Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias

Colossal Zero-Field-Cooled Exchange Bias via Tuning Compensated Ferrimagnetic in Kagome Metals

Exchange bias (EB) is a crucial property with widespread applications but particularly occurs by complex interfacial magnetic interactions after field cooling. To date, intrinsic zero-field-cooled EB (ZEB) has only emerged in a few bulk frustrated systems and their magnitudes remain small yet. Here, enabled by high temperature synthesis, we uncover a colossal ZEB field of 4.95 kOe via tuning compensated ferrimagnetism in a family of kagome metals, which is almost twice the magnitude of known materials. Atomic-scale structure, spin dynamics, and magnetic theory revealed that these compensated ferrimagnets originate from significant antiferromagnetic exchange interactions embedded in the holmium-iron ferrimagnetic matrix due to supersaturated preferential manganese doping. A random antiferromagnetic order of manganese sublattice sandwiched between ferromagnetic iron kagome bilayers accounts for such unconventional pinning. The outcome of the present study outlines disorder-induced giant bulk ZEB and coercivity in layered frustrated systems.

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures

High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic La0.7Sr0.3MnO3 layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices.

A Giant Exchange Bias Effect Due to Enhanced Ferromagnetism Using a Mixed Martensitic Phase in Ni50Mn37Ga13 Spun Ribbons

The structure of a material is an important factor in determining its physical properties. Here, we adjust the structure of the Ni50Mn37Ga13 spun ribbons by changing the wheel speed to regulate the exchange bias effect of the material. The characterization results of micromorphology and structure show that as the wheel speed increases, the martensite lath decreases from 200 nm to 50 nm, the structure changed from the NM to a NM and 10M mixed martensitic structure containing mainly NM, then changed to NM and 10M where 10M and NM are approaching. Meanwhile, HE first increased and then decreased as the wheel speed increased. The optimum exchange bias effect (HE = 7.2 kOe) occurs when the wheel speed is 25 m∙s-1, mainly attributed to the enhanced ferromagnetism caused by part of 10M in NM martensite, which enhanced the exchange coupling of ferromagnetism and antiferromagnetism. This work reveals the structural dependence of exchange bias and provides a way to tune the magnitude of the exchange bias of Heusler alloys.

Giant unilateral electric-field control of magnetic anisotropy in MgO/Rh2CoSb heterojunctions

A large voltage-controlled magnetic anisotropy (VCMA) effect is highly desirable for applications of voltage-torque magnetic random access memory. In this work, the dependence of magnetic anisotropy (MA) on the electric field in a MgO-based heterojunction consisting of a new Heusler alloy, Rh2CoSb, is studied using first-principles calculations. We find that the Rh-terminated MgO/Rh2CoSb heterojunction has a perpendicular MA and a giant VCMA coefficient of 7024 fJ V-1 m-1. Furthermore, the VCMA coefficient shows a characteristic of dependence on the electric-field direction. The origins of these behaviors are elucidated by orbital-resolved MA and second-order perturbation theoretical analysis. As the spin-down states of the in-plane orbital, dxy, are close to the Fermi level, the shift of these states induced by the electric field gives rise to significant changes of magnetic anisotropy energy, which is mainly responsible for the giant VCMA effect.

Giant Exchange-Bias-Like Effect at Low Cooling Fields Induced by Pinned Magnetic Domains in Y2 NiIrO6 Double Perovskite

Exchange bias (EB) is highly desirable for widespread technologies. Generally, conventional exchange-bias heterojunctions require excessively large cooling fields for sufficient bias fields, which are generated by pinned spins at the interface of ferromagnetic and antiferromagnetic layers. It is crucial for applicability to obtain considerable exchange-bias fields with minimum cooling fields. Here, an exchange-bias-like effect is reported in a double perovskite, Y₂ NiIrO₆ , which shows long-range ferrimagnetic ordering below 192 K. It displays a giant bias-like field of 1.1 T with a cooling field of only 15 Oe at 5 K. This robust phenomenon appears below 170 K. This fascinating bias-like effect is the secondary effect of the vertical shifts of the magnetic loops, which is attributed to the pinned magnetic domains due to the combination of strong spin-orbit coupling on Ir, and antiferromagnetically coupled Ni- and Ir-sublattices. The pinned moments in Y₂ NiIrO₆ are present throughout the full volume, not just at the interface as in conventional bilayer systems.

Nearly compensated ferrimagnetic behaviour and giant exchange bias of hexagonal Mn2PtAl: experimental and theoretical studies

We have investigated the Mn₂PtAl Heulser alloy to unravel its structural, magnetic, calorimetric and electronic structure properties. At room temperature, the alloy crystallizes in a hexagonal structure. Magnetization reveals a weak martensitic transition at 307 K, followed by a long range ferrimagnetic transition at 90 K. Griffiths phase-like signature and positive Weiss temperature in dc-magnetization, isothermal magnetic hysteresis loops and a frequency-independent peak confirm a nearly compensated ferrimagnetic order of Mn₂PtAl. The theoretical electronic structure calculations also reveal the ferrimagnetic ground state of Mn₂PtAl and Mn ions (occupying different sites) with a very small total magnetic moment. A giant exchange bias field of 2.73 kOe, at a temperature of 3 K and a cooling field of 70 kOe, has been estimated and is attributed to the unidirectional anisotropy associated with possible ferromagnetic clusters formed by the field cooling process in the ferrimagnetic matrix.

Canonical Spin Glass and the Anomalous Hall Effect in a Centrosymmetric Ferrimagnet

Centrosymmetric ferro/ferrimagnets provide an ideal arena for fundamental research due to their fascinating magnetic and structural characters. In this work, the Co_0.8MnSn compound with a single hexagonal phase was successfully synthesized, and the magnetic phase transition and magnetic and electronic properties have been systematically investigated. Interestingly, Arrott plots and normalized magnetic entropy changes derived from the isothermal magnetizing curves may imply the first-order nature of the magnetic ordering transition around T_C ∼ 121 K. The AC susceptibility analysis and detailed nonequilibrium dynamical studies (including magnetic aging, rejuvenation, and memory effects) reveal the canonical spin-glass state of Co_0.8MnSn at lower temperature. Further, negative magnetoresistance and the anomalous Hall effect dominated by a commonly intrinsic term are obtained. Moreover, the field-dependent AC susceptibility data indicated that complicated and nontrivial magnetic spin textures should exist in the compound. These studies may open up further research opportunities in exploring emergent physical phenomena and potential applications in centrosymmetric magnets.

