Concurrent transition of ferroelectric and magnetic ordering near room temperature

Stereointerface Structure Drives Ferroelectricity in BaZrO3 Films

Interfacial strain engineering can induce structural transformation and introduce new physical properties into materials, which is an effective method to prepare new multifunctional materials. However, interfacial strain has a limited spatial impact size. For example, in 2D thin films, the critical thickness of biaxial strain is typically less than 20 nm, which is not conducive to the maintenance of a strained structure and properties in thick film materials. The construction of a 3D interface can solve this problem. The large lattice mismatch between the BaZrO3 thin film and the substrate can induce the out-of-phase boundary (OPB) structure, which can extend along the thickness direction with the stacking of atoms. The lattice distortion at the OPB structure can provide a clamping effect for each layer of atoms, thus expanding the spatial influence range of biaxial strain. As a result, the uniform in-plane strain distribution and strain-induced ferroelectricity (Pr = 13 μC/cm2) are maintained along the thickness direction in BaZrO3 films.

Colossal Ferroelectric Photovoltaic Effect in Inequivalent Double-Perovskite Bi2FeMnO6 Thin Films

Double perovskite films have been extensively studied for ferroelectric order, ferromagnetic order, and photovoltaic effects. The customized ion combinations and ordered ionic arrangements provide unique opportunities for bandgap engineering. Here, a synergistic strategy to induce chemical strain and charge compensation through inequivalent element substitution is proposed. A-site substitution of the barium ion is used to modify the chemical valence and defect density of the two B-site elements in Bi2FeMnO6 double perovskite epitaxial thin films. We dramatically increased the ferroelectric photovoltaic effect to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a thickness of less than 100 nm under white-light LED irradiation. More importantly, the ferroelectric polarization can effectively improve the photovoltaic efficiency of more than 5 times. High-resolution HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy, and DFT calculations collectively demonstrate that inequivalent ion plays a dual role of chemical strain (+1.92 and -1.04 GPa) and charge balance, thereby introducing lattice distortion effects. The reduction of the oxygen vacancy density and the competing Jahn-Teller distortion of the oxygen octahedron are the main phenomena of the change in electron-orbital hybridization, which also leads to enhanced ferroelectric polarization values and optical absorption. The inequivalent strategy can be extended to other double perovskite systems and applied to other functional materials, such as photocatalysis for efficient defect control.

Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation

Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 μC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.

Effects of Multiple Local Environments on Electron Energy Loss Spectra of Epitaxial Perovskite Interfaces

The role of local chemical environments in the electron energy loss spectra of complex multiferroic oxides was studied using computational and experimental techniques. The evolution of the O K-edge across an interface between bismuth ferrite (BFO) and lanthanum strontium manganate (LSMO) was considered through spectral averaging over crystallographically equivalent positions to capture the periodicity of the local O environments. Computational techniques were used to investigate the contribution of individual atomic environments to the overall spectrum, and the role of doping and strain was considered. Chemical variation, even at the low level, was found to have a major impact on the spectral features, whereas strain only induced a small chemical shift to the edge onset energy. Through a combination of these methods, it was possible to explain experimentally observed effects such as spectral flattening near the interface as the combination of spectral responses from multiple local atomic environments.

Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating

Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO₂ ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO₃ (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO₂ at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO₂ /BFO/SrRuO₃ ) with a remanent polarization of 80 µC cm^-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈10² ), long retention time (≈10⁴ s), and high endurance (≈10³ cycles). Furthermore, the structural phase transition of VO₂ is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.

