1
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Xiang B, Wang R, Chen Y, Wang Y, Qin T, Zhang M, Watanabe K, Taniguchi T, Duan W, Tang P, Liu H, Xiong Q. Chirality-Dependent Dynamic Evolution for Trions in Monolayer WS 2. NANO LETTERS 2024; 24:6592-6600. [PMID: 38787539 DOI: 10.1021/acs.nanolett.4c01082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Monolayer transition metal dichalcogenides exhibit valley-dependent excitonic characters with a large binding energy, acting as the building block for future optoelectronic functionalities. Herein, combined with pump-probe ultrafast transient transmission spectroscopy and theoretical simulations, we reveal the chirality-dependent trion dynamics in h-BN encapsulated monolayer tungsten disulfide. By resonantly pumping trions in a single valley and monitoring their temporal evolution, we identify the temperature-dependent competition between two relaxation channels driven by chirality-dependent scattering processes. At room temperature, the phonon-assisted upconversion process predominates, converting excited trions to excitons within the same valley on a sub-picosecond (ps) time scale. As temperature decreases, this process becomes less efficient, while alternative channels, notably valley depolarization process for trions, assume importance, leading to an increase of trion density in the unpumped valley within a ps time scale. Our time-resolved valley-contrast results provide a comprehensive insight into trion dynamics in 2D materials, thereby advancing the development of novel valleytronic devices.
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Affiliation(s)
- Baixu Xiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Renqi Wang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
| | - Yuzhong Chen
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Yubin Wang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Tingxiao Qin
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Mengdi Zhang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing, 100084, P. R. China
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Haiyun Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
- Frontier Science Center for Quantum Information, Beijing, 100084, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, P.R. China
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2
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Zhang Z, Ghonge S, Ding Y, Zhang S, Berciu M, Schaller RD, Jankó B, Kuno M. Resonant Multiple-Phonon Absorption Causes Efficient Anti-Stokes Photoluminescence in CsPbBr 3 Nanocrystals. ACS NANO 2024; 18:6438-6444. [PMID: 38363716 DOI: 10.1021/acsnano.3c11908] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/18/2024]
Abstract
Lead halide perovskite nanocrystals, such as CsPbBr3, exhibit efficient photoluminescence (PL) up-conversion, also referred to as anti-Stokes photoluminescence (ASPL). This is a phenomenon where irradiating nanocrystals up to 100 meV below gap results in higher energy band edge emission. Most surprising is that ASPL efficiencies approach unity and involve single-photon interactions with multiple phonons. This is unexpected given the statistically disfavored nature of multiple-phonon absorption. Here, we report and rationalize near-unity anti-Stokes photoluminescence efficiencies in CsPbBr3 nanocrystals and attribute them to resonant multiple-phonon absorption by polarons. The theory explains paradoxically large efficiencies for intrinsically disfavored, multiple-phonon-assisted ASPL in nanocrystals. Moreover, the developed microscopic mechanism has immediate and important implications for applications of ASPL toward condensed phase optical refrigeration.
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Affiliation(s)
- Zhuoming Zhang
- Department of Chemistry and Biochemistry, University of Notre Dame, 251 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
| | - Sushrut Ghonge
- Department of Physics and Astronomy, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
| | - Yang Ding
- Department of Chemistry and Biochemistry, University of Notre Dame, 251 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
| | - Shubin Zhang
- Department of Physics and Astronomy, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
| | - Mona Berciu
- Department of Physics and Astronomy, University of British Columbia, Vancouver Campus 325-6224, Agricultural Road, Vancouver, BC V6T 1Z1, Canada
- Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Richard D Schaller
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Boldizsár Jankó
- Department of Physics and Astronomy, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
| | - Masaru Kuno
- Department of Chemistry and Biochemistry, University of Notre Dame, 251 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
- Department of Physics and Astronomy, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, Indiana 46556, United States
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3
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Roy S, Yang X, Gao J. Biaxial strain tuned upconversion photoluminescence of monolayer WS 2. Sci Rep 2024; 14:3860. [PMID: 38360891 PMCID: PMC10869839 DOI: 10.1038/s41598-024-54185-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 02/09/2024] [Indexed: 02/17/2024] Open
Abstract
Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from - 303 to - 120 meV. The measured power dependence of UPL from 1L-WS2 under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.
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Affiliation(s)
- Shrawan Roy
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Xiaodong Yang
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
| | - Jie Gao
- Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA.
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4
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Zhang Y, Du W, Liu X. Photophysics and its application in photon upconversion. NANOSCALE 2024; 16:2747-2764. [PMID: 38250819 DOI: 10.1039/d3nr05450k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interaction, where the energy of the emitted photons is higher than that of the incident photons. PL upconversion has promising applications in optoelectronic devices, displays, photovoltaics, imaging, diagnosis and treatment. In this review, we summarize the mechanism of PL upconversion and ultrafast PL physical processes. In particular, we highlight the advances in laser cooling, biological imaging, volumetric displays and photonics.
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Affiliation(s)
- Yutong Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, China
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5
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Yagodkin D, Kumar A, Ankerhold E, Richter J, Watanabe K, Taniguchi T, Gahl C, Bolotin KI. Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent. NANO LETTERS 2023; 23:9212-9218. [PMID: 37788809 PMCID: PMC10603811 DOI: 10.1021/acs.nanolett.3c01708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 08/15/2023] [Indexed: 10/05/2023]
Abstract
Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional time-resolved spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond time scale after the excitation. As a proof of principle, we extract the interlayer exciton formation time of 0.4 ps at 160 μJ/cm2 fluence in a MoS2/MoSe2 heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches.
