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Xiang F, Bisht N, Da B, Mohammed MSG, Neiss C, Görling A, Maier S. Intrinsically Patterned Two-Dimensional Transition Metal Halides. ACS NANO 2024; 18:18870-18879. [PMID: 39001861 DOI: 10.1021/acsnano.3c09580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Patterning and defect engineering are key methods for tuning the properties and enabling distinctive functionalities in two-dimensional (2D) materials. However, generating 2D periodic patterns of point defects in 2D materials, such as vacancy lattices that can serve as antidot lattices, has been elusive until now. Herein, we report on 2D transition metal dihalides epitaxially grown on metal surfaces featuring periodically assembled halogen vacancies that result in alternating coordination of the transition metal atom. Using low-temperature scanning probe microscopy and low-energy electron diffraction, we identified the structural properties of intrinsically patterned FeBr2 and CoBr2 monolayers grown epitaxially on Au(111). Density functional theory reveals that Br vacancies are facilitated by low formation energies, and the formation of a vacancy lattice results in a substantial decrease in the lattice mismatch with the underlying Au(111). We demonstrate that interfacial strain engineering presents a versatile strategy for controlled patterning in two dimensions with atomic precision over several hundred nanometers to solve a long-standing challenge of growing atomically precise antidot lattices. In particular, patterning of 2D materials containing transition metals provides a versatile method to achieve unconventional spin textures with noncollinear spin.
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Affiliation(s)
- Feifei Xiang
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Neeta Bisht
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Binbin Da
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Mohammed S G Mohammed
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Christian Neiss
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Andreas Görling
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Sabine Maier
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
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2
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Bafekry A, Fadlallah MM, Faraji M, Khan SH, Jappor HR, Shokri B, Ghergherehchi M, Chang GS. Metal to semiconductor switching in the AgTe monolayer via decoration with alkali metal and alkaline earth metal atoms: a first-principles perspective. Phys Chem Chem Phys 2024; 26:11056-11063. [PMID: 38529535 DOI: 10.1039/d3cp05360a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
In this work, employing first-principles calculations, we systematically investigate the atomic structure and electronic and optical properties of the AgTe monolayer, as well as the impact of alkali metal (Li, Na, K) and alkaline earth metal (Be, Mg, Ca) atoms decoration. The AgTe monolayer exhibits metallic characteristics. When Li, Na, K, and Mg atoms are decorated on the AgTe monolayer, the decorated AgTe monolayers are dynamically stable. In contrast, with Be and Ca atoms, the decorated structures are found to be dynamically unstable. Interestingly, the decoration of Li, Na, and K atoms into the AgTe monolayer can open the band gaps in the decorated Li-, Na- and K-AgTe monolayers around the Fermi level, leading to the actualization of metal-to-semiconductor transitions. In contrast, the decorated Mg-AgTe monolayer maintains its metallic characteristic. The highest electron and hole mobilities are achieved in the Na-AgTe monolayer among the decorated structures, suggesting the applicability of this structure in photovoltaic applications. The optical study shows that Li-, Na- and K-decorated AgTe monolayers have improved light absorption in the visible light region. Consequently, our findings shed light on the decoration of these 2D material monolayers and can potentially enhance and motivate studies in producing these monolayers for current nanodevices and future applications.
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Affiliation(s)
- A Bafekry
- Department of Physics, Shahid Beheshti University, 19839-63113, Tehran, Iran.
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - S Hasan Khan
- Department of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology (KUET), Khulna-9203, Bangladesh
| | - H R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla, Iraq
| | - Babak Shokri
- Department of Physics, Shahid Beheshti University, 19839-63113, Tehran, Iran.
- Department of Physics and Laser-Plasma Research Institute, Shahid Beheshti University, Evin, 19839, Tehran, Iran
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
| | - Gap Soo Chang
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK S7N5E2, Canada
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3
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Wang Y, Zhai W, Ren Y, Zhang Q, Yao Y, Li S, Yang Q, Zhou X, Li Z, Chi B, Liang J, He Z, Gu L, Zhang H. Phase-Controlled Growth of 1T'-MoS 2 Nanoribbons on 1H-MoS 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307269. [PMID: 37934742 DOI: 10.1002/adma.202307269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 10/31/2023] [Indexed: 11/09/2023]
Abstract
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.
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Affiliation(s)
- Yongji Wang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qi Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zhen He
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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Zhou H, Zhang C, Gao A, Shi E, Guo Y. Patterned growth of two-dimensional atomic layer semiconductors. Chem Commun (Camb) 2024; 60:943-955. [PMID: 38168791 DOI: 10.1039/d3cc04866g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.
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Affiliation(s)
- Hao Zhou
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Chiyu Zhang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Anran Gao
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, 310030, China.
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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Yin L, Cheng R, Pan S, Xiong W, Chang S, Zhai B, Wen Y, Cai Y, Guo Y, Sendeku MG, Jiang J, Liao W, Wang Z, He J. Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306850. [PMID: 37688530 DOI: 10.1002/adma.202306850] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 09/05/2023] [Indexed: 09/11/2023]
Abstract
The ultrathin thickness of 2D layered materials affords the control of their properties through defects, surface modification, and electrostatic fields more efficiently compared with bulk architecture. In particular, patterning design, such as moiré superlattice patterns and spatially periodic dielectric structures, are demonstrated to possess the ability to precisely control the local atomic and electronic environment at large scale, thus providing extra degrees of freedom to realize tailored material properties and device functionality. Here, the scalable atomic-scale patterning in superionic cuprous telluride by using the bonding difference at nonequivalent copper sites is reported. Moreover, benefitting from the natural coupling of ordered and disordered sublattices, controllable piezoelectricity-like multilevel switching and bipolar switching with the designed crystal structure and electrical contact is realized, and their application in image enhancement is demonstrated. This work extends the known classes of patternable crystals and atomic switching devices, and ushers in a frontier for image processing with memristors.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Shurong Pan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Sheng Chang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | | | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Weitu Liao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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Gu BS, Dutta S, Hong YR, Ngome Okello OF, Im H, Ahn S, Choi SY, Woo Han J, Ryu S, Lee IS. Harmonious Heterointerfaces Formed on 2D-Pt Nanodendrites by Facet-Respective Stepwise Metal Deposition for Enhanced Hydrogen Evolution Reaction. Angew Chem Int Ed Engl 2023; 62:e202307816. [PMID: 37335309 DOI: 10.1002/anie.202307816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 06/18/2023] [Accepted: 06/19/2023] [Indexed: 06/21/2023]
Abstract
The performance of nanocrystal (NC) catalysts could be maximized by introducing rationally designed heterointerfaces formed by the facet- and spatio-specific modification with other materials of desired size and thickness. However, such heterointerfaces are limited in scope and synthetically challenging. Herein, we applied a wet chemistry method to tunably deposit Pd and Ni on the available surfaces of porous 2D-Pt nanodendrites (NDs). Using 2D silica nanoreactors to house the 2D-PtND, an 0.5-nm-thick epitaxial Pd or Ni layer (e-Pd or e-Ni) was exclusively formed on the flat {110} surface of 2D-Pt, while a non-epitaxial Pd or Ni layer (n-Pd or n-Ni) was typically deposited at the {111/100} edge in absence of nanoreactor. Notably, these differently located Pd/Pt and Ni/Pt heterointerfaces experienced distinct electronic effect to influence unequally in electrocatalytic synergy for hydrogen evolution reaction (HER). For instance, an enhanced H2 generation on the Pt{110} facet with 2D-2D interfaced e-Pd deposition and faster water dissociation on the edge-located n-Ni overpowered their facet-located counterparts in respective HER catalysis. Therefore, a feasible assembling of the valuable heterointerfaces in the optimal 2D n-Ni/e-Pd/Pt catalyst overcame the sluggish alkaline HER kinetics, with a catalytic activity 7.9 times higher than that of commercial Pt/C.
