Two-dimensional gas of massless Dirac fermions in graphene

Controllable preparation of graphene glass fiber fabric towards mass production and its application in self-adaptive thermal management

Direct synthesis of graphene on nonmetallic substrates via chemical vapor deposition (CVD) has become a frontier research realm targeting transfer-free applications of CVD graphene. However, the stable mass production of graphene with a favorable growth rate and quality remains a grand challenge. Herein, graphene glass fiber fabric (GGFF) was successfully developed through the controllable growth of graphene on non-catalytic glass fiber fabric, employing a synergistic binary-precursor CVD strategy to alleviate the dilemma between growth rate and quality. The binary precursors consisted of acetylene and acetone, where acetylene with high decomposition efficiency fed rapid graphene growth while oxygen-containing acetone was adopted for improving the layer uniformity and quality. Notably, the bifurcating introducing-confluent premixing (BI-CP) system was self-built for the controllable introduction of gas and liquid precursors, enabling the stable production of GGFF. GGFF features solar absorption and infrared emission properties, based on which the self-adaptive dual-mode thermal management film was developed. This film can automatically switch between heating and cooling modes by spontaneously perceiving the temperature, achieving excellent thermal management performances with heating and cooling power of ∼501.2 and ∼108.6 W m-2, respectively. These findings unlock a new strategy for the large-scale batch production of graphene materials and inspire advanced possibilities for further applications.

Effects of size and shape of hole defects on mechanical properties of biphenylene: a molecular dynamics study

The distinctive multi-ring structure and remarkable electrical characteristics of biphenylene render it a material of considerable interest, notably for its prospective utilization as an anode material in lithium-ion batteries. However, understanding the mechanical traits of biphenylene is essential for its application, particularly due to the volumetric fluctuations resulting from lithium ion insertion and extraction during charging and discharging cycles. In this regard, this study investigates the performance of pristine biphenylene and materials embedded with various types of hole defects under uniaxial tension utilizing molecular dynamics simulations. Specifically, from the stress‒strain curves, we obtained key mechanical properties, including toughness, strength, Young's modulus and fracture strain. It was observed that various near-circular hole (including circular, square, hexagonal, and octagonal) defects result in remarkably similar properties. A more quantitative scaling analysis revealed that, in comparison with the exact shape of the defect, the area of the defect is more critical for determining the mechanical properties of biphenylene. Our finding might be beneficial to the defect engineering of two-dimensional materials.

High-Yield Exfoliation of Stanene Nanodots for High-Performance Organic Light-Emitting Diodes

Stanene nanodots (SnNDs) derived from layered tin have attracted considerable interest due to their conveniently tunable bandgap and topological superconductivity. However, high-yield exfoliation of ultrathin SnNDs is still a challenge due to the short layer spacing and strong binding energy. In this work, atomically thin SnNDs with a uniform size of 2.3 nm are successfully prepared by utilizing imidazolium ionic liquid-assisted exfoliation. The obtained SnNDs possess a wide bandgap of 2.69 eV, along with notable solvent compatibility (well dispersed in both polar and nonpolar solvents) and excellent stability. Furthermore, we construct Ir(ppy)3-based green OLED with hybridizing SnNDs and graphene oxide (GO) as the hole injection layer (HIL). It proves that the application of SnNDs helps to modulate the work function and passivate surface defects of GO, increasing hole mobility and thereby improving the device performance. Compared to the PEDOT:PSS-based control device, the optimized SnNDs-GO-based OLED demonstrates an improvement of 6.56, 41.06, and 8.16% in current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. This work not only introduces a new approach to preparing 2D SnNDs but also creates a novel HIL material for OLED devices.

Biaxial Strain Transfer in Monolayer MoS2 and WSe2 Transistor Structures

Monolayer transition metal dichalcogenides are intensely explored as active materials in 2D material-based devices due to their potential to overcome device size limitations, sub-nanometric thickness, and robust mechanical properties. Considering their large band gap sensitivity to mechanical strain, single-layered TMDs are well-suited for strain-engineered devices. While the impact of various types of mechanical strain on the properties of a variety of TMDs has been studied in the past, TMD-based devices have rarely been studied under mechanical deformations, with uniaxial strain being the most common one. Biaxial strain on the other hand, which is an important mode of deformation, remains scarcely studied as far as 2D material devices are concerned. Here, we study the strain transfer efficiency in MoS2- and WSe2-based flexible transistor structures under biaxial deformation. Utilizing Raman spectroscopy, we identify that strains as high as 0.55% can be efficiently and homogeneously transferred from the substrate to the material in the transistor channel. In particular, for the WSe2 transistors, we capture the strain dependence of the higher-order Raman modes and show that they are up to five times more sensitive compared to the first-order ones. Our work demonstrates Raman spectroscopy as a nondestructive probe for strain detection in 2D material-based flexible electronics and deepens our understanding of the strain transfer effects on 2D TMD devices.

Slip Opacity and Fast Osmotic Transport of Hydrophobes at Aqueous Interfaces with Two-Dimensional Materials

We investigate the interfacial transport of water and hydrophobic solutes on van der Waals bilayers and heterostructures formed by stacking graphene, hBN, and MoS2 using extensive ab initio molecular dynamics simulations. We compute water slippage and the diffusio-osmotic transport coefficient of hydrophobic particles at the interface by combining hydrodynamics and the theory of the hydrophobic effect. We find that slippage is dominated by the layer that is in direct contact with water and only marginally altered by the second layer, leading to a so-called "slip opacity". The screening of the lateral forces, where the liquid does not feel the forces coming from the second nearest layer, is one of the factors leading to the "slip opacity" in our systems. The diffusio-osmotic transport of small hydrophobes (with a radius below 2.5 Å) is also affected by the slip opacity, being dramatically enhanced by slippage. Furthermore, the direction of diffusio-osmotic flow is controlled by the solute size, with the flow in the opposite direction of the concentration gradient for smaller hydrophobes, and vice versa for larger ones. We connect our findings to the wetting properties of two-dimensional materials, and we propose that slippage and wetting can be controlled separately: whereas the slippage is mostly determined by the layer in closer proximity to water, wetting can be finely tuned by stacking different two-dimensional materials. Our study advances the computational design of two-dimensional materials and van der Waals heterostructures, enabling precise control over wetting and slippage properties for applications in coatings and water purification membranes.