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Affiliation(s)
- Denis Yagodkin
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Abhijeet Kumar
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Elias Ankerhold
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Johanna Richter
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cornelius Gahl
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
| | - Kirill I. Bolotin
- Department
of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany
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6
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Jadczak J, Debus J, Olejnik J, Ho CH, Watanabe K, Taniguchi T, Bryja L. Biexciton and Singlet Trion Upconvert Exciton Photoluminescence in a MoSe 2 Monolayer Supported by Acoustic and Optical K-Valley Phonons. J Phys Chem Lett 2023; 14:8702-8708. [PMID: 37733953 PMCID: PMC10561254 DOI: 10.1021/acs.jpclett.3c01982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 09/18/2023] [Indexed: 09/23/2023]
Abstract
Transition metal dichalcogenide monolayers represent unique platforms for studying both electronic and phononic interactions as well as intra- and intervalley exciton complexes. Here, we investigate the upconversion of exciton photoluminescence in MoSe2 monolayers. Within the nominal transparency window of MoSe2 the exciton emission is enhanced for resonantly addressing the spin-singlet negative trion and neutral biexciton at a few tens of meV below the neutral exciton transition. We identify that the A'1 optical phonon at the K valley provides the energy gain in the upconversion process at the trion resonance, while ZA(K) phonons with their spin- and valley-switching properties support the biexciton driven upconversion of the exciton emission. Interestingly, the latter upconversion process yields unpolarized exciton photoluminescence, while the former also leads to circularly polarized emission. Our study highlights high-order exciton complexes interacting with optical and acoustic K-valley phonons and upconverting light into the bright exciton.
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Affiliation(s)
- Joanna Jadczak
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Joerg Debus
- Department
of Physics, TU Dortmund University, 44227 Dortmund, Germany
| | - Justyna Olejnik
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Ching-Hwa Ho
- Graduate
Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Kenji Watanabe
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Leszek Bryja
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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7
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Wu B, Wang A, Fu J, Zhang Y, Yang C, Gong Y, Jiang C, Long M, Zhou G, Yue S, Ma W, Liu X. Uncovering the mechanisms of efficient upconversion in two-dimensional perovskites with anti-Stokes shift up to 220 meV. SCIENCE ADVANCES 2023; 9:eadi9347. [PMID: 37774031 PMCID: PMC10541006 DOI: 10.1126/sciadv.adi9347] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Accepted: 08/30/2023] [Indexed: 10/01/2023]
Abstract
Phonon-assisted photon upconversion holds great potential for numerous applications, e.g., optical refrigeration. However, traditional semiconductors face energy gain limitations due to thermal energy, typically achieving only ~25 milli-electron volts at room temperature. Here, we demonstrate that quasi-two-dimensional perovskites, with a soft hybrid organic-inorganic lattice, can efficiently upconvert photons with an anti-Stokes shift exceeding 200 milli-electron volts. By using microscopic transient absorption measurements and density functional theory calculations, we explicate that the giant energy gain stems from strong lattice fluctuation leading to a picosecond timescale transient band energy renormalization with a large energy variation of around ±180 milli-electron volts at room temperature. The motion of organic molecules drives the deformation of inorganic framework, providing energy and local states necessary for efficient upconversion within a time constant of around 1 ps. These results establish a deep understanding of perovskite-based photon upconversion and offer previously unknown insights into the development of various upconversion applications.
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Affiliation(s)
- Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P.R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Aocheng Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Jing Fu
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, P.R. China
| | - Yutong Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Cheng Yang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P.R. China
| | - Yiyang Gong
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P.R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Mingzhu Long
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P.R. China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P.R. China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, P.R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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8
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Mueller NS, Arul R, Kang G, Saunders AP, Johnson AC, Sánchez-Iglesias A, Hu S, Jakob LA, Bar-David J, de Nijs B, Liz-Marzán LM, Liu F, Baumberg JJ. Photoluminescence upconversion in monolayer WSe 2 activated by plasmonic cavities through resonant excitation of dark excitons. Nat Commun 2023; 14:5726. [PMID: 37714855 PMCID: PMC10504321 DOI: 10.1038/s41467-023-41401-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 09/04/2023] [Indexed: 09/17/2023] Open
Abstract
Anti-Stokes photoluminescence (PL) is light emission at a higher photon energy than the excitation, with applications in optical cooling, bioimaging, lasing, and quantum optics. Here, we show how plasmonic nano-cavities activate anti-Stokes PL in WSe2 monolayers through resonant excitation of a dark exciton at room temperature. The optical near-fields of the plasmonic cavities excite the out-of-plane transition dipole of the dark exciton, leading to light emission from the bright exciton at higher energy. Through statistical measurements on hundreds of plasmonic cavities, we show that coupling to the dark exciton leads to a near hundred-fold enhancement of the upconverted PL intensity. This is further corroborated by experiments in which the laser excitation wavelength is tuned across the dark exciton. We show that a precise nanoparticle geometry is key for a consistent enhancement, with decahedral nanoparticle shapes providing an efficient PL upconversion. Finally, we demonstrate a selective and reversible switching of the upconverted PL via electrochemical gating. Our work introduces the dark exciton as an excitation channel for anti-Stokes PL in WSe2 and paves the way for large-area substrates providing nanoscale optical cooling, anti-Stokes lasing, and radiative engineering of excitons.
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Affiliation(s)
- Niclas S Mueller
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK.
