Technique for the dry transfer of epitaxial graphene onto arbitrary substrates

Graphene MEMS and NEMS

Graphene is being increasingly used as an interesting transducer membrane in micro- and nanoelectromechanical systems (MEMS and NEMS, respectively) due to its atomical thickness, extremely high carrier mobility, high mechanical strength, and piezoresistive electromechanical transductions. NEMS devices based on graphene feature increased sensitivity, reduced size, and new functionalities. In this review, we discuss the merits of graphene as a functional material for MEMS and NEMS, the related properties of graphene, the transduction mechanisms of graphene MEMS and NEMS, typical transfer methods for integrating graphene with MEMS substrates, methods for fabricating suspended graphene, and graphene patterning and electrical contact. Consequently, we provide an overview of devices based on suspended and nonsuspended graphene structures. Finally, we discuss the potential and challenges of applications of graphene in MEMS and NEMS. Owing to its unique features, graphene is a promising material for emerging MEMS, NEMS, and sensor applications.

Observation of reversible and irreversible charge transfer processes in dye-monolayer graphene systems using Raman spectroscopy as a tool

Herein, we report the Raman spectroscopy of crystal violet (CV) and IR-780 Iodide molecules dispersed on the monolayer graphene film (MGF). In the CV-MGF system, the enhancement in the Raman scattering of CV molecules is observed irrespective of the location probed during the spectral measurements. This enhancement is due to the charge transfer from the MGF to CV molecules. However, in the case of the IR-780 Iodide - MGF system, the enhancement of Raman scattering of dye molecules or MGF is observed strongly depending upon the probed location. These observations indicate that the charge transfer is irreversible and reversible in the CV-MGF and IR-780 Iodide-MGF systems, respectively. Importantly, for the first time, this experimental study revealed that enhancing the Raman scattering of MGF is possible through the "chemical mechanism" with suitable dye molecules apart from the "electromagnetic mechanism" with plasmonic hot spots of the metal nanoparticles and photonic nanojets of single dielectric microparticles.

Recent advances in graphene-based electroanalytical devices for healthcare applications

Graphene, with its outstanding mechanical, electrical, and biocompatible properties, stands out as an emerging nanomaterial for healthcare applications, especially in building electroanalytical biodevices. With the rising prevalence of chronic diseases and infectious diseases, such as the COVID-19 pandemic, the demand for point-of-care testing and remote patient monitoring has never been greater. Owing to their portability, ease of manufacturing, scalability, and rapid and sensitive response, electroanalytical devices excel in these settings for improved healthcare accessibility, especially in resource-limited settings. The development of different synthesis methods yielding large-scale graphene and its derivatives with controllable properties, compatible with device manufacturing - from lithography to various printing methods - and tunable electrical, chemical, and electrochemical properties make it an attractive candidate for electroanalytical devices. This review article sheds light on how graphene-based devices can be transformative in addressing pressing healthcare needs, ranging from the fundamental understanding of biology in in vivo and ex vivo studies to early disease detection and management using in vitro assays and wearable devices. In particular, the article provides a special focus on (i) synthesis and functionalization techniques, emphasizing their suitability for scalable integration into devices, (ii) various transduction methods to design diverse electroanalytical device architectures, (iii) a myriad of applications using devices based on graphene, its derivatives, and hybrids with other nanomaterials, and (iv) emerging technologies at the intersection of device engineering and advanced data analytics. Finally, some of the major hurdles that graphene biodevices face for translation into clinical applications are discussed.

