Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices

Vibronics of multi-material nanopillared membranes and impact on the thermal conductivity

Atomic motion in nanopillars standing on the surface of a silicon membrane generates vibrons, which are wavenumber-independent phonons that act as local resonances. These vibrons couple with the vast majority of the phonon population, including heat-carrying phonons, traveling along the base membrane causing a reduction in the in-plane lattice thermal conductivity. In this work, we examine isolated silicon and gallium nitride nanopillars and for each compare the vibrons density of states (DOS) to those of phonons in an isolated version of the silicon membrane. We show that while the conformity of the phonon-vibron DOS distribution between the two components across the full spectrum is a key factor in reducing the thermal conductivity of the assembled nanostructure, the presence of an intense vibron population at more dominant low frequencies plays a competing role. We report predictions from molecular dynamics simulations showing lower thermal conductivities for a silicon membrane with gallium-nitride nanopillars compared to a silicon membrane with silicon nanopillars.

Ultralow Lattice Thermal Conductivity and Large Glass-Like Contribution in Cs3Bi2I6Cl3: Rattling Atoms and p-Band Electrons Driven Dynamic Rotation

Understanding the origin of ultralow lattice thermal conductivity κL of halide perovskites is of great significance in the energy conversion field. The soft phonon modes and the large anharmonicity corresponding to the dynamic rotation of halogen atoms play an important role in limiting the thermal transport of halide perovskites. The dynamic rotation has long been thought to originate from the electrostatic repulsion of lone pairs around halogen atoms. Here, by studying the layered perovskite Cs3Bi2I6Cl3, it is found that the interaction between the lone pairs contributed by the s bands of halogen atoms is short-range, and the dynamic rotation is really driven by the occupied p-band electrons. It dominates Cs3Bi2I6Cl3 with ultralow κL, < 0.2 W mK-1 at 300 K. Moreover, soft optical phonons are presented ≈1 and 2.2 THz that constitute relatively flat and dense bands due to the rattling Cs and Cl atoms, contributing a large glass-like component to the κL. The results have important implications for understanding the origin of the ultralow κL in halide perovskites and for designing novel perovskites to serve the energy conversion field.

Anderson Localization of Phonons in Thermally Superinsulating Graphene Aerogels with Metal-Like Electrical Conductivity

In the quest to improve energy efficiency and design better thermal insulators, various engineering strategies have been extensively investigated to minimize heat transfer through a material. Yet, the suppression of thermal transport in a material remains elusive because heat can be transferred by multiple energy carriers. Here, the realization of Anderson localization of phonons in a random 3D elastic network of graphene is reported. It is shown that thermal conductivity in a cellular graphene aerogel can be drastically reduced to 0.9 mW m-1 K-1 by the application of compressive strain while keeping a high metal-like electrical conductivity of 120 S m-1 and ampacity of 0.9 A. The experiments reveal that the strain can cause phonon localization over a broad compression range. The remaining heat flow in the material is dominated by charge transport. Conversely, electrical conductivity exhibits a gradual increase with increasing compressive strain, opposite to the thermal conductivity. These results imply that strain engineering provides the ability to independently tune charge and heat transport, establishing a new paradigm for controlling phonon and charge conduction in solids. This approach will enable the development of a new type of high-performance insulation solutions and thermally superinsulating materials with metal-like electrical conductivity.

Multi-heterojunctioned plastics with high thermoelectric figure of merit

Conjugated polymers promise inherently flexible and low-cost thermoelectrics for powering the Internet of Things from waste heat1,2. Their valuable applications, however, have been hitherto hindered by the low dimensionless figure of merit (ZT)3-6. Here we report high-ZT thermoelectric plastics, which were achieved by creating a polymeric multi-heterojunction with periodic dual-heterojunction features, where each period is composed of two polymers with a sub-ten-nanometre layered heterojunction structure and an interpenetrating bulk-heterojunction interface. This geometry produces significantly enhanced interfacial phonon-like scattering while maintaining efficient charge transport. We observed a significant suppression of thermal conductivity by over 60 per cent and an enhanced power factor when compared with individual polymers, resulting in a ZT of up to 1.28 at 368 kelvin. This polymeric thermoelectric performance surpasses that of commercial thermoelectric materials and existing flexible thermoelectric candidates. Importantly, we demonstrated the compatibility of the polymeric multi-heterojunction structure with solution coating techniques for satisfying the demand for large-area plastic thermoelectrics, which paves the way for polymeric multi-heterojunctions towards cost-effective wearable thermoelectric technologies.

Nonequivalent Atomic Vibrations at Interfaces in a Polar Superlattice

In heterostructures made from polar materials, e.g., AlN-GaN-AlN, the nonequivalence of the two interfaces is long recognized as a critical aspect of their electronic properties; in that, they host different 2D carrier gases. Interfaces play an important role in the vibrational properties of materials, where interface states enhance thermal conductivity and can generate unique infrared-optical activity. The nonequivalence of the corresponding interface atomic vibrations, however, is not investigated so far due to a lack of experimental techniques with both high spatial and high spectral resolution. Herein, the nonequivalence of AlN-(Al0.65Ga0.35)N and (Al0.65Ga0.35)N-AlN interface vibrations is experimentally demonstrated using monochromated electron energy-loss spectroscopy in the scanning transmission electron microscope (STEM-EELS) and density-functional-theory (DFT) calculations are employed to gain insights in the physical origins of observations. It is demonstrated that STEM-EELS possesses sensitivity to the displacement vector of the vibrational modes as well as the frequency, which is as critical to understanding vibrations as polarization in optical spectroscopies. The combination enables direct mapping of the nonequivalent interface phonons between materials with different phonon polarizations. The results demonstrate the capacity to carefully assess the vibrational properties of complex heterostructures where interface states dominate the functional properties.

