1
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Luan Y, Yan S, Panda K, Majumder A, Guan J, Mittapally R, Meyhofer E, Reddy P. The Metal-Insulator Transition in Vanadium Oxide Nanofilms Enables Microkelvin-Resolution Thermometry. NANO LETTERS 2024; 24:7048-7054. [PMID: 38813994 DOI: 10.1021/acs.nanolett.4c01535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
High-resolution thermometry is critical for probing nanoscale energy transport. Here, we demonstrate how high-resolution thermometry can be accomplished using vanadium oxide (VOx), which features a sizable temperature-dependence of its resistance at room temperature and an even stronger dependence at its metal-insulator-transition (MIT) temperature. We microfabricate VOx nanofilm-based electrical resistance thermometers that undergo a metal-insulator-transition at ∼337 K and systematically quantify their temperature-dependent resistance, noise characteristics, and temperature resolution. We show that VOx sensors can achieve, in a bandwidth of ∼16 mHz, a temperature resolution of ∼5 μK at room temperature (∼300 K) and a temperature resolution of ∼1 μK at the MIT (∼337 K) when the amplitude of temperature perturbations is in the microkelvin range, which, in contrast to larger perturbations, is found to avoid hysteric resistance responses. These results demonstrate that VOx-based thermometers offer a ∼10-50-fold improvement in resolution over widely used Pt-based thermometers.
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Affiliation(s)
- Yuxuan Luan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Shen Yan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Kanishka Panda
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Ayan Majumder
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Jian Guan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Rohith Mittapally
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Edgar Meyhofer
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Pramod Reddy
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
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2
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Kim SH, Choi PK, Lee YB, Kim TS, Jo MS, Lee SY, Min HW, Yoon JB. An experimental and numerical study on adhesion force at the nanoscale. NANOSCALE ADVANCES 2024; 6:2013-2025. [PMID: 38633052 PMCID: PMC11019507 DOI: 10.1039/d3na01044a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 02/14/2024] [Indexed: 04/19/2024]
Abstract
Adhesion has attracted great interest in science and engineering especially in the field pertaining to nano-science because every form of physical contact is fundamentally a macroscopic observation of interactions between nano-asperities under the adhesion phenomenon. Despite its importance, no practical adhesion prediction model has been developed due to the complexity of examining contact between nano-asperities. Here, we scrutinized the contact phenomenon and developed a contact model, reflecting the physical sequence in which adhesion develops. For the first time ever, our model analyzes the adhesion force and contact properties, such as separation distance, contact location, actual contact area, and the physical deformation of the asperities, between rough surfaces. Through experiments using atomic force microscopy, we demonstrated a low absolute percentage error of 2.8% and 6.55% between the experimental and derived data for Si-Si and Mo-Mo contacts, respectively, and proved the accuracy and practicality of our model in the analysis of the adhesion phenomenon.
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Affiliation(s)
- Su-Hyun Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
- Samsung Electronics Co., Ltd. 1, Samsungjeonja-ro Hwaseong-si Gyeonggi-do 18448 Republic of Korea
| | - Pan-Kyu Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
- Samsung Electronics Co., Ltd. 1, Samsungjeonja-ro Hwaseong-si Gyeonggi-do 18448 Republic of Korea
| | - Yong-Bok Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - Tae-Soo Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - Min-Seung Jo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - So-Young Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
| | - Hyun-Woo Min
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
- Samsung Electronics Co., Ltd. 1, Samsungjeonja-ro Hwaseong-si Gyeonggi-do 18448 Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 Republic of Korea
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3
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Šilhavík M, Kumar P, Levinský P, Zafar ZA, Hejtmánek J, Červenka J. Anderson Localization of Phonons in Thermally Superinsulating Graphene Aerogels with Metal-Like Electrical Conductivity. SMALL METHODS 2024:e2301536. [PMID: 38577909 DOI: 10.1002/smtd.202301536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Revised: 03/24/2024] [Indexed: 04/06/2024]
Abstract
In the quest to improve energy efficiency and design better thermal insulators, various engineering strategies have been extensively investigated to minimize heat transfer through a material. Yet, the suppression of thermal transport in a material remains elusive because heat can be transferred by multiple energy carriers. Here, the realization of Anderson localization of phonons in a random 3D elastic network of graphene is reported. It is shown that thermal conductivity in a cellular graphene aerogel can be drastically reduced to 0.9 mW m-1 K-1 by the application of compressive strain while keeping a high metal-like electrical conductivity of 120 S m-1 and ampacity of 0.9 A. The experiments reveal that the strain can cause phonon localization over a broad compression range. The remaining heat flow in the material is dominated by charge transport. Conversely, electrical conductivity exhibits a gradual increase with increasing compressive strain, opposite to the thermal conductivity. These results imply that strain engineering provides the ability to independently tune charge and heat transport, establishing a new paradigm for controlling phonon and charge conduction in solids. This approach will enable the development of a new type of high-performance insulation solutions and thermally superinsulating materials with metal-like electrical conductivity.
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Affiliation(s)
- Martin Šilhavík
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Prabhat Kumar
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Petr Levinský
- Department of Magnetics and Superconductors, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Zahid Ali Zafar
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Jiří Hejtmánek
- Department of Magnetics and Superconductors, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Jiří Červenka
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
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4
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Shein-Lumbroso O, Gerry M, Shastry A, Vilan A, Segal D, Tal O. Delta-T Flicker Noise Demonstrated with Molecular Junctions. NANO LETTERS 2024; 24:1981-1987. [PMID: 38291719 PMCID: PMC10870783 DOI: 10.1021/acs.nanolett.3c04445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 12/26/2023] [Accepted: 01/17/2024] [Indexed: 02/01/2024]
Abstract
Electronic flicker noise is recognized as the most abundant noise in electronic conductors, either as an unwanted contribution or as a source of information on electron transport mechanisms and material properties. This noise is typically observed when a voltage difference is applied across a conductor or current is flowing through it. Here, we identify an unknown type of electronic flicker noise that is found when a temperature difference is applied across a nanoscale conductor in the absence of a net charge current or voltage bias. The revealed delta-T flicker noise is demonstrated in molecular junctions and characterized using quantum transport theory. This noise is expected to arise in nanoscale electronic conductors subjected to unintentional temperature gradients, where it can be a performance-limiting factor. On the positive side, delta-T flicker noise can detect temperature differences across a large variety of nanoscale conductors, down to atomic-scale junctions with no special setup requirements.
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Affiliation(s)
- Ofir Shein-Lumbroso
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 7610001, Israel
| | - Matthew Gerry
- Department
of Physics, University of Toronto, 60 Saint George Street, Toronto, Ontario M5S 1A7, Canada
| | - Abhay Shastry
- Department
of Chemistry and Centre for Quantum Information and Quantum Control, University of Toronto, 80 Saint George Street, Toronto, Ontario M5S 3H6, Canada
| | - Ayelet Vilan
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 7610001, Israel
| | - Dvira Segal
- Department
of Physics, University of Toronto, 60 Saint George Street, Toronto, Ontario M5S 1A7, Canada
- Department
of Chemistry and Centre for Quantum Information and Quantum Control, University of Toronto, 80 Saint George Street, Toronto, Ontario M5S 3H6, Canada
| | - Oren Tal
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 7610001, Israel
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5
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Hohm U, Schiller C. Testing the Minimum System Entropy and the Quantum of Entropy. ENTROPY (BASEL, SWITZERLAND) 2023; 25:1511. [PMID: 37998203 PMCID: PMC10670145 DOI: 10.3390/e25111511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 10/25/2023] [Accepted: 10/31/2023] [Indexed: 11/25/2023]
Abstract
Experimental and theoretical results about entropy limits for macroscopic and single-particle systems are reviewed. All experiments confirm the minimum system entropy S⩾kln2. We clarify in which cases it is possible to speak about a minimum system entropykln2 and in which cases about a quantum of entropy. Conceptual tensions with the third law of thermodynamics, with the additivity of entropy, with statistical calculations, and with entropy production are resolved. Black hole entropy is surveyed. Claims for smaller system entropy values are shown to contradict the requirement of observability, which, as possibly argued for the first time here, also implies the minimum system entropy kln2. The uncertainty relations involving the Boltzmann constant and the possibility of deriving thermodynamics from the existence of minimum system entropy enable one to speak about a general principle that is valid across nature.