Two-dimensional materials as catalysts, interfaces, and electrodes for an efficient hydrogen evolution reaction

Two-dimensional (2D) materials have been significantly investigated as electrocatalysts for the hydrogen evolution reaction (HER) over the past few decades due to their excellent electrocatalytic properties and their structural uniqueness including the atomically thin structure and abundant active sites. Recently, 2D materials with various electronic properties have not only been used as active catalytic materials, but also employed in other components of the HER electrodes including a conductive electrode layer and an interfacial layer to maximize the HER efficiency or utilized as templates for catalytic nanostructure growth. This review provides the recent progress and future perspectives of 2D materials as key components in electrocatalytic systems with an emphasis on the HER applications. We categorized the use of 2D materials into three types: a catalytic layer, an electrode for catalyst support, and an interlayer for enhancing charge transfer between the catalytic layer and the electrode. We first introduce various scalable synthesis methods of electrocatalytic-grade 2D materials, and we discuss the role of 2D materials as HER catalysts, an interface for efficient charge transfer, and an electrode and/or a growth template of nanostructured noble metals.

Deciphering the ultra-high plasticity in metal monochalcogenides

The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.

Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS2 via Vertical Double-Side Contacts

Two-dimensional (2D) van der Waals (vdW) layered materials have provided novel opportunities to explore interesting physical properties such as thickness-dependent bandgap, moiré excitons, superconductivity, and superfluidity. However, the presence of interlayer resistance along the thickness and Schottky barrier in metal-to-2D vdW semiconducting materials causes a limited interlayer charge injection efficiency, perturbing various intrinsic properties of 2D vdW multilayers. Herein, we report a simple but powerful contact electrode design to enhance interlayer carrier injection efficiency along the thickness by constructing vertical double-side contact (VDC) electrodes. A 2-fold extended contact area of VDC not only strongly limits an interlayer resistance contribution to the field-effect mobility and current density at the metal-to-2D semiconductor interface but also significantly suppresses both current transfer length (≤1 μm) and specific contact resistivity (≤1 mΩ·cm²), manifesting clear benefits of VDC in comparison with those in conventional top-contact and bottom-contact configurations. Our layout for contact electrode configuration may suggest an advanced electronic device platform for high-performing 2D optoelectronic devices.

Controlled Adhesion of Ice-Toward Ultraclean 2D Materials

The scalable 2D device fabrication and integration demand either the large-area synthesis or the post-synthesis transfer of 2D layers. While the direct synthesis of 2D materials on most targeted surfaces remains challenging, the transfer approach from the growth substrate onto the targeted surfaces offers an alternative pathway for applications and integrations. However, the current transfer techniques for 2D materials predominantly involve polymers and organic solvents, which are liable to contaminate or deform the ultrasensitive atomic layers. Here, novel ice-aided transfer and ice-stamp transfer methods are developed, in which water (ice) is the only medium in the entire process. In practice, the adhesion between various 2D materials and ice can be well controlled by temperature. Through such controlled adhesion of ice, it is shown that the new transfer methods can yield ultrahigh quality and exceptional cleanliness in transferred 2D flakes and continuous 2D films, and are applicable for a wide range of substrates. Furthermore, beyond transfer, ice can also be used for cleaning the surfaces of 2D materials at higher temperatures. These novel techniques can enable unprecedented ultraclean 2D materials surfaces and performances, and will contribute to the upcoming technological revolutions associated with 2D materials.

Defect seeded remote epitaxy of GaAs films on graphene

Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.

In Situ Construction of a LiF-Enriched Interfacial Modification Layer for Stable All-Solid-State Batteries

All-solid-state batteries (ASSBs), particularly based on sulfide solid-state electrolytes (SSEs), are expected to meet the requirements of high-energy-density energy storage. However, the unstable interface between the ceramic pellets and lithium (Li) metal can induce unconstrained Li-dendrite growth with safety concerns. Herein, we design a carbon fluoride-silver (CF_x-Ag) composite to modify the SSEs. As lithium fluoride (LiF) nanocrystals can be in situ formed through electrochemical reactions, this LiF-enriched modification layer with high surface energy can more effectively suppress Li dendrite penetration and interfacial reactions between the SSEs and anode. Remarkably, the all-solid-state symmetric cells using a lithium-boron alloy (LiB) anode can stably work to above 2,500 h under 0.5 mA cm^-2 and 2 mAh cm^-2 at 60 °C without shorting. A modified LiB||LiNi_0.6Mn_0.2Co_0.2O₂ (NMC622) full cell also demonstrates an improved capacity retention and high Coulombic efficiency (99.9%) over 500 cycles. This work provides an advanced solid-state interface architecture to address Li-dendrite issues of ASSBs.

