Suppressing molecular vibrations in organic semiconductors by inducing strain

An n-type semiconducting diazaporphyrin-based hydrogen-bonded organic framework

Significant effort has been devoted to the development of materials that combine high electrical conductivity and permanent porosity. This paper discloses a diazaporphyrin-based hydrogen-bonded organic framework (HOF) with porosity and n-type semiconductivity. A 5,15-diazaporphyrin Ni(ii) complex with carboxyphenyl groups at the meso positions afforded a HOF due to hydrogen-bonding interactions between the carboxy groups and meso-nitrogen atoms. The thermal and chemical stabilities of the HOF were examined using powder X-ray diffraction analysis, and the charge-carrier mobility was determined to be 2.0 × 10-7 m2 V-1 s-1 using the flash-photolysis time-resolved microwave conductivity (FP-TRMC) method. An analogous diazaporphyrin, which does not form a HOF, exhibited mobility that was 20 times lower. The results presented herein highlight the crucial role of hydrogen-bonding networks in achieving conductive pathways that can tolerate thermal perturbation.

Tension Induced Photoluminescence Enhancement in an Organic Single Crystal

Organic single crystals possess distinct advantages due to their highly ordered molecular structures, resulting in improved stability, enhanced carrier mobility, and superior optical characteristics. However, their mechanical rigidity and brittleness impede the applications in flexible and wearable optoelectronic devices. Here, photoluminescence (PL) emission from 2,6-diphenylanthracene (DPA) single crystals is studied under tensile strain, which shows PL enhancement by more than two times with a strain of ≈1.42%. Such a tension induced PL enhancement is reversible, exhibiting no clear optical degradations during 100 cycles of bending and recovery processes. Theoretical calculations reveal that the deformation of molecular structure under strain induces a decrease of the dihedral between anthracene and benzene moieties in DPA molecules. Further, the increased molecular conjugation enhances the molecular oscillator strength, leading to the brightened PL emission. Meanwhile, with the decreased dihedral, the molecular vibrations in DPA crystals are suppressed, which can reduce the non-radiative decay rate. In contrast, no tension induced PL enhancement is observed in polycrystalline DPA thin films as the strain can be released via the grain boundaries. This study highlights the superior optical performance of DPA single crystals under strain field, which will provide new possibilities for DPA-based flexible devices.

Flexible molecular crystals for optoelectronic applications

The cornerstones of the advancement of flexible optoelectronics are the design, preparation, and utilization of novel materials with favorable mechanical and advanced optoelectronic properties. Molecular crystalline materials have emerged as a class of underexplored yet promising materials due to the reduced grain boundaries and defects anticipated to provide enhanced photoelectric characteristics. An inherent drawback that has precluded wider implementation of molecular crystals thus far, however, has been their brittleness, which renders them incapable of ensuring mechanical compliance required for even simple elastic or plastic deformation of the device. It is perplexing that despite a plethora of reports that have in the meantime become available underpinning the flexibility of molecular crystals, the "discovery" of elastically or plastically deformable crystals remains limited to cases of serendipitous and laborious trial-and-error approaches, a situation that calls for a systematic and thorough assessment of these properties and their correlation with the structure. This review provides a comprehensive and concise overview of the current understanding of the origins of crystal flexibility, the working mechanisms of deformations such as plastic and elastic bending behaviors, and insights into the examples of flexible molecular crystals, specifically concerning photoelectronic changes that occur in deformed crystals. We hope this summary will provide a reference for future experimental and computational efforts with flexible molecular crystals aimed towards improving their mechanical behavior and optoelectronic properties, ultimately intending to advance the flexible optoelectronic technology.

Molecular Electronics: From Nanostructure Assembly to Device Integration

Integrated electronics and optoelectronics based on organic semiconductors have attracted considerable interest in displays, photovoltaics, and biosensing owing to their designable electronic properties, solution processability, and flexibility. Miniaturization and integration of devices are growing trends in molecular electronics and optoelectronics for practical applications, which requires large-scale and versatile assembly strategies for patterning organic micro/nano-structures with simultaneously long-range order, pure orientation, and high resolution. Although various integration methods have been developed in past decades, molecular electronics still needs a versatile platform to avoid defects and disorders due to weak intermolecular interactions in organic materials. In this perspective, a roadmap of organic integration technologies in recent three decades is provided to review the history of molecular electronics. First, we highlight the importance of long-range-ordered molecular packing for achieving exotic electronic and photophysical properties. Second, we classify the strategies for large-scale integration of molecular electronics through the control of nucleation and crystallographic orientation, and evaluate them based on factors of resolution, crystallinity, orientation, scalability, and versatility. Third, we discuss the multifunctional devices and integrated circuits based on organic field-effect transistors (OFETs) and photodetectors. Finally, we explore future research directions and outlines the need for further development of molecular electronics, including assembly of doped organic semiconductors and heterostructures, biological interfaces in molecular electronics and integrated organic logics based on complementary FETs.

