Programmable computing with a single magnetoresistive element

Photoresponsive Two-Dimensional Magnetic Junctions for Reconfigurable In-Memory Sensing

Magnetic tunneling junctions (MTJs) lie in the core of magnetic random access memory, holding promise in integrating memory and computing to reduce hardware complexity, transition latency, and power consumption. However, traditional MTJs are insensitive to light, limiting their functionality in in-memory sensing─a crucial component for machine vision systems in artificial intelligence applications. Herein, the convergence of magnetic memory with optical sensing capabilities is achieved in the all-two-dimensional (2D) magnetic junction Fe3GaTe2/WSe2/Fe3GaTe2, which combines 2D magnetism and optoelectronic properties. The clean intrinsic band gap and prominent photoresponse of interlayer WSe2 endow the tunneling barrier with optical tunability. The on-off states of junctions and the magnetoresistance can be flexibly controlled by the intensity of the optical signal at room temperature. Based on the optical-tunable magnetoresistance in all-2D magnetic junctions, a machine vision system with the architecture of in-memory sensing and computing is constructed, which possesses high performance in image recognition. Our work exhibits the advantages of 2D magneto-electronic devices and extends the application scenarios of magnetic memory devices in artificial intelligence.

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Logic-in-memory (LIM) architecture holds great potential to break the von Neumann bottleneck. Despite the extensive research on novel devices, challenges persist in developing suitable engineering building blocks for such designs. Herein, we propose a reconfigurable strategy for efficient implementation of Boolean logics based on a hafnium oxide-based ferroelectric field effect transistor (HfO2-based FeFET). The logic results are stored within the device itself (in situ) during the computation process, featuring the key characteristics of LIM. The fast switching speed and low power consumption of a HfO2-based FeFET enable the execution of Boolean logics with an ultralow energy of lower than 8 attojoule (aJ). This represents a significant milestone in achieving aJ-level computing energy consumption. Furthermore, the system demonstrates exceptional reliability with computing endurance exceeding 108 cycles and retention properties exceeding 1000 s. These results highlight the remarkable potential of a FeFET for the realization of high performance beyond the von Neumann LIM computing architectures.

Chemical Flexibility of Atomically Precise Metal Clusters

Ligand-protected metal clusters possess hybrid properties that seamlessly combine an inorganic core with an organic ligand shell, imparting them exceptional chemical flexibility and unlocking remarkable application potential in diverse fields. Leveraging chemical flexibility to expand the library of available materials and stimulate the development of new functionalities is becoming an increasingly pressing requirement. This Review focuses on the origin of chemical flexibility from the structural analysis, including intra-cluster bonding, inter-cluster interactions, cluster-environments interactions, metal-to-ligand ratios, and thermodynamic effects. In the introduction, we briefly outline the development of metal clusters and explain the differences and commonalities of M(I)/M(I/0) coinage metal clusters. Additionally, we distinguish the bonding characteristics of metal atoms in the inorganic core, which give rise to their distinct chemical flexibility. Section 2 delves into the structural analysis, bonding categories, and thermodynamic theories related to metal clusters. In the following sections 3 to 7, we primarily elucidate the mechanisms that trigger chemical flexibility, the dynamic processes in transformation, the resultant alterations in structure, and the ensuing modifications in physical-chemical properties. Section 8 presents the notable applications that have emerged from utilizing metal clusters and their assemblies. Finally, in section 9, we discuss future challenges and opportunities within this area.

Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators

Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to software-based simulations owing to their poor reliability. Herein, we propose a self-rectifying memristor-based 1 kb CA as a hardware accelerator for NN computations. We conducted fully hardware-based single-layer NN classification tasks involving the Modified National Institute of Standards and Technology database using the developed passive CA, and achieved 100% classification accuracy for 1500 test sets. We also investigated the influences of the defect-tolerance capability of the CA, impact of the conductance range of the integrated memristors, and presence or absence of selection functionality in the integrated memristors on the image classification tasks. We offer valuable insights into the behavior and performance of CA devices under various conditions and provide evidence of the practicality of memristor-integrated passive CAs as hardware accelerators for NN applications.

