1
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Dockx K, Barnes MD, Wehenkel DJ, van Rijn R, van der Zant HSJ, Buscema M. Strong doping reduction on wafer-scale CVD graphene devices via Al 2O 3ALD encapsulation. NANOTECHNOLOGY 2024; 35:395202. [PMID: 38955146 DOI: 10.1088/1361-6528/ad5dbb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2024] [Accepted: 07/02/2024] [Indexed: 07/04/2024]
Abstract
We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position,Vcnp, from around +47 V to between -5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.
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Affiliation(s)
- K Dockx
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - M D Barnes
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
| | - D J Wehenkel
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
| | - R van Rijn
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
| | - H S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - M Buscema
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
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2
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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3
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Das GS, Tripathi VK, Dwivedi J, Jangir LK, Tripathi KM. Nanocarbon-based sensors for the structural health monitoring of smart biocomposites. NANOSCALE 2024; 16:1490-1525. [PMID: 38186362 DOI: 10.1039/d3nr05522a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Structural health monitoring (SHM) is a critical aspect of ensuring the safety and durability of smart biocomposite materials used as multifunctional materials. Smart biocomposites are composed of renewable or biodegradable materials and have emerged as eco-friendly alternatives of traditional non-biodegradable glass fiber-based composite materials. Although biocomposites exhibit fascinating properties and many desirable traits, real-time and early stage SHM is the most challenging issue to enable their long-term use. Smart biocomposites are integrated with sensors for in situ identification of the progress of damage and composite failure. The sensitivity of such smart biocomposites is a key functionality, which can be tuned by the introduction of an appropriate filler. In particular, nanocarbons hold promising potential to be incorporated in SHM applications of biocomposites. This review focused on the potential applications of nanocarbons in SHM of biocomposites. The aspects related to fabrication techniques and working mechanism of sensors are comprehensively discussed. Furthermore, their unique mechanical and electrical properties and sustainable nature ensure seamless integration into biocomposites, allowing for real-time monitoring without compromising the material's properties. These sensors offer multi-parameter sensing capabilities, such as strain, pressure, humidity, temperature, and chemical exposure, allowing a comprehensive assessment of biocomposite health. Additionally, their durability and longevity in harsh conditions, along with wireless connectivity options, provide cost-effective and sustainable SHM solutions. As research in this field advances, ongoing efforts seek to enhance the sensitivity and selectivity of these sensors, optimizing their performance for real-world applications. This review highlights the significant advances, ongoing efforts to enhance the sensitivity and selectivity, and performance optimization of nanocarbon-based sensors along with their working mechanism in the field of SHM for smart biocomposites. The key challenges and future research perspectives facing the conversion of nanocarbons to smart biocomposites are also displayed.
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Affiliation(s)
- Gouri Sankar Das
- Department of Chemistry, Indian Institute of Petroleum and Energy, Visakhapatnam, Andhra Pradesh, 530003, India. kumud@
| | - Vijayendra Kumar Tripathi
- Department of Chemistry, Banasthali Vidyapith, Banasthali, Rajasthan-304022, India
- Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, UP, India
| | - Jaya Dwivedi
- Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, UP, India
| | - Lokesh Kumar Jangir
- Department of Chemistry, Indian Institute of Technology BHU, Varanasi-221005, India.
| | - Kumud Malika Tripathi
- Department of Chemistry, Indian Institute of Petroleum and Energy, Visakhapatnam, Andhra Pradesh, 530003, India. kumud@
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4
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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5
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Arshad MU, Gan Y, Wei C, Li J, Wu C, Naraghi M. Fracture Toughness Characteristics of Stacked Bilayer Graphene via Far-Field Displacement Measurements. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302499. [PMID: 37254463 DOI: 10.1002/smll.202302499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 05/07/2023] [Indexed: 06/01/2023]
Abstract
Mechanical properties of graphene, e.g., strength, modulus, and fracture toughness are extremely sensitive to flaws. Here the fracture properties of stacked bilayer graphene sheets (SBLG) are reported, obtained via stacking two individually grown graphene sheets. The SBLG is presented here as a building block for flaw-resilient nanomaterials. The fracture properties of freestanding SBLG sheets, suspended on transmission electron microscope (TEM) grids, are characterized by stretching the TEM grid inside an scanning electron microscope (SEM) chamber and monitoring the local displacements in real-time. The fracture toughness is measured and expressed as a function of the critical displacement required to propagate existing cracks in the experiment via computational models. This approach decouples force and displacements measurements, and utilizes the known elastic modulus along with the known displacement boundary conditions at the onset of crack growth to estimate the far field force and stress. This strategy represents a breakthrough in nanoscale fracture mechanics for statistical analysis and high throughput experimens on multiple samples at a time. Results demonstrate that the SBLG is markedly tougher than as-grown single or multilayer graphene, with a mode I fracture toughness of ≈28.06 ± 7.5 MPam $\sqrt m $ . The mechanisms leading to a higher toughness of SBLG are also analyzed and discussed.