In-depth theoretical analysis of the influence of an external electric field on charge transport parameters

It is important to develop materials with environmental stability and long device shelf life for use in organic field-effect transistors (OFETs). The microscopic, molecular-level nature of the organic layer in OFETs is not yet well understood. The stability of geometric and electronic structures and the regulation of the external electric field (EEF) on the charge transport properties of four typical homogeneous organic semiconductors (OSCs) were investigated by density functional theory (DFT). The results showed that under the EEF, the structural changes in single-bond linked oligomers were more sensitive and complex than those of condensed molecules, and there were non-monotonic changes in their reorganization energy (λ) during charge transport under an EEF consisting of decreases and then increases (Series D). The change in λ under an EEF can be preliminarily and qualitatively determined by the change in the frontier molecular orbitals (FMOs) - the number of C-atoms with nonbonding characteristics. For single-bonded molecules, the transfer integral is basically unchanged under a low EEF, but it will greatly change at a high EEF. Because the structure and properties of the molecule will greatly change under different EEFs, the effect of an EEF should be fully considered when determining the intrinsic mobility of OSCs, which could cause a deviation 0.3-20 times in mobility. According to detailed calculations, one heterogeneous oligomer, TH-BTz, was designed. Its λ can be greatly reduced under an EEF, and the change in the energy level of FMOs can be adjusted to different degrees. This study provides a reasonable idea for verification of the experimental mobility value and also provides guidance for the directional design of stable high-mobility OSCs.

Understanding radiation-generated electronic traps in radiation dosimeters based on organic field-effect transistors

Organic dosimeters offer unique advantages over traditional technologies, and they can be used to expand the capabilities of current radiation detection systems. In-depth knowledge of the mechanisms underlying the interaction between radiation and organic materials is essential for their widespread adoption. Here, we identified and quantitatively characterized the electronic traps generated during the operation of radiation dosimeters based on organic field-effect transistors. Spectral analysis of the trap density of states, along with optical and structural studies, revealed the origin of trap states as local structural disorder within the crystalline films. Our results provide new insights into the radiation-induced defects in organic dosimeters, and pave the way for the development of more efficient and reliable radiation detection devices.

Oxygen-Induced Lattice Strain for High-Performance Organic Transistors with Enhanced Stability

Integrating the merits of low cost, flexibility, and large-area processing, organic semiconductors (OSCs) are promising candidates for the next-generation electronic materials. The mobility and stability are the key figures of merit for its practical application. However, it is greatly challenging to improve the mobility and stability simultaneously owing to the weak interactions and poor electronic coupling between OSCs molecules. Here, an oxygen-induced lattice strain (OILS) strategy is developed to achieve OSCs with both high mobility and high stability. Utilizing the strategy, the maximum mobility of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) organic field-effect transistor (OFET) rises to 15.3 cm2  V-1  s-1 and the contact resistance lowers to 25.5 Ω cm. Remarkably, the thermal stability of DNTT is much improved, and a record saturated power density of ≈3.4 × 104  W cm-2 is obtained. Both the experiments and theoretical calculations demonstrate that the lattice compressive strain induced by oxygen is responsible for their high performance and stability. Furthermore, the universality of the strategy is manifested in both n-type and p-type small OSCs. This work provides a novel strategy to improve both the mobility and the stability of OSCs, paving the way for the practical applications of organic devices.

Asymmetrically Functionalized Electron-Deficient π-Conjugated System for Printed Single-Crystalline Organic Electronics