Boosting Piezoelectricity under Illumination via the Bulk Photovoltaic Effect and the Schottky Barrier Effect in BiFeO3

Piezoelectricity is a key functionality induced by conversion between mechanical and electrical energy. Enhancement of piezoelectricity in ferroelectrics often has been realized by complicated synthetical approaches to host unique structural boundaries, so-called morphotropic phase boundaries. While structural approaches are well-known, enhancing piezoelectricity by external stimuli has yet to be clearly explored, despite their advantages of offering not only simple and in situ control without any prior processing requirement, but compatibility with other functionalities. Here, it is shown that light is a powerful control parameter to enhance the piezoelectric property of BiFeO₃ single crystals. A series of measurements based on piezoresponse force microscopy and conductive atomic force microscopy, under illumination, reveal a locally enhanced effective piezoelectric coefficient, d_zz , eventually showing almost a sevenfold increase. This phenomenon is explained with theoretical models by introducing the two main underlying mechanisms attributed to the bulk photovoltaic effect and Schottky barrier effect, involving the role of open-circuit voltage and photocharge carrier density. These results provide key insights to light-induced piezoelectricity enhancement, offering its potential for multifunctional optoelectronic devices.

Chemical-Pressure-Modulated BaTiO3 Thin Films with Large Spontaneous Polarization and High Curie Temperature

Although BaTiO₃ is one of the most famous lead-free piezomaterials, it suffers from small spontaneous and low Curie temperature. Chemical pressure, as a mild way to modulate the structures and properties of materials by element doping, has been utilized to enhance the ferroelectricity of BaTiO₃ but is not efficient enough. Here, we report a promoted chemical pressure route to prepare high-performance BaTiO₃ films, achieving the highest remanent polarization, P_r (100 μC/cm²), to date and high Curie temperature, T_c (above 1000 °C). The negative chemical pressure (∼-5.7 GPa) was imposed by the coherent lattice strain from large cubic BaO to small tetragonal BaTiO₃, generating high tetragonality (c/a = 1.12) and facilitating large displacements of Ti. Such negative pressure is especially significant to the bonding states, i.e., hybridization of Ba 5p-O 2p, whereas ionic bonding in bulk and strong bonding of Ti e_g and O 2p, which contribute to the tremendously enhanced polarization. The promoted chemical pressure method shows general potential in improving ferroelectric and other functional materials.

Extremely Fast Optical and Nonvolatile Control of Mixed-Phase Multiferroic BiFeO3 via Instantaneous Strain Perturbation

Multiferroics-materials that exhibit coupled ferroic orders-are considered to be one of the most promising candidate material systems for next-generation spintronics, memory, low-power nanoelectronics and so on. To advance potential applications, approaches that lead to persistent and extremely fast functional property changes are in demand. Herein, it is revealed that the phase transition and the correlated ferroic orders in multiferroic BiFeO₃ (BFO) can be modulated via illumination of single short/ultrashort light pulses. Heat transport simulations and ultrafast optical pump-probe spectroscopy reveal that the transient strain induced by light pulses plays a key role in determining the persistent final states. Having identified the diffusionless phase transformation features via scanning transmission electron microscopy, sequential laser pulse illumination is further demonstrated to perform large-area phase and domain manipulation in a deterministic way. The work contributes to all-optical and rapid nonvolatile control of multiferroicity, offering different routes while designing novel optoelectronics.

Photovoltaic modulation of ferromagnetism within a FM metal/P-N junction Si heterostructure

Obtaining small, fast, and energy-efficient spintronic devices requires a new way of manipulating spin states in an effective manner. Here, a prototype photovoltaic spintronic device with a p-n junction Si wafer is proposed which generates photo-induced electrons and changes the ferromagnetism by interfacial charge doping. A ferromagnetic resonance field change of 48.965 mT and 11.306 mT is achieved in Co and CoFeB thin films under sunlight illumination, respectively. The transient reflection (TR) analysis and the first principles calculation reveal the photovoltaic electrons that are doped into the magnetic layer and alter its Fermi level, correspondingly. This finding provides a new method of magnetism modulation and demonstrates a solar-driven spintronic device with abundant energy supply, which may further expand the landscape of spintronics research.

