1
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Wang Z, Kalathingal V, Trushin M, Liu J, Wang J, Guo Y, Özyilmaz B, Nijhuis CA, Eda G. Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions. NATURE NANOTECHNOLOGY 2024; 19:993-999. [PMID: 38641642 DOI: 10.1038/s41565-024-01650-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 03/13/2024] [Indexed: 04/21/2024]
Abstract
Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a ~2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10-6 S) and low power density regime (<102 W cm-2), defying explanation through existing proposed mechanisms. By examining the scaling relationship between plasmonic and excitonic emission intensities, we elucidate the role of inelastic electron tunnelling dipoles that induce optically forbidden transitions in the few-layer graphene electrode and ultrafast hot carrier transfer across the van der Waals interface.
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Affiliation(s)
- Zhe Wang
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Vijith Kalathingal
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Department of Physics, Kannur University, Swami Anandatheertha Campus-Payyanur, Kannur, India
| | - Maxim Trushin
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Material Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Jiawei Liu
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yongxin Guo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Barbaros Özyilmaz
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Material Science and Engineering, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Christian A Nijhuis
- Hybrid Materials for Opto-Electronics Group, Department of Molecules and Materials, MESA+ Institute for Nanotechnology, Molecules Center and Center for Brain-Inspired Nano Systems, Faculty of Science and Technology, University of Twente, Enschede, the Netherlands.
| | - Goki Eda
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
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2
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Wang JP, Chen X, Zhao Q, Fang Y, Liu Q, Fu J, Liu Y, Xu X, Zhang J, Zhen L, Xu CY, Huang F, Meixner AJ, Zhang D, Gou G, Li Y. Out-of-plane Emission Dipole of Second Harmonic Generation in Odd- and Even-layered vdWs Janus Nb 3SeI 7. ACS NANO 2024; 18:16274-16284. [PMID: 38867607 DOI: 10.1021/acsnano.4c02854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Integration of atomically thin nonlinear optical (NLO) devices demands an out-of-plane (OP) emission dipole of second harmonic generation (SHG) to enhance the spontaneous emission for nanophotonics. However, the research on van der Waals (vdWs) materials with an OP emission dipole of SHG is still in its infancy. Here, by coupling back focal plane (BFP) imaging with numerical simulations and density functional theory (DFT) calculations, we demonstrate that vdWs Janus Nb3SeI7, ranging from bulk to the monolayer limit, exhibits a dominant OP emission dipole of SHG owing to the breaking of the OP symmetry. Explicitly, even-layered Nb3SeI7 with C6v symmetry is predicted to exhibit a pure OP emission dipole attributed to the only second-order susceptibility coefficient χzxx. Meanwhile, although odd-layered Nb3SeI7 with C3v symmetry has both OP and IP dipole components (χzxx and χyyy), the value of χzxx is 1 order of magnitude greater than that of χyyy, leading to an approximate OP emission dipole of SHG. Moreover, the crystal symmetry and OP emission dipole can be preserved under hydrostatic pressure, accompanied by the enhanced χzxx and the resulting 3-fold increase in SHG intensity. The reported stable OP dipole in 2D vdWs Nb3SeI7 can facilitate the rapid development of chip-integrated NLO devices.
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Affiliation(s)
- Jia-Peng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xinfeng Chen
- Frontier Institute of Science and Technology & State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi' an 710049, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an 710199, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050, China
| | - Quan Liu
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Jierui Fu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xinlong Xu
- School of Physics, Northwest University, Xi'an 710069, China
| | - Jia Zhang
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology Shenzhen, Shenzhen 518055, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050, China
| | - Alfred J Meixner
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Dai Zhang
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Gaoyang Gou
- Frontier Institute of Science and Technology & State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi' an 710049, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
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3
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Li C, Luo H, Hou L, Wang Q, Liu K, Gan X, Zhao J, Xiao F. Giant Photoluminescence Enhancement of Monolayer WSe 2 Using a Plasmonic Nanocavity with On-Demand Resonance. NANO LETTERS 2024; 24:5879-5885. [PMID: 38652056 DOI: 10.1021/acs.nanolett.4c01260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Monolayer transition metal dichalcogenides (TMDs) are considered promising building blocks for next-generation photonic and optoelectronic devices, owing to their fascinating optical properties. However, their inherent weak light absorption and low quantum yield severely hinder their practical applications. Here, we report up to 18000-fold photoluminescence (PL) enhancement in a monolayer WSe2-coupled plasmonic nanocavity. A spectroscopy-assisted nanomanipulation technique enables the assembly of a nanocavity with customizable resonances to simultaneously enhance the excitation and emission processes. In particular, precise control over the magnetic cavity mode facilitates spectral and spatial overlap with the exciton, resulting in plasmon-exciton intermediate coupling that approaches the maximum emission rate in the hybrid system. Meanwhile, the cavity mode exhibits high radiation directivity, which overwhelmingly directs surface-normal PL emission and leads to a 17-fold increase in the collection efficiency. Our approach opens up a new avenue to enhance the PL intensity of monolayer TMDs, facilitating their implementation in highly efficient optoelectronic devices.