Large-area single-crystalline thin films of n-type organic semiconductors (OSCs) fabricated via solution-processed techniques are urgently demanded for high-end electronics. However, the lack of molecular designs that concomitantly offer excellent charge-carrier transport, solution-processability, and chemical/thermal robustness for n-type OSCs limits the understanding of fundamental charge-transport properties and impedes the realization of large-area electronics. The benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) π-electron system with phenethyl substituents (PhC2 -BQQDI) demonstrates high electron mobility and robustness but its strong aggregation results in unsatisfactory solubility and solution-processability. In this work, an asymmetric molecular design approach is reported that harnesses the favorable charge transport of PhC2 -BQQDI, while introducing alkyl chains to improve the solubility and solution-processability. An effective synthetic strategy is developed to obtain the target asymmetric BQQDI (PhC2 -BQQDI-Cn ). Interestingly, linear alkyl chains of PhC2 -BQQDI-Cn (n = 5-7) exhibit an unusual molecular mimicry geometry with a gauche conformation and resilience to dynamic disorders. Asymmetric PhC2 -BQQDI-C5 demonstrates excellent electron mobility and centimeter-scale continuous single-crystalline thin films, which are two orders of magnitude larger than that of PhC2 -BQQDI, allowing for the investigation of electron transport anisotropy and applicable electronics.

2D Organic Materials: Status and Challenges

In the past few decades, 2D layer materials have gradually become a central focus in materials science owing to their uniquely layered structural qualities and good optoelectronic properties. However, in the development of 2D materials, several disadvantages, such as limited types of materials and the inability to synthesize large-scale materials, severely confine their application. Therefore, further exploration of new materials and preparation methods is necessary to meet technological developmental needs. Organic molecular materials have the advantage of being customizable. Therefore, if organic molecular and 2D materials are combined, the resulting 2D organic materials would have excellent optical and electrical properties. In addition, through this combination, the free design and large-scale synthesis of 2D materials can be realized in principle. Furthermore, 2D organic materials exhibit excellent properties and unique functionalities along with great potential for developing sensors, biomedicine, and electronics. In this review, 2D organic materials are divided into five categories. The preparation methods and material properties of each class of materials are also described in detail. Notably, to comprehensively understand each material's advantages, the latest research applications for each material are presented in detail and summarized. Finally, the future development and application prospects of 2D organic materials are briefly discussed.

Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering

The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb₂ O₃ molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb₂ O₃ flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.

Challenging Bendable Organic Single Crystal and Transistor Arrays with High Mobility and Durability toward Flexible Electronics

Bendable organic single crystals are promising candidates for flexible electronics owing to their superior charge-transport properties. However, large-area high-quality organic single crystals are rarely available on the polymer substrates generally used in flexible electronics. Here, a surface-assisted assembly strategy based on a polymer modification, poly(amic acid) (PAA), is developed to grow large-area organic singe crystals on polymer substrates using a simple drop-casting method. The unique surface properties of PAA that enable molecular solution superwetting and promote molecular ordered assembly produce an extraordinary self-driven "meniscus-guided coating" behavior, enabling the fabrication of millimeter-sized, highly aligned organic single crystals for a variety of organic semiconductors. Organic field-effect transistors based on a mode molecule of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene demonstrate the highest (average) mobility of 18.6 cm² V^-1 s^-1 (15.9 cm² V^-1 s^-1 ), attractively low operating voltage of -3 V, and high flexible durability. The results shed light on the large-area fabrication of organic single crystals on polymer dielectrics toward high-performance and integrated plastic electronics.

Charge Transport in Twisted Organic Semiconductor Crystals of Modulated Pitch

Many molecular crystals (approximately one third) grow as twisted, helicoidal ribbons from the melt, and this preponderance is even higher in restricted classes of materials, for instance, charge-transfer complexes. Previously, twisted crystallites of such complexes present an increase in carrier mobilities. Here, the effect of twisting on charge mobility is better analyzed for a monocomponent organic semiconductor, 2,5-bis(3-dodecyl-2-thienyl)-thiazolo[5,4-d]thiazole (BDT), that forms twisted crystals with varied helicoidal pitches and makes possible a correlation of twist strength with carrier mobility. Films are analyzed by X-ray scattering and Mueller matrix polarimetry to characterize the microscale organization of the polycrystalline ensembles. Carrier mobilities of organic field-effect transistors are five times higher when the crystals are grown with the smallest pitches (most twisted), compared to those with the largest pitches, along the fiber elongation direction. A tenfold increase is observed along the perpendicular direction. Simulation of electrical potential based on scanning electron microscopy images and density functional theory suggests that the twisting-enhanced mobility is mainly controlled by the fiber organization in the film. A greater number of tightly packed twisted fibers separated by numerous smaller gaps permit better charge transport over the film surface compared to fewer big crystallites separated by larger gaps.

