Lithographic graphitic memories

2D materials: increscent quantum flatland with immense potential for applications

Quantum flatland i.e., the family of two dimensional (2D) quantum materials has become increscent and has already encompassed elemental atomic sheets (Xenes), 2D transition metal dichalcogenides (TMDCs), 2D metal nitrides/carbides/carbonitrides (MXenes), 2D metal oxides, 2D metal phosphides, 2D metal halides, 2D mixed oxides, etc. and still new members are being explored. Owing to the occurrence of various structural phases of each 2D material and each exhibiting a unique electronic structure; bestows distinct physical and chemical properties. In the early years, world record electronic mobility and fractional quantum Hall effect of graphene attracted attention. Thanks to excellent electronic mobility, and extreme sensitivity of their electronic structures towards the adjacent environment, 2D materials have been employed as various ultrafast precision sensors such as gas/fire/light/strain sensors and in trace-level molecular detectors and disease diagnosis. 2D materials, their doped versions, and their hetero layers and hybrids have been successfully employed in electronic/photonic/optoelectronic/spintronic and straintronic chips. In recent times, quantum behavior such as the existence of a superconducting phase in moiré hetero layers, the feasibility of hyperbolic photonic metamaterials, mechanical metamaterials with negative Poisson ratio, and potential usage in second/third harmonic generation and electromagnetic shields, etc. have raised the expectations further. High surface area, excellent young's moduli, and anchoring/coupling capability bolster hopes for their usage as nanofillers in polymers, glass, and soft metals. Even though lab-scale demonstrations have been showcased, large-scale applications such as solar cells, LEDs, flat panel displays, hybrid energy storage, catalysis (including water splitting and CO2 reduction), etc. will catch up. While new members of the flatland family will be invented, new methods of large-scale synthesis of defect-free crystals will be explored and novel applications will emerge, it is expected. Achieving a high level of in-plane doping in 2D materials without adding defects is a challenge to work on. Development of understanding of inter-layer coupling and its effects on electron injection/excited state electron transfer at the 2D-2D interfaces will lead to future generation heterolayer devices and sensors.

Emerging 2D Memory Devices for In-Memory Computing

It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.

Nonvolatile Memories Based on Graphene and Related 2D Materials

The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

Oxygenated amorphous carbon for resistive memory applications

Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10 ns and cycling endurance in excess of 10(4) times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.

Graphene Anodes and Cathodes: Tuning the Work Function of Graphene by Nearly 2 eV with an Aqueous Intercalation Process

To expand the applications of graphene in optoelectronics and microelectronics, simple and effective doping processes need to be developed. In this paper, we demonstrate an aqueous process that can simultaneously transfer chemical vapor deposition grown graphene from Cu to other substrates and produce stacked graphene/dopant intercalation films with tunable work functions, which differs significantly from conventional doping methods using vacuum evaporation or spin-coating processes. The work function of graphene layers can be tuned from 3.25 to 5.10 eV, which practically covers the wide range of the anode and cathode applications. Doped graphene films in intercalation structures also exhibit excellent transparency and low resistance. The polymer-based solar cells with either low work function graphene as cathodes or high work function graphene as anodes are demonstrated.

Multilayer graphitic coatings for thermal stabilization of metallic nanostructures

We demonstrate that graphitic coatings, which consist of multilayer disordered graphene sheets, can be used for the thermal protection of delicate metal nanostructures. We studied cobalt slanted nanopillars grown by glancing angle deposition that were shown to melt at temperatures much lower than the melting point of bulk cobalt. After graphitic coatings were conformally grown over the surfaces of Co nanopillars by chemical vapor deposition, the resulting carbon-coated Co nanostructures retained their morphology at elevated temperatures, which would damage the uncoated structures. Thermal stabilization is also demonstrated for carbon-coated Ti nanopillars. The results of this study may be extended to other metallic and possibly even nonmetallic nanostructures that need to preserve their morphology at elevated temperatures in a broad range of applications.

Oxidative peeling of carbon black nanoparticles

We demonstrate that layered carbon black nanoparticles can be oxidatively peeledviathe reaction with potassium permanganate in sulfuric acid.

Towards formation of fibrous woven memory devices from all-carbon electronic fibers

High performance all-carbon fibrous woven non-volatile memory devices were created based on carbon nanotube fibers and acid reduced graphene oxide.

Layer-by-layer graphene/TCNQ stacked films as conducting anodes for organic solar cells

Large-area graphene grown by chemical vapor deposition (CVD) is a promising candidate for transparent conducting electrode applications in flexible optoelectronic devices such as light-emitting diodes or organic solar cells. However, the power conversion efficiency (PCE) of the polymer photovoltaic devices using a pristine CVD graphene anode is still not appealing due to its much lower conductivity than that of conventional indium tin oxide. We report a layer-by-layer molecular doping process on graphene for forming sandwiched graphene/tetracyanoquinodimethane (TCNQ)/graphene stacked films for polymer solar cell anodes, where the TCNQ molecules (as p-dopants) were securely embedded between two graphene layers. Poly(3-hexylthiophene)/phenyl-C61-butyric acid methyl ester (P3HT/PCBM) bulk heterojunction polymer solar cells based on these multilayered graphene/TCNQ anodes are fabricated and characterized. The P3HT/PCBM device with an anode structure composed of two TCNQ layers sandwiched by three CVD graphene layers shows optimum PCE (∼2.58%), which makes the proposed anode film quite attractive for next-generation flexible devices demanding high conductivity and transparency.

