1
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Gerwig M, Böhme U, Friebel M. Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition. Chemistry 2024; 30:e202400013. [PMID: 38757614 DOI: 10.1002/chem.202400013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Indexed: 05/18/2024]
Abstract
Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.
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Affiliation(s)
- Maik Gerwig
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
| | - Uwe Böhme
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
| | - Mike Friebel
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
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2
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Langer F, Yin S, Duvigneau J, Vancso GJ, Benson N. Suppression of the Coffee Ring Effect in a Single Solvent-Based Silicon Nanoparticle Ink. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4242-4248. [PMID: 38193452 DOI: 10.1021/acsami.3c16316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/10/2024]
Abstract
Silicon (Si) is made printable by dispersing Si nanoparticles in a single organic solvent. Viscoelastic properties of the prepared inks as well as the uniformity of inkjet-printed thin films are investigated in dependence on the Si volume fraction. It has been demonstrated that no ink additives are needed to completely suppress the occurrence of the coffee ring effect. This is obtained by increasing the ink's volume fraction to induce gelation in order to generate elasticity. The printability of our inks is investigated in terms of Weber, Reynolds, and Ohnesorge numbers and found to be maintained even at high particle loads due to shear-thinning viscosity behavior. When printed onto tungsten (W) substrates, Si inks with ϕ(Si) = 0.4% and ϕ(Si) = 2.1% leave a ring stain after drying, whereas coffee rings are absent for inks with ϕ(Si) = 3.0% and above. The reason for this is a significant ink elasticity achieved by the buildup of a gel network for higher particle loads, which leads to thixotropy-like properties. These are low viscosity for printability and elevated elasticity during ink drying, made possible by a breakup of the gel network during drop formation in conjunction with a rapid network reformation after deposition.
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Affiliation(s)
- Fabian Langer
- Institute of Technologies for Nanostructures (NST), University of Duisburg-Essen and CENIDE, Duisburg D-47048, Germany
| | - Sida Yin
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - Joost Duvigneau
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - G Julius Vancso
- Materials Science and Technology of Polymers and Sustainable Polymer Chemistry, University of Twente, Enschede 7522 NB, The Netherlands
| | - Niels Benson
- Institute of Technologies for Nanostructures (NST), University of Duisburg-Essen and CENIDE, Duisburg D-47048, Germany
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3
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Sauermoser A, Lainer T, Knoechl A, Goni F, Fischer RC, Fitzek H, Dienstleder M, Prietl C, Kelterer AM, Bandl C, Jakopic G, Kothleitner G, Haas M. Fabrication of Amorphous Silicon-Carbon Hybrid Films Using Single-Source Precursors. Inorg Chem 2023; 62:15490-15501. [PMID: 37700615 PMCID: PMC10523434 DOI: 10.1021/acs.inorgchem.3c01846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Indexed: 09/14/2023]
Abstract
The aim of this study was the preparation of different amorphous silicon-carbon hybrid thin-layer materials according to the liquid phase deposition (LPD) process using single-source precursors. In our study, 2-methyl-2-silyltrisilane (methylisotetrasilane; 2), 1,1,1-trimethyl-2,2-disilyltrisilane (trimethylsilylisotetrasilane; 3), 2-phenyl-2-silyltrisilane (phenylisotetrasilane; 4), and 1,1,2,2,4,4,5,5-octamethyl-3,3,6,6-tetrasilylcyclohexasilane (cyclohexasilane; 5) were utilized as precursor materials and compared with the parent compound 2,2-disilyltrisilane (neopentasilane; 1). Compounds 2-5 were successfully oligomerized at λ = 365 nm with catalytic amounts of the neopentasilane oligomer (NPO). These oligomeric mixtures (NPO and 6-9) were used for the preparation of thin-layer materials. Optimum solution and spin coating conditions were investigated, and amorphous silicon-carbon films were obtained. All thin-layer materials were characterized via UV/vis spectroscopy, light microscopy, spectroscopic ellipsometry, XPS, SEM, and SEM/EDX. Our results show that the carbon content and especially the bandgap can be easily tuned using these single-source precursors via LPD.
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Affiliation(s)
- Aileen Sauermoser
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
| | - Thomas Lainer
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
| | - Andreas Knoechl
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
| | - Freskida Goni
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
| | - Roland C. Fischer
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
| | - Harald Fitzek
- Graz
Centre for Electron Microscopy (ZFE), Steyrergasse 17, 8010 Graz, Austria
| | - Martina Dienstleder
- Graz
Centre for Electron Microscopy (ZFE), Steyrergasse 17, 8010 Graz, Austria
| | - Christine Prietl
- Institute
for Sensors, Photonics and Manufacturing Technologies, Joanneum Research, Franz-Pichler-Straße 30, 8160 Weiz, Austria
| | - Anne-Marie Kelterer
- Institute
of Physical and Theoretical Chemistry, Graz
University of Technology, Stremayrgasse 9/II, 8010 Graz, Austria
| | - Christine Bandl
- Institute
of Chemistry of Polymeric Materials, Montanuniversität
Leoben, Otto-Glöckelstrasse
2, A 8700 Leoben, Austria
| | - Georg Jakopic
- Institute
for Sensors, Photonics and Manufacturing Technologies, Joanneum Research, Franz-Pichler-Straße 30, 8160 Weiz, Austria
| | - Gerald Kothleitner
- Institute
of Electron Microscopy and Nanoanalysis, Technische Universität Graz, Steyrergasse 17, 8010 Graz, Austria
| | - Michael Haas
- Institute
of Inorganic Chemistry, Graz University
of Technology; Stremayrgasse 9/V, 8010 Graz, Austria
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4
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Friebel M, Böhme U, Kroke E. A perphenylated PSi4P-chain: Synthesis and characterization of 1,4-bis(diphenylphosphanyl)octaphenyl-n-tetrasilane. J Organomet Chem 2023. [DOI: 10.1016/j.jorganchem.2022.122539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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5
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Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor. Commun Chem 2022; 5:178. [PMID: 36697684 PMCID: PMC9814745 DOI: 10.1038/s42004-022-00797-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Accepted: 12/12/2022] [Indexed: 12/25/2022] Open
Abstract
Phthalocyanine-based organic thin-film transistors (OTFTs) have been demonstrated as sensors for a range of analytes, including cannabinoids, in both liquid and gas phases. Detection of the primary cannabinoids, Δ9-tetrahydrocannabinol (THC) and cannabidiol (CBD), is necessary for quality control and regulation, however, current techniques are often not readily available for consumers, industry, and law-enforcement. The OTFT characteristics, X-ray diffraction (XRD) spectra, and grazing incident wide angle x-ray scattering (GIWAXS) spectra of two copper and three zinc phthalocyanines, with varying degrees of peripheral fluorination, were screened to determine sensitivity to THC vapor. Unsubstituted ZnPc was found to be the most sensitive material and, by tuning thin-film morphology, crystal polymorphs, and thickness through altered physical vapor deposition conditions, we increased the sensitivity to THC by 100x. Here we demonstrate that deposition conditions, and the resulting physical film characteristics, play a significant role in device sensitization.
