Large-scale fabrication of highly ordered sub-20 nm noble metal nanoparticles on silica substrates without metallic adhesion layers

Synthesis of metallic high-entropy alloy nanoparticles

The theoretically infinite compositional space of high-entropy alloys (HEAs) and their novel properties and applications have attracted significant attention from a broader research community. The successful synthesis of high-quality single-phase HEA nanoparticles represents a crucial step in fully unlocking the potential of this new class of materials to drive innovations. This review analyzes the various methods reported in the literature to identify their commonalities and dissimilarities, which allows categorizing these methods into five general strategies. Physical minimization of HEA metals into HEA nanoparticles through cryo-milling represents the typical top-down strategy. The counter bottom-up strategy requires the simultaneous generation and precipitation of metal atoms of different elements on growing nanoparticles. Depending on the metal atom generation process, there are four synthesis strategies: vaporization of metals, burst reduction of metal precursors, thermal shock-induced reduction of metal precursors, and solvothermal reduction of metal precursors. Comparisons among the methods within each strategy, along with discussions, provide insights and guidance for achieving the robust synthesis of HEA nanoparticles.

Laser Controlled Manipulation of Microbubbles on a Surface with Silica-Coated Gold Nanoparticle Array

Microbubble generation and manipulation play critical roles in diverse applications such as microfluidic mixing, pumping, and microrobot propulsion. However, existing methods are typically limited to lateral movements on customized substrates or rely on specific liquids with particular properties or designed concentration gradients, thereby hindering their practical applications. To address this challenge, this paper presents a method that enables robust vertical manipulation of microbubbles. By focusing a resonant laser on hydrophilic silica-coated gold nanoparticle arrays immersed in water, plasmonic microbubbles are generated and detach from the substrates immediately upon cessation of laser irradiation. Using simple laser pulse control, it can achieve an adjustable size and frequency of bubble bouncing, which is governed by the movement of the three-phase contact line during surface wetting. Furthermore, it demonstrates that rising bubbles can be pulled back by laser irradiation induced thermal Marangoni flow, which is verified by particle image velocimetry measurements and numerical simulations. This study provides novel insights into flexible bubble manipulation and integration in microfluidics, with significant implications for various applications including mixing, drug delivery, and the development of soft actuators.

A hybrid and scalable nanofabrication approach for bio-inspired bactericidal silicon nanospike surfaces

Insects and plants exhibit bactericidal properties through surface nanostructures, such as nanospikes, which physically kill bacteria without antibiotics or chemicals. This is a promising new avenue for achieving antibacterial surfaces. However, the existing methods for fabricating nanospikes are incapable of producing uniform nanostructures on a large scale and in a cost-effective manner. In this paper, a scalable nanofabrication method involving the application of nanosphere lithography and reactive ion etching for constructing nanospike surfaces is demonstrated. Low-cost silicon nanospikes with uniform spacing that were sized similarly to biological nanospikes on cicada wings with a 4-inch wafer scale were fabricated. The spacing, tip radius, and base diameter of the silicon nanospikes were controlled precisely by adjusting the nanosphere diameters, etching conditions, and diameter reduction. The bactericidal properties of the silicon nanospikes with 300 nm spacing were measured quantitatively using the standard viability plate count method; they killed E. coli cells with 59 % efficiency within 30 h. The antibacterial ability of the nanospike surface was further indicated by the morphological differences between bacteria observed in the scanning electron microscopic images as well as the live/dead stains of fluorescence signals. The fabrication process combined the advantages of both top-down and bottom-up methods and was a significant step toward affordable bio-inspired antibacterial surfaces.