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Affiliation(s)
- Chenyang Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Huan Luo
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Liping Hou
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Qifa Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Centre of Quantum Matter, School of Physics, Peking University, Beijing 100871, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Fajun Xiao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
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Xu K, Zou Z, Li W, Zhang L, Ge M, Wang T, Du W. Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity. NANO LETTERS 2024; 24:3647-3653. [PMID: 38488282 DOI: 10.1021/acs.nanolett.3c04899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
With exceptional quantum confinement, 2D monolayer semiconductors support a strong excitonic effect, making them an ideal platform for exploring light-matter interactions and as building blocks for novel optoelectronic devices. Different from the well-known in-plane excitons in transition metal dichalcogenides (TMD), the out-of-plane excitons in indium selenide (InSe) usually show weak emission, which limits their applications as light sources. Here, by embedding InSe in an anisotropic gap plasmon nanocavity, we have realized plasmon-enhanced linearly polarized photoluminescence with an anisotropic ratio up to ∼140, corresponding to degree of polarization (DoP) of ∼98.6%. Such polarization selectivity, originating from the polarization-dependent plasmonic enhancement supported by the "nanowire-on-mirror" nanocavity, can be well tuned by the InSe thickness. Moreover, we have also realized an InSe-based light-emitting diode with polarized electroluminescence. Our research highlights the role of excitonic dipole orientation in designing nanophotonic devices and paves the way for developing InSe-based optoelectronic devices with polarization control.
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Affiliation(s)
- Kai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Zhen Zou
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Lan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Maowen Ge
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
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5
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Wang R, Liu Q, Dai S, Liu CM, Liu Y, Sun ZY, Li H, Zhang CJ, Wang H, Xu CY, Shao WZ, Meixner AJ, Zhang D, Li Y, Zhen L. Defect Emission and Its Dipole Orientation in Layered Ternary Znln 2 S 4 Semiconductor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305658. [PMID: 37798674 DOI: 10.1002/smll.202305658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2023] [Revised: 09/08/2023] [Indexed: 10/07/2023]
Abstract
Defect engineering is promising to tailor the physical properties of 2D semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln2 S4 is thoroughly studied via versatile spectroscopic tools in combination with theoretical calculations. It is demonstrated that the Zn-In antistructural defects induce the formation of a series of donor and acceptor energy levels and sulfur vacancies induce donor energy levels, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair in Znln2 S4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (Ef ). Furthermore, the layer-dependent dipole orientation of defect emission in Znln2 S4 is directly revealed by back focal plane imagining, where it presents obviously in-plane dipole orientation within a dozen-layer thickness of Znln2 S4 . These unique features of defects in Znln2 S4 including extrinsic absorption, rich recombination paths, gate tunability, and in-plane dipole orientation are definitely a benefit to the advanced orientation-functional optoelectronic applications.
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Affiliation(s)
- Rui Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Quan Liu
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, 72076, Tübingen, Germany
| | - Sheng Dai
- School of Physical Science and Technology, Center for Transformative Science, ShanghaiTech University, Shanghai, 201210, China
| | - Chao-Ming Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, Harbin, 150001, China
| | - Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Zhao-Yuan Sun
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Chang-Jin Zhang
- Chinese Academy of Sciences Hefei Institutes of Physical Science, High Magnetic Field Laboratory of Anhui Province, Hefei, 230031, China
| | - Han Wang
- School of Physical Science and Technology, Center for Transformative Science, ShanghaiTech University, Shanghai, 201210, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Wen-Zhu Shao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Alfred J Meixner
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, 72076, Tübingen, Germany
| | - Dai Zhang
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, 72076, Tübingen, Germany
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
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6
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LaGasse SW, Proscia NV, Cress CD, Fonseca JJ, Cunningham PD, Janzen E, Edgar JH, Pennachio DJ, Culbertson J, Zalalutdinov M, Robinson JT. Hexagonal Boron Nitride Slab Waveguides for Enhanced Spectroscopy of Encapsulated 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309777. [PMID: 37992676 DOI: 10.1002/adma.202309777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 11/08/2023] [Indexed: 11/24/2023]
Abstract
The layered insulator hexagonal boron nitride (hBN) is a critical substrate that brings out the exceptional intrinsic properties of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). In this work, the authors demonstrate how hBN slabs tuned to the correct thickness act as optical waveguides, enabling direct optical coupling of light emission from encapsulated layers into waveguide modes. Molybdenum selenide (MoSe2 ) and tungsten selenide (WSe2 ) are integrated within hBN-based waveguides and demonstrate direct coupling of photoluminescence emitted by in-plane and out-of-plane transition dipoles (bright and dark excitons) to slab waveguide modes. Fourier plane imaging of waveguided photoluminescence from MoSe2 demonstrates that dry etched hBN edges are an effective out-coupler of waveguided light without the need for oil-immersion optics. Gated photoluminescence of WSe2 demonstrates the ability of hBN waveguides to collect light emitted by out-of-plane dark excitons.Numerical simulations explore the parameters of dipole placement and slab thickness, elucidating the critical design parameters and serving as a guide for novel devices implementing hBN slab waveguides. The results provide a direct route for waveguide-based interrogation of layered materials, as well as a way to integrate layered materials into future photonic devices at arbitrary positions whilst maintaining their intrinsic properties.