- Fritz Haber Institute of the Max Planck Society, 14195, Berlin, Germany.
| | - Rakesh Arul
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Gyeongwon Kang
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
- Department of Chemistry, Kangwon National University, Chuncheon, 24341, South Korea
| | - Ashley P Saunders
- Department of Chemistry, Stanford University, Stanford, CA, 94305, USA
| | - Amalya C Johnson
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Ana Sánchez-Iglesias
- CIC biomaGUNE, Basque Research and Technology Alliance (BRTA), Paseo de Miramón 194, Donostia-San Sebastián, 20014, Spain
- Centro de Física de Materiales, CSIC-UPV/EHU, Manuel Lardizabal Ibilbidea 5, Donostia-San Sebastián, 20018, Spain
| | - Shu Hu
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Lukas A Jakob
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Jonathan Bar-David
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Bart de Nijs
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Luis M Liz-Marzán
- CIC biomaGUNE, Basque Research and Technology Alliance (BRTA), Paseo de Miramón 194, Donostia-San Sebastián, 20014, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48009, Spain
- Centro de Investigación Biomédica en Red, Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Donostia-San Sebastián, 20014, Spain
| | - Fang Liu
- Department of Chemistry, Stanford University, Stanford, CA, 94305, USA
| | - Jeremy J Baumberg
- NanoPhotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK.
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9
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Cheng Y, Liang F, Lu D, Feng J, Zhang G, Yu H, Zhang H, Wu Y. Phonon engineering in Yb:La 2CaB 10O 19 crystal for extended lasing beyond the fluorescence spectrum. LIGHT, SCIENCE & APPLICATIONS 2023; 12:203. [PMID: 37626023 PMCID: PMC10457375 DOI: 10.1038/s41377-023-01243-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Revised: 07/17/2023] [Accepted: 07/23/2023] [Indexed: 08/27/2023]
Abstract
Since the first invention of the laser in 1960, direct lasing outside the fluorescence spectrum is deemed impossible owing to the "zero-gain" cross-section. However, when electron-phonon coupling meets laser oscillation, an energy modulation by the quantized phonon can tailor the electronic transitions, thus directly creating some unprecedented lasers with extended wavelengths by phonon engineering. Here, we demonstrate a broadband lasing (1000-1280 nm) in a Yb-doped La2CaB10O19 (Yb:LCB) crystal, far beyond its spontaneous fluorescence spectrum. Numerical calculations and in situ Raman verify that such a substantial laser emission is devoted to the multiphonon coupling to lattice vibrations of a dangling "quasi-free-oxygen" site, with the increasing phonon numbers step-by-step (n = 1-6). This new structural motif provides more alternative candidates with strong-coupling laser materials. Moreover, the quantitative relations between phonon density distribution and laser wavelength extension are discussed. These results give rise to the search for on-demand lasers in the darkness and pave a reliable guideline to study those intriguing electron-phonon-photon coupled systems for integrated photonic applications.
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Affiliation(s)
- Yanling Cheng
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Dazhi Lu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Jingcheng Feng
- Key Lab Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guochun Zhang
- Key Lab Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
| | - Yicheng Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
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10
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Meng F, Yang X, Gao J. Phonon-assisted upconversion photoluminescence of monolayer MoS 2 at elevated temperatures. OPTICS EXPRESS 2023; 31:28437-28443. [PMID: 37710897 DOI: 10.1364/oe.495824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 08/03/2023] [Indexed: 09/16/2023]
Abstract
Upconversion photoluminescence (UPL) lies at the heart of optical refrigeration and energy harvesting. Monolayer transition metal dichalcogenides (TMDCs) have been identified as an excellent platform with robust phonon-exciton coupling for studying the phonon-assisted UPL process. Herein, we investigate the multiphonon-assisted UPL emission in monolayer MoS2 at elevated temperatures and the temperature-dependent phonon contributions in the UPL process. When temperature goes up from 295 K to 460 K, the enhancement of the integrated UPL intensity is demonstrated due to the increased phonon population and the reduced phonon numbers involved in the UPL process. Our findings reveal the underlying mechanism of phonon-assisted UPL at high temperatures, and pave the way for the applications of photon upconversion in display, nanoscale thermometry, anti-Stokes energy harvesting, and optical refrigeration.
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11
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Dai Y, Qi P, Tao G, Yao G, Shi B, Liu Z, Liu Z, He X, Peng P, Dang Z, Zheng L, Zhang T, Gong Y, Guan Y, Liu K, Fang Z. Phonon-assisted upconversion in twisted two-dimensional semiconductors. LIGHT, SCIENCE & APPLICATIONS 2023; 12:6. [PMID: 36588111 PMCID: PMC9806105 DOI: 10.1038/s41377-022-01051-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 11/22/2022] [Accepted: 11/27/2022] [Indexed: 06/17/2023]
Abstract
Phonon-assisted photon upconversion (UPC) is an anti-Stokes process in which incident photons achieve higher energy emission by absorbing phonons. This letter studies phonon-assisted UPC in twisted 2D semiconductors, in which an inverted contrast between UPC and conventional photoluminescence (PL) of WSe2 twisted bilayer is emergent. A 4-fold UPC enhancement is achieved in 5.5° twisted bilayer while PL weakens by half. Reduced interlayer exciton conversion efficiency driven by lattice relaxation, along with enhanced pump efficiency resulting from spectral redshift, lead to the rotation-angle-dependent UPC enhancement. The counterintuitive phenomenon provides a novel insight into a unique way that twisted angle affects UPC and light-matter interactions in 2D semiconductors. Furthermore, the UPC enhancement platform with various superimposable means offers an effective method for lighting bilayers and expanding the application prospect of 2D stacked van der Waals devices.
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Affiliation(s)
- Yuchen Dai
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Pengfei Qi
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
- Institute of Modern Optics, Nankai University, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, 300350, Tianjin, China
| | - Guangyi Tao
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
- Photonics Research Center, School of Physics, MOE Key Lab of Weak-Light Nonlinear Photonics, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300071, Tianjin, China
| | - Guangjie Yao
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Beibei Shi
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Zhixin Liu
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Zhengchang Liu
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Xiao He
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Pu Peng
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Zhibo Dang
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Liheng Zheng
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Tianhao Zhang
- Photonics Research Center, School of Physics, MOE Key Lab of Weak-Light Nonlinear Photonics, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300071, Tianjin, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, 100191, Beijing, China
| | - Yan Guan
- Center for Physicochemical Analysis and Measurements in ICCAS, Analytical Instrumentation Center, Peking University, 100871, Beijing, China
| | - Kaihui Liu
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
| | - Zheyu Fang
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China.