Silver Nanoparticle Synthesis in Glycerol by Low-Pressure Plasma-Driven Electrolysis: The Roles of Free Electrons and Photons

Low-temperature plasmas in and in contact with liquids have emerged as a catalyst-free approach for the selective, electrode-free, and green synthesis of novel materials. For the synthesis of nanomaterials, short-lived solvated electrons have been proposed to be the critical reducing species, while the role of ultraviolet (UV) photons from plasma is less explored. Here, we demonstrate that UV radiation contributes ∼70% of the integral plasma effect in synthesizing silver (Ag) nanoparticles within a glycerol solution. We suggest that the UV radiation causes C-H bond cleavage of the glycerol molecules, with an experimentally and theoretically determined threshold photon energy of only 5 eV. The photon-induced dissociation leads to the formation of glycerol fragmentation radicals, causing the reduction of Ag+ ions to Ag neutrals, enabling nanoparticle formation in the liquid phase.

B-site order/disorder in A2BB'O6and its correlation with their magnetic property

The disorder in any system affects their physical behavior. In this scenario, we report the possibility of disorder in A₂BB'O₆oxides and their effect on different magnetic properties. These systems show anti-site disorder by interchanging B and B' elements from their ordered position and giving rise to an anti-phase boundary. The presence of disorder leads to a reduction in saturationMand magnetic transition temperature. The disorder prevents the system from sharp magnetic transition which originates short-range clustered phase (or Griffiths phase) in the paramagnetic region just above the long-range magnetic transition temperature. Further, we report that the presence of anti-site disorder and anti-phase boundary in A₂BB'O₆oxides give different interesting magnetic phases like metamagnetic transition, spin-glass, exchange bias, magnetocaloric effect, magnetodielectric, magnetoresistance, spin-phonon coupling, etc.

Cascadable in-memory computing based on symmetric writing and readout

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a previously unimplemented symmetric write and readout mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved using unconventional charge-to-z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin-to-charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.

Optimizing Plasmonic Gold Nanorod Deposition on Glass Surfaces for High-Sensitivity Refractometric Biosensing

Owing to high surface sensitivity, gold nanorods (AuNRs) are widely used to construct surface-based nanoplasmonic biosensing platforms for label-free molecular diagnostic applications. A key fabrication step involves controlling AuNR deposition onto the target surface, which requires maximizing surface density while minimizing inter-particle aggregation, and is often achieved by surface functionalization with a self-assembled monolayer (SAM) prior to AuNR deposition. To date, existing studies have typically used a fixed concentration of SAM-forming organic molecules (0.2-10% v/v) while understanding how SAM density affects AuNR deposition and resulting sensing performance would be advantageous. Herein, we systematically investigated how controlling the (3-aminopropyl)triethoxysilane (APTES) concentration (1-30% v/v) during SAM preparation affects the fabrication of AuNR-coated glass surfaces for nanoplasmonic biosensing applications. Using scanning electron microscopy (SEM) and UV-visible spectroscopy, we identified an intermediate APTES concentration range that yielded the highest density of individually deposited AuNRs with minimal aggregation and also the highest peak wavelength in aqueous solution. Bulk refractive index sensitivity measurements indicated that the AuNR configuration had a strong effect on the sensing performance, and the corresponding wavelength-shift responses ranged from 125 to 290 nm per refractive index unit (RIU) depending on the APTES concentration used. Biosensing experiments involving protein detection and antigen-antibody interactions further demonstrated the high surface sensitivity of the optimized AuNR platform, especially in the low protein concentration range where the measurement shift was ~8-fold higher than that obtained with previously used sensing platforms.