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6
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Friebel M, Böhme U, Kroke E. Linear Phenylsilanes with PSi4P, PSi5P, and Si7 Backbones. Eur J Inorg Chem 2022. [DOI: 10.1002/ejic.202200087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Mike Friebel
- TU Bergakademie Freiberg: Technische Universitat Bergakademie Freiberg Institut für Anorganische Chemie GERMANY
| | - Uwe Böhme
- TU Bergakademie Freiberg Institut für Anorganische Chemie Leipziger Str. 29 09599 Freiberg GERMANY
| | - Edwin Kroke
- TU Bergakademie Freiberg: Technische Universitat Bergakademie Freiberg Institut für Anorganische Chemie GERMANY
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7
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Roy MMD, Omaña AA, Wilson ASS, Hill MS, Aldridge S, Rivard E. Molecular Main Group Metal Hydrides. Chem Rev 2021; 121:12784-12965. [PMID: 34450005 DOI: 10.1021/acs.chemrev.1c00278] [Citation(s) in RCA: 124] [Impact Index Per Article: 41.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.
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Affiliation(s)
- Matthew M D Roy
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Alvaro A Omaña
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Andrew S S Wilson
- Department of Chemistry, University of Bath, Avon BA2 7AY, United Kingdom
| | - Michael S Hill
- Department of Chemistry, University of Bath, Avon BA2 7AY, United Kingdom
| | - Simon Aldridge
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Eric Rivard
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
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8
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Nagarkar AA, Root SE, Fink MJ, Ten AS, Cafferty BJ, Richardson DS, Mrksich M, Whitesides GM. Storing and Reading Information in Mixtures of Fluorescent Molecules. ACS CENTRAL SCIENCE 2021; 7:1728-1735. [PMID: 34729416 PMCID: PMC8554834 DOI: 10.1021/acscentsci.1c00728] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Indexed: 05/22/2023]
Abstract
The rapidly increasing use of digital technologies requires the rethinking of methods to store data. This work shows that digital data can be stored in mixtures of fluorescent dye molecules, which are deposited on a surface by inkjet printing, where an amide bond tethers the dye molecules to the surface. A microscope equipped with a multichannel fluorescence detector distinguishes individual dyes in the mixture. The presence or absence of these molecules in the mixture encodes binary information (i.e., "0" or "1"). The use of mixtures of molecules, instead of sequence-defined macromolecules, minimizes the time and difficulty of synthesis and eliminates the requirement of sequencing. We have written, stored, and read a total of approximately 400 kilobits (both text and images) with greater than 99% recovery of information, written at an average rate of 128 bits/s (16 bytes/s) and read at a rate of 469 bits/s (58.6 bytes/s).
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Affiliation(s)
- Amit A. Nagarkar
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Samuel E. Root
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Michael J. Fink
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Alexei S. Ten
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Brian J. Cafferty
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Douglas S. Richardson
- Harvard
Center for Biological Imaging, 16 Divinity Avenue, Cambridge, Massachusetts 02138, United States
| | - Milan Mrksich
- Department
of Chemistry and Department of Biomedical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - George M. Whitesides
- Department
of Chemistry and Chemical Biology, Harvard
University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
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9
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Abstract
The continuously decreasing size of device features in microelectronics draws growing attention to the structuring of silicon at the molecular level with powerful tools provided by synthetic chemistry. Silicon clusters are of particular importance in this regard not only as potential precursors for silicon deposition but also as well-defined model systems for bulk and surfaces of silicon at the nanoscale as well as possible starting points for future construction of molecularly precise device structures. This review aims to give a comprehensive overview about the state of the art in the synthesis of molecular silicon clusters, which are grouped into (1) electron-precise saturated clusters, (2) soluble polyhedral Zintl anions, and (3) unsaturated silicon clusters, the so-called siliconoids. Particular attention is paid to functionalization as it is generally considered a necessary prerequisite for the design and construction of more extended systems. The interrelations between the three different classes of molecular silicon clusters, e.g., arising from the introduction of negatively charged functional groups, are highlighted on grounds of NMR properties and computed electronic structures.
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Affiliation(s)
- Yannic Heider
- Chair of General and Inorganic Chemistry, Department of Chemistry, Saarland University, 66123 Saarbrücken, Germany
| | - David Scheschkewitz
- Chair of General and Inorganic Chemistry, Department of Chemistry, Saarland University, 66123 Saarbrücken, Germany
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10
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Masuda T, Mori M. Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes. NANOTECHNOLOGY 2021; 32:195301. [PMID: 33508819 DOI: 10.1088/1361-6528/abe0e9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Solid Si (wafer) and gaseous Si (silane) are generally used as starting materials for fabricating Si devices. In this study, a liquid precursor (liquid-phase hydrosilane) for semiconducting Si, called liquid Si (liq-Si), was synthesized to establish a liquid pathway for fabricating Si. Although the liquid-to-solid Si conversion can be induced by heating at 400 °C, conversion without heating was realized herein by electron-beam (EB) irradiation. This study is the first to irradiate liq-Si with EB. Size-controllable Si nanodots, with diameters of the order of 100 nm, were directly deposited at any point by liquid-phase electron-beam-induced deposition (LP-EBID) with a beam diameter of 50 nm. This approach yielded less-contaminated deposits at the detection limit of energy-dispersive x-ray spectroscopy, as opposed to typical EBID, wherein carbon impurities up to 90% are found. The processing resolution of LP-EBID is potentially 1 nm or less. Therefore, this non-heating deposition technique realizes the direct writing of Si nanostructures and would be a powerful tool for Si nanofabrication.
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Affiliation(s)
- Takashi Masuda
- School of Material Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
- Cucullus Inc., 1-18, Chuo-dori, Kanazawa, Ishikawa, 920-0866, Japan
- Verein artworker.org, Skodagasse, A-1080, Wien, Austria
| | - Masahiro Mori
- School of Material Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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11
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Lee PTK, Samedov K, Belli RG, Clarke CJ, Gates DP, Rosenberg L. A thermolytic route to a polysilyne. Chem Commun (Camb) 2020; 56:14063-14066. [PMID: 33104133 DOI: 10.1039/d0cc05843b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
We report a safe and convenient method to prepare a new class of network polysilane, or polysilyne ([RSi]n). Simple thermolysis of a readily accessible linear poly(phenylsilane), [PhSiH]n, affords polysilyne [PhSi]n with concomitant evolution of monosilanes. This new polymer shows a hyperbranched structure with unique features not observed in known polysilynes prepared via hazardous Wurtz coupling routes. Despite these differences, our soluble, yellow polysilyne exhibits some important properties associated with the traditional random network structure: it absorbs up to 400 nm in the UV spectrum, yet is stable to photolysis under inert atmosphere. This efficient new synthetic route opens the door to exciting applications for these hyperbranched polymers in materials and device technologies.
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Affiliation(s)
- Peter T K Lee
- Department of Chemistry, University of Victoria, P. O. Box 1700, STN CSC, Victoria, British Columbia V8W 2Y2, Canada.
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12
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Fang Y, Meng L, Prominski A, Schaumann E, Seebald M, Tian B. Recent advances in bioelectronics chemistry. Chem Soc Rev 2020; 49:7978-8035. [PMID: 32672777 PMCID: PMC7674226 DOI: 10.1039/d0cs00333f] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Research in bioelectronics is highly interdisciplinary, with many new developments being based on techniques from across the physical and life sciences. Advances in our understanding of the fundamental chemistry underlying the materials used in bioelectronic applications have been a crucial component of many recent discoveries. In this review, we highlight ways in which a chemistry-oriented perspective may facilitate novel and deep insights into both the fundamental scientific understanding and the design of materials, which can in turn tune the functionality and biocompatibility of bioelectronic devices. We provide an in-depth examination of several developments in the field, organized by the chemical properties of the materials. We conclude by surveying how some of the latest major topics of chemical research may be further integrated with bioelectronics.