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Affiliation(s)
- Samuel W LaGasse
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Nicholas V Proscia
- NRC Postdoctoral Fellow residing at the US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Cory D Cress
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jose J Fonseca
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Paul D Cunningham
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Eli Janzen
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - James H Edgar
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Daniel J Pennachio
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - James Culbertson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Maxim Zalalutdinov
- Acoustics Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jeremy T Robinson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
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7
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Lee SH, Kim TJ, Lee E, Kwon D, Kim J, Joo J. Observation of aligned dipoles and angular chromism of exciplexes in organic molecular heterostructures. Nat Commun 2023; 14:7190. [PMID: 37938244 PMCID: PMC10632441 DOI: 10.1038/s41467-023-42976-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
The dipole characteristics of Frenkel excitons and charge-transfer excitons between donor and acceptor molecules in organic heterostructures such as exciplexes are important in organic photonics and optoelectronics. For the bilayer of the organic donor 4,4',4''-tris[(3-methylphenyl)phenylamino]triphenylamine and acceptor 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine molecules, the exciplexes form aligned dipoles perpendicular to the Frenkel excitons, as observed in back focal plane photoluminescence images. The angular chromism of exciplexes observed in the 100 meV range indicates possible delocalization and angle-sensing photonic applications. The blue shift of the peak position and increase in the linewidth of photoluminescene spectra with increasing excitation power are caused by the repulsive aligned exciplex dipole moments with a long lifetime (4.65 μs). Electroluminescence spectra of the exciplex from organic light-emitting diodes using the bilayer are blue-shifted with increasing bias, suggesting unidirectional alignment of the exciplex dipole moments. The observation of exciplex dipole moment alignments across molecular interfaces can facilitate the controlled coupling of exciton species and increase efficiency of organic light-emitting diodes.
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Affiliation(s)
- Sang-Hun Lee
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Taek Joon Kim
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Eunji Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dayeong Kwon
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea.
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8
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Yuan G, Higginbotham HF, Han J, Yadav A, Kirkwood N, Mulvaney P, Bell TDM, Cole JH, Funston AM. Tuning the Photoluminescence Anisotropy of Semiconductor Nanocrystals. ACS NANO 2023; 17:19109-19120. [PMID: 37748102 DOI: 10.1021/acsnano.3c05214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
Semiconductor nanocrystals are promising optoelectronic materials. Understanding their anisotropic photoluminescence is fundamental for developing quantum-dot-based devices such as light-emitting diodes, solar cells, and polarized single-photon sources. In this study, we experimentally and theoretically investigate the photoluminescence anisotropy of CdSe semiconductor nanocrystals with various shapes, including plates, rods, and spheres, with either wurtzite or zincblende structures. We use defocused wide-field microscopy to visualize the emission dipole orientation and find that spheres, rods, and plates exhibit the optical properties of 2D, 1D, and 2D emission dipoles, respectively. We rationalize the seemingly counterintuitive observation that despite having similar aspect ratios (width/length), rods and long nanoplatelets exhibit different defocused emission patterns by considering valence band structures calculated using multiband effective mass theory and the dielectric effect. The principles are extended to provide general relationships that can be used to tune the emission dipole orientation for different materials, crystalline structures, and shapes.
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Affiliation(s)
- Gangcheng Yuan
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
- School of Chemistry, Monash University, Clayton, Victoria 3800, Australia
| | | | - Jiho Han
- ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Anchal Yadav
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
- School of Chemistry, Monash University, Clayton, Victoria 3800, Australia
| | - Nicholas Kirkwood
- ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Paul Mulvaney
- ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Toby D M Bell
- School of Chemistry, Monash University, Clayton, Victoria 3800, Australia
| | - Jared H Cole
- ARC Centre of Excellence in Exciton Science and Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, 3001, Australia
| | - Alison M Funston
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
- School of Chemistry, Monash University, Clayton, Victoria 3800, Australia
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9
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Bao X, Wu X, Ke Y, Wu K, Jiang C, Wu B, Li J, Yue S, Zhang S, Shi J, Du W, Zhong Y, Hu H, Bai P, Gong Y, Zhang Q, Zhang W, Liu X. Giant Out-of-Plane Exciton Emission Enhancement in Two-Dimensional Indium Selenide via a Plasmonic Nanocavity. NANO LETTERS 2023; 23:3716-3723. [PMID: 37125916 DOI: 10.1021/acs.nanolett.2c04902] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are attractive candidates for novel photonic applications, such as radially polarized sources, integrated photonic chips, and quantum communications. However, their low quantum efficiency resulting from forbidden transitions limits their practicality. In this work, we achieve a giant enhancement of up to 34000 for OP exciton emission in indium selenide (InSe) via a designed Ag nanocube-over-Au film plasmonic nanocavity. The large photoluminescence enhancement factor (PLEF) is attributed to the induced OP local electric field (Ez) within the nanocavity, which facilitates effective OP exciton-plasmon interaction and subsequent tremendous enhancement. Moreover, the nanoantenna effect resulting from the effective interaction improves the directivity of spontaneous radiation. Our results not only reveal an effective photoluminescence enhancement approach for OP excitons but also present an avenue for designing on-chip photonic devices with an OP dipole orientation.
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Affiliation(s)
- Xiaotian Bao
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, People's Republic of China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuxuan Ke
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jing Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Huatian Hu
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, People's Republic of China
| | - Peng Bai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yiyang Gong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenkai Zhang
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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10
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Kim TJ, Lee SH, Lee E, Seo C, Kim J, Joo J. Far-Red Interlayer Excitons of Perovskite/Quantum-Dot Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207653. [PMID: 36938849 DOI: 10.1002/advs.202207653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Indexed: 05/18/2023]
Abstract
Interlayer excitons (IXs) at the interface of heterostructures (HSs) with a staggered band alignment are fascinating quantum quasi-particles with light-emitting and long-lifetime characteristics. In this study, the energy band alignments (EBAs) of the HS of MAPbI3 perovskite thin sheets with CdSe-ZnS core-shell quantum dot (QD) layers are modulated by using different diameters of the QDs. Far-red IX emission is observed at 1.42 eV from the HS of MAPbI3 /CdSe-ZnS-QD (λem = 645 nm) with type-II EBA owing to charge transfer. The lifetime of the far-red IXs is estimated to be 5.68 µs, which is considerably longer than that (0.715 ns) of the intralayer excitons from CdSe-ZnS-QD. With increasing incident excitation power, the PL peak and its intensity of IXs are blue-shifted and linearly increased, respectively, indicating a strong dipole alignment of far-red IXs at the heterojunction. Back focal plane imaging suggests that the directions of dipole moments of the IXs are relatively out-of-plane compared to those of the intralayer excitons (MAPbI3 and CdSe-ZnS-QD). Notably, the abnormal behavior of the optical characteristics is observed near the phase transition temperature (90 K) of MAPbI3 . MAPbI3 /CdSe-ZnS-QD HS photodetectors show the increase in photocurrent and detectivity compared to MAPbI3 at IX excitation.