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

Convex cylindrical silicon nanostructures, also referred to as silicon nanocones, find their value in many applications ranging from photovoltaics to nanofluidics, nanophotonics, and nanoelectronic applications. To fabricate silicon nanocones, both bottom-up and top-down methods can be used. The top-down method presented in this work relies on pre-shaping of silicon nanowires by ion beam etching followed by self-limited thermal oxidation. The combination of pre-shaping and oxidation obtains high-density, high aspect ratio, periodic, and vertically aligned sharp single-crystalline silicon nanocones at the wafer-scale. The homogeneity of the presented nanocones is unprecedented and may give rise to applications where numerical modeling and experiments are combined without assumptions about morphology of the nanocone. The silicon nanocones are organized in a square periodic lattice, with 250 nm pitch giving arrays containing 1.6 billion structures per square centimeter. The nanocone arrays were several mm² in size and located centimeters apart across a 100-mm-diameter single-crystalline silicon (100) substrate. For single nanocones, tip radii of curvature < 3 nm were measured. The silicon nanocones were vertically aligned, baring a height variation of < 5 nm (< 1%) for seven adjacent nanocones, whereas the height inhomogeneity is < 80 nm (< 16%) across the full wafer scale. The height inhomogeneity can be explained by inhomogeneity present in the radii of the initial columnar polymer mask. The presented method might also be applicable to silicon micro- and nanowires derived through other top-down or bottom-up methods because of the combination of ion beam etching pre-shaping and thermal oxidation sharpening. A novel method is presented where argon ion beam etching and thermal oxidation sharpening are combined to tailor a high-density single-crystalline silicon nanowire array into a vertically aligned single-crystalline silicon nanocones array with < 3 nm apex radius of curvature tips, at the wafer scale.

Custom-made holey graphene via scanning probe block co-polymer lithography

Oxidative chemical etching of metal nanoparticles (NPs) to produce holey graphene (hG) suffers from the presence of aggregated NPs on the graphene surface triggering heterogeneous etching rates and thereby producing irregular sized holes. To encounter such a challenge, we investigated the use of scanning probe block co-polymer lithography (SPBCL) to fabricate precisely positioned silver nanoparticles (AgNPs) on graphene surfaces with exquisite control over the NP size to prevent their aggregation and consequently produce uniformly distributed holes after oxidative chemical etching. SPBCL experiments were carried out via printing an ink suspension consisting of poly(ethylene oxide-b-2-vinylpyridine) and silver nitrate on a graphene surface in a selected pattern under controlled environmental and instrumental parameters followed by thermal annealing in a gaseous environment to fabricate AgNPs. Scanning electron microscopy revealed the uniform size distribution of AgNPs on the graphene surface with minimal to no aggregation. Four main sizes of AgNPs were obtained (37 ± 3, 45 ± 3, 54 ± 2, and 64 ± 3 nm) via controlling the printing force, z-piezo extension, and dwell time. Energy dispersive X-ray spectroscopy analysis validated the existence of elemental Ag on the graphene surface. Subsequent chemical etching of AgNPs using nitric acid (HNO₃) with the aid of sonication and mechanical agitation produced holes of uniform size distribution generating hG. The obtained I _D/I _G ratios ≤ 0.96 measured by Raman spectroscopy were lower than those commonly reported for GO (I _D/I _G > 1), indicating the removal of more defective C atoms during the etching process to produce hG while preserving the remaining C atoms in ordered or crystalline structures. Indeed, SPBCL could be utilized to fabricate uniformly distributed AgNPs of controlled sizes on graphene surfaces to ultimately produce hG of uniform hole size distribution.

Self-Propelled Detachment upon Coalescence of Surface Bubbles

The removal of microbubbles from substrates is crucial for the efficiency of many catalytic and electrochemical gas evolution reactions in liquids. The current work investigates the coalescence and detachment of bubbles generated from catalytic decomposition of hydrogen peroxide. Self-propelled detachment, induced by the coalescence of two bubbles, is observed at sizes much smaller than those determined by buoyancy. Upon coalescence, the released surface energy is partly dissipated by the bubble oscillations, working against viscous drag. The remaining energy is converted to the kinetic energy of the out-of-plane jumping motion of the merged bubble. The critical ratio of the parent bubble sizes for the jumping to occur is theoretically derived from an energy balance argument and found to be in agreement with the experimental results. The present results provide both physical insight for the bubble interactions and practical strategies for applications in chemical engineering and renewable energy technologies like electrolysis.