Emerging Optoelectronic Devices Based on Microscale LEDs and Their Use as Implantable Biomedical Applications

Thin-film microscale light-emitting diodes (LEDs) are efficient light sources and their integrated applications offer robust capabilities and potential strategies in biomedical science. By leveraging innovations in the design of optoelectronic semiconductor structures, advanced fabrication techniques, biocompatible encapsulation, remote control circuits, wireless power supply strategies, etc., these emerging applications provide implantable probes that differ from conventional tethering techniques such as optical fibers. This review introduces the recent advancements of thin-film microscale LEDs for biomedical applications, covering the device lift-off and transfer printing fabrication processes and the representative biomedical applications for light stimulation, therapy, and photometric biosensing. Wireless power delivery systems have been outlined and discussed to facilitate the operation of implantable probes. With such wireless, battery-free, and minimally invasive implantable light-source probes, these biomedical applications offer excellent opportunities and instruments for both biomedical sciences research and clinical diagnosis and therapy.

Roll-to-Roll Dry Transfer of Large-Scale Graphene

A major challenge for graphene applications is the lack of mass production technology for large-scale and high-quality graphene growth and transfer. Here, a roll-to-roll (R2R) dry transfer process for large-scale graphene grown by chemical vapor deposition is reported. The process is fast, controllable, and environmentally benign. It avoids chemical contamination and allows the reuse of graphene growth substrates. By controlling tension and speed of the R2R dry transfer process, the electrical sheet resistance is achieved as 9.5 kΩ sq^-1 , the lowest ever reported among R2R dry transferred graphene samples. The R2R dry transferred samples are used to fabricate graphene-based field-effect transistors (GFETs) on polymer. It is demonstrated that these flexible GFETs feature a near-zero doping level and a gate leakage current one to two orders of magnitude lower than those fabricated using wet-chemical etched graphene samples. The scalability and uniformity of the R2R dry transferred graphene is further demonstrated by successfully transferring a 3 × 3 in² sample and measuring its field-effect mobility with 36 millimeter-scaled GFETs evenly spaced on the sample. The field-effect mobility of the R2R dry transferred graphene is determined to be 205 ± 36 cm²  V^-1 .

Physical and Chemical Sensors on the Basis of Laser-Induced Graphene: Mechanisms, Applications, and Perspectives

Laser-induced graphene (LIG) is produced rapidly by directly irradiating carbonaceous precursors, and it naturally exhibits as a three-dimensional porous structure. Due to advantages such as simple preparation, time-saving, environmental friendliness, low cost, and expanding categories of raw materials, LIG and its derivatives have achieved broad applications in sensors. This has been witnessed in various fields such as wearable devices, disease diagnosis, intelligent robots, and pollution detection. However, despite LIG sensors having demonstrated an excellent capability to monitor physical and chemical parameters, the systematic review of synthesis, sensing mechanisms, and applications of them combined with comparison against other preparation approaches of graphene is still lacking. Here, graphene-based sensors for physical, biological, and chemical detection are reviewed first, followed by the introduction of general preparation methods for the laser-induced method to yield graphene. The preparation and advantages of LIG, sensing mechanisms, and the properties of different types of emerging LIG-based sensors are comprehensively reviewed. Finally, possible solutions to the problems and challenges of preparing LIG and LIG-based sensors are proposed. This review may serve as a detailed reference to guide the development of LIG-based sensors that possess properties for future smart sensors in health care, environmental protection, and industrial production.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Graphene Transfer: A Physical Perspective

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO₂/Si and Si₃N₄/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.

Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS₂) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO₂/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS₂ film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS₂ film. Using the proposed water-assisted and recyclable transfer, MoS₂/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.

