1
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Fan A, Zhang Q, Ren Z, Li L, Han Z, Ma W, Shen X, Dong J, Yu X, Geng D, Hu W. Layer Number and Stacking Engineering of MoS 2 Crystals for High-Performance Polarization-Sensitive Photodetector. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39422653 DOI: 10.1021/acsami.4c14501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2024]
Abstract
The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date is largely limited to the lack of effective and controllable growth strategies, prone to the unpredictable stacking orders and randomly distributed nucleation sites. Here, we devise an optimized chemical vapor deposition approach for modulating the MoS2 single crystals from monolayer to multilayer with diverse stacking configurations. Significantly, the phototransistor based on monolayer MoS2 single crystal exhibits an ultrasensitive performance with a high photoresponsivity (R) of 3.3 × 104 A W-1 and a remarkable detectivity (D*) of above 1.7 × 1014 Jones at 405 nm light illumination. Ultralow-frequency and angle-resolved polarized Raman spectroscopy is used to systematically uncover the delicate interlayer interactions and crystallographic anisotropy. Moreover, the polarization-sensitive photodetectors using 1-3L MoS2 show a layer number-dependent anisotropic performance, with dichroism ratios of 1.36, 1.44, and 1.52. This work offers a promising method to not only enable the fabrication of new customized layer-, stacking-, and twist-2D materials but also provides the foundation for the development of advanced polarization-sensitive and optoelectronic devices based on stacking transitions.
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Affiliation(s)
- Aiqing Fan
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Zebin Ren
- Key Laboratory of Organic Solids Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
| | - Ziyi Han
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Weijie Ma
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Xianfeng Shen
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Jichen Dong
- Key Laboratory of Organic Solids Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
| | - Xi Yu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100049, P.R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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2
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Zhang Z, Hocking M, Peng Z, Pendharkar M, Courtney EDS, Hu J, Kastner MA, Goldhaber-Gordon D, Heinz TF, Mannix AJ. Phase-Selective Synthesis of Rhombohedral WS 2 Multilayers by Confined-Space Hybrid Metal-Organic Chemical Vapor Deposition. NANO LETTERS 2024. [PMID: 39373237 DOI: 10.1021/acs.nanolett.4c02766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/08/2024]
Abstract
Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ(2), giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, we report a confined-space, hybrid metal-organic chemical vapor deposition method that preferentially grows 3R-WS2 multilayer films with thickness up to 130 nm. We confirm the 3R stacking structure via polarization-resolved second-harmonic generation characterization and the 3-fold symmetry revealed by anisotropic H2O2 etching. The multilayer 3R WS2 shows a dendritic morphology, which is indicative of diffusion-limited growth. Multilayer regions with large, stepped terraces enable layer-resolved evaluation of the optical properties of 3R-WS2 via Raman, photoluminescence, and differential reflectance spectroscopy. These measurements confirm the interfacial quality and suggest ferroelectric modification of the exciton energies.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Mihir Pendharkar
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Elijah David Solomon Courtney
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Marc A Kastner
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - David Goldhaber-Gordon
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Tony F Heinz
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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3
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Jo MK, Lee E, Moon E, Jang BG, Kim J, Dhakal KP, Oh S, Cho SR, Hasanah N, Yang S, Jeong HY, Kim J, Kang K, Song S. Indirect-To-Direct Bandgap Crossover and Room-Temperature Valley Polarization of Multilayer MoS 2 Achieved by Electrochemical Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2407997. [PMID: 39370590 DOI: 10.1002/adma.202407997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2024] [Revised: 09/21/2024] [Indexed: 10/08/2024]
Abstract
Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin-orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin-valley locking in K or K' valleys, the ultra-short valley lifetime limits their room-temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin-orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1-ethyl-3-methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate-free method, opens up potential applications in valley-selective optoelectronics and valley transistors.
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Affiliation(s)
- Min-Kyung Jo
- Samsung Electronics, Hwaseong, 18448, South Korea
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
| | - Eunji Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Eoram Moon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Bo Gyu Jang
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin, Gyeonggi, 17104, South Korea
| | - Jeongtae Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
| | | | - Saeyoung Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Nurul Hasanah
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
| | - Seungmo Yang
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Republic of South Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Seungwoo Song
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
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4
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Wang J, Huang J, Kaplan D, Zhou X, Tan C, Zhang J, Jin G, Cong X, Zhu Y, Gao X, Liang Y, Zuo H, Zhu Z, Zhu R, Stern A, Liu H, Gao P, Yan B, Yuan H, Peng H. Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect. NATURE NANOTECHNOLOGY 2024; 19:1452-1459. [PMID: 39039120 DOI: 10.1038/s41565-024-01732-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 06/28/2024] [Indexed: 07/24/2024]
Abstract
In the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but there is no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on the ab initio band structures of Bi2O2Se thin films, we can ascribe the only even-integer states in thicker films to the hidden Rasbha effect, where the local inversion-symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one-unit-cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by the top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.
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Affiliation(s)
- Jingyue Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, China
| | - Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
- Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, USA
| | - Xuehan Zhou
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Jing Zhang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Gangjian Jin
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Xuzhong Cong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Yongchao Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xiaoyin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Yan Liang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Huakun Zuo
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Ruixue Zhu
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Ady Stern
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
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5
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Deb S, Krause J, Faria Junior PE, Kempf MA, Schwartz R, Watanabe K, Taniguchi T, Fabian J, Korn T. Excitonic signatures of ferroelectric order in parallel-stacked MoS 2. Nat Commun 2024; 15:7595. [PMID: 39217159 PMCID: PMC11366029 DOI: 10.1038/s41467-024-52011-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Accepted: 08/22/2024] [Indexed: 09/04/2024] Open
Abstract
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS2 using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals direct correspondence between spin-valley dynamics and stacking order.
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Affiliation(s)
- Swarup Deb
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
| | - Johannes Krause
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Michael Andreas Kempf
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
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6
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Tyulnev I, Jiménez-Galán Á, Poborska J, Vamos L, Russell PSJ, Tani F, Smirnova O, Ivanov M, Silva REF, Biegert J. Valleytronics in bulk MoS 2 with a topologic optical field. Nature 2024; 628:746-751. [PMID: 38658682 DOI: 10.1038/s41586-024-07156-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 02/02/2024] [Indexed: 04/26/2024]
Abstract
The valley degree of freedom1-4 of electrons in materials promises routes towards energy-efficient information storage with enticing prospects for quantum information processing5-7. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures8,9 or specific material engineering10-13, non-resonant optical control to avoid energy dissipation and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS2, a centrosymmetric material without Berry curvature at the valleys. Our universal method utilizes spin angular momentum-shaped trefoil optical control pulses14,15 to switch the material's electronic topology and induce valley polarization by transiently breaking time and space inversion symmetry16 through a simple phase rotation. We confirm valley polarization through the transient generation of the second harmonic of a non-collinear optical probe pulse, depending on the trefoil phase rotation. The investigation shows that direct optical control over the valley degree of freedom is not limited to monolayer structures. Indeed, such control is possible for systems with an arbitrary number of layers and for bulk materials. Non-resonant valley control is universal and, at optical speeds, unlocks the possibility of engineering efficient multimaterial valleytronic devices operating on quantum coherent timescales.
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Affiliation(s)
- Igor Tyulnev
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain
| | - Álvaro Jiménez-Galán
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
- Max-Born-Institut, Berlin, Germany
| | - Julita Poborska
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain
| | - Lenard Vamos
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain
| | - Philip St J Russell
- Max-Planck Institute for Science of Light, Erlangen, Germany
- Department of Physics, Friedrich-Alexander-Universität, Erlangen, Germany
| | - Francesco Tani
- Max-Planck Institute for Science of Light, Erlangen, Germany
| | - Olga Smirnova
- Max-Born-Institut, Berlin, Germany
- Technische Universität Berlin, Berlin, Germany
- Technion - Israel Institute of Technology, Haifa, Israel
| | - Misha Ivanov
- Max-Born-Institut, Berlin, Germany
- Technion - Israel Institute of Technology, Haifa, Israel
- Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
- Department of Physics, Imperial College London, London, UK
| | - Rui E F Silva
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
| | - Jens Biegert
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain.
- ICREA, Barcelona, Spain.