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars

Access to nanofabrication strategies for crafting three-dimensional plasmonic structures is limited. In this work, a fabrication strategy to produce 3D plasmonic hollow nanopillars (HNPs) using Talbot lithography and I-line photolithography is introduced. This method is named subtractive hybrid lithography (SHL), and permits intermixed usage of nano-and-macroscale patterns. Sputter-redeposition of gold (Au) on the SHL resist pattern yields large areas of dense periodic Au-HNPs. These Au-HNPs are arranged in a square unit cell with a 250 nm pitch. The carefully controlled fabrication process resulted in Au-HNPs with nanoscale dimensions over the Au-HNP dimensions such as an 80 ± 2 nm thick solid base with a 133 ± 4 nm diameter, and a 170 ± 10 nm high nano-rim with a 14 ± 3 nm sidewall rim-thickness. The plasmonic optical response is assessed with FDTD-modeling and reveals that the highest field enhancement is at the top of the hollow nanopillar rim. The modeled field enhancement factor (EF) is compared to the experimental analytical field enhancement factor, which shows to pair up with ca. 10³ < EF < 10⁴ and ca. 10³ < EF < 10⁵ for excitation wavelengths of 633 and 785 nm. From a broader perspective, our results can stimulate the use of Au-HNPs in the fields of plasmonic sensors and spectroscopy.

Fabrication of freestanding Pt nanowires for use as thermal anemometry probes in turbulence measurements

We report a robust fabrication method for patterning freestanding Pt nanowires for use as thermal anemometry probes for small-scale turbulence measurements. Using e-beam lithography, high aspect ratio Pt nanowires (~300 nm width, ~70 µm length, ~100 nm thickness) were patterned on the surface of oxidized silicon (Si) wafers. Combining wet etching processes with dry etching processes, these Pt nanowires were successfully released, rendering them freestanding between two silicon dioxide (SiO₂) beams supported on Si cantilevers. Moreover, the unique design of the bridge holding the device allowed gentle release of the device without damaging the Pt nanowires. The total fabrication time was minimized by restricting the use of e-beam lithography to the patterning of the Pt nanowires, while standard photolithography was employed for other parts of the devices. We demonstrate that the fabricated sensors are suitable for turbulence measurements when operated in constant-current mode. A robust calibration between the output voltage and the fluid velocity was established over the velocity range from 0.5 to 5 m s^-1 in a SF₆ atmosphere at a pressure of 2 bar and a temperature of 21 °C. The sensing signal from the nanowires showed negligible drift over a period of several hours. Moreover, we confirmed that the nanowires can withstand high dynamic pressures by testing them in air at room temperature for velocities up to 55 m s^-1.

Self-sustainable and recyclable ternary Au@Cu2O-Ag nanocomposites: application in ultrasensitive SERS detection and highly efficient photocatalysis of organic dyes under visible light

Ternary noble metal-semiconductor nanocomposites (NCs) with core-shell-satellite nanostructures have received widespread attention due to their outstanding performance in detecting pollutants through surface-enhanced Raman scattering (SERS) and photodegradation of organic pollutants. In this work, ternary Au@Cu2O-Ag NCs were designed and prepared by a galvanic replacement method. The effect of different amounts of Ag nanocrystals adsorbed on the surfaces of Au@Cu2O on the SERS activity was investigated based on the SERS detection of 4-mercaptobenzoic acid (4-MBA) reporter molecules. Based on electromagnetic field simulations and photoluminescence (PL) results, a possible SERS enhancement mechanism was proposed and discussed. Moreover, Au@Cu2O-Ag NCs served as SERS substrates, and highly sensitive SERS detection of malachite green (MG) with a detection limit as low as 10-9 M was achieved. In addition, Au@Cu2O-Ag NCs were recycled due to their superior self-cleaning ability and could catalyze the degradation of MG driven by visible light. This work demonstrates a wide range of possibilities for the integration of recyclable SERS detection and photodegradation of organic dyes and promotes the development of green testing techniques.

Fabrication of three-dimensional high-aspect-ratio structures by oblique-incidence Talbot lithography

Developing a suitable production method for three-dimensional periodic nanostructures with high aspect ratios is a subject of growing interest. For mass production, Talbot lithography offers many advantages. However, one disadvantage is that the minimum period of the light intensity distribution is limited by the period of the diffraction grating used. To enhance the aspect ratio of fabricated nanostructures, in the present study we focus on multiple wave interference between diffracted waves created using the Talbot effect. We propose a unique exposure method to generate multiple wave interference between adjacent diffraction orders by controlling the angle of incidence of an ultraviolet (UV) light source. Using finite-difference time-domain simulations, we obtain fringe patterns with a sub-wavelength period using a one-dimensional periodic grating mask. Moreover, we demonstrate the practical application of this approach by using UV lithography to fabricate sub-wavelength periodic photopolymer-based structures with an aspect ratio of 30 in millimeter-scale areas, indicating its suitability for mass production.