Molecular Compounds in Spintronic Devices: An Intricate Marriage of Chemistry and Physics

Spintronics, a flourishing new field of microelectronics, uses the electron spin for reading and writing information in modern computers and other spintronic devices with a low power consumption and high reliability. In a quest to increase the productivity of such devices, the use of molecular materials as a spacer layer allowed them to perform equally well or even better than conventional all-inorganic heterostructures from metals, alloys, or inorganic semiconductors. In this review, we survey various classes of chemical compounds that have already been tested for this purpose─from organic compounds and coordination complexes to organic-inorganic hybrid materials─since the creation of the first molecule-based spintronic device in 2002. Although each class has its advantages, drawbacks, and applications in molecular spintronics, together they allowed nonchemists to gain insights into spin-related effects and to propose new concepts in the design and fabrication of highly efficient spintronic devices. Other molecular compounds that chemistry could offer in great numbers may soon emerge as suitable spacers or even electrodes in flexible magnetic field sensors, nonvolatile memories, and multifunctional spintronic devices.

Evidence of Delta Phase of Fe in MBE-Grown Thin Epitaxial Films on GaAs

Fe/GaAs is an important system for the study of spin injection behavior that can vary with the nature and interfaces of Fe films. Here, we investigate the effect of interfacial strain on the microstructure, interfaces and phase-formation behavior in epitaxially grown Fe films. To vary the strain, we have characterized Fe films of various thicknesses ranging from 10 to 1000 nm which were grown using molecular beam epitaxy on GaAs (011) and AlGaAs (001) substrates. High resolution X-ray diffraction studies revealed that films with higher thicknesses exhibited an equilibrium α-Fe phase, while the films with less than 10 nm thicknesses indicated the presence of d-Fe. Transmission electron microscopy revealed the interface for 10-nm-thick films had strain lobes with no interfacial phase formation for films deposited at room temperature. At a higher deposition temperature of 175 °C, similar strain lobes were observed for a 10-nm-thick film. Extended annealing at 200 °C transformed the metastable d-Fe phase to an equilibrium α-Fe. However, at higher temperature, the interface contained an intermixing layer of (FeAl)GaAs. We demonstrate that the interfacial strain plays a major role in stabilizing the metastable d-Fe on GaAs.

Programmable Spin-Orbit Torque Multistate Memory and Spin Logic Cell

Controllable spin-orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for applications in both multistate memory and programmable spin logic. The studied heterojunction can be programmed into four different magnetic configurations at will by tuning both the in-plane exchange bias at the interface of IrMn and Co layers and the out-of-plane exchange bias at the interface of CoPt and CoO layers. Moreover, on the basis of the controllable exchange bias effect, 10 states of nonvolatile memory and multiple logic-in-memory functions have been demonstrated. Our findings indicate that IrMn/Co/Ru/CoPt/CoO multilayered structures can be used as a building block for next-generation logic-in-memory and multifunctional multidimensional spintronic devices.

Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.

Iron(II) Clathrochelates in Molecular Spintronic Devices: A Vertical Spin Valve

Abstract

The thermal sublimation of the known cage iron(II) complex (clathrochelate) gives thin films of this compound on various supports without violating its integrity as shown by electron spectroscopy. The spin state of the complex remains unchanged compared to the polycrystalline sample and solution. The first prototypes of molecular spintronic devices in the form of a vertical spin valve are prepared from the chosen iron(II) clathrochelate, and their electron transport properties are studied.

Heterometallic CeIV/ VV Oxo Clusters with Adjustable Catalytic Reactivities

Heterometallic Ce^IV/M oxo clusters are underexplored yet and can benefit from synergistic properties from combining cerium and other metal cations to produce efficient redox catalysts. Herein, we designed and synthesized a series of new Ce₁₂V₆ oxo clusters with different capping ligands: Ce₁₂V₆-SO₄, Ce₁₂V₆-OTs (OTs: toluenesulfonic acid), and Ce₁₂V₆-NBSA (NBSA: nitrobenzenesulfonic acid). Single crystal X-ray diffraction (SCXRD) for all three structures reveals a Ce₁₂V₆ cubane core formulated [Ce₁₂(VO)₆O₂₄]¹⁸⁺ with cerium on the edges of the cube, vanadyl capping the faces, and sulfate on the corners. While infrared spectroscopy (IR), ultraviolet-visible spectroscopy (UV-vis), electrospray ionization mass spectrometry (ESI-MS), and proton nuclear magnetic resonance (¹H NMR) proved the successful coordination of the organic ligands to the Ce₁₂V₆ core, liquid phase ⁵¹V NMR and small-angle X-ray scattering (SAXS) confirmed the integrity of the clusters in the organic solutions. Furthermore, functionalization of the Ce₁₂V₆ core with organic ligands both provides increased solubility in term of homogeneous application and introduces porosity to the assemblies of Ce₁₂V₆-OTs and Ce₁₂V₆-NBSA in term of heterogeneous application, thus allowing more catalytic sites to be accessible and improving reactivity as compared to the nonporous and less soluble Ce₁₂V₆-SO₄. Meanwhile, the coordinated ligands also influenced the electronic environment of the catalytic sites, in turn affecting the reactivity of the cluster, which we probed by the selective oxidation of 2-chloroethyl ethyl sulfide (CEES). This work provides a strategy to make full use of the catalytic sites within a class of inorganic sulfate capped clusters via organic ligand introduction.