The Experimentalist's Guide to the Cycloid, or Noncollinear Antiferromagnetism in Epitaxial BiFeO3

Bismuth ferrite (BiFeO₃ ) is one of the most widely studied multiferroics. The coexistence of ferroelectricity and antiferromagnetism in this compound has driven an intense search for electric-field control of the magnetic order. Such efforts require a complete understanding of the various exchange interactions that underpin the magnetic behavior. An important characteristic of BiFeO₃ is its noncollinear magnetic order; namely, a long-period incommensurate spin cycloid. Here, the progress in understanding this fascinating aspect of BiFeO₃ is reviewed, with a focus on epitaxial films. The advances made in developing the theory used to capture the complexities of the cycloid are first chronicled, followed by a description of the various experimental techniques employed to probe the magnetic order. To help the reader fully grasp the nuances associated with thin films, a detailed description of the spin cycloid in the bulk is provided. The effects of various perturbations on the cycloid are then described: magnetic and electric fields, doping, epitaxial strain, finite size effects, and temperature. To conclude, an outlook on possible device applications exploiting noncollinear magnetism in BiFeO₃ films is presented. It is hoped that this work will act as a comprehensive experimentalist's guide to the spin cycloid in BiFeO₃ thin films.

Effects of pillar size modulation on the magneto-structural coupling in self-assembled BiFeO3–CoFe2O4 heteroepitaxy

The magneto-structural coupling of BiFeO₃ (BFO)–CoFe₂O₄ (CFO)/LaAlO₃ (LAO) heteroepitaxy with various lateral sizes of CFO pillars embedded in a BFO matrix was investigated.

Nanosecond Optically Induced Phase Transformation in Compressively Strained BiFeO_{3} on LaAlO_{3}

Above-band-gap optical illumination of compressively strained BiFeO_{3} induces a transient reversible transformation from a state of coexisting tilted tetragonal-like and rhombohedral-like phases to an untilted tetragonal-like phase. Time-resolved synchrotron x-ray diffraction reveals that the transformation is induced by an ultrafast optically induced lattice expansion that shifts the relative free energies of the tetragonal-like and rhombohedral-like phases. The transformation proceeds at interfaces between regions of the tetragonal-like phase and regions of a mixture of tilted phases, consistent with the motion of a phase boundary. The optically induced transformation demonstrates that there are new optically driven routes towards nanosecond-scale control of phase transformations in ferroelectrics and multiferroics.

Tunable valley and spin splitting in 2H-VSe2/BiFeO3(111) triferroic heterostructures

The spin and valley degrees of freedom in monolayer transition metal dichalcogenides have potential applications in spintronics and valleytronics. However, nonvolatile control on the valley and spin degrees of freedom of two-dimensional ferromagnetic materials by multiferroic materials has been rarely reported. Here, the electronic structure of monolayer 2H-VSe2/BiFeO3(111) triferroic heterostructures has been investigated by first-principles calculations. It is found that the V magnetic moment, spin and valley splitting of monolayer VSe2 can be affected by the BiFeO3(111) substrate with ferroelectric polarization and G-type antiferromagnetic order. Particularly, the reversed orientation of ferroelectric polarization and magnetic order of the BiFeO3(111) substrate can modulate the magnitude of spin and valley splitting, and change the spin splitting direction and the spin-dependent valley state in the valence band of monolayer VSe2. The coupling among ferroelectrics, magnetism and ferrovalley is realized in 2H-VSe2/BiFeO3(111) triferroic heterostructures. These results provide a new platform for multiferroic regulation in spintronics and valleytronics, which can enrich the diversity for high-performance devices based on two dimensional multiferroic heterostructures.