Light-responsive self-strained organic semiconductor for large flexible OFET sensing array

With the wide application of organic semiconductors (OSCs), researchers are now grappling with a new challenge: design and synthesize OSCs materials with specific functions to satisfy the requirements of high-performance semiconductor devices. Strain engineering is an effective method to improve the semiconductor material’s carrier mobility, which is fundamentally originated from the rearrangement of the atomic packing model of materials under mechanic stress. Here, we design and synthesize a new OSC material named AZO-BTBT-8 based on high-mobility benzo[b]benzo[4,5]thieno[2,3-d]thiophene (BTBT) as the semiconductor backbone. Octane is employed to increase molecular flexibility and solubility, and azobenzene at the other end of the BTBT backbone provides photoisomerization properties and structural balance. Notably, the AZO-BTBT-8 photoisomerization leads to lattice strain in thin-film devices, where exceptional device performance enhancement is realized. On this basis, a large-scale flexible organic field-effect transistor (OFET) device array is fabricated and realizes high-resolution UV imaging with reversible light response.

Strain engineering is effective to improve the carrier mobility of semiconductor materials. Here, the authors demonstrate lattice strain-induced mobility enhancement of an azobenzene compound under photoisomerization and its application in large-scale flexible organic field-effect transistors.

Hyper 100 °C Langmuir-Blodgett (Langmuir-Schaefer) Technique for Organized Ultrathin Film of Polymeric Semiconductors

In this study, we advanced the conventional Langmuir-Blodgett (LB) method to a high-temperature range (above 100 °C) using a newly manufactured LB machine, which is adaptable to a high-boiling-point subphase, as a universally usable apparatus. A sophisticated trough design, with homogeneous heating capability up to approximately 200 °C, together with automatic film compression and Langmuir-Schaefer type film transfer, enabled the fabrication of highly aligned thin films of polymeric semiconductors with uniaxial alignment of polymer backbones, which is desirable for efficient charge transport. Herein, ultrathin films of semicrystalline thiophene-based semiconductors were prepared on ethylene glycol and heated to 80 °C. The analyses of the transferred films with pressure-area isotherms, atomic force microscopy (AFM), polarized optical microscopy (POM), and grazing-incidence wide-angle X-ray scattering (GIWAXS) indicated that the proposed high-temperature LB method allows ideal deposition of high-quality ultrathin films with molecular layer precision at the selected high-temperature conditions. Furthermore, preparing thin-film donor-acceptor-type copolymers in ionic liquids at high temperatures (up to 140 °C) was a challenging task that was successfully demonstrated in this study. Highly ordered thin films of donor-acceptor polymers with a uniaxial backbone orientation were obtained only at 140 °C. The obtained semicrystalline thin films with uniaxially aligned polymer backbones significantly contribute to the two-dimensional overlap of molecular orbitals, which is likely to promote charge transport. The use of the manufactured automatic LB machines is advantageous for better quality films prepared at higher temperatures (even above 100 °C) from various technical viewpoints, including homogeneous heating, constant compression, and automatic film transfer. The novel methodology proposed herein expands the possibilities of the Hyper 100 °C Langmuir-Blodgett technique, which has not been accessible by the conventional LB method with the aqueous subphase.

Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime

The instability of organic field-effect transistors (OFETs) is one key obstacle to practical application and is closely related to the unstable aggregate state of organic semiconductors (OSCs). However, the underlying reason for this instability remains unclear, and no effective solution has been developed. Herein, we find that the intrinsic tensile and compressive strains that exist in OSC films are the key origins for aggregate state instability and device degradation. We further report a strain balance strategy to stabilize the aggregate state by regulating film thickness, which is based on the unique transition from tensile strain to compressive strain with increasing film thickness. Consequently, a strain-free and ultrastable OSC film is obtained by regulating the film thickness, with which an ultrastable OFET with a five-year lifetime is realized. This work provides a deeper understanding of and a solution to the instability of OFETs and sheds light on their industrialization.

A general charge transport picture for organic semiconductors with nonlocal electron-phonon couplings

The nonlocal electron-phonon couplings in organic semiconductors responsible for the fluctuation of intermolecular transfer integrals has been the center of interest recently. Several irreconcilable scenarios coexist for the description of the nonlocal electron-phonon coupling, such as phonon-assisted transport, transient localization, and band-like transport. Through a nearly exact numerical study for the carrier mobility of the Holstein-Peierls model using the matrix product states approach, we locate the phonon-assisted transport, transient localization and band-like regimes as a function of the transfer integral (V) and the nonlocal electron-phonon couplings (ΔV), and their distinct transport behaviors are analyzed by carrier mobility, mean free path, optical conductivity and one-particle spectral function. We also identify an "intermediate regime" where none of the established pictures applies, and the generally perceived hopping regime is found to be at a very limited end in the proposed regime paradigm.

