Exciton localization in solution-processed organolead trihalide perovskites

Blue Perovskite Lasing Derived from Bound Excitons through Defect Engineering

All-inorganic perovskite films have emerged as promising candidates for laser gain materials owing to their outstanding optoelectronic properties and straightforward solution processing. However, the performance of blue perovskite lasing still lags far behind due to the inevitable high density of defects. Herein, we demonstrate that defects can be utilized instead of passivated/removed to form bound excitons to achieve excellent blue stimulated emission in perovskite films. Such a strategy emphasizes defect engineering by introducing a deep-level defect in mixed-Rb/Cs perovskite films through octylammonium bromide (OABr) additives. Consequently, the OA-Rb/Cs perovskite films exhibit blue amplified spontaneous emission (ASE) from defect-related bound excitons with a low threshold (13.5 μJ/cm2) and a high optical gain (744.7 cm-1), which contribute to a vertical-cavity surface-emitting laser with single-mode blue emission at 482 nm. This work not only presents a facile method for creating blue laser gain materials but also provides valuable insights for further exploration of high-performance blue lasing in perovskite films.

Excited-State Dynamics of MAPbBr3: Coexistence of Excitons and Free Charge Carriers at Ultrafast Times

Methylammonium lead tribromide perovskite (MAPbBr3) is an important material, for example, for light-emitting applications and tandem solar cells. The relevant photophysical properties are governed by a plethora of phenomena resulting from the complex and relatively poorly understood interplay of excitons and free charge carriers in the excited state. In this study, we combine transient spectroscopies in the visible and terahertz range to investigate the presence and evolution of excitons and free charge carriers at ultrafast times upon excitation at various photon energies and densities. For above- and resonant band-gap excitation, we find that free charges and excitons coexist and that both are mainly promptly generated within our 50-100 fs experimental time resolution. However, the exciton-to-free charge ratio increases upon decreasing the phonon energy toward resonant band gap excitation. The free charge signatures dominate the transient absorption response for above-band-gap excitation and low excitation densities, masking the excitonic features. With resonant band gap excitation and low excitation densities, we find that although the exciton density increases, free charges remain. We show evidence that the excitons localize into shallow trap and/or Urbach tail states to form localized excitons (within tens of picoseconds) that subsequently get detrapped. Using high excitation densities, we demonstrate that many-body interactions become pronounced and effects such as the Moss-Burstein shift, band gap renormalization, excitonic repulsion, and the formation of Mahan excitons are evident. The coexistence of excitons and free charges that we demonstrate here for photoexcited MAPbBr3 at ultrafast time scales confirms the high potential of the material for both light-emitting diode and tandem solar cell applications.

Dynamic Structural Evolution and Dual Emission Behavior in Hybrid Organic Lead Bromide Perovskites

The optoelectronic properties of organic lead halide perovskites (OLHPs) strongly depend on their underlying crystal symmetry and dynamics. Here, we exploit temperature-dependent synchrotron powder X-ray diffraction and temperature-dependent photoluminescence to investigate how the subtle structural changes happening in the pure and mixed A-site cation MA1-xFAxPbBr3 (x = 0, 0.5, and 1) systems influences their optoelectronic properties. Diffraction investigations reveal a cubic structure at high temperatures and tetragonal and orthorhombic structures with octahedral distortion at low temperatures. Steady state photoluminescence and time correlated single photon counting study reveals that the dual emission behavior of these OLHPs is due to the direct-indirect band formation. In the orthorhombic phase of MAPbBr3, the indirect band is dominated by self-trapped exciton (STE) emission due to the higher-order lattice distortions of PbBr6 octahedra. Our findings provide a comprehensive explanation of the dual emission behavior of OLHPs while also providing a rationale for previous experimental observations.

Boosting exciton mobility approaching Mott-Ioffe-Regel limit in Ruddlesden-Popper perovskites by anchoring the organic cation

Exciton transport in two-dimensional Ruddlesden-Popper perovskite plays a pivotal role for their optoelectronic performance. However, a clear photophysical picture of exciton transport is still lacking due to strong confinement effects and intricate exciton-phonon interactions in an organic-inorganic hybrid lattice. Herein, we present a systematical study on exciton transport in (BA)2(MA)n-1PbnI3n+1 Ruddlesden-Popper perovskites using time-resolved photoluminescence microscopy. We reveal that the free exciton mobilities in exfoliated thin flakes can be improved from around 8 cm2 V-1 s-1 to 280 cm2V-1s-1 by anchoring the soft butyl ammonium cation with a polymethyl methacrylate network at the surface. The mobility of the latter is close to the theoretical limit of Mott-Ioffe-Regel criterion. Combining optical measurements and theoretical studies, it is unveiled that the polymethyl methacrylate network significantly improve the lattice rigidity resulting in the decrease of deformation potential scattering and lattice fluctuation at the surface few layers. Our work elucidates the origin of high exciton mobility in Ruddlesden-Popper perovskites and opens up avenues to regulate exciton transport in two-dimensional materials.

Dopant effect on the optical and thermal properties of the 2D organic-inorganic hybrid perovskite (HDA)2PbBr4

Lead-based two-dimensional organic-inorganic hybrid perovskites (2D HOIPs) are popular materials with various optical properties, which can be tuned through metal ion doping. Due to the size and valence misfit, metal ion dopants in 2D lead-based HOIPs are still limited. In this work, Mn2+, Sb3+ and Bi3+ are doped into 2D (HDA)2PbBr4 (HDA = protonated dopamine) successfully. As a result, the dopants in 2D (HDA)2PbBr4 can induce their characteristic optical spectra, which is studied at different temperatures and excitation powers. The temperature-dependent energy transfer in the Mn-doped sample has been clarified, in which abnormal phenomena including negative thermal quenching have been observed. In addition, the dopant ions can impact the phase transition temperatures of the samples, especially lowering their crystallization temperatures greatly. The mussel-inspired organic cation, feasible metal ion regulation, and superior stability provide (HDA)2PbBr4 potential for further applications.

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.