Cera alba-assisted ultraclean graphene transfer for high-performance PbI2 UV photodetectors

Large polymer residues introduced by the graphene transfer process is still a major obstacle limiting the integration of chemical vapor deposition (CVD)-grown graphene into next-generation electronic and photoelectronic devices. Here we use cera alba, a natural and environmental-friendly material that derives from honeycomb, as the supporting layer for ultraclean graphene transfer. The transferred graphene has a low surface roughness with a surface height fluctuation within 5 nm and an only 80.08% average sheet resistance of the polymethyl methacrylate (PMMA)-transferred graphene. Further, the ultraclean graphene is used as electrodes for the PbI₂-based UV photodetector and enables a 135% improvement on responsivity. The cera alba assisted transfer method reported here could achieve clean and damage-free graphene transfer, promoting the application of CVD-grown two-dimensional (2D) materials in large-area thin-film electronic and optoelectronic devices.

Facile Morphological Qualification of Transferred Graphene by Phase-Shifting Interferometry

Post-growth graphene transfer to a variety of host substrates for circuitry fabrication has been among the most popular subjects since its successful development via chemical vapor deposition in the past decade. Fast and reliable evaluation tools for its morphological characteristics are essential for the development of defect-free transfer protocols. The implementation of conventional techniques, such as Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy in production quality control at an industrial scale is difficult because they are limited to local areas, are time consuming, and their operation is complex. However, through a one-shot measurement within a few seconds, phase-shifting interferometry (PSI) successfully scans ≈1 mm² of transferred graphene with a vertical resolution of ≈0.1 nm. This provides crucial morphological information, such as the surface roughness derived from polymer residues, the thickness of the graphene, and its adhesive strength with respect to the target substrates. Graphene samples transferred via four different methods are evaluated using PSI, Raman spectroscopy, and AFM. Although the thickness of the nanomaterials measured by PSI can be highly sensitive to their refractive indices, PSI is successfully demonstrated to be a powerful tool for investigating the morphological characteristics of the transferred graphene for industrial and research purposes.

Site-specific electrical contacts with the two-dimensional materials

Electrical contact is an essential issue for all devices. Although the contacts of the emergent two-dimensional materials have been extensively investigated, it is still challenging to produce excellent contacts. The face and edge type contacts have been applied previously, however a comparative study on the site-specific contact performances is lacking. Here we report an in situ transmission electron microscopy study on the contact properties with a series of 2D materials. By manipulating the contact configurations in real time, it is confirmed that, for 2D semiconductors the vdW type face contacts exhibit superior conductivity compared with the non-vdW type contacts. The direct quantum tunneling across the vdW bonded interfaces are virtually more favorable than the Fowler–Nordheim tunneling across chemically bonded interfaces for contacts. Meanwhile, remarkable area, thickness, geometry, and defect site dependences are revealed. Our work sheds light on the significance of contact engineering for 2D materials in future applications.

Here, the authors use in situ transmission electron microscopy to measure the interface properties of electrical contacts with MoS₂, ReS₂, and graphene, and find that direct quantum tunnelling across van-der-Waals-bonded interfaces is more favourable than Fowler–Nordheim tunnelling across chemically bonded interfaces.

Graphene Coating for Enhancing the Atom Oxygen Erosion Resistance of Kapton

Atom oxygen (AO) can cause most spacecraft material erosion seriously. Liquid-exfoliated graphene by jet cavitation was used to coat Kapton employed on spacecraft to enhance its AO erosion resistance. The coating was prepared by vacuum filtering and transferring. After AO exposure, compared with naked Kapton, the mass loss of coated Kapton reduced to 3.73% and the erosion yield reduced to 3.67%. AO reacted with graphene and then was left in the coating. The coating was degenerated slightly, but still performed well. We believe that graphene coating could be potentially applied to increase the material’s life span on spacecraft.