High-resolution angle-resolved lateral piezoresponse force microscopy: Visualization of in-plane piezoresponse vectors

Piezoresponse force microscopy (PFM) is a widely used tool for ferroelectric domain imaging. Lateral PFM (LPFM) utilizes the torsional vibration mode of a probe cantilever; it can distinguish ferroelectric domains having different polarizations with respect to the axis perpendicular to the cantilever, but it is blind to the parallel axis innately. We introduce a high-resolution angle-resolved-LPFM technique that is capable of visualizing full two-dimensional in-plane piezoresponse vector fields. The LPFM signal is analyzed for each pixel with respect to the sample-probe orientation angle with the aid of an image registration technique, and the corresponding local in-plane piezoresponse vector is deduced from the amplitude and phase of the trigonometric curve fitting. This technique provides a pathway for the visualization of complicated ferroelectric and piezoelectric structures.

Complex strain evolution of polar and magnetic order in multiferroic BiFeO3 thin films

Electric-field control of magnetism requires deterministic control of the magnetic order and understanding of the magnetoelectric coupling in multiferroics like BiFeO₃ and EuTiO₃. Despite this critical need, there are few studies on the strain evolution of magnetic order in BiFeO₃ films. Here, in (110)-oriented BiFeO₃ films, we reveal that while the polarization structure remains relatively unaffected, strain can continuously tune the orientation of the antiferromagnetic-spin axis across a wide angular space, resulting in an unexpected deviation of the classical perpendicular relationship between the antiferromagnetic axis and the polarization. Calculations suggest that this evolution arises from a competition between the Dzyaloshinskii-Moriya interaction and single-ion anisotropy wherein the former dominates at small strains and the two are comparable at large strains. Finally, strong coupling between the BiFeO₃ and the ferromagnet Co_0.9Fe_0.1 exists such that the magnetic anisotropy of the ferromagnet can be effectively controlled by engineering the orientation of the antiferromagnetic-spin axis.

Giant polarization in super-tetragonal thin films through interphase strain

Strain engineering has emerged as a powerful tool to enhance the performance of known functional materials. Here we demonstrate a general and practical method to obtain super-tetragonality and giant polarization using interphase strain. We use this method to create an out-of-plane-to-in-plane lattice parameter ratio of 1.238 in epitaxial composite thin films of tetragonal lead titanate (PbTiO₃), compared to 1.065 in bulk. These thin films with super-tetragonal structure possess a giant remanent polarization, 236.3 microcoulombs per square centimeter, which is almost twice the value of known ferroelectrics. The super-tetragonal phase is stable up to 725°C, compared to the bulk transition temperature of 490°C. The interphase-strain approach could enhance the physical properties of other functional materials.

Development of Bismuth Ferrite as a Piezoelectric and Multiferroic Material by Cobalt Substitution

Bismuth ferrite (BiFeO3 ) is the most widely studied multiferroic material with robust ferroelectricity and antiferromagnetic ordering at room temperature. One of the possible device applications of this material is one that utilizes the ferroelectric/piezoelectric property itself such as ferroelectric memory components, actuators, and so on. Other applications are more challenging and make full use of its multiferroic property to realize novel spintronics and magnetic memory devices, which can be addressed electrically as well as magnetically. This progress report summarizes the recent attempt to control the piezoelectric and magnetic properties of BiFeO3 by cobalt substitution.

Single-Crystal BiFeO3 Nanoplates with Robust Antiferromagnetism

Freestanding and single-crystal BiFeO₃ (BFO) nanoplates have been successfully synthesized by a fluoride ion-assisted hydrothermal method, and the thickness of the nanoplates can be effectively tailored from 80 to 380 nm by the concentration of fluoride ions. It is revealed that BFO nanoplates grew via an oriented attachment of layer by layer, giving rise to the formation of the inner interface within the nanoplates. In particular, antiferromagnetic (AFM) phase-transition temperature (Néel temperature, T_N) of the BFO nanoplates is significantly enhanced from typical 370 to ∼512 °C, whereas the Curie temperature (T_C) of the BFO nanoplates is determined to be ∼830 °C, in good agreement with a bulk value. The combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and the first-principle calculations reveals that the interfacial tensile strain remarkably improves the stability of AFM ordering, accounting for the significant enhancement in T_N of BFO plates. Correspondingly, the tensile strain induced the polarization and oxygen octahedral tilting has been observed near the interface. The findings presented here suggest that single-crystal BFO nanoplate is an ideal system for exploring an intrinsic magnetoelectric property, where a tensile strain can be a very promising approach to tailor AFM ordering and polarization rotation for an enhanced coupling effect.