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Affiliation(s)
- Uwe Hohm
- Institut für Physikalische und Theoretische Chemie, Technische Universität Braunschweig, Gaußstr. 17, 38106 Braunschweig, Germany
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6
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Polanco CA, van Roekeghem A, Brisuda B, Saminadayar L, Bourgeois O, Mingo N. The phonon quantum of thermal conductance: Are simulations and measurements estimating the same quantity? SCIENCE ADVANCES 2023; 9:eadi7439. [PMID: 37831773 PMCID: PMC11090371 DOI: 10.1126/sciadv.adi7439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/11/2023] [Indexed: 10/15/2023]
Abstract
The thermal conductance quantum is a fundamental quantity in quantum transport theory. However, two decades after its first reported measurements and calculations for phonons in suspended nanostructures, reconciling experiments and theory remains elusive. Our massively parallel calculations of phonon transport in micrometer-sized three-dimensional structures suggest that part of the disagreement between theory and experiment stems from the inadequacy of macroscopic concepts to analyze the data. The computed local temperature distribution in the wave ballistic nonequilibrium regime shows that the spatial placement and dimensions of thermometers, heaters, and supporting microbeams in the suspended structures can noticeably affect the thermal conductance's measured values. In addition, diffusive transport assumptions made in the data analysis may result in measured values that considerably differ from the actual thermal conductance of the structure. These results urge for experimental validation of the suitability of diffusive transport assumptions in measuring devices operating at sub-kelvin temperatures.
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Affiliation(s)
- Carlos A. Polanco
- Université Grenoble Alpes, CEA, LITEN, 17 rue des Martyrs, Grenoble, France
| | | | - Boris Brisuda
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Laurent Saminadayar
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Olivier Bourgeois
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Natalio Mingo
- Université Grenoble Alpes, CEA, LITEN, 17 rue des Martyrs, Grenoble, France
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7
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Gemma A, Tabatabaei F, Drechsler U, Zulji A, Dekkiche H, Mosso N, Niehaus T, Bryce MR, Merabia S, Gotsmann B. Full thermoelectric characterization of a single molecule. Nat Commun 2023; 14:3868. [PMID: 37391406 PMCID: PMC10313753 DOI: 10.1038/s41467-023-39368-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 06/09/2023] [Indexed: 07/02/2023] Open
Abstract
Molecules are predicted to be chemically tunable towards high thermoelectric efficiencies and they could outperform existing materials in the field of energy conversion. However, their capabilities at the more technologically relevant temperature of 300 K are yet to be demonstrated. A possible reason could be the lack of a comprehensive technique able to measure the thermal and (thermo)electrical properties, including the role of phonon conduction. Here, by combining the break junction technique with a suspended heat-flux sensor, we measured the total thermal and electrical conductance of a single molecule, at room temperature, together with its Seebeck coefficient. We used this method to extract the figure of merit zT of a tailor-made oligo(phenyleneethynylene)-9,10-anthracenyl molecule with dihydrobenzo[b]thiophene anchoring groups (DHBT-OPE3-An), bridged between gold electrodes. The result is in excellent agreement with predictions from density functional theory and molecular dynamics. This work represents the first measurement, within the same setup, of experimental zT of a single molecule at room temperature and opens new opportunities for the screening of several possible molecules in the light of future thermoelectric applications. The protocol is verified using SAc-OPE3, for which individual measurements for its transport properties exist in the literature.
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Affiliation(s)
- Andrea Gemma
- IBM Research Europe - Zurich, 8803, Rueschlikon, Switzerland
| | - Fatemeh Tabatabaei
- Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France
| | - Ute Drechsler
- IBM Research Europe - Zurich, 8803, Rueschlikon, Switzerland
| | - Anel Zulji
- IBM Research Europe - Zurich, 8803, Rueschlikon, Switzerland
| | - Hervé Dekkiche
- Department of Chemistry, Durham University, Durham, DH1 3LE, UK
| | - Nico Mosso
- IBM Research Europe - Zurich, 8803, Rueschlikon, Switzerland
| | - Thomas Niehaus
- Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France
| | - Martin R Bryce
- Department of Chemistry, Durham University, Durham, DH1 3LE, UK
| | - Samy Merabia
- Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, Villeurbanne, France
| | - Bernd Gotsmann
- IBM Research Europe - Zurich, 8803, Rueschlikon, Switzerland.
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8
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Sun Q, Liu W, Huang D, Huang X, Xu S, Wang J, Ye Z, Wang X, Wu S, Yue Y. Molecular dynamics study on thermal conductance between a nanotip and a substrate under vertical forces and horizontal sliding. Phys Chem Chem Phys 2023; 25:5510-5519. [PMID: 36723186 DOI: 10.1039/d2cp04655e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
The heat transfer between a nanotip and its substrate is extremely complex but is a key factor in determining the measurement accuracy in tip-assisted nanomanufacturing and thermometry. In this work, the heat transfer from the nanotip to the substrate during sliding is investigated using molecular dynamics simulations. Interfacial interaction and bond formation are analyzed during the sliding process. The results show that the increase of vertical force would greatly improve the interface thermal conductance between the nanotip and the substrate. It is found that more bonds are formed and there are larger contact areas at the interface. In addition, we found that the thermal conductivity of the nanotip is another obstacle for heat transfer between the tip and substrate and it is greatly limited by the nanotip diameter near contact which is close to or even smaller than the phonon mean free path. Meanwhile, the dynamic formation and breakage of the covalent bonds during the sliding could gradually smoothen the tip apex and enhance the thermal transport at the interface. This work provides guidance for the thermal design of a nanotip-substrate system for nanoscale thermal transport measurements.
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Affiliation(s)
- Qiangsheng Sun
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Wenxiang Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Dezhao Huang
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Xiaona Huang
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Shen Xu
- School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
| | - Jianmei Wang
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Zhijiang Ye
- Department of Mechanical and Manufacturing Engineering, Miami University, Ohio 45056, USA
| | - Xiaosun Wang
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Shijing Wu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Yanan Yue
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China. .,Department of Mechanical and Manufacturing Engineering, Miami University, Ohio 45056, USA
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9
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Palafox S, Román-Ancheyta R, Çakmak B, Müstecaplıoğlu ÖE. Heat transport and rectification via quantum statistical and coherence asymmetries. Phys Rev E 2022; 106:054114. [PMID: 36559439 DOI: 10.1103/physreve.106.054114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2022] [Accepted: 10/19/2022] [Indexed: 06/17/2023]
Abstract
Recent experiments at the nanoscales confirm that thermal rectifiers, the thermal equivalent of electrical diodes, can operate in the quantum regime. We present a thorough investigation of the effect of different particle exchange statistics, coherence, and collective interactions on the quantum heat transport of rectifiers with two-terminal junctions. Using a collision model approach to describe the open system dynamics, we obtain a general expression of the nonlinear heat flow that fundamentally deviates from the Landauer formula whenever quantum statistical or coherence asymmetries are present in the bath particles. Building on this, we show that heat rectification is possible even with symmetric medium-bath couplings if the two baths differ in quantum statistics or coherence. Furthermore, the associated thermal conductance vanishes exponentially at low temperatures as in the Coulomb-blockade effect. However, at high temperatures it acquires a power-law behavior depending on the quantum statistics. Our results can be significant for heat management in hybrid open quantum systems or solid-state thermal circuits.