Applications of nanomagnets as dynamical systems: II

In Part I of this topical review, we discussed dynamical phenomena in nanomagnets, focusing primarily on magnetization reversal with an eye to digital applications. In this part, we address mostly wave-like phenomena in nanomagnets, with emphasis on spin waves in myriad nanomagnetic systems and methods of controlling magnetization dynamics in nanomagnet arrays which may have analog applications. We conclude with a discussion of some interesting spintronic phenomena that undergird the rich physics exhibited by nanomagnet assemblies.

Applications of nanomagnets as dynamical systems: I

When magnets are fashioned into nanoscale elements, they exhibit a wide variety of phenomena replete with rich physics and the lure of tantalizing applications. In this topical review, we discuss some of these phenomena, especially those that have come to light recently, and highlight their potential applications. We emphasize what drives a phenomenon, what undergirds the dynamics of the system that exhibits the phenomenon, how the dynamics can be manipulated, and what specific features can be harnessed for technological advances. For the sake of balance, we point out both advantages and shortcomings of nanomagnet based devices and systems predicated on the phenomena we discuss. Where possible, we chart out paths for future investigations that can shed new light on an intriguing phenomenon and/or facilitate both traditional and non-traditional applications.

Localized surface plasmon resonance induced assembly of bimetal nanochains

Bimetal nanochains (NCs) are attracting increasing attention in the fields of catalysis and electrocatalysis due to the synergistic effects in electronic and optical properties, but the fabrication of bimetal NCs remains challenging. Here, we report a general strategy named "nucleation in the irradiation then growth in the dark" for the preparation of Au/M (second metal) NCs. In the irradiation stage, the localized surface plasmon resonance (LSPR) effect of Au NPs is excited to overcome the nucleation energy barrier for the deposition of second metals (Pt, Ag and Pd). In the followed dark process, the preferential growth of second metals on the existed nucleus leads to the formation of nanochain rather than the core/shell nanostructure. In the model reaction of electrocatalytic hydrogen evolution, the optimized Au/Pt NCs showed much better performance compared with the commercial Pt/C.

Single-Domain Multiferroic Array-Addressable Terfenol-D (SMArT) Micromagnets for Programmable Single-Cell Capture and Release

Programming magnetic fields with microscale control can enable automation at the scale of single cells ≈10 µm. Most magnetic materials provide a consistent magnetic field over time but the direction or field strength at the microscale is not easily modulated. However, magnetostrictive materials, when coupled with ferroelectric material (i.e., strain-mediated multiferroics), can undergo magnetization reorientation due to voltage-induced strain, promising refined control of magnetization at the micrometer-scale. This work demonstrates the largest single-domain microstructures (20 µm) of Terfenol-D (Tb0.3 Dy0.7 Fe1.92 ), a material that has the highest magnetostrictive strain of any known soft magnetoelastic material. These Terfenol-D microstructures enable controlled localization of magnetic beads with sub-micrometer precision. Magnetically labeled cells are captured by the field gradients generated from the single-domain microstructures without an external magnetic field. The magnetic state on these microstructures is switched through voltage-induced strain, as a result of the strain-mediated converse magnetoelectric effect, to release individual cells using a multiferroic approach. These electronically addressable micromagnets pave the way for parallelized multiferroics-based single-cell sorting under digital control for biotechnology applications.