Quantitative analysis of bending hysteresis by real-time monitoring of curvature in flexible polymeric films

Flexibility, viscoelasticity and stress-strain relation in bending polymeric films are key factors in designing mechanically durable flexible electronic devices and soft robots. However, bending hysteresis, which appears as a precursor phenomenon of fracture and fatigue, remains unclear; no one quantitatively evaluated a bending curvature causing hysteresis. Herein, we report the bending hysteresis of polymeric films used as common substrates in flexible electronics by precisely monitoring bending curvatures. By real-time measuring curvatures of films upon bending and subsequent unbending, we have successfully determined the curvatures that cause the hysteresis. These curvatures also depend on a film thickness. Furthermore, we revealed that the occurrence of bending hysteresis is explained by bending strains that have a nonlinear relation with internal stresses. This enables us to predict strain limits that cause the bending hysteresis, based on a stress-strain curve of polymeric films.

Quantitative Prediction of the Electro-Mechanical Response in Organic Crystals

Organic semiconductors' inherent flexibility makes them appealing for advanced applications such as wearable electronics, e-skins, or pressure sensors, and can even be used to enhance their intrinsic electronic properties. Unfortunately, these applications for organic materials are currently hindered by the lack of a quantitative understanding of the interplay between their electrical and mechanical properties. In this work, this gap is filled by presenting an accurate methodology able to predict quantitatively the effects of external deformation on the charge transport properties of any organic semiconductors. Three prototypical materials are investigated, showing that the experimental variation of charge carrier mobility with strain is fully reproduced, even in a wide range of deformations applied along different crystal axes. The results indicate that the intrinsic electro-mechanical response of the materials varies by orders of magnitude within the class of organic semiconductors, a difference rationalized observing that the mobility trend is primarily influenced by the transfer integrals' variation, rather than by a modification of the crystal phonons. In light of its robustness, accuracy, and low computational cost, this protocol represents an ideal tool to quantify the electro-mechanical response in new organic compounds, thus establishing a reliable route for a full exploitation of strain engineering in advanced technologies.

Inversion Symmetry Breaking in Order-Disorder Transitions of Globular Ligands Coordinating to Cobalt(II) and Nickel(II) Bisacetylacetonato Complexes During Heating

Unexpected inversion-symmetry breaking was observed in the order-disorder phase transitions of [M(acac)₂ (abco)₂ ] (1; M=Co²⁺ , 2; Ni²⁺ , acac^- =2,4-pentanedionato, abco=1-azabicyclo-[2.2.2]-octane=quinuclidine) during heating. The isostructural, transition-free complexes [M(acac)₂ (cabco)₂ ] (3; M=Co²⁺ , 4; Ni²⁺ , cabco=3-chloro-1-azabicyclo-[2.2.2]-octane=3-chloroquinuclidine) were also studied for comparison. Complexes 1 and 2 crystallized in ordered phases in the centrosymmetric I2/m space group at 100 K, whereas they crystallized in disordered phases in the non-symmetric I2 space group at 300 K. The 60° step rotation disordering of the abco ligands was observed in the electron density maps of 1 and 2, which was consistent with the transition enthalpies estimated by differential scanning calorimetry (DSC). Gradual phase transitions were observed for 1 and 2 by DSC and powder X-ray diffraction (PXRD) at approximately 225 K. The inversion-symmetry disordering was likely induced by the local pseudo-symmetry of the abco ligands, increasing from trigonal to hexagonal and the increased steric repulsion pathways among them.

Interplay of structural dynamics and electronic effects in an engineered assembly of pentacene in a metal-organic framework

Charge carrier mobility is an important figure of merit to evaluate organic semiconductor (OSC) materials. In aggregated OSCs, this quantity is determined by inter-chromophoric electronic and vibrational coupling. These key parameters sensitively depend on structural properties, including the density of defects. We have employed a new type of crystalline assembly strategy to engineer the arrangement of the OSC pentacene in a structure not realized as crystals to date. Our approach is based on metal-organic frameworks (MOFs), in which suitably substituted pentacenes act as ditopic linkers and assemble into highly ordered π-stacks with long-range order. Layer-by-layer fabrication of the MOF yields arrays of electronically coupled pentacene chains, running parallel to the substrate surface. Detailed photophysical studies reveal strong, anisotropic inter-pentacene electronic coupling, leading to efficient charge delocalization. Despite a high degree of structural order and pronounced dispersion of the 1D-bands for the static arrangement, our experimental results demonstrate hopping-like charge transport with an activation energy of 64 meV dominating the band transport over a wide range of temperatures. A thorough combined quantum mechanical and molecular dynamics investigation identifies frustrated localized rotations of the pentacene cores as the reason for the breakdown of band transport and paves the way for a crystal engineering strategy of molecular OSCs that independently varies the arrangement of the molecular cores and their vibrational degrees of freedom.