Mapping of Long-Wavelength Phonon Contribution in the Thermal Transport of Alloyed Semiconductor Superlattices

The mapping of long-wavelength phonons is important to understand and manipulate the thermal transport in multilayered structures, but it remains a long-standing challenge due to the collective behaviors of phonons. In this study, an experimental demonstration of mapping the long-wavelength phonons in an alloyed Al0.1Ga0.9As/Al0.9Ga0.1As superlattice system is reported. Multiple strategies to filter out the short- to mid-wavelength phonons are used. The phonon mean-free-path-dependent thermal transport properties directly demonstrate both the suppression effect of the ErAs nanoislands and the contribution of long-wavelength phonons. The contribution from phonons with mean free path longer than 1 μm is clearly demonstrated. A model based on the Boltzmann transport equation is proposed to calculate and describe the thermal transport properties, which depicts a clear physical picture of the transport mechanisms. This method can be extended to map different wavelength phonons and become a universal strategy to explore their thermal transport in various application scenarios.

Machine Learning Aided Design and Optimization of Thermal Metamaterials

Artificial Intelligence (AI) has advanced material research that were previously intractable, for example, the machine learning (ML) has been able to predict some unprecedented thermal properties. In this review, we first elucidate the methodologies underpinning discriminative and generative models, as well as the paradigm of optimization approaches. Then, we present a series of case studies showcasing the application of machine learning in thermal metamaterial design. Finally, we give a brief discussion on the challenges and opportunities in this fast developing field. In particular, this review provides: (1) Optimization of thermal metamaterials using optimization algorithms to achieve specific target properties. (2) Integration of discriminative models with optimization algorithms to enhance computational efficiency. (3) Generative models for the structural design and optimization of thermal metamaterials.

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices

The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal-oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e., a thermal resistive switching effect. We used frequency domain thermoreflectance to monitor the interfacial metal-oxide TBR in (Pt,Cr)/SrTiO3 devices, showing a change of ≈20% under usual SET/RESET operation voltages, depending on the structure of the device. Time-dependent thermal relaxation experiments suggest ionic rearrangement along the whole area of the metal/oxide interface, apart from the ionic filament responsible for the electrical conductivity switching. The experiments presented in this work provide valuable knowledge about oxide ion dynamics in redox-based memristive devices.

Physics mechanisms underlying the optimization of coherent heat transfer across width-modulated nanowaveguides with calculations and machine learning

Optimization of heat transfer at the nanoscale is necessary for efficient modern technology applications in nanoelectronics, energy conversion, and quantum technologies. In such applications, phonons dominate thermal transport and optimal performance requires minimum phonon conduction. Coherent phonon conduction is minimized by maximum disorder in the aperiodic modulation profile of width-modulated nanowaveguides, according to a physics rule. It is minimized for moderate disorder against physics intuition in composite nanostructures. Such counter behaviors call for a better understanding of the optimization of phonon transport in non-uniform nanostructures. We have explored mechanisms underlying the optimization of width-modulated nanowaveguides with calculations and machine learning, and we report on generic behavior. We show that the distribution of the thermal conductance among the aperiodic width-modulation configurations is controlled by the modulation degree irrespective of choices of constituent material, width-modulation-geometry, and composition constraints. The efficiency of Bayesian optimization is evaluated against increasing temperature and sample size. It is found that it decreases with increasing temperature due to thermal broadening of the thermal conductance distribution. It shows weak dependence on temperature in samples with high discreteness in the distribution spectrum. Our work provides new physics insight and indicates research pathways to optimize heat transfer in non-uniform nanostructures.

The effect of echoes interference on phonon attenuation in a nanophononic membrane

Nanophononic materials are characterized by a periodic nanostructuration, which may lead to coherent scattering of phonons, enabling interference and resulting in modified phonon dispersions. We have used the extreme ultraviolet transient grating technique to measure phonon frequencies and lifetimes in a low-roughness nanoporous phononic membrane of SiN at wavelengths between 50 and 100 nm, comparable to the nanostructure lengthscale. Surprisingly, phonon frequencies are only slightly modified upon nanostructuration, while phonon lifetime is strongly reduced. Finite element calculations indicate that this is due to coherent phonon interference, which becomes dominant for wavelengths between ~ half and twice the inter-pores distance. Despite this, vibrational energy transport is ensured through an energy flow among the coherent modes created by reflections. This interference of phonon echos from periodic interfaces is likely another aspect of the mutual coherence effects recently highlighted in amorphous and complex crystalline materials and, in this context, could be used to tailor transport properties of nanostructured materials.

Disorder-induced spiky phonon transmission of harmonic lattices

In this article, we find that impurity in a one-dimensional harmonic chain leads to spikes in the phonon transmission. Using the Langevin equations and Green's function method (LEGF), we find the underlying mechanism of spikes, which comes from the fact that the wave energy can be transferred through uniform subchains laid between impurities without loss. Both the position and magnitude of spikes can be analytically obtained. By employing these results, we provide an analytical approach to transmission in the thermodynamic limit, thereby compensating for the limitation of LEGF that are practically confined to finite system size. Finally, we determine an expression for the localization length based on LEGF, demonstrating the equivalence between mass disorder and spatial disorder in low impurity concentration.