Modulating the bandgap of Cr-intercalated bilayer graphene via combining the 18-electron rule and the 2D superatomic-molecule theory

Bandgap engineering of graphene is of great significance for its potential applications in electronic devices. Herein, we used a sandwich compound Cr(C6H6)2 as the building block to construct Cr-intercalated bilayer graphene (BLG), namely a C12Cr monolayer. Chemical bonding analysis reveals that strong d-π interaction ensures π electrons of the graphene layers and d orbitals of the Cr atoms localized in C6CrC6 units to achieve the favored 18-electron rule, thus leading to a bandgap of 0.24 eV. Subsequently, a C48Cr monolayer with lower proportion of Cr is further designed using Cr(C54H18)2 as building units, where a newly developed two-dimensional (2D) superatomic-molecule theory is introduced to rationalize its electronic structure. The C48Cr monolayer not only satisfies the 18-electron rule, but also localizes extra π electrons to form two layers of 2D superatomic crystals composed of 2D superatoms (◊O and ◊N), resulting in a wider bandgap of 0.74 eV. This work opens an effective avenue to modulate the bandgap of BLG via combining the 18-electron rule and the 2D superatomic-molecule theory.

2D materials for Tribo-corrosion and -oxidation protection: A review

The recent rise of 2D materials has extended the opportunities of tuning a variety of properties. Tribo-corrosion, the complex synergy between mechanical wear and chemical corrosion, poses significant challenges across numerous industries where materials are subjected to both tribological stressing and corrosive environments. This intricate interplay often leads to accelerated material degradation and failure. This review critically assesses the current state of utilizing 2D nanomaterials to enhance tribo-corrosion and -oxidation behavior. The paper summarizes the fundamental knowledge about tribo-corrosion and -oxidation mechanisms before assessing the key contributions of 2D materials, including graphene, transition metal chalcogenides, hexagonal boron nitride, MXenes, and black phosphorous, regarding the resulting friction and wear behavior. The protective roles of these nanomaterials against corrosion and oxidation are investigated, highlighting their potential in mitigating material degradation. Furthermore, we delve into the nuanced interplay between mechanical and corrosive factors in the specific application of 2D materials for tribo-corrosion and -oxidation protection. The synthesis of key findings underscores the advancements achieved through integrating 2D nanomaterials. An outlook for future research directions is provided, identifying unexplored avenues, and proposing strategies to propel the field forward. This analysis aims at guiding future investigations and developments at the dynamic intersection of 2D nanomaterials, tribo-corrosion, and -oxidation protection.

Two-dimensional bilayer blue phosphorus Dirac-like material: a multi-orbital tight-binding investigation

This study presents a theoretical examination of the electronic band structure of AA (AB) stacked bilayer blue phosphorus system within the fifth intralayer (5NN) and second interlayer nearest-neighbor (2NN) multi-orbital tight-binding (MOTB) approach. The variation of energy levels has been investigated through the symmetrical tensile strain of the low-buckled honeycomb lattice. Here, the primary objective is to examine the existence of Dirac electronic features in hexagonal stacked bilayer geometry. Our theoretical calculations predict that the AA bilayer is a new hexagonal two-dimensional material with px,y-orbital Dirac-like states at the high-symmetry K point. Consequently, these systems can host massless (massive) Dirac fermions. In particular, the AA bilayer exhibits zero-gap Dirac-like properties and manifests distinguishable Dirac-like cones in the presence of weak spin-orbit coupling when a modest stretch of 2.30% is achieved with a remarkably high Fermi velocity of approximately vf ≈ 0.12 × 105 m s-1. The behavior of the dispersion bands aligns reasonably well with recent experimental observations. Moreover, a stretch of 7.17% breaks some of the sublattice equivalence and enhances the spin-orbit interaction, resulting in the emergence of an electronic band gap of approximately ≈ 0.27 eV in the proximity of the high-symmetry K point. Furthermore, the tiny gap induced by the spin-orbit interaction implies topological nontriviality in the electronic state (quantum anomalous Hall state) of the honeycomb lattice. These findings categorize the AA bilayer as a rare two-dimensional Dirac-like material. This work provides, to the extent of our knowledge, a pioneering investigation into the existence of Dirac electronic properties in bilayer blue phosphorus. In addition, we present the first derivation of the MOTB model. However, the identified electronic characteristics designate this two-dimensional system as an ideal candidate for high-performance nanoelectronic devices.

Emergence of symmetric and asymmetric Dirac points under periodic electric and vector potentials in ABA-trilayer graphene superlattice

We have theoretically investigated the impact of both periodic electric and vector potentials on the low energy spectrum of ABA-trilayer graphene superlattice. Finite energy Dirac points appear in the energy spectrum due to the application of the vector potential. These extra Dirac points are symmetric about k y = 0 plane for equal barrier and well widths. For different barriers and well widths, one Dirac point shifts away and the second Dirac point shifts towards the k y = 0 plane. The extra Dirac points are not only generated from the original Dirac point but also emerge from the valleys developed in the energy spectrum. The application of both electric and vector potentials with identical barrier and well widths breaks the symmetry of the spectrum about the Fermi level. When the electric and vector potentials are asymmetric with all three layers having the same electric potentials, the energy spectrum becomes asymmetric about the Fermi level, and this asymmetric behavior of both potentials annihilates the original Dirac point from the spectrum. When all the layers have different electric potentials and both electric and vector potentials are asymmetric, the spectrum becomes asymmetric again, but this time the asymmetry of the spectrum occurs across the k y = 0 plane.

First-Principles Studies of the Electronic and Optical Properties of Two-Dimensional Arsenic-Phosphorus (2D As-P) Compounds

In this work, we propose the construction of a two-dimensional system based on the stable phases previously reported for the 2D arsenic and phosphorus compounds, with hexagonal and orthorhombic symmetries. Therefore, we have modeled one hexagonal and three possible orthorhombic structures. To ensure the dynamical stability, we performed phonon spectra calculations for each system. We found that all phases are dynamically stable. To ensure the thermodynamic and mechanical stabilities, we have calculated cohesive energies and elastic constants. Our results show that the criteria for the stabilities are all fulfilled. For these stable structures, we computed the electronic and optical properties from first-principles studies based on density functional theory. The computation of electronic band gaps was performed by using the GW approximation to overcome the underestimation of the results obtained from standard DFT approaches. To study the optical properties, we have computed the dielectric function imaginary part within the BSE approach, which takes into account the excitonic effects and allows us to calculate the exciton binding energies of each system. The study was complemented by the computation of the absorption coefficient. From our calculations, it can be established that the 2D As-P systems are good candidates for several technological applications.

