Voltage controlled interfacial magnetism through platinum orbits

Spintronic virtual neural network by a voltage controlled ferromagnet for associative memory

Recently, an associative memory operation by a virtual oscillator network, consisting of a single spintronic oscillator, was examined to solve issues in conventional, real oscillators-based neural networks such as inhomogeneities between the oscillators. However, the spintronic oscillator still carries issues dissipating large amount of energy because it is driven by electric current. Here, we propose to use a single ferromagnet manipulated by voltage-controlled magnetic anisotropy (VCMA) effect as a fundamental element in a virtual neural network, which will contribute to significantly reducing the Joule heating caused by electric current. Instead of the oscillation in oscillator networks, magnetization relaxation dynamics were used for the associative memory operation. The associative memory operation for alphabet patterns is successfully demonstrated by giving correspondences between the colors in a pattern recognition task and the sign of a perpendicular magnetic anisotropy coefficient, which could be either positive or negative via the VCMA effect.

Bifurcation to complex dynamics in largely modulated voltage-controlled parametric oscillator

An experimental demonstration of a parametric oscillation of a magnetization in a ferromagnet was performed recently by applying a microwave voltage, indicating the potential to be applied in a switching method in non-volatile memories. In the previous works, the modulation of a perpendicular magnetic anisotropy field produced by the microwave voltage was small compared with an external magnetic field pointing in an in-plane direction. A recent trend is, however, opposite, where an efficiency of the voltage controlled magnetic anisotropy (VCMA) effect is increased significantly by material research and thus, the modulated magnetic anisotropy field can be larger than the external magnetic field. Here, we solved the Landau-Lifshitz-Gilbert equation numerically and investigated the magnetization dynamics driven under a wide range of the microwave VCMA effect. We evaluated bifurcation diagrams, which summarize local maxima of the magnetization dynamics. For low modulation amplitudes, the local maximum is a single point because the dynamics is the periodic parametric oscillation. The bifurcation diagrams show distributions of the local maxima when the microwave magnetic anisotropy field becomes larger than the external magnetic field. The appearance of this broadened distribution indicates complex dynamics such as chaotic and transient-chaotic behaviors, which were confirmed from an analysis of temporal dynamics.

Local modulation of Au/MoS2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection

Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.

Voltage X-Ray Reflectometry: A Method to Study Electric-Field-Induced Changes in Interfacial Electronic Structures

Magnetic multilayers with a separating insulating layer are used in a multitude of functional devices. Controlling the magnetic properties of such devices with an electric field has the potential to vastly enhance their performance. Nevertheless, experimental methods to study the origin of electric-field-induced effects on buried interfaces remain elusive. By using element selective x-ray resonant magnetic reflectometry we are able to gain access to changes in the electronic structure of interfacial atoms caused by an electric field. With this method it is possible to probe interfacial states at the Fermi energy. In a multilayer stack with a Ni/SiO_{2} interface, we find that the electric field slightly shifts the Ni L_{3}-edge in energy, which indicates a change of the oxidation state of interfacial Ni atoms. Further analysis of the strength of the effect reveals that only about 30% of the electrons moved by the electric field end up in interfacial Ni states.

Electric field manipulation of spin chirality and skyrmion dynamic

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes spin chirality. One scientific and technological challenge is understanding and controlling the interaction between spin chirality and electric field. In this study, we investigate an unconventional electric field effect on interfacial DMI, skyrmion helicity, and skyrmion dynamics in a system with broken inversion symmetry. We design heterostructures with a 3d-5d atomic orbital interface to demonstrate the gate bias control of the DMI energy and thus transform the DMI between opposite chiralities. Furthermore, we use this voltage-controlled DMI (VCDMI) to manipulate the skyrmion spin texture. As a result, a type of intermediate skyrmion with a unique helicity is created, and its motion can be controlled and made to go straight. Our work shows the effective control of spin chirality, skyrmion helicity, and skyrmion dynamics by VCDMI. It promotes the emerging field of voltage-controlled chiral interactions and voltage-controlled skyrmionics.

Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe₃GeTe₂/Cr₂Ge₂Te₆/Fe₃GeTe₂ all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe₃GeTe₂ electrodes. The directional charge transfer from metallic Fe₃GeTe₂ to semiconducting Cr₂Ge₂Te₆ is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe₃GeTe₂, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.

Understanding magnetocrystalline anisotropy based on orbital and quadrupole moments

Understanding magnetocrystalline anisotropy (MCA) is fundamentally important for developing novel magnetic materials. Therefore, clarifying the relationship between MCA and local physical quantities observed by spectroscopic measurements, such as the orbital and quadrupole moments, is necessary. In this review, we discuss MCA and the distortion effects in magnetic materials with transition metals (TMs) based on the orbital and quadrupole moments, which are related to the spin-conserving and spin-flip terms in the second-order perturbation calculations, respectively. We revealed that orbital moment stabilized the spin moment in the direction of the larger orbital moment, while the quadrupole moment stabilized the spin moment along the longitudinal direction of the spin-density distribution. The MCA of the magnetic materials with TMs and their interfaces can be determined from the competition between these two contributions. We showed that the perpendicular MCA of the face-centered cubic Ni with tensile tetragonal distortion arose from the orbital moment anisotropy, whereas that of Mn-Ga alloys originated from the quadrupole moment of spin density. In contrast, in the Co/Pd(111) multilayer and Fe/MgO(001), both the orbital moment anisotropy and quadrupole moment of spin density at the interfaces contributed to the perpendicular MCA. Understanding the MCA of magnetic materials and interfaces based on orbital and quadrupole moments is essential to design MCA of novel magnetic applications.

Spintronic reservoir computing without driving current or magnetic field

Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization dynamics driven by electric current and/or magnetic field. This work proposes a method to apply the magnetization dynamics driven by voltage control of magnetic anisotropy to physical reservoir computing, which will be preferable from the viewpoint of low-power consumption. The computational capabilities of benchmark tasks in single MTJ are evaluated by numerical simulation of the magnetization dynamics and found to be comparable to those of echo-state networks with more than 10 nodes.

Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect

There is urgent need for spintronics materials exhibiting a large voltage modulation effect to fulfill the great demand for high-speed, low-power-consumption information processing systems. Fcc-Co (111)-based systems are a promising option for research on the voltage effect, on account of their large perpendicular magnetic anisotropy (PMA) and high degree of freedom in structure. Aiming to observe a large voltage effect in a fcc-Co (111)-based system at room temperature, we investigated the voltage-induced coercivity (H_c) change of perpendicularly magnetized Pt/heavy metal/Co/CoO/amorphous TiO_x structures. The thin CoO layer in the structure was the result of the surface oxidation of Co. We observed a large voltage-induced H_c change of 20.2 mT by applying 2 V (0.32 V/nm) to a sample without heavy metal insertion, and an H_c change of 15.4 mT by applying 1.8 V (0.29 V/nm) to an Ir-inserted sample. The relative thick Co thickness, Co surface oxidation, and large dielectric constant of TiO_x layer could be related to the large voltage-induced H_c change. Furthermore, we demonstrated the separate adjustment of H_c and a voltage-induced H_c change by utilizing both upper and lower interfaces of Co.

The large perpendicular magnetic anisotropy induced at the Co2FeAl/MgAl2O4interface and tuned with the strain, voltage and charge doping by first principles study

The heterostructures with high perpendicular magnetic anisotropy (PMA) have advantages for the application of the nonvolatile memories with long data retention time and small size. The interface structure and magnetic anisotropy energy (MAE) of Co₂FeAl/MgAl₂O₄heterostructures were studied by first principles calculations. The stable interface atomic arrangement is the Co or FeAl layer located above the equatorial oxygen coordinate in the distorted oxygen octahedrons. The Co-O interface can induce large effective PMA up to 4.54 mJ m^-2, but this structure is a metastable structure. Meanwhile, the effective MAE decreases linearly as the thickness of the ferromagnetic layer increase. The effective MAE for the FeAl-O interface is only 1.3 mJ m^-2, while the maximum thickness of Co₂FeAl layer that maintains the PMA effect is about 1.717 nm. These values are very close to the experimental results. Throughd-orbital-resolved MAE, we confirm that the interface PMA is mainly originated from the hybridization betweendxy,dyzanddz2orbitals of interface 3datoms. In addition, the compressive strain, negative electric field and hole doping can significantly enhance the effective PMA of FeAl-O interface. At the same time, Co-O interface will become the most stable structure by tuning the Mg/Al ratio in the spinel layers. The large effective PMA makes the Co₂FeAl/MgAl₂O₄junction a perfect candidate for the next-generation of non-volatile spintronic devices.

Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

The voltage controlled magnetic anisotropy (VCMA) becomes a subject of major interest for spintronics due to its promising potential outcome: fast magnetization manipulation in magnetoresistive random access memories with enhanced storage density and very low power consumption. Using a macrospin approach, we carried out a thorough analysis of the role of the VCMA on the magnetization dynamics of nanostructures with out-of-plane magnetic anisotropy. Diagrams of the magnetization switching have been computed depending on the material and experiment parameters (surface anisotropy, Gilbert damping, duration/amplitude of electric and magnetic field pulses) thus allowing predictive sets of parameters for optimum switching experiments. Two characteristic times of the trajectory of the magnetization were analyzed analytically and numerically setting a lower limit for the duration of the pulses. An interesting switching regime has been identified where the precessional reversal of magnetization does not depend on the voltage pulse duration. This represents a promising path for the magnetization control by VCMA with enhanced versatility.

The effect of Cu additions in FePt-BN-SiO2 heat-assisted magnetic recording media

Structural and chemical order impact magnetic properties of solids, which are governed by spin-orbit coupling and exchange interaction. The ordered L1₀ phase of FePt is a key material to heat-assisted magnetic recording; to enable high storage density, a solid understanding is needed of structural and chemical disorder at small length scales, as well as associated modifications of the electronic band structure. Here, we investigate the effect of boron and copper additions (≲6 mol% Cu) on structural and magnetic properties of L1₀ FePt granular media. Two copper-driven mechanisms, although competing, can lead to improvements in both structural and magnetic properties. In particular, the Cu substitution on the Fe-site leads to a degradation of magnetic properties due to the delocalized electron orbitals originating from a larger Cu d-orbital occupancy. At the same time, Cu substitution leads to an enhanced crystallographic order and consequently magneto-crystalline anisotropy, which offsets the former effect to a large extent. Our study is based on magnetometry, x-ray absorption spectroscopy, ab-initio calculations and a phenomenological theory of disordered FePt granular media. We do not observe a sizable modification to Fe moments and electronic configuration; Cu reveals two different resonances associated with the presence and absence of Cu-B bonds that vary with total Cu concentration.

Voltage controlled on-demand magnonic nanochannels

Development of energy-efficient on-demand magnonic nanochannels (MNCs) can revolutionize on-chip data communication and processing. We have developed a dynamic MNC array by periodically tailoring perpendicular magnetic anisotropy using the electric field. Brillouin light scattering spectroscopy is used to probe the spin wave (SW) dispersion of MNCs formed by applying a static electric field at the CoFeB/MgO interface through the one-dimensional stripe-like array of indium tin oxide electrodes placed on top of Ta/CoFeB/MgO/Al2O3 heterostructures. Magnonic bands, consisting of two SW frequency modes, appear with a bandgap under the application of moderate gate voltage, which can be switched off by withdrawing the voltage. The experimental results are reproduced by plane wave method-based numerical calculations, and simulated SW mode profiles show propagating SWs through nanochannels with different magnetic properties. The anticrossing between these two modes gives rise to the observed magnonic bandgap.

Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface

The ferroelectric switching effect on perpendicular magnetic anisotropy is examined for the case of the BaTiO₃/L1₀-CoFe interface through first-principles calculations of film magnetocrystalline anisotropy energy (MAE), both with the frozen-potential method and the second-order perturbation theory. The ferroelectric switching-MAE relationship is shown to have opposite trends for BaO- and TiO₂-terminated interfaces because of the distinct orbital interaction mechanisms predominant in each termination configuration. The ferroelectric switching effect, changes in Fe-O bond lengths, and termination constitute three different contributors to MAE change, each with a different penetration depth into the CoFe film. The top surface CoFe atoms are shown to feature a high density of minority-spin 3d_xz states, which could play a role in influencing the ferroelectric switching-MAE relationship in cases where the top surface undergoes modifications.

