Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Electrical-Controllable Antiferromagnet-Based Tunnel Junction

An electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultradense and ultrastable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced toward this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of an interfacial exchange bias and exchange spring in IrMn. Encoding information states "0" and "1" is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring and exchange bias, a 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrically controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices^1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface¹ and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn₃Sn/MgO/Mn₃Sn (ref. ⁶). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn₃Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet⁷ can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets^8-10.

Spin homojunction with high interfacial transparency for efficient spin-charge conversion

High interfacial transparency is vital to achieve efficient spin-charge conversion for ideal spintronic devices with low energy consumption. However, in traditional ferromagnetic/nonmagnetic heterojunctions, the interfacial Rashba spin-orbit coupling brings about spin memory loss (SML) and two-magnon scattering (TMS), quenching spin current crossing the heterointerfaces. To address the intrinsic deficiency of heterointerface, we design a ferromagnetic FeRh/antiferromagnetic FeRh spin homojunction for efficient spin-charge conversion, verified by a high interfacial transparency of 0.75 and a high spin torque efficiency of 0.34 from spin pumping measurements. First-principles calculations demonstrate that the interfacial electric field of homojunction is two orders of magnitude smaller than that of traditional heterojunction, producing negligible interfacial spin-orbit coupling to drastically reduce SML and TMS. Our spin homojunction exhibits potential and enlightenment for future energy-efficient spintronic devices.

Efficient Tuning of the Spin-Orbit Torque via the Magnetic Phase Transition of FeRh

The understanding and control of the spin-orbit torque (SOT) are central to antiferromagnetic spintronics. Despite the fact that a giant SOT efficiency has been achieved in numerous materials, its efficient tuning in a given material has not been established. Materials with magnetic phase transitions (MPTs) offer a new perspective, as the SOT efficiency may vary significantly for the different magnetic orderings across the transition, and the transition itself can be readily tuned by various control parameters. This work reports that the SOT efficiency of a FeRh-based perpendicular magnetized heterostructure can be significantly tuned by varying the temperature across the MPT. The SOT efficiency exhibits a temperature hysteresis associated with the first-order nature of the MPT, and its value in the ferromagnetic phase is seen to be enhanced by ∼450%, simply by a lowering of temperature to drive FeRh into the antiferromagnetic phase. Furthermore, current-induced magnetization switching can be achieved without an assistant magnetic field for both ferromagnetic and antiferromagnetic FeRh, with a low critical switching current density for the latter. These results not only directly establish FeRh as an efficient spin generator but also present a strategy to dynamically tune SOT via varying the temperature across MPTs.

Current-induced Néel order switching facilitated by magnetic phase transition

Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-efficient manipulation has been a fundamental challenge in AFM systems. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 10⁶ A cm⁻² facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. By introducing a transient FM state via current-induced Joule heating, the spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density similar to ordinary FM materials. This mechanism is further verified by measuring the temperature and magnetic bias field dependences, where the X-ray magnetic linear dichroism (XMLD) results confirm the AFM switching besides the electrical transport measurement. Our findings demonstrate the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway towards pure AFM memory applications.

Electrical manipulation of antiferromagnetic order is crucial for future memory devices, but existing switching schemes require a large current density. Here, the authors achieve record low current density switching in FeRh by taking advantage of its antiferromagnetic to ferromagnetic phase transition.

Recent developments on the magnetic and electrical transport properties of FeRh- and Rh-based heterostructures

It is fascinating how the binary alloy FeRh has been the subject of a vast number of studies almost solely for a single-phase transition. This is, however, reasonable, considering how various degrees of freedom are intertwined around this phase transition. Furthermore, the tunability of this phase transition-the large response to tuning parameters, such as electric field and strain-endows FeRh huge potential in applications. Compared to the bulk counterpart, FeRh in the thin-film form is superior in many aspects: materials in thin-film form are often more technologically relevant in the first place; in addition, the substrates add extra dimensions to the tunability, especially when the substrate itself is multiferroic. Here we review recent developments on the magnetic and transport properties of heterostructures based on FeRh and its end-member Rh, with the latter providing a new route to exploiting spin-orbit interactions in functional spintronic heterostructures other than the more often employed 5dmetals. The methods utilized in the investigation of the physical properties in these systems, and the design principles employed in the engineering thereof may conceivably be extended to similar phase transitions to other magnetic materials.