Multilevel resistive switching in planar graphene/SiO2 nanogap structures

We report a planar graphene/SiO(2) nanogap structure for multilevel resistive switching. Nanosized gaps created on a SiO(2) substrate by electrical breakdown of nanographene electrodes were used as channels for resistive switching. Two-terminal devices exhibited excellent memory characteristics with good endurance up to 10(4) cycles, long retention time more than 10(5) s, and fast switching speed down to 500 ns. At least five conduction states with reliability and reproducibility were demonstrated in these memory devices. The mechanism of the resistance switching effect was attributed to a reversible thermal-assisted reduction and oxidation process that occurred at the breakdown region of the SiO(2) substrate. In addition, the uniform and wafer-size nanographene films with controlled layer thickness and electrical resistivity were grown directly on SiO(2) substrates for scalable device fabrications, making it attractive for developing high-density and low-cost nonvolatile memories.

Organic nonvolatile memory devices with charge trapping multilayer graphene film

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.

Flexible organic memory devices with multilayer graphene electrodes

We fabricated 8 × 8 cross-bar array-type flexible organic resistive memory devices with transparent multilayer graphene (MLG) electrodes on a poly(ethylene terephthalate) substrate. The active layer of the memory devices is a composite of polyimide and 6-phenyl-C61 butyric acid methyl ester. The sheet resistance of the MLG film on memory device was found to be ∼270 Ω/◻, and the transmittance of separated MLG film from memory device was ∼92%. The memory devices showed typical write-once-read-many (WORM) characteristics and an ON/OFF ratio of over ∼10(6). The memory devices also exhibited outstanding cell-to-cell uniformity with flexibility. There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times. A retention time of over 10(4) s was observed without fluctuation under bending.

Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments

We report an improvement in minimizing the dispersion of resistive switching (RS) parameters such as ON/OFF state resistances and switching voltages of Cu/ZnO/Pt structures in which ZnO films have been deposited at elevated temperature with N doping. This deposition process can enlarge the ZnO grain size and lessen grain boundaries while maintaining a high initial resistance since ZnO naturally shows n-type conductivity and N is a p-type dopant but with a low solubility. Cu filaments with a diameter of 15 nm are found to form at the ZnO grain boundaries. Therefore, fewer grain boundaries could depress the randomicity of the formation/rupture of Cu filaments and result in more stable RS performances. Such memory devices show a fast programming speed of 10 ns.

Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies

Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

Microfabrication and integration of diazonium-based aromatic molecular junctions

Microfabrication techniques common in commercial semiconductor manufacturing were used to produce carbon/nitroazobenzene/Cu/Au molecular junctions with a range of areas from 3×3 to 400×400 μm, starting with 100-mm-diameter silicon wafers. The approach exhibited high yield (90-100%) and excellent reproducibility of the current density (relative standard deviation of typically 15%) and 32 devices on a chip. Electron-beam-deposited carbon films are introduced as substrates and may be applied at the full wafer level before dicing and electrochemical deposition of the molecular layer. The current scaled with the device area over a factor of >600, and the current density was quantitatively consistent with structurally similar molecular junctions made by other techniques. The current densities were weakly dependent on temperature over the range of 100-390 K, and maximum current densities above 400 A/cm2 were observed without breakdown. To simulate processing and operation conditions, the junction stability was tested at elevated temperatures. The JV curves of microfabricated junctions were unchanged after 22 h at 100 °C. A ∼50% increase in the current density was observed after 20 h at 150 °C but then remained constant for an additional 24 h. Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.

Resistive switches and memories from silicon oxide

Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiO(x) matrix, with SiO(x) itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles). These properties in a SiO(x)-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible.

Graphene nanoribbon devices produced by oxidative unzipping of carbon nanotubes

We demonstrate that graphene nanoribbons (GNRs), produced by the chemical unzipping of carbon nanotubes, can be conveniently used from solution to hand-paint unidirectional arrays of GNRs atop silicon oxide. Through this simple alignment technique, numerous GNR-based devices, including field effect transistors, sensors, and memories can be easily fabricated on a single chip, and then used to generate statistically relevant device assessments. Such studies immediately give insights into, for example, multilayering properties on conductance, the profound effects that atmospheric adsorbates have upon the transfer characteristics of graphene, and other phenomena affecting the performance of GNR devices.

Application of nanomaterials in two-terminal resistive-switching memory devices

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well.