The effect of insertion layer on the perpendicular magnetic anisotropy and its electric-field-induced change at Fe/MgO interface: a first-principles investigation

The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-controlled magnetic anisotropy (VCMA) efficiency. In this work, we investigate the 4dand 5dtransition metal interlayer effect on perpendicular magnetic anisotropy (PMA) and VCMA at Fe/MgO interface by using first-principles calculations. Large PMA more than 11 mJ m-2is found at Fe/MgO interface with Pt insertion layer and the mechanism for PMA is clarified based on the second order perturbation theory. Furthermore, we find that the magnitude and the sign of VCMA efficiency are varied by introducing different insertions at Fe/MgO interface. The Re and Os interlayers lead to a sizable increase in both of the PMA and the VCMA coefficient. Our findings may further emphasize the essential importance of the interface structure on PMA and VCMA and may offer new material platforms for low-power consumption spintronic devices.

Voltage-Driven Magnetization Switching Controlled by Microwave Electric Field Pumping

We study the dynamic switching properties of a nanomagnet under microwave electric field pumping. The periodic modulation of an anisotropy field induced by microwave electric field pumping efficiently excites the uniform magnetization oscillation, allowing for precise control of magnetization switching. Accurate shaping of the pumping voltage waveform also enables us to investigate the transient reaction of magnetization to the relative phase difference of the pumping signal. We demonstrate both experimentally and theoretically the existence of a dead angle in which the uniform oscillation of magnetization is inhibited even though the microwave frequency itself satisfies the conditions of parametric excitation. Our results provide an energy-efficient way of manipulating ultrafast magnetization dynamics in nanomagnetic devices.

Generation of charge current from magnetization oscillation via the inverse of voltage-controlled magnetic anisotropy effect

It is well known that oscillating magnetization induces charge current in a circuit via Faraday's law of electromagnetic induction. New physical phenomena by which magnetization dynamics can produce charge current have gained considerable interest recently. For example, moving magnetization textures, such as domain walls, generates charge current through the spin-motive force. Here, we examine an entirely different effect, which couples magnetization and electric field at the interface between an ultrathin metallic ferromagnet and dielectric. We show that this coupling can convert magnetic energy into electrical energy. This phenomenon is the Onsager reciprocal of the voltage-controlled magnetic anisotropy effect. The effect provides a previously unexplored probe to measure the magnetization dynamics of nanomagnets.

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1₀ phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1₀ FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin-orbit coupling. The symmetry breaking that generates spin torque within L1₀ FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L1₀ FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.

Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.

Enhancing Magneto-Ionic Effects in Magnetic Nanostructured Films via Conformal Deposition of Nanolayers with Oxygen Acceptor/Donor Capabilities

Effective manipulation of the magnetic properties of nanostructured metallic alloys, exhibiting intergrain porosity (i.e., channels) and conformally coated with insulating oxide nanolayers, with an electric field is demonstrated. Nanostructured Co-Pt films are grown by electrodeposition (ED) and subsequently coated with either AlO_x or HfO_x by atomic layer deposition (ALD) to promote magneto-ionic effects (i.e., voltage-driven ion migration) during electrolyte gating. Pronounced variations in coercivity (H_C) and magnetic moment at saturation (m_S) are found at room temperature after biasing the heterostructures. The application of a negative voltage results in a decrease of H_C and an increase of m_S, whereas the opposite trend is achieved for positive voltages. Although magneto-ionic phenomena are already observed in uncoated Co-Pt films (because of the inherent presence of oxygen), the ALD oxide nanocoatings serve to drastically enhance the magneto-ionic effects because of partially reversible oxygen migration, driven by voltage, across the interface between AlO_x or HfO_x and the nanostructured Co-Pt film. Co-Pt/HfO_x heterostructures exhibit the most significant magneto-electric response at negative voltages, with an increase of m_S up to 76% and a decrease of H_C by 58%. The combination of a nanostructured magnetic alloy and a skinlike insulating oxide nanocoating is shown to be appealing to enhance magneto-ionic effects, potentially enabling electrolyte-gated magneto-ionic technology.