Metal-containing organic compounds for memory and data storage applications

With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.

Controlling the Metamagnetic Phase Transition in FeRh/MnRh Superlattices and Thin-Film Fe50-xMnxRh50 Alloys

Equiatomic and chemically ordered FeRh and MnRh compounds feature a first-order metamagnetic phase transition between antiferromagnetic and ferromagnetic order in the vicinity of room temperature, exhibiting interconnected structural, magnetic, and electronic order parameters. We show that these two alloys can be combined to form hybrid metamagnets in the form of sputter-deposited superlattices and alloys on single-crystalline MgO substrates. Despite being structurally different, the magnetic behavior of the alloys with substantial Mn content resembles that of the FeRh/MnRh superlattices in the ultrathin individual layer limit. For FeRh/MnRh superlattices, dissimilar lattice distortions of the constituent FeRh and MnRh layers at the antiferromagnetic-ferromagnetic transition cause double-step transitions during cooling, while the magnetization during the heating branch shows a smooth, continuous trend. For Fe_50-xMn_xRh₅₀ alloy films, the substitution of Mn at the Fe sites introduces an effective tensile in-plane strain and magnetic frustration in the highly ordered epitaxial films, largely influencing the phase transition temperature T_M (by more than 150 K). In addition, Mn acts as a surfactant, enabling the growth of continuous thin films at higher temperatures. Thus, the introduction of hybrid FeRh-MnRh systems with adjustable parameters provides a pathway for the realization of tunable spintronic devices based on magnetic phase transitions.

Electric-field control of spin dynamics during magnetic phase transitions

Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics.

Solid-state synthesis, magnetic and structural properties of interfacial B2-FeRh(001) layers in Rh/Fe(001) films

Here we first report results of the start of the solid-state reaction at the Rh/Fe(001) interface and the structural and magnetic phase transformations in 52Rh/48Fe(001), 45Rh/55Fe(001), 68Rh/32Fe(001) bilayers from room temperature to 800 °C. For all bilayers the non-magnetic nanocrystalline phase with a B2 structure (nfm-B2) is the first phase that is formed on the Rh/Fe(001) interface near 100 °C. Above 300 °C, without changing the nanocrystalline B2 structure, the phase grows into the low-magnetization modification α_lʹ (M_S^l ~ 825 emu/cm³) of the ferromagnetic α^ʹ phase which has a reversible α_lʹ ↔ αʺ transition. After annealing 52Rh/48Fe(001) bilayers above 600 °C the α_lʹ phase increases in grain size and either develops into α_hʹ with high magnetization (M_S^h ~ 1,220 emu/cm³) or remains in the α_lʹ phase. In contrast to α_lʹ, the α_hʹ ↔ αʺ transition in the α_hʹ films is completely suppressed. When the annealing temperature of the 45Rh/55Fe(001) samples is increased from 450 to 800 °C the low-magnetization nanocrystalline α_lʹ films develop into high crystalline perfection epitaxial α_hʹ(001) layers, which have a high magnetization of ~ 1,275 emu/cm³. α_hʹ(001) films do not undergo a transition to an antiferromagnetic αʺ phase. In 68Rh/32Fe(001) samples above 500 °C non-magnetic epitaxial γ(001) layers grow on the Fe(001) interface as a result of the solid-state reaction between the epitaxial α_lʹ(001) and polycrystalline Rh films. Our results demonstrate not only the complex nature of chemical interactions at the low-temperature synthesis of the nfm-B2 and α_lʹ phases in Rh/Fe(001) bilayers, but also establish their continuous link with chemical mechanisms underlying reversible α_lʹ ↔ αʺ transitions.