Ultraviolet-Visible-Short-Wavelength Infrared Broadband and Fast-Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Perovskite-based photodetectors exhibit potential applications in communication, neuromorphic chips, and biomedical imaging due to their outstanding photoelectric properties and facile manufacturability. However, few of perovskite-based photodetectors focus on ultraviolet-visible-short-wavelength infrared (UV-Vis-SWIR) broadband photodetection because of the relatively large bandgap. Moreover, such broadband photodetectors with individual nanocrystal channel featuring monolithic integration with functional electronic/optical components have hardly been explored. Herein, an individual monocrystalline MAPbBr3 nanoplate-based photodetector is demonstrated that simultaneously achieves efficient UV-Vis-SWIR detection and fast-response. Nanoplate photodetectors (NPDs) are prepared by assembling single nanoplate on adjacent gold electrodes. NPDs exhibit high external quantum efficiency (EQE) and detectivity of 1200% and 5.37 × 1012 Jones, as well as fast response with rise time of 80 µs. Notably, NPDs simultaneously achieve high EQE and fast response, exceeding most perovskite devices with multi-nanocrystal channel. Benefiting from the high specific surface area of nanoplate with surface-trap-assisted absorption, NPDs achieve high performance in the near-infrared and SWIR spectral region of 850-1450 nm. Unencapsulated devices show outstanding UV-laser-irradiation endurance and decent periodicity and repeatability after 29-day-storage in atmospheric environment. Finally, imaging applications are demonstrated. This work verifies the potential of perovskite-based broadband photodetection, and stimulates the monolithic integration of various perovskite-based devices.

Low-Temperature Emission Dynamics of Methylammonium Lead Bromide Hybrid Perovskite Thin Films at the Sub-Micrometer Scale

We study the low-temperature (T = 4.7 K) emission dynamics of a thin film of methylammonium lead bromide (MAPbBr3), prepared via the anti-solvent method. Using intensity-dependent (over 5 decades) hyperspectral microscopy under quasi-resonant (532 nm) continuous wave excitation, we revealed spatial inhomogeneities in the thin film emission. This was drastically different at the band-edge (∼550 nm, sharp peaks) than in the emission tail (∼568 nm, continuum of emission). We are able to observe regions of the film at the micrometer scale where emission is dominated by excitons, in between regions of trap emission. Varying the density of absorbed photons by the MAPbBr3 thin films, two-color fluorescence lifetime imaging microscopy unraveled the emission dynamics: a fast, resolution-limited (∼200 ps) monoexponential tangled with a stretched exponential decay. We associate the first to the relaxation of excitons and the latter to trap emission dynamics. The obtained stretching exponents can be interpreted as the result of a two-dimensional electron diffusion process: Förster resonant transfer mechanism. Furthermore, the non-vanishing fast monoexponential component even in the tail of the MAPbBr3 emission indicates the subsistence of localized excitons. Finally, we estimate the density of traps in MAPbBr3 thin films prepared using the anti-solvent method at n∼1017 cm-3.

Ultralong Carrier Lifetime Exceeding 20 µs in Lead Halide Perovskite Film Enable Efficient Solar Cells

The carrier lifetime is one of the key parameters for perovskite solar cells (PSCs). However, it is still a great challenge to achieve long carrier lifetimes in perovskite films that are comparable with perovskite crystals owning to the large trap density resulting from the unavoidable defects in grain boundaries and surfaces. Here, by regulating the electronic structure with the developed 2-thiopheneformamidinium bromide (ThFABr) combined with the unique film structure of 2D perovskite layer caped 2D/3D polycrystalline perovskite film, an ultralong carrier lifetime exceeding 20 µs and carrier diffusion lengths longer than 6.5 µm are achieved. These excellent properties enable the ThFA-based devices to yield a champion efficiency of 24.69% with a minimum VOC loss of 0.33 V. The unencapsulated device retains ≈95% of its initial efficiency after 1180 h by max power point (MPP) tracking under continuous light illumination. This work provides important implications for structured 2D/(2D/3D) perovskite films combined with unique FA-based spacers to achieve ultralong carrier lifetime for high-performance PSCs and other optoelectronic applications.

A study on theoretical models for investigating time-resolved photoluminescence in halide perovskites

Time-resolved photoluminescence (TRPL) is an effective experimental technique to study charge carrier dynamic processes in halide perovskites on different time scales. In the past decade, several models have been proposed and employed to study the TRPL curves in halide perovskites, but there is still a lack of systematic summarization and comparative discussion. Here, we reviewed the widely employed exponential models to fit the TRPL curves, and focused on the physical meaning of the extracted carrier lifetimes, as well as the existing debates on the definition of the average lifetime. Emphasis was placed on the importance of the diffusion process in the carrier dynamics, especially for the halide perovskite thin films having transport layers. The solving of the diffusion equation, using both analytical and numerical methods, was then introduced to fit the TRPL curves. Furthermore, the newly proposed global fit and direct measurement of radiative decay rates were discussed.

Vacancy-Mediated Anomalous Emission Characteristics of Size-Confined Semiconducting CoTe2

Transition-metal tellurides (TMTs) are promising materials for "post-graphene age" nanoelectronics and energy storage applications owing to their industry-standard compatibility, high electron mobility, large spin-orbit coupling (SOC), etc. However, tellurium (Te) having a larger ionic radius (Z = 52) and broader d-bands endows TMTs with semimetallic nature, restricting their application in photonic and optoelectronic domains. In this work, we report the optical properties of the quantum-confined semiconducting phase of cobalt ditelluride (CoTe₂) for the first time, exhibiting excellent two-color band photoabsorption attributes covering the UV-visible and near-infrared regions. Furthermore, novel excitonic resonances (X) of size-varying CoTe₂ nanocrystals and quantum dots (QDs) are indicated by their temperature-dependent emission characteristics, which are attributed to the splitting of band edge states via confinement. On the other hand, the sudden rupture of the large-area CoTe₂ nanosheets via ultrasonication incorporates Co vacancy-mediated localized trap states within the band gap, which is attributed to the superior room-temperature photoluminescence (PL) quantum yield of QDs and further corroborated using Raman analysis and atomistic density functional theory (DFT) simulations. Most interestingly, the excitonic peak of CoTe₂ QDs reveals a unique positive-to-negative thermal quenching transition phenomenon, owing to the thermal activation of nonradiative surface trap states. These results introduce an exciting approach for the defect-mediated color-saturated light emission that paves the way for solution-processed telluride-based QD light-emitting diodes.