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Affiliation(s)
- Yin Fang
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Lingyuan Meng
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | | | - Erik Schaumann
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Matthew Seebald
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Bozhi Tian
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- The Institute for Biophysical Dynamics, University of Chicago, Chicago, IL 60637, USA
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13
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Masuda T, Nakayama M, Saito K, Katayama H, Terakawa A. Inkjet Printing of Liquid Silicon. Macromol Rapid Commun 2020; 41:e2000362. [PMID: 33089584 DOI: 10.1002/marc.202000362] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Revised: 09/10/2020] [Indexed: 11/09/2022]
Abstract
A precursor solution for semiconducting Si called liquid Si (liq-Si) is synthesized, and semiconducting Si is inkjet-printed. Satisfactory inkjet discharge is achieved using liq-Si consisting of liquid-phase polysilane with an average molecular weight of 2500 g mol-1 . The printed liq-Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root-mean-square roughness of 0.8 nm. These results are extended to n- and p-type Si films by synthesizing liq-Si chemically doped with P and B compounds, respectively. Liq-Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.
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Affiliation(s)
- Takashi Masuda
- School of Material Science, Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan.,Verein artworker.org, Skodagasse, Wien, 1080, Austria
| | - Maui Nakayama
- School of Material Science, Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan
| | - Kimihiko Saito
- Faculty of Symbiotic Systems Science, Fukushima University, Fukushima, 960-1296, Japan
| | - Hirotaka Katayama
- Energy System Division, Advanced PV Technology Group, Panasonic Corporation, Osaka, 597-0094, Japan
| | - Akira Terakawa
- Energy System Division, Advanced PV Technology Group, Panasonic Corporation, Osaka, 597-0094, Japan
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14
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Kühnel L, Neumann K, Neises J, Langer F, Erni D, Schmechel R, Benson N. Nanoparticle ink‐based silicon Schottky diodes operating up to 2.84 GHz. NANO SELECT 2020. [DOI: 10.1002/nano.202000102] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022] Open
Affiliation(s)
- Laura Kühnel
- Institute of Technology for Nanostructures (NST) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Kevin Neumann
- General and Theoretical Electrical Engineering (ATE) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Julian Neises
- Institute of Technology for Nanostructures (NST) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Fabian Langer
- Institute of Technology for Nanostructures (NST) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Daniel Erni
- General and Theoretical Electrical Engineering (ATE) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Roland Schmechel
- Institute of Technology for Nanostructures (NST) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
| | - Niels Benson
- Institute of Technology for Nanostructures (NST) University of Duisburg‐Essen, and CENIDE Duisburg D‐47048 Germany
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15
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Gerwig M, Böhme U, Friebel M, Gründler F, Franze G, Rosenkranz M, Schmidt H, Kroke E. Syntheses and Molecular Structures of Liquid Pyrophoric Hydridosilanes. ChemistryOpen 2020; 9:762-773. [PMID: 32728519 PMCID: PMC7383127 DOI: 10.1002/open.202000152] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2020] [Revised: 06/04/2020] [Indexed: 11/27/2022] Open
Abstract
Trisilane, isotetrasilane, neopentasilane, and cyclohexasilane have been prepared in gram scale. In-situ cryo crystallization of these pyrophoric liquids in sealed capillaries on the diffractometer allows access to the single crystal structures of these compounds. Structural parameters are discussed and compared to gas-phase electron diffraction structures from literature and with the results from quantum chemical calculations. Significantly higher packing indices are found for the silanes compared to the corresponding alkanes. Radiation with ultraviolet light (365 nm) and parallel ESR (EPR) measurement shows that cyclohexasilane is easily split into radicals, which subsequently leads to the formation of branched and chain-like oligomers. The other compounds form no radicals under these conditions. NMR spectra of all four compounds have been recorded.
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Affiliation(s)
- Maik Gerwig
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Uwe Böhme
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Mike Friebel
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Franziska Gründler
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Georg Franze
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Marco Rosenkranz
- Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Horst Schmidt
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
| | - Edwin Kroke
- Institut für Anorganische Chemie TU Bergakademie Freiberg Leipziger Straße 29 09599 Freiberg Germany
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16
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Shin JC, Kwon SM, Kang J, Jeon SP, Heo JS, Kim YH, Cho SW, Park SK. Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25000-25010. [PMID: 32394695 DOI: 10.1021/acsami.0c04401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO2 (c-TiO2) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO2 films, enabling high-quality c-TiO2 films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO2) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO2 to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (≥300 °C) crystallization of the solution-processed a-TiO2 films and the fabrication of high-performance solution-processed c-TiO2 thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability.
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Affiliation(s)
- Jae Cheol Shin
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sung Min Kwon
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jingu Kang
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Seong Pil Jeon
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jae-Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington, Connecticut 06030, United States
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sung Woon Cho
- Department of Printed Electronics Engineering, Sunchon National University, Sunchon, Jeonnam 57922, Republic of Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
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17
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Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor. COATINGS 2020. [DOI: 10.3390/coatings10030282] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this paper, zirconium–aluminum–oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 °C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 10−6 A/cm2@1MV/cm. Furthermore, the indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm2/Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 106 on/off ratio were achieved at an annealing temperature of 500 °C.
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Park Y, Ahn H, Lee KT, Kim JH, Nam M, Cho J, Han JS, Kim SK, Ko DH. All-solution-processed Si films with broadband and omnidirectional light absorption. NANOTECHNOLOGY 2019; 30:405202. [PMID: 31242465 DOI: 10.1088/1361-6528/ab2d05] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Silicon photonic structures have attracted a great deal of attention due to their potential benefits of efficient light management in optoelectronic applications. In this paper, we demonstrate broadband optical absorption enhancement in solution-processed amorphous silicon (a-Si) by leveraging the advantages of silicon photonic structures. Graded refractive index silicon multi-layer structures are employed by modulating optical constants with simple process optimization, resulting in significantly improved reflectance over a broad range of visible wavelengths. In addition, nanopatterning flexibility of solution-processed silicon provides benefits for tailoring silicon optical properties. With the incorporation of the two-dimensional submicron pattern into silicon films, the absorptivity of silicon films improves considerably below the wavelength of the bandgap (λ ∼ 800 nm), and the limited bandwidth of absorptivity in silicon films can be extended to near-infrared wavelengths by coating with a thin gold layer. The methodology is generally applicable to a platform for improving the broadband optical absorption of photonic and optoelectronic devices.
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Affiliation(s)
- Yongkook Park
- Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 17104, Republic of Korea
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19
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Shou W, Ludwig B, Wang L, Gong X, Yu X, Grigoropoulos CP, Pan H. Feasibility Study of Single-Crystal Si Island Manufacturing by Microscale Printing of Nanoparticles and Laser Crystallization. ACS APPLIED MATERIALS & INTERFACES 2019; 11:34416-34423. [PMID: 31438669 DOI: 10.1021/acsami.9b09577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Nonvacuum printing of single crystals would be ideal for high-performance functional device (such as electronics) fabrication yet challenging for most materials, especially for inorganic semiconductors. Currently, the printed films are dominant in amorphous, polycrystalline, or nanoparticle films. In this article, manufacturing of single-crystal silicon micro/nano-islands is attempted. Different from traditional vapor deposition for silicon thin-film preparation, silicon nanoparticle ink was aerosol-printed followed by confined laser melting and crystallization, allowing potential fabrication of single-crystal silicon micro/nano-islands. It is also shown that as-fabricated Si islands can be transfer-printed onto polymer substrates for potential application of flexible electronics. The additive nature of this technique suggests a scalable and economical approach for high-crystallinity semiconductor printing.