Chemiresistive Gas Sensing using Graphene-Metal Oxide Hybrids

Chemiresistive sensing lies in its ability to provide fast, accurate, and reliable detection of various gases in a cost-effective and non-invasive manner. In this context, graphene-functionalized metal oxides play crucial role in hydrogen gas sensing. However, a cost-effective, defect-free, and large production schemes of graphene-based sensors are required for industrial applications. This review focuses on graphene-functionalized metal oxide nanostructures designed for gaseous molecules detection, mainly hydrogen gas sensing applications. For the convenience of the reader and to understand the role of graphene-metal oxide hybrids (GMOH) in gas sensing activities, a brief overview of the properties and synthesis routes of graphene and GMOH have been reported in this paper. Metal oxides play an essential role in the GMOH construct for hydrogen gas sensing. Therefore, various metal oxides-decorated GMOH constructs are detailed in this review as gas sensing platforms, particularly for hydrogen detection. Finally, specific directions for future research works and challenges ahead in designing highly selective and sensitive hydrogen gas sensors have been highlighted. As illustrated in this review, understanding of the metal oxides-decorated GMOH constructs is expected to guide ones in developing emerging hybrid nanomaterials that are suitable for hydrogen gas sensing applications.

Conveyor CVD to high-quality and productivity of large-area graphene and its potentiality

The mass production of high-quality graphene is required for industrial application as a future electronic material. However, the chemical vapor deposition (CVD) systems previously studied for graphene production face bottlenecks in terms of quality, speed, and reproducibility. Herein, we report a novel conveyor CVD system that enables rapid graphene synthesis using liquid precursors. Pristine and nitrogen-doped graphene samples of a size comparable to a smartphone (15 cm × 5 cm) are successfully synthesized at temperatures of 900, 950, and 1000 °C using butane and pyridine, respectively. Raman spectroscopy allows optimization of the rapid-synthesis conditions to achieve uniformity and high quality. By conducting compositional analysis via X-ray photoelectron spectroscopy as well as electrical characterization, it is confirmed that graphene synthesis and nitrogen doping degree can be adjusted by varying the synthesis conditions. Testing the corresponding graphene samples as gas-sensor channels for NH3 and NO2 and evaluating their response characteristics show that the gas sensors exhibit polar characteristics in terms of gas adsorption and desorption depending on the type of gas, with contrasting characteristics depending on the presence or absence of nitrogen doping; nitrogen-doped graphene exhibits superior gas-sensing sensitivity and response speed compared with pristine graphene.

Dispersion-Selective Band Engineering in an Artificial Kagome Superlattice

The relentless pursuit of band structure engineering continues to be a fundamental aspect in solid-state research. Here, we meticulously construct an artificial kagome potential to generate and control multiple Dirac bands of graphene. This unique high-order potential harbors natural multiperiodic components, enabling the reconstruction of band structures through different potential contributions. As a result, the band components, each characterized by distinct dispersions, shift in energy at different velocities in response to the variation of artificial potential. Thereby, we observe a significant spectral weight redistribution of the multiple Dirac peaks. Furthermore, the magnetic field can effectively weaken the superlattice effect and reactivate the intrinsic Dirac band. Overall, we achieve actively dispersion-selective band engineering, a functionality that would substantially increase the freedom in band design.

2D Atomic-Molecular Heterojunctions toward Brainoid Applications

Brainoid computing using 2D atomic crystals and their heterostructures, by emulating the human brain's remarkable efficiency and minimal energy consumption in information processing, poses a formidable solution to the energy-efficiency and processing speed constraints inherent in the von Neumann architecture. However, conventional 2D material based heterostructures employed in brainoid devices are beset with limitations, performance uniformity, fabrication intricacies, and weak interfacial adhesion, which restrain their broader application. The introduction of novel 2D atomic-molecular heterojunctions (2DAMH), achieved through covalent functionalization of 2D materials with functional molecules, ushers in a new era for brain-like devices by providing both stability and tunability of functionalities. This review chiefly delves into the electronic attributes of 2DAMH derived from the synergy of polymer materials with 2D materials, emphasizing the most recent advancements in their utilization within memristive devices, particularly their potential in replicating the functionality of biological synapses. Despite ongoing challenges pertaining to precision in modification, scalability in production, and the refinement of underlying theories, the proliferation of innovative research is actively pursuing solutions. These endeavors illuminate the vast potential for incorporating 2DAMH within brain-inspired intelligent systems, highlighting the prospect of achieving a more efficient and energy-conserving computing paradigm.

Field-Effect Thermoelectric Hotspot in Monolayer Graphene Transistor

Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field-effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is used to examine a current-carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. It is revealed for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate-controlled charge redistribution and a shift in the Dirac point position, an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tenability is demonstrated. This study reveals the field-effect Peltier contribution in a single graphene-material channel of transistors, offering valuable insights into field-effect thermoelectrics and future on-chip energy management.

Singular Hall Response from a Correlated Ferromagnetic Flat Nodal-Line Semimetal

Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe3GaTe2, with a high Curie temperature of Tc = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe3GaTe2, which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle-resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low-dimensional Fe3GaTe2 with electronic correlation, topology, and room-temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018 cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der Waals heterostructure (vdWH) contacts. We demonstrate that the p-type Schottky formed by MoSH/WSi2N4 and MoHS/WSi2N4 has extremely low Schottky barrier heights (SBHs). Due to its excellent charge injection efficiency, Janus MoSH may be regarded as an effective metal contact for WSi2N4 semiconductors. Furthermore, the interfacial characteristics and electronic structure of Janus MoSH/WSi2N4 vdWHs can not only reduce/eliminate SBH, but also forms the transition from p-ShC to n-ShC type and from Schottky contact (ShC) to Ohmic contact (OhC) through the layer spacing and electric field. Our results can offer a fresh method for optoelectronic applications based on metal/semiconductor Janus MoSH/WSi2N4 vdW heterostructures, which have strong potential in optoelectronic applications.