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7
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Zan X, Guo X, Deng A, Huang Z, Liu L, Wu F, Yuan Y, Zhao J, Peng Y, Li L, Zhang Y, Li X, Zhu J, Dong J, Shi D, Yang W, Yang X, Shi Z, Du L, Dai Q, Zhang G. Electron/infrared-phonon coupling in ABC trilayer graphene. Nat Commun 2024; 15:1888. [PMID: 38424092 PMCID: PMC10904774 DOI: 10.1038/s41467-024-46129-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 02/12/2024] [Indexed: 03/02/2024] Open
Abstract
Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significant electron-infrared phonon coupling strength. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.
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Affiliation(s)
- Xiaozhou Zan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Aolin Deng
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240, Shanghai, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Le Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yalong Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jiaojiao Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Lu Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yangkun Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jundong Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jingwei Dong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Xiaoxia Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240, Shanghai, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
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8
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Li L, Wang Q, Wu F, Xu Q, Tian J, Huang Z, Wang Q, Zhao X, Zhang Q, Fan Q, Li X, Peng Y, Zhang Y, Ji K, Zhi A, Sun H, Zhu M, Zhu J, Lu N, Lu Y, Wang S, Bai X, Xu Y, Yang W, Li N, Shi D, Xian L, Liu K, Du L, Zhang G. Epitaxy of wafer-scale single-crystal MoS 2 monolayer via buffer layer control. Nat Commun 2024; 15:1825. [PMID: 38418816 PMCID: PMC10901795 DOI: 10.1038/s41467-024-46170-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 02/16/2024] [Indexed: 03/02/2024] Open
Abstract
Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.
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Affiliation(s)
- Lu Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qiaoling Xu
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
- College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University, Chengdu, 610068, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghe Wang
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinkai Fan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangkun Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kunshan Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Aomiao Zhi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Huacong Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jundong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Ying Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shuopei Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Na Li
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Kaihui Liu
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
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9
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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10
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Yang D, Liang J, Wu J, Xiao Y, Dadap JI, Watanabe K, Taniguchi T, Ye Z. Non-volatile electrical polarization switching via domain wall release in 3R-MoS 2 bilayer. Nat Commun 2024; 15:1389. [PMID: 38360848 PMCID: PMC10869714 DOI: 10.1038/s41467-024-45709-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 02/02/2024] [Indexed: 02/17/2024] Open
Abstract
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS2 with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Affiliation(s)
- Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.
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11
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Huang W, De-Eknamkul C, Ren Y, Cubukcu E. Directing valley-polarized emission of 3 L WS 2 by photonic crystal with directional circular dichroism. OPTICS EXPRESS 2024; 32:6076-6084. [PMID: 38439318 PMCID: PMC11018336 DOI: 10.1364/oe.510027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Revised: 01/10/2024] [Accepted: 01/19/2024] [Indexed: 03/06/2024]
Abstract
The valley degree of freedom that results from broken inversion symmetry in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) has sparked a lot of interest due to its huge potential in information processing. In this experimental work, to optically address the valley-polarized emission from three-layer (3 L) thick WS2 at room temperature, we employ a SiN photonic crystal slab that has two sets of holes in a square lattice that supports directional circular dichroism engendered by delocalized guided mode resonances. By perturbatively breaking the inversion symmetry of the photonic crystal slab, we can simultaneously manipulate s and p components of the radiating field so that these resonances correspond to circularly polarized emission. The emission of excitons from distinct valleys is coupled into different radiative channels and hence separated in the farfield. This directional exciton emission from selective valleys provides a potential route for valley-polarized light emitters, which lays the groundwork for future valleytronic devices.
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Affiliation(s)
- Wenzhuo Huang
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407, USA
| | - Chawina De-Eknamkul
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, USA
| | - Yundong Ren
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, USA
| | - Ertugrul Cubukcu
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407, USA
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, USA
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12
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Wietek E, Florian M, Göser J, Taniguchi T, Watanabe K, Högele A, Glazov MM, Steinhoff A, Chernikov A. Nonlinear and Negative Effective Diffusivity of Interlayer Excitons in Moiré-Free Heterobilayers. PHYSICAL REVIEW LETTERS 2024; 132:016202. [PMID: 38242648 DOI: 10.1103/physrevlett.132.016202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Accepted: 11/10/2023] [Indexed: 01/21/2024]
Abstract
Interlayer exciton diffusion is studied in atomically reconstructed MoSe_{2}/WSe_{2} heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly polarized photoluminescence, and g-factor measurements. Using transient microscopy we observe propagation properties of interlayer excitons that are independent from trapping at moiré- or disorder-induced local potentials. Confirmed by characteristic temperature dependence for free particles, linear diffusion coefficients of interlayer excitons at liquid helium temperature and low excitation densities are almost 1000 times higher than in previous observations. We further show that exciton-exciton repulsion and annihilation contribute nearly equally to nonlinear propagation by disentangling the two processes in the experiment and simulations. Finally, we demonstrate effective shrinking of the light emission area over time across several hundreds of picoseconds at the transition from exciton- to the plasma-dominated regimes. Supported by microscopic calculations for band gap renormalization to identify the Mott threshold, this indicates transient crossing between rapidly expanding, short-lived electron-hole plasma and slower, long-lived exciton populations.
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Affiliation(s)
- Edith Wietek
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Matthias Florian
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Jonas Göser
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alexander Högele
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 München, Germany
| | | | - Alexander Steinhoff
- Institut für Theoretische Physik, Universität Bremen, 28334 Bremen, Germany
- Bremen Center for Computational Materials Science, Universität Bremen, 28334 Bremen, Germany
| | - Alexey Chernikov
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
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13
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Zhang Y, Kamiya K, Yamamoto T, Sakano M, Yang X, Masubuchi S, Okazaki S, Shinokita K, Chen T, Aso K, Yamada-Takamura Y, Oshima Y, Watanabe K, Taniguchi T, Matsuda K, Sasagawa T, Ishizaka K, Machida T. Symmetry Engineering in Twisted Bilayer WTe 2. NANO LETTERS 2023; 23:9280-9286. [PMID: 37811843 DOI: 10.1021/acs.nanolett.3c02327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
The fabrication of artificial structures using a twisted van der Waals assembly has been a key technique for recent advancements in the research of two-dimensional (2D) materials. To date, various exotic phenomena have been observed thanks to the modified electron correlation or moiré structure controlled by the twist angle. However, the twisted van der Waals assembly has further potential to modulate the physical properties by controlling the symmetry. In this study, we fabricated twisted bilayer WTe2 and demonstrated that the twist angle successfully controls the spatial inversion symmetry and hence the spin splitting in the band structure. Our results reveal the further potential of a twisted van der Waals assembly, suggesting the feasibility of pursuing new physical phenomena in 2D materials based on the control of symmetry.
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Affiliation(s)
- Yijin Zhang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Keisuke Kamiya
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Takato Yamamoto
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Masato Sakano
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Xiaohan Yang
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
| | - Shota Okazaki
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Tongmin Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yukiko Yamada-Takamura
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Kyoto 611-0011, Japan
| | - Takao Sasagawa
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Kyoko Ishizaka
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Tomoki Machida
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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14
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Zhao Y, Zheng X, Gao P, Li H. Recent advances in defect-engineered molybdenum sulfides for catalytic applications. MATERIALS HORIZONS 2023; 10:3948-3999. [PMID: 37466487 DOI: 10.1039/d3mh00462g] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Electrochemical energy conversion and storage driven by renewable energy sources is drawing ever-increasing interest owing to the needs of sustainable development. Progress in the related electrochemical reactions relies on highly active and cost-effective catalysts to accelerate the sluggish kinetics. A substantial number of catalysts have been exploited recently, thanks to the advances in materials science and engineering. In particular, molybdenum sulfide (MoSx) furnishes a classic platform for studying catalytic mechanisms, improving catalytic performance and developing novel catalytic reactions. Herein, the recent theoretical and experimental progress of defective MoSx for catalytic applications is reviewed. This article begins with a brief description of the structure and basic catalytic applications of MoS2. The employment of defective two-dimensional and non-two-dimensional MoSx catalysts in the hydrogen evolution reaction (HER) is then reviewed, with a focus on the combination of theoretical and experimental tools for the rational design of defects and understanding of the reaction mechanisms. Afterward, the applications of defective MoSx as catalysts for the N2 reduction reaction, the CO2 reduction reaction, metal-sulfur batteries, metal-oxygen/air batteries, and the industrial hydrodesulfurization reaction are discussed, with a special emphasis on the synergy of multiple defects in achieving performance breakthroughs. Finally, the perspectives on the challenges and opportunities of defective MoSx for catalysis are presented.