Fabrication and Magneto-Structural Properties of Co2-Based Heusler Alloy Glass-Coated Microwires with High Curie Temperature

In this work, we were able to produce Co2FeSi Heusler alloy glass-covered microwires with a metallic nucleus diameter of about 4.4 µm and total sample diameter of about 17.6 μm by the Taylor–Ulitovsky Technique. This low cost and single step fabrication process allowed the preparation of up to kilometers long glass-coated microwires starting from a few grams of high purity inexpensive elements (Co, Fe and Si), for a wide range of applications. From the X-ray diffraction, XRD, analysis of the metallic nucleus, it was shown that the structure consists of a mixture of crystalline and amorphous phases. The single and wide crystalline peak was attributed to a L21 crystalline structure (5.640 Å), with a possible B2 disorder. In addition, nanocrystalline structure with an average grain size, Dg = 17.8 nm, and crystalline phase content of about 52% was obtained. The magnetic measurements indicated a well-defined magnetic anisotropy for all ranges of temperature. Moreover, soft magnetic behavior was observed for the temperature measuring range of 5–1000 K. Strong dependence of the magnetic properties on the applied magnetic field and temperature was observed. Zero field cooling and field cooling magnetization curves showed large irreversibility magnetic behavior with a blocking temperature (TB = 205 K). The in-plane magnetization remanence and coercivity showed quite different behavior with temperature, due to the existence of different magnetic phases induced from the internal stress created by the glass-coated layer. Moreover, a high Curie temperature was reported (Tc ≈ 1059 K), which predisposes this material to being a suitable candidate for high temperature spintronic applications.

Influence of Symmetry from Crystal Structure and Chemical Environments of Magnetic Ions on the Fully Compensated Ferrimagnetism of Full Heusler Cr2YZ and Mn2YZ Alloys

Fully compensated ferrimagnets do not create any magnetic stray field and allow for a completely polarized current of charges. As a result, these alloys show promising prospects for applications as spintronic devices. In this paper, we investigated the phase stability, the site preference, the tetragonal distortion and the influence of symmetry from the crystal structure and chemical environments of magnetic ions on the magnetic properties of Cr2YZ and Mn2YZ (Y = void, Ni, Cu, and Zn; Z = Ga, Ge, and As) full Heusler alloys by first-principles calculations. We found that the selected Cr2-based alloys, except for Cr2NiGa and Cr2NiGe, prefer to crystallize in the centrosymmetric L21-type structure, while the selected Mn2-based alloys, except for Mn2CuAs, Mn2ZnGe and Mn2ZnAs, tend to crystallize in the non-centrosymmetric XA-type structure. Due to the symmetry, the antiferromagnetism of the selected L21-type alloys is very stable, and no spin-polarized density of states could be generated. In contrast, the magnetic moment of the selected XA-type alloys depends heavily on the number of valence electrons and tetragonal distortion, and spin-polarized density of states is generated. Therefore, the selected alloys with L21-type structures and their tetragonal-distorted structure are potential candidates for conventional antiferromagnets, while those with XA-type structure and their tetragonal-distorted structure are promising candidates for (fully) compensated ferrimagnets.

Observation of Exchange Bias in Antiferromagnetic Cr0.79Se Due to the Coexistence of Itinerant Weak Ferromagnetism at Low Temperatures

We report on the structural, electrical transport, and magnetic properties of antiferromagnetic transition-metal monochalcogenide Cr0.79Se. Different from the existing off-stoichiometric compositions, Cr0.79Se is found to be synthesized into the same NiAs-type hexagonal crystal structure as that of CrSe. Resistivity data suggest Cr0.79Se to be a Fermi-liquid-type metal at low temperatures, while at intermediate temperatures, the resistivity depends sublinearly on the temperature. Eventually, at elevated temperatures, the rate of change of resistivity rapidly decreases with increasing temperature. Magnetic measurements suggest a transition from the paramagnetic phase to an antiferromagnetic phase at a Néel temperature of 225 K. Further reduction of the sample temperature results in the coexistence of weak ferromagnetism along with the antiferromagnetic phase below 100 K. As a result, below 100 K, we identify a significant exchange bias due to the interaction between the ferro- and antiferromagnetic phases. In addition, from temperature-dependent X-ray diffraction measurements, we observe that the NiAs-type structure is stable up to as high as 600 °C.

Kinetic arrest of the ferromagnetic state in Mn[Formula: see text]GaC and Ni[Formula: see text]MnGa composite mixtures

The kinetics of the ferromagnetic to antiferromagnetic transition in Mn[Formula: see text]GaC can be arrested and its magnetic properties can be tuned by mixing a small amount ([Formula: see text] 10%) of Heusler Ni[Formula: see text]MnGa to Mn[Formula: see text]GaC. A detailed study of magnetic properties of composite mixtures of Mn[Formula: see text]GaC and Ni[Formula: see text]MnGa with different antiperovskite to Heusler ratio, reveals that the ferromagnetic Ni[Formula: see text]MnGa polarizes magnetic spins of the antiperovskite phase by creating a magnetic strain field in its vicinity. The Heusler phase acts as a defect centre whose influence on the magnetic properties of the majority antiperovskite phase progressively diminishes, creating a distribution of transition temperatures. Such strong interaction between the two phases of the mixture allows for tunability and control over the properties of such magneto-structurally transforming materials.

Direct and Indirect Determination of the Magnetocaloric Effect in the Heusler Compound Ni1.7Pt0.3MnGa

Magnetic shape-memory materials are potential magnetic refrigerants, due the caloric properties of their magnetic-field-induced martensitic transformation. The first-order nature of the martensitic transition may be the origin of hysteresis effects that can hinder practical applications. Moreover, the presence of latent heat in these transitions requires direct methods to measure the entropy and to correctly analyze the magnetocaloric effect. Here, we investigated the magnetocaloric effect in the Heusler material Ni1.7Pt0.3MnGa by combining an indirect approach to determine the entropy change from isofield magnetization curves and direct heat-flow measurements using a Peltier calorimeter. Our results demonstrate that the magnetic entropy change ΔS in the vicinity of the first-order martensitic phase transition depends on the measuring method and is directly connected with the temperature and field history of the experimental processes.

Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films

Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

Microstructures and Interface Magnetic Moments in Mn2VAl/Fe Layered Films Showing Exchange Bias

Heusler alloys are a material class exhibiting various magnetic properties, including antiferromagnetism. A typical application of antiferromagnets is exchange bias that is a shift of the magnetization curve observed in a layered structure consisting of antiferromagnetic and ferromagnetic films. In this study, a layered sample consisting of a Heusler alloy, Mn2VAl and a ferromagnet, Fe, is selected as a material system exhibiting exchange bias. Although the fully ordered Mn2VAl is known as a ferrimagnet, with an optimum fabrication condition for the Mn2VAl layer, the Mn2VAl/Fe layered structure exhibits exchange bias. The appearance of the antiferromagnetic property in the Mn2VAl is remarkable; however, the details have been unclear. To clarify the microscopic aspects on the crystal structures and magnetic moments around the Mn2VAl/Fe interface, cross-sectional scanning transmission electron microscope (STEM) observation, and synchrotron soft X-ray magnetic circular dichroism (XMCD) measurements were employed. The high-angle annular dark-field STEM images demonstrated clusters of Mn2VAl with the L21 phase distributed only around the interface to the Fe layer in the sample showing the exchange bias. Furthermore, antiferromagnetic coupling between the Mn- and Fe-moments were observed in element-specific hysteresis loops measured using the XMCD. The locally ordered L21 phase and antiferromagnetic Mn-moments in the Mn2VAl were suggested as important factors for the exchange bias.

Heusler alloys for spintronic devices: review on recent development and future perspectives

Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

A New Highly Anisotropic Rh-Based Heusler Compound for Magnetic Recording

The development of high-density magnetic recording media is limited by superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat-assisted magnetic recording was developed, rapidly heating the media to the Curie temperature T_c before writing, followed by rapid cooling. Requirements are a suitable T_c , coupled with anisotropic thermal conductivity and hard magnetic properties. Here, Rh₂ CoSb is introduced as a new hard magnet with potential for thin-film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJ m^-3 is combined with a saturation magnetization of μ₀ M_s  = 0.52 T at 2 K (2.2 MJ m^-3 and 0.44 T at room temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth-free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 μ_B on Co, which is hybridized with neighboring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature dependence of the anisotropy that follows from its T_c of 450 K, together with a thermal conductivity of 20 W m^-1 K^-1 , make Rh₂ CoSb a candidate for the development of heat-assisted writing with a recording density in excess of 10 Tb in.^-2 .

Glassy Magnetic Transitions and Accurate Estimation of Magnetocaloric Effect in Ni-Mn Heusler Alloys

In this work, the structural and magnetic transitions of Heusler alloy Ni₅₀Mn₃₄In₁₄Ga₂ have been carefully studied through measurements of heat flow and magnetization under DC and AC magnetic fields. This alloy undergoes the transition sequence of spin-glassy martensite (SPM) → ferromagnetic austenite (FA) → paramagnetic austenite at ∼225 and ∼305 K, respectively, during heating. Splitting of zero-field-cooling (ZFC)/field-cooling (FC) curves in martensite is caused by the slowdown dynamics of spin glass as evidenced by frequency dispersion and aging effects. The development of a spin-glass state is believed to be the result of strain relaxation and interaction of ferroelastic twin walls in the martensite. The magnetocaloric effect (MCE) at the SPM-FA transition was then measured using indirect, quasi-direct, and direct methods. The MCE magnitudes are controlled by the entropy changes associated with the first-order martensite transition and magnetic ordering of austenite under the magnetic field. The existence of a spin-glass state in martensite can also improve the reversibility of the magnetostructural transitions, which is beneficial for the improvement of the reversibility of associated MCE. These results provide an in-depth understanding of the transitions and magnetic properties of the Ni-Mn Heusler alloys and suggest that the MCE at the first-order magnetostructural transitions estimated solely using indirect methods may need some revision.

Exchange-bias via nanosegregation in novel Fe2-x Mn1+x Al (x = -0.25, 0, 0.25) Heusler films

Exchange-bias has been reported in bulk nanocrystalline Fe₂MnAl, but individual thin films of this Heusler alloy have never been studied so far. Here we study the structural and magnetic properties of nanocrystalline thin films of Fe_2-x Mn_1+x Al (x = -0.25, 0 and 0.25) obtained by sputtering and ex situ post-deposition annealing. We find that Fe₂MnAl films display exchange-bias, and that varying Mn concentration determines the magnitude of the effect, which can be either enhanced (in Fe_1.75Mn_1.25Al) or suppressed (in Fe_2.25Mn_0.75Al). X-ray diffraction shows that our films present a mixed L2₁-B2 Heusler structure where increasing Mn concentration favors the partial transformation of the L2₁ phase into the B2 phase. Scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX) reveal that this composition-driven L2₁ → B2 transformation is accompanied by phase segregation at the nanoscale. As a result, the Fe_2-x Mn_1+x Al films that show exchange-bias (x = 0, 0.25) are heterogeneous, with nanograins of an Fe-rich phase embedded in a Mn-rich matrix (a non-negative matrix factorisation algorithm was used to give an indication of the phase composition from EDX data). Our comparative analysis of XRD, magnetometry and X-ray magnetic circular dichroism (XMCD), shows that the Fe-rich nanograins and Mn-rich matrix are composed of a ferromagnetic L2₁ phase and an antiferromagnetic B2 phase, respectively, thus revealing that exchange-coupling between these two phases is the cause of the exchange-bias effect. Our work should inspire the development of single-layer, environmentally friendly spin valve devices based on nanocomposite Heusler films.

Coupling between phase transitions and glassy magnetic behaviour in Heusler alloy Ni50Mn34In8Ga8

The transition sequence in the Heusler alloy Ni50Mn34In8Ga8has been determined from measurements of elasticity, heat flow and magnetism to be paramagnetic austenite → paramagnetic martensite → ferromagnetic martensite at ∼335 and ∼260 K, respectively, during cooling. The overall pattern of elastic stiffening/softening and acoustic loss is typical of a system with bilinear coupling between symmetry breaking strain and the driving structural/electronic order parameter, and a temperature interval below the transition point in which ferroelastic twin walls remain mobile under the influence of external stress. Divergence between zero-field-cooling and field-cooling determinations of DC magnetisation below ∼220 K indicates that a frustrated magnetic glass develops in the ferromagnetic martensite. An AC magnetic anomaly which shows Vogel-Fulcher dynamics in the vicinity of ∼160 K is evidence of a further glassy freezing process. This coincides with an acoustic loss peak and slight elastic stiffening that is typical of the outcome of freezing of ferroelastic twin walls. The results suggest that local strain variations associated with the ferroelastic twin walls couple with local moments to induce glassy magnetic behaviour.

Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures

The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe₃GeTe₂)/AFM (CrPS₄) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS₄ is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS₄ allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.

Evidence of anomalous conventional and spontaneous exchange bias, high coercivity in Fe doped NiCr2O4 spinel

NiCr2-xFexO4 (x = 0 and 0.2) polycrystalline ceramics have been synthesized successfully through a simple co-precipitation technique to study the evolution of structural and magnetic properties by doping Fe. X-ray diffraction (XRD) reveals that the high-temperature cubic phase (space group Fd3[combining macron]m) observed at 320 K in bulk NiCr2O4 is stabilized at room temperature by decreasing the particle size to nanometer in x = 0 as well as after incorporating 20 at% Fe in the NiCr2O4 lattice. The cation distribution obtained from X-ray absorption fine structure (XAFS) analysis illustrates that while in x = 0, Ni2+ and Cr3+ ions occupy the tetrahedral (A) and octahedral (B) sites, respectively, x = 0.2, Fe3+ and Cr3+ ions occupy the A and B sites, respectively, and Ni2+ ions are distributed among the A and B sites. This transformation from the normal to mixed spinel structure strongly affects the magnetic properties. While the paramagnetic to long-range ferrimagnetic ordering temperature TC is enhanced from 71 to 192 K, significantly large coercive field (HC) of ∼29 kOe is observed for x = 0.2 as compared to the HC ∼13 kOe for x = 0. Moreover, unusually large conventional and spontaneous exchange bias fields of ∼26 and ∼2.6 kOe are observed for x = 0.2, which is absent for x = 0. The presence of anomalous exchange bias field is ascribed to the unidirectional exchange anisotropy between the two magnetic sublattices at A and B sites. The training effect of the exchange bias field is discussed using a phenomenological model, which considers the contribution from irreversible uncompensated spins that modify the exchange anisotropy at the interface between A and B magnetic sublattices. In addition, diffuse neutron scattering (DNS) with XYZ analysis is employed for both compositions to clearly illustrate the low-temperature peculiar magnetic phase transitions such as spin spiral transition, TS and spin lock-in transition, Tl. The DNS demonstrates that while Tl decreases from 10 K to 7 K with the incorporation of Fe in the NiCr2O4 lattice, TS significantly increases from 28 K to 50 K.

Half-metallicity in new Heusler alloys Mn2ScZ (Z = Si, Ge, Sn)

Study of half-metallicity has been performed in a new series of Mn₂ScZ (Z = Si, Ge and Sn) full Heusler alloys using density functional theory with the calculation and implementation of a Hubbard correction term (U). Volume optimization in magnetic and non-magnetic phases for both the Cu₂MnAl and Hg₂CuTi type structures was done to predict the stable ground state configuration. The stability was determined by calculating their formation energy as well as from elastic constants under ambient conditions. A half-metal is predicted for Mn₂ScSi and Mn₂ScGe with a narrow band gap in the minority spin whereas Mn₂ScSn shows a metallic nature. The magnetic moments of Mn and Sc are coupled in opposite directions with different strengths indicating that the ferrimagnetic order and the total magnetic moment per formula unit for half-metals follows the Slater Pauling rule. And a strong effect was shown by the size of the Z element in the electronic and magnetic properties.

Study of half-metallicity has been performed in a new series of Mn₂ScZ (Z = Si, Ge and Sn) full Heusler alloys using density functional theory with the calculation and implementation of a Hubbard correction term (U).

Mechanically tunable exchange coupling of Co/CoO bilayers on flexible muscovite substrates

The employment of flexible muscovite substrates has given us the feasibility of applying strain to heterostructures dynamically by mechanical bending. In this study, this novel approach is utilized to investigate strain effects on the exchange coupling in ferromagnetic Co and anti-ferromagnetic CoO (Co/CoO) bilayers. Two different Co/CoO bilayer heterostructures were grown on muscovite substrates by oxide molecular beam epitaxy, with the CoO layer being purely (111)- and (100)-oriented. The strain-dependent exchange coupling effect can only be observed on Co/CoO(100)/mica but not on Co/CoO(111)/mica. The origin of this phenomenon is attributed to the anisotropic spin re-orientation induced by mechanical bending. The strain-dependent magnetic anisotropy of the bilayers determined by anisotropic magnetoresistance measurements confirms this conjecture. This study elucidates the fundamental understanding of how magnetic exchange coupling can be tuned by externally applied strain via mechanical bending and, hence, provides a novel approach for implementing flexible spintronic devices.

Exchange biased anomalous Hall effect driven by frustration in a magnetic kagome lattice

Co[Formula: see text]Sn[Formula: see text]S[Formula: see text] is a ferromagnetic Weyl semimetal that has been the subject of intense scientific interest due to its large anomalous Hall effect. We show that the coupling of this material's topological properties to its magnetic texture leads to a strongly exchange biased anomalous Hall effect. We argue that this is likely caused by the coexistence of ferromagnetism and geometric frustration intrinsic to the kagome network of magnetic ions, giving rise to spin-glass behavior and an exchange bias.

Magnetism of 3d and 4d doped Mn0.7T0.3NiGe (T = Fe, Co, Ru and Rh): bulk magnetization and ab initio calculations

We compare the magnetic properties of 3d (Fe and Co) and 4d (Ru and Rh) transition metals doped MnNiGe using the combined results of magnetization and ab initio calculations. The alloys crystallize in austenite Ni₂In-type hexagonal phase (space group: P6₃/mmc) with insignificant difference in the lattice parameters. Mn_0.7Fe_0.3NiGe and Mn_0.7Co_0.3NiGe exhibit spin-glass behavior, resulting from the competing ferro- and antiferromagnetic interactions. These alloys exhibit spontaneous exchange bias field of about [Formula: see text] Oe and 323 Oe, respectively. From the 4d-metal doped alloys, Mn_0.7Ru_0.3NiGe shows glassy behavior while long-range ferromagnetic order is confirmed in Mn_0.7Rh_0.3NiGe. In Mn_0.7Rh_0.3NiGe, in agreement with experiment and the theoretical calculations, the ground state is confirmed to be ferromagnetic because of the FM exchange interactions of the Mn magnetic moments. But in Mn_1-x (Fe,Co,Ru) _x NiGe alloys the calculations revealed the competing and comparable FM and AFM exchange interaction parameters, resulting in the formation of spin-glassy characteristics.

Extremely Large Non-equilibrium Tunnel Magnetoresistance Ratio in CoRhMnGe Based Magnetic Tunnel Junction by Interface Modification

Equiatomic quaternary Heusler compounds (EQHCs) generally have the advantages of high Curie temperature, large spin polarization and long spin diffusion length, and they are regarded as one of the most promising candidates for spintronics devices. Herein, we report a theoretical investigation on an EQHC CoRhMnGe based magnetic tunnel junction (MTJ) with (i) MnGe-terminated interface and (ii) modified pure Mn terminated interface, i.e., MnMn-terminated interface. By employing first principle calculations combined with non-equilibrium Green's function, the local density of states (LDOS), transmission coefficient, spin-polarized current, tunnel magnetoresistance (TMR) ratio and spin injection efficiency (SIE) as a function of bias voltage are studied. It reveals that when the MTJ under equilibrium state, TMR ratio of MnGe-terminated structure is as high as 3,438%. When the MTJ is modified to MnMn-terminated interface, TMR ratio at equilibrium is enhanced to 2 × 10⁵%, and spin filtering effects are also strengthened. When bias voltage is applied to the MTJ, the TMR ratio of the MnGe-terminated structure suffers a dramatic loss. While the modified MnMn-terminated structure could preserve a large TMR value of 1 × 10⁵%, even bias voltage rises up to 0.1 V, showing a robust bias endurance. These excellent spin transport properties make the CoRhMnGe a promising candidate material for spintronics devices.

Cooling-field dependence of dipole-induced loop bias

In ferromagnet/antiferromagnet bilayers and core/shell nanoparticles, an exchange-bias-like loop bias phenomenon in the ferromagnet is observed solely due to the long-range dipolar interactions between ferromagnet and antiferromagnet. With increasing cooling field, the loop bias field may increase from zero in the bilayers or from a negative value in the core/shell nanoparticles to a positive saturated value, depending on the interfacial dipolar interaction and/or ferromagnetic/antiferromagnetic thickness. Using a modified Monte-Carlo method and the Meiklejohn-Bean model, the interfacial dipole fields (up to several teslas) and the domain sizes imprinted on the interfacial antiferromagnet are explicitly calculated to elucidate the cooling field dependence of loop bias, which is governed by distinct mechanisms at the flat and curved interfaces. Finally, through simply discussing the roles of lattice structure, ferromagnetic dipolar interaction, and simulation time, it is evidenced that the dipole-induced loop bias is ubiquitous and applicable for stabilizing a ferromagnet, irrespective of the interface mismatch and the undeterministic diffusion between different ingredients. This work helps us to develop the spintronic devices with nonatomic-contact nanostructure assemblies.

Half-metallic fully compensated ferrimagnetism and multifunctional spin transport properties of Mn3Al

The complete (100%) spin polarization, zero net magnetic moment and high Curie temperature (605 K) make the recently fabricated half-metallic fully compensated ferrimagnet Mn₃Al a promising spintronic material. In order to explore the potential applications in spintronic devices, in this work, we give a theoretical analysis for the Mn₃Al/GaAs(0 0 1) heterostructure and the Mn₃Al/GaAs/Mn₃Al(0 0 1) magnetic tunnel junction. Using the first-principles calculations combined with nonequilibrium Green's function method, we demonstrate from the calculated bias-dependent spin transport properties that the heterostructure exhibits perfect spin filtering effect and spin diode effect, and the magnetic tunnel junction behaves a large tunnel magnetoresistance ratio (up to 10 900%). The physical origins of these versatile spin transport properties are discussed in terms of the half-metallic band structure, the spin-dependent transmission spectra and the band-to-band transmission theory.

Tuning the Exchange Bias on a Single Atom from 1 mT to 10 T

Shrinking spintronic devices to the nanoscale ultimately requires localized control of individual atomic magnetic moments. At these length scales, the exchange interaction plays important roles, such as in the stabilization of spin-quantization axes, the production of spin frustration, and creation of magnetic ordering. Here, we demonstrate the precise control of the exchange bias experienced by a single atom on a surface, covering an energy range of 4 orders of magnitude. The exchange interaction is continuously tunable from milli-eV to micro-eV by adjusting the separation between a spin-1/2 atom on a surface and the magnetic tip of a scanning tunneling microscope. We seamlessly combine inelastic electron tunneling spectroscopy and electron spin resonance to map out the different energy scales. This control of exchange bias over a wide span of energies provides versatile control of spin states, with applications ranging from precise tuning of quantum state properties, to strong exchange bias for local spin doping. In addition, we show that a time-varying exchange interaction generates a localized ac magnetic field that resonantly drives the surface spin. The static and dynamic control of the exchange interaction at the atomic scale provides a new tool to tune the quantum states of coupled-spin systems.

Revelation of spin glass behavior in Ru doped MnNiGe: experiment and theory

We report on the nature of the magnetism in Ru substituted MnNiGe using the combined results of x-ray diffraction, dc-magnetization, ac-susceptibility and ab initio calculations. Mn_0.7Ru_0.3NiGe crystallizes in Ni₂In-type hexagonal structure (P6₃/mmc) at room temperature with lattice parameters a  =  b  =  4.099 [Formula: see text] and c  =  5.367 [Formula: see text]. From the dc-magnetization; a broad peak around 46.55 K, separation between zero-field cooled and field-cooled warming state and non-saturating isothermal magnetization with typical S-type hysteresis indicate glassy behavior. A cusp in [Formula: see text] is observed to shift toward high temperatures with increasing frequency. Mydosh parameter ([Formula: see text]), single-relaxation time ([Formula: see text] s) obtained through critical slowing-down analysis, [Formula: see text] from the Vogel-Fulcher law and Tholence criterion [Formula: see text], confirm that Mn_0.7Ru_0.3NiGe belongs to the short-range interaction spin-glass systems with strong coupling between the magnetic clusters. LSDA+U calculations confirmed the competing exchange interactions between large magnetic moments of the Mn ions in Mn_0.7Ru_0.3NiGe compound resulting in the formation of spin-glassy characteristics.

Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metal

Due to its negligible spontaneous magnetization, high spin polarization and giant perpendicular magnetic anisotropy, Mn₂Ru_xGa (MRG) is an ideal candidate as an oscillating layer in THz spin-transfer-torque nano-oscillators. Here, the effect of ultrathin Al and Ta diffusion barriers between MRG and MgO in perpendicular magnetic tunnel junctions is investigated and compared to devices with a bare MRG/MgO interface. Both the compensation temperature, T_comp, of the electrode and the tunneling magnetoresistance (TMR) of the device are highly sensitive to the choice and thickness of the insertion layer used. High-resolution transmission electron microscopy, as well as analysis of the TMR, its bias dependence, and the resistance-area product allow us to compare the devices from a structural and electrical point of view. Al insertion leads to the formation of thicker effective barriers and gives the highest TMR, at the cost of a reduced T_comp. Ta is the superior diffusion barrier which retains T_comp, however, it also leads to a much lower TMR on account of the short spin diffusion length which reduces the tunneling spin polarization. The study shows that fine engineering of the Mn₂Ru_xGa/barrier interface to improve the TMR amplitude is feasible.

High-Magnetization Tetragonal Ferrite-Based Films Induced by Carbon and Oxygen Vacancy Pairs

Herein, a low-temperature thermal decomposition method is utilized to grow new stable tetragonal Fe₃O₄-based thick ferrite films. The tetragonal Fe₃O₄-based film possesses high saturation magnetization of ∼800 emu/cm³. Doping with approximately 10% Co results in a high-energy product of ∼10.9 MGOe with perpendicular magnetocrystalline anisotropy, whereas doping with Ni increases electrical resistivity by a factor of 6 and retains excellent soft magnetic properties (high saturation magnetization and low coercivity). A combined experimental and first-principles study reveals that carbon interstitials (C_i^B) and oxygen vacancies (V_O) form C_i^B-V_O pairs which stabilize the tetragonal phase and enhance saturation magnetization. The magnetization enhancement is further attributed to local ferromagnetic coupling between Fe_A and Fe_B induced by C_i^B-V_O pairs in a tetragonal spinel ferrite lattice.

Exchange Bias in Bulk α - Fe / γ - Fe 70 Mn 30 Nanocomposites for Permanent Magnet Applications

Here we report on the microstructural factors influencing the formation of the interfacial exchange bias effect in three-dimensional transition-metal-based nanocomposite systems, with relevance to permanent magnet applications. Bulk phase-separated nanocomposites consisting of the ferromagnetic α -Fe and metastable antiferromagnetic γ - Fe 70 Mn 30 phases exhibit a notable low-temperature exchange bias and substantial coercivity (H ex = 24.6 kA / m ,H C = 95.7 kA / m ) as well as a near room-temperature blocking temperature. Structural investigation by synchrotron X-ray diffraction, neutron scattering, and transmission electron microscopy confirm that the ferromagnetic α -Fe phase nucleates as small precipitates ( d ≈ 50 nm ) at the grain boundaries of the antiferromagnetic γ - Fe 70 Mn 30 grains ( d = 360 - 740 nm ) and grows anisotropically upon heat treatment, resulting in an elliptical geometry. These results indicate that optimization of the exchange bias effect in bulk nanocomposite systems may be achieved through maximizing the surface-to-volume ratio of ferromagnetic precipitates in an antiferromagnetic matrix, enhancing the magnetocrystalline anisotropy of the antiferromagnetic phase to facilitate interfacial pinning and ensuring a balanced distribution of the ferromagnetic and antiferromagnetic phases. This work further clarifies critical factors influencing the formation of an exchange bias in an inexpensive transition-metal-based bulk nanocomposite system with potential for scalable production.

Spin-Orbit Torque Switching in a Nearly Compensated Heusler Ferrimagnet

Ferrimagnetic materials combine the advantages of the low magnetic moment of an antiferromagnet and the ease of realizing magnetic reading of a ferromagnet. Recently, it was demonstrated that compensated ferrimagnetic half metals can be realized in Heusler alloys, where high spin polarization, zero magnetic moment, and low magnetic damping can be achieved at the same time. In this work, by studying the spin-orbit torque induced switching in the Heusler alloy Mn₂ Ru_{1- x} Ga, it is found that efficient current-induced magnetic switching can be realized in a nearly compensated sample with strong perpendicular anisotropy and large film thickness. This work demonstrates the possibility of employing compensated Heusler alloys for fast, energy-efficient spintronic devices.

Cr2TiC2-based double MXenes: novel 2D bipolar antiferromagnetic semiconductor with gate-controllable spin orientation toward antiferromagnetic spintronics

Antiferromagnetic (AF) spin devices could be one of the representative components for applications of spintronics thanks to the numerous advantages such as resistance to magnetic field perturbation, stray field-free operation, and ultrahigh device operation speed. However, detecting and manipulating the spin of AF materials is still a major challenge due to the absence of a net magnetic moment and spin degeneracy in the band structure. Bipolar antiferromagnetic semiconductors are promising solutions to these problems. Herein, using density functional theory calculations, we present asymmetrical functionalized double MXenes (Cr2TiC2FCl) that behave as a novel bipolar antiferromagnetic semiconductor (BAFS) with vanishing magnetism, in which the valence band and conduction band around the Fermi level exhibit opposite spin directions. Remarkably, gate voltage can manipulate the spin orientation of the AF Cr2TiC2FCl and lead to a transition from BAFS to half-metal antiferromagnets (HMAF). Moreover, the mixed functionalized double MXenes with various F/Cl concentrations show the BAFS feature due to the different chemical environment for the Cr atom. Our results presented herein open a new strategy towards AF spintronics and the realization of the AF spin field effect transistor.

Atomic-scale imaging of the ferrimagnetic/diamagnetic interface in Au-Fe3O4 nanodimers and correlated exchange-bias origin

Exchange-biased magnetic heterostructures have become one of the research frontiers due to their significance in enriching the fundamental knowledge in nanomagnetics and promising diverse applications in the information industry. However, the physical origin of their exchange bias effect is still controversial. A key reason for this is the lack of unequivocal observations of interface growth. In this work, we fill this gap by experimentally imaging the ferrimagnetic/diamagnetic interfaces of Au-Fe₃O₄ nanodimers at the atomic level. A different physical mechanism from the reported mechanisms is found based on the atomic-resolution observation of their interfacial structure and electronic states, which reveals that the antiferromagnetic and ferromagnetic interactions of the formed weak/strong ferrimagnetic bilayer are responsible for the intrinsic exchange-bias origin in Au-Fe₃O₄ nanodimers. The theoretical quantitative analysis of the exchange bias shift based on the observed interfacial occupation model agrees well with the experimental value for the exchange bias effect, strongly verifying the proposed exchange-bias mechanism.

Structural and magnetic properties of bulk Mn2PtSn

Interplay between structural and magnetic order parameters is one of the key mechanisms of tuning properties of materials intended for device applications in spintronics. Here, using density functional calculations, we study combined effects of tetragonal distortion and non-collinear magnetic order in Mn₂PtSn. We show that this material has two energetically close energy minimums corresponding to tetragonal lattice. In one of these phases, Mn₂PtSn exhibits ferrimagnetic order with nearly fully compensated total magnetic moment, while in the other phase that corresponds to the lowest energy, a non-collinear magnetic arrangement emerges, with very large canting angle of the Mn local magnetic moments. The non-collinear alignment is explained through the interplay of exchange couplings between nearest and next nearest neighbor Mn atoms. Results are compared with those reported in recent literature, both experimental and theoretical.

Spin Gapless Semiconductor–Nonmagnetic Semiconductor Transitions in Fe-Doped Ti2CoSi: First-Principle Calculations

Employing first-principle calculations, we investigated the influence of the impurity, Fe atom, on magnetism and electronic structures of Heusler compound Ti2CoSi, which is a spin gapless semiconductor (SGS). When the impurity, Fe atom, intervened, Ti2CoSi lost its SGS property. As TiA atoms (which locate at (0, 0, 0) site) are completely occupied by Fe, the compound converts to half-metallic ferromagnet (HMF) TiFeCoSi. During this SGS→HMF transition, the total magnetic moment linearly decreases as Fe concentration increases, following the Slate–Pauling rule well. When all Co atoms are substituted by Fe, the compound converts to nonmagnetic semiconductor Fe2TiSi. During this HMF→nonmagnetic semiconductor transition, when Fe concentration y ranges from y = 0.125 to y = 0.625, the magnetic moment of Fe atom is positive and linearly decreases, while those of impurity Fe and TiB (which locate at (0.25, 0.25, 0.25) site) are negative and linearly increase. When the impurity Fe concentration reaches up to y = 1, the magnetic moments of Ti, Fe, and Si return to zero, and the compound is a nonmagnetic semiconductor.

Tailoring structural and magnetic properties of Mn3-x Fe x Ga alloys towards multifunctional applications

This study investigated the structural and magnetic properties of Mn3-x Fe x Ga alloys (x = 0, 0.2, 0.4, 0.6, 0.8, 1) under different heat-treatment conditions. A tetragonal structure was observed in samples that were heat treated at 623 K for three days followed by quenching in ice water. These tetragonal alloys present large coercive fields in the range 0.8-5 kOe and low saturation magnetization, and have great potential for application in spin-transfer torque-based devices. A hexagonal structure was observed in samples subjected to heat treatment at 883 K for three days following quenching in ice water. A moderate decrease in the coercive field has been observed for the hexagonal alloys compared with those with a tetragonal structure. However, the Mn3-x Fe x Ga alloys with a hexagonal structure exhibit other attractive magnetic properties, including collinear and non-collinear magnetic properties, holding high promise for technological applications. A face-centred-cubic (f.c.c.) structure was observed when subjected to annealing at 1073 K for three days followed by quenching in ice water. In contrast to the tetragonal and hexagonal structures, all f.c.c. alloys exhibit antiferromagnetic behaviour. This versatile material can display a wide range of multi-functionalities attributed to its tuneable crystal structure. This investigation will guide the design of multiple structures of these materials in order to utilise the wide functionalities for practical applications.