Vacuum-Vapor-Deposited 0D/3D All-Inorganic Perovskite Composite Films toward Low-Threshold Amplified Spontaneous Emission and Lasing

Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO₂ substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm^-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr₃ phase enabled by the incorporation of the 0D Cs₄ PbBr₆ phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm^-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.

Exciton dynamics and photoresponse behavior of thein situannealed CsSnBr3perovskite films synthesized by thermal evaporation

The CsSnBr₃photodetectors are fabricated by thermal evaporation and 75 °Cin situannealing, and the effect ofin situannealing on the morphology, structure, exciton dynamics and photoresponse of thermally evaporated CsSnBr₃films are investigated. Especially, temperature dependent steady-state photoluminescence (PL) and transient PL decaying have been analyzed in details for understanding the exciton dynamics. Meanwhile, effect of annealing on the activation energy for trap sites (E_a), exciton binding energy (E_b), activation energy for interfacial trapped carriers (ΔE), trap densities and carriers mobilities are studied and the annealed (A-CsSnBr₃) reveals obviously lowerE_band trap density together with notably higher carrier mobility than those of the unannealed (UA-CsSnBr₃). Temperature dependence of the integrated PL intensity can be ascribed to the combining effect of the exciton dissociation, exciton quenching through trap sites and thermal activation of trapped carriers. The temperature dependent transient PL decaying analysis indicates that the PL decaying mechanism at low and high temperature is totally different from that in intermediate temperature range, in which combing effect of free exciton and localized state exciton decaying prevail. The beneficial effects of thein situannealing on the photoresponse performance of the CsSnBr₃films can be demonstrated by the remarkable enhancement of the optimal responsivity (R) afterin situannealing which increases from less than 1 A W^-1to 1350 A W^-1as well as dramatically improved noise equivalent power, specific detectivityD* and Gain (G).

High Power Irradiance Dependence of Charge Species Dynamics in Hybrid Perovskites and Kinetic Evidence for Transient Vibrational Stark Effect in Formamidinium

Hybrid halide perovskites materials have the potential for both photovoltaic and light-emitting devices. Relatively little has been reported on the kinetics of charge relaxation upon intense excitation. In order to evaluate the illumination power density dependence on the charge recombination mechanism, we have applied a femtosecond transient mid-IR absorption spectroscopy with strong excitation to directly measure the charge kinetics via electron absorption. The irradiance-dependent relaxation processes of the excited, photo-generated charge pairs were quantified in polycrystalline MAPbI₃, MAPbBr₃, and (FAPbI₃)_0.97(MAPbBr₃)_0.03 thin films that contain either methylamonium (MA) or formamidinium (FA). This report identifies the laser-generated charge species and provides the kinetics of Auger, bimolecular and excitonic decay components. The inter-band electron-hole (bimolecular) recombination was found to dominate over Auger recombination at very high pump irradiances, up to the damage threshold. The kinetic analysis further provides direct evidence for the carrier field origin of the vibrational Stark effect in a formamidinium containing perovskite material. The results suggest that radiative excitonic and bimolecular recombination in MAPbI₃ at high excitation densities could support light-emitting applications.

Localized Excitonic Electroluminescence from Carbon Nanodots

Localized excitons are expected to achieve high-performance electroluminescence and have been widely investigated in GaN-based light-emitting diodes (LEDs). Although carbon nanodot (CD) based LEDs have been achieved with the radiative recombination of electrons and holes, localized excitonic electroluminescence has been not reported before. In this Letter, localized excitonic electroluminescent devices have been fabricated using fluorescent CDs as an active layer. The CDs show strong localized excitonic yellow emission with a fluorescence quantum yield of 76% and Stokes shift of 2.1 eV. The CD-based LEDs present a sub-bandgap turn-on voltage of 2.4 V and a maximum luminance of 60.2 cd m^-2, which is the lowest driving voltage among the CD-based electroluminescent devices. Localized centers trap carriers effectively, resulting in sub-bandgap light emission. The current results manifest that localized excitons may furnish a promising approach to boost the development of CD-based LEDs.

Regulation of the luminescence mechanism of two-dimensional tin halide perovskites

Two-dimensional (2D) Sn-based perovskites are a kind of non-toxic environment-friendly luminescent material. However, the research on the luminescence mechanism of this type of perovskite is still very controversial, which greatly limits the further improvement and application of the luminescence performance. At present, the focus of controversy is defects and phonon scattering rates. In this work, we combine the organic cation control engineering with temperature-dependent transient absorption spectroscopy to systematically study the interband exciton relaxation pathways in layered A2SnI4 (A = PEA+, BA+, HA+, and OA+) structures. It is revealed that exciton-phonon scattering and exciton-defect scattering have different effects on exciton relaxation. Our study further confirms that the deformation potential scattering by charged defects, not by the non-polar optical phonons, dominates the excitons interband relaxation, which is largely different from the Pb-based perovskites. These results enhance the understanding of the origin of the non-radiative pathway in Sn-based perovskite materials.

Light Emission Properties of Thermally Evaporated CH3NH3PbBr3 Perovskite from Nano- to Macro-Scale: Role of Free and Localized Excitons

Over the past decade, interest about metal halide perovskites has rapidly increased, as they can find wide application in optoelectronic devices. Nevertheless, although thermal evaporation is crucial for the development and engineering of such devices based on multilayer structures, the optical properties of thermally deposited perovskite layers (spontaneous and amplified spontaneous emission) have been poorly investigated. This paper is a study from a nano- to micro- and macro-scale about the role of light-emitting species (namely free carriers and excitons) and trap states in the spontaneous emission of thermally evaporated thin layers of CH₃NH₃PbBr₃ perovskite after wet air UV light trap passivation. The map of light emission from grains, carried out by SNOM at the nanoscale and by micro-PL techniques, clearly indicates that free and localized excitons (EXs) are the dominant light-emitting species, the localized excitons being the dominant ones in the presence of crystallites. These species also have a key role in the amplified spontaneous emission (ASE) process: for higher excitation densities, the relative contribution of localized EXs basically remains constant, while a clear competition between ASE and free EXs spontaneous emission is present, which suggests that ASE is due to stimulated emission from the free EXs.