Flexible Antiferromagnetic FeRh Tapes as Memory Elements

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.

Spin pumping during the antiferromagnetic-ferromagnetic phase transition of iron-rhodium

FeRh attracts intensive interest in antiferromagnetic (AFM) spintronics due to its first-order phase transition between the AFM and ferromagnetic (FM) phase, which is unique for exploring spin dynamics in coexisting phases. Here, we report lateral spin pumping by which angular momentum is transferred from FM domains into the AFM matrix during the phase transition of ultrathin FeRh films. In addition, FeRh is verified to be both an efficient spin generator and an efficient spin sink, by electrically probing vertical spin pumping from FM-FeRh into Pt and from Py into FeRh, respectively. A dramatic enhancement of damping related to AFM-FeRh is observed during the phase transition, which we prove to be dominated by lateral spin pumping across the FM/AFM interface. The discovery of lateral spin pumping provides insight into the spin dynamics of magnetic thin films with mixed-phases, and the significantly modulated damping advances its potential applications, such as ultrafast spintronics.

Iron–rhodium is a promising material for antiferromagnetic (AFM) spintronics applications. Here, the authors demonstrate a strong enhancement of damping during the ferromagnetic (FM) to AFM phase transition caused by lateral spin pumping from FM domains to the AFM matrix.

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators

We investigate the current-induced switching of the Néel order in NiO(001)/Pt heterostructures, which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^{7}  A/cm^{2}. The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Néel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn_{2}Au and CuMnAs, where fieldlike torques induced by the Edelstein effect drive the Néel switching, therefore resulting in an orthogonal alignment between the Néel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

Spin density wave instability in a ferromagnet

Due to its cooperative nature, magnetic ordering involves a complex interplay between spin, charge, and lattice degrees of freedom, which can lead to strong competition between magnetic states. Binary Fe₃Ga₄ is one such material that exhibits competing orders having a ferromagnetic (FM) ground state, an antiferromagnetic (AFM) behavior at intermediate temperatures, and a conspicuous re-entrance of the FM state at high temperature. Through a combination of neutron diffraction experiments and simulations, we have discovered that the AFM state is an incommensurate spin-density wave (ISDW) ordering generated by nesting in the spin polarized Fermi surface. These two magnetic states, FM and ISDW, are seldom observed in the same material without application of a polarizing magnetic field. To date, this unusual mechanism has never been observed and its elemental origins could have far reaching implications in many other magnetic systems that contain strong competition between these types of magnetic order. Furthermore, the competition between magnetic states results in a susceptibility to external perturbations allowing the magnetic transitions in Fe₃Ga₄ to be controlled via temperature, magnetic field, disorder, and pressure. Thus, Fe₃Ga₄ has potential for application in novel magnetic memory devices, such as the magnetic components of tunneling magnetoresistance spintronics devices.

How to manipulate magnetic states of antiferromagnets

Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently manipulate the magnetic state of an antiferromagnet is key to the development of antiferromagnetic spintronics. In this review, we introduce four main methods (magnetic, strain, electrical, and optical) to mediate the magnetic states and elaborate on intrinsic origins of different antiferromagnetic materials. Magnetic control includes a strong magnetic field, exchange bias, and field cooling, which are traditional and basic. Strain control involves the magnetic anisotropy effect or metamagnetic transition. Electrical control can be divided into two parts, electric field and electric current, both of which are convenient for practical applications. Optical control includes thermal and electronic excitation, an inertia-driven mechanism, and terahertz laser control, with the potential for ultrafast antiferromagnetic manipulation. This review sheds light on effective usage of antiferromagnets and provides a new perspective on antiferromagnetic spintronics.