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Affiliation(s)
- Taek Joon Kim
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Sang-Hun Lee
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Eunji Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Changwon Seo
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
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11
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Zhao L, Jiang Y, Li C, Liang Y, Wei Z, Wei X, Zhang Q. Probing Anisotropic Deformation and Near-Infrared Emission Tuning in Thin-Layered InSe Crystal under High Pressure. NANO LETTERS 2023; 23:3493-3500. [PMID: 37023469 DOI: 10.1021/acs.nanolett.3c00593] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Indium selenide (InSe) exhibits high lattice compressibility and an extraordinary capability of tailoring the optical band gap under pressure beyond other 2D materials. Herein, by applying hydrostatic pressure via a diamond anvil cell, we revealed an anisotropic deformation dynamic and efficient manipulation of near-infrared light emission in thin-layered InSe strongly correlated to layer numbers (N = 5-30). As N > 20, the InSe lattice is compressed in all directions, and the intralayer compression leads to widening of the band gap, resulting in an emission blue shift (∼120 meV at 1.5 GPa). In contrast, as N ≤ 15, an efficient emission red shift is observed from band gap shrinkage (rate of 100 meV GPa-1), which is attributed to the predominant uniaxial interlayer compression because of the high strain resistance along the InSe-diamond interface. These findings advance the understanding of pressure-induced lattice deformation and optical transition evolution in InSe and could be applied to other 2D materials.
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Affiliation(s)
- Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
- International school for optoelectronic engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Yingjie Jiang
- State Key Laboratory for Turbulence and Complex Systems, Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex Systems, Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing 100871, China
- Peking University Nanchang Innovation Institute, Nanchang 330000, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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12
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Liang Y, Zhao L, Li C, Du J, Shang Q, Wei Z, Zhang Q. Strong Exciton-Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission. NANO LETTERS 2023; 23:4058-4065. [PMID: 37083440 DOI: 10.1021/acs.nanolett.3c00932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
P-band emission is a superlinear low-coherence emission through exciton-exciton (X-X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm-2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X-X scattering strength of 0.25 μeV μm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.
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Affiliation(s)
- Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jiaxing Du
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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13
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Zhang L, Zhou F, Zhang X, Yang S, Wen B, Yan H, Yildirim T, Song X, Yang Q, Tian M, Wan N, Song H, Pei J, Qin S, Zhu J, Wageh S, Al-Hartomy OA, Al-Sehemi AG, Shen H, Liu Y, Zhang H. Discovery of Type II Interlayer Trions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206212. [PMID: 36373507 DOI: 10.1002/adma.202206212] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 10/25/2022] [Indexed: 06/16/2023]
Abstract
In terms of interlayer trions, electronic excitations in van der Waals heterostructures (vdWHs) can be classified into Type I (i.e., two identical charges in the same layer) and Type II (i.e., two identical charges in the different layers). Type I interlayer trions are investigated theoretically and experimentally. By contrast, Type II interlayer trions remain elusive in vdWHs, due to inadequate free charges, unsuitable band alignment, reduced Coulomb interactions, poor interface quality, etc. Here, the first observation of Type II interlayer trions is reported by exploring band alignments and choosing an atomically thin organic-inorganic system-monolayer WSe2 /bilayer pentacene heterostructure (1L + 2L HS). Both positive and negative Type II interlayer trions are electrically tuned and observed via PL spectroscopy. In particular, Type II interlayer trions exhibit in-plane anisotropic emission, possibly caused by their unique spatial structure and anisotropic charge interactions, which is highly correlated with the transition dipole moment of pentacene. The results pave the way to develop excitonic devices and all-optical circuits using atomically thin organic-inorganic bilayers.
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Affiliation(s)
- Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Fei Zhou
- State Key Laboratory for Environment-friendly Energy Materials, School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang, 621010, China
| | - Xiaowei Zhang
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo, 315211, China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Bo Wen
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Han Yan
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK
| | - Tanju Yildirim
- Center for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Xiaoying Song
- College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| | - Qi Yang
- Intstitue of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ming Tian
- SEU-FEI Nano Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronics Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Neng Wan
- SEU-FEI Nano Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronics Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Hucheng Song
- Center of Energy Storage Materials & Technology, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China
| | - Shuchao Qin
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng, 252059, China
| | - Jiaqi Zhu
- Intstitue of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - S Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Abdullah G Al-Sehemi
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
| | | | - Youwen Liu
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Han Zhang
- Intstitue of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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14
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Li J, Wang L, Chen Y, Li Y, Zhu H, Li L, Tong L. Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:147. [PMID: 36616059 PMCID: PMC9824543 DOI: 10.3390/nano13010147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 12/25/2022] [Accepted: 12/26/2022] [Indexed: 06/17/2023]
Abstract
Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays. However, nonlinear optical property studies based on the graphene/InSe heterostructure are insufficient. Here, we fabricated a graphene/InSe heterostructure by mechanical exfoliation and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface was confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by the built-in electric potential (~286 meV) and broadband nonlinear absorption, the application of the graphene/InSe heterostructure in a mode-locked laser was realized. Our work not only provides a deeper understanding of the dipole orientation-related interface interactions on the photoexcited charge transfer of graphene/InSe heterostructures, but also enriches the saturable absorber family for ultrafast photonics application.