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Affiliation(s)
- Stephania Palafox
- Instituto Nacional de Astrofísica, Óptica y Electrónica, Calle Luis Enrique Erro No.1 Santa María Tonantzintla, Puebla CP 72840, Mexico
| | - Ricardo Román-Ancheyta
- Instituto Nacional de Astrofísica, Óptica y Electrónica, Calle Luis Enrique Erro No.1 Santa María Tonantzintla, Puebla CP 72840, Mexico
| | - Barış Çakmak
- College of Engineering and Natural Sciences, Bahçeşehir University, Beşiktaş, Istanbul 34353, Türkiye
- TUBITAK Research Institute for Fundamental Sciences, 41470 Gebze, Türkiye
| | - Özgür E Müstecaplıoğlu
- TUBITAK Research Institute for Fundamental Sciences, 41470 Gebze, Türkiye
- Department of Physics, Koç University, İstanbul, Sarıyer, 34450, Türkiye
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10
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Khosravi A, Lainé A, Vanossi A, Wang J, Siria A, Tosatti E. Understanding the rheology of nanocontacts. Nat Commun 2022; 13:2428. [PMID: 35508482 PMCID: PMC9068906 DOI: 10.1038/s41467-022-30096-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 04/13/2022] [Indexed: 11/09/2022] Open
Abstract
Mechanical stiffness, as opposed to softness, is a fundamental property of solids. Its persistence or rheological evolution in vibrating solid-solid nanocontacts is important in physics, materials science and technology. A puzzling apparent liquefaction under oscillatory strain, totally unexpected at room temperature, was suggested by recent experiments on solid gold nano-junctions. Here we show theoretically that realistically simulated nanocontacts actually remain crystalline even under large oscillatory strains. Tensile and compressive slips, respectively of “necking” and “bellying” types, do take place, but recover reversibly even during fast oscillatory cycles. We also show that, counterintuitively, the residual stress remains tensile after both slips, driving the averaged stiffness from positive to negative, thus superficially mimicking a liquid’s. Unlike a liquid, however, rheological softening occurs by stick-slip, predicting largely frequency independent stiffness with violent noise in stress and conductance, properties compatible with experiments. The baffling large amplitude rheology of gold nanocontacts and its consequences should apply, with different parameters, to many other metals. The rigidity of solid nanocontacts formed when metals touch is apparently lost liquidlike under large mechanical oscillations. As we show theoretically, there is no melting but oscillated nanocontacts undergo a remarkable reversible stick-slip rheology.
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Affiliation(s)
- Ali Khosravi
- International School for Advanced Studies (SISSA), I-34136, Trieste, Italy.,International Centre for Theoretical Physics, I-34151, Trieste, Italy.,CNR-IOM, Consiglio Nazionale delle Ricerche - Istituto Officina dei Materiali, c/o SISSA, 34136, Trieste, Italy
| | - Antoine Lainé
- Laboratoire de Physique de lÉcole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université Universitté Paris-Diderot, Sorbonne Paris Cité, UMR CNRS 8550, Paris, France
| | - Andrea Vanossi
- International School for Advanced Studies (SISSA), I-34136, Trieste, Italy.,CNR-IOM, Consiglio Nazionale delle Ricerche - Istituto Officina dei Materiali, c/o SISSA, 34136, Trieste, Italy
| | - Jin Wang
- International School for Advanced Studies (SISSA), I-34136, Trieste, Italy
| | - Alessandro Siria
- Laboratoire de Physique de lÉcole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université Universitté Paris-Diderot, Sorbonne Paris Cité, UMR CNRS 8550, Paris, France
| | - Erio Tosatti
- International School for Advanced Studies (SISSA), I-34136, Trieste, Italy. .,International Centre for Theoretical Physics, I-34151, Trieste, Italy. .,CNR-IOM, Consiglio Nazionale delle Ricerche - Istituto Officina dei Materiali, c/o SISSA, 34136, Trieste, Italy.
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11
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Tang W, Zhang X, Yu H, Gao L, Zhang Q, Wei X, Hong M, Gu L, Liao Q, Kang Z, Zhang Z, Zhang Y. A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory. SMALL METHODS 2022; 6:e2101583. [PMID: 35212464 DOI: 10.1002/smtd.202101583] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In2 Se3 , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 104 at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In2 Se3 for reliable service in high temperature either from self-heating or harsh environments.
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Affiliation(s)
- Wenhui Tang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qinghua Zhang
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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12
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Park J, Kodaimati MS, Belding L, Root SE, Schatz GC, Whitesides GM. Controlled Hysteresis of Conductance in Molecular Tunneling Junctions. ACS NANO 2022; 16:4206-4216. [PMID: 35230085 DOI: 10.1021/acsnano.1c10155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The problem this paper addresses is the origin of the hysteretic behavior in two-terminal molecular junctions made from an EGaIn electrode and self-assembled monolayers of alkanethiolates terminated in chelates (transition metal dichlorides complexed with 2,2'-bipyridine; BIPY-MCl2). The hysteresis of conductance displayed by these BIPY-MCl2 junctions changes in magnitude depending on the identity of the metal ion (M) and the window of the applied voltage across the junction. The hysteretic behavior of conductance in these junctions appears only in an incoherent (Fowler-Nordheim) tunneling regime. When the complexed metal ion is Mn(II), Fe(II), Co(II), or Ni(II), both incoherent tunneling and hysteresis are observed for a voltage range between +1.0 V and -1.0 V. When the metal ion is Cr(II) or Cu(II), however, only resonant (one-step) tunneling is observed, and the junctions exhibit no hysteresis and do not enter the incoherent tunneling regime. Using this correlation, the conductance characteristics of BIPY-MCl2 junctions can be controlled. This voltage-induced change of conductance demonstrates a simple, fast, and reversible way (i.e., by changing the applied voltage) to modulate conductance in molecular tunneling junctions.
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Affiliation(s)
- Junwoo Park
- Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
- Department of Chemistry, Sogang University, Mapo-gu, Seoul 04107, Republic of Korea
| | - Mohamad S Kodaimati
- Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Lee Belding
- Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Samuel E Root
- Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - George C Schatz
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, United States
| | - George M Whitesides
- Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States
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13
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Isshiki Y, Li D, Kiguchi M, Nishino T, Pauly F, Fujii S. Structural Asymmetry of Metallic Single-Atom Contacts Detected by Current-Voltage Characteristics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11919-11926. [PMID: 35225596 DOI: 10.1021/acsami.1c24096] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The complex behavior of the simplest atomic-scale conductors indicates that the electrode structure itself is significant in the design of future nanoscale devices. In this study, the structural asymmetry of metallic atomic contacts formed between two macroscopic Au electrodes at room temperature was investigated. Characteristic signatures of the structural asymmetries were detected by fast current-voltage (I-V) measurements with a time resolution of approximately 100 μs. Statistical analysis of more than 300,000 I-V curves obtained from more than 1000 contact-stretching processes demonstrates that the current rectification properties are correlated with the conductance of the nanocontacts. A substantial suppression of the variation in current rectification was observed for the atomic contacts with integer multiples of the conductance quantum. Statistical analysis of the time-resolved I-V curves revealed that the current rectification variations increased significantly from 500 μs onward before the breakage of the atomic contacts. Ab initio atomistic simulations of the stretching processes and corresponding I-V characteristics confirmed the magnitude of the rectification and related it to the structural asymmetries in the breakdown process of the junctions. Overall, we provide a better understanding of the interplay between geometric and electronic structures at atomically defined metal-metal interfaces by probing charge transport properties in extremely sensitive nanocontacts.
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Affiliation(s)
- Yuji Isshiki
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
| | - Dongzhe Li
- CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - Manabu Kiguchi
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
| | - Tomoaki Nishino
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
| | - Fabian Pauly
- Institute of Physics, University of Augsburg, 86135 Augsburg, Germany
| | - Shintaro Fujii
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
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14
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Waissman J, Anderson LE, Talanov AV, Yan Z, Shin YJ, Najafabadi DH, Rezaee M, Feng X, Nocera DG, Taniguchi T, Watanabe K, Skinner B, Matveev KA, Kim P. Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry. NATURE NANOTECHNOLOGY 2022; 17:166-173. [PMID: 34782778 DOI: 10.1038/s41565-021-01015-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/22/2021] [Indexed: 06/13/2023]
Abstract
In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. Here we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.
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Affiliation(s)
- Jonah Waissman
- Department of Physics, Harvard University, Cambridge, MA, USA
| | | | - Artem V Talanov
- Department of Physics, Harvard University, Cambridge, MA, USA
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Zhongying Yan
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Young J Shin
- Department of Physics, Harvard University, Cambridge, MA, USA
| | | | - Mehdi Rezaee
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Xiaowen Feng
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Daniel G Nocera
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Brian Skinner
- Department of Physics, The Ohio State University, Columbus, OH, USA
| | | | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA, USA.