Influences of dynamic and static disorder on the carrier mobility of BTBT-C12 derivatives: a multiscale computational study

The role of dynamic and static disorder has been widely discussed for carrier transport in organic semiconductors. In this work, we apply a multiscale approach by combining molecular dynamics simulations, quantum mechanics calculations and kinetic Monte-Carlo simulations to study the influence of dynamic and static disorder on the hole mobility of four didodecyl[1]benzothieno[3,2-b]benzothiophene (BTBT-C12) isomers. It is found that the dynamic disorder of transfer integral tends to decrease the mobility for quasi-1D (quasi one-dimensional) BTBT1 and BTBT4 isomers and increase the mobility for 2D (two-dimensional) BTBT2 and BTBT3 isomers, while the dynamic disorder of site energy tends to decrease mobility for all the four isomers; however, the reduction in 2D molecules is much less than that in quasi-1D molecules. Results show that trap defects could reduce the mobility for both the quasi-1D and 2D molecular structures significantly, even to several orders of magnitude. In addition, our work also reveals that there might exist two kinds of oxidation defects of the scatter type for the concerned isomers, which thus leads to greater reduction in mobility for the quasi-1D molecular structures than the 2D molecular structures. The study shows that the 2D molecular structures are favored over the quasi-1D or 1D molecular structure, and it is expected that these results could be used to shed light on device design in organic electronics.

Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox-active molecular dopants via a simple one-shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm-2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.

Functional flexible molecular crystals: intrinsic and mechanoresponsive properties

Flexible molecular crystals have attracted much attention to unique optoelectronic applications and stimuli-responsive chemistry, resulting in various functional molecular crystals for controlling photons, phonons, electrons, and magnons.

Coherent Electron Transport in Air-Stable, Printed Single-Crystal Organic Semiconductor and Application to Megahertz Transistors

Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field-effect transistors (FETs), and coherent (or band-like) carrier transport properties in OSC single crystals (SCs) have been of interest as they can lead to high carrier mobilities. Recently, such p-type OSC SCs compatible with a printing technology have been used to achieve high-speed FETs; therefore, developments of n-type counterparts may be promising for realizing high-speed complementary organic circuits. Herein, coherent electron transport properties in a printed SC of a state-of-the-art, air-stable n-type OSC, PhC₂ -BQQDI, by means of variable-temperature gated Hall effect measurements and X-ray single-crystal diffraction analyses in conjunction with band structure calculations, are reported. Furthermore, the SC FET is tested for high-speed operations, which obtains a cutoff frequency of 4.3 MHz at an operation voltage of 20 V in air. Thus, PhC₂ -BQQDI is shown as a new candidate for practical applications of SC-based, organic complementary devices.

Robust, high-performance n-type organic semiconductors

Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.

Charge transport in high-mobility conjugated polymers and molecular semiconductors

Conjugated polymers and molecular semiconductors are emerging as a viable semiconductor technology in industries such as displays, electronics, renewable energy, sensing and healthcare. A key enabling factor has been significant scientific progress in improving their charge transport properties and carrier mobilities, which has been made possible by a better understanding of the molecular structure-property relationships and the underpinning charge transport physics. Here we aim to present a coherent review of how we understand charge transport in these high-mobility van der Waals bonded semiconductors. Specific questions of interest include estimates for intrinsic limits to the carrier mobilities that might ultimately be achievable; a discussion of the coupling between charge and structural dynamics; the importance of molecular conformations and mesoscale structural features; how the transport physics of conjugated polymers and small molecule semiconductors are related; and how the incorporation of counterions in doped films-as used, for example, in bioelectronics and thermoelectric devices-affects the electronic structure and charge transport properties.