Thermal transport of graphene-C3B superlattices and van der Waals heterostructures: a molecular dynamics study

Two-dimensional (2D) materials have attracted more and more attention due to their excellent properties. In this work, we systematically explore the heat transport properties of Graphene-C3B (GRA-C3B) superlattices and van der Waals (vdW) heterostructures using molecular dynamics method. The effects of interface types and heat flow directions on the in-plane interfacial thermal resistance (ITRip) are analyzed. Obvious thermal rectification is detected in the more energy stable interface, GRA zigzag-C3B zigzag (ZZ) interface, which also has the minimum value of ITRip. The dependence of the superlattices thermal conductivity (k) of the ZZ interface on the period length (lp) is investigated. The results show that when thelpis 3.5 nm, thekreaches a minimum value of 35.52 W m-1K-1, indicating a transition stage from coherent phonon transport to incoherent phonon transport. Afterwards, the effects of system size, temperature, coupling strength and vacancy defect on the out-of-plane interfacial thermal resistance (ITRop) are evaluated. With the increase of temperature, coupling strength and vacancy defect, ITRopare found to reduce effectively due to the enhanced Umklapp phonon scattering and increased probability of energy transfer. Phonon density of states and phonon participation ratio is evaluated to reveal phonon behavior during heat transport. This work is expected to provide essential guidance for the thermal management of nanoelectronics based on 2D monolayer GRA and C3B.

GaAs/GaP Superlattice Nanowires for Tailoring Phononic Properties at the Nanoscale: Implications for Thermal Engineering

The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in one or more dimensions, are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine materials that cannot be put together in conventional heterostructures due to the lattice mismatch. In this work, we investigate GaAs/GaP superlattices embedded in GaP nanowires and demonstrate the tunability of their phononic and optoelectronic properties by inelastic light scattering experiments corroborated by ab initio calculations. We observe clear modifications in the dispersion relation for both acoustic and optical phonons in the superlattices nanowires. We find that by controlling the superlattice periodicity, we can achieve tunability of the phonon frequencies. We also performed wavelength-dependent Raman microscopy on GaAs/GaP superlattice nanowires, and our results indicate a reduction in the electronic bandgap in the superlattice compared to the bulk counterpart. All of our experimental results are rationalized with the help of ab initio density functional perturbation theory (DFPT) calculations. This work sheds fresh insights into how material engineering at the nanoscale can tailor phonon dispersion and open pathways for thermal engineering.

Heat Flow Guiding and Modulation by Kinks in a Silicon Nanoribbon

Tailoring heat flow in solids has profound implications for the innovation of functional thermal devices. However, the current methods face technological challenges related to system complexity, material stability, and operating temperature. In this study, we demonstrated efficient heat flow modulation in a single material without a phase transition, using a simple and entirely material-independent strategy, kinked nanostructure patterning, at near-ambient temperature. By carefully controlling the kink arm length and kink angle of the Si nanoribbons, we achieved a thermal conductivity modulation of up to ∼20%. Our theoretical modeling showed that this modulation results from the competing roles of phonon backscattering and open view channels on heat transport. We also build a regime map based on the existence of an open view channel and provide concrete design guidelines for thermal conductivity modulation considering the kink angle and arm length. This study opens up new opportunities for efficient heat flow manipulation through nanostructure patterning.

Lattice Dynamics and Thermal Transport in Semiconductors with Anti-Bonding Valence Bands

Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands (ABVBs) and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semiconductors with an anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X = K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their ABVBs. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue toward searching for materials with an intrinsically low lattice thermal conductivity.

Engineering Heat Transport Across Epitaxial Lattice-Mismatched van der Waals Heterointerfaces

Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating thermal metamaterials based on atomically thin lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m2 K/GW) and ultralow cross-plane thermal conductivities (0.012-0.07 W/mK) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature, and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.

Ultrafast and Nanoscale Energy Transduction Mechanisms and Coupled Thermal Transport across Interfaces

The coupled interactions among the fundamental carriers of charge, heat, and electromagnetic fields at interfaces and boundaries give rise to energetic processes that enable a wide array of technologies. The energy transduction among these coupled carriers results in thermal dissipation at these surfaces, often quantified by the thermal boundary resistance, thus driving the functionalities of the modern nanotechnologies that are continuing to provide transformational benefits in computing, communication, health care, clean energy, power recycling, sensing, and manufacturing, to name a few. It is the purpose of this Review to summarize recent works that have been reported on ultrafast and nanoscale energy transduction and heat transfer mechanisms across interfaces when different thermal carriers couple near or across interfaces. We review coupled heat transfer mechanisms at interfaces of solids, liquids, gasses, and plasmas that drive the resulting interfacial heat transfer and temperature gradients due to energy and momentum coupling among various combinations of electrons, vibrons, photons, polaritons (plasmon polaritons and phonon polaritons), and molecules. These interfacial thermal transport processes with coupled energy carriers involve relatively recent research, and thus, several opportunities exist to further develop these nascent fields, which we comment on throughout the course of this Review.