From quantum to continuum mechanics in the delamination of atomically-thin layers from substrates

Anomalous proximity effects have been observed in adhesive systems ranging from proteins, bacteria, and gecko feet suspended over semiconductor surfaces to interfaces between graphene and different substrate materials. In the latter case, long-range forces are evidenced by measurements of non-vanishing stress that extends up to micrometer separations between graphene and the substrate. State-of-the-art models to describe adhesive properties are unable to explain these experimental observations, instead underestimating the measured stress distance range by 2–3 orders of magnitude. Here, we develop an analytical and numerical variational approach that combines continuum mechanics and elasticity with quantum many-body treatment of van der Waals dispersion interactions. A full relaxation of the coupled adsorbate/substrate geometry leads us to conclude that wavelike atomic deformation is largely responsible for the observed long-range proximity effect. The correct description of this seemingly general phenomenon for thin deformable membranes requires a direct coupling between quantum and continuum mechanics.

The unexpectedly long-ranged interface stress observed in recent delamination experiments is yet to be clarified. Here, the authors develop an analytical approach to show the wavelike atomic deformation as the origin for the observed ultra long-range stress in delamination of graphene from various substrates.

High-Yield Production of Aqueous Graphene for Electrohydrodynamic Drop-on-Demand Printing of Biocompatible Conductive Patterns

Presented here is a scalable and aqueous phase exfoliation of graphite to high yield and quality of few layer graphene (FLG) using Bovine Serum Albomine (BSA) and wet ball milling. The produced graphene ink is tailored for printable and flexible electronics, having shown promising results in terms of electrical conductivity and temporal stability. Shear force generated by steel balls which resulted in 2–3 layer defect-free graphene platelets with an average size of hundreds of nm, and with a concentration of about 5.1 mg/mL characterized by Raman spectroscopy, atomic force microscopy (AFM), transmittance electron microscopy (TEM) and UV-vis spectroscopy. Further, a conductive ink was prepared and printed on flexible substrate (Polyimide) with controlled resolution. Scanning electron microscopy (SEM) and Profilometry revealed the effect of thermal annealing on the prints to concede consistent morphological characteristics. The resulted sheet resistance was measured to be Rs = 36.75 Ω/sqr for prints as long as 100 mm. Printable inks were produced in volumes ranging from 20 mL to 1 L, with potential to facilitate large scale production of graphene for applications in biosensors, as well as flexible and printable electronics.

Surface Micro-/Nanotextured Hybrid PEDOT:PSS-Silicon Photovoltaic Cells Employing Kirigami Graphene

Kirigami graphene allows a two-dimensional material to transform into a three-dimensional structure, which constitutes an effective transparent electrode candidate for photovoltaic (PV) cells having a surface texture. The surface texture of an inverted pyramid was fabricated on a Si substrate using photolithography and wet etching, followed by metal-assisted chemical etching to obtain silicon nanowires on the surface of the inverted pyramid. Kirigami graphene with a cross-pattern array was prepared using photolithography and plasma etching on a copper foil. Then, kirigami graphene was transferred onto hybrid heterojunction PV cells with a poly(ethylene terephthalate)/silicone film. These cells consisted of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as the p-type semiconductor, Si(100) as the inorganic n-type semiconductor, and a silver comb electrode on top of PEDOT:PSS. The conductivity of PEDOT:PSS was greatly improved. This improvement was significantly higher than that achieved by the continuous graphene sheet without a pattern. Transmission electron microscopy and Raman spectroscopy results revealed that the greater improvement with kirigami graphene was due to the larger contact area between PEDOT:PSS and graphene. By using two-layer graphene having a kirigami pattern, the power conversion efficiency, under simulated AM1.5G illumination conditions, was significantly augmented by up to 9.8% (from 10.03 to 11.01%).