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Affiliation(s)
- Byeong Su Gu
- Center for Nanospace-confined Chemical Reactions (NCCR), Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Soumen Dutta
- Center for Nanospace-confined Chemical Reactions (NCCR), Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Yu-Rim Hong
- Center for Nanospace-confined Chemical Reactions (NCCR), Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Odongo Francis Ngome Okello
- Department of Materials Science & Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Current address: Samsung Electronics, Suwon, Korea
| | - Hyeonae Im
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Seungil Ahn
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Si-Young Choi
- Department of Materials Science & Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Jeong Woo Han
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - Sunmin Ryu
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
| | - In Su Lee
- Center for Nanospace-confined Chemical Reactions (NCCR), Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea
- Institute for Convergence Research and Education in Advanced Technology (I-CREATE), Yonsei University, Seoul, 03722, South Korea
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8
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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9
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Jamdagni P, Kumar A, Srivastava S, Pandey R, Tankeshwar K. Photocatalytic properties of anisotropic β-PtX 2 (X = S, Se) and Janus β-PtSSe monolayers. Phys Chem Chem Phys 2022; 24:22289-22297. [PMID: 36098214 DOI: 10.1039/d2cp02549c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The highly efficient photocatalytic water splitting process to produce clean energy requires novel semiconductor materials to achieve a high solar-to-hydrogen energy conversion efficiency. Herein, the photocatalytic properties of anisotropic β-PtX2 (X = S, Se) and Janus β-PtSSe monolayers were investigated based on the density functional theory. The small cleavage energy for β-PtS2 (0.44 J m-2) and β-PtSe2 (0.40 J m-2) endorses the possibility of mechanical exfoliation from their respective layered bulk materials. The calculated results revealed that the β-PtX2 monolayers have an appropriate bandgap (∼1.8-2.6 eV) enclosing the water redox potential, light absorption coefficient (∼104 cm-1), and exciton binding energy (∼0.5-0.7 eV), which facilitates excellent visible-light-driven photocatalytic performance. Remarkably, the inherent structural anisotropy leads to an anisotropic high carrier mobility (up to ∼5 × 103 cm2 V-1 S-1), leading to a fast transport of photogenerated carriers. Notably, the required small external potential to realize hydrogen evolution reaction and oxygen evolution reaction processes with an excellent solar-to-hydrogen energy conversion efficiency for β-PtSe2 (∼16%) and β-PtSSe (∼18%) makes them promising candidates for solar water splitting applications.
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Affiliation(s)
- Pooja Jamdagni
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, Bathinda, 151401, India
| | - Sunita Srivastava
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA.
| | - K Tankeshwar
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh, 123031, India.
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10
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Wang D, Wang Z, Wu S, Yin X, Tang CS, Feng YP, Wu J, Wee ATS. Realizing Two-Dimensional Supramolecular Arrays of a Spin Molecule via Halogen Bonding. ACS NANOSCIENCE AU 2022; 2:333-340. [PMID: 37102064 PMCID: PMC10125333 DOI: 10.1021/acsnanoscienceau.2c00005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Well-ordered spin arrays are desirable for next-generation molecule-based magnetic devices, yet their synthetic method remains a challenging task. Herein, we demonstrate the realization of two-dimensional supramolecular spin arrays on surfaces via halogen-bonding molecular self-assembly. A bromine-terminated perchlorotriphenylmethyl radical with net carbon spin was synthesized and deposited on Au(111) to achieve two-dimensional supramolecular spin arrays. By taking advantage of the diversity of halogen bonds, five supramolecular spin arrays form and are probed by low-temperature scanning tunneling microscopy at the single-molecule level. First-principles calculations verify that the formation of three distinct types of halogen bonds can be used to tailor supramolecular spin arrays via molecular coverage and annealing temperature. Our work suggests that supramolecular self-assembly can be a promising method to engineer two-dimensional molecular spin arrays.
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Affiliation(s)
- Dingguan Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Zishen Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Shaofei Wu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Xinmao Yin
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
- Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
- Institute of Materials Research and Engineering, ASTAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Jishan Wu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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11
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Ji J, Choi JH. Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields. NANOSCALE 2022; 14:10648-10689. [PMID: 35839069 DOI: 10.1039/d2nr01358d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.
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Affiliation(s)
- Jaehoon Ji
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
| | - Jong Hyun Choi
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
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12
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Li B, Wang J, Wu Q, Tian Q, Li P, Zhang L, Yin LJ, Tian Y, Johnny Wong PK, Qin Z, Zhang L. Nanopore-Patterned CuSe Drives the Realization of the PbSe-CuSe Lateral Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32738-32746. [PMID: 35802412 DOI: 10.1021/acsami.2c08397] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3 substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore-patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a fourfold symmetric square lattice of such PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.
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Affiliation(s)
- Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Li
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum Systems, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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13
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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14
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Zhang Z, Huang Z, Li J, Wang D, Lin Y, Yang X, Liu H, Liu S, Wang Y, Li B, Duan X, Duan X. Endoepitaxial growth of monolayer mosaic heterostructures. NATURE NANOTECHNOLOGY 2022; 17:493-499. [PMID: 35437319 DOI: 10.1038/s41565-022-01106-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2020] [Accepted: 03/01/2022] [Indexed: 06/14/2023]
Abstract
The controllable growth of two-dimensional (2D) heterostructure arrays is critical for exploring exotic physics and developing novel devices, yet it remains a substantial synthetic challenge. Here we report a rational synthetic strategy to fabricate mosaic heterostructure arrays in monolayer 2D atomic crystals. By using a laser-patterning and an anisotropic thermal etching process, we create periodic triangular hole arrays in 2D crystals with precisely controlled size and atomically clean edges, which function as robust templates for endoepitaxial growth of another 2D crystal, to obtain monolayer mosaic heterostructures with atomically sharp heterojunction interfaces. Systematic microstructure and spectroscopic characterizations reveal periodic modulation of chemical compositions, lattice strains and electronic band gaps throughout the mosaic heterostructures. The robust growth of the monolayer mosaic heterostructures with a high level of synthetic control opens a pathway for band structure engineering and spatially modulating the potential landscapes in the atomically thin 2D crystals, establishing a designable material platform for fundamental studies and development of complex devices and integrated circuits from 2D heterostructures.
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Affiliation(s)
- Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Hang Liu
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Song Liu
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Yiliu Wang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China
| | - Bo Li
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
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15
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Song Z, Huang J, Zhang S, Cao Y, Liu C, Zhang R, Zheng Q, Cao L, Huang L, Wang J, Qian T, Ding H, Zhou W, Zhang YY, Lu H, Shen C, Lin X, Du S, Gao HJ. Observation of an Incommensurate Charge Density Wave in Monolayer TiSe_{2}/CuSe/Cu(111) Heterostructure. PHYSICAL REVIEW LETTERS 2022; 128:026401. [PMID: 35089748 DOI: 10.1103/physrevlett.128.026401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Revised: 10/18/2021] [Accepted: 12/14/2021] [Indexed: 06/14/2023]
Abstract
TiSe_{2} is a layered material exhibiting a commensurate (2×2×2) charge density wave (CDW) with a transition temperature of ∼200 K. Recently, incommensurate CDW in bulk TiSe_{2} draws great interest due to its close relationship with the emergence of superconductivity. Here, we report an incommensurate superstructure in monolayer TiSe_{2}/CuSe/Cu(111) heterostructure. Characterizations by low-energy electron diffraction and scanning tunneling microscopy show that the main wave vector of the superstructure is ∼0.41a^{*} or ∼0.59a^{*} (here a^{*} is in-plane reciprocal lattice constant of TiSe_{2}). After ruling out the possibility of moiré superlattices, according to the correlation of the wave vectors of the superstructure and the large indirect band gap below the Fermi level, we propose that the incommensurate superstructure is associated with an incommensurate charge density wave (I-CDW). It is noteworthy that the I-CDW is robust with a transition temperature over 600 K, much higher than that of commensurate CDW in pristine TiSe_{2}. Based on our data and analysis, we present that interface effect may play a key role in the formation of the I-CDW state.
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Affiliation(s)
- Zhipeng Song
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Jierui Huang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuai Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yun Cao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Chen Liu
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Ruizi Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Qi Zheng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Cao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Li Huang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Tian Qian
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Hong Ding
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wu Zhou
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yu-Yang Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Hongliang Lu
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Chengmin Shen
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiao Lin
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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16
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Zhuang Y, Que Y, Xu C, Liu B, Xiao X. Reversible structural transition of two-dimensional copper selenide on Cu(111). NANOTECHNOLOGY 2021; 33:095704. [PMID: 34823227 DOI: 10.1088/1361-6528/ac3d60] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 11/25/2021] [Indexed: 06/13/2023]
Abstract
Structural engineering opens a door to manipulating the structures and thus tuning the properties of two-dimensional materials. Here, we report a reversible structural transition in honeycomb CuSe monolayer on Cu(111) through scanning tunneling microscopy and Auger electron spectroscopy (AES). Direct selenization of Cu(111) gives rise to the formation of honeycomb CuSe monolayers with one-dimensional moiré structures (stripe-CuSe), due to the asymmetric lattice distortions in CuSe induced by the lattice mismatch. Additional deposition of Se combined with post annealing results in the formation of honeycomb CuSe with quasi-ordered arrays of triangular holes (hole-CuSe), namely, the structural transition from stripe-CuSe to hole-CuSe. Further, annealing the hole-CuSe at higher temperature leads to the reverse structural transition, namely from hole-CuSe to stripe-CuSe. AES measurement unravels the Se content change in the reversible structural transition. Therefore, both the Se coverage and annealing temperature play significant roles in the reversible structural transition in CuSe on Cu(111). Our work provides insights in understanding of the structural transitions in two-dimensional materials.