Ferroelectric domain states of a tetragonal BiFeO3 thin film investigated by second harmonic generation microscopy

We investigate the ferroelectric state of a tetragonal BiFeO₃ thin film grown on a LaAlO₃ (001) substrate using an optical second harmonic generation (SHG) microscope. Whereas the ferroelectric state of this material hosts nanometer-sized domains which again form micrometer-sized domains of four different configurations, we could figure out the characteristic features of each domain from the SHG mapping with various sizes of the probe beam, i.e., from 0.7 to 3.9 μm in its diameter. In particular, we demonstrate that a single micrometer-sized domain contributes to the SHG as a coherent summation of the constituent nanometer-sized domains, and multi-micrometer-sized domains contribute to the SHG as an incoherent summation of each micro-domain.

Dipole-correlated carrier transportation and orbital reconfiguration in strain-distorted SrNbxTi1-xO3/KTaO3

Strong electron-correlations can result in un-conventional transportation behaviour, such as metal-insulator transitions, high temperature superconductivity and bad metal conduction. Here we report a distinct transportation characteristic achieved by actively coupling the carriers with randomly distributed lattice-dipoles for strain-distorted SrNb_xTi_1-xO₃. The strong electron correlations split the conduction band, and lead to a distinguished thermal-emitted carrier transportation with an activation energy of ∼10^-2 eV. Further consistency was demonstrated by the respective changes in orbital configurations observed in near edge X-ray absorption fine structures. The present investigation demonstrates new mechanisms for regulating the carrier transportation using polaronic electron correlations.

A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO₃ thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization-electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phase) to in plane (O-phase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO₃ thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.

Impact of Isovalent and Aliovalent Doping on Mechanical Properties of Mixed Phase BiFeO3

In this study, we report the effect of doping in morphotropic BiFeO₃ (BFO) thin films on mechanical properties, revealing variations in the elasticity across the competing phases and their boundaries. Spectroscopic force-distance (F-D) curves and force mapping images by AFM are used to characterize the structure and elastic properties of three BFO thin-film candidates (pure-BFO, Ca-doped BFO, La-doped BFO). We show that softening behavior is observed in isovalent La-doped BFO, whereas hardening is seen in aliovalent Ca-doped BFO. Furthermore, quantitative F-D measurements are extended to show threshold strengths for phase transitions, revealing their dependence on doping in the system. First-principles simulation methods are also employed to understand the observed mechanical properties in pure and doped BFO thin films and to provide microscopic insight on them. These results provide key insight into doping as an effective control parameter to tune nanomechanical properties and suggest an alternative framework to control coupled ferroic functionalities at the nanoscale.

Quantitative Measurements of Size-Dependent Magnetoelectric Coupling in Fe3O4 Nanoparticles

Bulk magnetite (Fe₃O₄), the loadstone used in magnetic compasses, has been known to exhibit magnetoelectric (ME) properties below ∼10 K; however, corresponding ME effects in Fe₃O₄ nanoparticles have been enigmatic. We investigate quantitatively the ME coupling of spherical Fe₃O₄ nanoparticles with uniform diameters (d) from 3 to 15 nm embedded in an insulating host, using a sensitive ME susceptometer. The intrinsic ME susceptibility (MES) of the Fe₃O₄ nanoparticles is measured, exhibiting a maximum value of ∼0.6 ps/m at 5 K for d = 15 nm. We found that the MES is reduced with reduced d but remains finite until d = ∼5 nm, which is close to the critical thickness for observing the Verwey transition. Moreover, with reduced diameter the critical temperature below which the MES becomes conspicuous increased systematically from 9.8 K in the bulk to 19.7 K in the nanoparticles with d = 7 nm, reflecting the core-shell effect on the ME properties. These results point to a new pathway for investigating ME effect in various nanomaterials.

