Solution-processed silicon films and transistors

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.

Suppression of the Coffee Ring Effect in a Single Solvent-Based Silicon Nanoparticle Ink

Silicon (Si) is made printable by dispersing Si nanoparticles in a single organic solvent. Viscoelastic properties of the prepared inks as well as the uniformity of inkjet-printed thin films are investigated in dependence on the Si volume fraction. It has been demonstrated that no ink additives are needed to completely suppress the occurrence of the coffee ring effect. This is obtained by increasing the ink's volume fraction to induce gelation in order to generate elasticity. The printability of our inks is investigated in terms of Weber, Reynolds, and Ohnesorge numbers and found to be maintained even at high particle loads due to shear-thinning viscosity behavior. When printed onto tungsten (W) substrates, Si inks with ϕ(Si) = 0.4% and ϕ(Si) = 2.1% leave a ring stain after drying, whereas coffee rings are absent for inks with ϕ(Si) = 3.0% and above. The reason for this is a significant ink elasticity achieved by the buildup of a gel network for higher particle loads, which leads to thixotropy-like properties. These are low viscosity for printability and elevated elasticity during ink drying, made possible by a breakup of the gel network during drop formation in conjunction with a rapid network reformation after deposition.

Fabrication of Amorphous Silicon-Carbon Hybrid Films Using Single-Source Precursors

The aim of this study was the preparation of different amorphous silicon-carbon hybrid thin-layer materials according to the liquid phase deposition (LPD) process using single-source precursors. In our study, 2-methyl-2-silyltrisilane (methylisotetrasilane; 2), 1,1,1-trimethyl-2,2-disilyltrisilane (trimethylsilylisotetrasilane; 3), 2-phenyl-2-silyltrisilane (phenylisotetrasilane; 4), and 1,1,2,2,4,4,5,5-octamethyl-3,3,6,6-tetrasilylcyclohexasilane (cyclohexasilane; 5) were utilized as precursor materials and compared with the parent compound 2,2-disilyltrisilane (neopentasilane; 1). Compounds 2-5 were successfully oligomerized at λ = 365 nm with catalytic amounts of the neopentasilane oligomer (NPO). These oligomeric mixtures (NPO and 6-9) were used for the preparation of thin-layer materials. Optimum solution and spin coating conditions were investigated, and amorphous silicon-carbon films were obtained. All thin-layer materials were characterized via UV/vis spectroscopy, light microscopy, spectroscopic ellipsometry, XPS, SEM, and SEM/EDX. Our results show that the carbon content and especially the bandgap can be easily tuned using these single-source precursors via LPD.

Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor

Phthalocyanine-based organic thin-film transistors (OTFTs) have been demonstrated as sensors for a range of analytes, including cannabinoids, in both liquid and gas phases. Detection of the primary cannabinoids, Δ⁹-tetrahydrocannabinol (THC) and cannabidiol (CBD), is necessary for quality control and regulation, however, current techniques are often not readily available for consumers, industry, and law-enforcement. The OTFT characteristics, X-ray diffraction (XRD) spectra, and grazing incident wide angle x-ray scattering (GIWAXS) spectra of two copper and three zinc phthalocyanines, with varying degrees of peripheral fluorination, were screened to determine sensitivity to THC vapor. Unsubstituted ZnPc was found to be the most sensitive material and, by tuning thin-film morphology, crystal polymorphs, and thickness through altered physical vapor deposition conditions, we increased the sensitivity to THC by 100x. Here we demonstrate that deposition conditions, and the resulting physical film characteristics, play a significant role in device sensitization.

Molecular Main Group Metal Hydrides

This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.

Storing and Reading Information in Mixtures of Fluorescent Molecules

The rapidly increasing use of digital technologies requires the rethinking of methods to store data. This work shows that digital data can be stored in mixtures of fluorescent dye molecules, which are deposited on a surface by inkjet printing, where an amide bond tethers the dye molecules to the surface. A microscope equipped with a multichannel fluorescence detector distinguishes individual dyes in the mixture. The presence or absence of these molecules in the mixture encodes binary information (i.e., "0" or "1"). The use of mixtures of molecules, instead of sequence-defined macromolecules, minimizes the time and difficulty of synthesis and eliminates the requirement of sequencing. We have written, stored, and read a total of approximately 400 kilobits (both text and images) with greater than 99% recovery of information, written at an average rate of 128 bits/s (16 bytes/s) and read at a rate of 469 bits/s (58.6 bytes/s).