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Affiliation(s)
- Yunxing Zhao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798, Singapore.
| | - Xiaolin Zheng
- Department of Mechanical Engineering, Stanford University, California 94305, USA.
| | - Pingqi Gao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
| | - Hong Li
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798, Singapore.
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 637553, Singapore
- Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
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15
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Li Y, Wan Q, Xu N. Recent Advances in Moiré Superlattice Systems by Angle-Resolved Photoemission Spectroscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305175. [PMID: 37689836 DOI: 10.1002/adma.202305175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 08/16/2023] [Indexed: 09/11/2023]
Abstract
The last decade has witnessed a flourish in 2D materials including graphene and transition metal dichalcogenides (TMDs) as atomic-scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that are effectively tuned by the moiré periodicity. Modern angle-resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus can provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, first, a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high-order moiré superlattice systems. Finally, it discusses important questions that remain open, challenges in current experimental investigations, and presents an outlook on this field of research.
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Affiliation(s)
- Yiwei Li
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Qiang Wan
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Nan Xu
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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16
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Liang J, Yang D, Xiao Y, Chen S, Dadap JI, Rottler J, Ye Z. Shear Strain-Induced Two-Dimensional Slip Avalanches in Rhombohedral MoS 2. NANO LETTERS 2023; 23:7228-7235. [PMID: 37358360 DOI: 10.1021/acs.nanolett.3c01487] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2023]
Abstract
Slip avalanches are ubiquitous phenomena occurring in three-dimensional materials under shear strain, and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in two-dimensional (2D) materials. Here we show some evidence of 2D slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest that slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for the development of new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena.
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Affiliation(s)
- Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Sean Chen
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Joerg Rottler
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada
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17
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Li M, Gao M, Zhang Q, Yang Y. Valley-dependent vortex emission from exciton-polariton in non-centrosymmetric transition metal dichalcogenide metasurfaces. OPTICS EXPRESS 2023; 31:19622-19631. [PMID: 37381373 DOI: 10.1364/oe.490067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 05/18/2023] [Indexed: 06/30/2023]
Abstract
Transition metal dichalcogenides (TMDs) have attracted great attention in valleytronics. Owing to the giant valley coherence at room temperature, valley pseudospin of TMDs open a new degree of freedom to encode and process binary information. The valley pseudospin only exists in non-centrosymmetric TMDs (e.g., monolayer or 3R-stacked multilayer), which is prohibited in conventional centrosymmetric 2H-stacked crystals. Here, we propose a general recipe to generate valley-dependent vortex beams by using a mix-dimensional TMD metasurface composed of nanostructured 2H-stacked TMD crystals and monolayer TMDs. Such an ultrathin TMD metasurface involves a momentum-space polarization vortex around bound states in the continuum (BICs), which can simultaneously achieve strong coupling (i.e., form exciton polaritons) and valley-locked vortex emission. Moreover, we report that a full 3R-stacked TMD metasurface can also reveal the strong-coupling regime with an anti-crossing pattern and a Rabi splitting of 95 meV. The Rabi splitting can be precisely controlled by geometrically shaping the TMD metasurface. Our results provide an ultra-compact TMD platform for controlling and structuring valley exciton polariton, in which the valley information is linked with the topological charge of vortex emission, which may advance valleytronic, polaritonic, and optoelectronic applications.
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18
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Sharma S, Elliott P, Shallcross S. THz induced giant spin and valley currents. SCIENCE ADVANCES 2023; 9:eadf3673. [PMID: 36921048 PMCID: PMC10017034 DOI: 10.1126/sciadv.adf3673] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 02/09/2023] [Indexed: 06/18/2023]
Abstract
Spin and valley indices represent the key quantum labels of quasi-particles in a wide class of two-dimensional materials and form the foundational elements of the fields of spintronics and valleytronics. Control over these degrees of freedom, therefore, remains the central challenge in these fields. Here, we show that femtosecond laser light combining optical frequency circularly polarized pulse and a terahertz (THz) frequency linearly polarized pulse, a so-called "hencomb" pulse, can generate precisely tailored and 90% pure spin currents for the dichalcogenide WSe2 and >75% pure valley currents for bilayer graphene with gaps greater than 120 millielectron volts (dephasing time, 20 femtoseconds). The frequency of the circular light component and the polarization vector of the THz light component are shown to represent the key control parameters of these pulses. Our results thus open a route toward light control over spin/valley current states at ultrafast times.
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19
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Guan Y, Miao L, He J, Ning J, Chen Y, Xie W, Sun J, Gopalan V, Zhu J, Wang X, Alem N, Zhang Q, Mao Z. Layered Semiconductor Cr 0.32Ga 0.68Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate. J Am Chem Soc 2023; 145:4683-4690. [PMID: 36795912 DOI: 10.1021/jacs.2c12848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/18/2023]
Abstract
The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr0.32Ga0.68Te2.33, with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.
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Affiliation(s)
- Yingdong Guan
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leixin Miao
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jingyang He
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jinliang Ning
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, United States
| | - Yangyang Chen
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Weiwei Xie
- Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, United States
| | - Jianwei Sun
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, United States
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jun Zhu
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2-Dimensional Crystal Consortium, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiaoping Wang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Qiang Zhang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zhiqiang Mao
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802, United States
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20
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Le CT, Lee JH, Kim D, Jang M, Yoon JY, Kim K, Jang JI, Seong MJ, Kim YS. Negative Valley Polarization of the Intralayer Exciton via One-Step Growth of H-Type Heterobilayer WS 2/MoS 2. ACS NANO 2023; 17:2629-2638. [PMID: 36688595 DOI: 10.1021/acsnano.2c10581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vertical type II van der Waals heterobilayers of transition metal dichalcogenides (TMDs) have attracted wide attention due to their distinctive features mostly arising from the emergence of intriguing electronic structures that include moiré-related phenomena. Owing to strong spin-orbit coupling under a noncentrosymmetric environment, TMD heterobilayers host nonequivalent +K and -K valleys of contrasting Berry curvatures, which can be optically controlled by the helicity of optical excitation. The corresponding valley selection rules are well established by not only intralayer excitons but also interlayer excitons. Quite intriguingly, here, we experimentally demonstrate that unusual valley switching can be achieved using the lowest-lying intralayer excitons in H-type heterobilayer WS2/MoS2 prepared by one-step growth. This TMD combination provides an ideal case for interlayer coupling with an almost perfect lattice match, thereby also in the momentum space between +K and -K valleys in the H-type heterostructure. The underlying valley-switching mechanism can be understood by bright-to-dark conversion of initially created electrons in the valley of WS2, followed by interlayer charge transfer to the opposite valley in MoS2. Our suggested model is also confirmed by the absence of valley switching when the lowest-lying excitons in MoS2 are directly generated in the heterobilayer. In contrast to the H-type case, we show that no valley switching is observed from R-type heterobilayers prepared by the same method, where interlayer charge transfer does not occur between the opposite valleys. We compare the case with the series of valley polarization data from other heterobilayer combinations obtained under different excitation energies and temperatures. Our valley switching mechanism can be utilized for valley manipulation by controlling the excitation photon energy together with the photon helicity in valleytronic devices derived from H-type TMD heterobilayers.