One- and Two-Photon Excited Photoluminescence and Suppression of Thermal Quenching of CsSnBr3 Microsquare and Micropyramid

Thermal photoluminescence (PL) quenching is fundamentally important for perovskite optoelectronic applications. Herein, we investigated PL characteristics of CsSnBr₃ microsquares and micropyramids synthesized by chemical vapor deposition (CVD) and their PL quenching behavior at high temperature. These microstructures have favorable PL performances in ambient atmosphere. Under two-photon excitation, we observed whispering gallery modes (WGMs) in microsquares and amplified spontaneous emission (ASE) in micropyramids. Reversible PL losses due to thermal effect were observed for both samples. Monotonic blue shifts in PL emission upon temperature increase suggest a band gap widening associated with an emphanisis effect. Temperature-dependent spectral line width analysis reveals that a line width broadening is attributed to the dominant electron-longitudinal optical phonon interaction. The estimated activation energy of thermally assisted nonradiative recombination for CsSnBr₃ microsquares and micropyramids is over 310 meV by the Arrhenius equation, which is higher than CsPbBr₃. These results prove that CsSnBr₃ exhibits better thermal stability than Pb-based perovskites.

Ionic liquid-induced in situ deposition of perovskite quantum dot films with a photoluminescence quantum yield of over 85

Metal halide perovskite quantum dots (QDs) hold great promise as building blocks for next-generation light emitting devices (LEDs). The preparation of perovskite QD films with high photoluminescence quantum yield (PLQY) is the key to realizing efficient LEDs. However, the conventional deposition method of spin-coating of pre-synthesized QD ink solutions results in perovskite QD films with low PLQY (typically <45%) due to non-radiative recombination centers induced in the deposition process. Here, by utilizing the ionic nature and steric hindrance effect of the ionic liquid, we demonstrate an in situ deposition method for perovskite QD films with high PLQY by directly spin-coating precursor solutions containing an ionic liquid. Furthermore, mechanistic study reveals that the ionic liquid not only induces the formation of QDs but also suppresses defect-related recombination through the interaction with uncoordinated metal atoms on the surface of the QDs. As a result, the in situ deposited CsPbBr₃ QD film with a PLQY as high as 85.2% and long-term air stability is achieved. These findings demonstrate that the introduction of an ionic liquid provides an effective strategy to enhance the performance of in situ formed perovskite QD films, which could benefit the development of efficient LEDs and other optoelectronic devices.

Unusual Temperature Dependence of Bandgap in 2D Inorganic Lead-Halide Perovskite Nanoplatelets

Understanding the origin of temperature-dependent bandgap in inorganic lead-halide perovskites is essential and important for their applications in photovoltaics and optoelectronics. Herein, it is found that the temperature dependence of bandgap in CsPbBr3 perovskites is variable with material dimensionality. In contrast to the monotonous redshift ordinarily observed in bulk-like CsPbBr3 nanocrystals (NCs), the bandgap of 2D CsPbBr3 nanoplatelets (NPLs) exhibits an initial blueshift then redshift trend with decreasing temperature (290-10 K). The Bose-Einstein two-oscillator modeling manifests that the blueshift-redshift crossover of bandgap in the NPLs is attributed to the significantly larger weight of contribution from electron-optical phonon interaction to the bandgap renormalization in the NPLs than in the NCs. These new findings may gain deep insights into the origin of bandgap shift with temperature for both fundamentals and applications of perovskite semiconductor materials.

Mixed Halide Perovskite Films by Vapor Anion Exchange for Spectrally Stable Blue Stimulated Emission

Solution-processed all-inorganic CsPbX₃ perovskites exhibit outstanding optoelectronic properties and are being considered as a promising optical gain medium, with impressive performance in the green and red region. However, the development of CsPbX₃ for blue emission is still lagging far behind, owing to difficulties in thin films synthesis and spectral instability subject to light irradiation. Here, a facile vapor anion exchange (VAE) method that enables preparation of blue-emitting perovskite films with both excellent surface morphology and good photo-stability is reported. The mixed-Br/Cl quasi-2D perovskite films show spectrally stable pure blue emission (471 nm) under continuous-wave laser irradiation with power density as high as 81 W cm^-2 . Furthermore, optically pumped blue amplified spontaneous emission (ASE) is realized based on the mixed-Br/Cl perovskite films. By changing the duration of VAE treatment, the ASE peak can be tuned from 537 nm down to 475 nm. This work not only presents a facile method to prepare high quality mixed halide Cs-based perovskite films, but also pave the way for further exploration of stable blue perovskite lasing.

Long-Range Interfacial Charge Carrier Trapping in Halide Perovskite-C60 and Halide Perovskite-TiO2 Donor-Acceptor Films

Interfacial electron transfer across perovskite-electron acceptor heterojunctions plays a significant role in the power-conversion efficiency of perovskite solar cells. Thus, electron donor-acceptor thin films of halide perovskite nanocrystals receive considerable attention. Nevertheless, understanding and optimizing distance- and thickness-dependent electron transfer in perovskite-electron acceptor heterojunctions are important. We reveal the distance-dependent and diffusion-controlled interfacial electron transfer across donor-acceptor heterojunction films formed by formamidinium or cesium lead bromide (FAPbBr₃/CsPbBr₃) perovskite nanocrystals with TiO₂/C₆₀. Self-assembled nanocrystal films prepared from FAPbBr₃ show a longer photoluminescence lifetime than a solution, showing a long-range carrier migration. The acceptors quench the photoluminescence intensity but not the lifetime in a solution, revealing a static electron transfer. Conversely, the electron transfer in the films changes from dynamic to static by moving toward the donor-acceptor interface. While radiative recombination dominates the electron transfer at 800 μm or farther, the acceptors scavenge the photogenerated carriers within 100 μm. This research highlights the significance of interfacial electron transfer in perovskite films.

Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI₃ are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m^-2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI₃ play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

Hemispherical Cesium Lead Bromide Perovskite Single-Mode Microlasers with High-Quality Factors and Strong Purcell Enhancement

We realized a single-mode laser with an ultra-high quality factor in individual cesium lead bromide (CsPbBr₃) perovskite micro-hemispheres fabricated by chemical vapor deposition. A series of lasing property analysis based on cavity size was reported under this material system. Due to good optical confinement capability of the whispering gallery resonant cavity and high optical gain of CsPbBr₃ perovskite micro-hemispheres, single-mode lasing behavior was achieved with an ultra-high quality factor as large as 11,460 at room temperature. To study in detail the physical effects between lasing threshold and cavity, a set of cavity size dependence photoluminescence analyses were performed. We found that the lasing threshold increases while the cavity size decreases. Time-resolved PL analysis was conducted to confirm the relation between cavity size and lasing threshold. The larger cavity stands for longer PL lifetime and indicates easier-to-achieve carrier population inversion. Strong Purcell enhancement could be further investigated by the spontaneous emission coupling factor β and internal quantum efficiency as a function of cavity size. A high β-factor of 0.37 could be obtained from a 2.2 μm diameter hemisphere microcavity and a high Purcell factor of 14 in a 1.9 μm diameter hemisphere microcavity showing strong Purcell enhancement effect in our system.

Influence of Shape Anisotropy on the Emission of Low-Dimensional Semiconductors

The emergence of precise and scalable synthetic methods for producing anisotropic semiconductor nanostructures provides opportunities to tune the photophysical properties of these particles beyond their band gaps, and to incorporate them into higher-order structures with macroscopic anisotropic responses to electric and optical fields. This perspective article discusses some of these opportunities in the context of colloidal semiconductor nanoplatelets, with a focus on the influence of confinement anisotropy on processes that dictate the emission.

Momentarily trapped exciton polaron in two-dimensional lead halide perovskites

Two-dimensional (2D) lead halide perovskites with distinct excitonic feature have shown exciting potential for optoelectronic applications. Compared to their three-dimensional counterparts with large polaron character, how the interplay between long- and short- range exciton-phonon interaction due to polar and soft lattice define the excitons in 2D perovskites is yet to be revealed. Here, we seek to understand the nature of excitons in 2D CsPbBr₃ perovskites by static and time-resolved spectroscopy which is further rationalized with Urbach-Martienssen rule. We show quantitatively an intermediate exciton-phonon coupling in 2D CsPbBr₃ where exciton polarons are momentarily self-trapped by lattice vibrations. The 0.25 ps ultrafast interconversion between free and self-trapped exciton polaron with a barrier of ~ 34 meV gives rise to intrinsic asymmetric photoluminescence with a low energy tail at room temperature. This study reveals a complex and dynamic picture of exciton polarons in 2D perovskites and emphasizes the importance to regulate exciton-phonon coupling.

Two-dimensional perovskite shows potential for optoelectronic applications due to its large exciton binding energy, yet the exciton-phonon interaction with the polar soft lattice is not well-understood. Here, the authors reveal the intermediate coupling regime where exciton polarons are momentarily trapped by lattice vibrations.

Effect of doping on the phase stability and photophysical properties of CsPbI2Br perovskite thin films

In this study, we demonstrate that the crystallization process of CsPbI₂Br films can be modulated when small amounts of additives are added to the precursor solution, leading to the formation of the bright brownish α-phase perovskite films with high orientation along the [100] crystallographic direction. Doped CsPbI₂Br films exhibit improved crystallinity, with high coverage, large grain size and pinhole-free surface morphology, suitable for making high performance optoelectronic devices. We also explored the role of Cl in the photophysical properties of CsPbI₂Br perovskite films using the temperature dependent photoluminescence technique. We found that the Cl ions enhance the photoluminescence emission by reducing the density of trap states, and also decrease the exciton binding energy from (22 ± 3) meV to (11 ± 2) meV. We believe this work contributes to understanding the effect of doping on the crystallization process with an in-depth insight into the photophysical properties of the cesium-based perovskite materials.

The dual-defect passivation role of lithium bromide doping in reducing the nonradiative loss in CsPbX3 (X = Br and I) quantum dots

Lithium bromide as a new duel-defect passivation agent can effectively enhance luminescence properties by reducing the non-radiative loss.

One-step vapour phase growth of two-dimensional formamidinium-based perovskite and its hot carrier dynamics

Formamidinum lead iodide perovskite is one of the most promising materials for application in solar cells due to its narrow band gap and higher thermal stability. In this work, we demonstrate the facile synthesis of square-shaped formamidinium lead iodide single crystals on indium tin oxide (ITO) substrates using a one-step vapour phase deposition method. Formamidinium lead iodide-based two-dimensional layered perovskite crystals were successfully synthesized by controlling the deposition conditions. These crystals exhibited a blue-shifted photoluminescence (PL) compared to the conventional formaminium lead iodide perovskite crystals. Power law fittings of the excitation power dependent PL spectra revealed that Auger heating becomes dominant at high excitation densities. In addition, we observed an asymmetric broadening of the PL peak tail at the high energy side, indicating light emission from hot carriers even under steady-state illumination conditions. Phonon-bottleneck effect and Auger heating were considered as the main mechanisms for retardation of hot carrier cooling. Further analysis of the high energy tails using Maxwell-Boltzmann fitting revealed hot-carrier temperatures as high as 690 K. Our findings provide an important aspect of the synthetic approach of perovskites for their potential application in hot carrier solar cells.