Superior Charge Transport in Ni-Diamine Conductive MOFs

Two-dimensional conductive metal-organic frameworks (2D cMOFs) are an emerging class of crystalline van der Waals layered materials with tunable porosity and high electrical conductivity. They have been used in a variety of applications, such as energy storage and conversion, chemiresistive sensing, and quantum information. Although designing new conductive 2D cMOFs and studying their composition/structure-property relationships have attracted significant attention, there are still very few examples of 2D cMOFs that exhibit room-temperature electrical conductivity above 1 S cm-1, the value exhibited by activated carbon, a well-known porous and conductive material that serves in myriad applications. When such high conductivities are achieved, Ni-diamine linkages are often involved, yet Ni-diamine MOFs remain difficult to access. Here, we report two new 2D cMOFs made through ortho-diamine connections: M3(HITT)2 (M = Ni, Cu; HITT = 2,3,7,8,12,13-hexaiminotetraazanaphthotetraphene). The electrical conductivity of Ni3(HITT)2 reaches 4.5 S cm-1 at 298 K, whereas the conductivity of Cu3(HITT)2 spans from 0.05 (2Cu+Cu2+) to 10-6 (3Cu2+) upon air oxidation, much lower than that of Ni3(HITT)2. Spectroscopic analysis reveals that Ni3(HITT)2 exhibits significantly stronger in-plane π-d conjugation and higher density of charge carriers compared to Cu3(HITT)2, accounting for the higher electrical conductivity of Ni3(HITT)2. Cu2+/Cu+ mixed valency modulates the energy level and carrier density of Cu3(HITT)2, allowing for a variation of electrical conductivity over 4 orders of magnitude. This work provides a deeper understanding of the influence of metal nodes on electrical conductivity and confirms ortho-diamine linkers as privileged among ligands for 2D cMOFs.

Third-order nonlinear Hall effect in a quantum Hall system

In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is characterized by zero longitudinal resistance (Rxx) and Hall resistance (Rxy) plateaus quantized to h/(υe2) in the linear response regime, where υ is the Landau level filling factor, e is the elementary charge and h is Planck's constant. Here we explore the nonlinear response of monolayer graphene when tuned to a quantum Hall state. We observe a third-order Hall effect that exhibits a nonzero voltage plateau scaling cubically with the probe current. By contrast, the third-order longitudinal voltage remains zero. The magnitude of the third-order response is insensitive to variations in magnetic field (down to ~5 T) and in temperature (up to ~60 K). Moreover, the third-order response emerges in graphene devices with a variety of geometries, different substrates and stacking configurations. We term the effect third-order nonlinear response of the quantum Hall state and propose that electron-electron interaction between the quantum Hall edge states is the origin of the nonlinear response of the quantum Hall state.

Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect

In the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but there is no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on the ab initio band structures of Bi2O2Se thin films, we can ascribe the only even-integer states in thicker films to the hidden Rasbha effect, where the local inversion-symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one-unit-cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by the top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

Extremely large magnetoresistance in twisted intertwined graphene spirals

Extremely large magnetoresistance (XMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, XMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moiré system, which demonstrates XMR owing to its topological structure and high-quality crystal formation. We investigate the electronic properties of three-dimensional intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3°. Notably, at 14 T and 2 K, the magnetoresistance of these structures reaches 1.7 × 107%, accompanied by a metal-insulator transition as the temperature increases. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the possible existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up possibilities for achieving XMR by engineering the topological structure of 2D layered moiré systems.

Realization of Two-dimensional Intrinsic Polar metal in a Buckled Honeycomb Binary Lattice

Structural topology and symmetry of a two-dimensional (2D) network play pivotal roles in defining its electrical properties and functionalities. Here, a binary buckled honeycomb lattice with C3v symmetry, which naturally hosts topological Dirac fermions and out-of-plane polarity, is proposed. It is successfully achieved in a group IV-V compound, namely monolayer SiP epitaxially grown on Ag(111) surface. Combining first-principles calculations with angle-resolved photoemission spectroscopy, the degeneration of the Dirac nodal lines to points due to the broken horizonal mirror symmetry is elucidated. More interesting, the SiP monolayer manifests metallic nature, which is mutually exclusive with polarity in conventional materials. It is further found that the out-of-plane polarity is strongly suppressed by the metallic substrate. This study not only represents a breakthrough of realizing intrinsic polarity in 2D metallic material via ingenious design but also provides a comprehensive understanding of the intricate interplay of many exotic low-dimensional quantum phenomena.

Mechanical reinforcement from two-dimensional nanofillers: model, bulk and hybrid polymer nanocomposites

Thanks to their intrinsic properties, multifunctionality and unique geometrical features, two-dimensional nanomaterials have been used widely as reinforcements in polymer nanocomposites. The effective mechanical reinforcement of polymers is, however, a multifaceted problem as it depends not only on the intrinsic properties of the fillers and the matrix, but also upon a number of other important parameters. These parameters include the processing method, the interfacial properties, the aspect ratio, defects, orientation, agglomeration and volume fraction of the fillers. In this review, we summarize recent advances in the mechanical reinforcement of polymer nanocomposites from two-dimensional nanofillers with an emphasis on the mechanisms of reinforcement. Model, bulk and hybrid polymer nanocomposites are reviewed comprehensively. The use of Raman and photoluminescence spectroscopies is examined in light of the distinctive information they can yield upon stress transfer at interfaces. It is shown that the very diverse family of 2D nanofillers includes a number of materials that can attribute distrinctive features to a polymeric matrix, and we focus on the mechanical properties of both graphene and some of the most important 2D materials beyond graphene, including boron nitride, molybdenum disulphide, other transition metal dichalcogenides, MXenes and black phosphorous. In the first part of the review we evaluate the mechanical properties of 2D nanoplatelets in "model" nanocomposites. Next we examine how the performance of these materials can be optimised in bulk nanocomposites. Finally, combinations of these 2D nanofillers with other 2D nanomaterials or with nanofillers of other dimensions are assessed thoroughly, as such combinations can lead to additive or even synergistic mechanical effects. Existing unsolved problems and future perspectives are discussed.