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Affiliation(s)
- Muhammad Usama Arshad
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Yuxiang Gan
- Department of Civil, Environmental, and Architectural Engineering, Rolla, MO, 65409-0030, USA
| | - Congjie Wei
- Department of Civil, Environmental, and Architectural Engineering, Rolla, MO, 65409-0030, USA
| | - Jiaoli Li
- Department of Civil, Environmental, and Architectural Engineering, Rolla, MO, 65409-0030, USA
| | - Chenglin Wu
- Department of Civil, Environmental, and Architectural Engineering, Rolla, MO, 65409-0030, USA
| | - Mohammad Naraghi
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
- Department of Aerospace Engineering, Texas A&M University, College Station, TX, 77843, USA
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6
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Baglioni G, Pezone R, Vollebregt S, Cvetanović Zobenica K, Spasenović M, Todorović D, Liu H, Verbiest GJ, van der Zant HSJ, Steeneken PG. Ultra-sensitive graphene membranes for microphone applications. NANOSCALE 2023; 15:6343-6352. [PMID: 36916300 DOI: 10.1039/d2nr05147h] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Microphones exploit the motion of suspended membranes to detect sound waves. Since the microphone performance can be improved by reducing the thickness and mass of its sensing membrane, graphene-based microphones are expected to outperform state-of-the-art microelectromechanical (MEMS) microphones and allow further miniaturization of the device. Here, we present a laser vibrometry study of the acoustic response of suspended multilayer graphene membranes for microphone applications. We address performance parameters relevant for acoustic sensing, including mechanical sensitivity, limit of detection and nonlinear distortion, and discuss the trade-offs and limitations in the design of graphene microphones. We demonstrate superior mechanical sensitivities of the graphene membranes, reaching more than 2 orders of magnitude higher compliances than commercial MEMS devices, and report a limit of detection as low as 15 dBSPL, which is 10-15 dB lower than that featured by current MEMS microphones.
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Affiliation(s)
- Gabriele Baglioni
- Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands.
| | - Roberto Pezone
- Laboratory of Electronic Components, Technology and Materials, Delft University of Technology, The Netherlands
| | - Sten Vollebregt
- Laboratory of Electronic Components, Technology and Materials, Delft University of Technology, The Netherlands
| | - Katarina Cvetanović Zobenica
- Center for Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia
| | - Marko Spasenović
- Center for Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia
| | | | - Hanqing Liu
- Department of Precision and Microsystems Engineering, Delft University of Technology, The Netherlands
| | - Gerard J Verbiest
- Department of Precision and Microsystems Engineering, Delft University of Technology, The Netherlands
| | | | - Peter G Steeneken
- Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands.
- Department of Precision and Microsystems Engineering, Delft University of Technology, The Netherlands
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7
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Lee M, Renshof JR, van Zeggeren KJ, Houmes MJA, Lesne E, Šiškins M, van Thiel TC, Guis RH, van Blankenstein MR, Verbiest GJ, Caviglia AD, van der Zant HSJ, Steeneken PG. Ultrathin Piezoelectric Resonators Based on Graphene and Free-Standing Single-Crystal BaTiO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204630. [PMID: 36039705 DOI: 10.1002/adma.202204630] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Revised: 08/27/2022] [Indexed: 06/15/2023]
Abstract
Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of next-generation electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO3 (BTO), to create ultrathin piezoelectric resonators. It is demonstrated that the device can be brought into mechanical resonance by piezoelectric actuation. By sweeping the DC bias voltage on the top graphene electrode, the BTO membrane is switched between the two poled ferroelectric states. Remarkably, ferroelectric hysteresis is also observed in the resonance frequency, magnitude and Q-factor of the first membrane mode. In the bulk acoustic mode, the device vibrates at 233 GHz. This work demonstrates the potential of combining van der Waals materials with complex oxides for next-generation electronics, which not only opens up opportunities for increasing filter frequencies, but also enables reconfiguration by poling, via ferroelectric memory effect.