Enhanced Piezoelectric Response due to Polarization Rotation in Cobalt-Substituted BiFeO3 Epitaxial Thin Films

Polarization rotation induced by an external electric field in piezoelectric materials such as PbZr_1-x Ti_x O₃ is generally regarded as the origin of their large piezoelectric responses. Here, the piezoelectric responses of high-quality cobalt-substituted BiFeO₃ epitaxial thin films with monoclinic distortions are systematically examined. It is demonstrated that polarization rotation plays a crucial role in improving the piezoelectric responses in this material.

New modalities of strain-control of ferroelectric thin films

Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

Tuning the magnetic properties of self-assembled BiFeO3-CoFe2O4 heteroepitaxy by magneto-structural coupling

Magnetic and multiferroic nanocomposites with two distinct phases have been a topic of intense research for their profound potential applications in the field of spintronics. In addition to growing high-quality phase separated heteroepitaxial nanocomposites, the strain engineering that is conducive to enhance the tunability of material properties, in general, and the magnetic properties, in particular, is of utmost importance in exploring new possibilities. Here, we investigated the magneto-structural coupling between antiferromagnetic BiFeO3 (BFO) and ferrimagnetic CoFe2O4 (CFO) in self-assembled vertically aligned nanocomposites grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates. We found that BFO exhibits tetragonal (T) and rhombohedral (R) structures as the stable phases and CFO has high magnetocrystalline anisotropy even in the form of nanocomposites. The temperature and magnetic field dependent magnetizations of T_BFO-CFO/LAO and R_BFO-CFO/STO nanocomposites primarily demonstrate the magnetoelastic coupling between these variants.

Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

The phase separation of multiple competing structural/ferroelectric phases has attracted particular attention owing to its excellent electromechanical properties. Little is known, however, about the strain-gradient-induced electronic phenomena at the interface of competing structural phases. Here, we investigate the polymorphic phase interface of bismuth ferrites using spatially resolved photocurrent measurements, present the observation of a large enhancement of the anisotropic interfacial photocurrent by two orders of magnitude, and discuss the possible mechanism on the basis of the flexoelectric effect. Nanoscale characterizations of the photosensitive area through position-sensitive angle-resolved piezoresponse force microscopy and electron holography techniques, in conjunction with phase field simulation, reveal that regularly ordered dipole-charged domain walls emerge. These findings offer practical implications for complex oxide optoelectronics.

Joining of Silver Nanomaterials at Low Temperatures: Processes, Properties, and Applications

A review is provided, which first considers low-temperature diffusion bonding with silver nanomaterials as filler materials via thermal sintering for microelectronic applications, and then other recent innovations in low-temperature joining are discussed. The theoretical background and transition of applications from micro to nanoparticle (NP) pastes based on joining using silver filler materials and nanojoining mechanisms are elucidated. The mechanical and electrical properties of sintered silver nanomaterial joints at low temperatures are discussed in terms of the key influencing factors, such as porosity and coverage of substrates, parameters for the sintering processes, and the size and shape of nanomaterials. Further, the use of sintered silver nanomaterials for printable electronics and as robust surface-enhanced Raman spectroscopy substrates by exploiting their optical properties is also considered. Other low-temperature nanojoining strategies such as optical welding of silver nanowires (NWs) through a plasmonic heating effect by visible light irradiation, ultrafast laser nanojoining, and ion-activated joining of silver NPs using ionic solvents are also summarized. In addition, pressure-driven joining of silver NWs with large plastic deformation and self-joining of gold or silver NWs via oriented attachment of clean and activated surfaces are summarized. Finally, at the end of this review, the future outlook for joining applications with silver nanomaterials is explored.