Ultrafast and Long-Range Exciton Migration through Anisotropic Coulombic Coupling in the Textured Films of Fused-Ring Electron Acceptors

The exciton migration mechanism in organic photovoltaic devices is still an ambiguity owing to the insufficient understanding of molecular arrangement on a microscopic scale. Herein, we reveal the relationship between the molecular stacking modes and exciton migration for a representative fused-ring electron acceptor, namely, ITIC. The precise molecular stacking patterns are extracted, and directional Coulombic couplings are calculated based on the information of a single-crystal structure, which proves the anisotropic character for exciton motion. The theoretical analysis results indicate ultrafast exciton migration along the head-to-tail stacking directions with maximum migration length of 330 nm in the finite lifetime of 1 ns. Experimentally, the exciton diffusion length is determined to be 183 nm by exciton-exciton annihilation measurement. This work reveals head-to-tail type intermolecular stacking induces strong anisotropic Coulombic coupling, leading to the ultrafast and long-range exciton migration in nonfullerene systems.

Relating Defect Luminescence and Nonradiative Charge Recombination in MAPbI3 Perovskite Films

Nonradiative losses in semiconductors are related to defects. At cryogenic temperatures, defect-related photoluminescence (PL) at energies lower than the band-edge PL is observed in methylammonium lead triiodide perovskite. We applied multispectral PL imaging to samples prepared by two different procedures and exhibiting 1 order of magnitude different PL quantum yield (PLQY). The high-PLQY sample showed concentration of the emitting defect sites around 10¹²-10¹³ cm^-3. No correlation between PLQY and the relative intensity of the defect emission was found when micrometer-sized local regions of the same sample were compared. However, a clear positive correlation between the lower PLQY and higher defect emission was observed when two preparation methods were contrasted. Therefore, although the emissive defects are not connected directly with the nonradiative centers and may be spatially separated at the nano scale, chemical processes during the perovskite synthesis promote/prevent formation of both types of defects at the same time.

High Photovoltage Inverted Planar Heterojunction Perovskite Solar Cells with All-Inorganic Selective Contact Layers

Inverted planar heterojunction perovskite solar cells based on all-inorganic selective contact layers show great promise for commercialization owing to their competitiveness in terms of cost and stability. However, the power conversion efficiencies (PCEs) of the few reported perovskite solar cells with this type of device structure have been limited by relatively low photovoltages. Here, we propose a new device structure comprising electron beam-evaporated nickel and niobium oxides as the hole and electron selective contact layers, respectively. We demonstrate that a metal oxide material can be directly deposited on a perovskite film by electron beam evaporation without damaging the interface. We propose that the turn-on voltage of the p-n junction formed by the selective contacts represents a quantitative proxy of the charge blocking performance. A high turn-on voltage of 1.36 V is obtained for the NiO_x/Nb₂O₅ p-n junction. An open-circuit voltage of 1.16 V is achieved using a hybrid organic-inorganic perovskite with a band gap of 1.6 eV. The large photovoltage, enabled by the excellent charge extraction and blocking properties of the inorganic selective contact layers, leads to the highest PCE of over 19.0% for this class of device.

Properties of Excitons and Photogenerated Charge Carriers in Metal Halide Perovskites

Metal halide perovskites (MHPs) have recently attracted great attention from the scientific community due to their excellent photovoltaic performance as well as their tremendous potential for other optoelectronic applications such as light-emitting diodes, lasers, and photodetectors. Despite the rapid progress in device applications, a solid understanding of the photophysical properties behind the device performance is highly desirable for MHPs. Here, the properties of excitons and photogenerated charge carriers in MHPs are explored. The unique dielectric constant properties, crystal-liquid duality, and fundamental optical processes of MHPs are first discussed. The properties of excitons and related phenomena in MHPs are then detailed, including the exciton binding energy determined by various methods and their influence factors, exciton dynamics, exciton-photon coupling and related applications, and exciton-phonon coupling in MHPs. The properties of photogenerated free charge carriers in MHPs such as the carrier diffusion length, mobility, and recombination are described. Recent progress in various applications is also demonstrated. Finally, a conclusion and perspectives of future studies for MHPs are presented.

Mechanistic understanding of the charge carrier trapping in CsPbCl3 perovskite nanocrystals

The optical properties of CsPbCl3 perovskite nanocrystals (NCs) with varied sizes were studied in the temperature range from 80 to 320 K by steady-state and time-resolved photoluminescence (PL) spectroscopy. The CsPbCl3 NCs were synthesized with a hot-injection approach at reaction temperature of 140-180 °C. The PL emissions in NC films originate from localized excitons. It is found that NC films shows a significant decrease in PL intensity with increasing temperature while they exhibit a clear increase in PL lifetime from 80 K to around 250 K and then a reduction at high temperature. The abnormal temperature dependence of PL lifetimes in NC films is related to thermal activation of trapped carriers in the NCs. The change of average lifetimes with emission energy indicates the thermal degradation result from the loss of ligands on the surface of NC films. Moreover, the PL intensities, peak energies, and bandwidths of the NC films as a function of temperature are discussed detail.

Charge-Carrier Cooling and Polarization Memory Loss in Formamidinium Tin Triiodide

Reports of slow charge-carrier cooling in hybrid metal halide perovskites have prompted hopes of achieving higher photovoltaic cell voltages through hot-carrier extraction. However, observations of long-lived hot charge carriers even at low photoexcitation densities and an orders-of-magnitude spread in reported cooling times have been challenging to explain. Here we present ultrafast time-resolved photoluminescence measurements on formamidinum tin triiodide, showing fast initial cooling over tens of picoseconds and demonstrating that a perceived secondary regime of slower cooling instead derives from electronic relaxation, state-filling, and recombination in the presence of energetic disorder. We identify limitations of some widely used approaches to determine charge-carrier temperature and make use of an improved model which accounts for the full photoluminescence line shape. Further, we do not find any persistent polarization anisotropy in FASnI₃ within 270 fs after excitation, indicating that excited carriers rapidly lose both polarization memory and excess energy through interactions with the perovskite lattice.