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Affiliation(s)
- Chinh Tam Le
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan44610, South Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul06794, South Korea
| | - Donggyu Kim
- Department of Physics, Sogang University, Seoul04107, South Korea
| | - Myeongjin Jang
- Department of Physics, Yonsei University, Seoul03722, South Korea
| | - Jun-Yeong Yoon
- Department of Physics, Yonsei University, Seoul03722, South Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul03722, South Korea
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul04107, South Korea
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul06794, South Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan44610, South Korea
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21
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Hori T, Kanazawa N, Hirayama M, Fujiwara K, Tsukazaki A, Ichikawa M, Kawasaki M, Tokura Y. A Noble-Metal-Free Spintronic System with Proximity-Enhanced Ferromagnetic Topological Surface State of FeSi above Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206801. [PMID: 36333884 DOI: 10.1002/adma.202206801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 10/14/2022] [Indexed: 06/16/2023]
Abstract
Strongly spin-orbit coupled states at metal interfaces, topological insulators, and 2D materials enable efficient electric control of spin states, offering great potential for spintronics. However, there are still materials challenges to overcome, including the integration into advanced silicon electronics and the scarce resources of constituent heavy elements of those materials. Through magneto-transport measurements and first-principles calculations, here robust spin-orbit coupling (SOC)-induced properties of a ferromagnetic topological surface state in FeSi and their controllability via hybridization with adjacent materials are demonstrated. In comparison to the case of its naturally oxidized surface, the ferromagnetic transition temperature is greatly increased beyond room temperature and the effective SOC strength is almost doubled at the surface in proximity to a wide-bandgap fluoride insulator. Those enhanced magnetic properties enable room-temperature magnetization switching, being applicable to spin-orbit torque based spintronic devices. Realization of strong SOC in the noble-metal-free silicon-based compound will accelerate spintronic applications.
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Affiliation(s)
- Tomohiro Hori
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Naoya Kanazawa
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Motoaki Hirayama
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Hirosawa 2-1, Wako, Saitama, 351-0198, Japan
| | - Kohei Fujiwara
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
| | - Atsushi Tsukazaki
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
| | - Masakazu Ichikawa
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Masashi Kawasaki
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Hirosawa 2-1, Wako, Saitama, 351-0198, Japan
| | - Yoshinori Tokura
- Department of Applied Physics, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Hirosawa 2-1, Wako, Saitama, 351-0198, Japan
- Tokyo College, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, 113-8656, Japan
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22
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Dong Y, Yang MM, Yoshii M, Matsuoka S, Kitamura S, Hasegawa T, Ogawa N, Morimoto T, Ideue T, Iwasa Y. Giant bulk piezophotovoltaic effect in 3R-MoS 2. NATURE NANOTECHNOLOGY 2023; 18:36-41. [PMID: 36411374 DOI: 10.1038/s41565-022-01252-8] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade1-14. Initially discovered and developed in ferroelectric oxide materials2, the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals9,10, van der Waals nanomaterials11,12,14, oxide superlattices15, halide perovskites16, organics17, bulk Rashba semiconductors18 and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS2 multilayer flakes (that is, 3R-MoS2). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS2 lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.
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Affiliation(s)
- Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Ming-Min Yang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Physics, The University of Warwick, Coventry, UK
| | - Mao Yoshii
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Satoshi Matsuoka
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Graduate School of Engineering, Nagasaki University, Nagasaki, Japan
| | - Sota Kitamura
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Tatsuo Hasegawa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Takahiro Morimoto
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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23
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Chen W, Gu M, Li J, Wang P, Liu Q. Role of Hidden Spin Polarization in Nonreciprocal Transport of Antiferromagnets. PHYSICAL REVIEW LETTERS 2022; 129:276601. [PMID: 36638296 DOI: 10.1103/physrevlett.129.276601] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Revised: 08/04/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
The discovery of hidden spin polarization (HSP) in centrosymmetric nonmagnetic crystals, i.e., spatially distributed spin polarization originated from local symmetry breaking, has promised an expanded material pool for future spintronics. However, the measurements of such exotic effects have been limited to subtle space- and momentum-resolved techniques, unfortunately, hindering their applications. Here, we theoretically predict macroscopic non-reciprocal transports induced by HSP when coupling another spatially distributed quantity, such as staggered local moments in a space-time PT-symmetric antiferromagnet. By using a four-band model Hamiltonian, we demonstrate that HSP plays a crucial role in determining the asymmetric bands with respect to opposite momenta. Such band asymmetry leads to non-reciprocal nonlinear conductivity, exemplified by tetragonal CuMnAs via first-principles calculations. We further provide the material design principles for large nonlinear conductivity, including two-dimensional nature, multiple band crossings near the Fermi level, and symmetry protected HSP. Our Letter not only reveals direct spintronic applications of HSP (such as Néel order detection), but also sheds light on finding observables of other hidden effects, such as hidden optical polarization and hidden Berry curvature.
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Affiliation(s)
- Weizhao Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingqiang Gu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiayu Li
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Panshuo Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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24
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Rajarapu R, Barman PK, Yadav R, Biswas R, Devaraj M, Poudyal S, Biswal B, Laxmi V, Pradhan GK, Raghunathan V, Nayak PK, Misra A. Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R-Phase Sword-like MoS 2: A Versatile Optoelectronic Material. ACS NANO 2022; 16:21366-21376. [PMID: 36468945 DOI: 10.1021/acsnano.2c09673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Synthesizing a material with the desired polymorphic phase in a chemical vapor deposition (CVD) process requires a delicate balance among various thermodynamic variables. Here, we present a methodology to synthesize rhombohedral (3R)-phase MoS2 in a well-defined sword-like geometry having lengths up to 120 μm, uniform width of 2-3 μm and thickness of 3-7 nm by controlling the carrier gas flow dynamics from continuous mode to pulsed mode during the CVD growth process. Characteristic signatures such as high degree of circular dichroism (∼58% at 100 K), distinct evolution of low-frequency Raman peaks and increasing intensity of second harmonic signals with increasing number of layers conclusively establish the 3R-phase of the material. A high value (∼844 pm/V) of second-order susceptibility for few-layer-thick MoS2 swords signifies the potential of MoS2 to serve as an atomically thin nonlinear medium. A field effect mobility of 40 cm2/V-s and Ion/Ioff ratio of ∼106 further confirm the electronic-grade standard of this 3R-phase MoS2. These findings are significant for the development of emerging quantum electronic devices utilizing valley-based physics and nonlinear optical phenomena in layered materials.
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Affiliation(s)
- Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Rabindra Biswas
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Manikandan Devaraj
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Vijay Laxmi
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha-751024, India
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
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25
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Sutter E, Komsa HP, Puretzky AA, Unocic RR, Sutter P. Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires. ACS NANO 2022; 16:21199-21207. [PMID: 36413759 DOI: 10.1021/acsnano.2c09172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe1-xSx) alloys, obtained by vapor-liquid-solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe1-xSx alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hannu-Pekka Komsa
- Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014, Oulu, Finland
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
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26
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Cho S, Huh S, Fang Y, Hua C, Bai H, Jiang Z, Liu Z, Liu J, Chen Z, Fukushima Y, Harasawa A, Kawaguchi K, Shin S, Kondo T, Lu Y, Mu G, Huang F, Shen D. Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS 2. NANO LETTERS 2022; 22:8827-8834. [PMID: 36367457 DOI: 10.1021/acs.nanolett.2c02372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e2/h. Recently, 2M-WS2, a new stable phase of transition metal dichalcogenides with a 2M structure showing a layer configuration identical to that of the monolayer 1T' TMDs, was suggested to be a QSH insulator as well as a superconductor with a critical transition temperature of around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS2. The TSS exhibit characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z2 topological states therein. We expect that 2M-WS2 with coexisting superconductivity and TSS might host the promising Majorana bound states.
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Affiliation(s)
- Soohyun Cho
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Soonsang Huh
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai200050, People's Republic of China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing100871, People's Republic of China
| | - Chenqiang Hua
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Hua Bai
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Zhicheng Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
| | - Zhengtai Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Jishan Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Zhenhua Chen
- Shanghai Synchrotron Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, People's Republic of China
| | - Yuto Fukushima
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Ayumi Harasawa
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Kaishu Kawaguchi
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Shik Shin
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Takeshi Kondo
- Trans-Scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo113-0033, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai200050, People's Republic of China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing100871, People's Republic of China
| | - Dawei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
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27
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Gao Y, Wang S, Wang B, Jiang Z, Fang T. Recent Progress in Phase Regulation, Functionalization, and Biosensing Applications of Polyphase MoS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202956. [PMID: 35908166 DOI: 10.1002/smll.202202956] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 06/28/2022] [Indexed: 06/15/2023]
Abstract
The disulfide compounds of molybdenum (MoS2 ) are layered van der Waals materials that exhibit a rich array of polymorphic structures. MoS2 can be roughly divided into semiconductive phase and metallic phase according to the difference in electron filling state of the 4d orbital of Mo atom. The two phases show completely different properties, leading to their diverse applications in biosensors. But to some extent, they compensate for each other. This review first introduces the relationship between phase state and the chemical/physical structures and properties of MoS2 . Furthermore, the synthetic methods are summarized and the preparation strategies for metastable phases are highlighted. In addition, examples of electronic and chemical property designs of MoS2 by means of doping and surface modification are outlined. Finally, studies on biosensors based on MoS2 in recent years are presented and classified, and the roles of MoS2 with different phases are highlighted. This review offers references for the selection of materials to construct different types of biosensors based on MoS2 , and provides inspiration for sensing performance enhancement.