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12
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Peña Román RJ, Bretel R, Pommier D, Parra López LE, Lorchat E, Boer-Duchemin E, Dujardin G, Borisov AG, Zagonel LF, Schull G, Berciaud S, Le Moal E. Tip-Induced and Electrical Control of the Photoluminescence Yield of Monolayer WS 2. NANO LETTERS 2022; 22:9244-9251. [PMID: 36458911 DOI: 10.1021/acs.nanolett.2c02142] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The photoluminescence (PL) of monolayer tungsten disulfide (WS2) is locally and electrically controlled using the nonplasmonic tip and tunneling current of a scanning tunneling microscope (STM). The spatial and spectral distribution of the emitted light is determined using an optical microscope. When the STM tip is engaged, short-range PL quenching due to near-field electromagnetic effects is present, independent of the sign and value of the bias voltage applied to the tip-sample tunneling junction. In addition, a bias-voltage-dependent long-range PL quenching is measured when the sample is positively biased. We explain these observations by considering the native n-doping of monolayer WS2 and the charge carrier density gradients induced by electron tunneling in micrometer-scale areas around the tip position. The combination of wide-field PL microscopy and charge carrier injection using an STM opens up new ways to explore the interplay between excitons and charge carriers in two-dimensional semiconductors.
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Affiliation(s)
- Ricardo Javier Peña Román
- Institute of Physics "Gleb Wataghin", Department of Applied Physics, State University of Campinas-UNICAMP, 13083-859 Campinas, Brazil
| | - Rémi Bretel
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Delphine Pommier
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Luis Enrique Parra López
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Etienne Lorchat
- Physics & Informatics (PHI) Laboratories, NTT Research, Inc., Sunnyvale, California 94085, United States
| | - Elizabeth Boer-Duchemin
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Gérald Dujardin
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Andrei G Borisov
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
| | - Luiz Fernando Zagonel
- Institute of Physics "Gleb Wataghin", Department of Applied Physics, State University of Campinas-UNICAMP, 13083-859 Campinas, Brazil
| | - Guillaume Schull
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Stéphane Berciaud
- Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Eric Le Moal
- Institut des Sciences Moléculaires d'Orsay, Université Paris-Saclay, CNRS, 91405, Orsay, France
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13
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Mushtaq A, Yang X, Gao J. Unveiling room temperature upconversion photoluminescence in monolayer WSe 2. OPTICS EXPRESS 2022; 30:45212-45220. [PMID: 36522928 DOI: 10.1364/oe.471027] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
Upconversion photoluminescence (UPL) is a phenomenon describing an anti-Stokes process where the emitted photons have higher energy than the absorbed incident photons. Transition metal dichalcogenides (TMDCs) with strong photon-exciton interactions represent a fascinating platform for studying the anti-Stokes UPL process down to the monolayer thickness limit. Herein, we demonstrate room-temperature UPL emission in monolayer WSe2 with broadband near-infrared excitation. The measured excitation power dependence of UPL intensity at various upconversion energy gains unveils two distinguished upconversion mechanisms, including the one-photon involved multiphonon-assisted UPL process and the two-photon absorption (TPA) induced UPL process. In the phonon-assisted UPL regime, the observed exponential decay of UPL intensity with the increased energy gain is attributed to the decreased phonon population. Furthermore, valley polarization properties of UPL emission with circular polarization excitation is investigated. The demonstrated results will advance future photon upconversion applications based on monolayer TMDCs such as night vision, semiconductor laser cooling, and bioimaging.
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14
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Żuberek E, Majak M, Lubczyński J, Debus J, Watanabe K, Taniguchi T, Ho CH, Bryja L, Jadczak J. Upconversion photoluminescence excitation reveals exciton-trion and exciton-biexciton coupling in hBN/WS[Formula: see text]/hBN van der Waals heterostructures. Sci Rep 2022; 12:13699. [PMID: 35953508 PMCID: PMC9372078 DOI: 10.1038/s41598-022-18104-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 08/05/2022] [Indexed: 11/10/2022] Open
Abstract
Monolayers of transition-metal dichalcogenides with direct band gap located at the binary [Formula: see text] points of the Brillouin zone are promising materials for applications in opto- and spin-electronics due to strongly enhanced Coulomb interactions and specific spin-valley properties. They furthermore represent a unique platform to study electron-electron and electron-phonon interactions in diverse exciton complexes. Here, we demonstrate processes in which the neutral biexciton and two negative trions, namely the spin-triplet and spin-singlet trions, upconvert light into a bright intravalley exciton in an hBN-encapsulated WS[Formula: see text] monolayer. We propose that the energy gains required in the polarized upconversion photoluminescence originate from different interactions including resonant optical phonons, a cooling of resident electrons and a non-local and an anisotropic electron-hole exchange, respectively. The temperature dependence (7-120 K) of the excitonic upconversion intensity obtained at excitation energies corresponding to the biexciton and trions provides insight into an increasing phonon population as well as a thermally enhanced electron scattering. Our study sheds new light on the understanding of excitonic spin and valley properties of van der Waals heterostructures and improves the understanding of photonic upconversion mechanisms in two-dimensional quantum materials.