Large-Area Organic-Free Perovskite Solar Cells with High Thermal Stability

Organic-free perovskite solar cells (PSCs) have been considered as the most promising candidate for achieving long-term stability. Here, we demonstrate an organic-free PSC consisting of inorganic CsPbI₂Br perovskite, nickel oxide hole transport layer, and niobium oxide electron transport layer. A maximum power conversion efficiency (PCE) of 11.20% is achieved with an active area of 5 cm², and it increases to 14.11% with smaller area. More importantly, the organic-free PSCs show excellent thermal stability with PCE remaining above 98% of its initial value when heated at 100 °C for 150 min. Postannealing at a proper temperature further increases its maximum PCE to 14.45%, which is the highest among any reported all-inorganic PSCs with a p-i-n structure. The enhanced performance of the postannealed device is ascribed to the decreased trap-state density and improved interface charge-transfer properties. These results demonstrated that this novel organic-free device architecture can be employed to fabricate efficient and stable PSCs for large-scale manufacturing.

Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr₃) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr₃ microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr₃-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr₃. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr₃ perovskites.

Carrier lifetime enhancement in halide perovskite via remote epitaxy

Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the ‘defects-tolerant’ halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.

Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.

Stable and bright formamidinium-based perovskite light-emitting diodes with high energy conversion efficiency

Solution-processable perovskites show highly emissive and good charge transport, making them attractive for low-cost light-emitting diodes (LEDs) with high energy conversion efficiencies. Despite recent advances in device efficiency, the stability of perovskite LEDs is still a major obstacle. Here, we demonstrate stable and bright perovskite LEDs with high energy conversion efficiencies by optimizing formamidinium lead iodide films. Our LEDs show an energy conversion efficiency of 10.7%, and an external quantum efficiency of 14.2% without outcoupling enhancement through controlling the concentration of the precursor solutions. The device shows low efficiency droop, i.e. 8.3% energy conversion efficiency and 14.0% external quantum efficiency at a current density of 300 mA cm⁻², making the device more efficient than state-of-the-art organic and quantum-dot LEDs at high current densities. Furthermore, the half-lifetime of device with benzylamine treatment is 23.7 hr under a current density of 100 mA cm⁻², comparable to the lifetime of near-infrared organic LEDs.

Light-emitting diodes based on halide perovskites have made remarkable progress but their stability is the bottleneck. Here Miao et al. show 14% quantum efficiency at a current density of 300 mA cm-2 and 23.7 hr lifetime under a current density of 100 mA cm-2, making it promising for actual application.

Electrospun Fibers Containing Emissive Hybrid Perovskite Quantum Dots

We demonstrate a single-step fabrication process of highly stable and luminescent polymer fibers embedded with quantum dots (QDs) of the organic-inorganic hybrid perovskite (OIP) (CH₃NH₃PbBr₃) using the electrospinning process. The fiber (∼2 μm diameter) primarily consists of poly(methyl methacrylate) dispersed with clusters of OIP quantum dots. The OIP clusters are radially distributed, normal to the fiber axis. The photoluminescence quantum yield (PLQY) is high (∼80%) and comparable to that of conventional QDs. The emission maxima are tunable by varying the concentration of OIP precursor in the electrospinning solution. Submicron emission maps show an isotropic and continuous emission along the fiber, suggesting uniform distribution of QD clusters. Temperature-dependent PL response indicates features which are a function of the particle size. For small QDs, the PLQY(T) maxima are close to the ambient temperature, whereas the PLQY(T) maxima shift sizably to T < 50 K for larger QDs. Significant waveguiding of QDs emission and amplified spontaneous emission, a prerequisite for lasing, were observed in the fiber confined OIP system at room temperature.

Doped Manipulation of Photoluminescence and Carrier Lifetime from CH3NH3PbI3 Perovskite Thin Films

The compositional doping techniques can delicately tune the band gap, carrier concentration, and mobility of perovskites to optimize the photoelectric properties of materials. It is reported that the doped perovskites have been widely researched in the photovoltaic and photoelectronic field. Here, we show that the photoluminescence intensity and carrier lifetime of CH₃NH₃PbI₃ films have been improved by 3 orders of magnitude by incorporating abundant MnAc₂·4H₂O in the perovskite precursor solution, which benefits from the morphological change and surface passivation induced by hydration water and surface manganese acetate. We also witness the increased photoluminescence quantum yield for film and the changed power conversion efficiency for perovskite solar cells. More importantly, the enhanced chemical stability of perovskite is displayed by immersing films into the water.

Microscopic insight into non-radiative decay in perovskite semiconductors from temperature-dependent luminescence blinking

Organo-metal halide perovskites are promising solution-processed semiconductors, however, they possess diverse and largely not understood non-radiative mechanisms. Here, we resolve contributions of individual non-radiative recombination centers (quenchers) in nanocrystals of methylammonium lead iodide by studying their photoluminescence blinking caused by random switching of quenchers between active and passive states. We propose a model to describe the observed reduction of blinking upon cooling and determine energetic barriers of 0.2 to 0.8 eV for enabling the switching process, which points to ion migration as the underlying mechanism. Moreover, due to the strong influence of individual quenchers, the crystals show very individually-shaped photoluminescence enhancement upon cooling, suggesting that the high variety of activation energies of the PL enhancement reported in literature is not related to intrinsic properties but rather to the defect chemistry. Stabilizing the fluctuating quenchers in their passive states thus appears to be a promising strategy for improving the material quality.

The mechanism of the non-radiative recombination in halide perovskite nanocrystals has not been fully understood. Here Gerhard et al. resolve the contributions of individual recombination centers by photoluminescence blinking measurements and identify ion migration as the underlying mechanism.

Embedded Two-Dimensional Perovskite Nanoplatelets with Air-Stable Luminescence

Two-dimensional (2D) perovskites represent a class of promising nanostructures for optoelectronic applications owing to their giant oscillator strength transition of excitons and high luminescence. However, major challenges lie in the surface ligand engineering and ambient stability. Here, we show that air-stable quasi-2D CsPbBr₃ nanoplatelets can be formed in the matrix of Cs₄PbBr₆ nanosheets by reducing the thickness of Cs₄PbBr₆ to ∼7.6 nm, the scale comparable to the exciton Bohr radius of CsPbBr₃. The 2D behavior of excitons is evidenced by the linear increase of the radiative lifetime with increasing temperature. Moreover, the wide-bandgap Cs₄PbBr₆ plays roles of surface passivation and protection, which leads to good photoluminescence properties without the photobleaching effect and with ambient stability for over 1 month. Our work demonstrates a unique quasi-2D heterostructure of perovskite nanomaterials, which may either serve as a workbench for studying the exciton recombination dynamics or find application in high-performance optoelectronic devices.