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Affiliation(s)
- Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lizhen Wang
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yuzhong Chen
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yujie Li
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Haiming Zhu
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
| | - Limin Tong
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
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15
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Genco A, Cruciano C, Corti M, McGhee KE, Ardini B, Sortino L, Hüttenhofer L, Virgili T, Lidzey DG, Maier SA, Bassi A, Valentini G, Cerullo G, Manzoni C. k-Space Hyperspectral Imaging by a Birefringent Common-Path Interferometer. ACS PHOTONICS 2022; 9:3563-3572. [PMID: 36411818 PMCID: PMC9673149 DOI: 10.1021/acsphotonics.2c00959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Indexed: 06/16/2023]
Abstract
Fourier-plane microscopy is a powerful tool for measuring the angular optical response of a plethora of materials and photonic devices. Among them, optical microcavities feature distinctive energy-momentum dispersions, crucial for a broad range of fundamental studies and applications. However, measuring the whole momentum space (k-space) with sufficient spectral resolution using standard spectroscopic techniques is challenging, requiring long and alignment-sensitive scans. Here, we introduce a k-space hyperspectral microscope, which uses a common-path birefringent interferometer to image photoluminescent organic microcavities, obtaining an angle- and wavelength-resolved view of the samples in only one measurement. The exceptional combination of angular and spectral resolution of our technique allows us to reconstruct a three-dimensional (3D) map of the cavity dispersion in the energy-momentum space, revealing the polarization-dependent behavior of the resonant cavity modes. Furthermore, we apply our technique for the characterization of a dielectric nanodisk metasurface, evidencing the angular and spectral behavior of its anapole mode. This approach is able to provide a complete optical characterization for materials and devices with nontrivial angle-/wavelength-dependent properties, fundamental for future developments in the fields of topological photonics and optical metamaterials.
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Affiliation(s)
- Armando Genco
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Cristina Cruciano
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Matteo Corti
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Kirsty E. McGhee
- Department
of Physics and Astronomy, University of
Sheffield, Hounsfield Road, S3 7RH Sheffield, U.K.
| | - Benedetto Ardini
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Luca Sortino
- Chair
in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 Munich, Germany
| | - Ludwig Hüttenhofer
- Chair
in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 Munich, Germany
| | - Tersilla Virgili
- Istituto
di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - David G. Lidzey
- Department
of Physics and Astronomy, University of
Sheffield, Hounsfield Road, S3 7RH Sheffield, U.K.
| | - Stefan A. Maier
- Chair
in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 Munich, Germany
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- Department
of Physics, Imperial College London, London, SW7 2AZ, U.K.
| | - Andrea Bassi
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Gianluca Valentini
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Giulio Cerullo
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
- Istituto
di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
| | - Cristian Manzoni
- Istituto
di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy
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16
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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17
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Lu YY, Yu HC, Wang YX, Hung CK, Chen YR, Jhou J, Yen PTW, Hsu JH, Sankar R. Optical determination of layered-materials InSe thickness via RGB contrast method and regression analysis. NANOTECHNOLOGY 2022; 33:485702. [PMID: 35998580 DOI: 10.1088/1361-6528/ac8bda] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 08/22/2022] [Indexed: 06/15/2023]
Abstract
Indium selenide (InSe) features intriguing thickness-dependent optoelectronic properties, and a simple, and precise way to identify the thickness is essential for the rapid development of InSe research. Here, a red, green, and blue (RGB) color contrast method with regression analysis for quantitative correlation of three optical contrasts from RGB channels with the InSe thickness (1-35 nm), is demonstrated. The lower accuracy of the thickness identification obtained from the individual channels was discussed. Moreover, the effective refractive indices in the three RGB regions can be extracted from the Fresnel equation and numerical analysis by finding the best fit to the experimental optical contrast. After further consideration of the wavelength-dependent refractive indices, the slope of the regression line between the estimated thickness and that obtained from the atomic force microscope was improved from 1.59 ± 0.05 to 0.97 ± 0.02. The complex refractive index spectra of InSe (1-10 layers) generated fromab initionumerical calculation results were also adopted to identify the InSe thickness. Compared to dispersion, the evolution of the band structure had less effect on thickness identification. This work could be extended to other layered materials, facilitate the thickness-dependent study of layered materials, and expedite the realization of their practical applications.
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Affiliation(s)
- Yi-Ying Lu
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Hsiao-Ching Yu
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - You-Xin Wang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Chih-Keng Hung
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - You-Ren Chen
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jie Jhou
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Peter Tsung-Wen Yen
- Center for Crystal researches, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jui-Hung Hsu
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
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18
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Cui X, Du M, Das S, Yoon HH, Pelgrin VY, Li D, Sun Z. On-chip photonics and optoelectronics with a van der Waals material dielectric platform. NANOSCALE 2022; 14:9459-9465. [PMID: 35735657 PMCID: PMC9261272 DOI: 10.1039/d2nr01042a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 05/29/2022] [Indexed: 06/15/2023]
Abstract
During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (i.e., silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials. On-chip light propagation, emission, and detection are demonstrated by taking advantage of different van der Waals materials. Low-loss passive waveguides with MoS2 and on-chip light sources and photodetectors with InSe have been realised. Our proof-of-concept demonstration of passive and active on-chip photonic components endorses van der Waals materials for offering a new dielectric platform with a large material-selection degree of freedom and unique properties toward close-to-atomic scale manufacture of on-chip photonic and optoelectronic devices.