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Affiliation(s)
- Yan Gao
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Siyao Wang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Bin Wang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Zhao Jiang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Tao Fang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
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28
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Giant bipolar unidirectional photomagnetoresistance. Proc Natl Acad Sci U S A 2022; 119:e2115939119. [PMID: 35763578 PMCID: PMC9271161 DOI: 10.1073/pnas.2115939119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Abstract
Positive magnetoresistance (PMR) and negative magnetoresistance (NMR) describe two opposite responses of resistance induced by a magnetic field. Materials with giant PMR are usually distinct from those with giant NMR due to different physical natures. Here, we report the unusual photomagnetoresistance in the van der Waals heterojunctions of WSe2/quasi-two-dimensional electron gas, showing the coexistence of giant PMR and giant NMR. The PMR and NMR reach 1,007.5% at -9 T and -93.5% at 2.2 T in a single device, respectively. The magnetoresistance spans over two orders of magnitude on inversion of field direction, implying a giant unidirectional magnetoresistance (UMR). By adjusting the thickness of the WSe2 layer, we achieve the maxima of PMR and NMR, which are 4,900,000% and -99.8%, respectively. The unique magnetooptical transport shows the unity of giant UMR, PMR, and NMR, referred to as giant bipolar unidirectional photomagnetoresistance. These features originate from strong out-of-plane spin splitting, magnetic field-enhanced recombination of photocarriers, and the Zeeman effect through our experimental and theoretical investigations. This work offers directions for high-performance light-tunable spintronic devices.NMR).
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29
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Saminathan R, Hadidi H, Tharwan M, Alnujaie A, Khamaj JA, Venugopal G. Raman Spectroscopy-Assisted Characterization of Nanoform MoS 2 Thin Film Transistor. SCANNING 2022; 2022:3255615. [PMID: 35844264 PMCID: PMC9242743 DOI: 10.1155/2022/3255615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Revised: 05/22/2022] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
In this paper, we report the simple preparation and investigation of electrical transport properties of nanoform MoS2 thin film transistor (TFT) devices. MoS2 nanoparticles were synthesized by using the hydrothermal method. The physiochemical characterizations such as UV-vis, Fourier transform infrared, X-ray diffraction, and Raman spectroscopy studies were performed. Spin-coating was used to make the thin film on which silver electrodes were made. We observed nonlinear current-voltage (I-V) characteristics; however, the symmetricity was found in the I-V curve which confirms the no formation of the Schottky barrier between thin film and electrodes. Transistor transfer characteristics reveal that the TFT device is n-doped as more drain current modulation is observed when the positive gate voltage is applied. The relationship between gate-current and gate voltage studies concludes that there is no leakage gate current in the TFT device which further confirms the good reliability of transfer characteristics of a device. The device mobility was calculated as ~10.2 cm2/Vs, and the same was explained with plausible reason supported with Raman spectra analysis.
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Affiliation(s)
- Rajasekaran Saminathan
- Mechanical Engineering Department, Faculty of Engineering, Jazan University, P. O. Box 45142, Jazan, Saudi Arabia
| | - Haitham Hadidi
- Mechanical Engineering Department, Faculty of Engineering, Jazan University, P. O. Box 45142, Jazan, Saudi Arabia
| | - Mohammed Tharwan
- Mechanical Engineering Department, Faculty of Engineering, Jazan University, P. O. Box 45142, Jazan, Saudi Arabia
| | - Ali Alnujaie
- Mechanical Engineering Department, Faculty of Engineering, Jazan University, P. O. Box 45142, Jazan, Saudi Arabia
| | - Jabril A. Khamaj
- Mechanical Engineering Department, Faculty of Engineering, Jazan University, P. O. Box 45142, Jazan, Saudi Arabia
| | - Gunasekaran Venugopal
- Department of Materials Science, School of Technology, Central University of Tamil Nadu, Thiruvarur, 610005 Tamil Nadu, India
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30
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Maduro L, van Heijst SE, Conesa-Boj S. First-Principles Calculation of Optoelectronic Properties in 2D Materials: The Polytypic WS 2 Case. ACS PHYSICAL CHEMISTRY AU 2022; 2:191-198. [PMID: 35637785 PMCID: PMC9136949 DOI: 10.1021/acsphyschemau.1c00038] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/27/2021] [Revised: 12/19/2021] [Accepted: 12/22/2021] [Indexed: 11/29/2022]
Abstract
![]()
The phenomenon of
polytypism, namely unconventional crystal phases
displaying a mixture of stacking sequences, represents a powerful
handle to design and engineer novel physical properties in two-dimensional
(2D) materials. In this work, we characterize from first-principles
the optoelectronic properties associated with the 2H/3R polytypism
occurring in WS2 nanomaterials by means of density functional
theory (DFT) calculations. We evaluate the band gap, optical response,
and energy-loss function associated with 2H/3R WS2 nanomaterials
and compare our predictions with experimental measurements of electron
energy-loss spectroscopy (EELS) carried out in nanostructures exhibiting
the same polytypism. Our results provide further input to the ongoing
efforts toward the integration of polytypic 2D materials into functional
devices.
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Affiliation(s)
- Louis Maduro
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2628CJ, The Netherlands
| | - Sabrya E. van Heijst
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2628CJ, The Netherlands
| | - Sonia Conesa-Boj
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2628CJ, The Netherlands
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31
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Wang X, Yasuda K, Zhang Y, Liu S, Watanabe K, Taniguchi T, Hone J, Fu L, Jarillo-Herrero P. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. NATURE NANOTECHNOLOGY 2022; 17:367-371. [PMID: 35039684 DOI: 10.1038/s41565-021-01059-z] [Citation(s) in RCA: 118] [Impact Index Per Article: 59.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Accepted: 11/22/2021] [Indexed: 05/27/2023]
Abstract
van der Waals materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit physical properties absent in the parent compounds through interlayer interactions1. Here we report on a new family of nanometre-thick, two-dimensional (2D) ferroelectric semiconductors, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2 and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly parallel-stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric field-induced domain wall motion with piezoelectric force microscopy. Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The new semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties2-5.
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Affiliation(s)
- Xirui Wang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Yasuda
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
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32
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Demirkol Ö, Sevik C, Demiroğlu İ. First principles assessment of the phase stability and transition mechanisms of designated crystal structures of pristine and Janus transition metal dichalcogenides. Phys Chem Chem Phys 2022; 24:7430-7441. [PMID: 35266937 DOI: 10.1039/d1cp05642e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Abstract
Two-dimensional Transition Metal Dichalcogenides (TMDs) possessing extraordinary physical properties at reduced dimensionality have attracted interest due to their promise in electronic and optical device applications. However, TMD monolayers can show a broad range of different properties depending on their crystal phase; for example, H phases are usually semiconductors, while the T phases are metallic. Thus, controlling phase transitions has become critical for device applications. In this study, the energetically low-lying crystal structures of pristine and Janus TMDs are investigated by using ab initio Nudged Elastic Band and molecular dynamics simulations to provide a general explanation for their phase stability and transition properties. Across all materials investigated, the T phase is found to be the least stable and the H phase is the most stable except for WTe2, while the T' and T'' phases change places according to the TMD material. The transition energy barriers are found to be large enough to hint that even the higher energy phases are unlikely to undergo a phase transition to a more stable phase if they can be achieved except for the least stable T phase, which has zero barrier towards the T' phase. Indeed, in molecular dynamics simulations the thermodynamically least stable T phase transformed into the T' phase spontaneously while in general no other phase transition was observed up to 2100 K for the other three phases. Thus, the examined T', T'' and H phases were shown to be mostly stable and do not readily transform into another phase. Furthermore, so-called mixed phase calculations considered in our study explain the experimentally observed lateral hybrid structures and point out that the coexistence of different phases is strongly stable against phase transitions. Indeed, stable complex structures such as metal-semiconductor-metal architectures, which have immense potential to be used in future device applications, are also possible based on our investigation.