Ultrathin Graphene Intercalation in PEDOT:PSS/Colorless Polyimide-Based Transparent Electrodes for Enhancement of Optoelectronic Performance and Operational Stability of Organic Devices

A novel flexible transparent electrode (TE) having a trilayer-stacked geometry and high optoelectronic performance and operational stability was fabricated by the spin coating method. The trilayer was composed of an ultrathin graphene (Gr) film sandwiched between a transparent and colorless polyimide (TCPI) layer and a methanesulfonic acid (MSA)-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer containing dimethylsulfoxide and Zonyl fluorosurfactant (designated as MSA-PDZ film). The introduction of solution-processable TCPI enabled the direct formation of high-quality graphene on organic surfaces with a clean interface. Stable doping of graphene with the MSA-PDZ film enabled tuning of the inherent work function and optoelectronic properties of the PEDOT:PSS films, leading to a high figure of merit of ∼70 in the as-fabricated TEs. Particularly, from multivariate and repetitive harsh environmental tests ( T = -50 to 90 °C, over 90 RH%), the TCPI/Gr heterostructure exhibited excellent tolerance to mechanical and thermal stresses and gas barrier properties that protected the MSA-PDZ film from exposure to moisture. Owing to the synergetic effect from the TCPI/Gr/MSA-PDZ anode structure, the TCPI/Gr/MSA-PDZ-based polymer light-emitting diodes showed highly improved current and power efficiencies with maxima as high as 20.84 cd/A and 22.92 lm/W, respectively (comparable to those of indium tin oxide based PLEDs), in addition to much enhanced mechanical flexibility.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas-Fermi charge screening (λ_TF ) and interlayer resistance (R_int ). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS₂ ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λ_TF and R_int coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS₂ .

Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.

Thermal Release Transfer Printing for Stretchable Conformal Bioelectronics

Soft neural electrode arrays that are mechanically matched between neural tissues and electrodes offer valuable opportunities for the development of disease diagnose and brain computer interface systems. Here, a thermal release transfer printing method for fabrication of stretchable bioelectronics, such as soft neural electrode arrays, is presented. Due to the large, switchable and irreversible change in adhesion strength of thermal release tape, a low-cost, easy-to-operate, and temperature-controlled transfer printing process can be achieved. The mechanism of this method is analyzed by experiments and fracture-mechanics models. Using the thermal release transfer printing method, a stretchable neural electrode array is fabricated by a sacrificial-layer-free process. The ability of the as-fabricated electrode array to conform different curvilinear surfaces is confirmed by experimental and theoretical studies. High-quality electrocorticography signals of anesthetized rat are collected with the as-fabricated electrode array, which proves good conformal interface between the electrodes and dura mater. The application of the as-fabricated electrode array on detecting the steady-state visual evoked potentials research is also demonstrated by in vivo experiments and the results are compared with those detected by stainless-steel screw electrodes.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm². Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m⁻² that can already satisfy the requirements for lighting sources and displays.

Ultraclean and damage-free transfer of graphene over large areas is crucial for the future development of flexible electronics and optoelectronics. Using a rosin-assisted method, the authors transfer graphene with an ultraclean surface and uniform small sheet resistance—a 4-inch monolithic organic light-emitting diode is demonstrated.

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS₂ on SiO₂/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices.

Controllable Sliding Transfer of Wafer-Size Graphene

The innovative design of sliding transfer based on a liquid substrate can succinctly transfer high-quality, wafer-size, and contamination-free graphene within a few seconds. Moreover, it can be extended to transfer other 2D materials. The efficient sliding transfer approach can obtain high-quality and large-area graphene for fundamental research and industrial applications.

Progress and Challenges in Transfer of Large-Area Graphene Films

Graphene, the thinnest, strongest, and stiffest material with exceptional thermal conductivity and electron mobility, has increasingly received world-wide attention in the past few years. These unique properties may lead to novel or improved technologies to address the pressing global challenges in many applications including transparent conducting electrodes, field effect transistors, flexible touch screen, single-molecule gas detection, desalination, DNA sequencing, osmotic energy production, etc. To realize these applications, it is necessary to transfer graphene films from growth substrate to target substrate with large-area, clean, and low defect surface, which are crucial to the performances of large-area graphene devices. This critical review assesses the recent development in transferring large-area graphene grown on Fe, Ru, Co, Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized methods. Among them, the transfers of the most attention kinds of graphene synthesized on Cu and SiC substrates are discussed emphatically. The advances and the main challenges of each wet and dry transfer method for obtaining the transferred graphene film with large-area, clean, and low defect surface are also reviewed. Finally, the article concludes the most promising methods and the further prospects of graphene transfer.