Atomically thin-layered WS2based resistive sensors for detection of CO and NO2at room temperature

The number of layers present in a two-dimensional (2D) nanomaterial plays a critical role in applications that involve surface interaction, for example, gas sensing. This paper reports the synthesis of 2D WS2nanoflakes using the facile liquid exfoliation technique. The nanoflakes were exfoliated using bath sonication (BS-WS2) and probe sonication (PS-WS2). The thickness of the BS-WS2was found to range between 70 and 200 nm, and that of PS-WS2varied from 0.6 to 80 nm, indicating the presence of single to few layers of WS2when characterized using atomic force microscope. All the WS2samples were thoroughly characterized using electron microscopes, x-ray diffractometer, Raman spectroscopy, UV-Visible spectroscopy, Fourier transform infrared spectroscope, and thermogravimetric analyser. Both the nanostructured samples were exposed to 2 ppm of NO2at room temperature. Interestingly, BS-WS2which comprises of a greater number of WS2layers exhibited -14.2% response as against -3.4% response of PS-WS2, the atomically thin sample. The BS-WS2sample was found to be highly selective towards NO2but was slower (with incomplete recovery) as compared to PS-WS2. The PS-WS2sample was observed to exhibit -11.9% to -27.4% response to 2-10 ppm of CO and -3.4%-35.2% response to 2-10 ppm of NO2at room temperature, thereby exhibiting the potential to detect two gases simultaneously. These gases could be accurately predicted and quantified if the response times of the PS-WS2sample were considered. The atomically thin WS2-based sensor exhibited a limit of detection of 131 and 81 ppb for CO and NO2, respectively.

Multiphoton-pumped UV-Vis transient absorption spectroscopy of 2D materials: basic concepts and recent applications

2D materials are considered a key element in the development of next-generation electronics (nanoelectronics) due to their extreme thickness in the nanometer range and unique physical properties. The ultrafast dynamics of photoexcited carriers in such materials are strongly influenced by their interfaces, since the thickness of 2D materials is much smaller than the typical depth of light penetration into their bulk counterparts and the mean free path of photoexcited carriers. The resulting collisions of photoexcited carriers with interfacial potential barriers of 2D materials in the presence of a strong laser field significantly alter the overall dynamics of photoexcitation, allowing laser light to be directly absorbed by carriers in the conduction/valence band through the inverse bremsstrahlung mechanism. The corresponding ultrafast carrier dynamics can be monitored using multiphoton-pumped UV-Vis transient absorption spectroscopy. In this review, we discuss the basic concepts and recent applications of this spectroscopy for a variety of 2D materials, including transition-metal dichalcogenide monolayers, topological insulators, and other 2D semiconductor structures.

Functionalizing the Electrical Properties of Kombucha Zoogleal Mats for Biosensing Applications

Kombucha is a type of tea that is fermented using yeast and bacteria. During this process, a film made of cellulose is produced. This film has unique properties such as biodegradability, flexibility, shape conformability, and ability to self-grow as well as be produced across customized scales. In our previous studies, we demonstrated that Kombucha mats exhibit electrical activity represented by spikes of the electrical potential. We propose using microbial fermentation as a method for in situ functionalization to modulate the electroactive nature of Kombucha cellulose mats, where graphene and zeolite were used for the functionalization. We subjected the pure and functionalized Kombucha mats to mechanical stimulation by applying different weights and geometries. Our experiments demonstrated that Kombucha mats functionalized with graphene and zeolite exhibit memfractive properties and respond to load by producing distinctive spiking patterns. Our findings present incredible opportunities for the in situ development of functionalized hybrid materials with sensing, computing, and memory capabilities. These materials can self-assemble and self-grow after they fuse their living and synthetic components. This study contributes to an emergent area of research on bioelectronic sensing and hybrid living materials, opening up exciting opportunities for use in smart wearables, diagnostics, health monitoring, and energy harvesting applications.

Exfoliation of Molecular Solids by the Synergy of Ultrasound and Use of Surfactants: A Novel Method Applied to Boric Acid

Boric acid, H3BO3, is a molecular solid made up of layers held together by weak van der Waals forces. It can be considered a pseudo "2D" material, like graphite, compared to graphene. The key distinction is that within each individual layer, the molecular units are connected not only by strong covalent bonds but also by hydrogen bonds. Therefore, classic liquid exfoliation is not suitable for this material, and a specific method needs to be developed. Preliminary results of exfoliation of boric acid particles by combination of ultrasound and the use of surfactants are presented. Ultrasound provides the system with the energy needed for the process, and the surfactant can act to keep the crystalline flakes apart. A system consisting of a saturated solution and large excess solid residue of boric acid was treated in this way for a few hours at 40 °C in the presence of various sodium stearate, proving to be very promising, and an incipient exfoliation was achieved.

Enhanced Quantum Metric due to Vacancies in Graphene

Random vacancies in a graphene monolayer induce defect states that are known to form a narrow impurity band centered around zero energy at half filling. We use a space-resolved formulation of the quantum metric and establish a strong enhancement of the electronic correlations in this impurity band. The enhancement is primarily due to strong correlations between pairs of vacancies situated on different sublattices at anomalously large spatial distances. We trace the strong enhancement to both the multifractal vacancy wave functions, which ties the system exactly at the Anderson insulator transition for all defect concentrations, and preserving the chiral symmetry.

Exploration of isoelectronic substitution in graphene dioxide for photocatalytic and photovoltaic applications - an ab-initio study

Herein, we propose graphene dioxide (GDO) derivatives as promising materials for green hydrogen production by photocatalytic water splitting. The optoelectronic and photocatalytic properties of GDO, an insulator with a wide band gap, are tuned by designing new compositions through isovalent substitution of S/Se at the O site, Si and (B,N) at the C site. The newly predicted GDO derivatives were studied using hybrid functional calculations and our results show that several of these materials exhibit semiconducting behavior with a direct band gap value higher than 1.23 eV, hence appropriate for visible light-driven photocatalytic water splitting. The structural stability of these materials was analyzed by total energy and lattice dynamical calculations. The photo generated charge carriers possess lower effective mass and hence higher carrier mobility resulting in suppressed recombination rate and hence improving the water splitting efficiency. Apart from low excitonic binding energy, the electronic structure analysis shows that in several of these compounds the electrons and holes reside in two different atomic sites ensuring further reduction in recombination rate. The relatively higher absorption coefficient of GDO derivatives in the visible part of the solar spectrum indicates enhanced photoconversion efficiency suitable for solar cell applications also and it was further determined by photovoltaic performance parameter analysis. The band edge potential of GDO derivatives is well straddled by the water redox potential at different pHs, suggesting their potential for water splitting along with the possibility of CO2 reduction. Our findings indicate that the newly predicted compositions hold significant promise for photocatalytic as well as photovoltaic applications.