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Affiliation(s)
- Öznur Demirkol
- Department of Physics, Eskişehir Technical University, Eskişehir, TR 26470, Turkey
| | - Cem Sevik
- Department of Mechanical Engineering, Eskişehir Technical University, Eskisehir, TR 26555, Turkey.,Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
| | - İlker Demiroğlu
- Department of Advanced Technologies, Eskişehir Technical University, Eskisehir, TR 26555, Turkey.
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33
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 39] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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34
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Yang X, Bao JK, Lou Z, Li P, Jiang C, Wang J, Sun T, Liu Y, Guo W, Ramakrishnan S, Kotla SR, Tolkiehn M, Paulmann C, Cao GH, Nie Y, Li W, Liu Y, van Smaalen S, Lin X, Xu ZA. Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108550. [PMID: 34871466 DOI: 10.1002/adma.202108550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Revised: 11/14/2021] [Indexed: 06/13/2023]
Abstract
Intercalation and stacking-order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein, the growth of Pb-intercalated TMDCs-Pb(Ta1+x Se2 )2 , the first 124-phase, is reported. Pb(Ta1+x Se2 )2 exhibits a unique two-step first-order structural phase transition at around 230 K. The transitions are solely associated with the stacking degree of freedom, evolving from a high-temperature (high-T) phase with ABC stacking and R3m symmetry to an intermediate phase with AB stacking and P3m1, and finally to a low-temperature (low-T) phase again with R3msymmetry, but with ACB stacking. Each step involves a rigid slide of building blocks by a vector [1/3, 2/3, 0]. Intriguingly, gigantic lattice contractions occur at the transitions on warming. At low-T, bulk superconductivity with Tc ≈ 1.8 K is observed. The underlying physics of the structural phase transitions are discussed from first-principle calculations. The symmetry analysis reveals topological nodal lines in the band structure. The results demonstrate the possibility of realizing higher-order metal-intercalated phases of TMDCs and advance the knowledge of polymorphic transitions, and may inspire stacking-order engineering in TMDCs and beyond.
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Affiliation(s)
- Xiaohui Yang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Jin-Ke Bao
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
- Department of Physics, Materials Genome Institute and International Center for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, P. R. China
| | - Zhefeng Lou
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Peng Li
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Center for Correlated Matter, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Chenxi Jiang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jialu Wang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Tulai Sun
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, P. R. China
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yabin Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Wei Guo
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Sitaram Ramakrishnan
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
- Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan
| | - Surya Rohith Kotla
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
| | | | - Carsten Paulmann
- Mineralogisch-Petrographisches Institute, Universität Hamburg, 20146, Hamburg, Germany
| | - Guang-Han Cao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang Province, 310024, P. R. China
| | - Yang Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Center for Correlated Matter, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Sander van Smaalen
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
| | - Xiao Lin
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
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35
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Ullah F, Lee JH, Tahir Z, Samad A, Le CT, Kim J, Kim D, Rashid MU, Lee S, Kim K, Cheong H, Jang JI, Seong MJ, Kim YS. Selective Growth and Robust Valley Polarization of Bilayer 3 R-MoS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57588-57596. [PMID: 34797625 DOI: 10.1021/acsami.1c16889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Noncentrosymmetric transition-metal dichalcogenides, particularly their 3R polymorphs, provide a robust setting for valleytronics. Here, we report on the selective growth of monolayers and bilayers of MoS2, which were acquired from two closely but differently oriented substrates in a chemical vapor deposition reactor. It turns out that as-grown bilayers are predominantly 3R-type, not more common 2H-type, as verified by microscopic and spectroscopic characterization. As expected, the 3R bilayer showed a significantly higher valley polarization compared with the centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K' points in momentum space. Interestingly, the 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, the 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from ∼0.16 kW/cm2 to ∼0.16 MW/cm2 at both low and room temperatures. These observations are rather surprising because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in the monolayer. The improved valley polarization of the 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS2 bilayers that could be utilized as a platform for advancing valleytronics.
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Affiliation(s)
- Farman Ullah
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul 06974, South Korea
| | - Zeeshan Tahir
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Abdus Samad
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Chinh Tam Le
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Jungcheol Kim
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Donggyu Kim
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Mamoon Ur Rashid
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, South Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, South Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul 06974, South Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
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36
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Abstract
The energy from fossil fuels has been recognized as a main factor of global warming and environmental pollution. Therefore, there is an urgent need to replace fossil fuels with clean, cost-effective, long-lasting, and environmentally friendly fuel to solve the future energy crisis of the world. Therefore, the development of clean, sustainable, and renewable energy sources is a prime concern. In this regard, solar energy-driven hydrogen production is considered as an overriding opening for renewable and green energy by virtue of its high energy efficiency, high energy density, and non-toxicity along with zero emissions. Water splitting is a promising technology for producing hydrogen, which represents a potentially and environmentally clean fuel. Water splitting is a widely known process for hydrogen production using different techniques and materials. Among different techniques of water splitting, electrocatalytic and photocatalytic water splitting using semiconductor materials have been considered as the most scalable and cost-effective approaches for the commercial production of sustainable hydrogen. In order to achieve a high yield of hydrogen from these processes, obtaining a suitable, efficient, and stable catalyst is a significant factor. Among the different types of semiconductor catalysts, tungsten disulfide (WS2) has been widely utilized as a catalytic active material for the water-splitting process, owing to its layered 2D structure and its interesting chemical, physical, and structural properties. However, WS2 suffers from some disadvantages that limit its performance in catalytic water splitting. Among the various techniques and strategies that have been constructed to overcome the limitations of WS2 is heterostructure construction. In this process, WS2 is coupled with another semiconducting material in order to facilitate the charge transfer and prevent the charge recombination, which will enhance the catalytic performance. This review aims to summarize the recent studies and findings on WS2 and its heterostructures as a catalyst in the electrocatalytic and photocatalytic water-splitting processes.
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37
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Zhang K, Zhao S, Hao Z, Kumar S, Schwier EF, Zhang Y, Sun H, Wang Y, Hao Y, Ma X, Liu C, Wang L, Wang X, Miyamoto K, Okuda T, Liu C, Mei J, Shimada K, Chen C, Liu Q. Observation of Spin-Momentum-Layer Locking in a Centrosymmetric Crystal. PHYSICAL REVIEW LETTERS 2021; 127:126402. [PMID: 34597091 DOI: 10.1103/physrevlett.127.126402] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Accepted: 07/30/2021] [Indexed: 06/13/2023]
Abstract
The spin polarization in nonmagnetic materials is conventionally attributed to the outcome of spin-orbit coupling when the global inversion symmetry is broken. The recently discovered hidden spin polarization indicates that a specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift in research on centrosymmetric crystals for potential spintronic applications. Here, combining spin- and angle-resolved photoemission spectroscopy and theoretical calculations, we report distinct spin-momentum-layer locking phenomena in a centrosymmetric, layered material, BiOI. The measured spin is highly polarized along the Brillouin zone boundary, while the same effect almost vanishes around the zone center due to its nonsymmorphic crystal structure. Our work demonstrates the existence of momentum-dependent hidden spin polarization and uncovers the microscopic mechanism of spin, momentum, and layer locking to each other, thus shedding light on the design metrics for future spintronic materials.