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Affiliation(s)
- Ewa Żuberek
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Martyna Majak
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Jakub Lubczyński
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Joerg Debus
- Department of Physics, TU Dortmund University, 44227 Dortmund, Germany
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 Japan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106 Taiwan
| | - Leszek Bryja
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Joanna Jadczak
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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15
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Das S, Gupta G, Chatterjee S, Watanabe K, Taniguchi T, Majumdar K. Highly Nonlinear Biexcitonic Photocurrent from Ultrafast Interlayer Charge Transfer. ACS NANO 2022; 16:9728-9735. [PMID: 35604012 DOI: 10.1021/acsnano.2c03397] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Strong Coulomb interactions in monolayer semiconductors allow them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection─an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS2 heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a time scale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift interlayer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers toward viable optoelectronic applications.
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Affiliation(s)
- Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Suman Chatterjee
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-044 Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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16
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Qi P, Dai Y, Luo Y, Tao G, Zheng L, Liu D, Zhang T, Zhou J, Shen B, Lin F, Liu Z, Fang Z. Giant excitonic upconverted emission from two-dimensional semiconductor in doubly resonant plasmonic nanocavity. LIGHT, SCIENCE & APPLICATIONS 2022; 11:176. [PMID: 35688809 PMCID: PMC9187628 DOI: 10.1038/s41377-022-00860-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 05/03/2022] [Accepted: 05/21/2022] [Indexed: 05/17/2023]
Abstract
Phonon-assisted upconverted emission is the heart of energy harvesting, bioimaging, optical cryptography, and optical refrigeration. It has been demonstrated that emerging two-dimensional (2D) semiconductors can provide an excellent platform for efficient phonon-assisted upconversion due to the enhanced optical transition strength and phonon-exciton interaction of 2D excitons. However, there is little research on the further enhancement of excitonic upconverted emission in 2D semiconductors. Here, we report the enhanced multiphoton upconverted emission of 2D excitons in doubly resonant plasmonic nanocavities. Owing to the enhanced light collection, enhanced excitation rate, and quantum efficiency enhancement arising from the Purcell effect, an upconverted emission amplification of >1000-fold and a decrease of 2~3 orders of magnitude in the saturated excitation power are achieved. These findings pave the way for the development of excitonic upconversion lasing, nanoscopic thermometry, and sensing, revealing the possibility of optical refrigeration in future 2D electronic or excitonic devices.
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Grants
- National Key Research and Development Program of China (grant nos. 2020YFA0211300, 2017YFA0205700, 2017YFA0206000, and 2019YFA0210203), National Science Foundation of China (grant nos. 12027807, 11674012, 61521004, 21790364, 61422501, and 11374023), Beijing Natural Science Foundation (grant nos. Z180011 and L140007), Foundation for the Author of National Excellent Doctoral Dissertation of PR China (grant no. 201420), National Program for Support of Top-notch Young Professionals (grant no. W02070003), High-performance Computing Platform of Peking University, and Project funded by China Postdoctoral Science Foundation (2019M660283).
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Affiliation(s)
- Pengfei Qi
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
- Institute of Modern Optics, Nankai University, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, Tianjin, 300350, China
| | - Yuchen Dai
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Yang Luo
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Guangyi Tao
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
- Photonics Research Center, School of Physics, MOE Key Lab of Weak-Light Nonlinear Photonics, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, Tianjin, 300071, China
| | - Liheng Zheng
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Donglin Liu
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Tianhao Zhang
- Photonics Research Center, School of Physics, MOE Key Lab of Weak-Light Nonlinear Photonics, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, Tianjin, 300071, China
| | - Jiadong Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Shen
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Feng Lin
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China
| | - Zheng Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheyu Fang
- School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, China.
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17
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Bieniek M, Sadecka K, Szulakowska L, Hawrylak P. Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1582. [PMID: 35564291 PMCID: PMC9104105 DOI: 10.3390/nano12091582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 04/24/2022] [Accepted: 04/26/2022] [Indexed: 02/01/2023]
Abstract
Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS2, representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron-electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe-Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.
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Affiliation(s)
- Maciej Bieniek
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (K.S.); (L.S.); (P.H.)
- Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
- Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany
| | - Katarzyna Sadecka
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (K.S.); (L.S.); (P.H.)
- Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Ludmiła Szulakowska
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (K.S.); (L.S.); (P.H.)
| | - Paweł Hawrylak
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (K.S.); (L.S.); (P.H.)
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18
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Sun X, Qin F, Huang J, Zhou L, Li Z, Bi X, Ao L, Duan S, Cheng F, Qiu C, Lu Y, Lu H, Gou H, Yuan H. Emergent Fabry-Pérot Interference for Light-Matter Interaction in van der Waals WS 2/SiP 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7464-7470. [PMID: 35099944 DOI: 10.1021/acsami.1c22768] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Fabry-Pérot interference plays an important role in modulating the spectral intensity of optical response originating from light-matter interactions. Examples of such interference occurring in the substrate as the resonating cavity have been demonstrated and probed by two-dimensional layered materials. Similarly, the Fabry-Pérot interference can occur and modulate the optical response in the heterostructure; however, this remains elusive. Herein, we observe the Fabry-Pérot interference on photoluminescence (PL) and Raman spectra in monolayer WS2/SiP2 heterostructures by varying the thickness of bottom SiP2 from 2 to 193 nm, which serves as the Fabry-Pérot cavity. Both the intensities of the PL spectra and the E2g1 Raman mode of WS2/SiP2 heterostructures first decrease to almost zero while displaying an interference increase at a SiP2 thickness of 75 nm. Our findings clearly demonstrate the Fabry-Pérot interference in the optical response of heterostructures, providing crucial information to optimize the optical response and paving the way toward photodetector applications.