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Affiliation(s)
- Wan Shou
- Department of Mechanical and Aerospace Engineering , Missouri University of Science and Technology , Rolla , Missouri 65409 , United States
| | - Brandon Ludwig
- Department of Mechanical and Aerospace Engineering , Missouri University of Science and Technology , Rolla , Missouri 65409 , United States
| | - Letian Wang
- Laser Thermal Laboratory, Department of Mechanical Engineering , University of California , Berkeley , California 94720-1740 , United States
| | - Xiangtao Gong
- Department of Mechanical and Aerospace Engineering , Missouri University of Science and Technology , Rolla , Missouri 65409 , United States
| | - Xiaowei Yu
- Department of Mechanical and Aerospace Engineering , Missouri University of Science and Technology , Rolla , Missouri 65409 , United States
| | - Costas P Grigoropoulos
- Laser Thermal Laboratory, Department of Mechanical Engineering , University of California , Berkeley , California 94720-1740 , United States
| | - Heng Pan
- Department of Mechanical and Aerospace Engineering , Missouri University of Science and Technology , Rolla , Missouri 65409 , United States
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20
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Christopoulos V, Rotzinger M, Gerwig M, Seidel J, Kroke E, Holthausen M, Wunnicke O, Torvisco A, Fischer R, Haas M, Stueger H. Synthesis and Properties of Branched Hydrogenated Nonasilanes and Decasilanes. Inorg Chem 2019; 58:8820-8828. [PMID: 31198024 DOI: 10.1021/acs.inorgchem.9b01204] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Branched higher silicon hydrides Si nH2 n+2 with n > 6 were recently found to be excellent precursors for the liquid phase deposition of silicon films. Herein we report the gram-scale synthesis of the novel nona- and decasilanes (H3Si)3Si(SiH2) nSi(SiH3)3 (2: n = 1, 5: n = 2) from (H3Si)3SiLi and Cl(SiPh2) nCl by a combined salt elimination/dephenylation/hydrogenation approach. Structure elucidation of the target molecules was performed by NMR spectroscopy and X-ray crystallography. 2 and 5 are nonpyrophoric and exhibit a bathochromically shifted UV absorption compared to neopentasilane and the structurally related octasilane (H3Si)3SiSi(SiH3)3. TG-MS analysis elucidated increased decomposition temperatures and decreased ceramic yields for branched hydrosilanes relative to cyclopentasilane. Otherwise, very similar thermal properties were observed for hydrosilane oligomers with linear and branched structures.
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Affiliation(s)
- Viktor Christopoulos
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
| | - Markus Rotzinger
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
| | | | | | | | | | - Odo Wunnicke
- Evonik Creavis GmbH , Paul-Baumann-Strasse 1 , 45772 Marl , Germany
| | - Ana Torvisco
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
| | - Roland Fischer
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
| | - Michael Haas
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
| | - Harald Stueger
- Institute of Inorganic Chemistry , Graz University of Technology , Stremayrgasse 9 , 8010 Graz , Austria
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Chu Y, Qian C, Chahal P, Cao C. Printed Diodes: Materials Processing, Fabrication, and Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801653. [PMID: 30937260 PMCID: PMC6425440 DOI: 10.1002/advs.201801653] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2018] [Revised: 11/02/2018] [Indexed: 05/24/2023]
Abstract
Printing techniques for the fabrication of diodes have received increasing attention over the last decade due to their great potential as alternatives for high-throughput and cost-effective manufacturing approaches compatible with both flexible and rigid substrates. Here, the progress achieved and the challenges faced in the fabrication of printed diodes are discussed and highlighted, with a focus on the materials of significance (silicon, metal oxides, nanomaterials, and organics), the techniques utilized for ink deposition (gravure printing, screen printing, inkjet printing, aerosol jet printing, etc.), and the process through which the printed layers of diode are sintered after printing. Special attention is also given to the device applications within which the printed diodes have been successfully incorporated, particularly in the fields of rectification, light emission, energy harvesting, and displays. Considering the unmatched production scalability of printed diodes and their intrinsic suitability for flexible and wearable applications, significant improvement in performance and intensive research in development and applications of the printed diodes will continuously progress in the future.
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Affiliation(s)
- Yihang Chu
- Laboratory for Soft Machines & ElectronicsSchool of PackagingMichigan State UniversityEast LansingMI48824USA
- Department of Electrical and Computer EngineeringMichigan State UniversityEast LansingMI48824USA
| | - Chunqi Qian
- Department of Electrical and Computer EngineeringMichigan State UniversityEast LansingMI48824USA
- Department of RadiologyMichigan State UniversityEast LansingMI48824USA
| | - Premjeet Chahal
- Department of Electrical and Computer EngineeringMichigan State UniversityEast LansingMI48824USA
| | - Changyong Cao
- Laboratory for Soft Machines & ElectronicsSchool of PackagingMichigan State UniversityEast LansingMI48824USA
- Department of Electrical and Computer EngineeringMichigan State UniversityEast LansingMI48824USA
- Department of Mechanical EngineeringMichigan State UniversityEast LansingMI48824USA
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22
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Sturm AG, Schweizer JI, Meyer L, Santowski T, Auner N, Holthausen MC. Lewis Base Catalyzed Selective Chlorination of Monosilanes. Chemistry 2018; 24:17796-17801. [DOI: 10.1002/chem.201803921] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2018] [Indexed: 11/10/2022]
Affiliation(s)
- Alexander G. Sturm
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
| | - Julia I. Schweizer
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
| | - Lioba Meyer
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
| | - Tobias Santowski
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
| | - Norbert Auner
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
| | - Max C. Holthausen
- Institut für Anorganische und Analytische Chemie; Goethe-Universität; Max-von-Laue-Straße 7 60438 Frankfurt/Main Germany
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23
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Back S, Kim S, Kwon SG, Park JE, Park SY, Kim JY, Kang B. Silicon Nanocanyon: One-Step Bottom-Up Fabrication of Black Silicon via in-Lasing Hydrophobic Self-Clustering of Silicon Nanocrystals for Sustainable Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36523-36530. [PMID: 30260209 DOI: 10.1021/acsami.8b11483] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report a novel one-step bottom-up fabrication method for multiscale-structured black Si, which is characterized by randomly distributed microscale Si layers covered with sub-100 nm protrusions with submicron boundary grooves. The unique multiscale structure, suggested as a "nanocanyon," effectively minimizes light reflection over a broad spectrum by diversifying the scattering routes from the nanotextured surface to the wide distributed boundary micronanoscale grooves. This structure was achieved by hydrophobic clustering and local aggregation of instantaneously melted Si nanocrystals on a glass substrate under laser irradiation. This method can replace the complicated conventional silicon processes, such as patterning for selective Si formation, texturing for improved absorption, and doping for modifying the electrical properties, because the proposed method obviates the need for photolithography, chemical etching, vacuum processes, and expensive wafers. Finally, black Si photosensor arrays were successfully demonstrated by a low-cost solution process and a laser growth sintering technique for microchannel fabrication. The results show the great potential of the proposed fabrication method for low-cost and sustainable production of highly sensitive optoelectronics and as an alternative to conventional wafer-based photosensor manufacturing techniques.