Synaptic transistors and neuromorphic systems based on carbon nano-materials

Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.

Use of Triangular Silver Nanoplates as Low Potential Redox Mediators for Electrochemical Sensing

Redox mediators can facilitate the electrochemical communication between targets and electrodes for material characterization and investigation. To provide an alternative to the chemical-based redox mediators, herein, we present a nanoparticle-based redox mediator, i.e., the trisodium citrates (TSC)-capped triangular silver nanoplates (Tri-Ag-NP_TSC), which demonstrates an efficient oxidative process at around 0.13 V (vs Ag/AgCl) with acceptable redox reversibility by exploiting the interaction between the carbonyl group of TSC and the Ag element of Tri-Ag-NP_TSC. The TSC of Tri-Ag-NPs can be selectively replaced by thiols and enable the obtained Tri-Ag-NP_TSC-thiol with changed electrochemical redox response, which could be utilized to determine various thiols at 0.13 V, a much lowered oxidative potential than traditional redox mediators, with a similar linear response range, response slope, and limit of detection (LOD). This work proposes a surface-engineering approach to design and develop electrochemical redox probes using Ag nanoparticles with particular morphology, indicating that the interaction between the carbonyl group and Ag nanoparticles might be extended to sensing application beyond the surface-enhanced Raman scattering.

Gold Nanoparticle as a Lewis Catalyst for Water Elimination of Tyrosine-•OH Adducts: A Radiation and Quantum Chemical Study

The role of gold nanoparticles (AuNPs) in the degradation of tyrosine intermediates formed during the radiation-induced ^•OH reaction with tyrosine at pH 6.5 is investigated by measuring the radiolytic yields, G, of tyrosine (-Tyr), dityrosine (DT), and 3,4 dihydroxyphenylalanine (DOPA). The G(DT) is doubled, whereas G(-Tyr) calculated is halved in the presence of 6.0 × 10^-10 mol dm^-3 AuNPs. Pulse radiolysis studies are carried out to elucidate the mechanism and nature of the transient formed in the reaction of ^•OH and ^•N₃ with tyrosine. The formation of tyrosyl radical in the presence of AuNPs is found to be a major pathway through the decay of tyrosine-^•OH adducts via the water elimination reaction, which is found to be 3× faster in the presence of AuNPs. Quantum chemical calculations on the system showed favorable formation of the tyrosine-AuNP complex. A new plausible mechanism of tyrosine-AuNP complex acting as a Lewis type catalyst in the decay of tyrosine-^•OH adducts leading to reduced DOPA formation is proposed. The proposed mechanism is also complemented by the electronic spectra and energetics of the reaction of ^•OH with tyrosine using density functional theory calculations. Significantly, the H-shift reaction of ortho-tyrosine-^•OH adducts is also found to be energetically viable. The investigation provides a new physical insight into the effect of AuNPs on the decay of free-radical transient species and demonstrates the potential of radiation chemical techniques and quantum chemical calculations as a tool for understanding the impact of metal nanoparticles in free-radical oxidation of amino acids, which is important in the use of metal nanoparticles for biomedical applications.

LSPR optical fiber biosensor based on a 3D composite structure of gold nanoparticles and multilayer graphene films

In this paper, a localized surface-plasmon resonance (LSPR) biosensor, which uses a U-shaped multi-mode fiber (U-MMF), is introduced and investigated. It is modified with a complex of three-dimensional (3D) gold nanoparticles and multilayer graphene as spacer: n*(Au/G)@U-MMF, where n denotes the layer number of gold nanoparticles. The gold nanoparticles were synthesized by reducing chloroauric acid. Graphene films were formed using a liquid/chemical method. The number of gold-nanoparticle layers was found to be critical for the performance of the sensor. Moreover, using the finite-difference time domain, 3D nanostructures, with a wide range of gold-nanoparticle layers, were explored. The sensor showed the sensitivity of 1251.44 nm/RIU, as well as high stability and repeatability; for the measurement-process of time- and concentration-dependent DNA hybridization kinetics with detection concentrations, ranging from 0.1nM to 100 nM, the sensor displayed excellent performance, which points towards a vast potential in the field of medical diagnostics.

Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio - resistive random access memory device

Bio - molecules detection and their quantification with a high precision is essential in modern era of medical diagnostics. In this context, the memristor device which can change its resistance state is a promising technique to sense the bio - molecules. In this work, detection of the Bovine Serum Albumin (BSA) protein using resistive switching memristors based on TiO2 and TiO2 + graphene oxide (GO) is explored. The sensitivity of BSA detection is found to be 4 mg/mL. Both the devices show an excellent bipolar resistive switching with an on/off ratio of 73 and 100 respectively, which essentially demonstrates that the device with GO, distinguishes the resistance states with a high precision. The enhanced performance in the GO inserted device (~ 650 cycles) is attributed to the prevention of multi-dimensional and random growth of conductive paths.

In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions

Perpendicular magnetic tunnel junctions (p-MTJs) provide advantages such as infinite endurance, high thermal stability, and fast and low-power switching. They are considered as a promising non-volatile memory device to build non-von Neumann computing paradigms and definitively overcome the power bottleneck. Numerous design proposals have been made for p-MTJ logic, but a few physical realizations have been reported. In this paper, we present the experimental implementation of universal stateful logic gates such as "OR", "AND", and material implication ("IMP") by connecting two nanoscale p-MTJs in parallel. Owing to the voltage dependence of switching probability for the spin transfer torque mechanism, the same structure can be reconfigured to different logic gates with only electrical signals. One single-cycle operation is thus required for all the basic Boolean functions. Such in-memory direct processing has great potential to meet some key requirements such as a high energy/areal efficiency and high speed for future computing hardware.

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.

Robustness of Voltage-induced Magnetocapacitance

One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co₄₀Fe₄₀B₂₀/MgO/Co₄₀Fe₄₀B₂₀. We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Fröhlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.

Field-Free Programmable Spin Logics via Chirality-Reversible Spin-Orbit Torque Switching

Spin-orbit torque (SOT)-induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin-logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in-plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange-coupled with the in-plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin-logic devices.

Magnon Valve Effect between Two Magnetic Insulators

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Light-Gated Memristor with Integrated Logic and Memory Functions

Memristive devices are able to store and process information, which offers several key advantages over the transistor-based architectures. However, most of the two-terminal memristive devices have fixed functions once made and cannot be reconfigured for other situations. Here, we propose and demonstrate a memristive device "memlogic" (memory logic) as a nonvolatile switch of logic operations integrated with memory function in a single light-gated memristor. Based on nonvolatile light-modulated memristive switching behavior, a single memlogic cell is able to achieve optical and electrical mixed basic Boolean logic of reconfigurable "AND", "OR", and "NOT" operations. Furthermore, the single memlogic cell is also capable of functioning as an optical adder and digital-to-analog converter. All the memlogic outputs are memristive for in situ data storage due to the nonvolatile resistive switching and persistent photoconductivity effects. Thus, as a memdevice, the memlogic has potential for not only simplifying the programmable logic circuits but also building memristive multifunctional optoelectronics.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is ‘electrically’ reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the ‘stateful’ spin-based logic scalable to ultralow energy dissipation.

Static and dynamic magnetic properties of sputtered Fe-Ga thin films

We present measurements of the static and dynamic properties of polycrystalline iron-gallium films, ranging from 20 nm to 80 nm and sputtered from an Fe_0.8Ga_0.2 target. Using a broadband ferromagnetic resonance setup in a wide frequency range, perpendicular standing spin-wave resonances were observed with the external static magnetic field applied in-plane. The field corresponding to the strongest resonance peak at each frequency is used to determine the effective magnetization, the g-factor and the Gilbert damping. Furthermore, the dependence of spin-wave mode on field-position is observed for several frequencies. The analysis of broadband dynamic properties allows determination of the exchange stiffness A = (18 ± 4) pJ/m and Gilbert damping α = 0.042 ± 0.005 for 40 nm and 80 nm thick films. These values are approximately consistent with values seen in epitaxially grown films, indicating the potential for industrial fabrication of magnetostrictive FeGa films for microwave applications.