Polarization Control of the Interface Ferromagnetic to Antiferromagnetic Phase Transition in Co/Pb(Zr,Ti)O3

Based on first-principles calculations, we predict the polarization control of the interfacial magnetic phase and a giant electronically driven magnetoelectric coupling (MEC) in Co/PbZr_0.25Ti_0.75O₃ (PZT)(001). The effect of Co oxidation at the interface shared with (Zr,Ti)O₂-terminated PZT is evidenced. The magnetic phase of the oxidized Co interface layer is electrically switched from the ferromagnetic to the antiferromagnetic state by reversing the PZT polarization from upward to downward, respectively. A comparative study between oxidized and unoxidized Co/PZT interfaces shows that in oxidized Co/PZT bilayers, the variation of the interface spin moment upon polarization reversal exceeds that of unoxidized Co/PZT bilayers by about 1 order of magnitude. We define a surface MEC constant α_S taking into account the polarization dependence of both the spin and orbital moments. In unoxidized Co/PZT bilayers, we obtain α_S ≈ 2 × 10^-10 G cm² V^-1, while a giant surface coupling α_S ≈ 12 × 10^-10 G cm² V^-1 is found in the case of oxidized Co/PZT. We demonstrate that the polarization control of the magnetocrystalline anisotropy via spin-orbit coupling is not only effective at the interface but it extends to the Co film despite the interface origin of the MEC. This study shows that tailoring the nature of atomic bonding and electron occupancies allows for improving the performance of functional interfaces, enabling an efficient electric field control of spin-orbit interactions. Moreover, the nonlocal character of this effect holds promising perspectives for the application of electronically driven interface MEC in spin-orbitronic devices.

Ferroelectric Control of Magnetism in Ultrathin HfO2\Co\Pt Layers

The recent demonstration of ferroelectricity in ultrathin HfO₂ has kickstarted a new wave of research into this material. HfO₂ in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO₂ (t_HfO2 = 6.5 nm). The ferroelectric effect is shown to control the shape of the magnetic hysteresis, quantified here by the magnetic switching energy. Furthermore, the magnetic properties such as the remanence are modulated by up to 41%. We show that this modulation does not only correlate with the charge accumulation at the interface but also shows an additional component associated with the ferroelectric polarization switching. An in-depth analysis using first order reversal curves shows that the coercive and interaction field distributions of cobalt can be modulated up to, respectively, 5.8% and 10.5% with the ferroelectric polarization reversal.

Superior Magnetic Performance in FePt L10 Nanomaterials

The discovery of the high maximum energy product of 59 MGOe for NdFeB magnets is a breakthrough in the development of permanent magnets with a tremendous impact in many fields of technology. This value is still the world record, for 40 years. This work reports on a reliable and robust route to realize nearly perfectly ordered L1₀ -phase FePt nanoparticles, leading to an unprecedented energy product of 80 MGOe at room temperature. Furthermore, with a 3 nm Au coverage, the magnetic polarization of these nanomagnets can be enhanced by 25% exceeding 1.8 T. This exceptional magnetization and anisotropy is confirmed by using multiple imaging and spectroscopic methods, which reveal highly consistent results. Due to the unprecedented huge energy product, this material can be envisaged as a new advanced basic magnetic component in modern micro and nanosized devices.

Ferroelectricity with Asymmetric Hysteresis in Metallic LiOsO_{3} Ultrathin Films

Bulk LiOsO_{3} was experimentally identified as a "ferroelectric" metal where polar distortions coexist with metallicity [Shi et al., Nat. Mater. 12, 1024 (2013)NMAACR1476-112210.1038/nmat3754]. It is generally believed that polar displacements in a ferroelectric metal cannot be switched by an external electric field. Here, via comprehensive density functional theory calculations, we demonstrate that a two-unit cell-thick LiOsO_{3} thin film exhibits a ferroelectric ground state having an out-of-plane electric dipole moment that can be switched by an external electric field. Moreover, its dipole moment-versus-electric field hysteresis loop is asymmetric because only surface Li ions' displacements are reversed by the external electric field whereas the field-induced force on inner Li atoms is nearly fully screened by itinerant electrons. As a relevant by-product of our study, we also extend the concept of "Born effective charge" to finite metallic systems, and show its usefulness to rationalize the observed effects.