Phase control of quasi-2D perovskites and improved light-emitting performance by excess organic cations and nanoparticle intercalation

The optoelectronic properties of quasi-two-dimensional organic-inorganic hybrid perovskites can be tuned by controlling the formation of Ruddlesden-Popper type phases, which enables diverse device applications such as photovoltaics and light-emitting diodes (LEDs). Herein, the influence of excess organic cations on the phase formation of (PEA)2MAn-1PbnBr3n+1 is systematically investigated with various mixing ratios to discover the phase distribution beneficial for light-emitting diodes. It is found that PEA cations exceeding Pb ions in molar ratio are required to produce small-n phases in the films with a strong photoluminescence, while excess MA cations enable the formation of more large-n phases. Low electrical conductivity inherent to the properties of quasi-2D perovskites is further lowered by the introduction of excess organic cations. This is overcome by the intercalation of zinc oxide (ZnO) nanoparticles (NPs) into the blocking layers composed of PEA cations. Importantly, these metal oxide NPs also modulate the phase distribution, enabling the realization of bright green quasi-2D perovskites with a better stability and a maximum luminance of nearly 60 000 cd m-2, which is the highest brightness compared to the so far reported quasi-2D perovskite LEDs incorporating organic cations.

Defect Passivation for Red Perovskite Light-Emitting Diodes with Improved Brightness and Stability

Efficient and stable red perovskite light-emitting diodes (PeLEDs) are important for realizing full-color display and lighting. Red PeLEDs can be achieved either by mixed-halide or low-dimensional perovskites. However, the device performance, especially the brightness, is still low owing to phase separation or poor charge transport issues. Here, we demonstrate red PeLEDs based on three-dimensional (3D) mixed-halide perovskites where the defects are passivated by using 5-aminovaleric acid. The red PeLEDs with an emission peak at 690 nm exhibit an external quantum efficiency of 8.7% and a luminance of 1408 cd m^-2. A maximum luminance of 8547 cd m^-2 can be further achieved as tuning the emission peak to 662 nm, representing the highest brightness of red PeLEDs. Moreover, those LEDs exhibit a half-life of up to 8 h under a high constant current density of 100 mA cm^-2, which is over 10 times improvement compared to literature results.

Photoluminescence enhancement in wide spectral range excitation in CsPbBr3 nanocrystal/Ag nanostructure via surface plasmon coupling

This work demonstrates the surface plasmon (SP)-exciton coupling effect on the photoluminescence (PL) enhancement in CsPbBr₃ nanocrystal (NC) at PMMA/Ag nanostructure (NS) in wide spectral range excitation. The spectra dependent time resolved PL measurement reveals that the emission photons are from the recombination of localized excitons and the PL enhancement can be attributed to the near-field effect, which is also supported by evidence that the enhancements are nearly the same in the whole excitation wavelength from 200 nm to 900 nm. The non-spectral dependence of the enhancement factor suggests that there is the same dynamic process of hot electrons in CsPbBr₃ NC in multiphoton excitation. The hot electrons will relax into localized exciton states, and the electric field generated by SPs will enhance the radiative recombination of excitons. This work will have benefits for revealing dynamics of hot electron relaxing and interactions in multi-photon absorption, as well as the inner mechanism of SP coupling effects.

Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites

As emerging efficient emitters, metal-halide perovskites offer the intriguing potential to the low-cost light emitting devices. However, semiconductors generally suffer from severe luminescence quenching due to insufficient confinement of excitons (bound electron-hole pairs). Here, Sn-triggered extrinsic self-trapping of excitons in bulk 2D perovskite crystal, PEA₂ PbI₄ (PEA = phenylethylammonium), is reported, where exciton self-trapping never occurs in its pure state. By creating local potential wells, isoelectronic Sn dopants initiate the localization of excitons, which would further induce the large lattice deformation around the impurities to accommodate the self-trapped excitons. With such self-trapped states, the Sn-doped perovskites generate broadband red-to-near-infrared (NIR) emission at room temperature due to strong exciton-phonon coupling, with a remarkable quantum yield increase from 0.7% to 6.0% (8.6 folds), reaching 42.3% under a 100 mW cm^-2 excitation by extrapolation. The quantum yield enhancement stems from substantial higher thermal quench activation energy of self-trapped excitons than that of free excitons (120 vs 35 meV). It is further revealed that the fast exciton diffusion involves in the initial energy transfer step by transient absorption spectroscopy. This dopant-induced extrinsic exciton self-trapping approach paves the way for extending the spectral range of perovskite emitters, and may find emerging application in efficient supercontinuum sources.

Luminescent perovskites: recent advances in theory and experiments

This review summarizes previous research on luminescent perovskites, including oxides and halides, with different structural dimensionality. The relationship between the crystal structure, electronic structure and properties is discussed in detail.

Engineering the carrier dynamics of g-C3N4 by rolling up planar sheets into nanotubes via ultrasonic cavitation

Rolling up 2D atomic layered materials into 1D nanotubes gives rise to fascinating properties due to their lower dimension, higher anisotropy, and strain effects. In this work, the curving of 2D graphitic C₃N₄ (g-C₃N₄) sheets into 1D nanotubes is demonstrated for the first time through simple and clean ultrasonic treatments. The steady-state optical transitions are slightly enhanced while the localized trapping of excited carriers is considerably suppressed after rolling up the planar sheets into nanotubes. The mechanical method to modulate the dimension scarcely changes the chemical structures, enabling the pure investigation on shape-induced physical effects. As a proof of principle, this work confirms the dynamics of excited carriers, and the photoelectronic properties of 2D semiconductors can be significantly engineered by a simple morphological evolution.