Copper-Graphene Composite (CGC) Conductors: Synthesis, Microstructure, and Electrical Performance

Improving the electrical performance of copper, the most widely used electrical conductor in the world is of vital importance to the progress of key technologies, including electric vehicles, portable devices, renewable energy, and power grids. Copper-graphene composite (CGC) stands out as the most promising candidate for high-performance electrical conductor applications. This can be attributed to the superior properties of graphene fillers embedded in CGC, including excellent electrical and thermal conductivity, corrosion resistance, and high mechanical strength. This review highlights the recent progress of CGC conductors, including their fabrication processes, electrical performances, mechanisms of copper-graphene interplay, and potential applications.

Study of MoS2 as an Electric Field Sensor and the Role of Layer Thickness on the Sensitivity

In this study, we investigate the scope of molybdenum disulfide (MoS2) as an electric field sensor. We show that MoS2 sensors can be used to identify the polarity as well as to detect the magnitude of the electric field. The response of the sensor is recorded as the change in the drain current when the electric field is applied. The sensitivity, defined as the percentage change in the drain current, reveals that it has a linear relation with the magnitude of the electric field. Furthermore, the sensitivity is highly dependent on the layer thickness, with the single-layer device being highly sensitive and the sensitivity decreasing with the thickness. We have also compared the electric field sensitivity of MoS2 devices to that of previously studied graphene devices and found the former to be exceptionally sensitive than the latter for a given electric field magnitude.

Implementation of excellent spin-filtering effect in half-metallic electrode-based single-molecule optoelectronic devices

The application of half-metallic materials in single-molecule optoelectronic devices opens a promising way in advancing device performance and functionality, thus addressing a research question of significance. Here we propose a series of single-molecule devices with half-metallic FeN4-doped armchair graphene nanoribbon as electrodes and metalloporphyrin (MPr) molecules as photoresponsive materials for photon harvesting, which are driven by photogalvanic effects (PGEs). Through the quantum transport simulations, we systematically investigated the spin-polarized photocurrents under the linearly polarized light illumination in these devices. Since the exclusive opening only exists in the spin-up channel of the half-metallic nanoribbons, these devices can generate a large photocurrent in the spin-up direction whereas suppressing the spin-down photocurrent. Consequently, they exhibit an effective spin-filtering effect at numerous photon energies. Our study unveils the excellent spin-filtering effect achieved in single-molecule optoelectronic devices with half-metallic electrodes, showing instructive significance for the future design of new optoelectronic devices.

Graphene via Microwave Expansion of Graphite Followed by Cryo-Quenching and its Application in Electrostatic Droplet Switching

Monoelemental atomic sheets (Xenes) and other 2D materials offer record electronic mobility, high thermal conductivity, excellent Young's moduli, optical transparency, and flexural capability, revolutionizing ultrasensitive devices and enhancing performance. The ideal synthesis of these quantum materials should be facile, fast, scalable, reproducible, and green. Microwave expansion followed by cryoquenching (MECQ) leverages thermal stress in graphite to produce high-purity graphene within minutes. MECQ synthesis of graphene is reported at 640 and 800 W for 10 min, followed by liquid nitrogen quenching for 5 and 90 min of sonication. Microscopic and spectroscopic analyses confirmed the chemical identity and phase purity of monolayers and few-layered graphene sheets (200-12 µm). Higher microwave power yields thinner layers with enhanced purity. Molecular dynamics simulations and DFT calculations support the exfoliation under these conditions. Electrostatic droplet switching is demonstrated using MECQ-synthesized graphene, observing electrorolling of a mercury droplet on a BN/graphene interface at voltages above 20 V. This technique can inspire the synthesis of other 2D materials with high purity and enable new applications.

Electron wave and quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states,e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

Semiconducting 2D Copper(I) Iodide Coordination Polymer as a Potential Chemiresistive Sensor for Methanol

The development of a cost-effective, ultra-selective, and room temperature gas sensor is the need of an hour, owing to the rapid industrialization. Here, a new 2D semiconducting Cu(I) coordination polymer (CP) with 1,4-di(1H-1,2,4-triazol-1-yl)benzene (1,4-TzB) ligand is reported. The CP1 consists of a Cu2I2 secondary building unit bridged by 1,4-TzB, and has high stability as well as semiconducting properties. The chemiresistive sensor, developed by a facile drop-casting method derived from CP1, demonstrates a response value of 66.7 at 100 ppm on methanol exposure, accompanied by swift transient (response and recovery time 17.5 and 34.2 s, respectively) behavior. In addition, the developed sensor displays ultra-high selectivity toward methanol over other volatile organic compounds , boasting LOD and LOQ values of 1.22 and 4.02 ppb, respectively. The CP is found to be a state-of-the-art chemiresistive sensor with ultra-high sensitivity and selectivity toward methanol at room temperature.

Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T

Inkjet-printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to the charge transport in iGr is yet to be explored. Here, the first magneto-transport study of iGr in high magnetic fields up to 60 T is presented. The observed quantum phenomena, such as weak localization and negative magnetoresistance, are strongly affected by the thickness of the iGr film and can be explained by a combination of intra- and inter-flake classical and quantum charge transport. The quantum nature of carrier transport in iGr is revealed using temperature, electric field, and magnetic field dependences of the iGr conductivity. These results are relevant for the exploitation of inkjet deposition of graphene, which is of particular interest for additive manufacturing and 3D printing of flexible and wearable electronics. It is shown that printed nanostructures enable ensemble averaging of quantum interference phenomena within a single device, thereby facilitating comparison between experiment and underlying statistical models of electron transport.