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Affiliation(s)
- Xiaojun Sun
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Feng Qin
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Junwei Huang
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Ling Zhou
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Zeya Li
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Xiangyu Bi
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Lingyi Ao
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Siyu Duan
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Fanghua Cheng
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Caiyu Qiu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Yangfan Lu
- College of Materials Science and Engineering, National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing 400030, China
| | - Hong Lu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Hongtao Yuan
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
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19
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Jadczak J, Glazov M, Kutrowska-Girzycka J, Schindler JJ, Debus J, Ho CH, Watanabe K, Taniguchi T, Bayer M, Bryja L. Upconversion of Light into Bright Intravalley Excitons via Dark Intervalley Excitons in hBN-Encapsulated WSe 2 Monolayers. ACS NANO 2021; 15:19165-19174. [PMID: 34735768 PMCID: PMC8717626 DOI: 10.1021/acsnano.1c08286] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 10/29/2021] [Indexed: 05/19/2023]
Abstract
Semiconducting monolayers of transition-metal dichalcogenides are outstanding platforms to study both electronic and phononic interactions as well as intra- and intervalley excitons and trions. These excitonic complexes are optically either active (bright) or inactive (dark) due to selection rules from spin or momentum conservation. Exploring ways of brightening dark excitons and trions has strongly been pursued in semiconductor physics. Here, we report on a mechanism in which a dark intervalley exciton upconverts light into a bright intravalley exciton in hBN-encapsulated WSe2 monolayers. Excitation spectra of upconverted photoluminescence reveals resonances at energies 34.5 and 46.0 meV below the neutral exciton in the nominal WSe2 transparency range. The required energy gains are theoretically explained by cooling of resident electrons or by exciton scattering with Λ- or K-valley phonons. Accordingly, an elevated temperature and a moderate concentration of resident electrons are necessary for observing the upconversion resonances. The interaction process observed between the inter- and intravalley excitons elucidates the importance of dark excitons for the optics of two-dimensional materials.
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Affiliation(s)
- Joanna Jadczak
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
- (J.J.)
| | | | - Joanna Kutrowska-Girzycka
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | | | - Joerg Debus
- Experimental
Physics 2, TU Dortmund University, 44227 Dortmund, Germany
| | - Ching-Hwa Ho
- Graduate
Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Kenji Watanabe
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Manfred Bayer
- Experimental
Physics 2, TU Dortmund University, 44227 Dortmund, Germany
| | - Leszek Bryja
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
- (L.B.)
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20
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The helicity of Raman scattered light: principles and applications in two-dimensional materials. Sci China Chem 2021. [DOI: 10.1007/s11426-021-1119-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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21
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Nutting D, Prando GA, Severijnen M, Barcelos ID, Guo S, Christianen PCM, Zeitler U, Galvão Gobato Y, Withers F. Electrical and optical properties of transition metal dichalcogenides on talc dielectrics. NANOSCALE 2021; 13:15853-15858. [PMID: 34518845 DOI: 10.1039/d1nr04723j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices.
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Affiliation(s)
- Darren Nutting
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK.
| | - Gabriela A Prando
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK.
- Physics Department, Federal University of São Carlos, São Carlos, Brazil.
| | - Marion Severijnen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Ingrid D Barcelos
- Brazilian Synchrotron Light Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, Brazil
| | - Shi Guo
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK.
| | - Peter C M Christianen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Uli Zeitler
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Yara Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, Brazil.
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Freddie Withers
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK.
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22
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Debnath R, Sett S, Biswas R, Raghunathan V, Ghosh A. A simple fabrication strategy for orientationally accurate twisted heterostructures. NANOTECHNOLOGY 2021; 32:455705. [PMID: 34298522 DOI: 10.1088/1361-6528/ac1756] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Accepted: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals (vdW) heterostructure is a type of metamaterial where multiple layers of 2D materials are vertically aligned at controlled misorientation. The relative rotation in between the adjacent layers, or the twist angle between them plays a crucial role in changing the electronic band structure of the superlattice. The assembly of multi-layers of precisely twisted two dimensional layered materials requires knowledge of the atomic structure at the edge of the flake. It may be artificially created by the 'tear and stack' process. Otherwise, the crystallographic orientation needs to be determined through invasive processes such as transmission electron microscopy or scanning tunneling microscopy, and via second-harmonic generation (SHG). Here, we demonstrate a simple and elegant transfer protocol using only an optical microscope as a edge identifier tool through which, controlled transfer of twisted homobilayer and heterobilayer transition metal dichalcogenides is performed with close to 100% yield. The fabricated twisted vdW heterostructures have been characterized by SHG, Raman spectroscopy and photoluminiscence spectroscopy, confirming the desired twist angle within ∼0.5° accuracy. The presented method is reliable, quick and prevents the use of invasive tools which is desirable for reproducible device functionalities.
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Affiliation(s)
- Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Rabindra Biswas
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Varun Raghunathan
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
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23
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Ye Z, Lin X, Wang N, Zhou J, Zhu M, Qin H, Peng X. Phonon-assisted up-conversion photoluminescence of quantum dots. Nat Commun 2021; 12:4283. [PMID: 34257296 PMCID: PMC8277828 DOI: 10.1038/s41467-021-24560-4] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Accepted: 06/16/2021] [Indexed: 12/04/2022] Open
Abstract
Phonon-assisted up-conversion photoluminescence can boost energy of an emission photon to be higher than that of the excitation photon by absorbing vibration energy (or phonons) of the emitter. Here, up-conversion photoluminescence power-conversion efficiency (power ratio between the emission and excitation photons) for CdSe/CdS core/shell quantum dots is observed to be beyond unity. Instead of commonly known defect-assisted up-conversion photoluminescence for colloidal quantum dots, temperature-dependent measurements and single-dot spectroscopy reveal the up-conversion photoluminescence and conventional down-conversion photoluminescence share the same electron-phonon coupled electronic states. Ultrafast spectroscopy results imply the thermalized excitons for up-conversion photoluminescence form within 200 fs, which is 100,000 times faster than the radiative recombination rate of the exciton. Results suggest that colloidal quantum dots can be exploited as efficient, stable, and cost-effective emitters for up-conversion photoluminescence in various applications. Up-conversion photoluminescence in colloidal quantum dots is generally believed to be mediated by thermal activation from defect states. Here, the authors reveal that highly-efficient up-conversion photoluminescence instead is related to electron-phonon coupling.