Nanoscale mechanical softening of morphotropic BiFeO3

Mechanical switching can be used to form phase-transformed areas in mixed-phase bismuth ferrite thin films, which might be exploited to yield various soft elastic areas with greatly reduced Young's modulus on the nanoscale. Due to the mechanically susceptible nature of morphotropic phase boundaries in multiferroics, combined elastic control of electronic, magnetic, and ferroelectric properties becomes possible.

BiFeO3 epitaxial thin films and devices: past, present and future

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

A reentrant phenomenon in magnetic and dielectric properties of Dy2BaNiO5 and an intriguing influence of external magnetic field

We report that the spin-chain compound Dy2BaNiO5, recently proven by us to exhibit magnetoelectric coupling below its Néel temperature (TN) of 58 K, exhibits strong frequency-dependent behavior in ac magnetic susceptibility and complex dielectric properties at low temperatures (<10 K), mimicking the 'reentrant' multiglass phenomenon. Such a behavior is not known among undoped compounds. A new finding in the field of multiferroics is that the characteristic magnetic feature at low temperatures moves towards higher temperatures in the presence of a magnetic field (H), whereas the corresponding dielectric feature shifts towards lower temperatures with H, unlike the situation near TN. This observation indicates that the alignment of spins by external magnetic fields tends to inhibit glassy-like slow electric-dipole dynamics, at least in this system, possibly arising from peculiarities in the magnetic structure.

Doping BiFeO3: approaches and enhanced functionality

BiFeO(3) is one of the most studied multiferroic materials. Both its magnetic and ferroelectric properties can be influenced by doping. A large body of work on the doped material has been presented in the past couple of years. In this paper we provide a perspective on general doping concepts and their impact on the material's functionality.

Heteroepitaxy of tetragonal BiFeO(3) on hexagonal sapphire(0001)

Highly elongated BiFeO3 is epitaxially grown on hexagonal sapphire(0001) substrate within a rather narrow synthesis window. Both X-ray reciprocal space maps and Raman characterizations reveal that it is of true tetragonal symmetry but not the commonly observed MC type monoclinic structure. The tetragonal BiFeO3 film exhibits an island growth mode, with the island edges oriented parallel to the ⟨10-10⟩ and ⟨12-30⟩ directions of the sapphire substrate. With increasing deposition time, a transition from square island to elongated island and then to a continuous film is observed. The metastable tetragonal phase can remain on the substrate without relaxation to the thermally stable rhombohedral phase up to a critical thickness of 450 nm, providing an exciting opportunity for practicable lead-free ferroelectrics. These results facilitate a better understanding of the phase stability of BiFeO3 polymorphs and enrich the knowledge about the heteroepitaxial growth mechanism of functional oxides on symmetry-mismatched substrates.

Investigation of continuous changes in the electric-field-induced electronic state in Bi1−xCaxFeO3−δ

Systematic changes in the electronic structure of Bi_1−xCa_xFeO_3−δ, which are induced by electrically controlled hole carrier doping, are observed by photoemission electron microscopy (PEEM).

Phase transitions, phase coexistence, and piezoelectric switching behavior in highly strained BiFeO(3) films

Highly strained BiFeO3 films transition into a true tetragonal state at 430 °C but remain polar to much higher temperatures (∼800 °C). Piezoelectric switching is only possible up to 300 °C, i.e., at temperatures for which strain stabilizes the stripe-like coexistence of multiple polymorphs.

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

Strain engineering magnetic frustration in perovskite oxide thin films

Our first-principles results show that geometric frustration can be induced in thin films of multiferroic BiFeO(3). We find that competing magnetic interactions occur in the so-called supertetragonal phase of this material, which can be grown on strongly compressive substrates. We show that the frustration level can be tuned by appropriately choosing the substrate; in fact, the phase diagram of the films presents a critical line at which the three-dimensional spin order gets annihilated. We argue that these effects are not exclusive to BiFeO(3) and predict that they also occur in BiCoO(3).