Manipulating the Interfacial Band Bending For Enhancing the Thermoelectric Properties of 1T'-MoTe2 /Bi2 Te3 Superlattice Films

Interfacial charge effects, such as band bending, modulation doping, and energy filtering, are critical for improving electronic transport properties of superlattice films. However, effectively manipulating interfacial band bending has proven challenging in previous studies. In this study, (1T'-MoTe2 )x (Bi2 Te3 )y superlattice films with symmetry-mismatch were successfully fabricated via the molecular beam epitaxy. This enables to manipulate the interfacial band bending, thereby optimizing the corresponding thermoelectric performance. These results demonstrate that the increase of Te/Bi flux ratio (R) effectively tailored interfacial band bending, resulting in a reduction of the interfacial electric potential from ≈127 meV at R = 16 to ≈73 meV at R = 8. It is further verified that a smaller interfacial electric potential is more beneficial for optimizing the electronic transport properties of (1T'-MoTe2 )x (Bi2 Te3 )y . Especially, the (1T'-MoTe2 )1 (Bi2 Te3 )12 superlattice film displays the highest thermoelectric power factor of 2.72 mW m-1 K-2 among all films, due to the synergy of modulation doping, energy filtering, and the manipulation of band bending. Moreover, the lattice thermal conductivity of the superlattice films is significantly reduced. This work provides valuable guidance to manipulate the interfacial band bending and further enhance the thermoelectric performances of superlattice films.

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, which originate from the "wrong" stacking sequences of Si-C bilayers, is a general feature of SiC. However, the effects of stacking faults on the thermal properties of SiC are not well understood. In this study, we evaluated the accuracy of Tersoff, MEAM, and GW potentials in describing the thermal transport of SiC. Additionally, the thermal conductivity of 3C/4H-SiC nanowires was investigated using non-equilibrium molecular dynamics simulations (NEMD). Our results show that thermal conductivity exhibits an increase and then saturation as the total lengths of the 3C/4H-SiC nanowires vary from 23.9 nm to 95.6 nm, showing the size effect of molecular dynamics simulations of the thermal conductivity. There is a minimum thermal conductivity, as a function of uniform period length, of the 3C/4H-SiC nanowires. However, the thermal conductivities of nanowires weakly depend on the gradient period lengths and the ratio of 3C/4H. Additionally, the thermal conductivity of 3C/4H-SiC nanowires decreases continuously from compressive strain to tensile strain. The reduction in thermal conductivity suggests that 3C/4H-SiC nanowires have potential applications in advanced thermoelectric devices. Our study provides insights into the thermal transport properties of SiC nanowires and can guide the development of SiC-based thermoelectric materials.

Observation of phonon Poiseuille flow in isotopically purified graphite ribbons

In recent times, the unique collective transport physics of phonon hydrodynamics motivates theoreticians and experimentalists to explore it in micro- and nanoscale and at elevated temperatures. Graphitic materials have been predicted to facilitate hydrodynamic heat transport with their intrinsically strong normal scattering. However, owing to the experimental difficulties and vague theoretical understanding, the observation of phonon Poiseuille flow in graphitic systems remains challenging. In this study, based on a microscale experimental platform and the pertinent occurrence criterion in anisotropic solids, we demonstrate the existence of the phonon Poiseuille flow in a 5.5 μm-wide, suspended and isotopically purified graphite ribbon up to a temperature of 90 K. Our observation is well supported by our theoretical model based on a kinetic theory with fully first-principles inputs. Thus, this study paves the way for deeper insight into phonon hydrodynamics and cutting-edge heat manipulating applications.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

GaAs/GaP superlattice nanowires: growth, vibrational and optical properties

Nanowire geometry allows semiconductor heterostructures to be obtained that are not achievable in planar systems, as in, for example, axial superlattices made of large lattice mismatched materials. This provides a great opportunity to explore new optical transitions and vibrational properties resulting from the superstructure. Moreover, superlattice nanowires are expected to show improved thermoelectric properties, owing to the dominant role of surfaces and interfaces that can scatter phonons more effectively, reducing the lattice thermal conductivity. Here, we show the growth of long (up to 100 repetitions) GaAs/GaP superlattice nanowires with different periodicities, uniform layer thicknesses, and sharp interfaces, realized by means of Au-assisted chemical beam epitaxy. By optimizing the growth conditions, we obtained great control of the nanowire diameter, growth rate, and superlattice periodicity, offering a valuable degree of freedom for engineering photonic and phononic properties at the nanoscale. As a proof of concept, we analyzed a single type of superlattice nanowire with a well-defined periodicity and we observed room temperature optical emission and new phonon modes. Our results prove that high-quality GaAs/GaP superlattice nanowires have great potential for phononic and optoelectronic studies and applications.

Liquid-Modulated Photothermal Phenomena in Porous Silicon Nanostructures Studied by μ-Raman Spectroscopy

In the present study, the effect of liquid filling of the nanopore network on thermal transport in porous Si layers was investigated by μ-Raman spectroscopy. The values of thermal conductivity of porous Si and porous Si-hexadecane composites were estimated by fitting the experimentally measured photoinduced temperature rise with finite element method simulations. As a result, filling the pores with hexadecane led to (i) an increase in the thermal conductivity of the porous Si-hexadecane composite in a wide range of porosity levels (40-80%) and (ii) a suppression of the characteristic laser-induced phase transition of Si from cubic to hexagonal form.