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Affiliation(s)
- Xiaoqi Cui
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Mingde Du
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Hoon Hahn Yoon
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Vincent Yves Pelgrin
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Diao Li
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
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19
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Henck H, Mauro D, Domaretskiy D, Philippi M, Memaran S, Zheng W, Lu Z, Shcherbakov D, Lau CN, Smirnov D, Balicas L, Watanabe K, Taniguchi T, Fal'ko VI, Gutiérrez-Lezama I, Ubrig N, Morpurgo AF. Light sources with bias tunable spectrum based on van der Waals interface transistors. Nat Commun 2022; 13:3917. [PMID: 35798736 PMCID: PMC9263129 DOI: 10.1038/s41467-022-31605-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 06/13/2022] [Indexed: 11/09/2022] Open
Abstract
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -by suitably selecting the material forming the interfaces- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Affiliation(s)
- Hugo Henck
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Diego Mauro
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Wenkai Zheng
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Dmitry Shcherbakov
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Booth Street East, M13 9PL, Manchester, UK.,Henry Royce Institute for Advanced Materials, M13 9PL, Manchester, UK
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
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20
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Uddin MG, Das S, Shafi AM, Khayrudinov V, Ahmed F, Fernandez H, Du L, Lipsanen H, Sun Z. Engineering the Dipole Orientation and Symmetry Breaking with Mixed-Dimensional Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200082. [PMID: 35532325 PMCID: PMC9284189 DOI: 10.1002/advs.202200082] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Revised: 03/31/2022] [Indexed: 05/27/2023]
Abstract
Engineering of the dipole and the symmetry of materials plays an important role in fundamental research and technical applications. Here, a novel morphological manipulation strategy to engineer the dipole orientation and symmetry of 2D layered materials by integrating them with 1D nanowires (NWs) is reported. This 2D InSe -1D AlGaAs NW heterostructure example shows that the in-plane dipole moments in InSe can be engineered in the mixed-dimensional heterostructure to significantly enhance linear and nonlinear optical responses (e.g., photoluminescence, Raman, and second harmonic generation) with an enhancement factor of up to ≈12. Further, the 1D NW can break the threefold rotational symmetry of 2D InSe, leading to a strong optical anisotropy of up to ≈65%. These results of engineering dipole orientation and symmetry breaking with the mixed-dimensional heterostructures open a new path for photonic and optoelectronic applications.
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Affiliation(s)
- Md Gius Uddin
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Susobhan Das
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Abde Mayeen Shafi
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Vladislav Khayrudinov
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Faisal Ahmed
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Henry Fernandez
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Luojun Du
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Harri Lipsanen
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Zhipei Sun
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
- QTF Centre of ExcellenceDepartment of Applied PhysicsAalto UniversityAaltoFI‐00076Finland
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21
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Li N, Okmi A, Jabegu T, Zheng H, Chen K, Lomashvili A, Williams W, Maraba D, Kravchenko I, Xiao K, He K, Lei S. van der Waals Semiconductor Empowered Vertical Color Sensor. ACS NANO 2022; 16:8619-8629. [PMID: 35436098 DOI: 10.1021/acsnano.1c09875] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Biomimetic artificial vision is receiving significant attention nowadays, particularly for the development of neuromorphic electronic devices, artificial intelligence, and microrobotics. Nevertheless, color recognition, the most critical vision function, is missed in the current research due to the difficulty of downscaling of the prevailing color sensing devices. Conventional color sensors typically adopt a lateral color sensing channel layout and consume a large amount of physical space, whereas compact designs suffer from an unsatisfactory color detection accuracy. In this work, we report a van der Waals semiconductor-empowered vertical color sensing structure with the emphasis on compact device profile and precise color recognition capability. More attractive, we endow color sensor hardware with the function of chromatic aberration correction, which can simplify the design of an optical lens system and, in turn, further downscales the artificial vision systems. Also, the dimension of a multiple pixel prototype device in our study confirms the scalability and practical potentials of our developed device architecture toward the above applications.
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Affiliation(s)
- Ningxin Li
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Aisha Okmi
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
- Department of Physics, Jazan University, Jazan 45142, Saudi Arabia
| | - Tara Jabegu
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Hongkui Zheng
- Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - Kuangcai Chen
- Department of Chemistry, Georgia State University, Atlanta, Georgia 30303, United States
| | - Alexander Lomashvili
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Westley Williams
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Diren Maraba
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Ivan Kravchenko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Kai He
- Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, United States
- Department of Material Science and Engineering, University of California, Irvine, California 92697, United States
| | - Sidong Lei
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
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22
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Zhao L, Liang Y, Cai X, Du J, Wang X, Liu X, Wang M, Wei Z, Zhang J, Zhang Q. Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing. NANO LETTERS 2022; 22:3840-3847. [PMID: 35500126 DOI: 10.1021/acs.nanolett.2c01127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
γ-indium selenide (InSe) is a van der Waals semiconductor and holds great potentials for low-energy-consumption electronic and optoelectronic devices. Herein, we investigated the hydrostatic pressure engineered near-infrared (NIR) light emission of mechanically exfoliated γ-InSe crystals using the diamond anvil cell (DAC) technique. A record-wide spectral tuning range of 185 nm and a large linear pressure coefficient of 40 nm GPa-1 were achieved for spontaneous emissions, leading to ultrabroadband microlasing spectrally ranging from 1022 to 911 nm. This high emission tunability can be attributed to the compression of the soft intralayer In-Se bonds under high pressure, which suppressed the band gap shrinkage by increasing the interlayer interaction. Furthermore, two band gap crossovers of valence (direct-to-indirect) and conduction bands were resolved at approximately 4.0 and 7.0 GPa, respectively, resulting in pressure-sensitive emission lifetime and intensity. These findings pave the pathways for pressure-sensitive InSe-based NIR light sources, sensors and so on.