Bent-Shaped p-Type Small-Molecule Organic Semiconductors: A Molecular Design Strategy for Next-Generation Practical Applications

Significant progress has been made in both molecular design and fundamental scientific understanding of organic semiconductors (OSCs) in recent years. Suitable charge-carrier mobilities (μ) have been obtained by many high-performance OSCs (μ > 10 cm² V^-1 s^-1), but drawbacks remain, including low solution processability and poor thermal durability. In addition, since aggregation of OSCs involves weak intermolecular interactions, the molecules are perpetually in thermal motion, even in the solid state, which disrupts charge-carrier transport. These issues limit potential applications of OSCs. The present work examines a molecular design for hole-transporting (p-type) OSCs based on the "bent-shaped" geometry with specific molecular orbital configurations, which aims to enhance effective intermolecular orbital overlaps, stabilize crystal phases, suppress detrimental molecular motions in the solid state, and improve solution processability. The results indicated that such OSCs have high μ and suitable solution processability, and are resistant to ambient and thermal conditions, making them suitable for practical applications.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study

Utilizing the intrinsic mobility-strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.

Quantum localization and delocalization of charge carriers in organic semiconducting crystals

Charge carrier transport in organic semiconductors is at the heart of many revolutionary technologies ranging from organic transistors, light-emitting diodes, flexible displays and photovoltaic cells. Yet, the nature of charge carriers and their transport mechanism in these materials is still unclear. Here we show that by solving the time-dependent electronic Schrödinger equation coupled to nuclear motion for eight organic molecular crystals, the excess charge carrier forms a polaron delocalized over up to 10-20 molecules in the most conductive crystals. The polaron propagates through the crystal by diffusive jumps over several lattice spacings at a time during which it expands more than twice its size. Computed values for polaron size and charge mobility are in excellent agreement with experimental estimates and correlate very well with the recently proposed transient localization theory.

Self-assembly as a key player for materials nanoarchitectonics

The development of science and technology of advanced materials using nanoscale units can be conducted by a novel concept involving combination of nanotechnology methodology with various research disciplines, especially supramolecular chemistry. The novel concept is called 'nanoarchitectonics' where self-assembly processes are crucial in many cases involving a wide range of component materials. This review of self-assembly processes re-examines recent progress in materials nanoarchitectonics. It is composed of three main sections: (1) the first short section describes typical examples of self-assembly research to outline the matters discussed in this review; (2) the second section summarizes self-assemblies at interfaces from general viewpoints; and (3) the final section is focused on self-assembly processes at interfaces. The examples presented demonstrate the strikingly wide range of possibilities and future potential of self-assembly processes and their important contribution to materials nanoarchitectonics. The research examples described in this review cover variously structured objects including molecular machines, molecular receptors, molecular pliers, molecular rotors, nanoparticles, nanosheets, nanotubes, nanowires, nanoflakes, nanocubes, nanodisks, nanoring, block copolymers, hyperbranched polymers, supramolecular polymers, supramolecular gels, liquid crystals, Langmuir monolayers, Langmuir-Blodgett films, self-assembled monolayers, thin films, layer-by-layer structures, breath figure motif structures, two-dimensional molecular patterns, fullerene crystals, metal-organic frameworks, coordination polymers, coordination capsules, porous carbon spheres, mesoporous materials, polynuclear catalysts, DNA origamis, transmembrane channels, peptide conjugates, and vesicles, as well as functional materials for sensing, surface-enhanced Raman spectroscopy, photovoltaics, charge transport, excitation energy transfer, light-harvesting, photocatalysts, field effect transistors, logic gates, organic semiconductors, thin-film-based devices, drug delivery, cell culture, supramolecular differentiation, molecular recognition, molecular tuning, and hand-operating (hand-operated) nanotechnology.

Dielectric properties and the role of grain boundaries in polycrystalline tetracene at high pressures

Dielectric properties and the role of grain boundaries in polycrystalline tetracene under pressure were investigated using impedance and computational methods.

Organic 2D Optoelectronic Crystals: Charge Transport, Emerging Functions, and Their Design Perspective

2D organic semiconductor crystals are emerging as a fascinating platform with regard to their applications in organic field-effect transistors (OFETs), attributed to their enhanced charge transport efficiency and their new optoelectronic functions, based on their unique morphological features. Advances in material processing techniques have not only enabled easy fabrication of few-monolayered 2D nanostructures but also facilitated exploration of the interesting properties induced by characteristic 2D morphologies. However, to date, only a limited number of representative organic semiconductors have been utilized in organic 2D optoelectronics. Therefore, in order to further spur this research, an intuitive crystal engineering principle for realizing organic 2D crystals is required. In this regard, here, not only the important implications of applying 2D structures to OFET devices are discussed but also a crystal engineering protocol is provided that first predicts molecular arrangements depending on the molecular factors, which is followed by realizing 2D supramolecular synthon networks for different molecular packing motifs. It is expected that 2D organic semiconductor crystals developed by this approach will pave a promising way toward next-generation organic 2D optoelectronics.