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Affiliation(s)
- Yuan Zhuang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Yande Que
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Chaoqiang Xu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
- Post Doctocral Research Station, Shenzhen Capital Group Co. Ltd, Shen Zhen 518048, People's Republic of China
| | - Bin Liu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Xudong Xiao
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
- School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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17
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Jin J, Xiao T, Zhang YF, Zheng H, Wang H, Wang R, Gong Y, He B, Liu X, Zhou K. Hierarchical MXene/transition metal chalcogenide heterostructures for electrochemical energy storage and conversion. NANOSCALE 2021; 13:19740-19770. [PMID: 34821248 DOI: 10.1039/d1nr05799e] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
MXenes have gained rapidly increasing attention owing to their two-dimensional (2D) layered structures and unique mechanical and physicochemical properties. However, MXenes have some intrinsic limitations (e.g., the restacking tendency of the 2D structure) that hinder their practical applications. Transition metal chalcogenide (TMC) materials such as SnS, NiS, MoS2, FeS2, and NiSe2 have attracted much interest for energy storage and conversion by virture of their earth-abundance, low costs, moderate overpotentials, and unique layered structures. Nonetheless, the intrinsic poor electronic conductivity and huge volume change of TMC materials during the alkali metal-ion intercalation/deintercalation process cause fast capacity fading and poor-rate and poor-cycling performances. Constructing heterostructures based on metallic conductive MXenes and highly electrochemically active TMCs is a promising and effective strategy to solve these problems and enhance the electrochemical performances. This review highlights and discusses the recent research development of MXenes and hierarchical MXene/TMC heterostructures, with a focus on the synthesis strategies, surface/heterointerface engineering, and potential applications for lithium-ion batteries, sodium-ion batteries, lithium-sulfur batteries, supercapacitors, electrocatalysis, and photocatalysis. The critical challenges and perspectives of the future development of MXenes and hierarchical MXene/TMC heterostructures for electrochemical energy storage and conversion are forecasted.
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Affiliation(s)
- Jun Jin
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Tuo Xiao
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - You-Fang Zhang
- Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
| | - Han Zheng
- Environmental Process Modeling Centre, Nanyang Environment and Water Research Institute, Nanyang Technological University, Singapore 637141.
| | - Huanwen Wang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Rui Wang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Yansheng Gong
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Beibei He
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Xianhu Liu
- National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China
| | - Kun Zhou
- Environmental Process Modeling Centre, Nanyang Environment and Water Research Institute, Nanyang Technological University, Singapore 637141.
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
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18
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Wang P, He D, Wang Y, Zhang X, He X, He J, Zhao H. Ultrafast Interlayer Charge Transfer between Bilayer PtSe 2 and Monolayer WS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57822-57830. [PMID: 34797636 DOI: 10.1021/acsami.1c18189] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Interlayer charge transfer (CT) between PtSe2 and WS2 is studied experimentally. Layer-selective pump-probe and photoluminescence quenching measurements reveal ultrafast interlayer CT in the heterostructure formed by bilayer PtSe2 and monolayer WS2, confirming its type-II band alignment. The CT facilitates the formation of the interlayer excitons with a lifetime of several hundred ps to 1 ns, a diffusion coefficient of 0.9 cm2 s-1, and a diffusion length reaching 200 nm. These results demonstrate the integration of PtSe2 with other materials in van der Waals heterostructures with novel charge-transfer properties and help develop fundamental understanding on the performance of various optoelectronic devices based on heterostructures involving PtSe2.
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Affiliation(s)
- Pengzhi Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jiaqi He
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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19
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Lu J, Niu G, Ren X, Bao D, Chen H, Yang H, Lin X, Du S, Gao HJ. Controllable fabrication and photocatalytic performance of nanoscale single-layer MoSe 2 islands with substantial edges on an Ag(111) substrate. NANOSCALE 2021; 13:19165-19171. [PMID: 34780595 DOI: 10.1039/d1nr05641g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as new electrocatalysts and photocatalysts. The edge sites of 2D TMDs show high catalytic activity and are thus favored at the catalyst surface over TMD inert basal planes. However, 2D TMDs that predominantly expose edges are thermodynamically unfavorable, limiting the number of edge sites at the surface. Herein, we demonstrate a controllable synthesis strategy of single-layer 2D MoSe2 islands with a lateral size of approximately 5-12 nm on an Ag(111) substrate by pre-deposition of excess Se atoms. The surplus Se atoms react with the Ag(111) substrate and form silver selenide compounds to separate MoSe2 islands and further prevent MoSe2 islands from growing up. The nanoscale MoSe2 islands greatly increase the ratio of exposed edge sites relative to the basal plane sites, which leads to excellent photocatalytic activity for the degradation of a methylene blue (MB) organic pollutant. This work paves the way to limit the size of 2D TMDs at the nanoscale and enables new opportunities for enhancing the catalytic activity of 2D TMD materials.
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Affiliation(s)
- Jianchen Lu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650090, P. R. China
| | - Gefei Niu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650090, P. R. China
| | - Xiao Ren
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Deliang Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Hui Chen
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Xiao Lin
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, P. R. China
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20
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Crasto de Lima F, Fazzio A. At the Verge of Topology: Vacancy-Driven Quantum Spin Hall in Trivial Insulators. NANO LETTERS 2021; 21:9398-9402. [PMID: 34756041 DOI: 10.1021/acs.nanolett.1c02458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Vacancies in materials structure─lowering its atomic density─take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically nontrivial phase. Within an ab initio approach we explore topological transition dependence with the vacancy density in transition metal dichalcogenides. As a case of study, we focus on the PtSe2, for which the pristine form is a trivial semiconductor with an energy gap of 1.2 eV. The vacancies states lead to a large topological gap of 180 meV within the pristine system gap. We derive an effective model describing this topological phase in other transition metal dichalcogenide systems. The mechanism driving the topological phase allows the construction of backscattering protected metallic channels embedded in a semiconducting host.
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Affiliation(s)
- Felipe Crasto de Lima
- Brazilian Nanotechnology National Laboratory, CNPEM, 13083-970, Campinas, SP, Brazil
- Ilum School of Science, CNPEM, 13083-970, Campinas, SP, Brazil
| | - Adalberto Fazzio
- Brazilian Nanotechnology National Laboratory, CNPEM, 13083-970, Campinas, SP, Brazil
- Ilum School of Science, CNPEM, 13083-970, Campinas, SP, Brazil
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22
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A DFT Investigation on the Electronic Structures and Au Adatom Assisted Hydrogenation of Graphene Nanoflake Array. Chem Res Chin Univ 2021. [DOI: 10.1007/s40242-021-1163-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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23
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Mahynski NA, Shen VK. Symmetry-derived structure directing agents for two-dimensional crystals of arbitrary colloids. SOFT MATTER 2021; 17:7853-7866. [PMID: 34382053 PMCID: PMC9793339 DOI: 10.1039/d1sm00875g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We derive properties of self-assembling rings which can template the organization of an arbitrary colloid into any periodic symmetry in two Euclidean dimensions. By viewing this as a tiling problem, we illustrate how the shape and chemical patterning of these rings are derivable, and are explicitly reflected by the symmetry group's orbifold symbol. We performed molecular dynamics simulations to observe their self-assembly and found 5 different characteristics which could be easily rationalized on the basis of this symbol. These include systems which undergo chiral phase separation, are addressably complex, exhibit self-limiting growth into clusters, form ordered "rods" in only one-dimension akin to a smectic phase, and those from symmetry groups which are pluripotent and allow one to select rings which exhibit different behaviors. We discuss how the curvature of the ring's edges plays an integral role in achieving correct self-assembly, and illustrate how to obtain these shapes. This provides a method for patterning colloidal systems at interfaces without explicitly programming this information onto the colloid itself.
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Affiliation(s)
- Nathan A Mahynski
- Chemical Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8320, USA.