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Affiliation(s)
- Seunghyun Back
- Department of Mechanical System Engineering , Kumoh National Institute of Technology , Gumi 39177 , Korea
| | - Seongbeom Kim
- Department of Mechanical Design Engineering , Kangwon National University , Samcheok 25913 , Korea
| | - Seung-Gab Kwon
- Department of Mechanical System Engineering , Kumoh National Institute of Technology , Gumi 39177 , Korea
| | - Jong Eun Park
- Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology , Daejeon 34141 , Korea
| | - Song Yi Park
- Department of Energy Engineering, School of Energy and Chemical Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
| | - Jin Young Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
| | - Bongchul Kang
- Department of Mechanical System Engineering , Kumoh National Institute of Technology , Gumi 39177 , Korea
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24
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Han Y, Anderson K, Hobbie EK, Boudjouk P, Kilin DS. Unraveling Photodimerization of Cyclohexasilane from Molecular Dynamics Studies. J Phys Chem Lett 2018; 9:4349-4354. [PMID: 30004709 DOI: 10.1021/acs.jpclett.8b01691] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Photoinduced reactions of a pair of cyclohexasilane (CHS) monomers are explored by time-dependent excited-state molecular dynamics (TDESMD) calculations. In TDESMD trajectories, one observes vivid reaction events including dimerization and fragmentation. A general reaction pathway is identified as (i) ring-opening formation of a dimer, (ii) rearrangement induced by bond breaking, and (iii) decomposition through the elimination of small fragments. The identified pathway supports the chemistry proposed for the fabrication of silicon-based materials using CHS as a precursor. In addition, we find dimers have smaller HOMO-LUMO gaps and exhibit a red shift and line-width broadening in the computed photoluminescence spectra compared with a pair of CHS monomers.
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Affiliation(s)
- Yulun Han
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58102 , United States
| | - Kenneth Anderson
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58102 , United States
| | - Erik K Hobbie
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58102 , United States
| | - Philip Boudjouk
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58102 , United States
| | - Dmitri S Kilin
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58102 , United States
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Yu X, Shou W, Mahajan BK, Huang X, Pan H. Materials, Processes, and Facile Manufacturing for Bioresorbable Electronics: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707624. [PMID: 29736971 DOI: 10.1002/adma.201707624] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2017] [Revised: 02/05/2018] [Indexed: 05/21/2023]
Abstract
Bioresorbable electronics refer to a new class of advanced electronics that can completely dissolve or disintegrate with environmentally and biologically benign byproducts in water and biofluids. They have provided a solution to the growing electronic waste problem with applications in temporary usage of electronics such as implantable devices and environmental sensors. Bioresorbable materials such as biodegradable polymers, dissolvable conductors, semiconductors, and dielectrics are extensively studied, enabling massive progress of bioresorbable electronic devices. Processing and patterning of these materials are predominantly relying on vacuum-based fabrication methods so far. However, for the purpose of commercialization, nonvacuum, low-cost, and facile manufacturing/printing approaches are the need of the hour. Bioresorbable electronic materials are generally more chemically reactive than conventional electronic materials, which require particular attention in developing the low-cost manufacturing processes in ambient environment. This review focuses on material reactivity, ink availability, printability, and process compatibility for facile manufacturing of bioresorbable electronics.
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Affiliation(s)
- Xiaowei Yu
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65401, USA
| | - Wan Shou
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65401, USA
| | - Bikram K Mahajan
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65401, USA
| | - Xian Huang
- Department of Biomedical Engineering, Tianjin University, 92 Weijin Road, Tianjing, 300072, China
| | - Heng Pan
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65401, USA
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26
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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27
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Garlapati SK, Marques GC, Gebauer JS, Dehm S, Bruns M, Winterer M, Tahoori MB, Aghassi-Hagmann J, Hahn H, Dasgupta S. High performance printed oxide field-effect transistors processed using photonic curing. NANOTECHNOLOGY 2018; 29:235205. [PMID: 29553481 DOI: 10.1088/1361-6528/aab7a2] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany
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28
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29
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Pokhodnya K, Anderson K, Kilina S, Dandu N, Boudjouk P. Mechanism of Charged, Neutral, Mono-, and Polyatomic Donor Ligand Coordination to Perchlorinated Cyclohexasilane (Si 6Cl 12). J Phys Chem A 2018; 122:4067-4075. [PMID: 29589757 DOI: 10.1021/acs.jpca.7b11052] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We report the detailed computational study of several perchlorinated cyclohexasilane (Si6Cl12)-based inverse sandwich compounds. It was found that regardless of the donor ligand size and charge, for example, Cl- and CN- anions or neutral HCN and NCPh nitriles, their coordination to the puckered Si6Cl12 ring results in its flattening. The NBO and CDA studies of the complexes showed that coordination occurs due to hybridization of low-lying antibonding σ*(Si-Cl) and σ*(Si-Si) unoccupied molecular orbitals (UMOs) of Si6Cl12 and occupied molecular orbitals (OMOs) of donor molecules (predominantly lone-pair-related), resulting in donor-to-ring charge transfer accompanied by complex stabilization and ring flattening. It is known that the Si6 ring distortion results from vibronic coupling of OMO and UMO pairs (pseudo-Jahn-Teller effect, PJT). Consequently, the Si6 ring flattening most probably occurs due to suppression of the PJT effect in all of the studied compounds. In this paper, the stabilization energy E(2) associated with donor-acceptor charge transfer (delocalization) was estimated using NBO analysis for [Si6Cl12·2Cl]2-, [Si6Cl12·2(NC)]2-, Si6Cl12·2(NCH), and Si6Cl12·2(NCPh). It was found that the polarizability of the donor might significantly affect the stabilization energy value (Cl- > CN- > HCN). For the neutral complexes, the E(2) value is correlated with the charge on the nitrogen atoms. All of these factors, that is, specific donor E(2) value, charge transfer, complex MO energy diagrams, and so on, should be taken into account when choosing the ligands suitable for forming Si-based 1D compounds and other nanoscale materials.
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Affiliation(s)
- Konstantin Pokhodnya
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58108 , United States
| | - Kenneth Anderson
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58108 , United States
| | - Svetlana Kilina
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58108 , United States
| | - Naveen Dandu
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58108 , United States
| | - Philip Boudjouk
- Department of Chemistry and Biochemistry , North Dakota State University , Fargo , North Dakota 58108 , United States
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Hongo K, Maezono R. A Computational Scheme To Evaluate Hamaker Constants of Molecules with Practical Size and Anisotropy. J Chem Theory Comput 2017; 13:5217-5230. [PMID: 28981266 DOI: 10.1021/acs.jctc.6b01159] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We propose a computational scheme to evaluate Hamaker constants, A, of molecules with practical sizes and anisotropies. Upon the increasing feasibility of diffusion Monte Carlo (DMC) methods to evaluate binding curves for such molecules to extract the constants, we discussed how to treat the averaging over anisotropy and how to correct the bias due to the nonadditivity. We have developed a computational procedure for dealing with the anisotropy and reducing statistical errors and biases in DMC evaluations, based on possible validations on predicted A. We applied the scheme to cyclohexasilane molecule, Si6H12, used in "printed electronics" fabrications, getting A ≈ 105 ± 2 zJ, being in plausible range supported even by other possible extrapolations. The scheme provided here would open a way to use handy ab initio evaluations to predict wettabilities as in the form of materials informatics over broader molecules.