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

The manipulation of phonon transport with coherent waves in solids is of fundamental interest and useful for thermal conductivity design. Based on equilibrium molecular dynamics simulations and lattice dynamics calculations, the thermal transport in SiGe superlattice nanowires with a tuned Si/Ge interface density was investigated by using the core-shell and phononic structures as the primary stacking layers. It was found that the thermal conductivity decreased with the increase of superlattice period lengths (Lp) when Lp was larger than 4 nm. This is because introducing additional Si/Ge interfaces can enhance phonon scattering. However, when Lp<4 nm, the increased interface density could promote heat transfer. Phonon density-of-state analysis demonstrates that new modes between 10 and 14 THz are formed in structures with dense Si/Ge interfaces, which is a signature of coherent phonon transport as those modes do not belong to bulk Si or Ge. The density of the newly generated modes increases with the increase of interface density, leading to an enhanced coherent transport. Besides, with the increase of interface density, the energy distribution of the newly generated modes becomes more balanced on Si and Ge atoms, which also facilitates heat transfer. Our current work is not only helpful for understanding coherent phonon transport but also beneficial for the design of new materials with tunable thermal conductivity.

Phonon Transport in GaAs and InAs Twinning Superlattices

Crystal phase engineering gives access to new types of periodic nanostructures, such as the so-called twinning superlattices, where the motif of the superlattice is determined by a periodic rotation of the crystal. Here, by means of atomistic nonequilibrium molecular dynamics calculations, we study to what extent these periodic systems can be used to alter phonon transport in a controlled way, similar to what has been predicted and observed in conventional superlattices based on heterointerfaces. We focus on twinning superlattices in GaAs and InAs and highlight the existence of two different transport regimes: in one, each interface behaves like an independent scatterer; in the other, a segment with a sufficiently large number of closely spaced interfaces is seen by propagating phonons as a metamaterial with its own thermal properties. In this second scenario, we distinguish the case where the phonon mean free path is smaller or larger than the superlattice segment, pointing out a different dependence of the thermal resistance with the number of interfaces.

Thermal rectification in polytelescopic Ge nanowires

Herein we served non-equilibrium molecular dynamics (NEMD) approach to simulate thermal rectification in the mono- and polytelescopic Ge nanowires (GeNWs). We considered mono-telescopic structures with different Fat-Thin configurations (15-10 nm-nm or Type (I); 15-5 nm-nm or Type (II); and 10-5 or Type (III) nm-nm) as generic models. We simulated the variation of thermal conductivity against interfacial cross-sectional temperature as well as the direction of heat transfer, where a higher thermal conductivity correlating to thicker nanowires, and a more significant drop (or discontinuity) in the average interface temperature in the positive (or negative) direction were detected. Noticeably, interfacial thermal resistance followed the order of Type (II) (48 K/μW, maximal) ˃ Type (III) ˃ Type (I) (5 K/μW, minimal). In the second stage, a series of polytelescopic nanostructures of GeNWs were born with consecutive cross-sectional interfaces. Surprisingly, larger interfacial cross-sectional areas equivalent to smaller diameter changes along the GeNWs were responsible for higher temperature rectification. This led to a very limited thermal conductivity loss or a very high unidirectional heat transfer along the polytelescopic structures - the key for manufacturing next generation high-performance thermal diodes.

Nanoscale imaging of phonon dynamics by electron microscopy

Spatially resolved vibrational mapping of nanostructures is indispensable to the development and understanding of thermal nanodevices1, modulation of thermal transport2 and novel nanostructured thermoelectric materials3-5. Through the engineering of complex structures, such as alloys, nanostructures and superlattice interfaces, one can significantly alter the propagation of phonons and suppress material thermal conductivity while maintaining electrical conductivity2. There have been no correlative experiments that spatially track the modulation of phonon properties in and around nanostructures due to spatial resolution limitations of conventional optical phonon detection techniques. Here we demonstrate two-dimensional spatial mapping of phonons in a single silicon-germanium (SiGe) quantum dot (QD) using monochromated electron energy loss spectroscopy in the transmission electron microscope. Tracking the variation of the Si optical mode in and around the QD, we observe the nanoscale modification of the composition-induced red shift. We observe non-equilibrium phonons that only exist near the interface and, furthermore, develop a novel technique to differentially map phonon momenta, providing direct evidence that the interplay between diffuse and specular reflection largely depends on the detailed atomistic structure: a major advancement in the field. Our work unveils the non-equilibrium phonon dynamics at nanoscale interfaces and can be used to study actual nanodevices and aid in the understanding of heat dissipation near nanoscale hotspots, which is crucial for future high-performance nanoelectronics.

Sustainability and Circular Economy Perspectives of Materials for Thermoelectric Modules

The growing demand for energy and the environmental problems derived from this problem are arousing interest throughout the world in the development of clean and efficient alternative energy sources, which involve ecological processes and materials. The materials used in the processes associated with thermoelectric generation technology will provide solutions to this situation. Materials related to energy make it possible to generate energy from waste heat residues, which are derived from various industrial processes in which significant fractions of residual energy are deposited into the environment. However, despite the fact that thermoelectric technology represents some relative advantages in relation to other energy generation processes, it in turn faces some technical limitations such as its low efficiency with respect to the high costs that its implementation demands today, and this has been the subject of intense research in recent years. On the other hand, the sustainability of the processes when analyzed from a circular economy perspective must be taken into account for the implementation of this technology, particularly when considering its large-scale implementation. In this article, a systematic search focused on the sustainability of thermoelectric modules is carried out as a step towards a circular economy model. The review aims to examine recent developments and trends in the development of thermoelectric systems in order to promote initiatives in favor of the environment. The aim of this study is to present a current overview, including trends and limitations, in research related to thermoelectric materials. As a result of this analysis, it was found that aspects related to costs and initiatives related to circular economy models have been little explored, which represents not only an opportunity for the development of new approaches in the conception of thermoelectric systems, but also for the conception of optimized designs that address the current limitations of this technology.