Chiral Honeycomb Lattices of Nonplanar π-Conjugated Supramolecules with Protected Dirac and Flat Bands

The honeycomb lattice is a fundamental two-dimensional (2D) network that gives rise to surprisingly rich electronic properties. While its expansion to 2D supramolecular assembly is conceptually appealing, its realization is not straightforward because of weak intermolecular coupling and the strong influence of a supporting substrate. Here, we show that the application of a triptycene derivative with phenazine moieties, Trip-Phz, solves this problem due to its strong intermolecular π-π pancake bonding and nonplanar geometry. Our scanning tunneling microscopy (STM) measurements demonstrate that Trip-Phz molecules self-assemble on a Ag(111) surface to form chiral and commensurate honeycomb lattices. Electronically, the network can be viewed as a hybrid of honeycomb and kagome lattices. The Dirac and flat bands predicted by a simple tight-binding model are reproduced by total density functional theory (DFT) calculations, highlighting the protection of the molecular bands from the Ag(111) substrate. The present work offers a rational route for creating chiral 2D supramolecules that can simultaneously accommodate pristine Dirac and flat bands.

Spin-Dependent ππ^{*} Gap in Graphene on a Magnetic Substrate

We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle- and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the intercalation of Eu in the graphene/Ni(111) interface gives rise to a gapped freestanding dispersion of the ππ^{*} Dirac cones at the K[over ¯] point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature and a spin-polarized Van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.

Charged Black-Hole-Like Electronic Structure Driven by Geometric Potential of 2D Semiconductors

One of the exotic expectations in the 2D curved spacetime is the geometric potential from the curvature of the 2D space, still possessing unsolved fundamental questions through Dirac quantization. The atomically thin 2D materials are promising for the realization of the geometric potential, but the geometric potential in 2D materials is not identified experimentally. Here, the curvature-induced ring-patterned bound states are observed in structurally deformed 2D semiconductors and formulated the modified geometric potential for the curvature effect, which demonstrates the ring-shape bound states with angular momentum. The formulated modified geometric potential is analogous to the effective potential of a rotating charged black hole. Density functional theory and tight-binding calculations are performed, which quantitatively agree well with the results of the modified geometric potential. The modified geometric potential is described by modified Gaussian and mean curvatures, corresponding to the curvature-induced changes in spin-orbit interaction and band gap, respectively. Even for complex structural deformation, the geometric potential solves the complexity, which aligns well with experimental results. The understanding of the modified geometric potential provides us with an intuitive clue for quantum transport and a key factor for new quantum applications such as valleytronics, spintronics, and straintronics in 2D semiconductors.

Characteristics and performance of layered two-dimensional materials under doping engineering

In recent years, doping engineering, which is widely studied in theoretical and experimental research, is an effective means to regulate the crystal structure and physical properties of two-dimensional materials and expand their application potential. Based on different types of element dopings, different 2D materials show different properties and applications. In this paper, the characteristics and performance of rich layered 2D materials under different types of doped elements are comprehensively reviewed. Firstly, 2D materials are classified according to their crystal structures. Secondly, conventional experimental methods of charge doping and heterogeneous atom substitution doping are summarized. Finally, on the basis of various theoretical research results, the properties of several typical 2D material representatives under charge doping and different kinds of atom substitution doping as well as the inspiration and expansion of doping systems for the development of related fields are discussed. Through this review, researchers can fully understand and grasp the regulation rules of different doping engineering on the properties of layered 2D materials with different crystal structures. It provides theoretical guidance for further improving and optimizing the physical properties of 2D materials, improving and enriching the relevant experimental research and device application development.

Enhancement of superconductivity in Zr2S2C arising from phonon softening on transition from bulk to monolayer

We report a new compound, Zr2S2C, belonging to the transition metal carbo-chalcogenide (TMCC) family. Through first-principles calculations, our analysis of phonon dispersion spectra indicates that the compound is dynamically stable in both bulk and monolayer forms. We systematically investigated the electronic structure, phonon dispersion, and electron-phonon coupling (EPC) driven superconducting properties in bulk and monolayer Zr2S2C. The results demonstrate the metallic character of bulk Zr2S2C, with a weak EPC strength (λ) of 0.41 and superconducting critical temperature (Tc) of ∼3 K. The monolayer Zr2S2C has an enhancedλof 0.62 andTcof ∼6.4 K. The increasedλvalue in the monolayer results from the softening of the acoustic phonon mode. We found that when biaxial strain is applied, the low energy acoustic phonon mode in monolayer becomes even softer. This softening leads to a transformation of the Zr2S2C monolayer from its initial weak coupling state (λ= 0.62) to a strongly coupled state, resulting in an increasedλvalue of 1.33. Consequently, the superconducting critical temperature experiences a twofold increase. These findings provide a theoretical framework for further exploration of the layered two-dimensional TMCC family, in addition to offering valuable insights.

Sub-Sharvin Conductance and Incoherent Shot-Noise in Graphene Disks at Magnetic Field

Highly doped graphene samples show reduced conductance and enhanced shot-noise power compared with standard ballistic systems in two-dimensional electron gas. These features can be understood within a model that assumes incoherent scattering of Dirac electrons between two interfaces separating the sample and the leads. Here we find, by adopting the above model for the edge-free (Corbino) geometry and by computer simulation of quantum transport, that another graphene-specific feature should be observable when the current flow through a doped disk is blocked by a strong magnetic field. When the conductance drops to zero, the Fano factor approaches the value of F≈0.56, with a very weak dependence on the ratio of the disk radii. The role of finite source-drain voltages and the system behavior when the electrostatic potential barrier is tuned from a rectangular to a parabolic shape are also discussed.