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Affiliation(s)
- Ke Zhang
- Department of Physical Science, Graduate School of Science, Hiroshima University, Hiroshima 739-0046, Japan
| | - Shixuan Zhao
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhanyang Hao
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shiv Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Eike F Schwier
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
- Experimentelle Physik VII, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Germany
| | - Yingjie Zhang
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hongyi Sun
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuan Wang
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yujie Hao
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiaoming Ma
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Le Wang
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiaoxiao Wang
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Koji Miyamoto
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Taichi Okuda
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Chang Liu
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiawei Mei
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kenya Shimada
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Chaoyu Chen
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory for Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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38
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Saito H, Yoshimoto D, Moritake Y, Matsukata T, Yamamoto N, Sannomiya T. Valley-Polarized Plasmonic Edge Mode Visualized in the Near-Infrared Spectral Range. NANO LETTERS 2021; 21:6556-6562. [PMID: 34314178 DOI: 10.1021/acs.nanolett.1c01841] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Valley polarization has recently been adopted in optics, offering robust waveguiding and angular momentum sorting. The success of valley systems in photonic crystals suggests a plasmonic counterpart that can merge topological photonics and topological condensed matter systems, for instance, two-dimensional materials with the enhanced light-matter interaction. However, a valley plasmonic waveguide with a sufficient propagation distance in the near-infrared (NIR) or visible spectral range has so far not been realized due to ohmic loss inside the metal. Here, we employ gap surface plasmons for high index contrasting and realize a wide-bandgap valley plasmonic crystal, allowing waveguiding in the NIR-visible range. The edge mode with a propagation distance of 5.3 μm in the range of 1.31-1.36 eV is experimentally confirmed by visualizing the field distributions with a scanning transmission electron microscope cathodoluminescence technique, suggesting a practical platform for transferring angular momentum between photons and carriers in mesoscopic active devices.
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Affiliation(s)
- Hikaru Saito
- Department of Advanced Materials Science and Engineering, Kyushu University, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580, Japan
- Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580, Japan
| | - Daichi Yoshimoto
- Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580, Japan
| | - Yuto Moritake
- Department of Physics, Tokyo Institute of Technology, Oookayama, Meguro, Tokyo 152-8550, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
| | - Taeko Matsukata
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
| | - Naoki Yamamoto
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
| | - Takumi Sannomiya
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
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39
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Saito R, Ukhtary MS, Wang S, Hung NT. Selection rule for Raman spectra of two-dimensional materials using circularly-polarized vortex light. Phys Chem Chem Phys 2021; 23:17271-17278. [PMID: 34355711 DOI: 10.1039/d1cp02209a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Conservation of spin and orbital angular momenta of circularly-polarized vortex light is discussed for Raman spectra of two-dimensional materials. We first show the selection rule for optical absorption of two-dimensional materials as a function of the spin and orbital angular momentum of incident vortex light. In the case of two-dimensional materials, the Raman tensor for the incident vortex light does not change the symmetry of the phonon mode. Furthermore, the Raman active modes are classified by either "helicity-changing" or "helicity-conserved" Raman modes, in which the scattered photon of circularly polarized light either changes or does not change the helicity of the light, respectively. We show tables of selection rules for the Raman active modes of two-dimensional materials with 2, 3, 4, and 6 rotational symmetry for vortex light.
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Affiliation(s)
- Riichiro Saito
- Department of Physics, Tohoku University, Sendai 980-8578, Japan.
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40
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Zhang X, Zhou J, Li SQ, Wang Y, Zhang S, Liu Y, Gao J, Zhao J, Wang W, Yu R, Zhang W, Liu N, Nie J, He L, Dou R. Enhanced Valley Polarization of Bilayer MoSe 2 with Variable Stacking Order and Interlayer Coupling. J Phys Chem Lett 2021; 12:5879-5888. [PMID: 34143633 DOI: 10.1021/acs.jpclett.1c01578] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In two-dimensional transitional metal dichalcogenides, tuning the spin-valley-layer coupling via changing layer numbers and stacking orders remains desirable for their application in valleytronics. Herein, six-point star-like MoSe2 nanoflakes simultaneously containing different atom registration regions from monolayer to bilayer with 2H and 3R stacking order were fabricated, and the valley polarizations were comparably investigated by circular polarized photoluminescent spectroscopy. The degree of valley polarization was detected to be about 12.5% in the monolayer and 10% in the 2H bilayer, but greatly upgraded to about 40% in the 3R bilayer MoSe2. This enhancement was attributed to the multiband spin splitting and generation of spin-dependent layer polarization for the 3R MoSe2 bilayer, which is well evidenced by our ab initio calculations of the energy band structures. Our results demonstrate that preparing TMD crystals with controllable stacking orders and interlayer coupling is a promising route to tune the valley index in TMDs for developing valleytronics technology.
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Affiliation(s)
- Xingli Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Jun Zhou
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Shi-Qi Li
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, P. R. China
| | - Yuanye Wang
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Shiping Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Yalin Liu
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Junfeng Gao
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, P. R. China
| | - Jijun Zhao
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, P. R. China
| | - Weipeng Wang
- Beijing National Laboratory for Condensed Mater Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Richeng Yu
- Beijing National Laboratory for Condensed Mater Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Jiacai Nie
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Ruifen Dou
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
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41
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Liu JY, Yu J, Ning JL, Yi HM, Miao L, Min LJ, Zhao YF, Ning W, Lopez KA, Zhu YL, Pillsbury T, Zhang YB, Wang Y, Hu J, Cao HB, Chakoumakos BC, Balakirev F, Weickert F, Jaime M, Lai Y, Yang K, Sun JW, Alem N, Gopalan V, Chang CZ, Samarth N, Liu CX, McDonald RD, Mao ZQ. Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb 2. Nat Commun 2021; 12:4062. [PMID: 34210963 PMCID: PMC8249485 DOI: 10.1038/s41467-021-24369-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Accepted: 06/16/2021] [Indexed: 02/06/2023] Open
Abstract
Spin-valley locking in monolayer transition metal dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a Dirac semimetal BaMnSb2. This is revealed by comprehensive studies using first principles calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy measurements. Moreover, this material also exhibits a stacked quantum Hall effect (QHE). The spin-valley degeneracy extracted from the QHE is close to 2. This result, together with the Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we also observed a plateau in the z-axis resistance, suggestive of a two-dimensional chiral surface state present in the quantum Hall state. These findings establish BaMnSb2 as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
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Affiliation(s)
- J Y Liu
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, USA
| | - J Yu
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
- Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, MD, USA
| | - J L Ning
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, USA
| | - H M Yi
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - L Miao
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - L J Min
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Y F Zhao
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - W Ning
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - K A Lopez
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Y L Zhu
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - T Pillsbury
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - Y B Zhang
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, USA
| | - Y Wang
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - J Hu
- Department of Physics, University of Arkansas, Fayetteville, AR, USA
| | - H B Cao
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - B C Chakoumakos
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - F Balakirev
- Los Alamos National Laboratory, Los Alamos, NM, USA
| | - F Weickert
- Los Alamos National Laboratory, Los Alamos, NM, USA
| | - M Jaime
- Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Y Lai
- Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Kun Yang
- Physics Department and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, USA
| | - J W Sun
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, USA
| | - N Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - V Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - C Z Chang
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - N Samarth
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - C X Liu
- Department of Physics, The Pennsylvania State University, University Park, PA, USA.
| | - R D McDonald
- Los Alamos National Laboratory, Los Alamos, NM, USA.
| | - Z Q Mao
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, USA.
- Department of Physics, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
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42
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 71] [Impact Index Per Article: 23.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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43
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Li Y, Wang M, Yi Y, Lu C, Dou S, Sun J. Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005573. [PMID: 33734605 DOI: 10.1002/smll.202005573] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/21/2020] [Indexed: 06/12/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.
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Affiliation(s)
- Yihui Li
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Menglei Wang
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Yuyang Yi
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Chen Lu
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Shixue Dou
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
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44
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Zhao X, Qiao J, Chan SM, Li J, Dan J, Ning S, Zhou W, Quek SY, Pennycook SJ, Loh KP. Unveiling Atomic-Scale Moiré Features and Atomic Reconstructions in High-Angle Commensurately Twisted Transition Metal Dichalcogenide Homobilayers. NANO LETTERS 2021; 21:3262-3270. [PMID: 33749268 DOI: 10.1021/acs.nanolett.1c00563] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Twisting the angle between van der Waals stacked 2D layers has recently sparked great interest as a new strategy to tune the physical properties of the materials. The twist angle and associated strain profiles govern the electrical and optical properties of the twisted 2D materials, but their detailed atomic structures remain elusive. Herein, using combined atomic-resolution electron microscopy and density functional theory (DFT) calculations, we identified five unique types of moiré features in commensurately twisted 7a×7a transition metal dichalcogenide (TMD) bilayers. These stacking variants are distinguishable only when the moiré wavelength is short. Periodic lattice strain is observed in various commensurately twisted TMD bilayers. Assisted by Zernike polynomial as a hierarchical active-learning framework, a hexagon-shaped strain soliton network has been atomically unveiled in nearly commensurate twisted TMD bilayers. Unlike stacking-polytype-dependent properties in untwisted structures, the stacking variants have the same electronic structures that suggest twisted bilayer systems are invariant against interlayer gliding.