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24
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Cao B, Ye Z, Yang L, Gou L, Wang Z. Recent progress in Van der Waals 2D PtSe 2. NANOTECHNOLOGY 2021; 32:412001. [PMID: 34157685 DOI: 10.1088/1361-6528/ac0d7c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Accepted: 06/22/2021] [Indexed: 06/13/2023]
Abstract
As a new member in two-dimensional (2D) transition metal dichalcogenides (TMDCs) family, platinum diselenium (PtSe2) has many excellent properties, such as the layer-dependent band gap, high carrier mobility, high photoelectrical coupling, broadband response, etc, thus it shows good promising application in room temperature photodetectors, broadband photodetectors, transistors and other fields. Furthermore, compared with other TMDCs, PtSe2is chemical inert in ambient, showing nano-devices potential with higher performance and stability. However, up to now, the synthesis and its device applications are in its early stage. This review systematically summarized the state of the art of PtSe2from its structure, property, synthesis and potential application. Finally, the current challenges and future perspectives are outlined for the applications of 2D PtSe2.
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Affiliation(s)
- Banglin Cao
- College of Materials Science and Engineering, Sichuan University, Chengdu-610065, People's Republic of China
| | - Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu-610065, People's Republic of China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu-610065, People's Republic of China
| | - Li Gou
- College of Materials Science and Engineering, Sichuan University, Chengdu-610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu-610065, People's Republic of China
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Daneshmandi S, Lyu Y, Salavati-Fard T, Yuan H, Adnani M, Grabow LC, Chu CW. Atomic Properties of Monoclinic Ag 2Se Thin Film Grown on SrTiO 3 Substrate by Molecular Beam Epitaxy. J Phys Chem Lett 2021; 12:4140-4147. [PMID: 33890797 DOI: 10.1021/acs.jpclett.1c01016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Silver chalcogenides have attracted a great deal of interest due to their promise for exhibiting novel topological properties. Using scanning tunneling microscopy/spectroscopy (STM/S), we have characterized the atomic structure and electronic properties of a monoclinic Ag2Se thin film, similar to β-Ag2Te, grown on a SrTiO3 (STO)(001) substrate by molecular beam epitaxy (MBE). Three different types of Ag2Se atomic terminations are observed on the surface: (i) homogeneous hexagonal-like, (ii) rough mixed, and (iii) flat zigzag-striped structures. Structural analysis indicates that the different atomic terminations stem from different growth directions, which can be attributed to the lattice mismatch between the substrate and the Ag2Se film. STS analysis of these atomic terminations uncovers different features near the Fermi level, indicating constituent- and direction-dependent electronic properties. This Letter presents a practical method to grow monoclinic thin film Ag2Se and provides insight into its physical properties.
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Affiliation(s)
- Samira Daneshmandi
- Department of Physics and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Yanfeng Lyu
- Department of Physics and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Taha Salavati-Fard
- Department of Chemical and Biomolecular Engineering and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Hanming Yuan
- Department of Physics and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Moein Adnani
- Department of Physics and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Lars C Grabow
- Department of Chemical and Biomolecular Engineering and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
| | - Ching-Wu Chu
- Department of Physics and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, Texas 77204, United States
- Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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26
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Zhang Q, Huang Z, Hou Y, Yuan P, Xu Z, Yang H, Song X, Chen Y, Yang H, Zhang T, Liu L, Gao HJ, Wang Y. Tuning Molecular Superlattice by Charge-Density-Wave Patterns in Two-Dimensional Monolayer Crystals. J Phys Chem Lett 2021; 12:3545-3551. [PMID: 33818110 DOI: 10.1021/acs.jpclett.1c00230] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Charge density wave (CDW) in two-dimensional (2D) crystals plays a vital role in tuning the interface structures and properties. However, how the CDW tunes the self-assembled molecular superlattice still remains unclear. In this study, we investigated the self-assembled manganese phthalocyanine (MnPc) molecular superlattice on single-layered 1T- and 2H-NbSe2 crystals under regulation by distinct CDW patterns. We observe that, in low coverage, MnPc molecules preferentially adsorb on 2H-NbSe2 compared to 1T-NbSe2. With increasing coverage, MnPc can form a highly ordered superlattice on 2H-NbSe2; however, it is randomly distributed on 1T-NbSe2. We reveal a perfect geometric commensurability between the molecular superlattice and intrinsic CDW pattern in 2H-NbSe2 and a poor commensurability for that of 1T-NbSe2. We believe that the subtly different geometric commensurability dominates the different adsorption and arrangement of the molecular superlattices on 2D CDW patterns. Our study provides a pioneering approach for tuning the molecular superlattices using the CDW patterns.
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Affiliation(s)
- Quanzhen Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yanhui Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Peiwen Yuan
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Ziqiang Xu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Han Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
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Li J, Joseph T, Ghorbani-Asl M, Kolekar S, Krasheninnikov AV, Batzill M. Mirror twin boundaries in MoSe 2 monolayers as one dimensional nanotemplates for selective water adsorption. NANOSCALE 2021; 13:1038-1047. [PMID: 33393546 DOI: 10.1039/d0nr08345c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Water adsorption on transition metal dichalcogenides and other 2D materials is generally governed by weak van der Waals interactions. This results in a hydrophobic character of the basal planes, and defects may play a significant role in water adsorption and water cluster nucleation. However, there is a lack of detailed experimental investigations on water adsorption on defective 2D materials. Here, by combining low-temperature scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations, we study in that context the well-defined mirror twin boundary (MTB) networks separating mirror-grains in 2D MoSe2. These MTBs are dangling bond-free extended crystal modifications with metallic electronic states embedded in the 2D semiconducting matrix of MoSe2. Our DFT calculations indicate that molecular water also interacts similarly weak with these MTBs as with the defect-free basal plane of MoSe2. However, in low temperature STM experiments, nanoscopic water structures are observed that selectively decorate the MTB network. This localized adsorption of water is facilitated by functionalization of the MTBs by hydroxyls formed by dissociated water. Hydroxyls may form by dissociating of water at undercoordinated defects or adsorbing of radicals from the gas phase in the UHV chamber. Our DFT analysis indicates that the metallic MTBs adsorb these radicals much stronger than on the basal plane due to charge transfer from the metallic states into the molecular orbitals of the OH groups. Once the MTBs are functionalized with hydroxyls, molecular water can attach to them, forming water channels along the MTBs. This study demonstrates the role metallic defect states play in the adsorption of water even in the absence of unsaturated bonds that have been so far considered to be crucial for adsorption of hydroxyls or water.
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Affiliation(s)
- Jingfeng Li
- Department of Physics, University of South Florida, Tampa, FL 33647, USA.
| | - Thomas Joseph
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Sadhu Kolekar
- Department of Physics, University of South Florida, Tampa, FL 33647, USA.
| | - Arkady V Krasheninnikov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany and Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Matthias Batzill
- Department of Physics, University of South Florida, Tampa, FL 33647, USA.
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28
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Zhou D, Li H, Bu S, Xin B, Jiang Y, Si N, Sun J, Ji Q, Huang H, Li H, Niu T. Phase Engineering of Epitaxial Stanene on a Surface Alloy. J Phys Chem Lett 2021; 12:211-217. [PMID: 33325714 DOI: 10.1021/acs.jpclett.0c03311] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Stanene is a notable two-dimensional topological insulator with a large spin-orbit-coupling-induced band gap. However, the formation of surface alloy intermediates during the epitaxial growth on noble metal substrates prevents the as-grown stanene from preserving its intrinsic electronic states. Here, we show that an intentionally prepared 3×3Au2Sn(111) alloy surface is a suitable inert substrate for growing stanene without the further formation of a complicated surface alloy by scanning tunneling microscopy. The Sn tetramer and clover-shaped Sn pentamer are intermediates for the black-phosphorene-like Sn film at a substrate temperature of <420 K, which transforms to a blue-phosphorene-like stanene with a lattice constant of 0.50 nm above 500 K. First-principles calculations reveal that the epitaxial Sn layer exhibits a lattice registry growth mode and holds a direct energy gap of ∼0.4 eV. Furthermore, interfacial charge-transfer-induced significant Rashba splitting in its electronic structure gives it great potential in spintronic applications.