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Affiliation(s)
- Zikang Ye
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Xing Lin
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China.,College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Na Wang
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Jianhai Zhou
- Najing Technology Corporation LTD, Hangzhou, 310056, China
| | - Meiyi Zhu
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Haiyan Qin
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China.
| | - Xiaogang Peng
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China.
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24
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Wang Q, Wee ATS. Photoluminescence upconversion of 2D materials and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:223001. [PMID: 33784662 DOI: 10.1088/1361-648x/abf37f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.
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Affiliation(s)
- Qixing Wang
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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25
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Zinkiewicz M, Woźniak T, Kazimierczuk T, Kapuscinski P, Oreszczuk K, Grzeszczyk M, Bartoš M, Nogajewski K, Watanabe K, Taniguchi T, Faugeras C, Kossacki P, Potemski M, Babiński A, Molas MR. Excitonic Complexes in n-Doped WS 2 Monolayer. NANO LETTERS 2021; 21:2519-2525. [PMID: 33683895 PMCID: PMC7995249 DOI: 10.1021/acs.nanolett.0c05021] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 02/22/2021] [Indexed: 05/25/2023]
Abstract
We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of n-doped WS2 monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically inactive complexes. The semidark trions and negative biexcitons are distinguished. On the basis of their experimentally extracted and theoretically calculated g-factors, we identify three distinct families of emissions due to exciton complexes in WS2: bright, intravalley, and intervalley dark. The g-factors of the spin-split subbands in both the conduction and valence bands are also determined.
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Affiliation(s)
- Małgorzata Zinkiewicz
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Tomasz Woźniak
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Tomasz Kazimierczuk
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Piotr Kapuscinski
- Laboratoire
National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland
| | - Kacper Oreszczuk
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Magdalena Grzeszczyk
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Miroslav Bartoš
- Laboratoire
National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
656/123, 612 00 Brno, Czech Republic
| | - Karol Nogajewski
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Clement Faugeras
- Laboratoire
National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
| | - Piotr Kossacki
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Marek Potemski
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
- Laboratoire
National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
| | - Adam Babiński
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Maciej R. Molas
- Institute
of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
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26
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Jadczak J, Kutrowska-Girzycka J, Bieniek M, Kazimierczuk T, Kossacki P, Schindler JJ, Debus J, Watanabe K, Taniguchi T, Ho CH, Wójs A, Hawrylak P, Bryja L. Probing negatively charged and neutral excitons in MoS 2/hBN and hBN/MoS 2/hBN van der Waals heterostructures. NANOTECHNOLOGY 2021; 32:145717. [PMID: 33463532 DOI: 10.1088/1361-6528/abd507] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High-quality van der Waals heterostructures assembled from hBN-encapsulated monolayer transition metal dichalcogenides enable observations of subtle optical and spin-valley properties whose identification was beyond the reach of structures exfoliated directly on standard SiO2/Si substrates. Here, we describe different van der Waals heterostructures based on uncapped single-layer MoS2 stacked onto hBN layers of different thicknesses and hBN-encapsulated monolayers. Depending on the doping level, they reveal the fine structure of excitonic complexes, i.e. neutral and charged excitons. In the emission spectra of a particular MoS2/hBN heterostructure without an hBN cap we resolve two trion peaks, T1 and T2, energetically split by about 10 meV, resembling the pair of singlet and triplet trion peaks (T S and T T ) in tungsten-based materials. The existence of these trion features suggests that monolayer MoS2 has a dark excitonic ground state, despite having a 'bright' single-particle arrangement of spin-polarized conduction bands. In addition, we show that the effective excitonic g-factor significantly depends on the electron concentration and reaches the lowest value of -2.47 for hBN-encapsulated structures, which reveals a nearly neutral doping regime. In the uncapped MoS2 structures, the excitonic g-factor varies from -1.15 to -1.39 depending on the thickness of the bottom hBN layer and decreases as a function of rising temperature.
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Affiliation(s)
- J Jadczak
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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27
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Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe 2/hBN Heterostructures by Photoluminescence Excitation Experiments. MATERIALS 2021; 14:ma14020399. [PMID: 33467435 PMCID: PMC7830124 DOI: 10.3390/ma14020399] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Revised: 01/10/2021] [Accepted: 01/11/2021] [Indexed: 11/17/2022]
Abstract
Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.
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28
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Zinkiewicz M, Slobodeniuk AO, Kazimierczuk T, Kapuściński P, Oreszczuk K, Grzeszczyk M, Bartos M, Nogajewski K, Watanabe K, Taniguchi T, Faugeras C, Kossacki P, Potemski M, Babiński A, Molas MR. Neutral and charged dark excitons in monolayer WS 2. NANOSCALE 2020; 12:18153-18159. [PMID: 32853305 DOI: 10.1039/d0nr04243a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS2 encapsulated in hexagonal BN (hBN). We find that this system is an n-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe2, we identify the Coulomb exchange interaction coupled neutral dark and grey excitons through their polarization properties, while an analogous effect is not observed for dark trions. Applying the magnetic field in both perpendicular and parallel configurations with respect to the monolayer plane, we determine the g-factor of dark trions to be g ∼ -8.6. Their decay rate is close to 0.5 ns, more than 2 orders of magnitude longer than that of bright excitons.