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Affiliation(s)
- Kenta Hongo
- Research Center for Advanced Computing Infrastructure, JAIST , Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan.,Center for Materials Research by Information Integration, Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science , Tsukuba 305-0047, Japan.,PRESTO, Japan Science and Technology Agency (JST) , Kawaguchi, Saitama 332-0012, Japan
| | - Ryo Maezono
- School of Information Science, JAIST , Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan
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Haas M, Christopoulos V, Radebner J, Holthausen M, Lainer T, Schuh L, Fitzek H, Kothleitner G, Torvisco A, Fischer R, Wunnicke O, Stueger H. Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition. Angew Chem Int Ed Engl 2017; 56:14071-14074. [PMID: 28977723 DOI: 10.1002/anie.201707525] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2017] [Indexed: 11/09/2022]
Abstract
Herein a convenient synthetic method to obtain 2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasilane 4 on a multigram scale is presented. Proton-coupled 29 Si NMR spectroscopy and single-crystal X-ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid-phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a-Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.
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Affiliation(s)
- Michael Haas
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Viktor Christopoulos
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Judith Radebner
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | | | - Thomas Lainer
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Lukas Schuh
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Harald Fitzek
- Institute of Electron Microscopy and Nanoanalysis, Technische Universität Graz, Steyrergasse 17, 8010, Graz, Austria
| | - Gerald Kothleitner
- Institute of Electron Microscopy and Nanoanalysis, Technische Universität Graz, Steyrergasse 17, 8010, Graz, Austria
| | - Ana Torvisco
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Roland Fischer
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
| | - Odo Wunnicke
- Evonik Creavis GmbH, Paul-Baumann-Strasse 1, 45772, Marl, Germany
| | - Harald Stueger
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, 8010, Graz, Austria
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32
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Haas M, Christopoulos V, Radebner J, Holthausen M, Lainer T, Schuh L, Fitzek H, Kothleitner G, Torvisco A, Fischer R, Wunnicke O, Stueger H. Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition. Angew Chem Int Ed Engl 2017. [DOI: 10.1002/ange.201707525] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Michael Haas
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Viktor Christopoulos
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Judith Radebner
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | | | - Thomas Lainer
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Lukas Schuh
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Harald Fitzek
- Institute of Electron Microscopy and Nanoanalysis; Technische Universität Graz; Steyrergasse 17 8010 Graz Austria
| | - Gerald Kothleitner
- Institute of Electron Microscopy and Nanoanalysis; Technische Universität Graz; Steyrergasse 17 8010 Graz Austria
| | - Ana Torvisco
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Roland Fischer
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
| | - Odo Wunnicke
- Evonik Creavis GmbH; Paul-Baumann-Strasse 1 45772 Marl Germany
| | - Harald Stueger
- Institute of Inorganic Chemistry; Technische Universität Graz; Stremayrgasse 9/IV 8010 Graz Austria
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33
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Na JW, Rim YS, Kim HJ, Lee JH, Hong S, Kim HJ. Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. ACS APPLIED MATERIALS & INTERFACES 2017; 9:29849-29856. [PMID: 28812360 DOI: 10.1021/acsami.7b06643] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.
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Affiliation(s)
- Jae Won Na
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
| | - You Seung Rim
- School of Intelligent Mechatronic Engineering, Sejong University , 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Hee Jun Kim
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
| | - Jin Hyeok Lee
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
| | - Seonghwan Hong
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
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Sberna PM, Trifunovic M, Ishihara R. Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes. ACS SUSTAINABLE CHEMISTRY & ENGINEERING 2017; 5:5642-5645. [PMID: 28706758 PMCID: PMC5503179 DOI: 10.1021/acssuschemeng.7b00626] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2017] [Revised: 06/02/2017] [Indexed: 06/07/2023]
Abstract
Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
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Affiliation(s)
- Paolo M. Sberna
- Quantum
Engineering Department, Delft University
of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands
| | - Miki Trifunovic
- QuTech, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands
| | - Ryoichi Ishihara
- QuTech
and Kavli Institute of Nanoscience, Delft
University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands
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35
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Pokhodnya K, Anderson K, Kilina S, Boudjouk P. Toward the Mechanism of Perchlorinated Cyclopentasilane (Si 5Cl 10) Ring Flattening in the [Si 5Cl 10·2Cl] 2- Dianion. J Phys Chem A 2017; 121:3494-3500. [PMID: 28406632 DOI: 10.1021/acs.jpca.6b12938] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
We report the detailed computational study of flattening of the puckered Si5 ring by suppression of the pseudo-Jahn-Teller (PJT) effect through coordination of two Cl- anions to the molecule forming an inverse sandwich dianion [Si5Cl10·2Cl]2- complex. The PJT effect that causes nonplanarity of the Si5Cl10 structure (Cs) results from vibronic coupling of pairs of occupied molecular orbitals (OMOs) and unoccupied molecular orbitals (UMOs). It was shown that filling the intervenient molecular orbitals of puckered Si5Cl10 with valent electron pairs of Cl- donors suppresses the PJT effect, with the Si5 ring becoming planar (D5h) upon complex formation. In this paper, the stabilization energy E(2) associated with donor-acceptor charge transfer (delocalization) was estimated using NBO analysis for all studied inverse sandwich compounds [Si5Cl10·2X]2- (where X = F, Cl, Br). It was found that the polarizability of the donor ion might significantly affect the stabilization energy value and should be taken into account when choosing the ligands suitable for forming Si-based one-dimensional compounds and other nanoscale materials.
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Affiliation(s)
- Konstantin Pokhodnya
- Department of Chemistry and Biochemistry, North Dakota State University , Fargo, North Dakota 58108, United States
| | - Kenneth Anderson
- Department of Chemistry and Biochemistry, North Dakota State University , Fargo, North Dakota 58108, United States
| | - Svetlana Kilina
- Department of Chemistry and Biochemistry, North Dakota State University , Fargo, North Dakota 58108, United States
| | - Philip Boudjouk
- Department of Chemistry and Biochemistry, North Dakota State University , Fargo, North Dakota 58108, United States
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36
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Xu Q, Zhao J, Pecunia V, Xu W, Zhou C, Dou J, Gu W, Lin J, Mo L, Zhao Y, Cui Z. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters. ACS APPLIED MATERIALS & INTERFACES 2017; 9:12750-12758. [PMID: 28337913 DOI: 10.1021/acsami.7b01666] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 106, effective mobility up to 30 cm2 V-1 s-1, small hysteresis, and small subthreshold swing (90-140 mV dec-1), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 Vdd = 1 V) and a voltage gain as high as 30 (at Vdd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at Vdd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.