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Affiliation(s)
- Dechun Zhou
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Heping Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Saiyu Bu
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Benwu Xin
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yixuan Jiang
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Nan Si
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Jiao Sun
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Qingmin Ji
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Han Huang
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, China
| | - Hui Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Tianchao Niu
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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29
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Kim J, Park J, Kim D, Di Serio M, Jung OS. Stepwise coordination isomerism of 2D networks: adsorption of diiodomethane into crystals and recognition in SCSC mode. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00540e] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
3CH2Cl2·2C2H5OH@[CdI2L] with a new 2D topology of {43·62·8} are isomerized into new single crystals of 4C4H8O@[CdI2L]. Interestingly, both crystals are integral to an efficient and tolerant matrix for recognition of diiodomethane in the SCSC mode.
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Affiliation(s)
- Junhee Kim
- Department of Chemistry
- Pusan National University
- Busan 46241
- Republic of Korea
| | - Junmyeong Park
- Department of Chemistry
- Pusan National University
- Busan 46241
- Republic of Korea
| | - Dongwon Kim
- Department of Chemistry
- Pusan National University
- Busan 46241
- Republic of Korea
| | - Martino Di Serio
- Department of Chemical Sciences
- University of Naples Federico II
- Naples
- Italy
| | - Ok-Sang Jung
- Department of Chemistry
- Pusan National University
- Busan 46241
- Republic of Korea
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30
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Guo W, Chi K, Yan J, Bao L, Wang S, Liu Y. Integrated ionic sieving channels from engineering ordered monolayer two-dimensional crystallite structures. Sci Bull (Beijing) 2020; 65:1356-1362. [PMID: 36659214 DOI: 10.1016/j.scib.2020.04.017] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2020] [Revised: 03/03/2020] [Accepted: 03/24/2020] [Indexed: 02/06/2023]
Abstract
Atomically thin solid-state channels enabling selective molecular transport could potentially be used in a variety of separation and energy conversion applications. The density of channels, their height, distance and edge structure are the key factors that dramatically impact the selective transport performance. However, such channels with small constrictions and atomic precision have been limited to proof-of-concept demonstrations based on microscale two-dimensional (2D) crystal stripes. Here, we report the engineering of highly ordered, scalable monolayer graphene crystallite arrays by chemical vapor deposition (CVD) method with a modified anisotropic etching approach. The size, shape, distance and edge structure of the graphene crystallite arrays in a large area could be delicately controlled through tailoring the synthetic parameters. This array structure can act as pillars to prop up a smooth single-crystal graphene film, and the fabricated integrated angstrom-size (3.4 Å) channels allow water transport but exclude hydrated ions, demonstrating potential in selective ionic sieving and nanofiltration practice.
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Affiliation(s)
- Wei Guo
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Kai Chi
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jiahao Yan
- Institute of Physics, Chinese Academy of Sciences, Beijing 100010, China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100010, China
| | - Shuai Wang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Materials Science, Fudan University, Shanghai 200433, China.
| | - Yunqi Liu
- Department of Materials Science, Fudan University, Shanghai 200433, China.
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31
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Gong Y, Lin Z, Chen YX, Khan Q, Wang C, Zhang B, Nie G, Xie N, Li D. Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges. NANO-MICRO LETTERS 2020; 12:174. [PMID: 34138169 PMCID: PMC7770737 DOI: 10.1007/s40820-020-00515-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/04/2020] [Indexed: 05/25/2023]
Abstract
In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.
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Affiliation(s)
- Youning Gong
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhitao Lin
- Faculty of Information Technology, Macau University of Science and Technology, Macau, 519020, People's Republic of China
| | - Yue-Xing Chen
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Cong Wang
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guohui Nie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ni Xie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Delong Li
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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32
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Wrasse EO, Garcia IM, Baierle RJ, de Souza VS, Scholten JD, Collares FM. Quantum chemistry study of the interaction between ionic liquid-functionalized TiO 2 quantum dots and methacrylate resin: Implications for dental materials. Biophys Chem 2020; 265:106435. [PMID: 32763513 DOI: 10.1016/j.bpc.2020.106435] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 06/26/2020] [Accepted: 07/14/2020] [Indexed: 02/03/2023]
Abstract
Quantum Chemistry calculations within the density functional Theory (DFT) are a powerful feature to obtain the atomistic and molecular properties of macromolecules such as polymers and nanoparticles. DFT calculations are essential to understand the stability of new composite materials. In this work, DFT with the Local Density Approximation (LDA) and norm-conserving pseudopotentials is used to analyze the energetic stability as well the electronic properties when titanium dioxide quantum dots (TiO2QDs) are added to an adhesive resin (methacrylate - HEMA - and dimethacrylate - BisGMA - monomers), which presents reliable physical, chemical, and biological properties in dentistry. The ionic liquid 1-n-butyl-3-methylimidazolium tetrafluoroborate (BMI.BF4) was previously used to functionalize the quantum dots, forming the complex system TiO2QDs/BMI.BF4. DFT provides the most stable configuration through binding energies and bond distances analysis. Our results show that van der Waals interactions between BisGMA and HEMA may contribute to the stabilization of the interaction between the resin and TiO2QDs/BMI.BF4. Furthermore, according to experimental results, the calculations show that the presence of the ionic liquid increases the quantum dots and resin interactions (binding energies), suggesting that the ionic liquid is important to stabilize the TiO2QDs/BMI.BF4-resin composite.
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Affiliation(s)
- Ernesto Osvaldo Wrasse
- Universidade Tecnológica Federal do Paraná, Campus Toledo, Cristo Rei, 19, 85902-040 Toledo, PR, Brazil
| | - Isadora Martini Garcia
- Department of Dental Materials, School of Dentistry, Federal University of Rio Grande do Sul, Ramiro Barcelos, 2492, Rio Branco, 90035-003, Porto Alegre, RS, Brazil.
| | - Rogério José Baierle
- Universidade Federal de Santa Maria, Av. Roraima 13, Santa Maria 95800-900, Brazil.
| | - Virgínia Serra de Souza
- Laboratory of Molecular Catalysis, Institute of Chemistry, Federal University of Rio Grande do Sul, Bento Gonçalves, 9500, Agronomia, 91501-970, Porto Alegre, RS, Brazil
| | - Jackson Damiani Scholten
- Laboratory of Molecular Catalysis, Institute of Chemistry, Federal University of Rio Grande do Sul, Bento Gonçalves, 9500, Agronomia, 91501-970, Porto Alegre, RS, Brazil.
| | - Fabrício Mezzomo Collares
- Dental Materials Laboratory, School of Dentistry, Federal University of Rio Grande do Sul, Ramiro Barcelos, 2492, Rio Branco, 90035-003, Porto Alegre, RS, Brazil.
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Kempt R, Kuc A, Heine T. Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides. Angew Chem Int Ed Engl 2020; 59:9242-9254. [PMID: 32065703 PMCID: PMC7463173 DOI: 10.1002/anie.201914886] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Indexed: 11/07/2022]
Abstract
Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.
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Affiliation(s)
- Roman Kempt
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Institute of Resource EcologyHelmholtz-Zentrum Dresden-RossendorfPermoserstrasse 1504318LeipzigGermany
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Jasper-Tönnies T, Gruber M, Ulrich S, Herges R, Berndt R. Coverage-Controlled Superstructures of C 3 -Symmetric Molecules: Honeycomb versus Hexagonal Tiling. Angew Chem Int Ed Engl 2020; 59:7008-7017. [PMID: 32106353 PMCID: PMC7216838 DOI: 10.1002/anie.202001383] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2020] [Indexed: 11/06/2022]
Abstract
The competition between honeycomb and hexagonal tiling of molecular units can lead to large honeycomb superstructures on surfaces. Such superstructures exhibit pores that may be used as 2D templates for functional guest molecules. Honeycomb superstructures of molecules that comprise a C3 symmetric platform on Au(111) and Ag(111) surfaces are presented. The superstructures cover nearly mesoscopic areas with unit cells containing up to 3000 molecules, more than an order of magnitude larger than previously reported. The unit cell size may be controlled by the coverage. A fairly general model was developed to describe the energetics of honeycomb superstructures built from C3 symmetric units. Based on three parameters that characterize two competing bonding arrangements, the model is consistent with the present experimental data and also reproduces various published results. The model identifies the relevant driving force, mostly related to geometric aspects, of the pattern formation.