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Affiliation(s)
- Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
| | - Jingsi Qiao
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Si Min Chan
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Jing Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
| | - Jiadong Dan
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Su Ying Quek
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Stephen John Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3 117543, Singapore
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45
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Matsuoka H, Barnes SE, Ieda J, Maekawa S, Bahramy MS, Saika BK, Takeda Y, Wadati H, Wang Y, Yoshida S, Ishizaka K, Iwasa Y, Nakano M. Spin-Orbit-Induced Ising Ferromagnetism at a van der Waals Interface. NANO LETTERS 2021; 21:1807-1814. [PMID: 33538606 DOI: 10.1021/acs.nanolett.0c04851] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Magnetocrystalline anisotropy, a key ingredient for establishing long-range order in a magnetic material down to the two-dimensional (2D) limit, is generally associated with spin-orbit interaction (SOI) involving a finite orbital angular momentum. Here we report strong out-of-plane magnetic anisotropy without orbital angular momentum, emerging at the interface between two different van der Waals (vdW) materials, an archetypal metallic vdW material NbSe2 possessing Zeeman-type SOI and an isotropic vdW ferromagnet V5Se8. We found that the Zeeman SOI in NbSe2 induces robust out-of-plane magnetic anisotropy in V5Se8 down to the 2D limit with a more than 2-fold enhancement of the transition temperature. We propose a simple model that takes into account the energy gain in NbSe2 in contact with a ferromagnet, which naturally explains our observations. Our results demonstrate a conceptually new magnetic proximity effect at the vdW interface, expanding the horizons of emergent phenomena achievable in vdW heterostructures.
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Affiliation(s)
- Hideki Matsuoka
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
| | | | - Jun'ichi Ieda
- Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki 319-1195, Japan
| | - Sadamichi Maekawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Kavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 100190, China
| | - Mohammad Saeed Bahramy
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
| | - Bruno Kenichi Saika
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
| | - Yukiharu Takeda
- Materials Sciences Research Center, Japan Atomic Energy Agency, Hyogo 679-5148, Japan
| | - Hiroki Wadati
- Graduate School of Material Science, University of Hyogo, Hyogo 678-1297, Japan
| | - Yue Wang
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
| | - Satoshi Yoshida
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
| | - Kyoko Ishizaka
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Masaki Nakano
- Quantum-Phase Electronics Center and Department of Applied Physics, the University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
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Chu J, Wang Y, Wang X, Hu K, Rao G, Gong C, Wu C, Hong H, Wang X, Liu K, Gao C, Xiong J. 2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004469. [PMID: 33325574 DOI: 10.1002/adma.202004469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Revised: 07/21/2020] [Indexed: 06/12/2023]
Abstract
The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.
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Affiliation(s)
- Junwei Chu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xuepeng Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kai Hu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chunchun Wu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Chunlei Gao
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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48
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Sam RT, Umakoshi T, Verma P. Probing stacking configurations in a few layered MoS 2 by low frequency Raman spectroscopy. Sci Rep 2020; 10:21227. [PMID: 33277575 PMCID: PMC7718217 DOI: 10.1038/s41598-020-78238-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2020] [Accepted: 11/18/2020] [Indexed: 11/11/2022] Open
Abstract
Novel two-dimensional (2D) layered materials, such as MoS2, have recently gained a significant traction, chiefly due to their tunable electronic and optical properties. A major attribute that affects the tunability is the number of layers in the system. Another important, but often overlooked aspect is the stacking configuration between the layers, which can modify their electro-optic properties through changes in internal symmetries and interlayer interactions. This demands a thorough understanding of interlayer stacking configurations of these materials before they can be used in devices. Here, we investigate the spatial distribution of various stacking configurations and variations in interlayer interactions in few-layered MoS2 flakes probed through the low-frequency Raman spectroscopy, which we establish as a versatile imaging tool for this purpose. Some interesting anomalies in MoS2 layer stacking, which we propose to be caused by defects, wrinkles or twist between the layers, are also reported here. These types of anomalies, which can severely affect the properties of these materials can be detected through low-frequency Raman imaging. Our findings provide useful insights for understanding various structure-dependent properties of 2D materials that could be of great importance for the development of future electro-optic devices, quantum devices and energy harvesting systems.
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Affiliation(s)
- Rhea Thankam Sam
- Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan
| | - Takayuki Umakoshi
- Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan.,PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan
| | - Prabhat Verma
- Department of Applied Physics, Osaka University, Suita, Osaka, 565-0871, Japan.
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49
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Kobayashi T, Nakata Y, Yaji K, Shishidou T, Agterberg D, Yoshizawa S, Komori F, Shin S, Weinert M, Uchihashi T, Sakamoto K. Orbital Angular Momentum Induced Spin Polarization of 2D Metallic Bands. PHYSICAL REVIEW LETTERS 2020; 125:176401. [PMID: 33156655 DOI: 10.1103/physrevlett.125.176401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Revised: 08/12/2020] [Accepted: 09/23/2020] [Indexed: 06/11/2023]
Abstract
The electrons in 2D systems with broken inversion symmetry are spin-polarized due to spin-orbit coupling and provide perfect targets for observing exotic spin-related fundamental phenomena. We observe a Fermi surface with a novel spin texture in the 2D metallic system formed by indium double layers on Si(111) and find that the primary origin of the spin-polarized electronic states of this system is the orbital angular momentum and not the so-called Rashba effect. The present results deepen the understanding of the physics arising from spin-orbit coupling in atomic-layered materials with consequences for spintronic devices and the physics of the superconducting state.
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Affiliation(s)
- Takahiro Kobayashi
- Department of Material and Life Science, Osaka University, Osaka 565-0871, Japan
| | - Yoshitaka Nakata
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Koichiro Yaji
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Ibaraki 305-0047, Japan
| | - Tatsuya Shishidou
- Department of Physics, University of Wisconsin-Milwaukee, Wisconsin 53201, USA
| | - Daniel Agterberg
- Department of Physics, University of Wisconsin-Milwaukee, Wisconsin 53201, USA
| | - Shunsuke Yoshizawa
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Ibaraki 305-0047, Japan
| | - Fumio Komori
- Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan
| | - Shik Shin
- Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan
| | - Michael Weinert
- Department of Physics, University of Wisconsin-Milwaukee, Wisconsin 53201, USA
| | - Takashi Uchihashi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Kazuyuki Sakamoto
- Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
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50
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Zhang X, Zhu T, Huang J, Wang Q, Cong X, Bi X, Tang M, Zhang C, Zhou L, Zhang D, Su T, Dai X, Meng K, Li Z, Qiu C, Zhao WW, Tan PH, Zhang H, Yuan H. Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS 2 with an Electric Double Layer Interface. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46900-46907. [PMID: 32931238 DOI: 10.1021/acsami.0c12165] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interlayer coupling in two-dimensional (2D) layered materials plays an important role in controlling their properties. 2H- and 3R-MoS2 with different stacking orders and the resulting interlayer coupling have been recently discovered to have different band structures and a contrast behavior in valley physics. However, the role of carrier doping in interlayer coupling in 2D materials remains elusive. Here, based on the electric double layer interface, we demonstrated the experimental observation of carrier doping-enhanced interlayer coupling in 3R-MoS2. A remarkable tuning of interlayer Raman modes can be observed by changing the stacking sequence and carrier doping near their monolayer limit. The modulated interlayer vibration modes originated from the interlayer coupling show a doping-induced blue shift and are supposed to be associated with the interlayer coupling enhancement, which is further verified using our first-principles calculations. Such an electrical control of interlayer coupling of layered materials in an electrical gating geometry provides a new degree of freedom to modify the physical properties in 2D materials.
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Affiliation(s)
- Xi Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Tongshuai Zhu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Qian Wang
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Ming Tang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Caorong Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Ling Zhou
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Dongqin Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
- Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China
| | - Tong Su
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Xueting Dai
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Kui Meng
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Wei-Wei Zhao
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- School of Physics, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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