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Affiliation(s)
- Martin Lee
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Johannes R Renshof
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Kasper J van Zeggeren
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Maurits J A Houmes
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Makars Šiškins
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Thierry C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Ruben H Guis
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, Delft, 2628 CD, The Netherlands
| | - Mark R van Blankenstein
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Gerard J Verbiest
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, Delft, 2628 CD, The Netherlands
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
| | - Peter G Steeneken
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, Delft, 2628 CD, The Netherlands
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8
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Chen Y, Liu S, Hong G, Zou M, Liu B, Luo J, Wang Y. Nano-optomechanical Resonators for Sensitive Pressure Sensing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39211-39219. [PMID: 35994410 PMCID: PMC9438774 DOI: 10.1021/acsami.2c09865] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 08/02/2022] [Indexed: 06/14/2023]
Abstract
Nanomechanical sensors made from suspended graphene are sensitive to pressure changes. However, these devices typically function by obtaining an electrical signal based on the static displacement of a suspended graphene membrane and so, in practice, have limited sensitivity and operational range. The present work demonstrates an optomechanical Au/graphene membrane-based gas pressure sensor with ultrahigh sensitivity. This sensor comprises a suspended Au/graphene membrane appended to a section of hollow-core fiber to form a sealed Fabry-Pérot cavity. In contrast to conventional nanomechanical pressure sensors, pressure changes are monitored via resonant sensing with an optical readout. A miniature pressure sensor based on this principle was able to detect an ultrasmall pressure difference of 1 × 10-7 mbar in the ultrahigh-vacuum region with a pressure range of 4.1 × 10-5 to 8.3 × 10-6 mbar. Furthermore, this pressure sensor can work over an extended pressure range of 7 × 10-6 mbar to 1000 mbar at room temperature, outperforming commercial pressure sensors. Similar results were obtained using both the fundamental and higher-order resonant frequencies but with the latter providing improved sensitivity. This sensor has a wide range of potential applications, including indoor navigation, altitude monitoring, and motion detection.
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Affiliation(s)
- Yanping Chen
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Shen Liu
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Guiqing Hong
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Mengqiang Zou
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Bonan Liu
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Junxian Luo
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
| | - Yiping Wang
- Shenzhen
Key Laboratory of Photonic Devices and Sensing Systems for Internet
of Things, Guangdong and Hong Kong Joint Research Centre for Optical
Fiber Sensors, and Key Laboratory of Optoelectronic Devices and Systems
of the Ministry of Education and Guangdong Province, College of Physics
and Optoelectronic Engineering, Shenzhen
University, Shenzhen 518060, People’s Republic
of China
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9
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Pezone R, Baglioni G, Sarro PM, Steeneken PG, Vollebregt S. Sensitive Transfer-Free Wafer-Scale Graphene Microphones. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21705-21712. [PMID: 35475352 PMCID: PMC9100512 DOI: 10.1021/acsami.2c03305] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 04/12/2022] [Indexed: 06/14/2023]
Abstract
During the past decades micro-electromechanical microphones have largely taken over the market for portable devices, being produced in volumes of billions yearly. Because performance of current devices is near the physical limits, further miniaturization and improvement of microphones for mobile devices poses a major challenge that requires breakthrough device concepts, geometries, and materials. Graphene is an attractive material for enabling these breakthroughs due to its flexibility, strength, nanometer thinness, and high electrical conductivity. Here, we demonstrate that transfer-free 7 nm thick multilayer graphene (MLGr) membranes with diameters ranging from 85-155 to 300 μm can be used to detect sound and show a mechanical compliance up to 92 nm Pa-1, thus outperforming commercially available MEMS microphones of 950 μm with compliances around 3 nm Pa-1. The feasibility of realizing larger membranes with diameters of 300 μm and even higher compliances is shown, although these have lower yields. We present a process for locally growing graphene on a silicon wafer and realizing suspended membranes of patterned graphene across through-silicon holes by bulk micromachining and sacrificial layer etching, such that no transfer is required. This transfer-free method results in a 100% yield for membranes with diameters up to 155 μm on 132 fabricated drums. The device-to-device variations in the mechanical compliance in the audible range (20-20000 Hz) are significantly smaller than those in transferred membranes. With this work, we demonstrate a transfer-free method for realizing wafer-scale multilayer graphene membranes that is compatible with high-volume manufacturing. Thus, limitations of transfer-based methods for graphene microphone fabrication such as polymer contamination, crack formation, wrinkling, folding, delamination, and low-tension reproducibility are largely circumvented, setting a significant step on the route toward high-volume production of graphene microphones.