A Rational Strategy for Graphene Transfer on Substrates with Rough Features

Graphene grown by chemical vapor deposition is transferred by a very simple, yet effective approach from the growth substrate onto substrates with rough features. This novel and facile method not only results in satisfactory transfer on substrates with terraces or grooves, but also gives rise to a successful result for uneven growth substrates.

Transfer of Chemically Modified Graphene with Retention of Functionality for Surface Engineering

Single-layer graphene chemically reduced by the Birch process delaminates from a Si/SiOx substrate when exposed to an ethanol/water mixture, enabling transfer of chemically functionalized graphene to arbitrary substrates such as metals, dielectrics, and polymers. Unlike in previous reports, the graphene retains hydrogen, methyl, and aryl functional groups during the transfer process. This enables one to functionalize the receiving substrate with the properties of the chemically modified graphene (CMG). For instance, magnetic force microscopy shows that the previously reported magnetic properties of partially hydrogenated graphene remain after transfer. We also transfer hydrogenated graphene from its copper growth substrate to a Si/SiOx wafer and thermally dehydrogenate it to demonstrate a polymer- and etchant-free graphene transfer for potential use in transmission electron microscopy. Finally, we show that the Birch reduction facilitates delamination of CMG by weakening van der Waals forces between graphene and its substrate.

High Fidelity Tape Transfer Printing Based On Chemically Induced Adhesive Strength Modulation

Transfer printing, a two-step process (i.e. picking up and printing) for heterogeneous integration, has been widely exploited for the fabrication of functional electronics system. To ensure a reliable process, strong adhesion for picking up and weak or no adhesion for printing are required. However, it is challenging to meet the requirements of switchable stamp adhesion. Here we introduce a simple, high fidelity process, namely tape transfer printing (TTP), enabled by chemically induced dramatic modulation in tape adhesive strength. We describe the working mechanism of the adhesion modulation that governs this process and demonstrate the method by high fidelity tape transfer printing several types of materials and devices, including Si pellets arrays, photodetector arrays, and electromyography (EMG) sensors, from their preparation substrates to various alien substrates. High fidelity tape transfer printing of components onto curvilinear surfaces is also illustrated.

Transfer printing of CVD graphene FETs on patterned substrates

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA-cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω μm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

Nanomaterial-enabled stretchable conductors: strategies, materials and devices

Stretchable electronics are attracting intensive attention due to their promising applications in many areas where electronic devices undergo large deformation and/or form intimate contact with curvilinear surfaces. On the other hand, a plethora of nanomaterials with outstanding properties have emerged over the past decades. The understanding of nanoscale phenomena, materials, and devices has progressed to a point where substantial strides in nanomaterial-enabled applications become realistic. This review summarizes recent advances in one such application, nanomaterial-enabled stretchable conductors (one of the most important components for stretchable electronics) and related stretchable devices (e.g., capacitive sensors, supercapacitors and electroactive polymer actuators), over the past five years. Focusing on bottom-up synthesized carbon nanomaterials (e.g., carbon nanotubes and graphene) and metal nanomaterials (e.g., metal nanowires and nanoparticles), this review provides fundamental insights into the strategies for developing nanomaterial-enabled highly conductive and stretchable conductors. Finally, some of the challenges and important directions in the area of nanomaterial-enabled stretchable conductors and devices are discussed.

Annealing free, clean graphene transfer using alternative polymer scaffolds

We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy. Comparatively, films transferred with PLA, PPA, PMMA/PC, and PMMA have a two-fold higher roughness and a five-fold higher chemical doping. Using PC scaffolds, we demonstrate the clean transfer of CVD multilayer graphene, fluorinated graphene, and hexagonal boron nitride. Our annealing free, PC transfers enable the use of atomically-clean nanomaterials in biomolecule encapsulation and flexible electronic applications.