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Affiliation(s)
- Qiqi Xu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
- Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences , Shanghai 200032, P.R. China
- School of Physical Science and Technology, ShanghaiTech University , Shanghai 201210, P.R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Vincenzo Pecunia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, P.R. China
| | - Wenya Xu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Chunshan Zhou
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Junyan Dou
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Weibing Gu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Jian Lin
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Lixin Mo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication , No.1 Xinghua Street, Daxing District, Beijing 102600, P.R. China
| | - Yanfei Zhao
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
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37
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Cádiz Bedini AP, Muthmann S, Allgaier J, Bittkau K, Finger F, Carius R. Liquid hydridosilane precursor prepared from cyclopentasilane via sonication at low temperatures without the action of light. ULTRASONICS SONOCHEMISTRY 2017; 34:289-293. [PMID: 27773248 DOI: 10.1016/j.ultsonch.2016.05.039] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2015] [Revised: 05/24/2016] [Accepted: 05/25/2016] [Indexed: 06/06/2023]
Abstract
We report on a liquid hydridosilane precursor ink prepared via the ultrasonically induced ring-opening polymerisation of cyclopentasilane (Si5H10) without irradiation by ultraviolet light. The sonication is carried out in N2 atmosphere at temperatures between 20 and 75°C. We use size exclusion chromatography (SEC) to show polymer growth and estimate molecular mass with increasing sonication time. In combination with UV-vis transmission measurements, further SEC analysis is used to compare solutions subjected to either purely thermal or ultrasonic treatment at the same process temperature and for the same duration. Our findings provide strong evidence showing that the initiation of the polymerisation is sonocatalytic in nature and not thermic due to the macroscopic temperature of the solution. The liquid precursor is used to produce homogeneous hydrogenated amorphous silicon (a-Si:H) thin films via spin coating and pyrolytic conversion. The optoelectronic properties of the films are subsequently improved by hydrogen radical treatment. Fourier transform infrared spectroscopy (FTIR) is used to determine a compact film morphology and electrical conductivity measurements show that the layers attain a light-to-dark photosensitivity ratio of 2×103 making them suitable for application in optoelectronic devices.
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Affiliation(s)
- A P Cádiz Bedini
- IEK-5, Photovoltaics, Forschungszentrum Jülich GmbH, Jülich, Germany.
| | - S Muthmann
- IEK-5, Photovoltaics, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - J Allgaier
- JCNS-1, Jülich Centre for Neutron Science, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - K Bittkau
- IEK-5, Photovoltaics, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - F Finger
- IEK-5, Photovoltaics, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - R Carius
- IEK-5, Photovoltaics, Forschungszentrum Jülich GmbH, Jülich, Germany
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38
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Silicon deposition in nanopores using a liquid precursor. Sci Rep 2016; 6:37689. [PMID: 27874085 PMCID: PMC5118725 DOI: 10.1038/srep37689] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2016] [Accepted: 11/01/2016] [Indexed: 11/08/2022] Open
Abstract
Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.
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39
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Hada M, Shioya N, Shimoaka T, Eda K, Hada M, Hasegawa T. Comprehensive Understanding of Structure-Controlling Factors of a Zinc Tetraphenylporphyrin Thin Film Using pMAIRS and GIXD Techniques. Chemistry 2016; 22:16539-16546. [DOI: 10.1002/chem.201603291] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2016] [Indexed: 11/08/2022]
Affiliation(s)
- Miyako Hada
- Laboratory of Solution and Interface Chemistry; Division of Environmental Chemistry; Institute for Chemical Research, Kyoto University, Gokasho, Uji; Kyoto 611-0011 Japan
| | - Nobutaka Shioya
- Laboratory of Solution and Interface Chemistry; Division of Environmental Chemistry; Institute for Chemical Research, Kyoto University, Gokasho, Uji; Kyoto 611-0011 Japan
| | - Takafumi Shimoaka
- Laboratory of Solution and Interface Chemistry; Division of Environmental Chemistry; Institute for Chemical Research, Kyoto University, Gokasho, Uji; Kyoto 611-0011 Japan
| | - Kazuo Eda
- Department of Chemistry; Graduate school of Science; Kobe University, 1-1 Rokko-dai, Nada-ku, Kobe; Hyogo 657-8501 Japan
| | - Masahiko Hada
- Department of Chemistry; Division of Science and Engineering; Tokyo Metropolitan University; 1-1 Minami-Osawa, Hachioji Tokyo 192-0397 Japan
| | - Takeshi Hasegawa
- Laboratory of Solution and Interface Chemistry; Division of Environmental Chemistry; Institute for Chemical Research, Kyoto University, Gokasho, Uji; Kyoto 611-0011 Japan
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40
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Yano K, Tatsuda N, Masuda T, Shimoda T. Novel method to incorporate Si into monodispersed mesoporous carbon spheres. J Colloid Interface Sci 2016; 479:20-24. [DOI: 10.1016/j.jcis.2016.06.028] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2016] [Accepted: 06/09/2016] [Indexed: 11/25/2022]
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41
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Tarczay G, Förstel M, Maksyutenko P, Kaiser RI. Formation of Higher Silanes in Low-Temperature Silane (SiH4) Ices. Inorg Chem 2016; 55:8776-85. [PMID: 27513820 DOI: 10.1021/acs.inorgchem.6b01327] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A novel approach for the synthesis and identification of higher silanes (SinH2n+2, where n ≤ 19) is presented. Thin films of (d4-)silane deposited onto a cold surface were exposed under ultra-high-vacuum conditions to energetic electrons and sampled on line and in situ via infrared and ultraviolet-visible spectroscopy. Gas phase products released by fractional sublimation in the warm-up phase after the irradiation were probed via a reflectron time-of-flight mass spectrometer coupled with a tunable vacuum ultraviolet photon ionization source. The formation mechanisms of (higher) silanes were investigated by irradiating codeposited 1:1 silane (SiH4)/d4-silane (SiD4) ices, suggesting that both radical-radical recombination and radical insertion pathways contribute to the formation of disilane along with higher silanes up to nonadecasilane (Si19H40).
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Affiliation(s)
- György Tarczay
- Department of Chemistry and W. M. Keck Research Laboratory in Astrochemistry, University of Hawaii at Manoa , Honolulu, Hawaii 96822, United States
| | - Marko Förstel
- Department of Chemistry and W. M. Keck Research Laboratory in Astrochemistry, University of Hawaii at Manoa , Honolulu, Hawaii 96822, United States
| | - Pavlo Maksyutenko
- Department of Chemistry and W. M. Keck Research Laboratory in Astrochemistry, University of Hawaii at Manoa , Honolulu, Hawaii 96822, United States
| | - Ralf I Kaiser
- Department of Chemistry and W. M. Keck Research Laboratory in Astrochemistry, University of Hawaii at Manoa , Honolulu, Hawaii 96822, United States
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42
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Bonaccorso F, Bartolotta A, Coleman JN, Backes C. 2D-Crystal-Based Functional Inks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:6136-66. [PMID: 27273554 DOI: 10.1002/adma.201506410] [Citation(s) in RCA: 167] [Impact Index Per Article: 20.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2015] [Revised: 03/09/2016] [Indexed: 05/19/2023]
Abstract
The possibility to produce and process graphene, related 2D crystals, and heterostructures in the liquid phase makes them promising materials for an ever-growing class of applications as composite materials, sensors, in flexible optoelectronics, and energy storage and conversion. In particular, the ability to formulate functional inks with on-demand rheological and morphological properties, i.e., lateral size and thickness of the dispersed 2D crystals, is a step forward toward the development of industrial-scale, reliable, inexpensive printing/coating processes, a boost for the full exploitation of such nanomaterials. Here, the exfoliation strategies of graphite and other layered crystals are reviewed, along with the advances in the sorting of lateral size and thickness of the exfoliated sheets together with the formulation of functional inks and the current development of printing/coating processes of interest for the realization of 2D-crystal-based devices.