Molecular Silicon Clusters

The continuously decreasing size of device features in microelectronics draws growing attention to the structuring of silicon at the molecular level with powerful tools provided by synthetic chemistry. Silicon clusters are of particular importance in this regard not only as potential precursors for silicon deposition but also as well-defined model systems for bulk and surfaces of silicon at the nanoscale as well as possible starting points for future construction of molecularly precise device structures. This review aims to give a comprehensive overview about the state of the art in the synthesis of molecular silicon clusters, which are grouped into (1) electron-precise saturated clusters, (2) soluble polyhedral Zintl anions, and (3) unsaturated silicon clusters, the so-called siliconoids. Particular attention is paid to functionalization as it is generally considered a necessary prerequisite for the design and construction of more extended systems. The interrelations between the three different classes of molecular silicon clusters, e.g., arising from the introduction of negatively charged functional groups, are highlighted on grounds of NMR properties and computed electronic structures.

Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes

Solid Si (wafer) and gaseous Si (silane) are generally used as starting materials for fabricating Si devices. In this study, a liquid precursor (liquid-phase hydrosilane) for semiconducting Si, called liquid Si (liq-Si), was synthesized to establish a liquid pathway for fabricating Si. Although the liquid-to-solid Si conversion can be induced by heating at 400 °C, conversion without heating was realized herein by electron-beam (EB) irradiation. This study is the first to irradiate liq-Si with EB. Size-controllable Si nanodots, with diameters of the order of 100 nm, were directly deposited at any point by liquid-phase electron-beam-induced deposition (LP-EBID) with a beam diameter of 50 nm. This approach yielded less-contaminated deposits at the detection limit of energy-dispersive x-ray spectroscopy, as opposed to typical EBID, wherein carbon impurities up to 90% are found. The processing resolution of LP-EBID is potentially 1 nm or less. Therefore, this non-heating deposition technique realizes the direct writing of Si nanostructures and would be a powerful tool for Si nanofabrication.

A thermolytic route to a polysilyne

We report a safe and convenient method to prepare a new class of network polysilane, or polysilyne ([RSi]_n). Simple thermolysis of a readily accessible linear poly(phenylsilane), [PhSiH]_n, affords polysilyne [PhSi]_n with concomitant evolution of monosilanes. This new polymer shows a hyperbranched structure with unique features not observed in known polysilynes prepared via hazardous Wurtz coupling routes. Despite these differences, our soluble, yellow polysilyne exhibits some important properties associated with the traditional random network structure: it absorbs up to 400 nm in the UV spectrum, yet is stable to photolysis under inert atmosphere. This efficient new synthetic route opens the door to exciting applications for these hyperbranched polymers in materials and device technologies.

Recent advances in bioelectronics chemistry

Research in bioelectronics is highly interdisciplinary, with many new developments being based on techniques from across the physical and life sciences. Advances in our understanding of the fundamental chemistry underlying the materials used in bioelectronic applications have been a crucial component of many recent discoveries. In this review, we highlight ways in which a chemistry-oriented perspective may facilitate novel and deep insights into both the fundamental scientific understanding and the design of materials, which can in turn tune the functionality and biocompatibility of bioelectronic devices. We provide an in-depth examination of several developments in the field, organized by the chemical properties of the materials. We conclude by surveying how some of the latest major topics of chemical research may be further integrated with bioelectronics.

Inkjet Printing of Liquid Silicon

A precursor solution for semiconducting Si called liquid Si (liq-Si) is synthesized, and semiconducting Si is inkjet-printed. Satisfactory inkjet discharge is achieved using liq-Si consisting of liquid-phase polysilane with an average molecular weight of 2500 g mol^-1 . The printed liq-Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root-mean-square roughness of 0.8 nm. These results are extended to n- and p-type Si films by synthesizing liq-Si chemically doped with P and B compounds, respectively. Liq-Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.

Syntheses and Molecular Structures of Liquid Pyrophoric Hydridosilanes

Trisilane, isotetrasilane, neopentasilane, and cyclohexasilane have been prepared in gram scale. In-situ cryo crystallization of these pyrophoric liquids in sealed capillaries on the diffractometer allows access to the single crystal structures of these compounds. Structural parameters are discussed and compared to gas-phase electron diffraction structures from literature and with the results from quantum chemical calculations. Significantly higher packing indices are found for the silanes compared to the corresponding alkanes. Radiation with ultraviolet light (365 nm) and parallel ESR (EPR) measurement shows that cyclohexasilane is easily split into radicals, which subsequently leads to the formation of branched and chain-like oligomers. The other compounds form no radicals under these conditions. NMR spectra of all four compounds have been recorded.

Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors

As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO₂ (c-TiO₂) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO₂ films, enabling high-quality c-TiO₂ films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO₂) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO₂ to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (≥300 °C) crystallization of the solution-processed a-TiO₂ films and the fabrication of high-performance solution-processed c-TiO₂ thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability.

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

In this paper, zirconium–aluminum–oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 °C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 10−6 A/cm2@1MV/cm. Furthermore, the indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm2/Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 106 on/off ratio were achieved at an annealing temperature of 500 °C.

All-solution-processed Si films with broadband and omnidirectional light absorption

Silicon photonic structures have attracted a great deal of attention due to their potential benefits of efficient light management in optoelectronic applications. In this paper, we demonstrate broadband optical absorption enhancement in solution-processed amorphous silicon (a-Si) by leveraging the advantages of silicon photonic structures. Graded refractive index silicon multi-layer structures are employed by modulating optical constants with simple process optimization, resulting in significantly improved reflectance over a broad range of visible wavelengths. In addition, nanopatterning flexibility of solution-processed silicon provides benefits for tailoring silicon optical properties. With the incorporation of the two-dimensional submicron pattern into silicon films, the absorptivity of silicon films improves considerably below the wavelength of the bandgap (λ ∼ 800 nm), and the limited bandwidth of absorptivity in silicon films can be extended to near-infrared wavelengths by coating with a thin gold layer. The methodology is generally applicable to a platform for improving the broadband optical absorption of photonic and optoelectronic devices.

Feasibility Study of Single-Crystal Si Island Manufacturing by Microscale Printing of Nanoparticles and Laser Crystallization

Nonvacuum printing of single crystals would be ideal for high-performance functional device (such as electronics) fabrication yet challenging for most materials, especially for inorganic semiconductors. Currently, the printed films are dominant in amorphous, polycrystalline, or nanoparticle films. In this article, manufacturing of single-crystal silicon micro/nano-islands is attempted. Different from traditional vapor deposition for silicon thin-film preparation, silicon nanoparticle ink was aerosol-printed followed by confined laser melting and crystallization, allowing potential fabrication of single-crystal silicon micro/nano-islands. It is also shown that as-fabricated Si islands can be transfer-printed onto polymer substrates for potential application of flexible electronics. The additive nature of this technique suggests a scalable and economical approach for high-crystallinity semiconductor printing.

Synthesis and Properties of Branched Hydrogenated Nonasilanes and Decasilanes

Branched higher silicon hydrides Si _nH_{2 n+2} with n > 6 were recently found to be excellent precursors for the liquid phase deposition of silicon films. Herein we report the gram-scale synthesis of the novel nona- and decasilanes (H₃Si)₃Si(SiH₂) _nSi(SiH₃)₃ (2: n = 1, 5: n = 2) from (H₃Si)₃SiLi and Cl(SiPh₂) _nCl by a combined salt elimination/dephenylation/hydrogenation approach. Structure elucidation of the target molecules was performed by NMR spectroscopy and X-ray crystallography. 2 and 5 are nonpyrophoric and exhibit a bathochromically shifted UV absorption compared to neopentasilane and the structurally related octasilane (H₃Si)₃SiSi(SiH₃)₃. TG-MS analysis elucidated increased decomposition temperatures and decreased ceramic yields for branched hydrosilanes relative to cyclopentasilane. Otherwise, very similar thermal properties were observed for hydrosilane oligomers with linear and branched structures.

Printed Diodes: Materials Processing, Fabrication, and Applications

Printing techniques for the fabrication of diodes have received increasing attention over the last decade due to their great potential as alternatives for high-throughput and cost-effective manufacturing approaches compatible with both flexible and rigid substrates. Here, the progress achieved and the challenges faced in the fabrication of printed diodes are discussed and highlighted, with a focus on the materials of significance (silicon, metal oxides, nanomaterials, and organics), the techniques utilized for ink deposition (gravure printing, screen printing, inkjet printing, aerosol jet printing, etc.), and the process through which the printed layers of diode are sintered after printing. Special attention is also given to the device applications within which the printed diodes have been successfully incorporated, particularly in the fields of rectification, light emission, energy harvesting, and displays. Considering the unmatched production scalability of printed diodes and their intrinsic suitability for flexible and wearable applications, significant improvement in performance and intensive research in development and applications of the printed diodes will continuously progress in the future.