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
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15
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Majidi D, Josefsson M, Kumar M, Leijnse M, Samuelson L, Courtois H, Winkelmann CB, Maisi VF. Quantum Confinement Suppressing Electronic Heat Flow below the Wiedemann-Franz Law. NANO LETTERS 2022; 22:630-635. [PMID: 35030004 PMCID: PMC8802316 DOI: 10.1021/acs.nanolett.1c03437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
The Wiedemann-Franz law states that the charge conductance and the electronic contribution to the heat conductance are proportional. This sets stringent constraints on efficiency bounds for thermoelectric applications, which seek a large charge conduction in response to a small heat flow. We present experiments based on a quantum dot formed inside a semiconducting InAs nanowire transistor, in which the heat conduction can be tuned significantly below the Wiedemann-Franz prediction. Comparison with scattering theory shows that this is caused by quantum confinement and the resulting energy-selective transport properties of the quantum dot. Our results open up perspectives for tailoring independently the heat and electrical conduction properties in semiconductor nanostructures.
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Affiliation(s)
- Danial Majidi
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, 38042 Grenoble, France
| | - Martin Josefsson
- NanoLund
and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Mukesh Kumar
- NanoLund
and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Martin Leijnse
- NanoLund
and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Lars Samuelson
- NanoLund
and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Hervé Courtois
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, 38042 Grenoble, France
| | - Clemens B. Winkelmann
- Université
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, 38042 Grenoble, France
| | - Ville F. Maisi
- NanoLund
and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
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16
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Zang Y, Di C, Geng Z, Yan X, Ji D, Zheng N, Jiang X, Fu H, Wang J, Guo W, Sun H, Han L, Zhou Y, Gu Z, Kong D, Aramberri H, Cazorla C, Íñiguez J, Rurali R, Chen L, Zhou J, Wu D, Lu M, Nie Y, Chen Y, Pan X. Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105778. [PMID: 34676925 DOI: 10.1002/adma.202105778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 10/13/2021] [Indexed: 06/13/2023]
Abstract
Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.
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Affiliation(s)
- Yipeng Zang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chen Di
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhiming Geng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xuejun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Dianxiang Ji
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ningchong Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xingyu Jiang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hanyu Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jianjun Wang
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Wei Guo
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yunlei Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Desheng Kong
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
| | - Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona, E-08034, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Riccardo Rurali
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra, 08193, Spain
| | - Longqing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Minghui Lu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yanfeng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xiaoqing Pan
- Department of Materials Science and Engineering and Department of Physics and Astronomy, University of California, Irvine, 916 Engineering Tower, Irvine, CA, 92697, USA
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17
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Gemma A, Zulji A, Hurtak F, Fatayer S, Kittel A, Calame M, Gotsmann B. Ultra-stable dry cryostat for variable temperature break junction. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:123704. [PMID: 34972437 DOI: 10.1063/5.0064107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2021] [Accepted: 12/01/2021] [Indexed: 06/14/2023]
Abstract
We present the design of a variable temperature setup that uses a pulse tube cryocooler to perform break-junction experiments at variable temperatures ranging from 12 K to room temperature. The use of pulse tube coolers is advantageous because they are easy to use, can be highly automatized, and used to avoid wastage of cryogenic fluids. This is the reason why dry cryostats are conquering more and more fields in cryogenic physics. However, the main drawback is the level of vibration that can be up to several micrometers at the cold-head. The vibrations make the operation of scanning probe-based microscopes challenging. We implemented vibration-damping techniques that allow obtaining a vibration level of 12 pm between the tip and sample. With these adaptations, we show the possibility to perform break junction measurements in a cryogenic environment and keep in place atomic chains of a few nanometers between the two electrodes.
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Affiliation(s)
- Andrea Gemma
- IBM Research - Zurich, 8803 Rueschlikon, Switzerland
| | - Anel Zulji
- IBM Research - Zurich, 8803 Rueschlikon, Switzerland
| | - Femke Hurtak
- IBM Research - Zurich, 8803 Rueschlikon, Switzerland
| | - Shadi Fatayer
- IBM Research - Zurich, 8803 Rueschlikon, Switzerland
| | - Achim Kittel
- Institute of Physics, University of Oldenburg, D-26111 Oldenburg, Germany
| | - Michel Calame
- Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
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18
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Zhang J, Ishizuka K, Tomitori M, Arai T, Hongo K, Maezono R, Tosatti E, Oshima Y. Peculiar Atomic Bond Nature in Platinum Monatomic Chains. NANO LETTERS 2021; 21:3922-3928. [PMID: 33914553 DOI: 10.1021/acs.nanolett.1c00564] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal atomic chains have been reported to change their electronic or magnetic properties by slight mechanical stimulus. However, the mechanical response has been veiled because of lack of information on the bond nature. Here, we clarify the bond nature in platinum (Pt) monatomic chains by our in situ transmission electron microscope method. The stiffness is measured with sub-N/m precision by quartz length-extension resonator. The bond stiffnesses at the middle of the chain and at the connection to the base are estimated to be 25 and 23 N/m, respectively, which are higher than the bulk counterpart. Interestingly, the bond length of 0.25 nm is found to be elastically stretched to 0.31 nm, corresponding to a 24% strain. Such peculiar bond nature could be explained by a novel concept of "string tension". This study is a milestone that will significantly change the way we think about atomic bonds in one-dimension.
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Affiliation(s)
- Jiaqi Zhang
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Keisuke Ishizuka
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Masahiko Tomitori
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Toyoko Arai
- Institute of Science and Engineering, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan
| | - Kenta Hongo
- Research Center for Advanced Computing Infrastructure, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Ryo Maezono
- School of Information Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Erio Tosatti
- International School for Advanced Studies (SISSA), Via Bonomea 265, 34136 Trieste, Italy
- CNR-IOM Democritos National Simulation Center, Via Bonomea 265, 34136 Trieste, Italy
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34151 Trieste, Italy
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
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19
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Roldán JB, González-Cordero G, Picos R, Miranda E, Palumbo F, Jiménez-Molinos F, Moreno E, Maldonado D, Baldomá SB, Moner Al Chawa M, de Benito C, Stavrinides SG, Suñé J, Chua LO. On the Thermal Models for Resistive Random Access Memory Circuit Simulation. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1261. [PMID: 34065014 PMCID: PMC8151724 DOI: 10.3390/nano11051261] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2021] [Revised: 04/28/2021] [Accepted: 05/01/2021] [Indexed: 11/23/2022]
Abstract
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.
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Affiliation(s)
- Juan B. Roldán
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain; (G.G.-C.); (F.J.-M.); (D.M.)
| | - Gerardo González-Cordero
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain; (G.G.-C.); (F.J.-M.); (D.M.)
| | - Rodrigo Picos
- Industrial Engineering and Construction Department, University of Balearic Islands, 07122 Palma, Spain; (R.P.); (C.d.B.)
| | - Enrique Miranda
- Department Enginyeria Electrònica, Universitat Autònoma de Barcelona, Edifici Q., 08193 Bellaterra, Spain; (E.M.); (J.S.)
| | - Félix Palumbo
- Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2290, Buenos Aires C1425FQB, Argentina;
| | - Francisco Jiménez-Molinos
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain; (G.G.-C.); (F.J.-M.); (D.M.)
| | - Enrique Moreno
- UJM-St-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, Institute of Optics Graduate School, University Lyon, F-42023 St-Etienne, France;
| | - David Maldonado
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain; (G.G.-C.); (F.J.-M.); (D.M.)
| | - Santiago B. Baldomá
- Unidad de Investigación y Desarrollo de las Ingenierías (UIDI), Facultad Regional Buenos Aires, Universidad Tecnológica Nacional, Medrano 951, Buenos Aires C1179AAQ, Argentina;
| | - Mohamad Moner Al Chawa
- Institute of Circuits and Systems, Technische Universität Dresden, 01062 Dresden, Germany;
| | - Carol de Benito
- Industrial Engineering and Construction Department, University of Balearic Islands, 07122 Palma, Spain; (R.P.); (C.d.B.)