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Affiliation(s)
- Francesco Bonaccorso
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, Genova, 16163, Italy
| | - Antonino Bartolotta
- CNR-IPCF, Istituto per i Processi Chimico-Fisici, Via F. Stagno D'Alcontres 37, Messina, 98158, Italy
| | - Jonathan N Coleman
- School of Physics and CRANN, Trinity College Dublin, Pearse St, Dublin 2, Ireland
| | - Claudia Backes
- Applied Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, Heidelberg, 69120, Germany
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43
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Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose. Sci Rep 2016; 6:28921. [PMID: 27357006 PMCID: PMC4928109 DOI: 10.1038/srep28921] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2016] [Accepted: 06/13/2016] [Indexed: 11/08/2022] Open
Abstract
Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm(2), a current rectification ratio up to 4 × 10(3) between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.
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Cádiz Bedini AP, Muthmann S, Flohre J, Thiele B, Willbold S, Carius R. Sonophotolytically Synthesized Silicon Nanoparticle-Polymer Composite Ink from a Commercially Available Lower Silane. MACROMOL CHEM PHYS 2016. [DOI: 10.1002/macp.201600005] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Andrew P. Cádiz Bedini
- IEK-5: Photovoltaics; Forschungszentrum Jülich GmbH; Wilhelm-Johnen-Str. 52425 Jülich Germany
| | - Stefan Muthmann
- IEK-5: Photovoltaics; Forschungszentrum Jülich GmbH; Wilhelm-Johnen-Str. 52425 Jülich Germany
| | - Jan Flohre
- IEK-5: Photovoltaics; Forschungszentrum Jülich GmbH; Wilhelm-Johnen-Str. 52425 Jülich Germany
| | - Björn Thiele
- Forschungszentrum Jülich GmbH; IBG-2: Institute of Plant Sciences/BioSpec; Wilhelm-Johnen-Str. 52425 Jülich Germany
| | - Sabine Willbold
- Forschungszentrum Jülich GmbH; ZEA-3: Central Institute for Engineering; Electronics and Analytics; Wilhelm-Johnen-Str. 52425 Jülich Germany
| | - Reinhard Carius
- IEK-5: Photovoltaics; Forschungszentrum Jülich GmbH; Wilhelm-Johnen-Str. 52425 Jülich Germany
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Masuda T, Takagishi H, Yamazaki K, Shimoda T. Direct Imprinting of Liquid Silicon. ACS APPLIED MATERIALS & INTERFACES 2016; 8:9969-9976. [PMID: 27028558 DOI: 10.1021/acsami.6b01617] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
A polymeric precursor solution for semiconducting silicon called "liquid silicon" was synthesized and directly imprinted to form well-defined and fine amorphous silicon patterns. The spin-coated film was cured and imprinted followed by annealing at 380 °C to complete the polymer-to-silicon conversion. A pattern with dimensions of several hundreds of nanometers or less was obtained on a substrate. We demonstrated that the curing step before imprinting is particularly important in the imprinting process. A curing temperature of 140-180 °C was found to be optimal in terms of the film's deformability and molding properties. Fourier transform infrared spectroscopy and thermal analysis clarified that the cross-linking of the polymer due to the 1,2-hydrogen shift reaction was induced exponentially with the release of a large amount of SiH4/H2 gases at temperatures between 140 and 220 °C, leading to the solidification of the film. Consequently, the film completely lost its deformability at higher temperatures. Despite a volume shrinkage as large as 53-56% during the polymer-to-silicon conversion, well-defined angular patterns were preserved. Fine silicon patterns were formed via the direct imprinting of liquid silicon with high resolution and high throughput, demonstrating the usefulness of this technique for the future manufacturing of silicon electronics.
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Affiliation(s)
- Takashi Masuda
- School of Materials Science, Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Hideyuki Takagishi
- Faculty of Symbiotic System Science, Fukushima University , 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296, Japan
| | - Ken Yamazaki
- School of Materials Science, Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Tatsuya Shimoda
- School of Materials Science, Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Abstract
This Review article deals with the synthesis and properties of inorganic hydrocarbon analogues: binary chemical species that contain heavier Group 14 elements (Si, Ge, Sn or Pb) and hydrogen as components. Rapid advances in our general knowledge of these species have enabled the development of industrially relevant processes such as the hydrosilylation of unsaturated substrates and the chemical vapor deposition of semi-conducting films.
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Affiliation(s)
- Eric Rivard
- Department of Chemistry
- University of Alberta
- Edmonton
- Canada
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Tillmann J, Moxter M, Bolte M, Lerner HW, Wagner M. Lewis acidity of Si6Cl12 and its role as convenient SiCl2 source. Inorg Chem 2015; 54:9611-8. [PMID: 26378930 DOI: 10.1021/acs.inorgchem.5b01703] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The free cyclohexasilane Si6Cl12 (1) was obtained in 66% yield from the corresponding Cl(-) diadduct [nBu4N]2[1·2Cl] and AlCl3 in C6H6. The substituted cyclohexasilane 1,1-(Cl3Si)2Si6Cl10 (2), however, cannot be liberated from [nBu4N]2[2·2Cl] under comparable reaction conditions. Instead, a mixture of several products was obtained, from which the oligosilane Si19Cl36 (3) crystallized in low yields. X-ray crystallography revealed 3 to consist of two Si5 rings, bridged by one silicon atom. Compound 1 possesses Lewis acidic sites above and below the ring centroid. Competition experiments reveal that their corresponding acid strengths are comparable to that of BCl3. The reaction of 1 with 6 equiv of 1,3-bis(2,6-diisopropylphenyl)imidazol-2-ylidene (Idipp) leads to a complete breakdown of the cyclic scaffold and furnishes the dichlorosilylene adduct Idipp-SiCl2.
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Affiliation(s)
- Jan Tillmann
- Institut für Anorganische Chemie, Goethe-Universität Frankfurt am Main , Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Maximilian Moxter
- Institut für Anorganische Chemie, Goethe-Universität Frankfurt am Main , Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Michael Bolte
- Institut für Anorganische Chemie, Goethe-Universität Frankfurt am Main , Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Hans-Wolfram Lerner
- Institut für Anorganische Chemie, Goethe-Universität Frankfurt am Main , Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Matthias Wagner
- Institut für Anorganische Chemie, Goethe-Universität Frankfurt am Main , Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
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Jiang C, Hsieh YT, Zhao H, Zhou H, Yang Y. Controlling Solid–Gas Reactions at Nanoscale for Enhanced Thin Film Morphologies and Device Performances in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells. J Am Chem Soc 2015; 137:11069-75. [DOI: 10.1021/jacs.5b05819] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Chengyang Jiang
- Department
of Materials Science and Engineering and ‡California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Yao-Tsung Hsieh
- Department
of Materials Science and Engineering and ‡California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Hongxiang Zhao
- Department
of Materials Science and Engineering and ‡California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Huanping Zhou
- Department
of Materials Science and Engineering and ‡California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Yang Yang
- Department
of Materials Science and Engineering and ‡California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
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Dolzhnikov DS, Zhang H, Jang J, Son JS, Panthani MG, Shibata T, Chattopadhyay S, Talapin DV. Composition-matched molecular "solders" for semiconductors. Science 2015; 347:425-8. [DOI: 10.1126/science.1260501] [Citation(s) in RCA: 155] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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Shen Z, Masuda T, Takagishi H, Ohdaira K, Shimoda T. Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates. Chem Commun (Camb) 2015; 51:4417-20. [DOI: 10.1039/c4cc09026h] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.
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Affiliation(s)
- Zhongrong Shen
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Takashi Masuda
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Hideyuki Takagishi
- Japan Science and Technology Agency
- ERATO
- Shimoda Nano-Liquid Process Project
- Ishikawa 923-1292
- Japan
| | - Keisuke Ohdaira
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Tatsuya Shimoda
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
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