Silicon Nanocanyon: One-Step Bottom-Up Fabrication of Black Silicon via in-Lasing Hydrophobic Self-Clustering of Silicon Nanocrystals for Sustainable Optoelectronics

We report a novel one-step bottom-up fabrication method for multiscale-structured black Si, which is characterized by randomly distributed microscale Si layers covered with sub-100 nm protrusions with submicron boundary grooves. The unique multiscale structure, suggested as a "nanocanyon," effectively minimizes light reflection over a broad spectrum by diversifying the scattering routes from the nanotextured surface to the wide distributed boundary micronanoscale grooves. This structure was achieved by hydrophobic clustering and local aggregation of instantaneously melted Si nanocrystals on a glass substrate under laser irradiation. This method can replace the complicated conventional silicon processes, such as patterning for selective Si formation, texturing for improved absorption, and doping for modifying the electrical properties, because the proposed method obviates the need for photolithography, chemical etching, vacuum processes, and expensive wafers. Finally, black Si photosensor arrays were successfully demonstrated by a low-cost solution process and a laser growth sintering technique for microchannel fabrication. The results show the great potential of the proposed fabrication method for low-cost and sustainable production of highly sensitive optoelectronics and as an alternative to conventional wafer-based photosensor manufacturing techniques.

Unraveling Photodimerization of Cyclohexasilane from Molecular Dynamics Studies

Photoinduced reactions of a pair of cyclohexasilane (CHS) monomers are explored by time-dependent excited-state molecular dynamics (TDESMD) calculations. In TDESMD trajectories, one observes vivid reaction events including dimerization and fragmentation. A general reaction pathway is identified as (i) ring-opening formation of a dimer, (ii) rearrangement induced by bond breaking, and (iii) decomposition through the elimination of small fragments. The identified pathway supports the chemistry proposed for the fabrication of silicon-based materials using CHS as a precursor. In addition, we find dimers have smaller HOMO-LUMO gaps and exhibit a red shift and line-width broadening in the computed photoluminescence spectra compared with a pair of CHS monomers.

Materials, Processes, and Facile Manufacturing for Bioresorbable Electronics: A Review

Bioresorbable electronics refer to a new class of advanced electronics that can completely dissolve or disintegrate with environmentally and biologically benign byproducts in water and biofluids. They have provided a solution to the growing electronic waste problem with applications in temporary usage of electronics such as implantable devices and environmental sensors. Bioresorbable materials such as biodegradable polymers, dissolvable conductors, semiconductors, and dielectrics are extensively studied, enabling massive progress of bioresorbable electronic devices. Processing and patterning of these materials are predominantly relying on vacuum-based fabrication methods so far. However, for the purpose of commercialization, nonvacuum, low-cost, and facile manufacturing/printing approaches are the need of the hour. Bioresorbable electronic materials are generally more chemically reactive than conventional electronic materials, which require particular attention in developing the low-cost manufacturing processes in ambient environment. This review focuses on material reactivity, ink availability, printability, and process compatibility for facile manufacturing of bioresorbable electronics.

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.

High performance printed oxide field-effect transistors processed using photonic curing

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In₂O₃ field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Mechanism of Charged, Neutral, Mono-, and Polyatomic Donor Ligand Coordination to Perchlorinated Cyclohexasilane (Si6Cl12)

We report the detailed computational study of several perchlorinated cyclohexasilane (Si₆Cl₁₂)-based inverse sandwich compounds. It was found that regardless of the donor ligand size and charge, for example, Cl^- and CN^- anions or neutral HCN and NCPh nitriles, their coordination to the puckered Si₆Cl₁₂ ring results in its flattening. The NBO and CDA studies of the complexes showed that coordination occurs due to hybridization of low-lying antibonding σ*(Si-Cl) and σ*(Si-Si) unoccupied molecular orbitals (UMOs) of Si₆Cl₁₂ and occupied molecular orbitals (OMOs) of donor molecules (predominantly lone-pair-related), resulting in donor-to-ring charge transfer accompanied by complex stabilization and ring flattening. It is known that the Si₆ ring distortion results from vibronic coupling of OMO and UMO pairs (pseudo-Jahn-Teller effect, PJT). Consequently, the Si₆ ring flattening most probably occurs due to suppression of the PJT effect in all of the studied compounds. In this paper, the stabilization energy E(2) associated with donor-acceptor charge transfer (delocalization) was estimated using NBO analysis for [Si₆Cl₁₂·2Cl]^2-, [Si₆Cl₁₂·2(NC)]^2-, Si₆Cl₁₂·2(NCH), and Si₆Cl₁₂·2(NCPh). It was found that the polarizability of the donor might significantly affect the stabilization energy value (Cl^- > CN^- > HCN). For the neutral complexes, the E(2) value is correlated with the charge on the nitrogen atoms. All of these factors, that is, specific donor E(2) value, charge transfer, complex MO energy diagrams, and so on, should be taken into account when choosing the ligands suitable for forming Si-based 1D compounds and other nanoscale materials.