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

Emergent interface vibrational structure of oxide superlattices

As the length scales of materials decrease, the heterogeneities associated with interfaces become almost as important as the surrounding materials. This has led to extensive studies of emergent electronic and magnetic interface properties in superlattices^1–9. However, the interfacial vibrations that affect the phonon-mediated properties, such as thermal conductivity^10,11, are measured using macroscopic techniques that lack spatial resolution. Although it is accepted that intrinsic phonons change near boundaries^12,13, the physical mechanisms and length scales through which interfacial effects influence materials remain unclear. Here we demonstrate the localized vibrational response of interfaces in strontium titanate–calcium titanate superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy, density functional theory calculations and ultrafast optical spectroscopy. Structurally diffuse interfaces that bridge the bounding materials are observed and this local structure creates phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. Our results provide direct visualization of the progression of the local atomic structure and interface vibrations as they come to determine the vibrational response of an entire superlattice. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behaviour. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids with emergent infrared and thermal responses.

The vibrational states emerging at the interface in oxide superlattices are characterized theoretically and at atomic resolution, showing the impact of material length scales on structure and vibrational response.

Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires

We study the thermal conductivity of diameter-modulated Si nanowires to understand the impact of different nanoscale transport mechanisms as a function of nanowire morphology. Our investigation couples transient suspended microbridge measurements of diameter-modulated Si nanowires synthesized via vapor-liquid-solid growth and dopant-selective etching with predictive Boltzmann transport modeling. We show that the presence of a low thermal conductivity phase (i.e., porosity) dominates the reduction in effective thermal conductivity and is supplemented by increased phonon-boundary scattering. The relative contributions of both mechanisms depend on the details of the nanoscale morphology. Our findings provide valuable insights into the factors that govern thermal conduction in complex nanoscale materials.

Heat Conduction Theory Including Phonon Coherence

Understanding and quantifying the fundamental physical property of coherence of thermal excitations is a long-standing and general problem in physics. The conventional theory, i.e., the phonon gas model, fails to describe coherence and its impact on thermal transport. In this Letter, we propose a general heat conduction formalism supported by theoretical arguments and direct atomic simulations, which takes into account both the conventional phonon gas model and the wave nature of thermal phonons. By naturally introducing wave packets in the heat flux from fundamental concepts, we derive an original thermal conductivity expression including coherence times and lifetimes. Our theory and simulations reveal two distinct types of coherence, i.e., intrinsic and mutual, appearing in two different temperature ranges. This contribution establishes a fundamental frame for understanding and quantifying the coherence of thermal phonons, which should have a general impact on the estimation of the thermal properties of solids.

Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface

Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO₃ membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.

Tuning Coherent-Phonon Heat Transport in LaCoO3/SrTiO3 Superlattices

Accessing the regime of coherent phonon propagation in nanostructures opens enormous possibilities to control the thermal conductivity in energy harvesting devices, phononic circuits, etc. In this paper we show that coherent phonons contribute substantially to the thermal conductivity of LaCoO₃/SrTiO₃ oxide superlattices, up to room temperature. We show that their contribution can be tuned through small variations of the superlattice periodicity, without changing the total superlattice thickness. Using this strategy, we tuned the thermal conductivity by 20% at room temperature. We also discuss the role of interface mixing and epitaxial relaxation as an extrinsic, material dependent key parameter for understanding the thermal conductivity of oxide superlattices.

Reducing Kapitza resistance between graphene/water interface via interfacial superlattice structure

The control of thermal transport across solid/liquid interface has attracted great interests for efficient thermal management in the integrated devices. Based on molecular dynamics simulations, we study the effect of interfacial superlattice structure on the Kapitza resistance between graphene/water interface. Compared to the original interface, introducing interfacial superlattice structure can result in an obvious reduction of Kapitza resistance by as large as 40%, exhibiting a decreasing trend of Kapitza resistance with the decrease of superlattice period. Surprisingly, by analyzing the structure of water block and atomic vibration characteristics on both sides of the interface, we find the interfacial superlattice structure has a minor effect on the water structure and overlap in the vibrational spectrum, suggesting that the improved interfacial heat transfer is not mainly originated from the liquid block. Instead, the spectral energy density analysis reveals that phonon scattering rate in the interfacial graphene layer is significantly enhanced after superlattice decoration, giving rise to the increased thermal resistance between the interfacial graphene layer and its nearest neighboring layer. As this thermal resistance is coupled to the Kapitza resistance due to the local nature of interfacial superlattice decoration, the enhanced thermal resistance in the solid segment indirectly reduces the Kapitza resistance between graphene/water interface, which is supported by the enhancement of the spectral interfacial thermal conductance upon superlattce decoration at microscopic level. Our study uncovers the physical mechanism for controlling heat transfer across solid/liquid interface via interfacial superlattice structure, which might provide valuable insights for designing efficient thermal interfaces.