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Affiliation(s)
- Roberto Pezone
- Laboratory
of Electronic Components, Technology and Materials (ECTM), Department
of Microelectronics, Delft University of
Technology, 2628 CD Delft, The Netherlands
| | - Gabriele Baglioni
- Kavli
Institue of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology, 2628 CD Delft, The Netherlands
| | - Pasqualina M. Sarro
- Laboratory
of Electronic Components, Technology and Materials (ECTM), Department
of Microelectronics, Delft University of
Technology, 2628 CD Delft, The Netherlands
| | - Peter G. Steeneken
- Kavli
Institue of Nanoscience, Department of Quantum Nanoscience, Delft University of Technology, 2628 CD Delft, The Netherlands
- Department
of Precision and Microsystems Engineering (PME), Delft University of Technology, 2628 CD Delft, The Netherlands
| | - Sten Vollebregt
- Laboratory
of Electronic Components, Technology and Materials (ECTM), Department
of Microelectronics, Delft University of
Technology, 2628 CD Delft, The Netherlands
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10
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Lee M, Robin MP, Guis RH, Filippozzi U, Shin DH, van Thiel TC, Paardekooper SP, Renshof JR, van der Zant HSJ, Caviglia AD, Verbiest GJ, Steeneken PG. Self-Sealing Complex Oxide Resonators. NANO LETTERS 2022; 22:1475-1482. [PMID: 35119289 PMCID: PMC8880390 DOI: 10.1021/acs.nanolett.1c03498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface, necessitating additional sealing procedures. In this work, we demonstrate the use of free-standing complex oxides as self-sealing membranes that allow the reference cavity beneath to be sealed by a simple anneal. To test the hermeticity, we study the gas permeation time constants in nanomechanical resonators made from SrRuO3 and SrTiO3 membranes suspended over SiO2/Si cavities which show an improvement up to 4 orders of magnitude in the permeation time constant after annealing the devices. Similar devices fabricated on Si3N4/Si do not show such improvements, suggesting that the adhesion increase over SiO2 is mediated by oxygen bonds that are formed at the SiO2/complex oxide interface during the self-sealing anneal. Picosecond ultrasonics measurements confirm the improvement in the adhesion by 70% after annealing.
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Affiliation(s)
- Martin Lee
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Martin P. Robin
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
| | - Ruben H. Guis
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
| | - Ulderico Filippozzi
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Dong Hoon Shin
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Thierry C. van Thiel
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Stijn P. Paardekooper
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
| | - Johannes R. Renshof
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Herre S. J. van der Zant
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Andrea D. Caviglia
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Gerard J. Verbiest
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
| | - Peter G. Steeneken
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
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11
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Zhang X, Gu B, Qiu CW. Force measurement goes to femto-Newton sensitivity of single microscopic particle. LIGHT, SCIENCE & APPLICATIONS 2021; 10:243. [PMID: 34876551 PMCID: PMC8651730 DOI: 10.1038/s41377-021-00684-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Highly sensitive force measurements of a single microscopic particle with femto-Newton sensitivity have remained elusive owing to the existence of fundamental thermal noise. Now, researchers have proposed an optically controlled hydrodynamic manipulation method, which can measure the weak force of a single microscopic particle with femto-Newton sensitivity.