Cascaded spintronic logic with low-dimensional carbon

Remarkable breakthroughs have established the functionality of graphene and carbon nanotube transistors as replacements to silicon in conventional computing structures, and numerous spintronic logic gates have been presented. However, an efficient cascaded logic structure that exploits electron spin has not yet been demonstrated. In this work, we introduce and analyse a cascaded spintronic computing system composed solely of low-dimensional carbon materials. We propose a spintronic switch based on the recent discovery of negative magnetoresistance in graphene nanoribbons, and demonstrate its feasibility through tight-binding calculations of the band structure. Covalently connected carbon nanotubes create magnetic fields through graphene nanoribbons, cascading logic gates through incoherent spintronic switching. The exceptional material properties of carbon materials permit Terahertz operation and two orders of magnitude decrease in power-delay product compared to cutting-edge microprocessors. We hope to inspire the fabrication of these cascaded logic circuits to stimulate a transformative generation of energy-efficient computing.

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10³ %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits

Resistance switching (RS) devices have potential to offer computing and memory function. A new computer unit is built of RS array, where processing and storing of information occur on same devices. Resistance states stored in devices located in arbitrary positions of RS array can be performed various nonvolatile logic operations. Logic functions can be reconfigured by altering trigger signals.

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future.

Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure

An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated.

Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices.

Topological computation based on direct magnetic logic communication

Non-uniform magnetic domains with non-trivial topology, such as vortices and skyrmions, are proposed as superior state variables for nonvolatile information storage. So far, the possibility of logic operations using topological objects has not been considered. Here, we demonstrate numerically that the topology of the system plays a significant role for its dynamics, using the example of vortex-antivortex pairs in a planar ferromagnetic film. Utilising the dynamical properties and geometrical confinement, direct logic communication between the topological memory carriers is realised. This way, no additional magnetic-to-electrical conversion is required. More importantly, the information carriers can spontaneously travel up to ~300 nm, for which no spin-polarised current is required. The derived logic scheme enables topological spintronics, which can be integrated into large-scale memory and logic networks capable of complex computations.

Magnetic phase diagram of graphene nanorings in an electric field

Magnetic properties of graphene nanorings are investigated in the presence of an electric field. Within the formalism of Hubbard model, the graphene nanorings of various geometric configurations are found to exhibit rich phase diagram. For a nanoring system which has degenerate states at the Fermi level, the system is shown to undergo an abrupt phase transition from the antiferromagnetic to a nonmagnetic state in an electric field applied cross its zigzag edges. However, the nanoring is found to always stay in the antiferromagnetic state when the electric field is applied cross its armchair edges. For the other nanoring system with a finite single-particle gap, the magnetic moments of its antiferromagnetic ground state is seen to decrease gradually to zero with the electric field applied cross the zigzag edges. When the electric field is applied cross the armchair edges, the nanoring is shown to undergo several magnetic phase transitions before settling itself in a nonmagnetic ordering.

Growth, structure and morphology of epitaxial Fe(0 0 1) films on GaAs(0 0 1)c(4 × 4)

We studied epitaxy, growth, structure and morphology of thin Fe(0 0 1) films on the As-rich GaAs(0 0 1)-c(4 × 4) surface, deposited by molecular beam epitaxy at growth temperatures between room temperature and 250° C. Electron and x-ray diffraction (XRD) techniques evidence epitaxial growth with Fe(0 0 1)[1 0 0] ∥ GaAs(0 0 1)[1 0 0]. The residual strain derived from the XRD results is consistent with recent stress measurements. Cross-sectional transmission electron microscopy reveals an abrupt interface for room-temperature films and the formation of a ∼10 nm thick crystalline Fe-Ga-As intermediate layer at 250° C. The dependence of the surface morphology on growth temperature and annealing evidences a kinetic roughening of the Fe surface at growth temperatures of 100-200° C due to the presence of step-edge barriers.

An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many of these nanomagnetic devices do not possess the seven essential characteristics of a Boolean logic gate : concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error rates tend to vastly exceed that of conventional transistor-based logic gates, which is unacceptable. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is two orders of magnitude less than that of other nanomagnetic (non-volatile) logic gates. The error rate is also superior.