Picosecond ultrasonics with a free-running dual-comb laser

We present a free-running 80-MHz dual-comb polarization-multiplexed solid-state laser which delivers 1.8 W of average power with 110-fs pulse duration per comb. With a high-sensitivity pump-probe setup, we apply this free-running dual-comb laser to picosecond ultrasonic measurements. The ultrasonic signatures in a semiconductor multi-quantum-well structure originating from the quantum wells and superlattice regions are revealed and discussed. We further demonstrate ultrasonic measurements on a thin-film metalized sample and compare these measurements to ones obtained with a pair of locked femtosecond lasers. Our data show that a free-running dual-comb laser is well-suited for picosecond ultrasonic measurements and thus it offers a significant reduction in complexity and cost for this widely adopted non-destructive testing technique.

Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO3 Thin Film Deposited in a Composition-Spread Geometry

We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO₃ thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ∼25% titanium deficient to ∼20% titanium rich to be studied. By fitting the experimental results to the Debye model we deconvolute and quantify the two main phonon-scattering sources in the system: ferroelectric domain walls (DWs) and point defects. Our results prove that ferroelectric DWs are the main agent limiting the thermal conductivity in this system, not only in the stoichiometric region of the thin film ([Pb]/[Ti] ≈ 1) but also when the concentration of the cation point defects is significant (up to ∼15%). Hence, DWs in ferroelectric materials are a source of phonon scattering at least as effective as point defects. Our results demonstrate the viability and effectiveness of using reconfigurable DWs to control the thermal conductivity in solid-state devices.

Phonon-engineered extreme thermal conductivity materials

Materials with ultrahigh or low thermal conductivity are desirable for many technological applications, such as thermal management of electronic and photonic devices, heat exchangers, energy converters and thermal insulation. Recent advances in simulation tools (first principles, the atomistic Green's function and molecular dynamics) and experimental techniques (pump-probe techniques and microfabricated platforms) have led to new insights on phonon transport and scattering in materials and the discovery of new thermal materials, and are enabling the engineering of phonons towards desired thermal properties. We review recent discoveries of both inorganic and organic materials with ultrahigh and low thermal conductivity, highlighting heat-conduction physics, strategies used to change thermal conductivity, and future directions to achieve extreme thermal conductivities in solid-state materials.

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge₂Sb₂Te₅ (GST); however, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such an SL. Here we explore the electrical and thermal transport of SLs with deposited Sb₂Te₃ and GeTe alternating layers of various thicknesses. We find up to an approximately four-fold reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared with polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (∼2000×) between the in-plane and cross-plane directions due to the weakly interacting van der Waals-like gaps. This work uncovers electrothermal transport in SLs based on Sb₂Te₃ and GeTe for the improved design of low-power PCM.

Thermal conductivity and interfacial thermal resistance behavior for the polyaniline-boron carbide heterostructure

In this paper, by employing non-equilibrium molecular dynamics simulations (NEMD), the thermal conductance of the hybrid formed by polyaniline (C3N) and boron carbide (BC3) in both the armchair and zigzag configurations has been investigated. For this purpose, by creating superlattices with different periodic lengths (lp), the thermal conductivity of the entire hybrid at various lengths and also at infinity has been reported. In addition, the thermal conductivity of each sheet and also the interface thermal resistance (ITR) between them under various conditions have been computed and how this changes upon varying the length, width, temperature, uniaxial strain, point vacancy, and circular defects has been recorded and plotted. Based on our findings, the increasing length of the hybrid results in a higher thermal conductance owing to the higher thermal conductivity of each sheet and the lower amount of ITR. However, altering the width does not have a noticeable effect on the thermal transport if the periodic boundary conditions are applied. Moreover, the results revealed that the rising temperature and uniaxial strain reduced the thermal conductivity of each sheet, whereas the ITR increased by increasing the temperature. Also, studying the effect of the presence of defects on the thermal transport demonstrated that increasing the size of the defects or the density leads to considerably lower thermal conductivity of each sheet and also a higher ITR. Our results also revealed the thermal conductivity of hybrid C3N-BC3 can reach 506 W m-1 K-1, which is higher in comparison to other two-dimensional hybrid materials. This result provides valuable information on the thermal transport and phonon behavior for use in nanoelectronic and thermoelectric devices.

Signatures of Coherent Phonon Transport in Ultralow Thermal Conductivity Two-Dimensional Ruddlesden-Popper Phase Perovskites

An emerging class of methylammonium lead iodide (MAPbI₃)-based Ruddlesden-Popper (RP) phase perovskites, BA₂MA_n-1Pb_nI_3n+1 (n = 1-7), exhibit enhanced stability to environmental conditions relative to MAPbI₃, yet still degrade at elevated temperatures. We experimentally determine the thermal conductivities of these layered RP phases for n = 1-6, where n defines the number of repeated perovskite octahedra per layer. We measure thermal conductivities of 0.37 ± 0.13/0.12, 0.17 ± 0.08/0.07, 0.21 ± 0.05/0.04, and 0.19 ± 0.04/0.03 W/m·K in thin films of n = 1-4 and 0.08 ± 0.06/0.04, 0.06 ± 0.04/0.03, 0.06 ± 0.03/0.03, and 0.08 ± 0.07/0.04 W/m·K in single crystals of n = 3-6. With the exception of n = 1, these thermal conductivities are lower than the range of 0.34-0.50 W/m·K reported for single-crystal MAPbI₃. Reduced-order lattice dynamics modeling suggests that the initially decreasing trend of thermal conductivity in similarly oriented perovskites with increasing n may result from the transport properties of coherent phonons, emergent from the superstructure, that do not scatter at the interfaces of organic butylammonium chains and perovskite octahedra. Reduced group velocity of coherent phonons in n = 3-6, a consequence of band flattening in the phonon dispersion, is primarily responsible for their ultralow thermal conductivities. Similar effects on thermal conductivity have been experimentally demonstrated in deposited superlattices, but never in naturally defined materials such as RP phases. GIWAXS measurements reveal that higher n RP phase thin films are less orientationally controlled and therefore possess apparently elevated thermal conductivities relative to single crystals of the same n.