| | - Stavros G. Stavrinides
- School of Science and Technology, Thermi University Campus, International Hellenic University, 57001 Thessaloniki, Greece;
| | - Jordi Suñé
- Department Enginyeria Electrònica, Universitat Autònoma de Barcelona, Edifici Q., 08193 Bellaterra, Spain; (E.M.); (J.S.)
| | - Leon O. Chua
- Electrical Engineering and Computer Science Department, University of California, Berkeley, CA 94720-1770, USA;
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20
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Ramezani Akbarabadi S, Rahimpour Soleimani H, Bagheri Tagani M. Side-group-mediated thermoelectric properties of anthracene single-molecule junction with anchoring groups. Sci Rep 2021; 11:8958. [PMID: 33903663 PMCID: PMC8076224 DOI: 10.1038/s41598-021-88297-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2021] [Accepted: 04/12/2021] [Indexed: 02/02/2023] Open
Abstract
Charge transfer characteristics of single-molecule junctions at the nanoscale, and consequently, their thermoelectric properties can be dramatically tuned by chemical or conformational modification of side groups or anchoring groups. In this study, we used density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism in the linear response regime to examine the thermoelectric properties of a side-group-mediated anthracene molecule coupled to gold (Au) electrodes via anchoring groups. In order to provide a comparative inspection three different side groups, i.e. amine, nitro and methyl, in two different positions were considered for the functionalization of the molecule terminated with thiol or isocyanide anchoring groups. We showed that when the anchored molecule is perturbed with side group, the peaks of the transmission spectrum were shifted relative to the Fermi energy in comparison to the unperturbed molecule (i.e. without side group) leading to modified thermoelectric properties of the system. Particularly, in the thiol-terminated molecule the amine side group showed the greatest figure of merit in both positions which was suppressed by the change of side group position. However, in the isocyanide-terminated molecule the methyl side group attained the greatest thermoelectric efficiency where its magnitude was relatively robust to the change of side group position. In this way, different combinations of side groups and anchoring groups can improve or suppress thermopower and the figure of merit of the molecular junction depending on the interplay between charge donating/accepting nature of the functionals or their position.
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Affiliation(s)
- Saeideh Ramezani Akbarabadi
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, Rasht, 41335-1914, Iran.
| | - Hamid Rahimpour Soleimani
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, Rasht, 41335-1914, Iran
| | - Maysam Bagheri Tagani
- Computational Nanophysics Laboratory (CNL), Department of Physics, University of Guilan, Rasht, 41335-1914, Iran
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21
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Al-Mamun M, Orlowski M. Electron tunneling between vibrating atoms in a copper nano-filament. Sci Rep 2021; 11:7413. [PMID: 33795732 PMCID: PMC8016960 DOI: 10.1038/s41598-021-86603-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Accepted: 03/17/2021] [Indexed: 11/08/2022] Open
Abstract
Nanowires, atomic point contacts, and chains of atoms are one-dimensional nanostructures, which display size-dependent quantum effects in electrical and thermal conductivity. In this work a Cu nanofilament of a defined resistance and formed between a Cu and Pt electrode is heated remotely in a controlled way. Depending on the robustness of the conductive filament and the amount of heat transferred several resistance-changing effects are observed. In case of sufficiently fragile nanofilament exhibiting electrical quantum conductance effects and moderate heating applied to it, a dramatic increase of resistance is observed just after the completion of the heating cycle. However, when the filament is allowed to cool off, a spontaneous restoration of the originally set resistance of the filament is observed within less than couple tens of seconds. When the filament is sufficiently fragile or the heating too excessive, the filament is permanently ruptured, resulting in a high resistance of the cell. In contrast, for robust, low resistance filaments, the remote heating does not affect the resistance. The spontaneous restoration of the initial resistance value is explained by electron tunneling between neighboring vibrating Cu atoms. As the vibrations of the Cu atoms subside during the cooling off period, the electron tunneling between the Cu atoms becomes more likely. At elevated temperatures, the average tunneling distance increases, leading to a sharp decrease of the tunneling probability and, consequently, to a sharp increase in transient resistance.
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Affiliation(s)
- Mohammad Al-Mamun
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Marius Orlowski
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, 24061, USA.
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22
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The Effect of Anchor Group on the Phonon Thermal Conductance of Single Molecule Junctions. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11031066] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
There is a worldwide race to convert waste heat to useful energy using thermoelectric materials. Molecules are attractive candidates for thermoelectricity because they can be synthesised with the atomic precision, and intriguing properties due to quantum effects such as quantum interference can be induced at room temperature. Molecules are also expected to show a low thermal conductance that is needed to enhance the performance of thermoelectric materials. Recently, the technological challenge of measuring the thermal conductance of single molecules was overcome. Therefore, it is timely to develop strategies to reduce their thermal conductance for high performance thermoelectricity. In this paper and for the first time, we exploit systematically the effect of anchor groups on the phonon thermal conductance of oligo (phenylene ethynylene) (OPE3) molecules connected to gold electrodes via pyridyl, thiol, methyl sulphide and carbodithioate anchor groups. We show that thermal conductance is affected significantly by the choice of anchor group. The lowest and highest thermal conductances were obtained in the OPE3 with methyl sulphide and carbodithioate anchor groups, respectively. The thermal conductance of OPE3 with thiol anchor was higher than that with methyl sulphide but lower than the OPE3 with pyridyl anchor group.
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Wang J, Chen L, Wang C, Mao C, Yu H, Cui Z. Thermal and electrical transport at nanosized metallic contacts: In the diffusive-ballistic region at room temperature. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:015121. [PMID: 33514238 DOI: 10.1063/5.0028330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2020] [Accepted: 12/28/2020] [Indexed: 06/12/2023]
Abstract
The Wiedemann-Franz law has been proved at the quantized metallic contacts but has never been verified at the nanosized contacts when the electrons travel in the diffusive-ballistic region. Herein, by developing a home-made inelastic tunneling spectroscope, the electrical and thermal resistances of the nanosized metallic contacts are investigated. The contact is established by pressing two wires crosswise against each other under the Lorentz force in the magnetic field. The nonmetallic surface layer is in situ removed by the resistive heating under high vacuum. The temperature dependence of the electrical contact resistance is used to separate the contributions from the diffusive and the ballistic transports. The thermal contact resistance is found to increase linearly with the electrical counterpart, indicating the validity of the Wiedemann-Franz law at the clean metallic contacts.
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Affiliation(s)
- Jianli Wang
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Lu Chen
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Cong Wang
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Chengkun Mao
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Hongmei Yu
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Zhenyu Cui
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
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24
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Xiong Y, Zhao Y, Tao Y, Yao F, Li D, Xu D. Effective Lorenz Number of the Point Contact between Silver Nanowires. NANO LETTERS 2020; 20:8576-8583. [PMID: 33197194 DOI: 10.1021/acs.nanolett.0c03163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electrical and thermal transport through metal point contacts, a key issue in the design and operation of various engineering devices, is of great recent interest. The effective Lorenz number (L), which relates the thermal to electrical conductance of point contacts, could provide valuable information on the relative contribution of electrons and phonons to thermal transport. Through measuring electrical and thermal transport across point contacts between silver nanowires, we report that L significantly deviates from the Sommerfeld value by up to 5.2 times and exhibits nonmonotonic variation with temperature. Analyses show that these observations are due to the more important phonon contribution to the thermal conductance of the point contact as Sharvin resistance greatly hinders electron transport, which is further confirmed by the size dependence of L with a higher value for a smaller contact size. These results provide critical insights into engineering designs involving point contacts between metal nanostructures.
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Affiliation(s)
- Yucheng Xiong
- Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region, China
| | - Yang Zhao
- Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Yi Tao
- Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing 210096, China
| | - Fengju Yao
- Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region, China
| | - Deyu Li
- Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Dongyan Xu
- Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region, China
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25
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Dekkiche H, Gemma A, Tabatabaei F, Batsanov AS, Niehaus T, Gotsmann B, Bryce MR. Electronic conductance and thermopower of single-molecule junctions of oligo(phenyleneethynylene) derivatives. NANOSCALE 2020; 12:18908-18917. [PMID: 32902546 DOI: 10.1039/d0nr04413j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the synthesis and the single-molecule transport properties of three new oligo(phenyleneethynylene) (OPE3) derivatives possessing terminal dihydrobenzo[b]thiophene (DHBT) anchoring groups and various core substituents (phenylene, 2,5-dimethoxyphenylene and 9,10-anthracenyl). Their electronic conductance and their Seebeck coefficient have been determined using scanning tunneling microscopy-based break junction (STM-BJ) experiments between gold electrodes. The transport properties of the molecular junctions have been modelled using DFT-based computational methods which reveal a specific binding of the sulfur atom of the DHBT anchor to the electrodes. The experimentally determined Seebeck coefficient varies between -7.9 and -11.4 μV K-1 in the series and the negative sign is consistent with charge transport through the LUMO levels of the molecules.