Defect-Induced Exchange Bias in a Single SrRuO3 Layer

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO₃ layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

Tailoring exchange bias in ferro/antiferromagnetic FePt3 bilayers created by He+ beams

We report on artificial exchange bias created in a continuous epitaxial FePt₃ film by introducing chemical disorder using a He⁺ beam, which features tailorable exchange bias strength through post-irradiation annealing. By design, the ferromagnetic (FM)/antiferromagnetic (AF) heterostructure exhibits stratified degrees of chemical order; however, the chemical composition and stoichiometry are invariant throughout the film volume. This uniquely allows for a consideration purely of the magnetic exchange across the FM/AF interface without the added hindrance of structural boundary parameters which inherently affect exchange bias quality. Annealing at 840 K results in the strongest exchange biased system, which displays a cross-sectional morphology of fine (<10 nm) domain structure composed of both of chemically ordered and chemically disordered domains. A magnetic model developed from fitting the characteristic polarised neutron reflectometry spectral features reveals that dual interactions can be attributed to the observed exchange bias: magnetic coupling at the FM/AF interface and also between neighbouring FM (chemically disordered) and AF (chemically ordered) domains within the nominally FM layer. Our results indicate that exchange bias is hindered at interfaces which are both chemically and magnetically perfect, while annealing can be used to balance the volume proportions of interfacial FM and AF domains to enhance the magnetic interface roughness for customisable exchange bias in mono-stoichiometric FM/AF heterostructures crafted by ion beams.

Antiphase boundary in antiferromagnetic multiferroic LuMn0.5Fe0.5O3: anomalous ferromagnetism, exchange bias effect and large vertical hysteretic shift

The emergence of exchange bias effect in Fe₃O₄ thin films has been since attributed to the presence of anti phase boundary (APB) growth defects despite lack of direct experimental evidence. In the present report, APB induced anomalous weak ferromagnetism and exchange bias property of single-phase antiferromagnetic (AFM) system LuMn_0.5Fe_0.5O₃ (LMFO) is discussed and ⁵⁷Fe Mössbauer spectroscopy and high resolution transmission electron microscopy (HRTEM) measurements are used to probe the origin of the observed effect. In addition to the sextet component corresponding to the long range AFM ordering, the measured Mössbauer spectra reveal the presence of a small component (10%-12%) near zero velocity with unusually small internal field. This indicates the presence of APB defects. From micro structural investigations using HRTEM, presence of APB type defects and dislocations are confirmed. In addition to the exchange bias effect, upon field cooling, hysteresis loop exhibits large vertical shift due to strong pinning effect of the APB. Finally we further annealed the optimally sintered sample LMFO and studied the evolution of defects, and their influence on weak ferromagnetism and exchange bias properties. Our present experimental findings may pave the way in creating new functionalities in materials using APB-type growth defects.

Development of half metallicity within mixed magnetic phase of Cu1-x Co x MnSb alloy

Cubic half-Heusler Cu_1-x Co _x MnSb ([Formula: see text]) compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half metallic (HM) ferromagnetic (FM), respectively. Clearly, Co-doping at the Cu-site of CuMnSb introduces changes in the carrier concentration at the Fermi level that may lead to half metallic ground state but there remains a persistent controversy whether the AFM to FM transition occurs simultaneously. Our experimental results reveal that the AFM to FM magnetic transition occurs through a percolation mechanism where Co-substitution gradually suppresses the AFM phase and forces FM polarization around every dopant cobalt. As a result a mixed magnetic phase is realized within this composition range while a nearly HM band structure is developed already at the 10% Co-doping. Absence of T ² dependence in the resistivity variation at low T-region serves as an indirect proof of opening up an energy gap at the Fermi surface in one of the spin channels. This is further corroborated by the ab initio electronic structure calculations that suggests that a nearly ferromagnetic half-metallic ground state is stabilized by Sb-p holes produced upon Co doping.

How to manipulate magnetic states of antiferromagnets

Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently manipulate the magnetic state of an antiferromagnet is key to the development of antiferromagnetic spintronics. In this review, we introduce four main methods (magnetic, strain, electrical, and optical) to mediate the magnetic states and elaborate on intrinsic origins of different antiferromagnetic materials. Magnetic control includes a strong magnetic field, exchange bias, and field cooling, which are traditional and basic. Strain control involves the magnetic anisotropy effect or metamagnetic transition. Electrical control can be divided into two parts, electric field and electric current, both of which are convenient for practical applications. Optical control includes thermal and electronic excitation, an inertia-driven mechanism, and terahertz laser control, with the potential for ultrafast antiferromagnetic manipulation. This review sheds light on effective usage of antiferromagnets and provides a new perspective on antiferromagnetic spintronics.

Giant spontaneous exchange bias obtained by tuning magnetic compensation in samarium ferrite single crystals

Spontaneous exchange bias (SEB) under zero field cooling (ZFC) has recently attracted lots of attention due to its underlying physics and potential applications. Here we report the giant SEB (GSEB) of SmFeO₃ single crystals by tuning magnetic compensation by temperature, which is rather convenient. A SEB field of up to 1 T at 3.9 K after ZFC (-1.4 T at 3.9 K after field cooling) was obtained. The SEB shows reciprocal relationship with remnant magnetization.

Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Thermal and Magnetic Field Stabilities

It is of great fundamental and practical interest to develop effective means of modulating the magnetic hystereses of magnetic materials and their heterostructures. A notable example is the exchange bias (EB) effect between an antiferromagnet or ferrimagnet and a ferromagnet, which has been widely employed to manipulate magnetic anisotropy in spintronic devices and artificial magnets. Here, we report the design, synthesis and characterization of a synthetic perpendicularly-magnetized ferrimagnet based on [Mn_2.9Ga/Co₂MnSi]_n superlattices, which attains thermal stability above 400 K and a coercive field up to 45 kOe through a mechanism of magnetic compensation. The structure is incorporated into a prototype Heusler alloy and MgO barrier based magnetic tunnel junction, which demonstrates high dynamic range linear field responses and an unusual in-plane EB effect. With increasing temperature, the coercive field reaches beyond 70 kOe at 400 K in this device due to the increasing degree of magnetic moment compensation in the superlattice. The results demonstrate that the compensation mechanism can be utilized to achieve simultaneous thermal robustness and high coercivity in realistic spintronic devices.