First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability

Designing two-dimensional (2D) heterojunctions with rapid response and minimal energy consumption holds immense significance for the advancement of the next generation of electronic devices. Here, we construct a series of Schottky heterojunctions based on TiB4 monolayer and group-IV monochalcogenide monolayers MX (M = Ge, Sn; X = S, Se, Te). Using first-principles calculations, we investigate the structural stability, Schottky contact barrier, tunneling probability, and optical properties of MX/TiB4 heterojunctions. The calculated binding energies reveal that X-type MX/TiB4 heterojunctions exhibit more stable structures than M- and C-type stacking modes. Schottky barrier heights (SBHs) indicate that X-type GeSe/TiB4 and GeTe/TiB4 form n-type Schottky contacts with SBHs of 0.497 and 0.132 eV, respectively, while SnS/TiB4 and SnSe/TiB4 form p-type Schottky contacts with SBHs of 0.557 and 0.418 eV, respectively. Moreover, X-type MX/TiB4 heterojunctions exhibit high susceptibility to interlayer electron tunneling due to their large tunneling probability and strong interlayer interaction. Meanwhile, enhanced optical absorption capacity in MX/TiB4 heterojunctions is also observed compared with individual TiB4 and MX monolayers. By applying in-plane biaxial strain, the transformation of MX/TiB4 heterojunctions from a Schottky contact to an Ohmic contact can also be realized. Our findings could offer valuable candidate materials and guidance for the design of the next generation of nanodevices with high electronic and optical performances.

First-Principles Study on Janus-Structured Sc2CX2/Sc2CY2 (X, Y = F, Cl, Br) Heterostructures for Solar Energy Conversion

Two-dimensional van der Waals heterostructures have good application prospects in solar energy conversion due to their excellent optoelectronic performance. In this work, the electronic structures of Sc2CF2/Sc2CCl2, Sc2CF2/Sc2CBr2, and Sc2CCl2/Sc2CBr2 heterostructures, as well as their properties in photocatalysis and photovoltaics, have been comprehensively studied using the first-principles method. Firstly, both of the three thermodynamically and dynamically stable heterostructures are found to have type-II band alignment with band gap values of 0.58 eV, 0.78 eV, and 1.35 eV. Meanwhile, the photogenerated carriers in Sc2CF2/Sc2CCl2 and Sc2CF2/Sc2CBr2 heterostructures are predicated to follow the direct Z-scheme path, enabling their abilities for water splitting. As for the Sc2CCl2/Sc2CBr2 heterostructure, its photovoltaic conversion efficiency is estimated to be 20.78%. Significantly, the light absorption coefficients of Sc2CF2/Sc2CCl2, Sc2CF2/Sc2CBr2, and Sc2CCl2/Sc2CBr2 heterostructures are enhanced more than those of the corresponding monolayers. Moreover, biaxial strains have been observed to considerably tune the aforementioned properties of heterostructures. All the theoretical results presented in this work demonstrate the application potential of Sc2CX2/Sc2CY2 (X, Y = F, Cl, Br) heterostructures in photocatalysis and photovoltaics.

Thermal Surface Properties, London Dispersive and Polar Surface Energy of Graphene and Carbon Materials Using Inverse Gas Chromatography at Infinite Dilution

The thermal surface properties of graphenes and carbon materials are of crucial importance in the chemistry of materials, chemical engineering, and many industrial processes.

BACKGROUND

The determination of these surface properties is carried out using inverse gas chromatography at infinite dilution, which leads to the retention volume of organic solvents adsorbed on solid surfaces. This experimental and fundamental parameter actually reflects the surface thermodynamic interactions between injected probes and solid substrates.

METHODS

The London dispersion equation and the Hamieh thermal model are used to quantify the London dispersive and polar surface energy of graphenes and carbon fibers as well their Lewis acid-base constants by introducing the coupling amphoteric constant of materials.

RESULTS

The London dispersive and polar acid-base surface energies, the free energy of adsorption, the polar enthalpy and entropy, and the Lewis acid-base constants of graphenes and carbon materials are determined.

CONCLUSIONS

It is shown that graphene exhibited the highest values of London dispersive surface energy, polar surface energy, and Lewis acid-base constants. The highest characteristics of graphene justify its great potentiality and uses in many industrial applications.

Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs

Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in the experiment still present notable reliability issues, and the underlying reason remains unclear. Here, we studied the various intrinsic defects and adsorbates in CaF2/molybdenum disulfide (MoS2) and CaF2/molybdenum disilicon tetranitride (MoSi2N4) interface systems to reveal the most active charge-trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table comparing the importance of different defects in both n-type and p-type devices is provided. Most impressively, the oxygen molecules (O2) adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop a high-vacuum packaging process, as well as prepare high-quality 2D materials for better device performance.

Two-dimensional Janus X2STe (X = B, Al) monolayers: the effect of surface selectivity and adsorption of small gas molecules on electronic and optical properties

This investigation delves into the adsorption characteristics of CO, NO, NO2, NH3, and O2 on two-dimensional (2D) Janus group-III materials, specifically Al2XY and B2XY. The examination covers adsorption energies and heights, diverse adsorption sites, and molecular orientations. Employing first-principles analysis, a comprehensive assessment of structural, electronic, and optical properties is conducted. The findings highlight NO2 as a prominent adsorbate, emphasizing the Te surface of 2D Al2STe and B2STe materials as particularly adept for NO2 detection, based on considerations of adsorption energy, height, and charge transfer. Additionally, the study underscores the heightened sensitivity of work function changes in the B2STe material. The adsorption properties of all gas molecules, except for NO2, on both materials were determined to be physical. Upon adsorption of the NO2 gas molecule onto the B2STe Janus material, it was observed that the material exhibited weak chemical adsorption behavior, which was confirmed by the adsorption energy, larger band gap change, electron localization function, work function changes and charge transfer from the material. This research provides valuable insights into the gas-sensing potential of 2D Janus materials.

Transfer of 2D Films: From Imperfection to Perfection

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe2

Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we investigate a popular TMDC material WSe2's photoluminescence performance using a Raman spectroscopy laser with temperature dependence. With temperature variation, the lattice constant and the band gap change dramatically, and thus the photoluminescence spectra are changed. By checking the photoluminescence spectra at different temperatures, we are able to reveal the nature of direct-to-indirect band gap in monolayer WSe2. We also implemented density function theory (DFT) simulations to computationally investigate the band gap of WSe2 to provide comprehensive evidence and confirm the experimental results. Our study suggests that monolayer WSe2 is at the transition boundary between the indirect and direct band gap at room temperature. This result provides insights into temperature-dependent optical transition in monolayer WSe2 for quantum control, and is important for cultivating the potential of monolayer WSe2 in thermally tunable optoelectronic devices operating at room temperature.