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Affiliation(s)
- Hervé Dekkiche
- Department of Chemistry, Durham University, Durham, DH1 3LE, UK.
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26
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Chen H, Sangtarash S, Li G, Gantenbein M, Cao W, Alqorashi A, Liu J, Zhang C, Zhang Y, Chen L, Chen Y, Olsen G, Sadeghi H, Bryce MR, Lambert CJ, Hong W. Exploring the thermoelectric properties of oligo(phenylene-ethynylene) derivatives. NANOSCALE 2020; 12:15150-15156. [PMID: 32658229 DOI: 10.1039/d0nr03303k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Seebeck coefficient measurements provide unique insights into the electronic structure of single-molecule junctions, which underpins their charge and heat transport properties. Since the Seebeck coefficient depends on the slope of the transmission function at the Fermi energy (EF), the sign of the thermoelectric voltage will be determined by the location of the molecular orbital levels relative to EF. Here we investigate thermoelectricity in molecular junctions formed from a series of oligophenylene-ethynylene (OPE) derivatives with biphenylene, naphthalene and anthracene cores and pyridyl or methylthio end-groups. Single-molecule conductance and thermoelectric voltage data were obtained using a home-built scanning tunneling microscope break junction technique. The results show that all the OPE derivatives studied here are dominated by the lowest unoccupied molecular orbital level. The Seebeck coefficients for these molecules follow the same trend as the energy derivatives of their corresponding transmission spectra around the Fermi level. The molecule terminated with pyridyl units has the largest Seebeck coefficient corresponding to the highest slope of the transmission function at EF. Density-functional-theory-based quantum transport calculations support the experimental results.
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Affiliation(s)
- Hang Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | - Sara Sangtarash
- Department of Physics, Lancaster University, LA1 4YB, Lancaster, UK. and School of Engineering, University of Warwick, Coventry CV4 7AL, UK
| | - Guopeng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | | | - Wenqiang Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | - Afaf Alqorashi
- Department of Physics, Lancaster University, LA1 4YB, Lancaster, UK.
| | - Junyang Liu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | - Chunquan Zhang
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yulong Zhang
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Lijue Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | - Yaorong Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
| | - Gunnar Olsen
- Department of Chemistry, Durham University, DH1 3LE, Durham, UK.
| | - Hatef Sadeghi
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK
| | - Martin R Bryce
- Department of Chemistry, Durham University, DH1 3LE, Durham, UK.
| | - Colin J Lambert
- Department of Physics, Lancaster University, LA1 4YB, Lancaster, UK.
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, iChEM, Xiamen University, 361005, Xiamen, China.
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27
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Mykkänen E, Lehtinen JS, Grönberg L, Shchepetov A, Timofeev AV, Gunnarsson D, Kemppinen A, Manninen AJ, Prunnila M. Thermionic junction devices utilizing phonon blocking. SCIENCE ADVANCES 2020; 6:eaax9191. [PMID: 32300644 PMCID: PMC7148110 DOI: 10.1126/sciadv.aax9191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2019] [Accepted: 01/13/2020] [Indexed: 06/11/2023]
Abstract
Electrothermal elements are used in various energy harvesters, coolers, and radiation detectors. The optimal operation of these elements relies on mastering two competing boundary conditions: the maximization of the electrothermal response and the blockade of lattice (phonon) thermal conduction. In this work, we propose and demonstrate that efficient electrothermal operation and phonon blocking can be achieved in solid-state thermionic junctions, paving the way for new phonon-engineered high-efficiency refrigerators and sensors. Our experimental demonstration uses semiconductor-superconductor (Sm-S) junctions where the electrothermal response arises from the superconducting energy gap and the phonon blocking results from the acoustic transmission bottleneck at the junction. We demonstrate a cooling platform where a silicon chip, suspended only from the Sm-S junctions, is cooled by ~40% from the bath temperature. We also show how the observed effect can be used in radiation detectors and multistage electronic refrigerators suitable for cooling of quantum technology devices.
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28
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Heat dissipation in quasi-ballistic single-atom contacts at room temperature. Sci Rep 2019; 9:18677. [PMID: 31822731 PMCID: PMC6904740 DOI: 10.1038/s41598-019-55048-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2019] [Accepted: 11/20/2019] [Indexed: 11/23/2022] Open
Abstract
We report on evaluations of local heating in Au single-atom chains at room temperature. We performed onsite thermometry of atomic-scale Au junctions under applied sinusoidal voltage of variable amplitudes. The AC approach enabled to preclude electromigration effects for characterizing the influence of energy dissipations on the lifetime. We elucidated nonlinear increase in the effective temperature of the current-carrying single-atom chains with the voltage amplitudes, which was attributed to subtle interplay between electron-phonon scattering and electron-mediated thermal transport in the quasi-ballistic conductor. We also found that only 0.2% of the electric power contributed to local heating while the majority was consumed at the diffusive bank. The present findings can be used for thermal management of future integrated nanoelectronics.
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29
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Sivre E, Duprez H, Anthore A, Aassime A, Parmentier FD, Cavanna A, Ouerghi A, Gennser U, Pierre F. Electronic heat flow and thermal shot noise in quantum circuits. Nat Commun 2019; 10:5638. [PMID: 31822660 PMCID: PMC6904624 DOI: 10.1038/s41467-019-13566-8] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 11/08/2019] [Indexed: 11/09/2022] Open
Abstract
When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed of a micron-scale metallic node connected to one electronic channel and a resistance. Heating up the node with Joule dissipation, we separately determine, from complementary noise measurements, both its temperature and the thermal shot noise induced by the temperature difference across the channel. The thermal shot noise predictions are thereby directly validated, and the electronic heat flow is revealed. The latter exhibits a contribution from the channel involving the electrons' partitioning together with the Coulomb interaction. Expanding heat current predictions to include the thermal shot noise, we find a quantitative agreement with experiments.
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Affiliation(s)
- E Sivre
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - H Duprez
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - A Anthore
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France.,Université de Paris, C2N, 91120, Palaiseau, France
| | - A Aassime
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - F D Parmentier
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - A Cavanna
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - A Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - U Gennser
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France
| | - F Pierre
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N), 91120, Palaiseau, France.
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30
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Mosso N, Sadeghi H, Gemma A, Sangtarash S, Drechsler U, Lambert C, Gotsmann B. Thermal Transport through Single-Molecule Junctions. NANO LETTERS 2019; 19:7614-7622. [PMID: 31560850 DOI: 10.1021/acs.nanolett.9b02089] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Molecular junctions exhibit a rich and tunable set of thermal transport phenomena. However, the predicted high thermoelectric efficiencies, phonon quantum interference effects, rectification, and nonlinear heat transport properties of organic molecules are yet to be verified because suitable experimental techniques have been missing. Here, by combining the break junction technique with suspended heat-flux sensors with picowatt per Kelvin sensitivity, we measured the thermal and electrical conductance of single organic molecules at room temperature simultaneously. We used this method to study the thermal transport properties of two model systems, namely, dithiol-oligo(phenylene ethynylene) and octane dithiol junctions with gold electrodes. In agreement with our density functional theory and phase-coherent transport calculations, we show that heat transport across these systems is governed by the phonon mismatch between the molecules and the metallic electrodes. This work represents the first measurement of thermal transport through single molecules and opens new opportunities for studying heat management at the nanoscale level.
