such as Cu²⁺, Ni²⁺, and Zn²⁺ as payloads for delivery to exterminate highly pathologic hospital bacterial strains (e.g., Escherichia coli and Bacillus subtilis) and prostate cancer cells (i.e., PC3, LNCaP, TRAMP-C1, 22Rv1, and DU145). Morphologies of these M²⁺-doped RDNA were visualized using atomic force microscopy. Interactions between M²⁺ and DNA were studied using UV-vis and Fourier transform infrared spectroscopy. Quantitative composition and chemical changes in DNA without or with M²⁺ were obtained using X-ray photoelectron spectroscopy. In addition, M²⁺-doped DNA complexes were subjected to antibacterial activity studies. They showed no bacteriostatic or bactericidal effects on bacterial strains used. Finally, in vitro cellular toxicity study was conducted to evaluate the effect of pristine DNA and M²⁺-doped DNA complexes on prostate cancer cells. Cytotoxicities conferred by M²⁺-doped DNA complexes for most cell lines were significantly higher than those of M²⁺ without DNA. Cellular uptake of these complexes was confirmed by fluorescence microscopy using PhenGreen FL indicator. On the basis of our observations, DNA nanostructures can be used as safe and efficient nanocarriers for delivery of therapeutics. They have enhanced therapeutic window than bare metals.

DNA nanostructures doped with lanthanide ions for highly sensitive UV photodetectors

Deoxyribonucleic acid (DNA) and lanthanide ions (Ln³⁺) exhibit exceptional optical properties that are applicable to the development of nanoscale devices and sensors. Although DNA nanostructures and Ln³⁺ ions have been investigated for use in the current state of technology for more than a few decades, researchers have yet to develop DNA and Ln³⁺ based ultra-violet (UV) photodetectors. Here, we fabricate Ln³⁺ (such as holmium (Ho³⁺), praseodymium (Pr³⁺), and ytterbium (Yb³⁺))‒doped double crossover (DX)‒DNA lattices through substrate-assisted growth and salmon DNA (SDNA) thin films via a simple drop-casting method on oxygen (O₂) plasma-treated substrates for high performance UV photodetectors. Topological (AFM), optical (UV-vis absorption and FTIR), spectroscopic (XPS), and electrical (I‒V and photovoltage) measurements of the DX‒DNA and SDNA thin films doped with various concentrations of Ln³⁺ ([Ln³⁺]) are explored. From the AFM analysis, the optimum concentrations of various Ln³⁺ ([Ln³⁺]_O) are estimated (where the phase transition of Ln³⁺‒doped DX‒DNA lattices takes place from crystalline to amorphous) as 1.2 mM for Ho³⁺, 1.5 mM for Pr³⁺, and 1.5 mM for Yb³⁺. The binding modes and chemical states are evaluated through optical and spectroscopic analysis. From UV-vis absorption studies, we found that as the [Ln³⁺] was increased, the absorption intensity decreased up to [Ln³⁺]_O, and increased above [Ln³⁺]_O. The variation in FTIR peak intensities in the nucleobase and phosphate regions, and the changes in XPS peak intensities and peak positions detected in the N 1 s and P 2p core spectra of Ln³⁺‒doped SDNA thin films clearly indicate that the Ln³⁺ ions are properly bound between the bases (through chemical intercalation) and to the phosphate backbone (through electrostatic interactions) of the DNA molecules. Finally, the I‒V characteristics and time-dependent photovoltage of Ln³⁺‒doped SDNA thin films are measured both in the dark and under UV LED illuminations (λ_LED = 382 nm) at various illumination powers. The photocurrent and photovoltage of Ln³⁺‒doped SDNA thin films are enhanced up to the [Ln³⁺]_O compared to pristine SDNA due to the charge carriers generated from both SDNA and Ln³⁺ ions upon the absorption of light. From our observations, the photovoltages as function of illumination power suggest higher responsivities, and the photovoltages as function of time are almost constant which indicates the stability and retention characteristics of the Ln³⁺‒doped SDNA thin films. Hence, our method which provides an efficient doping of Ln³⁺ into the SDNA with a simple fabrication process might be useful in the development of high-performance optoelectronic devices and sensors.