Landscape of Charge Carrier Transport in Doped Poly(3-hexylthiophene): Noncontact Approach Using Ternary Combined Dielectric, Paramagnetic, and Optical Spectroscopies

We report on a comprehensive measurement system for mobility and energy states of charge carriers in matter under dynamic chemical doping. The temporal evolution of the iodine doping process of poly(3-hexylthiophene) (P3HT) was monitored directly through electron paramagnetic resonance (EPR) and optical absorption spectroscopy, as well as differential electrical conductivity by the microwave conductivity measurement. The increase in conductivity was observed after the EPR intensity reached a maximum and declined thereafter, and the conductivity finally reached ∼80 S cm^-1. The carrier species changed from a paramagnetic polaron with an estimated mobility of μ_P+ ≈ 2 × 10^-3 cm² V^-1 s^-1 to an antiferromagnetic polaron pair with μ_PP+ ≈ 0.6 cm² V^-1 s^-1. The technique presented here can be a ubiquitous method for rapid and direct observation of charge carrier mobility and energy states in p-type semiconducting materials as a completely noncontact, experimental, and quantitative technique.

Nonlocal Electron-Phonon Coupling in Prototypical Molecular Semiconductors from First Principles

A substantial amount of evidence indicates a relevant role played by the nonlocal electron-phonon couplings in the mechanism of charge transport in organic semiconductors. In this work, we compute the nonlocal electron-phonon coupling for the prototypical molecular semiconductors rubrene and tetracene using the phonon modes obtained from ab initio methods. We do not make the rigid molecular approximation allowing a mixing of intra- and intermolecular modes, and we use a supercell approach to sample the momentum space. Indeed, we find that some low-frequency intramolecular modes are mixed with the rigid-molecule translations and rotations in the modes with the strongest electron-phonon coupling. To rationalize the results we propose a convenient decomposition of the delocalized lattice modes into molecular-based modes.

Conformal transistor arrays based on solution-processed organic crystals

Conformal transistor array based on solution-processed organic crystals, which can provide sensory and scanning features for monitoring, biofeedback, and tracking of physiological function, presents one of the most promising technologies for future large-scale low-cost wearable and implantable electronics. However, it is still a huge challenge for the integration of solution-processed organic crystals into conformal FETs owing to a generally existing swelling phenomenon of the elastic materials and the lack of the corresponding device fabrication technology. Here, we present a promising route to fabricate a conformal field-effect transistor (FET) array based on solution-processed TIPS-pentacene single-crystal micro/nanowire array. By simply drop-casting the organic solution on an anti-solvent photolithography-compatible electrode with bottom-contact coplanar configuration, the transistor array can be formed and can conform onto uneven objects. Excellent electrical properties with device yield as high as 100%, field-effect mobility up to 0.79 cm²V^-1s^-1, low threshold voltage, and good device uniformity are demonstrated. The results open up the capability of solution-processed organic crystals for conformal electronics, suggesting their substantial promise for next-generation wearable and implantable electronics.

Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors

Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a polarization-dependent photoinduced bias-stress effect in two prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{1,2-a})quinolin. We find that the decay rate of the source-drain current in these OFETs under illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of π. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of "hot" holes, photogenerated in the crystal within a very short thermalization length (≪μm) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications.

A map of high-mobility molecular semiconductors

The charge mobility of molecular semiconductors is limited by the large fluctuation of intermolecular transfer integrals, often referred to as off-diagonal dynamic disorder, which causes transient localization of the carriers' eigenstates. Using a recently developed theoretical framework, we show here that the electronic structure of the molecular crystals determines its sensitivity to intermolecular fluctuations. We build a map of the transient localization lengths of high-mobility molecular semiconductors to identify what patterns of nearest-neighbour transfer integrals in the two-dimensional (2D) high-mobility plane protect the semiconductor from the effect of dynamic disorder and yield larger mobility. Such a map helps rationalizing the transport properties of the whole family of molecular semiconductors and is also used to demonstrate why common textbook approaches fail in describing this important class of materials. These results can be used to rapidly screen many compounds and design new ones with optimal transport characteristics.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS₂ (ML-MoS₂) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid-Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS₂ is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the (direct) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm² V^-1 s^-1. Such strain sensitive thermoelectric responses in ML-MoS₂ could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting.