Tuning magnetic anisotropy by interfacially engineering the oxygen coordination environment in a transition metal oxide

Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation

The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film's normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.

Dimensionality Engineering of Magnetic Anisotropy from the Anomalous Hall Effect in Synthetic SrRuO3 Crystals

Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here we investigate the impact of dimensionality of epitaxially grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1500% improvement of the coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.

Unlocking Spin Gates of Transition Metal Oxides via Strain Stimuli to Augment Potassium Ion Storage

Transition metal oxides (TMOs) are key in electrochemical energy storage, offering cost-effectiveness and a broad potential window. However, their full potential is limited by poor understanding of their slow reaction kinetics and stability issues. This study diverges from conventional complex nano-structuring, concentrating instead on spin-related charge transfer and orbital interactions to enhance the reaction dynamics and stability of TMOs during energy storage processes. We successfully reconfigured the orbital degeneracy and spin-dependent electronic occupancy by disrupting the symmetry of magnetic cobalt (Co) sites through straightforward strain stimuli. The key to this approach lies in the unfilled Co 3d shell, which serves as a spin-dependent regulator for carrier transfer and orbital interactions within the reaction. We observed that the opening of these 'spin gates' occurs during a transition from a symmetric low-spin state to an asymmetric high-spin state, resulting in enhanced reaction kinetics and maintained structural stability. Specifically, the spin-rearranged Al-Co3O4 exhibited a specific capacitance of 1371 F g-1, which is 38 % higher than that of unaltered Co3O4. These results not only shed light on the spin effects in magnetic TMOs but also establish a new paradigm for designing electrochemical energy storage materials with improved efficiency.

Immobilizing Bimetallic RuCo Nanoalloys on Few-Layered MXene as a Robust Bifunctional Electrocatalyst for Overall Water Splitting

Doping Co atoms into Ru lattices can tune the electronic structure of active sites, and the conductive MXene can adjust the electrical conductivity of catalysts, which are both favorable for improving the electrocatalytic activity of the catalyst for water splitting. Here, ruthenium-cobalt bimetallic nanoalloys coupled with exfoliated Ti3 C2 Tx MXene (RuCo-Ti3 C2 Tx ) have been constructed by ice-templated and thermal activation. Due to the strong interaction between the RuCo nanoalloys and conductive MXene, RuCo-Ti3 C2 Tx not only exhibits an excellent hydrogen evolution reaction (HER) performance with a low overpotential and Tafel slope (60 mV, 34.8 mV dec-1 in 0.5 M H2 SO4 and 52 mV, 38.7 mV dec-1 in 1 M KOH), but also good oxygen evolution reaction (OER) performance in an alkaline electrolyte (266 mV, 111.1 mV dec-1 in 1 M KOH). The assembled RuCo-Ti3 C2 Tx ||RuCo-Ti3 C2 Tx electrolyzer requires a lower potential (1.56 V) than does the Pt/C||RuO2 electrolyzer at 10 mA cm-2 . A boosted catalytic HER activity from immobilizing the RuCo nanoalloys on MXene was unveiled by density functional theory calculations. This study provides a feasible and efficient strategy for developing MXene-based catalysts for overall water splitting.

Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials

Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden-Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.

Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La2/3Sr1/3CoO3/La2/3Sr1/3MnO3 Heterostructures

Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La2/3Sr1/3CoO3 (LSCO) and La2/3Sr1/3MnO3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (tLSCO). The epitaxial LSCO/LSMO bilayers were grown on (110)o-oriented NdGaO3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (∼0.2%) in lattice mismatch between the two in-plane directions, [001]o and [11̅0]o, a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for tLSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001]o direction, and the LSCO layer was characterized by magnetically active Co2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0]o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As tLSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100]o direction, but it gradually rotated to the [11̅0]o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.

Strong oxygen-content dependence of the magnetic excitations in antiferromagnetic NiO nanoparticles: A Raman probe

Nanostructured antiferromagnetic (AFM) NiO has attracted much attention from both the fundamental and applied perspectives. Understanding the two-magnon (2 M) is of great significance in NiO applications such as spin valves and next-generation magnetic random access memories (MRAM). We investigated the phonon modes and antiferromagnetically ordered states of NiO nanoparticles prepared by empirically controlled measurements. An intensity enhancement of the 2 M mode was observed by Raman spectroscopy as the NiO nanoparticles were vacuum annealed at 650 ℃. The increased 2 M peak intensity in NiO nanoparticles is explained by the local symmetry conversions from NiO₅ to NiO₆ configurations due to the oxygen redistribution during the vacuum annealing. The change of the splitting of anisotropic transverse optical (TO) phonon with different oxygen contents was also revealed by the Raman spectroscopy. We have shown that the changes in the oxygen environment underlie both the change in the 2 M intensity and the splitting of TO phonon in the NiO nanoparticles. Our work offers an efficient avenue to strengthen the AFM ordering and emphasizes the effect of vacuum annealing of the NiO nanoparticles, opening the interesting possibility of individual parameter control in practical applications.

Strain-induced Mn valence state variation in CaMnO3-δ/substrate interfaces: electronic reconstruction versus oxygen vacancies

This study investigates the nanoscale crystalline and electronic structures of the interfaces between CaMnO_3-δ and substrates such as SrTiO₃ (001) and LaAlO₃ (001) by employing advanced transmission electron microscopy and electron energy loss spectroscopy techniques. The objective is to comprehend the influence of different strains on the Mn valence state. Our findings reveal that the Mn valence state remains relatively stable in the region of a weakly tensile-strained interface, whereas it experiences a significant decrease from Mn⁴⁺ to Mn^2.3+ in the region of a strongly tensile-strained interface. Although this reduction in valence appears to be consistent with the electron reconstruction scenario, the observed increase in the out-of-plane lattice constant at the interface implies the accumulation of oxygen vacancies at the interface. Consequently, the present study offers a comprehensive understanding of the intricate relationships among the Mn valence state, local structure, and formation of oxygen vacancies in the context of two distinct strain cases. This knowledge is essential for tailoring the interface properties and guiding future developments in the field of oxide heterostructures.

Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial Na0.5Bi0.5TiO3 Thin Films

The oxygen octahedral rotation (OOR) forms fundamental atomic distortions and symmetries in perovskite oxides and definitely determines their properties and functionalities. Therefore, epitaxial strain and interfacial structural coupling engineering have been developed to modulate the OOR patterns and explore novel properties, but it is difficult to distinguish the 2 mechanisms. Here, different symmetries are induced in Na_0.5Bi_0.5TiO₃ (NBT) epitaxial films by interfacial oxygen octahedral coupling rather than epitaxial strain. The NBT film grown on the Nb:SrTiO₃ substrate exhibits a paraelectric tetragonal phase, while with La_0.5Sr_0.5MnO₃ as a buffer layer, a monoclinic phase and robust ferroelectricity are obtained, with a remanent polarization of 42 μC cm^-2 and a breakdown strength of 7.89 MV cm^-1, which are the highest record among NBT-based films. Moreover, the interfacial oxygen octahedral coupling effect is demonstrated to propagate to the entire thickness of the film, suggesting an intriguing long-range effect. This work provides a deep insight into understanding the structure modulation in perovskite heterostructures and an important avenue for achieving unique functionalities.

Iron-based hybrid polyionic complexes as chemical reservoirs for the pH-triggered synthesis of Prussian blue nanoparticles

HYPOTHESIS

Hybrid polyion complexes (HPICs) obtained from the complexation in aqueous solution of a double hydrophilic block copolymer and metal ions can act as efficient precursors for the controlled synthesis of nanoparticles. In particular, the possibility to control the availability of metal ions by playing on the pH conditions is of special interest to obtain nanoparticles with controlled size and composition.

EXPERIMENTS

HPICs based on Fe³⁺ ions were used to initiate the formation of Prussian blue (PB) nanoparticles in presence of potassium ferrocyanide in reaction media with varying pH values.

FINDINGS

Complexed Fe³⁺ ions within HPICs can be easily released by adjusting the pH value either through the addition of a base/acid or by using a merocyanine photoacid. This allows to modulate the reactivity of Fe³⁺ ions with potassium ferrocyanide present in solution. As a result, PB nanoparticles with different structures (core, core-shell), composition and controlled size are obtained.

Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films

Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO6 octahedral rotations throughout LaCoO3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO3 films while suggesting potential applications toward low-power spintronic devices.

Tuning orbital-selective phase transitions in a two-dimensional Hund's correlated system

Hund's rule coupling (J) has attracted much attention recently for its role in the description of the novel quantum phases of multi-orbital materials. Depending on the orbital occupancy, J can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accompanies chemical inhomogeneities. Here, we demonstrate a method to investigate the role of orbital occupancy in J related phenomena without inducing inhomogeneities. By growing SrRuO₃ monolayers on various substrates with symmetry-preserving interlayers, we gradually tune the crystal field splitting and thus the orbital degeneracy of the Ru t_2g orbitals. It effectively varies the orbital occupancies of two-dimensional (2D) ruthenates. Via in-situ angle-resolved photoemission spectroscopy, we observe a progressive metal-insulator transition (MIT). It is found that the MIT occurs with orbital differentiation: concurrent opening of a band insulating gap in the d_xy band and a Mott gap in the d_xz/yz bands. Our study provides an effective experimental method for investigation of orbital-selective phenomena in multi-orbital materials.

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO₃ is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO₃ . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

Top-Layer Engineering Reshapes Charge Transfer at Polar Oxide Interfaces

Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded properties in ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. Therefore, developing less-invasive methods to control charge transfer will be beneficial. Here, an appropriate top-interface design allows for remote manipulation of the charge configuration of the buried interface and concurrent restoration of the ferromagnetic trait of the whole film. Double-perovskite insulating ferromagnetic La₂ NiMnO₆ (LNMO) thin films grown on perovskite oxide substrates are investigated as a model system. An oxygen-vacancy-assisted electronic reconstruction takes place initially at the LNMO polar interfaces. As a result, the magnetic properties of 2-5 unit cell LNMO films are affected beyond dimensionality effects. The introduction of a top electron-acceptor layer redistributes the electron excess and restores the ferromagnetic properties of the ultrathin LNMO films. Such a strategy can be extended to other interfaces and provides an advanced approach to fine-tune the electronic features of complex multilayered heterostructures.

Boosting in-plane anisotropy by periodic phase engineering in two-dimensional VO2 single crystals

In-plane anisotropy (IPA) due to asymmetry in lattice structures provides an additional parameter for the precise tuning of characteristic polarization-dependent properties in two-dimensional (2D) materials, but the narrow range within which such method can modulate properties hinders significant development of related devices. Herein we present a novel periodic phase engineering strategy that can remarkably enhance the intrinsic IPA obtainable from minor variations in asymmetric structures. By introducing alternant monoclinic and rutile phases in 2D VO2 single crystals through the regulation of interfacial thermal strain, the IPA in electrical conductivity can be reversibly modulated in a range spanning two orders of magnitude, reaching an unprecedented IPA of 113. Such an intriguing local phase engineering in 2D materials can be well depicted and predicted by a theoretical model consisting of phase transformation, thermal expansion, and friction force at the interface, creating a framework applicable to other 2D materials. Ultimately, the considerable adjustability and reversibility of the presented strategy provide opportunities for future polarization-dependent photoelectric and optoelectronic devices.

Topological Hall effect in SrRuO3thin films and heterostructures

Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO₃thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.

Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films

Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.

Strain and orientation engineering in ABO3perovskite oxide thin films

Perovskite oxides with chemical formula ABO₃are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.

Breaking of Thermopower-Conductivity Trade-Off in LaTiO3 Film around Mott Insulator to Metal Transition

Introducing artificial strain in epitaxial thin films is an effective strategy to alter electronic structures of transition metal oxides (TMOs) and to induce novel phenomena and functionalities not realized in bulk crystals. This study reports a breaking of the conventional trade-off relation in thermopower (S)-conductivity (σ) and demonstrates a 2 orders of magnitude enhancement of power factor (PF) in compressively strained LaTiO3 (LTO) films. By varying substrates and reducing film thickness down to 4 nm, the out-of-plane to the in-plane lattice parameter ratio is controlled from 0.992 (tensile strain) to 1.034 (compressive strain). This tuning induces the electronic structure change from a Mott insulator to a metal and leads to a 103 -fold increase in σ up to 2920 S cm-1 . Concomitantly, the sign of S inverts from positive to negative, and both σ and S increase and break the trade-off relation between them in the n-type region. As a result, the PF (=S2 σ) is significantly enhanced to 300 µW m- 1 K-2 , which is 102 times larger than that of bulk LTO. Present results propose epitaxial strain as a means to finely tune strongly correlated TMOs close to their Mott transition, and thus to harness the hidden large thermoelectric PF.

Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in La0.7Sr0.3MnO3 Interfacial Dead Layers

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La_0.7Sr_0.3MnO₃ (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.

Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films

Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO₃ and NdNiO₃ thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO₃ layer in LaNiO₃/NdNiO₃ bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO₃. Modification of the NdNiO₃ template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO₆ octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.

Symmetry mismatch controlled ferroelastic domain ordering and the functional properties of manganite films on cubic miscut substrates

We have studied the magnetotransport properties and strain release mechanisms in ferroelastic La0.9Sr0.1MnO3 (LSMO) epitaxial thin films on SrTiO3 (STO)(001) substrates with different miscut angles. The substrate miscut angle plays a critical role in releasing shear strain and has a huge impact on the properties of the films. The strain relaxes by monoclinic distortion for films on low miscut substrates and for higher miscut substrates, the strain relaxation causes the formation of periodic twin domains with larger periodicities. We observe that the Curie temperature (TC) decreases systematically, and magnetoresistance (MR) increases with increasing the miscut angle. Such changes in the magnetic and transport properties could be due to the increased density of phase boundaries (PBs) with the increase of miscut angle. This work provides a way to tailor film microstructures and subsequent functional properties of other complex oxide films on miscut substrates with symmetry mismatch.

Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films

A variety of emergent phenomena are enabled by interface engineering in the complex oxides heterostructures. While extensive attention is attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however, controversial. Here, it is reported that the ferromagnetism in two and five unit cells thick LMO films epitaxially deposited on (001)-SrTiO3 substrates, a ferromagnetic/ferromagnetic coupling in eight and ten unit cells ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20 unit cells ones are observed. This novel phenomenon in both 15 and 20 unit cells films indicates a coexistence of three magnetic orderings in a single LMO film. The high-resolution scanning transmission electron microscopy suggests a P21/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO6 octahedral morphology, corresponding to different magnetic orderings. These results can shed some new lights on manipulating the functionality of oxides by interface engineering.

Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-Layered Oxides

Manipulation of octahedral distortion at atomic scale is an effective means to tune the ground states of functional oxides. Previous work demonstrates that strain and film thickness are variable parameters to modify the octahedral parameters. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetism in SrRuO₃ (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO₂ (SCO) layers. The infinite-layered CuO₂ exhibits a structural transformation from "planar-type" to "chain-type" with reduced film thickness. Two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and orbital hybridization strength, leading to a significant change in the magnetoresistance and anomalous Hall resistivity. These findings could launch investigations into adaptive control of functionalities in quantum oxide heterostructures using oxygen coordination.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Spatially Controlled Octahedral Rotations and Metal-Insulator Transitions in Nickelate Superlattices

The properties of correlated oxides can be manipulated by forming short-period superlattices since the layer thicknesses are comparable with the typical length scales of the involved correlations and interface effects. Herein, we studied the metal-insulator transitions (MITs) in tetragonal NdNiO₃/SrTiO₃ superlattices by controlling the NdNiO₃ layer thickness, n in the unit cell, spanning the length scale of the interfacial octahedral coupling. Scanning transmission electron microscopy reveals a crossover from a modulated octahedral superstructure at n = 8 to a uniform nontilt pattern at n = 4, accompanied by a drastically weakened insulating ground state. Upon further reducing n the predominant dimensionality effect continuously raises the MIT temperature, while leaving the antiferromagnetic transition temperature unaltered down to n = 2. Remarkably, the MIT can be enhanced by imposing a sufficiently large strain even with strongly suppressed octahedral rotations. Our results demonstrate the relevance for the control of oxide functionalities at reduced dimensions.

Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces

A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity. However, this depends on the Ti-O-Ti bonding angle and structural symmetry. In this study, we controlled the octahedral tilt of the LAO/CaTiO3 (CTO) interface by heterostructuring it with CTO grown on STO substrates of various thicknesses. The 2DEG was maintained when the thickness of CTO was below the critical thickness of 5 unit cells (uc); however, it was suppressed when the CTO thickness was above the critical thickness. High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) combined with integrated differential phase contrast (iDPC) STEM imaging was used to visualize the TiO6 octahedral tilt propagation and symmetry of the 5 uc and 24 uc CTO films. The symmetry of the 5 uc CTO film resembled that of the STO substrate, whereas the octahedral tilt propagated in the 24 uc CTO film due to the structural relaxation. These results show that the interface engineering of the octahedral tilt can enable or suppress the formation of the 2DEG in perovskite oxides.

Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern

Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable pattern of octahedral rotation leads to robust room-temperature ferroelectricity in CaTiO3, which is otherwise nonpolar down to 0 K. Guided by density-functional theory, we selectively stabilize the metastable pattern, distinct from the equilibrium pattern and cooperative with ferroelectricity, in heteroepitaxial films of CaTiO3. Atomic-scale imaging combined with deep neural network analysis confirms a close correlation between the metastable pattern and ferroelectricity. This work reveals a hidden but functional pattern of oxygen octahedral rotation and opens avenues for designing multifunctional materials.

Tuning Irreversible Magnetoresistance in Pr0.67Sr0.33MnO3 Film via Octahedral Rotation

The oxygen octahedral rotation around the out-of-plane axis is explored to study its effect on metastable status, magnetic cluster glass in manganite. The antiphase rotation around the out-of-plane axis (TiO₆ a⁰a⁰c^-) of SrTiO₃ enhances the Mn-O bond anisotropy along in-plane and out-of-plane directions and weakens the ferromagnetic interactions in a 12 nm Pr_0.67Sr_0.33MnO₃ film on the (001) SrTiO₃ substrate, which together promote the formation of magnetic cluster-glassiness and enlarges the irreversible magnetoresistance (MR) effect with enhanced relaxation time of charge carriers. The effect of TiO₆ a⁰a⁰c^- in the SrTiO₃ substrate on material properties is obvious with a large irreversible MR effect for thin films, which fades away with the increase in film thickness. At 10 K, the irreversible MR is 0.91 for the 12 nm film and 0.22 for the 30 nm film. This work extends current understanding on interfacial coupling to metastable status and could help explore other systems in the perovskite structure with octahedral rotation.

Detection of the Chiral Spin Structure in Ferromagnetic SrRuO3 Thin Film

SrRuO₃ (SRO) thin films and their heterostructure have attracted much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft X-ray scattering (RSXS) at the oxygen K edge to investigate the spin configuration of a four-unit-cell SRO film that was grown epitaxially on a single-crystal SrTiO₃. The RSXS signal under a magnetic field (∼0.4 tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.

Strong Magnetic Anisotropy of Epitaxial PrVO3 Thin Films on SrTiO3 Substrates with Different Orientations

We have probed the structural and magnetic properties of PrVO₃ (PVO) thin films grown on the (001)-, (110)-, and (111)-oriented SrTiO₃ (STO) substrates. By changing the substrate orientation, the film out-of-plane orientation can be tuned to [110], [100]/[010], and [011]/[311], with different in-plane crystallographic variants. Accommodation of these variants on the different substrates implies different strain states, which have direct influence on the magnetic properties of PVO films. The magnetic moment of PVO films radically enhances from 0.4 μ_B/f.u. for STO(001) to 2.3 μ_B/f.u. for STO(111). While films on the (001)-oriented STO substrate display out-of-plane anisotropy, an in-plane anisotropy is observed for films grown on the (110)- and (111)-oriented STO substrates. In addition, a strong uniaxial magnetic anisotropy is also extracted for a partially relaxed film on the (110)-oriented STO substrate. Such findings can help oxide community for the better understanding of magnetic anisotropy in vanadate thin films, a subject that still suffer from significant lack of scientific investigations.

Propagation Control of Octahedral Tilt in SrRuO3 via Artificial Heterostructuring

Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilt of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin-film lattice parameters. In this study, a method to selectively engineer the octahedral bonding geometries is proposed, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering is developed using atomically designed SrRuO3/SrTiO3 (SRO/STO) superlattices. In particular, the propagation of RuO6 octahedral tilt within the SRO layers having identical thicknesses is systematically controlled by varying the thickness of adjacent STO layers. This leads to a substantial modification in the electromagnetic properties of the SRO layer, significantly enhancing the magnetic moment of Ru. This approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties.

Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here, we determine the effect of the cubic-tetragonal distortion of SrTiO3 on the electronic properties of thin films of SrIrO3, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, SrIrO3 orthorhombic domains couple directly to tetragonal domains in SrTiO3. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the SrIrO3 film. The close proximity to the metal-insulator transition in ultrathin SrIrO3 causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180° spin switching between states. We demonstrate a previously unobserved eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3) N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial 〈001〉 direction (N < 3) to eightfold 〈111〉 directions (N ≥ 3). This eightfold anisotropy enables 71° and 109° spin switching in SrRuO3 monolayers, analogous to 71° and 109° polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multistate device applications.

Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites

Manipulation of the heterointerfacial structure and/or chemistry of transition metal oxides is of great interest for the development of novel properties. However, few studies have focused on heterointerfacial effects on the growth characteristics of oxide thin films, although such interfacial engineering is crucial to determine the growth dynamics and physical properties of oxide heterostructures. Herein, we show that heterointerfacial effects play key roles in determining the growth process of oxide thin films by overcoming the simple epitaxial strain energy. Brownmillerite (SrFeO_2.5; BM-SFO) thin films are epitaxially grown along the b-axis on both SrTiO₃(001) and SrRuO₃/SrTiO₃(001) substrates, whereas growth along the a-axis is expected from conventional epitaxial strain effects originating from lattice mismatch with the substrates. Scanning transmission electron microscopy measurements and first principles calculations reveal that these peculiar growth characteristics of BM-SFO thin films originate from the heterointerfacial effects governed by their distinct interfacial structures. These include octahedral connectivity between dissimilar oxides containing different chemical species and a peculiar transition layer for BM-SFO/SrRuO₃/SrTiO₃(001) and BM-SFO/SrTiO₃(001) heterostructures, respectively. These effects enable subtle control of the growth process of oxide thin films and could facilitate the fabrication of novel functional devices.

Interfacial Control of Ferromagnetism in Ultrathin SrRuO3 Films Sandwiched between Ferroelectric BaTiO3 Layers

Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO₃ layer between ferroelectric BaTiO₃ layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO₃ films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to ∼3.12 μ_B/Ru in ultrathin BaTiO₃/SrRuO₃/BaTiO₃ trilayers, which is beyond the theoretical limit of bulk value (2 μ_B/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO₃/SrRuO₃ heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO₆ oxygen octahedra and subsequent spin-state crossover in SrRuO₃, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Modulation of metal-insulator transitions of NdNiO3/LaNiO3/NdNiO3 trilayers via thickness control of the LaNiO3 layer

Over the last few decades, manipulating the metal-insulator (MI) transition in perovskite oxides (ABO₃) via an external control parameter has been attempted for practical purposes, but with limited success. The substitution of A-site cations is the most widely used technique to tune the MI transition. However, this method introduces unintended disorder, blurring the intrinsic properties. The present study reports the modulation of MI transitions in [10 nm-NdNiO₃/t-LaNiO₃/10 nm-NdNiO₃/SrTiO₃ (100)] trilayers (t = 5, 7, 10, and 20 nm) via the control of the LaNiO₃ thickness. Upon an increase in the thickness of the LaNiO₃ layer, the MI transition temperature undergoes a systematic decrease, demonstrating that bond disproportionation, the MI, and antiferromagnetic transitions are modulated by the LaNiO₃ thickness. Because the bandwidth and the MI transition are determined by the Ni-O-Ni bond angle, this unexpected behavior suggests the transfer of the bond angle from the lower layer into the upper. The bond-angle transfer eventually induces a structural change of the orthorhombic structure of the middle LaNiO₃ layer to match the structure of the bottom and the top NdNiO₃, as evidenced by transmission electron microscopy. This engineering layer sequence opens a novel pathway to the manipulation of the key properties of oxide nickelates, such as the bond disproportionation, the MI transition, and unconventional antiferromagnetism with no impact of disorder.

Breaking Lattice Symmetry in Highly Strained Epitaxial VO2 Films on Faceted Nanosurface

The lattice symmetry of strongly correlated oxide heterostructures determines their exotic physical properties by coupling the degrees of freedom between lattices and electrons, orbitals, and spin states. Systematic studies on VO₂, a Mott insulator, have previously revealed that lattice distortion can be manipulated by the interfacial strain and electronic phase separation can emerge. However, typical epitaxial film-substrate interface strain provides a very limited range for exploring such interface-engineered phenomena. Herein, epitaxially grown VO₂ thin films on asymmetrically faceted m-plane sapphire substrates with the hill-and-valley type surfaces have been demonstrated. Interestingly, lattice symmetry breaking has been proven based on the large residual strain from the different faceted planes. By this lattice symmetry breaking, electronic phase separation and metal-insulator transition in the VO₂ films are modulated, and anisotropy in optical responses is exhibited. These results on asymmetrical interfacial engineering in oxide heterostructures open up new routes for novel functional materials design and functional electro/optic device nanofabrication.

Tuning magnetic anisotropy in Co-BaZrO3 vertically aligned nanocomposites for memory device integration

Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe-Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co-BaZrO3 (Co-BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co-BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co-BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co-BZO's immense potential for future spintronic devices.

Zn+-O- Dual-Spin Surface State Formation by Modification of ZnO Nanoparticles with Diboron Compounds

ZnO semiconductor oxides are versatile functional materials that are used in photoelectronics, catalysis, sensing, etc. The Zn⁺-O^- surface electronic states of semiconductor oxides were formed on the ZnO surface by Zn 4s and O 2p orbital coupling with the diboron compound's B 2p orbitals. The formation of spin-coupled surface states was based on the spin-orbit interaction on the interface, which has not been reported before. This shows that the semiconductor oxide's spin surface states can be modulated by regulating surface orbital energy. The Zn⁺-O^- surface electronic states were confirmed by electron spin resonance results, which may help in expanding the fundamental research on spintronics modulation and quantum transport.

Crossover from negative to positive magnetoresistance in Sr2CrWO6/Sr2Fe10/9Mo8/9O6 superlattices

Sr₂CrWO₆/Sr₂Fe_10/9Mo_8/9O₆ (SCWO/SFMO) superlattices with 4, 6, 7, 10 periods (abbreviated as S-1, S-2, S-3, and S-4) were prepared on (0 0 1) SrTiO₃ (STO) substrates by pulsed laser deposition. All superlattices show macroscopic ferromagnetic behavior, and the magnetization increases with increasing period. The S-1 superlattice demonstrates semiconductor-like temperature-dependent resistivity in the whole measuring temperature range and negative magnetoresistance of  -5.3% at 2 K with 2 T magnetic field, while the other superlattices illustrate metallic behaviors and increasing positive magnetoresistance of 223.1%, 275.4%, and 766.1% under the same conditions. This work not only provides a feasible way to tune the MR effect in magnetic perovskite oxides, but also may stimulate further work on artificially micro-structured thin films with designable magnetic properties.

Interfacial Engineering of Ferromagnetism in Epitaxial Manganite/Ruthenate Superlattices via Interlayer Chemical Doping

Interfacial charge transfer and structural proximity effects are the two essential routes to trigger and tune numerous functionalities of perovskite oxide heterostructures. However, the cooperation and competition of these two interfacial effects in one epitaxial system have not been fully understood. Herein, we fabricate a series of La_0.67Ca_0.33MnO₃/CaRuO₃ superlattices and introduce various chemical doping in the nonmagnetic CaRuO₃ interlayers. We found that Ti, Sr, and La doping in the CaRuO₃ layer can effectively tune the interfacial charge transfer and octahedral rotation, thus modulating the ferromagnetism of the superlattices. Specifically, the B-site Ti doping depletes the Ru 4d band and suppresses the interfacial charge transfer, leading to a decay of ferromagnetic Curie temperature ( T_C). In contrast, the A-site Sr doping maintains a sizable charge transfer and meanwhile suppresses the octahedral rotation, which facilitates ferromagnetism and significantly enhances the T_C up to 291 K. The La doping turns out to localize the itinerant electrons in the CaRuO₃ layer, which suppresses both the interfacial charge transfer and ferromagnetism. The observed intriguing interfacial engineering of magnetism would pave a new way to understand the collective effects of interfacial charge transfer and structural proximity on the physical properties of oxide heterostructures.

Ultrathin Scale Tailoring of Anisotropic Magnetic Coupling and Anomalous Magnetoresistance in SrRuO3-PrMnO3 Superlattices

A strong perpendicular magnetocrystalline anisotropy (PMA) in antiferromagnetically coupled SrRuO₃(17 uc (unit cell))/PrMnO₃( n uc) superlattices effectively reconstructs the interfacial spin ordering. The occurrence of significant anisotropic interfacial antiferromagnetic coupling between the Ru and Mn ions is systematically tuned by varying the PrMnO₃ layer thickness in ultrathin scale from 3 to 12 uc, which is associated with a rise in PMA energy from 0.28 × 10⁶ to 1.60 × 10⁶ erg/cm³. The analysis using the Stoner-Wohlfarth model and density functional theory confirm that the exchange anisotropy is the major contribution to the PMA. The superlattices with PrMnO₃ layer thickness ≥7 uc exhibit the tunneling-like transport of Ru 4d electrons, which is rather expected in the stronger antiferromagnetically coupled superlattices with thinner PrMnO₃ layer. Tunneling-like transport at thicker spacer layer in the SrRuO₃-PrMnO₃ superlattice system is an unique feature of two ferromagnet-based superlattices. Our investigations show that the technologically important interfacial magnetic coupling, PMA, and tunneling magnetoresistance could be achieved in a periodically stacked bilayer and can be precisely manipulated by the size effect in ultrathin scale.

Three-dimensional atomic scale electron density reconstruction of octahedral tilt epitaxy in functional perovskites

Octahedral tilts are the most ubiquitous distortions in perovskite-related structures that can dramatically influence ferroelectric, magnetic, and electronic properties; yet the paradigm of tilt epitaxy in thin films is barely explored. Non-destructively characterizing such epitaxy in three-dimensions for low symmetry complex tilt systems composed of light anions is a formidable challenge. Here we demonstrate that the interfacial tilt epitaxy can transform ultrathin calcium titanate, a non-polar earth-abundant mineral, into high-temperature polar oxides that last above 900 K. The comprehensive picture of octahedral tilts and polar distortions is revealed by reconstructing the three-dimensional electron density maps across film-substrate interfaces with atomic resolution using coherent Bragg rod analysis. The results are complemented with aberration-corrected transmission electron microscopy, film superstructure reflections, and are in excellent agreement with density functional theory. The study could serve as a broader template for non-destructive, three-dimensional atomic resolution probing of complex low symmetry functional interfaces.

In complex oxides, oxygen octahedra are major structural motifs and their tilts sensitively determine the material’s physical properties. Exploiting Coherent Bragg Rod Analysis enables 3D mapping of complex tilt patterns and reveals the means to control polarization through them in CaTiO₃ thin films.

Dynamic Field Modulation of the Octahedral Framework in Metal Oxide Heterostructures

Control over the oxygen octahedral framework is widely recognized as key to the design of functional properties in perovskite oxide heterostructures. Although the oxygen octahedral framework can be manipulated during synthesis, the as-grown oxygen octahedra generally remain fixed, preventing the development of adaptive behavior in electronic and ionotronic systems. Here, it is demonstrated that the oxygen octahedral framework can be dynamically and reversibly manipulated by an electric field through the coupling with oxygen vacancies. Studying model WO₃ heterostructures during ionic liquid gating with a combination of in situ X-ray scattering and spectroscopy, it is shown that large changes in electronic properties can arise due to the increased flexibility of the octahedral network at high vacancy concentrations. The results describe a generic framework for the construction of dynamic systems and devices with an array of field-tunable properties.

Magnetic Anisotropy Controlled by Distinct Interfacial Lattice Distortions at the La1- xSr xCoO3/La2/3Sr1/3MnO3 Interfaces

Interface engineering is an important approach leading to multifunctional artificial materials. Although most of the previous works focused on the effects of the rotation/tilting of interfacial oxygen octahedron on perovskite multilayers, here, we report on a new kind of lattice distortion characterized by an off-center shift of the Mn ions within the MnO₆ oxygen octahedra at the interfaces of La_{1- x}Sr _xCoO₃/La_2/3Sr_1/3MnO₃/La_{1- x}Sr _xCoO₃/LaAlO₃ trilayers ( x = 0-1/3), which drives the initially perpendicularly aligned magnetic axis of the La_2/3Sr_1/3MnO₃ (LSMO) film toward the in-plane direction, though the film is in a strongly compressive state. It is further found that the magnetic anisotropy considerably depends on the content of Sr in La_{1- x}Sr _xCoO₃, enhancing as x decreases. The maximal anisotropy constant at 10 K is +2.5 × 10⁶ erg/cm³ for the trilayers with x = 0, whereas it is -1.5 × 10⁵ erg/cm³ for a bare LSMO film on LaAlO₃. On the basis of the analysis of X-ray absorption spectroscopy and the results of density functional theory calculations, we found that the off-center displacement of the Mn ions has caused a strong orbital reconstruction at interfaces, resulting in the anomalous spin orientation against magnetoelastic coupling.