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Affiliation(s)
- Torben Jasper-Tönnies
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität, 24098, Kiel, Germany
| | - Manuel Gruber
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität, 24098, Kiel, Germany
| | - Sandra Ulrich
- Otto-Diels-Institut für Organische Chemie, Christian-Albrechts-Universität, 24098, Kiel, Germany
| | - Rainer Herges
- Otto-Diels-Institut für Organische Chemie, Christian-Albrechts-Universität, 24098, Kiel, Germany
| | - Richard Berndt
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität, 24098, Kiel, Germany
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35
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Yuan J, Chen Y, Xie Y, Zhang X, Rao D, Guo Y, Yan X, Feng YP, Cai Y. Squeezed metallic droplet with tunable Kubo gap and charge injection in transition metal dichalcogenides. Proc Natl Acad Sci U S A 2020; 117:6362-6369. [PMID: 32161125 PMCID: PMC7104306 DOI: 10.1073/pnas.1920036117] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Shrinking the size of a bulk metal into nanoscale leads to the discreteness of electronic energy levels, the so-called Kubo gap δ. Renormalization of the electronic properties with a tunable and size-dependent δ renders fascinating photon emission and electron tunneling. In contrast with usual three-dimensional (3D) metal clusters, here we demonstrate that Kubo gap δ can be achieved with a two-dimensional (2D) metallic transition metal dichalcogenide (i.e., 1T'-phase MoTe2) nanocluster embedded in a semiconducting polymorph (i.e., 1H-phase MoTe2). Such a 1T'/1H MoTe2 nanodomain resembles a 3D metallic droplet squeezed in a 2D space which shows a strong polarization catastrophe while simultaneously maintaining its bond integrity, which is absent in traditional δ-gapped 3D clusters. The weak screening of the host 2D MoTe2 leads to photon emission of such pseudometallic systems and a ballistic injection of carriers in the 1T'/1H/1T' homojunctions which may find applications in sensors and 2D reconfigurable devices.
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Affiliation(s)
- Jiaren Yuan
- College of Science, Jiangsu University, 212013 Zhenjiang, China
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Yuanping Chen
- College of Science, Jiangsu University, 212013 Zhenjiang, China
| | - Yuee Xie
- College of Science, Jiangsu University, 212013 Zhenjiang, China
| | - Xiaoyu Zhang
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Dewei Rao
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Yandong Guo
- College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, 210046 Nanjing, China
| | - Xiaohong Yan
- College of Science, Jiangsu University, 212013 Zhenjiang, China;
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551 Singapore;
- Centre for Advanced Two-Dimensional Materials, National University of Singapore, 117551 Singapore
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
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Shah J, Sohail HM, Uhrberg RIG, Wang W. Two-Dimensional Binary Honeycomb Layer Formed by Ag and Te on Ag(111). J Phys Chem Lett 2020; 11:1609-1613. [PMID: 32037823 PMCID: PMC7343276 DOI: 10.1021/acs.jpclett.0c00123] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2020] [Accepted: 02/10/2020] [Indexed: 06/01/2023]
Abstract
Inspired by the unique properties of graphene, research efforts have broadened to investigations of various other two-dimensional materials with the aim of exploring their properties for future applications. Our combined experimental and theoretical study confirms the existence of a binary honeycomb structure formed by Ag and Te on Ag(111). Low-energy electron diffraction shows sharp spots which provide evidence of an undistorted AgTe layer. Band structure data obtained by angle-resolved photoelectron spectroscopy are closely reproduced by first-principles calculations, using density functional theory (DFT). This confirms the formation of a honeycomb structure with one Ag and one Te atom in the unit cell. In addition, the theoretical band structure reproduces also the finer details of the experimental bands, such as a split of one of the AgTe bands.
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Li P, Cai TY. Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect. Phys Chem Chem Phys 2020; 22:549-555. [PMID: 31840708 DOI: 10.1039/c9cp05132e] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The quantum anomalous Hall effect is an intriguing quantum state that exhibits chiral edge states in the absence of a magnetic field. While the search for quantum anomalous Hall insulators is still active, researchers mainly search for the systems containing a magnetic atom. Here, based on first-principles density functional theory, we predict a new family of Chern insulators with fully spin-polarized quadratic px,y non-Dirac bands in the alkaline earth metal BaX (X = Si, Ge, and Sn) system. We show that BaX monolayer has a half-metallic ferromagnetic ground state. The ferromagnetism mainly originates from the p orbitals of Si, Ge and Sn atoms. The 2D BaSn monolayer exhibits a large magnetocrystalline anisotropic energy of 12.20 meV per cell and a nontrivial band gap of 159.10 meV. Interestingly, both the chiral edge current direction and the sign of Chern number can be tuned by doping. Furthermore, the 4% compressive strain in the 2D BaX systems can drive a structural phase transition but the nontrivial topological properties remain reserved. Our findings not only extend the novel topological physics but also provide fascinating opportunities for the realization of the quantum anomalous Hall effect experimentally.
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Affiliation(s)
- Ping Li
- School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China.
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38
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Gao L, Sun JT, Sethi G, Zhang YY, Du S, Liu F. Orbital design of topological insulators from two-dimensional semiconductors. NANOSCALE 2019; 11:22743-22747. [PMID: 31774416 DOI: 10.1039/c9nr06859g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials have attracted much attention because they exhibit various intrinsic properties, which are, however, usually not interchangeable. Here we propose a generic approach to convert 2D semiconductors to 2D topological insulators (TIs) via atomic adsorption. The approach is underlined by an orbital design principle that involves introducing an extrinsic s-orbital state of the adsorbate into the intrinsic sp-bands of a 2D semiconductor, so as to induce s-p band inversion for a TI phase, as demonstrated by tight-binding model analyses. Based on first-principles calculations, we successfully apply this approach to convert CuS, CuSe and CuTe into TIs by adsorbing one adatom per unit cell of Na, Na0.5K0.5 and K as well as Rb and Cs. Moreover, if the chalcogens in the 2D semiconductor have a decreasing ability of accepting electrons, the adsorbates should have an increasing ability of donating electrons. Our findings open a new door to discovering TIs by predictive material design beyond finding preexisting TIs.
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Affiliation(s)
- Lei Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China.
| | - Jia-Tao Sun
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China. and School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Gurjyot Sethi
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
| | - Yu-Yang Zhang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China. and CAS Center for Excellence in Topological Quantum Computation, Beijing 100190, P.R. China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China. and CAS Center for Excellence in Topological Quantum Computation, Beijing 100190, P.R. China
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
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Polymorphic cobalt diselenide as extremely stable electrocatalyst in acidic media via a phase-mixing strategy. Nat Commun 2019; 10:5338. [PMID: 31767845 PMCID: PMC6877578 DOI: 10.1038/s41467-019-12992-y] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2019] [Accepted: 10/07/2019] [Indexed: 12/03/2022] Open
Abstract
Many platinum group metal-free inorganic catalysts have demonstrated high intrinsic activity for diverse important electrode reactions, but their practical use often suffers from undesirable structural degradation and hence poor stability, especially in acidic media. We report here an alkali-heating synthesis to achieve phase-mixed cobalt diselenide material with nearly homogeneous distribution of cubic and orthorhombic phases. Using water electroreduction as a model reaction, we observe that the phase-mixed cobalt diselenide reaches the current density of 10 milliamperes per square centimeter at overpotential of mere 124 millivolts in acidic electrolyte. The catalyst shows no sign of deactivation after more than 400 h of continuous operation and the polarization curve is well retained after 50,000 potential cycles. Experimental and computational investigations uncover a boosted covalency between Co and Se atoms resulting from the phase mixture, which substantially enhances the lattice robustness and thereby the material stability. The findings provide promising design strategy for long-lived catalysts in acid through crystal phase engineering. Noble-metal-free catalysts often show stability issues in acidic media due to structural degradation. Here authors show that phase-mixed engineering of cobalt diselenide electrocatalysts can enable greater covalency of Co-Se bonds and improve robustness for catalyzing hydrogen evolution in acid.
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40
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Berry J, Ristić S, Zhou S, Park J, Srolovitz DJ. The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials. Nat Commun 2019; 10:5210. [PMID: 31729363 PMCID: PMC6858317 DOI: 10.1038/s41467-019-12945-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2019] [Accepted: 09/27/2019] [Indexed: 12/15/2022] Open
Abstract
The properties of 2D materials can be broadly tuned through alloying and phase and strain engineering. Shape programmable materials offer tremendous functionality, but sub-micron objects are typically unachievable with conventional thin films. Here we propose a new approach, combining phase/strain engineering with shape programming, to form 3D objects by patterned alloying of 2D transition metal dichalcogenide (TMD) monolayers. Conjugately, monolayers can be compositionally patterned using non-flat substrates. For concreteness, we focus on the TMD alloy MoSe[Formula: see text]S[Formula: see text]; i.e., MoSeS. These 2D materials down-scale shape/composition programming to nanoscale objects/patterns, provide control of both bending and stretching deformations, are reversibly actuatable with electric fields, and possess the extraordinary and diverse properties of TMDs. Utilizing a first principles-informed continuum model, we demonstrate how a variety of shapes/composition patterns can be programmed and reversibly modulated across length scales. The vast space of possible designs and scales enables novel material properties and thus new applications spanning flexible electronics/optics, catalysis, responsive coatings, and soft robotics.