Programmable resistive-switch nanowire transistor logic circuits

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.

Ultrafast phase-change logic device driven by melting processes

The ultrahigh demand for faster computers is currently tackled by traditional methods such as size scaling (for increasing the number of devices), but this is rapidly becoming almost impossible, due to physical and lithographic limitations. To boost the speed of computers without increasing the number of logic devices, one of the most feasible solutions is to increase the number of operations performed by a device, which is largely impossible to achieve using current silicon-based logic devices. Multiple operations in phase-change-based logic devices have been achieved using crystallization; however, they can achieve mostly speeds of several hundreds of nanoseconds. A difficulty also arises from the trade-off between the speed of crystallization and long-term stability of the amorphous phase. We here instead control the process of melting through premelting disordering effects, while maintaining the superior advantage of phase-change-based logic devices over silicon-based logic devices. A melting speed of just 900 ps was achieved to perform multiple Boolean algebraic operations (e.g., NOR and NOT). Ab initio molecular-dynamics simulations and in situ electrical characterization revealed the origin (i.e., bond buckling of atoms) and kinetics (e.g., discontinuouslike behavior) of melting through premelting disordering, which were key to increasing the melting speeds. By a subtle investigation of the well-characterized phase-transition behavior, this simple method provides an elegant solution to boost significantly the speed of phase-change-based in-memory logic devices, thus paving the way for achieving computers that can perform computations approaching terahertz processing rates.

Three dimensional magnetic abacus memory

Stacking nonvolatile memory cells into a three-dimensional matrix represents a powerful solution for the future of magnetic memory. However, it is technologically challenging to access the data in the storage medium if large numbers of bits are stacked on top of each other. Here we introduce a new type of multilevel, nonvolatile magnetic memory concept, the magnetic abacus. Instead of storing information in individual magnetic layers, thereby having to read out each magnetic layer separately, the magnetic abacus adopts a new encoding scheme. It is inspired by the idea of second quantisation, dealing with the memory state of the entire stack simultaneously. Direct read operations are implemented by measuring the artificially engineered ‘quantised' Hall voltage, each representing a count of the spin-up and spin-down layers in the stack. This new memory system further allows for both flexible scaling of the system and fast communication among cells. The magnetic abacus provides a promising approach for future nonvolatile 3D magnetic random access memory.

A nanomechanical Fredkin gate

Irreversible logic operations inevitably discard information, setting fundamental limitations on the flexibility and the efficiency of modern computation. To circumvent the limit imposed by the von Neumann-Landauer (VNL) principle, an important objective is the development of reversible logic gates, as proposed by Fredkin, Toffoli, Wilczek, Feynman, and others. Here, we present a novel nanomechanical logic architecture for implementing a Fredkin gate, a universal logic gate from which any reversible computation can be built. In addition to verifying the truth table, we demonstrate operation of the device as an AND, OR, NOT, and FANOUT gate. Excluding losses due to resonator dissipation and transduction, which will require significant improvement in order to minimize the overall energy cost, our device requires an energy of order 10(4) kT per logic operation, similar in magnitude to state-of-the-art transistor-based technologies. Ultimately, reversible nanomechanical logic gates could play a crucial role in developing highly efficient reversible computers, with implications for efficient error correction and quantum computing.

Quantum transport modeling of the symmetric Fe/FeO0.5/MgO magnetic tunnel junction: the effects of correlations in the buffer layer

We report ab initio simulations of quantum transport properties of Fe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, where on-site Coulomb interaction is explicitly taken into account by local density approximation + Hubbard U approach. We show that on-site Coulomb repulsion in the iron-oxygen layer can cause a dramatic drop of the tunnel magnetoresistance of the system. We present an understanding of microscopic details of this phenomenon, connecting it to localization of electronic states of particular symmetry, which takes place in the buffer Fe-O layer, when on-site Coulomb repulsion is introduced. We further study the possible influence of the symmetry reduction in the buffer Fe-O layer on the transport properties of the Fe/MgO/Fe interface.