Dry transfer of chemical-vapor-deposition-grown graphene onto liquid-sensitive surfaces for tunnel junction applications

We report a dry transfer method that can tranfer chemical vapor deposition (CVD) grown graphene onto liquid-sensitive surfaces. The graphene grown on copper (Cu) foil substrate was first transferred onto a freestanding 4 μm thick sputtered Cu film using the conventional wet transfer process, followed by a dry transfer process onto the target surface using a polydimethylsiloxane stamp. The dry-transferred graphene has similar properties to traditional wet-transferred graphene, characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and electrical transport measurements. It has a sheet resistance of 1.6 ∼ 3.4 kΩ/□, hole density of (4.1 ∼ 5.3) × 10(12) cm(-2), and hole mobility of 460 ∼ 760 cm(2) V(-1) s(-1) without doping at room temperature. The results suggest that large-scale CVD-grown graphene can be transferred with good quality and without contaminating the target surface by any liquid. Mg/MgO/graphene tunnel junctions were fabricated using this transfer method. The junctions show good tunneling characteristics, which demonstrates the transfer technique can also be used to fabricate graphene devices on liquid-sensitive surfaces.

Designed three-dimensional freestanding single-crystal carbon architectures

Single-crystal carbon nanomaterials have led to great advances in nanotechnology. The first single-crystal carbon nanomaterial, fullerene, was fabricated in a zero-dimensional form. One-dimensional carbon nanotubes and two-dimensional graphene have since followed and continue to provide further impetus to this field. In this study, we fabricated designed three-dimensional (3D) single-crystal carbon architectures by using silicon carbide templates. For this method, a designed 3D SiC structure was transformed into a 3D freestanding single-crystal carbon structure that retained the original SiC structure by performing a simple single-step thermal process. The SiC structure inside the 3D carbon structure is self-etched, which results in a 3D freestanding carbon structure. The 3D carbon structure is a single crystal with the same hexagonal close-packed structure as graphene. The size of the carbon structures can be controlled from the nanoscale to the microscale, and arrays of these structures can be scaled up to the wafer scale. The 3D freestanding carbon structures were found to be mechanically stable even after repeated loading. The relationship between the reversible mechanical deformation of a carbon structure and its electrical conductance was also investigated. Our method of fabricating designed 3D freestanding single-crystal graphene architectures opens up prospects in the field of single-crystal carbon nanomaterials and paves the way for the development of 3D single-crystal carbon devices.

Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure

Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of a graphene device. A graphene on an h-BN substrate may buckle due to the thermal expansion mismatch between the graphene and h-BN. We used an energy method to investigate the periodic buckling patterns including one-dimensional, square checkerboard, hexagonal, equilateral triangular and herringbone mode in a graphene/h-BN heterostructure under equi-biaxial compression. The total energy, consisting of cohesive energy, graphene membrane energy and graphene bending energy, for each buckling pattern is obtained analytically. At a compression slightly larger than the critical strain, all buckling patterns have the same total energies, which suggests that any buckling pattern may occur. At a compression much larger than the critical strain, the herringbone mode has the lowest total energy by significantly reducing the membrane energy of graphene at the expense of a slight increase of the bending energy of graphene and cohesive energy. These results may serve as guidelines for strain engineering in graphene/h-BN heterostructures.

Photosensitive graphene transistors

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Bias free gap creation in bilayer graphene

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1 eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300 meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron-phonon interaction formed when bilayer graphene is sandwiched between highly polarisable ionic materials. We derive and solve self-consistent equations, finding that a large gap can be formed for intermediate electron-phonon coupling. The gap originates from the amplification of an intrinsic Coulomb interaction due to the proximity of carbon atoms in neighbouring planes.

Reconfigurable topography for rapid solution processing of transparent conductors

Cost-effective materials for transparent conducting electrodes are essential for many devices used in clean energy production and consumer electronics. Here we report a technique for non-lithographic patterning of silver nanowires on flexible substrates from solution via microcontact transfer printing using donor substrates with reconfigurable topography. This approach is a highly scalable fabrication strategy for high performance transparent conductors.