A Computational Scheme To Evaluate Hamaker Constants of Molecules with Practical Size and Anisotropy

We propose a computational scheme to evaluate Hamaker constants, A, of molecules with practical sizes and anisotropies. Upon the increasing feasibility of diffusion Monte Carlo (DMC) methods to evaluate binding curves for such molecules to extract the constants, we discussed how to treat the averaging over anisotropy and how to correct the bias due to the nonadditivity. We have developed a computational procedure for dealing with the anisotropy and reducing statistical errors and biases in DMC evaluations, based on possible validations on predicted A. We applied the scheme to cyclohexasilane molecule, Si₆H₁₂, used in "printed electronics" fabrications, getting A ≈ 105 ± 2 zJ, being in plausible range supported even by other possible extrapolations. The scheme provided here would open a way to use handy ab initio evaluations to predict wettabilities as in the form of materials informatics over broader molecules.

Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

Herein a convenient synthetic method to obtain 2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasilane 4 on a multigram scale is presented. Proton-coupled ²⁹ Si NMR spectroscopy and single-crystal X-ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid-phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a-Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO₂) dielectric layer are in contact and thermally processed, a Si⁴⁺ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm² V^-1 s^-1 and a on/off current ratio over 10⁷ is successfully demonstrated.

Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm²/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.

Toward the Mechanism of Perchlorinated Cyclopentasilane (Si5Cl10) Ring Flattening in the [Si5Cl10·2Cl]2- Dianion

We report the detailed computational study of flattening of the puckered Si₅ ring by suppression of the pseudo-Jahn-Teller (PJT) effect through coordination of two Cl^- anions to the molecule forming an inverse sandwich dianion [Si₅Cl₁₀·2Cl]^2- complex. The PJT effect that causes nonplanarity of the Si₅Cl₁₀ structure (C_s) results from vibronic coupling of pairs of occupied molecular orbitals (OMOs) and unoccupied molecular orbitals (UMOs). It was shown that filling the intervenient molecular orbitals of puckered Si₅Cl₁₀ with valent electron pairs of Cl^- donors suppresses the PJT effect, with the Si₅ ring becoming planar (D_5h) upon complex formation. In this paper, the stabilization energy E(2) associated with donor-acceptor charge transfer (delocalization) was estimated using NBO analysis for all studied inverse sandwich compounds [Si₅Cl₁₀·2X]^2- (where X = F, Cl, Br). It was found that the polarizability of the donor ion might significantly affect the stabilization energy value and should be taken into account when choosing the ligands suitable for forming Si-based one-dimensional compounds and other nanoscale materials.

Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters

The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 10⁶, effective mobility up to 30 cm² V^-1 s^-1, small hysteresis, and small subthreshold swing (90-140 mV dec^-1), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V_dd = 1 V) and a voltage gain as high as 30 (at V_dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at V_dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.

Liquid hydridosilane precursor prepared from cyclopentasilane via sonication at low temperatures without the action of light

We report on a liquid hydridosilane precursor ink prepared via the ultrasonically induced ring-opening polymerisation of cyclopentasilane (Si₅H₁₀) without irradiation by ultraviolet light. The sonication is carried out in N₂ atmosphere at temperatures between 20 and 75°C. We use size exclusion chromatography (SEC) to show polymer growth and estimate molecular mass with increasing sonication time. In combination with UV-vis transmission measurements, further SEC analysis is used to compare solutions subjected to either purely thermal or ultrasonic treatment at the same process temperature and for the same duration. Our findings provide strong evidence showing that the initiation of the polymerisation is sonocatalytic in nature and not thermic due to the macroscopic temperature of the solution. The liquid precursor is used to produce homogeneous hydrogenated amorphous silicon (a-Si:H) thin films via spin coating and pyrolytic conversion. The optoelectronic properties of the films are subsequently improved by hydrogen radical treatment. Fourier transform infrared spectroscopy (FTIR) is used to determine a compact film morphology and electrical conductivity measurements show that the layers attain a light-to-dark photosensitivity ratio of 2×10³ making them suitable for application in optoelectronic devices.

