Absorptive pinhole collimators for ballistic Dirac fermions in graphene

Ballistic Electron Source with Magnetically Controlled Valley Polarization in Bilayer Graphene

The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by electrostatic gating in a bilayer graphene (BLG) channel. By steering the ballistic currents with an out-of-plane magnetic field we observe two current jets, a consequence of valley-dependent trigonal warping. Tuning the BLG carrier density and number of QPC modes (m) with a gate voltage we find that the two jets are present for m=1 and up to m=6, indicating the robustness of the effect. Semiclassical simulations confirm the origin of the signals by quantitatively reproducing the jet separations without fitting parameters. In addition, our model shows that the ballistic current jets have opposite valley polarization. As a consequence, by steering each jet toward the detector using a magnetic field, we achieve full control over the valley polarization of the collected currents, envisioning such devices as ballistic current sources with tunable valley polarization. We also show that collimation experiments are a sensitive probe to the trigonal warping of the Fermi surface.

Electron wave and quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states,e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

Specular Electron Focusing between Gate-Defined Quantum Point Contacts in Bilayer Graphene

We report multiterminal measurements in a ballistic bilayer graphene (BLG) channel, where multiple spin- and valley-degenerate quantum point contacts (QPCs) are defined by electrostatic gating. By patterning QPCs of different shapes along different crystallographic directions, we study the effect of size quantization and trigonal warping on transverse electron focusing (TEF). Our TEF spectra show eight clear peaks with comparable amplitudes and weak signatures of quantum interference at the lowest temperature, indicating that reflections at the gate-defined edges are specular, and transport is phase coherent. The temperature dependence of the focusing signal shows that, despite the small gate-induced bandgaps in our sample (≲45 meV), several peaks are visible up to 100 K. The achievement of specular reflection, which is expected to preserve the pseudospin information of the electron jets, is promising for the realization of ballistic interconnects for new valleytronic devices.

Graphene Whisperitronics: Transducing Whispering Gallery Modes into Electronic Transport

When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGMs) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGMs decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of the WGMs to the outside world through source and drain electrodes, a yet unreported configuration. Here, we create a circular p-n island in a graphene device using a polarized scanning gate microscope tip and probe the resulting WGM signatures in in-plane electronic transport through the p-n island. Combining tight-binding simulations and the exact solution of the Dirac equation, we assign the measured device conductance features to WGMs and demonstrate mode selectivity by displacing the p-n island with respect to a constriction. This work therefore constitutes a proof of concept for graphene whisperitronic devices.

Quantum Interferences in Ultraclean Carbon Nanotubes

Electronic analogs of optical interferences are powerful tools to investigate quantum phenomena in condensed matter. In carbon nanotubes (CNTs), it is well established that an electronic Fabry-Perot interferometer can be realized. Other types of quantum interferences should also arise in CNTs, but have proven challenging to realize. In particular, CNTs have been identified as a system to realize the electronic analog of a Sagnac interferometer-the most sensitive optical interferometer. To realize this Sagnac effect, interference between nonidentical transmission channels in a single CNT must be observed. Here, we use suspended, ultraclean CNTs of known chiral index to study both Fabry-Perot and Sagnac electron interferences. We verify theoretical predictions for the behavior of Sagnac oscillations and the persistence of the Sagnac oscillations at high temperatures. As suggested by existing theoretical studies, our results show that these quantum interferences may be used for electronic structure characterization of carbon nanotubes and the study of many-body effects in these model one-dimensional systems.

Optical Excitations with Electron Beams: Challenges and Opportunities

Free electron beams such as those employed in electron microscopes have evolved into powerful tools to investigate photonic nanostructures with an unrivaled combination of spatial and spectral precision through the analysis of electron energy losses and cathodoluminescence light emission. In combination with ultrafast optics, the emerging field of ultrafast electron microscopy utilizes synchronized femtosecond electron and light pulses that are aimed at the sampled structures, holding the promise to bring simultaneous sub-Å-sub-fs-sub-meV space-time-energy resolution to the study of material and optical-field dynamics. In addition, these advances enable the manipulation of the wave function of individual free electrons in unprecedented ways, opening sound prospects to probe and control quantum excitations at the nanoscale. Here, we provide an overview of photonics research based on free electrons, supplemented by original theoretical insights and discussion of several stimulating challenges and opportunities. In particular, we show that the excitation probability by a single electron is independent of its wave function, apart from a classical average over the transverse beam density profile, whereas the probability for two or more modulated electrons depends on their relative spatial arrangement, thus reflecting the quantum nature of their interactions. We derive first-principles analytical expressions that embody these results and have general validity for arbitrarily shaped electrons and any type of electron-sample interaction. We conclude with some perspectives on various exciting directions that include disruptive approaches to noninvasive spectroscopy and microscopy, the possibility of sampling the nonlinear optical response at the nanoscale, the manipulation of the density matrices associated with free electrons and optical sample modes, and appealing applications in optical modulation of electron beams, all of which could potentially revolutionize the use of free electrons in photonics.