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Affiliation(s)
- Nico Mosso
- IBM Research-Zurich , Rueschlikon 8803 , Switzerland
| | - Hatef Sadeghi
- School of Engineering , University of Warwick , Coventry CV4 7AL , United Kingdom
- Physics Department , Lancaster University , Lancaster LA1 4YB , United Kingdom
| | - Andrea Gemma
- IBM Research-Zurich , Rueschlikon 8803 , Switzerland
| | - Sara Sangtarash
- School of Engineering , University of Warwick , Coventry CV4 7AL , United Kingdom
- Physics Department , Lancaster University , Lancaster LA1 4YB , United Kingdom
| | - Ute Drechsler
- IBM Research-Zurich , Rueschlikon 8803 , Switzerland
| | - Colin Lambert
- Physics Department , Lancaster University , Lancaster LA1 4YB , United Kingdom
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31
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Wang J, Yu H, Walbert T, Antoni M, Wang C, Xi W, Muench F, Yang J, Chen Y, Ensinger W. Electrical and thermal conductivities of polycrystalline platinum nanowires. NANOTECHNOLOGY 2019; 30:455706. [PMID: 31370046 DOI: 10.1088/1361-6528/ab37a7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Understanding the electrical and thermal transport properties of polycrystalline metallic nanostructures is of great interest for applications in microelectronics. In view of the diverse experimental results in polycrystalline metallic nanowires and nanofilms, it is a long-standing question whether their electrical and thermal properties can be well predicted by a practical model. By eliminating the effects of electrical and thermal contact resistances, we measure the electrical and thermal conductivities of three different polycrystalline Pt nanowires. The electron scattering at the surface is found to be diffusive, and the charge reflection coefficient at grain boundaries is proved to be a function of the melting point. The Lorenz number is observed to be suppressed from the free-electron value by about 30%, which can be explained by introducing a thermal reflection coefficient in calculating the thermal conductivity to account for the small angle scattering effect involving phonons at the grain boundaries. Using this model, both the electrical and thermal conductivities of the polycrystalline Pt nanowires are calculated at different diameters and temperatures.
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Affiliation(s)
- Jianli Wang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Department of Mechanical Engineering, Southeast University, Nanjing 210096, People's Republic of China
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32
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Chen X, Huang Y, Liu J, Yuan H, Chen H. Thermoelectric Performance of Two-Dimensional AlX (X = S, Se, Te): A First-Principles-Based Transport Study. ACS OMEGA 2019; 4:17773-17781. [PMID: 31681883 PMCID: PMC6822128 DOI: 10.1021/acsomega.9b02235] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2019] [Accepted: 10/02/2019] [Indexed: 06/01/2023]
Abstract
By using the first-principles calculations in combination with the Boltzmann transport theory, we systematically study the thermoelectric properties of AlX (X = S, Se, Te) monolayers as indirect gap semiconductors. The unique electronic density of states, which consists of a rather sharp peak at the valence band maxima and an almost constant band at the conduction band minima, makes AlX (X = S, Se, Te) monolayers excellent thermoelectric materials. The optimized power factors at room temperature are 22.59, 62.59, and 6.79 mW m-1 K-2 under reasonable electronic concentration for AlS, AlSe, and AlTe monolayers, respectively. The figure of merit (zT) increases with temperature and the optimized zT values of 0.52, 0.59, and 0.26 at room temperature are achieved under moderate electronic concentration for AlS, AlSe, and AlTe monolayers, respectively, indicating that two-dimensional layered AlX (X = S, Se, Te) semiconductors, especially AlSe, can be potential candidate matrices for high-performance thermoelectric nanocomposites.
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Affiliation(s)
- Xiaorui Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Yuhong Huang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Jing Liu
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Hong Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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33
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Quantum Phonon Transport in Nanomaterials: Combining Atomistic with Non-Equilibrium Green's Function Techniques. ENTROPY 2019; 21:e21080735. [PMID: 33267449 PMCID: PMC7515264 DOI: 10.3390/e21080735] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2019] [Revised: 07/23/2019] [Accepted: 07/25/2019] [Indexed: 11/16/2022]
Abstract
A crucial goal for increasing thermal energy harvesting will be to progress towards atomistic design strategies for smart nanodevices and nanomaterials. This requires the combination of computationally efficient atomistic methodologies with quantum transport based approaches. Here, we review our recent work on this problem, by presenting selected applications of the PHONON tool to the description of phonon transport in nanostructured materials. The PHONON tool is a module developed as part of the Density-Functional Tight-Binding (DFTB) software platform. We discuss the anisotropic phonon band structure of selected puckered two-dimensional materials, helical and horizontal doping effects in the phonon thermal conductivity of boron nitride-carbon heteronanotubes, phonon filtering in molecular junctions, and a novel computational methodology to investigate time-dependent phonon transport at the atomistic level. These examples illustrate the versatility of our implementation of phonon transport in combination with density functional-based methods to address specific nanoscale functionalities, thus potentially allowing for designing novel thermal devices.
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34
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Cui L, Hur S, Akbar ZA, Klöckner JC, Jeong W, Pauly F, Jang SY, Reddy P, Meyhofer E. Thermal conductance of single-molecule junctions. Nature 2019; 572:628-633. [DOI: 10.1038/s41586-019-1420-z] [Citation(s) in RCA: 85] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2018] [Accepted: 06/26/2019] [Indexed: 12/21/2022]
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35
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Singh G, Kumar K, Moudgil RK. Alloying-induced spin Seebeck effect and spin figure of merit in Pt-based bimetallic atomic wires of noble metals. Phys Chem Chem Phys 2019; 21:20965-20980. [DOI: 10.1039/c9cp01671f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
The chemical potential of electrodes can be tuned to generate pure thermal spin voltages in certain bimetallic wires of noble metals.
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Affiliation(s)
- Gurvinder Singh
- Department of Physics
- S. D. College
- Ambala Cantt-133 001
- India
- Department of Physics
| | - Krishan Kumar
- Department of Physics
- S. D. College
- Ambala Cantt-133 001
- India
| | - R. K. Moudgil
- Department of Physics
- Kurukshetra University
- Kurukshetra – 136 119
- India
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36
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Gao Z, Liu G, Ren J. High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study. ACS APPLIED MATERIALS & INTERFACES 2018; 10:40702-40709. [PMID: 30394087 DOI: 10.1021/acsami.8b11836] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
In 2016, bulk tellurium was experimentally observed as a remarkable thermoelectric material. Recently, two-dimensional (2D) tellurium, called tellurene, has been synthesized and has exhibited unexpected electronic properties compared with the 2D MoS2. They have also been fabricated into air-stable and highly efficient field-effect transistors. There are two stable 2D tellurene phases. One (β-Te) has been confirmed with an ultralow lattice thermal conductivity (κL). However, the study of the transport properties of the other more stable phase, α-Te, is still lacking. Here, we report the thermoelectric performance and phonon properties of α-Te using Boltzmann transport theory and first-principles calculations. A maximum ZT value of 0.83 is achieved under a reasonable hole concentration, suggesting that the monolayer α-Te is a potential competitor in the thermoelectric field.
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Affiliation(s)
- Zhibin Gao
- Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering , Tongji University , Shanghai 200092 , China
| | - Gang Liu
- School of Physics and Engineering , Henan University of Science and Technology , Luoyang 471023 , China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering , Tongji University , Shanghai 200092 , China
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37
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Bürkle M, Asai Y. How To Probe the Limits of the Wiedemann-Franz Law at Nanoscale. NANO LETTERS 2018; 18:7358-7361. [PMID: 30336053 DOI: 10.1021/acs.nanolett.8b03651] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
While the Wiedemann-Franz law is known to be robust for many bulk materials, possible violations have been actively discussed for certain classes of bulk materials such as heavy Fermion materials. At nanoscale on the other hand the limits of the Wiedemann-Franz law and how to probe and control them remains an open question. Therefore, we propose here a systematic way to elucidate the limits of the Wiedemann-Franz law at nanoscale. Using first-principles calculations, we examine the Wiedemann-Franz law in nanoscale conductors, namely in gold and platinum-based atomic wires. We explain the recently observed experimental evidence of the Wiedemann-Franz law in atomic-point contacts, but conversely we show that in regimes not discussed in these experiments notable violations of the Wiedemann-Franz law emerge. Depending on the temperature and gate potential as well as chemical properties and conformation, the violations reach up to 30% for gold and for platinum they can even exceed 350%.