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Affiliation(s)
- Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xinghong Cai
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Jiaxing Du
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Min Wang
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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23
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Radiative pattern of intralayer and interlayer excitons in two-dimensional WS 2/WSe 2 heterostructure. Sci Rep 2022; 12:6939. [PMID: 35484181 PMCID: PMC9050751 DOI: 10.1038/s41598-022-10851-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 04/04/2022] [Indexed: 12/04/2022] Open
Abstract
Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moiré-pattern-induced features. Particularly, the dipolar charge-transfer exciton comprising an electron and a hole, which are confined to separate layers of 2D semiconductors and Coulomb-bound across the heterojunction interface, has drawn considerable attention in the research community. On the one hand, it bears significance for optoelectronic devices, e.g. in terms of charge carrier extraction from photovoltaic devices. On the other hand, its spatially indirect nature and correspondingly high longevity among excitons as well as its out-of-plane dipole orientation render it attractive for excitonic Bose–Einstein condensation studies, which address collective coherence effects, and for photonic integration schemes with TMDCs. Here, we demonstrate the interlayer excitons’ out-of-plane dipole orientation through angle-resolved spectroscopy of the HS photoluminescence at cryogenic temperatures, employing a tungsten-based TMDC HS. Within the measurable light cone, the directly-obtained radiation profile of this species clearly resembles that of an in-plane emitter which deviates from that of the intralayer bright excitons as well as the other excitonic HS features recently attributed to artificial superlattices formed by moiré patterns.
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24
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Cheng CY, Pai WL, Chen YH, Paylaga NT, Wu PY, Chen CW, Liang CT, Chou FC, Sankar R, Fuhrer MS, Chen SY, Wang WH. Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors. NANO LETTERS 2022; 22:2270-2276. [PMID: 35225620 DOI: 10.1021/acs.nanolett.1c04522] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.
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Affiliation(s)
- Chih-Yi Cheng
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Wei-Liang Pai
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yi-Hsun Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | | | - Pin-Yun Wu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Fang-Cheng Chou
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
| | - Raman Sankar
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Shao-Yu Chen
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
- Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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25
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Katznelson S, Cohn B, Sufrin S, Amit T, Mukherjee S, Kleiner V, Mohapatra P, Patsha A, Ismach A, Refaely-Abramson S, Hasman E, Koren E. Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature. MATERIALS HORIZONS 2022; 9:1089-1098. [PMID: 35083477 DOI: 10.1039/d1mh01186c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
2D-semiconductors with strong light-matter interaction are attractive materials for integrated and tunable optical devices. Here, we demonstrate room-temperature wavelength multiplexing of the two-primary bright excitonic channels (Ab-, Bb-) in monolayer transition metal dichalcogenides (TMDs) arising from a dark exciton mediated transition. We present how tuning dark excitons via an out-of-plane electric field cedes the system equilibrium from one excitonic channel to the other, encoding the field polarization into wavelength information. In addition, we demonstrate how such exciton multiplexing is dictated by thermal-scattering by performing temperature dependent photoluminescence measurements. Finally, we demonstrate experimentally and theoretically how excitonic mixing can explain preferable decay through dark states in MoX2 in comparison with WX2 monolayers. Such field polarization-based manipulation of excitonic transitions can pave the way for novel photonic device architectures.
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Affiliation(s)
- Shaul Katznelson
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Bar Cohn
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Shmuel Sufrin
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Tomer Amit
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
| | - Vladimir Kleiner
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Pranab Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Avinash Patsha
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Sivan Refaely-Abramson
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Erez Hasman
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- Atomic-Scale Photonics Laboratory, Faculty of Mechanical Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
- Russell Berrie Nanotechnology Institute, and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
- The Nancy and Stephen Grand Technion Energy Program, Technion - Israel Institute of Technology, Haifa 3200003, Israel
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26
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Li C, Zhao L, Shang Q, Wang R, Bai P, Zhang J, Gao Y, Cao Q, Wei Z, Zhang Q. Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake. ACS NANO 2022; 16:1477-1485. [PMID: 34928140 DOI: 10.1021/acsnano.1c09844] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton-exciton scattering with a high net modal optical gain of ∼1029 cm-1. Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.