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, dangling bond-free nature, electrostatic integrity, and tunable wide band gaps enable low power consumption, low leakage, ambipolar transport, high mobility, superconductivity, robustness against short channel effects and tunneling in highly scaled devices. However, the progress of 2D-TMDs has been hampered by severe charge transport issues arising from undesired phenomena occurring at the surfaces and interfaces. Therefore, this review provides three distinct engineering strategies embodied with distinct innovative approaches to optimize both carrier injection and transport. First, contact engineering involves 2D-metal contacts and tunneling interlayers to overcome metal-induced interface states and the Fermi level pinning effect caused by low vacancy energy formation. Second, dielectric engineering covers high-k dielectrics, ionic liquids or 2D-insulators to screen scattering centers caused by carrier traps, imperfections and rough substrates, to finely tune the Fermi level across the band gap, and to provide dangling bond-free media. Third, material engineering focuses on charge transfer via substitutional, chemical and plasma doping to precisely modulate the carrier concentration and to passivate defects while preserving material integrity. Finally, we provide an outlook of the conceptual and technical achievements in 2D-TMDs to give a prospective view of the future development of highly scaled nanoelectronic devices.

Metallo-Curcumin-Conjugated DNA Complexes Induces Preferential Prostate Cancer Cells Cytotoxicity and Pause Growth of Bacterial Cells

DNA nanotechnology can be used to create intricate DNA structures due to the ability to direct the molecular assembly of nanostructures through a bottom-up approach. Here, we propose nanocarriers composed of both synthetic and natural DNA for drug delivery. The topological, optical characteristics, and interaction studies of Cu²⁺/Ni²⁺/Zn²⁺-curcumin-conjugated DNA complexes were studied using atomic force microscopy (AFM), UV-vis spectroscopy, Fourier transform infrared and mass spectroscopy. The maximum release of metallo-curcumin conjugates from the DNA complexes, triggered by switching the pH, was found in an acidic medium. The bacterial growth curves of E. coli and B. subtilis displayed a prolonged lag phase when tested with the metallo-curcumin-conjugated DNA complexes. We also tested the in vitro cytotoxicity of the metallo-curcumin-conjugated DNA complexes to prostate cancer cells using an MTS assay, which indicated potent growth inhibition of the cells. Finally, we studied the cellular uptake of the complexes, revealing that DNA complexes with Cu²⁺/Ni²⁺-curcumin exhibited brighter fluorescence than those with Zn²⁺-curcumin.

Stable and Reversible Triphenylphosphine-Based n-Type Doping Technique for Molybdenum Disulfide (MoS2)

A highly stable and reversible n-type doping technique for molybdenum disulfide (MoS₂) transistors and photodetectors is developed in this study. This doping technique is based on triphenylphosphine (PPh₃) and significantly improves the performance of MoS₂ transistor and photodetector devices in terms of the on/off-current ratio (8.72 × 10⁴ → 8.70 × 10⁵), mobility (12.1 → 241 cm²/V·s), and photoresponsivity ( R) (2.77 × 10³ → 3.92 × 10⁵ A/W). The range of doping concentrations is broadly distributed between 1.56 × 10¹¹ and 9.75 × 10¹² cm^-2 and is easily controlled by adjusting the temperature at which the PPh₃ layer is formed. In addition, this doping technique provides two interesting properties that have not been reported for previous molecular doping techniques: (i) high stability leading to small variations in device performance after exposure to air for 14 days (on-current: 1.34% and photoresponsivity: 1.58%) and (ii) reversibility enabling the repetitive formation and removal of PPh₃ molecules (doping and dedoping).

Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors

In recent years when the demand for high-performance biosensors has been aroused, a field-effect transistor (FET)-type biosensor (BioFET) has attracted great interest because of its high sensitivity, label-free detection, fast detection speed, and miniaturization. However, the insulating membrane in the conventional BioFET, which is essential in preventing the surface dangling bonds of typical semiconductors from nonspecific bindings, has limited the sensitivity of biosensors. Here, we present a highly sensitive and reusable membraneless BioFET based on a defect-free van der Waals material, tungsten diselenide (WSe₂). We intentionally generated a few surface defects that serve as extra binding sites for the bioreceptor immobilization through weak oxygen plasma treatment, consequently magnifying the sensitivity values to 2.87 × 10⁵ A/A for 10 mM glucose. The WSe₂ BioFET also maintained its high sensitivity even after several cycles of rinsing and glucose application were repeated.

Two-dimensional transition metal dichalcogenides: interface and defect engineering

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.