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

The electron spin degree of freedom can provide the functionality of "nonvolatility" in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

Electric Field-Induced Creation and Directional Motion of Domain Walls and Skyrmion Bubbles

Magnetization dynamics driven by an electric field could provide long-term benefits to information technologies because of its ultralow power consumption. Meanwhile, the Dzyaloshinskii-Moriya interaction in interfacially asymmetric multilayers consisting of ferromagnetic and heavy-metal layers can stabilize topological spin textures, such as chiral domain walls, skyrmions, and skyrmion bubbles. These topological spin textures can be controlled by an electric field and hold promise for building advanced spintronic devices. Here, we present an experimental and numerical study on the electric field-induced creation and directional motion of topological spin textures in magnetic multilayer films and racetracks with thickness gradient and interfacial Dzyaloshinskii-Moriya interaction at room temperature. We find that the electric field-induced directional motion of chiral domain wall is accompanied by the creation of skyrmion bubbles at certain conditions. We also demonstrate that the electric field variation can induce motion of skyrmion bubbles. Our findings may provide opportunities for developing skyrmion-based devices with ultralow power consumption.

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO3/Fe3O4 Heterostructure

The ability to electrically write magnetic bits is highly desirable for future magnetic memories and spintronic devices, though fully deterministic, reversible, and nonvolatile switching of magnetic moments by electric field remains elusive despite extensive research. In this work, we develop a concept to electrically switch magnetization via polarization modulated oxygen vacancies, and we demonstrate the idea in a multiferroic epitaxial heterostructure of BaTiO₃/Fe₃O₄ fabricated by pulsed laser deposition. The piezoelectricity and ferroelectricity of BaTiO₃ have been confirmed by macro- and microscale measurements, for which Fe₃O₄ serves as the top electrode for switching the polarization. X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra indicate a mixture of Fe²⁺ and Fe³⁺ at O _h sites and Fe³⁺ at T _d sites in Fe₃O₄, while the room-temperature magnetic domains of Fe₃O₄ are revealed by microscopic magnetic force microscopy measurements. It is demonstrated that the magnetic domains of Fe₃O₄ can be switched by not only magnetic fields but also electric fields in a deterministic, reversible, and nonvolatile manner, wherein polarization reversal by electric field modulates the oxygen vacancy distribution in Fe₃O₄, and thus its magnetic state, making it attractive for electrically written magnetic memories.

Voltage-Controlled Magnetic Anisotropy in Fe1-xCox/Pd/MgO system

Voltage-controlled magnetic anisotropy (VCMA) in an epitaxially grown Fe/Fe_1−xCo_x/Pd/MgO system was investigated using spin-wave spectroscopy. The spin-wave resonant frequency linearly depended on the bias-voltage. The resonant-frequency shift increased with the Co fraction in Fe_1−xCo_x/Pd. We achieved a VCMA of approximately 250 fJ/Vm at the Co/Pd/MgO region.

Microscopic Investigation into the Electric Field Effect on Proximity-Induced Magnetism in Pt

Electric field effects on magnetism in metals have attracted widespread attention, but the microscopic mechanism is still controversial. We experimentally show the relevancy between the electric field effect on magnetism and on the electronic structure in Pt in a ferromagnetic state using element-specific measurements: x-ray magnetic circular dichroism (XMCD) and x-ray absorption spectroscopy (XAS). Electric fields are applied to the surface of ultrathin metallic Pt, in which a magnetic moment is induced by the ferromagnetic proximity effect resulting from a Co underlayer. XMCD and XAS measurements performed under the application of electric fields reveal that both the spin and orbital magnetic moments of Pt atoms are electrically modulated, which can be explained not only by the electric-field-induced shift of the Fermi level but also by the change in the orbital hybridizations.