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Affiliation(s)
- M Zinkiewicz
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - A O Slobodeniuk
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, Praha 2 CZ-121 16, Czech Republic
| | - T Kazimierczuk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - P Kapuściński
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France and Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - K Oreszczuk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - M Grzeszczyk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - M Bartos
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France and Central European Institute of Technology, Brno University of Technology, Purkyňova 656/123, 612 00 Brno, Czech Republic
| | - K Nogajewski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - C Faugeras
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
| | - P Kossacki
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - M Potemski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland. and Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
| | - A Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
| | - M R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
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29
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Kapuściński P, Vaclavkova D, Grzeszczyk M, Slobodeniuk AO, Nogajewski K, Bartos M, Watanabe K, Taniguchi T, Faugeras C, Babiński A, Potemski M, Molas MR. Valley polarization of singlet and triplet trions in a WS2 monolayer in magnetic fields. Phys Chem Chem Phys 2020; 22:19155-19161. [DOI: 10.1039/d0cp02737e] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Magnetic field induced valley polarization of carriers is substantially different for the absorption and emission response of a WS2 monolayer.
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30
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Wang Q, Zhang Q, Zhao X, Zheng YJ, Wang J, Luo X, Dan J, Zhu R, Liang Q, Zhang L, Wong PKJ, He X, Huang YL, Wang X, Pennycook SJ, Eda G, Wee ATS. High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors. NANO LETTERS 2019; 19:5595-5603. [PMID: 31241969 DOI: 10.1021/acs.nanolett.9b02136] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Photodetectors usually operate in the wavelength range with photon energy above the bandgap of channel semiconductors so that incident photons can excite electrons from valence band to conduction band to generate photocurrent. Here, however, we show that monolayer WS2 photodetectors can detect photons with energy even lying 219 meV below the bandgap of WS2 at room temperature. With the increase of excitation wavelength from 620 to 680 nm, photoresponsivity varies from 551 to 59 mA/W. This anomalous phenomenon is ascribed to energy upconversion, which is a combination effect of one-photon excitation and multiphonon absorption through an intermediate state created most likely by sulfur divacancy with oxygen adsorption. These findings will arouse research interests on other upconversion optoelectronic devices, photovoltaic devices, for example, of monolayer transition metal dichalcogenides (TMDCs).
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Affiliation(s)
- Qixing Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Qi Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Yu Jie Zheng
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems , CQU-NUS Renewable Energy Materials and Devices Joint Laboratory , Chongqing 400044 , China
- School of Energy and Power Engineering , Chongqing University , Chongqing 400044 , China
| | - Junyong Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 12 510275 , Guangdong , People's Republic of China
| | - Jiadong Dan
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Rui Zhu
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Qijie Liang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
| | - Lei Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - P K Johnny Wong
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Xiaoyue He
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Yu Li Huang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Xinyun Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Stephen J Pennycook
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Goki Eda
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Andrew T S Wee
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
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31
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Pommier D, Bretel R, López LEP, Fabre F, Mayne A, Boer-Duchemin E, Dujardin G, Schull G, Berciaud S, Le Moal E. Scanning Tunneling Microscope-Induced Excitonic Luminescence of a Two-Dimensional Semiconductor. PHYSICAL REVIEW LETTERS 2019; 123:027402. [PMID: 31386496 DOI: 10.1103/physrevlett.123.027402] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2018] [Indexed: 05/24/2023]
Abstract
The long sought-after goal of locally and spectroscopically probing the excitons of two-dimensional (2D) semiconductors is attained using a scanning tunneling microscope (STM). Excitonic luminescence from monolayer molybdenum diselenide (MoSe_{2}) on a transparent conducting substrate is electrically excited in the tunnel junction of an STM under ambient conditions. By comparing the results with photoluminescence measurements, the emission mechanism is identified as the radiative recombination of bright A excitons. STM-induced luminescence is observed at bias voltages as low as those that correspond to the energy of the optical band gap of MoSe_{2}. The proposed excitation mechanism is resonance energy transfer from the tunneling current to the excitons in the semiconductor, i.e., through virtual photon coupling. Additional mechanisms (e.g., charge injection) may come into play at bias voltages that are higher than the electronic band gap. Photon emission quantum efficiencies of up to 10^{-7} photons per electron are obtained, despite the lack of any participating plasmons. Our results demonstrate a new technique for investigating the excitonic and optoelectronic properties of 2D semiconductors and their heterostructures at the nanometer scale.
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Affiliation(s)
- Delphine Pommier
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - Rémi Bretel
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - Luis E Parra López
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Florentin Fabre
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Andrew Mayne
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - Elizabeth Boer-Duchemin
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - Gérald Dujardin
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
| | - Guillaume Schull
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Stéphane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Eric Le Moal
- Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France
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Tamulewicz M, Kutrowska-Girzycka J, Gajewski K, Serafińczuk J, Sierakowski A, Jadczak J, Bryja L, Gotszalk TP. Layer number dependence of the work function and optical properties of single and few layers MoS 2: effect of substrate. NANOTECHNOLOGY 2019; 30:245708. [PMID: 30836333 DOI: 10.1088/1361-6528/ab0caf] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
We have examined the influence of flake-substrate effects that affect one and few layers of MoS2 in terms of their electrical and optical properties. In the measurements, we used SiO2/Si substrates with etched cavities and aluminum electrodes. Suspended areas are easily identifiable both on images depicting the topography and on the surface potential maps measured with the Kelvin probe force microscopy. Compared to the SiO2/Si supported material, surface potential decrease is observable at the membrane. The surface potential value of the flakes located on the electrodes is the lowest. PL measurements prove that single MoS2 monolayer was obtained. Suspended regions are also correlated with maps obtained as a result of Raman spectroscopy.
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Affiliation(s)
- Magdalena Tamulewicz
- Faculty of the Microsystems Electronics and Photonics, Wroclaw University of Science and Technology, Wroclaw, Poland
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