Sensitive optical bio-sensing of p-type WSe2 hybridized with fluorescent dye attached DNA by doping and de-doping effects

Layered transition metal dichalcogenides, such as MoS₂, WSe₂ and WS₂, are exciting two-dimensional (2D) materials because they possess tunable optical and electrical properties that depend on the number of layers. In this study, the nanoscale photoluminescence (PL) characteristics of the p-type WSe₂ monolayer, and WSe₂ layers hybridized with the fluorescent dye Cy3 attached to probe-DNA (Cy3/p-DNA), have been investigated as a function of the concentration of Cy3/DNA by using high-resolution laser confocal microscopy. With increasing concentration of Cy3/p-DNA, the measured PL intensity decreases and its peak is red-shifted, suggesting that the WSe₂ layer has been p-type doped with Cy3/p-DNA. Then, the PL intensity of the WSe₂/Cy3/p-DNA hybrid system increases and the peak is blue-shifted through hybridization with relatively small amounts of target-DNA (t-DNA) (50-100 nM). This effect originates from charge and energy transfer from the Cy3/DNA to the WSe₂. For t-DNA detection, our systems using p-type WSe₂ have the merit in terms of the increase of PL intensity. The p-type WSe₂ monolayers can be a promising nanoscale 2D material for sensitive optical bio-sensing based on the doping and de-doping responses to biomaterials.

Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials

Multivalued logic (MVL) devices/circuits have received considerable attention because the binary logic used in current Si complementary metal-oxide-semiconductor (CMOS) technology cannot handle the predicted information throughputs and energy demands of the future. To realize MVL, the conventional transistor platform needs to be redesigned to have two or more distinctive threshold voltages (V_THs). Here, we report a finding: the photoinduced drain current in graphene/WSe₂ heterojunction transistors unusually decreases with increasing gate voltage under illumination, which we refer to as the light-induced negative differential transconductance (L-NDT) phenomenon. We also prove that such L-NDT phenomenon in specific bias ranges originates from a variable potential barrier at a graphene/WSe₂ junction due to a gate-controllable graphene electrode. This finding allows us to conceive graphene/WSe₂-based MVL logic circuits by using the I_D-V_G characteristics with two distinctive V_THs. Based on this finding, we further demonstrate a light-triggered ternary inverter circuit with three stable logical states (ΔV_out of each state <0.05 V). Our study offers the pathway to substantialize MVL systems.

Computational design of three Cu-induced triangular pyrimidines based DNA motifs with improved conductivity

Novel DNA triangular pyrimidine derivatives are designed by metal decoration through replacement of H by Cu in the Watson–Crick hydrogen bond region. The DFT method is used to examine the coordination of triangle-arranged Cu with three pyrimidines in nonplanar three-bladed turbine geometries. The Cu···Cu cuprophilic bonds are ascribed to the partially occupied d orbitals without direct molecular orbital (MO) interactions. Four-center bonds depend on Cu–N/O bonds, which are contributed by p orbitals of N/O atoms along or perpendicular to the bond axis. The activity of frontier MOs is modulated, leading to the decrease of gaps, ionization potentials (IPs), and electron affinities (EAs) desired for the improvement of conductivity. The hole trapping ability is assured by virtue of the spin density distributed on Cu. On average, the single electron density is located on π orbitals of three aromatic base rings. There is paramagnetic electron delocalization on the inner d orbitals of triangle region. The analysis of electron localization function ELF-π and electrostatic potential maps reveals that the outer strong π–π stacking interaction together with the inner d orbital channel enable effective transduction of electrical signals along the Cu–DNA nanowires. The 3Cu-induced triangular pyrimidines have important potential applications as structural motifs of molecular electronic devices.

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS₂ ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS₂ -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS₂ thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS₂ in industry, as a guide for 2D material community, are also provided.

M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity

Here, we report a high performance biosensor based on (i) a Cu²⁺-DNA/MoS₂ hybrid structure and (ii) a field effect transistor, which we refer to as a bio-FET, presenting a high sensitivity of 1.7 × 10³ A/A. This high sensitivity was achieved by using a DNA nanostructure with copper ions (Cu²⁺) that induced a positive polarity in the DNA (receptor). This strategy improved the detecting ability for doxorubicin-like molecules (target) that have a negative polarity. Very short distance between the biomolecules and the sensor surface was obtained without using a dielectric layer, contributing to the high sensitivity. We first investigated the effect of doxorubicin on DNA/MoS₂ and Cu²⁺-DNA/MoS₂ nanostructures using Raman spectroscopy and Kelvin force probe microscopy. Then, we analyzed the sensing mechanism and performance in DNA/MoS₂- and Cu²⁺-DNA/MoS₂-based bio-FETs by electrical measurements (I_D-V_G at various V_D) for various concentrations of doxorubicin. Finally, successful operation of the Cu²⁺-DNA/MoS₂ bio-FET was demonstrated for six cycles (each cycle consisted of four steps: 2 preparation steps, a sensing step, and an erasing step) with different doxorubicin concentrations. The bio-FET showed excellent reusability, which has not been achieved previously in 2D biosensors.