Thickness-Independent Vibrational Thermal Conductance across Confined Solid-Solution Thin Films

We experimentally show that the thermal conductance across confined solid-solution crystalline thin films between parent materials does not necessarily lead to an increase in thermal resistances across the thin-film geometries with increasing film thicknesses, which is counterintuitive to the notion that adding a material serves to increase the total thermal resistance. Confined thin epitaxial Ca_0.5Sr_0.5TiO₃ solid-solution films with systematically varying thicknesses in between two parent perovskite materials of calcium titanate and (001)-oriented strontium titanate are grown, and thermoreflectance techniques are used to accurately measure the thermal boundary conductance across the confined solid-solution films, showing that the thermal resistance does not substantially increase with the addition of solid-solution films with increasing thicknesses from ∼1 to ∼10 nm. Contrary to the macroscopic understanding of thermal transport where adding more material along the heat propagation direction leads to larger thermal resistances, our results potentially offer experimental support to the computationally predicted concept of vibrational matching across interfaces. This concept is based on the fact that a better match in the available heat-carrying vibrations due to an interfacial layer can lead to lower thermal boundary resistances, thus leading to an enhancement in thermal boundary conductance across interfaces driven by the addition of a thin "vibrational bridge" layer between two solids.

Phonon transport in the nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity

Phonon transport in the nano-system has been studied using well-designed nanostructured materials to observe and control the interesting phonon behaviors like ballistic phonon transport. Recently, we observed drastic thermal conductivity reduction in the films containing well-controlled nanodots. Here, we investigate whether this comes from the interference effect in ballistic phonon transport by comparing the thermal properties of the Si or Si0.75Ge0.25 films containing Ge nanodots. The experimentally-obtained thermal resistance of the nanodot layer shows peculiar nanodot size dependence in the Si films and a constant value in the SiGe films. From the phonon simulation results, interestingly, it is clearly found that in the nanostructured Si film, phonons travel in a non-diffusive way (ballistic phonon transport). On the other hand, in the nanostructured SiGe film, although simple diffusive phonon transport occurs, extremely-low thermal conductivity (∼0.81 W m-1 K-1) close to that of amorphous Si0.7Ge0.3 (∼0.7 W m-1 K-1) is achieved due to the combination of the alloy phonon scattering and Ge nanodot scattering.

Strategies for Manipulating Phonon Transport in Solids

In this review, we summarize the recent efforts on manipulating phonon transport in solids by using specific techniques that modify their phonon thermal conductivity (i.e., specific heat, phonon group velocity, and mean free path) and phonon thermal conductance (i.e., transmission probability and density of states). The strategies discussed for tuning thermal conductivity are as follows: large unit cell approach and liquid-like conduction for maneuvering specific heat; rattler, mini-bandgap, and phonon confinement for manipulating phonon group velocity; nanoparticles, nanosized grains, coated grains, alloy (isotope) scattering, selection rules in phonon dispersion, Grüneisen parameter, lone-pair electronics, dynamic disorder, and local static distortion for restricting mean free path. We have also included the discussion on tuning phonon thermal conductance, as thermal conduction can be viewed as a transmission process. Additionally, phonon filtering, ballistic transport, and waveguiding are discussed to alter density of states and transmission probability. We hope this review can bring meaningful insights to the researchers in the field of phonon transport in solids.

Complex temperature dependence of coherent and incoherent lattice thermal transport in superlattices

Currently, it is still unclear how and to what extent a change in temperature impacts the relative contributions of coherent and incoherent phonons to thermal transport in superlattices. Some seemingly conflicting computational and experimental observations of the temperature dependence of lattice thermal conductivity make the coherent-incoherent thermal transport behaviors in superlattices even more elusive. In this work, we demonstrate that incoherent phonon contribution to thermal transport in superlattices increases as the temperature increases due to elevated inelastic interfacial transmission. On the other hand, the coherent phonon contribution decreases at higher temperatures due to elevated anharmonic scattering. The competition between these two conflicting mechanisms can lead to different trends of lattice thermal conductivity as temperature increases, i.e. increasing, decreasing, or non-monotonic. Finally, we demonstrate that the neural network-based machine learning model can well capture the coherent-incoherent transition of lattice thermal transport in the superlattice, which can greatly aid the understanding and optimization of thermal transport properties of superlattices.

Lattice thermal transport in two-dimensional alloys and fractal heterostructures

Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of [Formula: see text] monolayer crystals including [Formula: see text] alloys with substitutional point defects, periodic [Formula: see text] heterostructures with characteristic length scales and scale-free fractal [Formula: see text] heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.

Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review

Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.

Topochemical conversion of the discontinuous-zone-axis to form bismuth titanate oriented polycrystal nanocomposites

A topochemical transformation of discontinuous band axis has been found in the preparation of bismuth titanate.