Silicon deposition in nanopores using a liquid precursor

Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

Formation of Higher Silanes in Low-Temperature Silane (SiH4) Ices

A novel approach for the synthesis and identification of higher silanes (SinH2n+2, where n ≤ 19) is presented. Thin films of (d4-)silane deposited onto a cold surface were exposed under ultra-high-vacuum conditions to energetic electrons and sampled on line and in situ via infrared and ultraviolet-visible spectroscopy. Gas phase products released by fractional sublimation in the warm-up phase after the irradiation were probed via a reflectron time-of-flight mass spectrometer coupled with a tunable vacuum ultraviolet photon ionization source. The formation mechanisms of (higher) silanes were investigated by irradiating codeposited 1:1 silane (SiH4)/d4-silane (SiD4) ices, suggesting that both radical-radical recombination and radical insertion pathways contribute to the formation of disilane along with higher silanes up to nonadecasilane (Si19H40).

2D-Crystal-Based Functional Inks

The possibility to produce and process graphene, related 2D crystals, and heterostructures in the liquid phase makes them promising materials for an ever-growing class of applications as composite materials, sensors, in flexible optoelectronics, and energy storage and conversion. In particular, the ability to formulate functional inks with on-demand rheological and morphological properties, i.e., lateral size and thickness of the dispersed 2D crystals, is a step forward toward the development of industrial-scale, reliable, inexpensive printing/coating processes, a boost for the full exploitation of such nanomaterials. Here, the exfoliation strategies of graphite and other layered crystals are reviewed, along with the advances in the sorting of lateral size and thickness of the exfoliated sheets together with the formulation of functional inks and the current development of printing/coating processes of interest for the realization of 2D-crystal-based devices.

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm(2), a current rectification ratio up to 4 × 10(3) between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Direct Imprinting of Liquid Silicon

A polymeric precursor solution for semiconducting silicon called "liquid silicon" was synthesized and directly imprinted to form well-defined and fine amorphous silicon patterns. The spin-coated film was cured and imprinted followed by annealing at 380 °C to complete the polymer-to-silicon conversion. A pattern with dimensions of several hundreds of nanometers or less was obtained on a substrate. We demonstrated that the curing step before imprinting is particularly important in the imprinting process. A curing temperature of 140-180 °C was found to be optimal in terms of the film's deformability and molding properties. Fourier transform infrared spectroscopy and thermal analysis clarified that the cross-linking of the polymer due to the 1,2-hydrogen shift reaction was induced exponentially with the release of a large amount of SiH4/H2 gases at temperatures between 140 and 220 °C, leading to the solidification of the film. Consequently, the film completely lost its deformability at higher temperatures. Despite a volume shrinkage as large as 53-56% during the polymer-to-silicon conversion, well-defined angular patterns were preserved. Fine silicon patterns were formed via the direct imprinting of liquid silicon with high resolution and high throughput, demonstrating the usefulness of this technique for the future manufacturing of silicon electronics.

Group 14 inorganic hydrocarbon analogues

This Review article deals with the synthesis and properties of inorganic hydrocarbon analogues: binary chemical species that contain heavier Group 14 elements (Si, Ge, Sn or Pb) and hydrogen as components. Rapid advances in our general knowledge of these species have enabled the development of industrially relevant processes such as the hydrosilylation of unsaturated substrates and the chemical vapor deposition of semi-conducting films.

Lewis acidity of Si6Cl12 and its role as convenient SiCl2 source

The free cyclohexasilane Si6Cl12 (1) was obtained in 66% yield from the corresponding Cl(-) diadduct [nBu4N]2[1·2Cl] and AlCl3 in C6H6. The substituted cyclohexasilane 1,1-(Cl3Si)2Si6Cl10 (2), however, cannot be liberated from [nBu4N]2[2·2Cl] under comparable reaction conditions. Instead, a mixture of several products was obtained, from which the oligosilane Si19Cl36 (3) crystallized in low yields. X-ray crystallography revealed 3 to consist of two Si5 rings, bridged by one silicon atom. Compound 1 possesses Lewis acidic sites above and below the ring centroid. Competition experiments reveal that their corresponding acid strengths are comparable to that of BCl3. The reaction of 1 with 6 equiv of 1,3-bis(2,6-diisopropylphenyl)imidazol-2-ylidene (Idipp) leads to a complete breakdown of the cyclic scaffold and furnishes the dichlorosilylene adduct Idipp-SiCl2.

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.