Recent Progress in Simple and Cost-Effective Top-Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

The development of a simple and cost-effective method for fabricating ≈10 nm scale nanopatterns over large areas is an important issue, owing to the performance enhancement such patterning brings to various applications including sensors, semiconductors, and flexible transparent electrodes. Although nanoimprinting, extreme ultraviolet, electron beams, and scanning probe litho-graphy are candidates for developing such nanopatterns, they are limited to complicated procedures with low throughput and high startup cost, which are difficult to use in various academic and industry fields. Recently, several easy and cost-effective lithographic approaches have been reported to produce ≈10 nm scale patterns without defects over large areas. This includes a method of reducing the size using the narrow edge of a pattern, which has been attracting attention for the past several decades. More recently, secondary sputtering lithography using an ion-bombardment technique was reported as a new method to create high-resolution and high-aspect-ratio structures. Recent progress in simple and cost-effective top-down lithography for ≈10 nm scale nanopatterns via edge and secondary sputtering techniques is reviewed. The principles, technical advances, and applications are demonstrated. Finally, the future direction of edge and secondary sputtering lithography research toward issues to be resolved to broaden applications is discussed.

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Hybrid metal-organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ∼10 nm or below. High-resolution resist patterning is integrally associated with the compatibility of the resist and irradiation of the exposure source. Helium ion beam lithography (HIBL) is an emerging approach for the realization of sub-10 nm patterns at considerably lower line edge/width roughness (LER/LWR) and higher sensitivity as compared to electron beam lithography (EBL). Here, for the first time, a negative tone resist incorporating nickel (Ni)-based metal-organic clusters (Ni-MOCs) was synthesized and patterned using HIBL and EBL at 30 keV. This resist comprises a nickel-based metal building unit covalently linked with the organic ligand: m-toluic acid (C₈H₈O₂). Dynamic light scattering confirmed a narrow size distribution of ∼2 nm for metal-organic cluster (MOC) formulations. High-resolution ∼9 nm HIBL line patterns were well developed at a sensitivity of 22 μC/cm² and at a significantly low LER and LWR of 1.81 ± 0.06 and 2.90 ± 0.06 nm, respectively. Analogous high-resolution patterns were also observed in EBL with a sensitivity of 473 μC/cm². Hence, the Ni-MOC-based resist investigated using HIBL and EBL elucidates the ability of its potential for the sub-10 nm technology node, under standard processing conditions.

Wafer-scale fabrication of high-quality tunable gold nanogap arrays for surface-enhanced Raman scattering

We report a robust and high-yield fabrication method for wafer-scale patterning of high-quality arrays of dense gold nanogaps, combining displacement Talbot lithography based shrink-etching with dry etching, wet etching, and thin film deposition techniques. By using the self-sharpening of <111>-oriented silicon crystal planes during the wet etching process, silicon structures with extremely smooth nanogaps are obtained. Subsequent conformal deposition of a silicon nitride layer and a gold layer results in dense arrays of narrow gold nanogaps. Using this method, we successfully fabricate high-quality Au nanogaps down to 10 nm over full wafer areas. Moreover, the gap spacing can be tuned by changing the thickness of deposited Au layers. Since the roughness of the template is minimized by the crystallographic etching of silicon, the roughness of the gold nanogaps depends almost exclusively on the roughness of the sputtered gold layers. Additionally, our fabricated Au nanogaps show a significant enhancement of surface-enhanced Raman scattering (SERS) signals of benzenethiol molecules chemisorbed on the structure surface, at an average enhancement factor up to 1.5 × 10⁶.