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Affiliation(s)
- Xiaohe Zhang
- Advanced Photonics Center, Southeast University, Nanjing, 210096, China
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Bing Gu
- Advanced Photonics Center, Southeast University, Nanjing, 210096, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
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12
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Dolleman R, Chakraborty D, Ladiges DR, van der Zant HSJ, Sader JE, Steeneken PG. Squeeze-Film Effect on Atomically Thin Resonators in the High-Pressure Limit. NANO LETTERS 2021; 21:7617-7624. [PMID: 34461013 PMCID: PMC8461654 DOI: 10.1021/acs.nanolett.1c02237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 08/23/2021] [Indexed: 06/13/2023]
Abstract
The resonance frequency of membranes depends on the gas pressure due to the squeeze-film effect, induced by the compression of a thin gas film that is trapped underneath the resonator by the high-frequency motion. This effect is particularly large in low-mass graphene membranes, which makes them promising candidates for pressure-sensing applications. Here, we study the squeeze-film effect in single-layer graphene resonators and find that their resonance frequency is lower than expected from models assuming ideal compression. To understand this deviation, we perform Boltzmann and continuum finite-element simulations and propose an improved model that includes the effects of gas leakage and can account for the observed pressure dependence of the resonance frequency. Thus, this work provides further understanding of the squeeze-film effect and provides further directions into optimizing the design of squeeze-film pressure sensors from 2D materials.
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Affiliation(s)
- Robin
J. Dolleman
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands
- ARC
Centre of Excellence in Exciton Science, School of Mathematics and
Statistics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Debadi Chakraborty
- ARC
Centre of Excellence in Exciton Science, School of Mathematics and
Statistics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Daniel R. Ladiges
- ARC
Centre of Excellence in Exciton Science, School of Mathematics and
Statistics, The University of Melbourne, Melbourne, Victoria 3010, Australia
- Center
for Computational Sciences and Engineering, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Herre S. J. van der Zant
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands
| | - John E. Sader
- ARC
Centre of Excellence in Exciton Science, School of Mathematics and
Statistics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Peter G. Steeneken
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands
- Department
of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
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13
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Zou M, Liao C, Liu S, Xiong C, Zhao C, Zhao J, Gan Z, Chen Y, Yang K, Liu D, Wang Y, Wang Y. Fiber-tip polymer clamped-beam probe for high-sensitivity nanoforce measurements. LIGHT, SCIENCE & APPLICATIONS 2021; 10:171. [PMID: 34453031 PMCID: PMC8397746 DOI: 10.1038/s41377-021-00611-9] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Revised: 07/26/2021] [Accepted: 08/07/2021] [Indexed: 05/31/2023]
Abstract
Micromanipulation and biological, material science, and medical applications often require to control or measure the forces asserted on small objects. Here, we demonstrate for the first time the microprinting of a novel fiber-tip-polymer clamped-beam probe micro-force sensor for the examination of biological samples. The proposed sensor consists of two bases, a clamped beam, and a force-sensing probe, which were developed using a femtosecond-laser-induced two-photon polymerization (TPP) technique. Based on the finite element method (FEM), the static performance of the structure was simulated to provide the basis for the structural design. A miniature all-fiber micro-force sensor of this type exhibited an ultrahigh force sensitivity of 1.51 nm μN-1, a detection limit of 54.9 nN, and an unambiguous sensor measurement range of ~2.9 mN. The Young's modulus of polydimethylsiloxane, a butterfly feeler, and human hair were successfully measured with the proposed sensor. To the best of our knowledge, this fiber sensor has the smallest force-detection limit in direct contact mode reported to date, comparable to that of an atomic force microscope (AFM). This approach opens new avenues towards the realization of small-footprint AFMs that could be easily adapted for use in outside specialized laboratories. As such, we believe that this device will be beneficial for high-precision biomedical and material science examination, and the proposed fabrication method provides a new route for the next generation of research on complex fiber-integrated polymer devices.
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Affiliation(s)
- Mengqiang Zou
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Changrui Liao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China.
| | - Shen Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Cong Xiong
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Cong Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Jinlai Zhao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Polymer Science and Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen, 518060, China
| | - Zongsong Gan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong, 518057, China
| | - Yanping Chen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Kaiming Yang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Dan Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Ying Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China
| | - Yiping Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/GuangDong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
- Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things, Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors, Shenzhen University, Shenzhen, 518060, China.
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