An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure

An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 × 10(6) A W(-1) ) and detectivity (1.29 × 10(12) Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This photodetector is based on a methyl-ammonium lead halide perovskite/MoS2 hybrid structure with (3-aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm).

High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment

A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.

Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions

Here, we propose a novel DNA-based doping method on MoS₂ and WSe₂ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures, using the newly proposed concept of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions). The available n-doping range on the MoS₂ by Ln-DNA is between 6 × 10⁹ and 2.6 × 10¹⁰cm⁻². The p-doping change on WSe₂ by Ln-DNA is adjusted between −1.0 × 10¹⁰ and −2.4 × 10¹⁰cm⁻². In Eu³⁺ or Gd³⁺-Co-DNA doping, a light p-doping is observed on MoS₂ and WSe₂ (~10¹⁰cm⁻²). However, in the devices doped by Tb³⁺ or Er³⁺-Co-DNA, a light n-doping (~10¹⁰cm⁻²) occurs. A significant increase in on-current is also observed on the MoS₂ and WSe₂ devices, which are, respectively, doped by Tb³⁺- and Gd³⁺-Co-DNA, due to the reduction of effective barrier heights by the doping. In terms of optoelectronic device performance, the Tb³⁺ or Er³⁺-Co-DNA (n-doping) and the Eu³⁺ or Gd³⁺-Co-DNA (p-doping) improve the MoS₂ and WSe₂ photodetectors, respectively. We also show an excellent absorbing property by Tb³⁺ ions on the TMD photodetectors.

DNA-Assisted Exfoliation of Tungsten Dichalcogenides and Their Antibacterial Effect

This study reports a method for the facile and high-yield exfoliation of WX2 (X = S, Se) by sonication under aqueous conditions using single-stranded DNA (abbreviated as ssDNA) of high molecular weight. The ssDNA provided a high degree of stabilization and prevented reaggregation, and it enhanced the exfoliation efficiency of WX2 nanosheets due to adsorption on the WX2 surface and the electrostatic repulsion of sugars in the ssDNA backbone. The exfoliation yield was higher with ssDNA (80%-90%) than without (2%-4%); the yield with ssDNA was also higher than the value previously reported for aqueous exfoliation (∼10%). Given that two-dimensional nanomaterials have potential health and environmental applications, we investigated antibacterial activity of exfoliated WX2-ssDNA nanosheets, relative to graphene oxide (GO), and found that WSe2-ssDNA nanosheets had higher antibacterial activity against Escherichia coli K-12 MG1655 cells than GO. Our method enables large-scale exfoliation in an aqueous environment in a single step with a short reaction time and under ambient conditions, and it can be used to produce surface-active or catalytic materials that have broad applications in biomedicine and other areas.

Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe₂ field-effect transistor

We report a facile and highly effective n-doping method using hydrazine solution to realize enhanced electron conduction in a WSe2 field-effect transistor (FET) with three different metal contacts of varying work functions-namely, Ti, Co, and Pt. Before hydrazine treatment, the Ti- and Co-contacted WSe2 FETs show weak ambipolar behaviour with electron dominant transport, whereas in the Pt-contacted WSe2 FETs, the p-type unipolar behaviour was observed with the transport dominated by holes. In the hydrazine treatment, a p-type WSe2 FET (Pt contacted) was converted to n-type with enhanced electron conduction, whereas highly n-doped properties were achieved for both Ti- and Co-contacted WSe2 FETs with on-current increasing by three orders of magnitude for Ti. All n-doped WSe2 FETs exhibited enhanced hysteresis in their transfer characteristics, which opens up the possibility of developing memories using transition metal dichalcogenides.

A methanol VOC sensor using divalent metal ion-modified 2D DNA lattices

Metal ion modified DNA synthesized by a substrate-assisted growth method were utilized for a VOC gas sensor. Co-DNA lattices with defined periodicity efficiently yield an enhancement in reflected intensities within TLV of methanol vapor selectively.