Postdeposition UV-Ozone Treatment: An Enabling Technique to Enhance the Direct Adhesion of Gold Thin Films to Oxidized Silicon

We found that continuous films of gold (Au) on oxidized silicon (SiO₂) substrates, upon treatment with ultraviolet (UV)-ozone, exhibit strong adhesion to the SiO₂ support. Importantly, the enhancement is independent of micro- or nanostructuring of such nanometer-thick films. Deposition of a second Au layer on top of the pretreated Au layer makes the adhesion stable for at least 5 months in environmental air. Using this treatment method enables us to large-scale fabricate various SiO₂-supported Au structures at various thicknesses with dimensions spanning from a few hundreds of nanometers to a few micrometers, without the use of additional adhesion layers. We explain the observed adhesion improvement as polarization-induced increased strength of Au^δ-Si^δ+ bonds at the Au-SiO₂ interface due to the formation of a gold oxide monolayer on the Au surface by the UV-ozone treatment. Our simple and enabling method thus provides opportunities for patterning Au micro/nanostructures on SiO₂ substrates without an intermediate metallic adhesion layer, which is critical for biosensing and nanophotonic applications.

Au-catalyzed desorption of GaAs oxides

Thermal desorption of native oxides on GaAs(100), (110) and (111)B surfaces around Au particles are studied in vacuum using in situ microspectroscopy. Two temperature-dependent desorption regimes, common to all surfaces, are identified. The low-temperature desorption regime spatially limited to the vicinity of some Au nanoparticles (NPs) is catalytically enhanced, resulting in oxide pinholes which expand laterally into macro holes many times the size of the catalyzing NPs and with shapes dictated by the underlying crystallography. The high-temperature desorption regime causes homogeneous oxides thinning and, ultimately, complete oxide desorption. The temperature difference between the two regimes is ∼25 °C-60 °C. After oxide desorption and depending on Au size and GaAs surface orientation, Au particles may dissolve the fresh GaAs surface and form mobile AuGa₂/Ga core/shell units, or form stationary AuGa₂ crystallites, or the catalyzing Au particles may run with minimal reaction with the GaAs surface. These results will add to the fundamental understanding of many Au-based nanofabrication processes, particularly the epitaxial growth of vertical and lateral nanowires.

Engulfment control of platinum nanoparticles into oxidized silicon substrates for fabrication of dense solid-state nanopore arrays

We found that platinum (Pt) nanoparticles, upon annealing at high temperature of 1000 °C, are engulfed into amorphous fused-silica or thermal oxide silicon substrates. The same phenomenon was previously published for gold (Au) nanoparticles. Similar to the Au nanoparticles, the engulfed Pt nanoparticles connect to the surface of the substrates through conical nanopores, and the size of the Pt nanoparticles decreases with increasing depth of the nanopores. We explain the phenomena as driven by the formation of platinum oxide by reaction of the platinum with atmospheric oxygen, with platinum oxide evaporating to the environment. We found that the use of Pt provides much better controllability than the use of Au. Due to the high vapor pressure of platinum oxide, the engulfment of the Pt nanoparticles into oxidized silicon (SiO₂) substrates is faster than of Au nanoparticles. At high temperature annealing we also find that the aggregation of Pt nanoparticles on the substrate surface is insignificant. As a result, the Pt nanoparticles are uniformly engulfed into the substrates, leading to an opportunity for patterning dense nanopore arrays. Moreover, the use of oxidized Si substrates enables us to precisely control the depth of the nanopores since the engulfment of Pt nanoparticles stops at a short distance above the SiO _x /Si interface. After subsequent etching steps, a membrane with dense nanopore through-holes with diameters down to sub-30 nm is obtained. With its simple operation and high controllability, this fabrication method provides an alternative for rapid patterning of dense arrays of solid-state nanopores at low-cost.

Displacement Talbot lithography for nano-engineering of III-nitride materials

Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D²TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D²TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

Scalable 3D Nanoparticle Trap for Electron Microscopy Analysis

Arrays of nanoscale pyramidal cages embedded in a silicon nitride membrane are fabricated with an order of magnitude miniaturization in the size of the cages compared to previous work. This becomes possible by combining the previously published wafer-scale corner lithography process with displacement Talbot lithography, including an additional resist etching step that allows the creation of masking dots with a size down to 50 nm, using a conventional 365 nm UV source. The resulting pyramidal cages have different entrance and exit openings, which allows trapping of nanoparticles within a predefined size range. The cages are arranged in a well-defined array, which guarantees traceability of individual particles during post-trapping analysis. Gold nanoparticles with a size of 25, 150, and 200 nm are used to demonstrate the trapping capability of the fabricated devices. The traceability of individual particles is demonstrated by transferring the transmission electron microscopy (TEM) transparent devices between scanning electron microscopy and TEM instruments and relocating a desired collection of particles.