Unveiling Electron Optics in Two-Dimensional Materials by Nonlocal Resistance Mapping

We propose a technique based on nonlocal resistance measurements for mapping transport in electron optics experiments. Utilizing tight-binding transport methods, we show how to use a four-terminal measurement to isolate the ballistic transport from a single lead of interest and reconstruct its contribution to the local density of states. This enables us to propose an experimentally tractable four-terminal device with via contacts for measuring Veselago lensing in a graphene p-n junction. Furthermore, we demonstrate how to extend this method as a scanning probe technique, implementing mapping of complex electron optics experiments including angled junctions, collimation optics, and beam steering. Our results highlight the fundamental importance of electron dephasing in ballistic transport and provide guidelines for isolating electron optics signals of interest. These findings unveil a fresh approach to performing electron optics experiments, with a plethora of two-dimensional material platforms to explore.

Chemical identification through two-dimensional electron energy-loss spectroscopy

We explore a disruptive approach to nanoscale sensing by performing electron energy loss spectroscopy through the use of low-energy ballistic electrons that propagate on a two-dimensional semiconductor. In analogy to free-space electron microscopy, we show that the presence of analyte molecules in the vicinity of the semiconductor produces substantial energy losses in the electrons, which can be resolved by energy-selective electron injection and detection through actively controlled potential gates. The infrared excitation spectra of the molecules are thereby gathered in this electronic device, enabling the identification of chemical species with high sensitivity. Our realistic theoretical calculations demonstrate the superiority of this technique for molecular sensing, capable of performing spectral identification at the zeptomol level within a microscopic all-electrical device.

Super-geometric electron focusing on the hexagonal Fermi surface of PdCoO2

Geometric electron optics may be implemented in solids when electron transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO₂ gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a single crystal of PdCoO₂ by use of focused ion beam (FIB) micro-machining, defining crystalline ballistic circuits with features as small as 250 nm. The peculiar hexagonal Fermi surface naturally leads to enhanced electron self-focusing effects in a magnetic field compared to circular Fermi surfaces. This super-geometric focusing can be quantitatively predicted for arbitrary device geometry, based on the hexagonal cyclotron orbits appearing in this material. These results suggest a novel class of ballistic electronic devices exploiting the unique transport characteristics of strongly faceted Fermi surfaces.

Ballistic electron beams in clean metals can be focused by passing currents through well designed contraptions, which is mostly done in isotropic materials described by a circular Fermi surface. Here, the authors demonstrate that the almost hexagonal Fermi surface of PdCoO₂ gives rise to highly directional ballistic transport with enhanced electron self-focusing effects.

A corner reflector of graphene Dirac fermions as a phonon-scattering sensor

Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. Here we report on doping-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a signature of CRs, we observe Fabry-Pérot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter.

Atomic-Scale Characterization of Graphene p-n Junctions for Electron-Optical Applications

Graphene p-n junctions offer a potentially powerful approach toward controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates. Using spectroscopic imaging, we characterize the local doping profile across and along the p-n junctions. We find that realistic junctions exhibit non-ideality both in their geometry as well as in the doping profile across the junction. We show that the geometry of the junction can be improved by using the cleaved edge of van der Waals metals such as graphite to define the junction. We quantify the geometric roughness and doping profiles of junctions experimentally and use these parameters in non-equilibrium Green's function-based simulations of focusing and collimation in these realistic junctions. We find that for realizing Veselago focusing, it is crucial to minimize lateral interface roughness which only natural graphite gates achieve and to reduce junction width, in which both devices under investigation underperform. We also find that carrier collimation is currently limited by the non-linearity of the doping profile across the junction. Our work provides benchmarks of the current graphene p-n junction quality and provides guidance for future improvements.