Revisiting properties of ferroelectric and multiferroic thin films under tensile strain from first principles

First-principles calculations are performed to revisit properties of (001) epitaxial BiFeO(3) (BFO) and PbTiO(3) thin films under tensile strain. While these two films possess different ground states when experiencing no misfit strain, they both exhibit the same, previously unknown phase for tensile strains above ≃5% at T = 0 K. This novel state is of orthorhombic Pmc2(1) symmetry and is macroscopically characterized by a large in-plane polarization coexisting with oxygen octahedra tilting in-phase about the out-of-plane direction. On a microscopic point of view, this Pmc2(1) state exhibits short atomic bonds and zigzag cation displacement patterns, unlike conventional ferroelectric phases and typical domains. Such unusual inhomogeneous patterns originate from the coexistence of polar and antiferroelectric distortions having the same magnitude and lead BFO films to be the first known material for which orbital ordering coexists with a large polarization. Furthermore, this Pmc2(1) state is also found in other perovskite films under tensile strain, which emphasizes its generality.

Observation of multiferroic properties in pyroxene NaFeGe2O6

We report the observation of multiferroicity in a clinopyroxene NaFeGe(2)O(6) polycrystal from the investigation of its electrical and magnetic properties. Following the previously known first magnetic transition at T(N1) = 13 K, a second magnetic transition appears at T(N2) = 11.8 K in the temperature dependence of the magnetization. A ferroelectric polarization starts to develop clearly at T(N2) rather than T(N1) and its magnitude increases up to ~13 μC m(-2) at 5 K, supporting the idea that the ferroelectric state in NaFeGe(2)O(6) stems from a helical spin order stabilized below T(N2). When a magnetic field of 90 kOe is applied, the electric polarization decreases to 9 μC m(-2) and T(N2) slightly increases by 0.5 K. At intermediate magnetic fields, around 28 and 78 kOe, anomalies in the magnetoelectric current, magnetoelectric susceptibility, and field derivative of magnetization curves are found, indicating field-induced spin-state transitions. Based on these electrical and magnetic properties, we provide a detailed low temperature phase diagram up to 90 kOe, and discuss the nature of each phase of NaFeGe(2)O(6).

Controlling magnetoelectric coupling by nanoscale phase transformation in strain engineered bismuth ferrite

The magnetoelectric coupling in multiferroic materials is promising for a wide range of applications, yet manipulating magnetic ordering by electric field proves elusive to obtain and difficult to control. In this paper, we explore the prospect of controlling magnetic ordering in misfit strained bismuth ferrite (BiFeO(3), BFO) films, combining theoretical analysis, numerical simulations, and experimental characterizations. Electric field induced transformation from a tetragonal phase to a distorted rhombohedral one in strain engineered BFO films has been identified by thermodynamic analysis, and realized by scanning probe microscopy (SPM) experiment. By breaking the rotational symmetry of a tip-induced electric field as suggested by phase field simulation, the morphology of distorted rhombohedral variants has been delicately controlled and regulated. Such capabilities enable nanoscale control of magnetoelectric coupling in strain engineered BFO films that is difficult to achieve otherwise, as demonstrated by phase field simulations.

Electric field control of nonvolatile four-state magnetization at room temperature

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba0.52Sr2.48Co2Fe24O41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62μ(B)/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

Strain dependence of polarization and piezoelectric response in epitaxial BiFeO3 thin films

Epitaxial strain has recently emerged as a powerful means to engineer the properties of ferroelectric thin films, for instance to enhance the ferroelectric Curie temperature (T(C)) in BaTiO(3). However, in multiferroic BiFeO(3) thin films an unanticipated strain-driven decrease of T(C) was reported and ascribed to the peculiar competition between polar and antiferrodistortive instabilities. Here, we report a systematic characterization of the room-temperature ferroelectric and piezoelectric properties for strain levels ranging between -2.5% and +1%. We find that polarization and the piezoelectric coefficient increase by about 20% and 250%, respectively, in this strain range. These trends are well reproduced by first-principles-based techniques.