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Affiliation(s)
- Marius Bürkle
- National Institute of Advanced Industrial Science and Technology (AIST) , Research Center for Computational Design of Advanced Functional Materials (CD-FMat) , Central 2, Umezono 1-1-1 , Tsukuba , Ibaraki 305-8568 , Japan
| | - Yoshihiro Asai
- National Institute of Advanced Industrial Science and Technology (AIST) , Research Center for Computational Design of Advanced Functional Materials (CD-FMat) , Central 2, Umezono 1-1-1 , Tsukuba , Ibaraki 305-8568 , Japan
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38
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Tavakoli A, Lulla K, Crozes T, Mingo N, Collin E, Bourgeois O. Heat conduction measurements in ballistic 1D phonon waveguides indicate breakdown of the thermal conductance quantization. Nat Commun 2018; 9:4287. [PMID: 30327470 PMCID: PMC6191430 DOI: 10.1038/s41467-018-06791-0] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2018] [Accepted: 09/21/2018] [Indexed: 11/09/2022] Open
Abstract
Emerging quantum technologies require mastering thermal management, especially at the nanoscale. It is now accepted that thermal metamaterial-based phonon manipulation is possible, especially at sub-kelvin temperatures. In these extreme limits of low temperatures and dimensions, heat conduction enters a quantum regime where phonon exchange obeys the Landauer formalism. Phonon transport is then governed by the transmission coefficients between the ballistic conductor and the thermal reservoirs. Here we report on ultra-sensitive thermal experiments made on ballistic 1D phonon conductors using a micro-platform suspended sensor. Our thermal conductance measurements attain a power sensitivity of 15 attoWatts \documentclass[12pt]{minimal}
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\begin{document}$$\sqrt {{\mathrm{Hz}}} \,^{ - 1}$$\end{document}Hz-1 around 100 mK. Ballistic thermal transport is dominated by non-ideal transmission coefficients and not by the quantized thermal conductance of the nanowire itself. This limitation of heat transport in the quantum regime may have a significant impact on modern thermal management and thermal circuit design. At low temperatures and dimensionality it has become possible to probe the quantum limits of heat transport. Tavakoli et al. show that heat transport through a one-dimensional device can be dominated by non-ideal transmission instead of reaching the regime of thermal conductance quantization.
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Affiliation(s)
- Adib Tavakoli
- Institut NÉEL, CNRS, 25 avenue des Martyrs, 38042, Grenoble, France.,Inst NEEL, Univ. Grenoble Alpes, 38042, Grenoble, France
| | - Kunal Lulla
- Institut NÉEL, CNRS, 25 avenue des Martyrs, 38042, Grenoble, France.,Inst NEEL, Univ. Grenoble Alpes, 38042, Grenoble, France
| | - Thierry Crozes
- Institut NÉEL, CNRS, 25 avenue des Martyrs, 38042, Grenoble, France.,Inst NEEL, Univ. Grenoble Alpes, 38042, Grenoble, France
| | - Natalio Mingo
- LITEN, CEA-Grenoble, 17 avenue des Martyrs, 38054, Grenoble Cedex 9, France
| | - Eddy Collin
- Institut NÉEL, CNRS, 25 avenue des Martyrs, 38042, Grenoble, France.,Inst NEEL, Univ. Grenoble Alpes, 38042, Grenoble, France
| | - Olivier Bourgeois
- Institut NÉEL, CNRS, 25 avenue des Martyrs, 38042, Grenoble, France. .,Inst NEEL, Univ. Grenoble Alpes, 38042, Grenoble, France.
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39
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Möller TB, Ganser A, Kratt M, Dickreuter S, Waitz R, Scheer E, Boneberg J, Leiderer P. Fast quantitative optical detection of heat dissipation by surface plasmon polaritons. NANOSCALE 2018; 10:11894-11900. [PMID: 29897094 DOI: 10.1039/c8nr02489h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Heat management at the nanoscale is an issue of increasing importance. In optoelectronic devices the transport and decay of plasmons contribute to the dissipation of heat. By comparison of experimental data and simulations we demonstrate that it is possible to gain quantitative information about excitation, propagation and decay of surface plasmon polaritons (SPPs) in a thin gold stripe supported by a silicon membrane. The temperature-dependent optical transmissivity of the membrane is used to determine the temperature distribution around the metal stripe with high spatial and temporal resolution. This method is complementary to techniques where the propagation of SPPs is monitored optically, and provides additional information which is not readily accessible by other means. In particular, we demonstrate that the thermal conductivity of the membrane can also be derived from our analysis. The results presented here show the high potential of this tool for heat management studies in nanoscale devices.
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Affiliation(s)
- Thomas B Möller
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany.
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40
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Jarzembski A, Hamian S, Yun J, Crossley J, Park I, Francoeur M, Park K. Feedback control of local hotspot temperature using resistive on-substrate nanoheater/thermometer. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2018; 89:064902. [PMID: 29960578 DOI: 10.1063/1.5020884] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
This article reports the active control of a local hotspot temperature for accurate nanoscale thermal transport measurement. To this end, we have fabricated resistive on-substrate nanoheater/thermometer (NH/T) devices that have a sensing area of ∼350 nm × 300 nm. Feedback-controlled temporal heating and cooling experiments of the NH/T device confirm that the feedback integral gain plays a dominant role in device's response time for various setpoint temperatures. To further verify the integration of the feedback controller with the NH/T devices, a local tip-induced cooling experiment is performed by scanning a silicon tip over the hotspot area in an atomic force microscope platform. By carefully optimizing the feedback gain and the tip scan speed, we can control the hotspot temperature with the accuracy of ∼±1 K for a broad range of setpoints from 325 K to 355 K. The obtained tip-substrate thermal conductance, including the effects of solid-solid conduction, water meniscus, air conduction, and near-field thermal radiation, is found to be a slightly increasing function of temperature in the range of 127 ± 25 to 179 ± 16 nW/K. Our work demonstrates the reliable controllability of a local hotspot temperature, which will allow the further improvement of various nanoscale thermal metrologies including scanning thermal microscopy and nanoscale thermometry.
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Affiliation(s)
- Amun Jarzembski
- Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah 84112, USA
| | - Sina Hamian
- CaSTL Center, Department of Chemistry, University of California, Irvine, California 92697, USA
| | - Jeonghoon Yun
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea
| | - Jacob Crossley
- Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah 84112, USA
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea
| | - Mathieu Francoeur
- Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah 84112, USA
| | - Keunhan Park
- Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah 84112, USA
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41
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Inui S, Stafford CA, Bergfield JP. Emergence of Fourier's Law of Heat Transport in Quantum Electron Systems. ACS NANO 2018; 12:4304-4311. [PMID: 29648783 DOI: 10.1021/acsnano.7b08816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The microscopic origins of Fourier's venerable law of thermal transport in quantum electron systems has remained somewhat of a mystery, given that previous derivations were forced to invoke intrinsic scattering rates far exceeding those occurring in real systems. We propose an alternative hypothesis, namely, that Fourier's law emerges naturally if many quantum states participate in the transport of heat across the system. We test this hypothesis systematically in a graphene flake junction and show that the temperature distribution becomes nearly classical when the broadening of the individual quantum states of the flake exceeds their energetic separation. We develop a thermal resistor network model to investigate the scaling of the sample and contact thermal resistances and show that the latter is consistent with classical thermal transport theory in the limit of large level broadening.
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Affiliation(s)
- Sosuke Inui
- Department of Physics , University of Arizona , 1118 East Fourth Street , Tucson , Arizona 85721 , United States
- Department of Physics , Osaka City University , Sugimoto 3-3-138 , Sumiyoshi-Ku, Osaka 558-8585 , Japan
| | - Charles A Stafford
- Department of Physics , University of Arizona , 1118 East Fourth Street , Tucson , Arizona 85721 , United States
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Kolosov O. Quantum effects: Heat flow in atomic bottlenecks. NATURE NANOTECHNOLOGY 2017; 12:402-403. [PMID: 28166204 DOI: 10.1038/nnano.2016.306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Affiliation(s)
- Oleg Kolosov
- Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
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