Breakdown of the Law of Reflection at a Disordered Graphene Edge

The law of reflection states that smooth surfaces reflect waves specularly, thereby acting as a mirror. This law is insensitive to disorder as long as its length scale is smaller than the wavelength. Monolayer graphene exhibits a linear dispersion at low energies and consequently a diverging Fermi wavelength. We present proof that for a disordered graphene boundary, resonant scattering off disordered edge modes results in diffusive electron reflection even when the electron wavelength is much longer than the disorder correlation length. Using numerical quantum transport simulations, we demonstrate that this phenomenon can be observed as a nonlocal conductance dip in a magnetic focusing experiment.

Large-scale tight-binding simulations of quantum transport in ballistic graphene

Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the standard principles of optics is rapidly evolving, calling for a deeper understanding of transport in large-scale devices at a quantum level. Here we perform large-scale quantum transport calculations based on a tight-binding model of graphene and the non-equilibrium Green's function method and include the effects of p-n junctions of different shape, magnetic field, and absorptive regions acting as drains for current. We stress the importance of choosing absorbing boundary conditions in the calculations to correctly capture how current flows in the limit of infinite devices. As a specific application we present a fully quantum-mechanical framework for the '2D Dirac fermion microscope' recently proposed by Bøggild et al (2017 Nat. Commun. 8 10.1038), tackling several key electron-optical effects therein predicted via semiclassical trajectory simulations, such as electron beam collimation, deflection and scattering off Veselago dots. Our results confirm that a semiclassical approach to a large extend is sufficient to capture the main transport features in the mesoscopic limit and the optical regime, but also that a richer electron-optical landscape is to be expected when coherence or other purely quantum effects are accounted for in the simulations.

Chaos in Dirac Electron Optics: Emergence of a Relativistic Quantum Chimera

We uncover a remarkable quantum scattering phenomenon in two-dimensional Dirac material systems where the manifestations of both classically integrable and chaotic dynamics emerge simultaneously and are electrically controllable. The distinct relativistic quantum fingerprints associated with different electron spin states are due to a physical mechanism analogous to a chiroptical effect in the presence of degeneracy breaking. The phenomenon mimics a chimera state in classical complex dynamical systems but here in a relativistic quantum setting-henceforth the term "Dirac quantum chimera," associated with which are physical phenomena with potentially significant applications such as enhancement of spin polarization, unusual coexisting quasibound states for distinct spin configurations, and spin selective caustics. Experimental observations of these phenomena are possible through, e.g., optical realizations of ballistic Dirac fermion systems.

Lithographically Patterned Functional Polymer-Graphene Hybrids for Nanoscale Electronics

Two-dimensional (2D) materials are believed to hold significant promise in nanoscale optoelectronics. While significant progress has been made in this field over the past decade, the ability to control charge carrier density with high spatial precision remains an outstanding challenge in 2D devices. We present an approach that simultaneously addresses the dual issues of charge-carrier doping and spatial precision based on a functional lithographic resist that employs methacrylate polymers containing zwitterionic sulfobetaine pendent groups for noncovalent surface doping of 2D materials. We demonstrate scalable approaches for patterning these polymer films via electron-beam lithography, achieving precise spatial control over carrier doping for fabrication of high-quality, all-2D, lateral p-n junctions in graphene. Our approach preserves all of the desirable structural and electronic properties of graphene while exclusively modifying its surface potential. The functional polymer resist platform and concept offers a facile route toward lithographic doping of graphene- and other 2D material-based optoelectronic devices.

A two-dimensional Dirac fermion microscope

The electron microscope has been a powerful, highly versatile workhorse in the fields of material and surface science, micro and nanotechnology, biology and geology, for nearly 80 years. The advent of two-dimensional materials opens new possibilities for realizing an analogy to electron microscopy in the solid state. Here we provide a perspective view on how a two-dimensional (2D) Dirac fermion-based microscope can be realistically implemented and operated, using graphene as a vacuum chamber for ballistic electrons. We use semiclassical simulations to propose concrete architectures and design rules of 2D electron guns, deflectors, tunable lenses and various detectors. The simulations show how simple objects can be imaged with well-controlled and collimated in-plane beams consisting of relativistic charge carriers. Finally, we discuss the potential of such microscopes for investigating edges, terminations and defects, as well as interfaces, including external nanoscale structures such as adsorbed molecules, nanoparticles or quantum dots.