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Affiliation(s)
- Joel Berry
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.,Materials Science Division, Lawrence Livermore National Laboratory, Livermore, CA, 94550, USA
| | - Simeon Ristić
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Songsong Zhou
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Jiwoong Park
- Department of Chemistry, Institute for Molecular Engineering, James Franck Institute, University of Chicago, Chicago, IL, USA
| | - David J Srolovitz
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA. .,Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA, 19104, USA. .,Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, P. R. China.
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41
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Si N, Shen T, Zhou D, Tang Q, Jiang Y, Ji Q, Huang H, Liu W, Li S, Niu T. Imaging and Dynamics of Water Hexamer Confined in Nanopores. ACS NANO 2019; 13:10622-10630. [PMID: 31487147 DOI: 10.1021/acsnano.9b04835] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Epitaxial two-dimensional (2D) nanostructures with regular patterns show great promise as templates for adsorbate confinement. Prospectively, employing 2D semiconductors with reduced density of states leads to a long excited-state lifetime that allows us to directly image the dynamics of the adsorbate. We show that epitaxial blue phosphorene (blueP) on Au(111) provides such a platform to trap water molecules in the periodic nanopores without formation of strong bonds. The trapped water aggregate is tentatively assigned to a hexamer based on our scanning tunneling microscopy studies and first-principles calculations. Real-space observation of conformational switching of the hexamer induced by inelastic electrons is achieved by using low-temperature scanning tunneling microscopy with molecular resolution. We found a localized interfacial charge rearrangement between the water hexamer and P atoms underneath that is responsible for the reversible desorption and adsorption of water molecules by changing the sample bias polarity from positive to negative, offering a promising strategy for engineering the electronic properties of blueP.
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Affiliation(s)
- Nan Si
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
| | - Tao Shen
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , People's Republic of China
| | - Dechun Zhou
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
| | - Qin Tang
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
| | - Yixuan Jiang
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
| | - Qingmin Ji
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
| | - Han Huang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, College of Physics and Electronics , Central South University , Changsha 410083 , People's Republic of China
| | - Wei Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , People's Republic of China
| | - Shuang Li
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , People's Republic of China
| | - Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering , Nanjing University of Science & Technology , No. 200 , Xiaolingwei, Nanjing 210094 , People's Republic of China
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42
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Liu ZL, Lei B, Zhu ZL, Tao L, Qi J, Bao DL, Wu X, Huang L, Zhang YY, Lin X, Wang YL, Du S, Pantelides ST, Gao HJ. Spontaneous Formation of 1D Pattern in Monolayer VSe 2 with Dispersive Adsorption of Pt Atoms for HER Catalysis. NANO LETTERS 2019; 19:4897-4903. [PMID: 30973231 DOI: 10.1021/acs.nanolett.9b00889] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Creation of functional patterns in two-dimensional (2D) materials provides opportunities to extend their potential for applications. Transition-metal dichalcogenides (TMDCs) are suitable 2D materials for pattern generation because of properties including alterable polymorphic phases, easy chalcogen-vacancy formation, metal-atom insertion, and alloying. Such patterning can be used for selective functionalization. Here we report the spontaneous formation of long-range, well-ordered 1D patterns in monolayer vanadium diselenide (VSe2) by a single annealing stage during growth. Atomic-resolution images in real space combined with density-functional-theory (DFT) calculations reveal the 1D features of patterned VSe2. Further experimental characterization of the intermediate states in the growth process confirm the spontaneous formation of the 1D pattern by annealing-induced Se-deficient linear defects. The 1D pattern can be reversibly transformed to homogenous VSe2 monolayer by reintroducing Se atoms. Moreover, additional experiments demonstrate that a dispersive deposition of Pt atoms along the 1D structures of patterned VSe2 is achieved, while DFT calculations find that their catalytic activity for hydrogen evolution reaction (HER) is as good as that of Pt surfaces. The formation of long-range, well-ordered 1D patterns not only demonstrates an effective way of dimension modulation in 2D materials but also enriches the potential of intrinsically patterned 2D materials for promising catalytic activities.
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Affiliation(s)
- Zhong-Liu Liu
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Bao Lei
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Zhi-Li Zhu
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Lei Tao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- Department of Physics and Astronomy , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Jing Qi
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - De-Liang Bao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- Department of Physics and Astronomy , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Xu Wu
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Li Huang
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
| | - Yu-Yang Zhang
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Xiao Lin
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Ye-Liang Wang
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- School of Information and Electronics , Beijing Institute of Technology , Beijing 100081 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
| | - Sokrates T Pantelides
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- Department of Physics and Astronomy , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China
- CAS Center for Excellence in Topological Quantum Computation , Beijing 100049 , China
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43
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He X, Zhang L, Chua R, Wong PKJ, Arramel A, Feng YP, Wang SJ, Chi D, Yang M, Huang YL, Wee ATS. Selective self-assembly of 2,3-diaminophenazine molecules on MoSe 2 mirror twin boundaries. Nat Commun 2019; 10:2847. [PMID: 31253803 PMCID: PMC6599086 DOI: 10.1038/s41467-019-10801-0] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2018] [Accepted: 06/03/2019] [Indexed: 11/25/2022] Open
Abstract
The control of the density and type of line defects on two-dimensional (2D) materials enable the development of new methods to tailor their physical and chemical properties. In particular, mirror twin boundaries (MTBs) on transition metal dichacogenides have attracted much interest due to their metallic state with charge density wave transition and spin-charge separation property. In this work, we demonstrate the self-assembly of 2,3-diaminophenazine (DAP) molecule porous structure with alternate L-type and T-type aggregated configurations on the MoSe2 hexagonal wagon-wheel pattern surface. This site-specific molecular self-assembly is attributed to the more chemically reactive metallic MTBs compared to the pristine semiconducting MoSe2 domains. First-principles calculations reveal that the active MTBs couple with amino groups in the DAP molecules facilitating the DAP assembly. Our results demonstrate the site-dependent electronic and chemical properties of MoSe2 monolayers, which can be exploited as a natural template to create ordered nanostructures.
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Affiliation(s)
- Xiaoyue He
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Rebekah Chua
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- NUS Graduate School for Integrative Sciences & Engineering (NGS), National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore
| | - Ping Kwan Johnny Wong
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, Singapore, 117546, Singapore
| | - Arramel Arramel
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Shi Jie Wang
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Dongzhi Chi
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Ming Yang
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore.
| | - Yu Li Huang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore.
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore.
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore.
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, Singapore, 117546, Singapore.
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44
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Si C, Choe D, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photoinduced Vacancy Ordering and Phase Transition in MoTe 2. NANO LETTERS 2019; 19:3612-3617. [PMID: 31096752 DOI: 10.1021/acs.nanolett.9b00613] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We show that non-equilibrium dynamics plays a central role in the photoinduced 2H-to-1T' phase transition of MoTe2. The phase transition is initiated by a local ordering of Te vacancies, followed by a 1T' structural change in the original 2H lattice. The local 1T' region serves as a seed to gather more vacancies into ordering and subsequently induces a further growth of the 1T' phase. Remarkably, this process is controlled by photogenerated excited carriers as they enhance vacancy diffusion, increase the speed of vacancy ordering, and are hence vital to the 1T' phase transition. This mechanism can be contrasted to the current model requiring a collective sliding of a whole Te atomic layer, which is thermodynamically highly unlikely. By uncovering the key roles of photoexcitations, our results may have important implications for finely controlling phase transitions in transition metal dichalcogenides.
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Affiliation(s)
- Chen Si
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , People's Republic of China
- Department of Physics, Applied Physics, & Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Dukhyun Choe
- Department of Physics, Applied Physics, & Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Weiyu Xie
- Department of Physics, Applied Physics, & Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Han Wang
- Department of Physics, Applied Physics, & Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Zhimei Sun
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , People's Republic of China
| | - Junhyeok Bang
- Spin Engineering Physics Team , Korea Basic Science Institute (KBSI) , Daejeon 305-806 , Republic of Korea
| | - Shengbai Zhang
- Department of Physics, Applied Physics, & Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
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45
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Mahynski NA, Pretti E, Shen VK, Mittal J. Using symmetry to elucidate the importance of stoichiometry in colloidal crystal assembly. Nat Commun 2019; 10:2028. [PMID: 31048700 PMCID: PMC6497718 DOI: 10.1038/s41467-019-10031-4] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2018] [Accepted: 04/09/2019] [Indexed: 01/05/2023] Open
Abstract
We demonstrate a method based on symmetry to predict the structure of self-assembling, multicomponent colloidal mixtures. This method allows us to feasibly enumerate candidate structures from all symmetry groups and is many orders of magnitude more computationally efficient than combinatorial enumeration of these candidates. In turn, this permits us to compute ground-state phase diagrams for multicomponent systems. While tuning the interparticle potentials to produce potentially complex interactions represents the conventional route to designing exotic lattices, we use this scheme to demonstrate that simple potentials can also give rise to such structures which are thermodynamically stable at moderate to low temperatures. Furthermore, for a model two-dimensional colloidal system, we illustrate that lattices forming a complete set of 2-, 3-, 4-, and 6-fold rotational symmetries can be rationally designed from certain systems by tuning the mixture composition alone, demonstrating that stoichiometric control can be a tool as powerful as directly tuning the interparticle potentials themselves.
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Affiliation(s)
- Nathan A Mahynski
- Chemical Sciences Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899-8320, USA.
| | - Evan Pretti
- Department of Chemical and Biomolecular Engineering, Lehigh University, 111 Research Drive, Bethlehem, PA, 18015-4791, USA
| | - Vincent K Shen
- Chemical Sciences Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899-8320, USA
| | - Jeetain Mittal
- Department of Chemical and Biomolecular Engineering, Lehigh University, 111 Research Drive, Bethlehem, PA, 18015-4791, USA.
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46
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Liu B, Liu J, Miao G, Xue S, Zhang S, Liu L, Huang X, Zhu X, Meng S, Guo J, Liu M, Wang W. Flat AgTe Honeycomb Monolayer on Ag(111). J Phys Chem Lett 2019; 10:1866-1871. [PMID: 30875475 DOI: 10.1021/acs.jpclett.9b00339] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The intriguing properties of graphene have inspired the pursuit of two-dimensional materials with honeycomb structure. Here we achieved the synthesis of a monolayer transition-metal monochalcogenide AgTe on Ag(111) by tellurization of the substrate. High-resolution scanning tunneling microscopy, combined with low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density functional theory calculations, demonstrates the planar honeycomb structure of AgTe. The first-principles calculations further predict that, protected by the in-plane mirror reflection symmetry, there are two Dirac node-line fermions existing in the free-standing AgTe when spin-orbit coupling (SOC) is ignored. In fact, the SOC leads to the gap opening, resulting in the emergence of the topologically nontrivial quantum spin Hall edge state. Importantly, our experiments evidence the chemical stability of the monolayer AgTe in ambient conditions, making it possible to study AgTe by more ex situ measurements and even to utilize AgTe in future electronic devices.
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Affiliation(s)
- Bing Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Jian Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Guangyao Miao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Siwei Xue
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Shuyuan Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Lixia Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Xiaochun Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Xuetao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Jiandong Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , China
| | - Miao Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , China
- Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Weihua Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
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47
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Jiang J, Li N, Zou J, Zhou X, Eda G, Zhang Q, Zhang H, Li LJ, Zhai T, Wee ATS. Synergistic additive-mediated CVD growth and chemical modification of 2D materials. Chem Soc Rev 2019; 48:4639-4654. [DOI: 10.1039/c9cs00348g] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.
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Affiliation(s)
- Jizhou Jiang
- School of Environmental Ecology and Biological Engineering
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan
- P. R. China
| | - Neng Li
- State Key Laboratory of Silicate Materials for Architectures
- Wuhan University of Technology
- Wuhan
- P. R. China
| | - Jing Zou
- School of Environmental Ecology and Biological Engineering
- School of Chemistry and Environmental Engineering
- Wuhan Institute of Technology
- Wuhan
- P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Goki Eda
- Department of Physics
- National University of Singapore
- Singapore 117542
- Singapore
| | - Qingfu Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Hua Zhang
- Center for Programmable Materials
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Lain-Jong Li
- School of Materials Science and Engineering
- University of New South Wales
- Australia
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan
- P. R. China
| | - Andrew T. S. Wee
- Department of Physics
- National University of Singapore
- Singapore 117542
- Singapore
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48
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Wu ZB, Gao ZY, Chen XY, Xing YQ, Yang H, Li G, Ma R, Wang A, Yan J, Shen C, Du S, Huan Q, Gao HJ. A low-temperature scanning probe microscopy system with molecular beam epitaxy and optical access. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2018; 89:113705. [PMID: 30501315 DOI: 10.1063/1.5046466] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Accepted: 10/18/2018] [Indexed: 05/24/2023]
Abstract
A low-temperature ultra-high vacuum scanning probe microscopy (SPM) system with molecular beam epitaxy (MBE) capability and optical access was conceived, built, and tested in our lab. The design of the whole system is discussed here, with special emphasis on some critical parts. The SPM scanner head takes a modified Pan-type design with improved rigidity and compatible configuration to optical access and can accommodate both scanning tunneling microscope (STM) tips and tuning-fork based qPlus sensors. In the system, the scanner head is enclosed by a double-layer cold room under a bath type cryostat. Two piezo-actuated focus-lens stages are mounted on both sides of the cold room to couple light in and out. The optical design ensures the system's forward compatibility to the development of photo-assisted STM techniques. To test the system's performance, we conducted STM and spectroscopy studies. The herringbone reconstruction and atomic structure of an Au(111) surface were clearly resolved. The dI/dV spectra of an Au(111) surface were obtained at 5 K. In addition, a periodic 2D tellurium (Te) structure was grown on the Au(111) surface using MBE and the atomic structure is clearly resolved by using STM.
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Affiliation(s)
- Ze-Bin Wu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhao-Yan Gao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xi-Ya Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yu-Qing Xing
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huan Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Geng Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ruisong Ma
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Aiwei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiahao Yan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chengmin Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qing Huan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hong-Jun Gao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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49
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Li Z, Zeng Y, Zhou M, Xie B, Zhang J, Wu W. Suppression of magnetoresistance in PtSe 2 microflakes with antidot arrays. NANOTECHNOLOGY 2018; 29:40LT01. [PMID: 30004029 DOI: 10.1088/1361-6528/aad349] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Suppression of magnetoresistance (MR) is meaningful for sensor applications to immure magnetic fields. Herein, we report the observation of suppressed MR in PtSe2 microflakes by introducing the antidot arrays (AAs). We have compared the magnetotransport properties of PtSe2 microflakes before and after milling of AAs. The enhanced resistivity and notable MR suppression were observed while the AAs are milled in the PtSe2 microflakes. Their physical mechanism has been ascribed to the enhanced electron scattering rate due to the additional electron-antidot interactions. This work gave an example to suppress MR in materials by introducing AAs, which may be useful for sensor applications in magnetic fields.
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Affiliation(s)
- Zhaoguo Li
- Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, People's Republic of China
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50
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Liu ZL, Wu X, Shao Y, Qi J, Cao Y, Huang L, Liu C, Wang JO, Zheng Q, Zhu ZL, Ibrahim K, Wang YL, Gao HJ. Epitaxially grown monolayer VSe 2: an air-stable magnetic two-dimensional material with low work function at edges. Sci Bull (Beijing) 2018; 63:419-425. [PMID: 36658936 DOI: 10.1016/j.scib.2018.03.008] [Citation(s) in RCA: 72] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2018] [Revised: 03/07/2018] [Accepted: 03/09/2018] [Indexed: 01/21/2023]
Abstract
Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer two-dimensional (2D) materials, which makes fabrication of new magnetic 2D materials a fascinating issue. Here, we report the growth of monolayer VSe2 by molecular beam epitaxy (MBE) method. Electronic properties measurements by scanning tunneling spectroscopy (STS) method revealed that the as-grown monolayer VSe2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe2. This high-quality monolayer VSe2, a very air-inert 2D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.
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Affiliation(s)
- Zhong-Liu Liu
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Xu Wu
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yan Shao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Jing Qi
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yun Cao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Li Huang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Chen Liu
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Jia-Ou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Qi Zheng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhi-Li Zhu
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Kurash Ibrahim
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Ye-Liang Wang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China; CAS Center for Excellence in Topological Quantum Computation, Beijing 100049, China.
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China; CAS Center for Excellence in Topological Quantum Computation, Beijing 100049, China.
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