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Affiliation(s)
- Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Ruonan Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Peng Bai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yunan Gao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Qiang Cao
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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27
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Miao P, Chen YT, Pan L, Horneber A, Greulich K, Chassé T, Peisert H, Adam PM, Xu P, Meixner A, Zhang D. Inhomogeneous defect distribution of triangular WS2 monolayer revealed by surface-enhanced and tip-enhanced Raman and photoluminescence spectroscopy. J Chem Phys 2022; 156:034702. [DOI: 10.1063/5.0078113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Peng Miao
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Harbin Institute of Technology, Harbin, People’s Republic of China
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Yu-Ting Chen
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Lin Pan
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
- Laboratoire Lumière, nanomatériaux et nanotechnologies – L2n, Université de Technologie de Troyes & CNRS EMR 7004, 12 Rue Marie Curie, CS42060, 10004 Troyes Cedex, France
| | - Anke Horneber
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Katharina Greulich
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Thomas Chassé
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Heiko Peisert
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Pierre-Michel Adam
- Laboratoire Lumière, nanomatériaux et nanotechnologies – L2n, Université de Technologie de Troyes & CNRS EMR 7004, 12 Rue Marie Curie, CS42060, 10004 Troyes Cedex, France
| | - Ping Xu
- Harbin Institute of Technology, Harbin, People’s Republic of China
| | - Alfred Meixner
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
| | - Dai Zhang
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
- Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany
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28
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Zhang X, Li L, Ji C, Liu X, Li Q, Zhang K, Peng Y, Hong M, Luo J. Rational design of high-quality 2D/3D perovskite heterostructure crystals for record-performance polarization-sensitive photodetection. Natl Sci Rev 2021; 8:nwab044. [PMID: 34858607 PMCID: PMC8566186 DOI: 10.1093/nsr/nwab044] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Revised: 02/24/2021] [Accepted: 03/06/2021] [Indexed: 02/06/2023] Open
Abstract
Polarization-sensitive photodetection is central to optics applications and has been successfully demonstrated in photodetectors of two-dimensional (2D) materials, such as layered hybrid perovskites; however, achieving high polarization sensitivity in such a photodetector remains extremely challenging. Here, for the first time, we demonstrate a high-performance polarization-sensitive photodetector using single-crystalline 2D/3D perovskite heterostructure, namely, (4-AMP)(MA)2Pb3Br10/MAPbBr3 (MA = methylammonium; 4-AMP = 4-(aminomethyl)piperidinium), which exhibits ultrahigh polarization sensitivity up to 17.6 under self-driven mode. To our knowledge, such a high polarization selectivity has surpassed all of the reported perovskite-based devices, and is comparable to, or even better than, the traditional inorganic heterostructure-based photodetectors. Further studies reveal that the built-in electric field formed at the junction can spatially separate the photogenerated electrons and holes, reducing their recombination rate and thus enhancing the performance for polarization-sensitive photodetection. This work provides a new source of polarization-sensitive materials and insights into designing novel optoelectronic devices.
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Affiliation(s)
- Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Qing Li
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kun Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yu Peng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
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29
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DeCrescent RA, Kennard RM, Chabinyc ML, Schuller JA. Optical-Frequency Magnetic Polarizability in a Layered Semiconductor. PHYSICAL REVIEW LETTERS 2021; 127:173604. [PMID: 34739261 DOI: 10.1103/physrevlett.127.173604] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
The optical response of crystals is most commonly attributed to electric dipole interactions between light and matter. Although metamaterials support "artificial" magnetic resonances supported by mesoscale structuring, there are no naturally occurring materials known to exhibit a nonzero optical-frequency magnetic polarizability. Here, we experimentally demonstrate and quantify a naturally occurring nonzero magnetic polarizability in a layered semiconductor system: two-dimensional (Ruddlesden-Popper phase) hybrid organic-inorganic perovskites. These results demonstrate the only known material with an optical-frequency permeability that differs appreciably from vacuum, informing future efforts to find, synthesize, or exploit atomic-scale optical magnetism for novel optical phenomena such as negative index of refraction and electromagnetic cloaking.
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Affiliation(s)
- Ryan A DeCrescent
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
| | - Rhys M Kennard
- Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - Michael L Chabinyc
- Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - Jon A Schuller
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
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30
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Liu J, Maître A, Coolen L. Tailoring Experimental Configurations to Probe Transition Dipoles of Fluorescent Nanoemitters by Polarimetry or Fourier Imaging with Enhanced Sensitivity. J Phys Chem A 2021; 125:7572-7580. [PMID: 34410716 DOI: 10.1021/acs.jpca.1c05167] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Probing the transition dipoles responsible for the luminescence of a nanoemitter is essential to understanding its physical properties, its interactions with its environment, and its potential applications. Various methods in photoluminescence microscopy, based on polarimetry or Fourier imaging, have been developed to measure an emitter's dipole properties: the number of radiating dipoles, the oscillator strength ratio between them, and their orientation. In this article, we model the most used of these protocols and show that their sensitivity depends crucially on the experimental conditions: substrate material, presence of another lower or upper layer, and objective numerical aperture. We develop guidelines to optimize the measurement sensitivity by tailoring the experimental conditions, depending on the type of protocol used and the dipole property to be measured.
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Affiliation(s)
- Jiawen Liu
- Sorbonne Université, CNRS, Institut de NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Agnès Maître
- Sorbonne Université, CNRS, Institut de NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Laurent Coolen
- Sorbonne Université, CNRS, Institut de NanoSciences de Paris, INSP, F-75005 Paris, France
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31
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Wu K, Zhong H, Guo Q, Tang J, Zhang J, Qian L, Shi Z, Zhang C, Yuan S, Zhang S, Xu H. Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers. Natl Sci Rev 2021; 9:nwab135. [PMID: 35795458 PMCID: PMC9252742 DOI: 10.1093/nsr/nwab135] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2020] [Revised: 06/30/2021] [Accepted: 07/12/2021] [Indexed: 11/13/2022] Open
Abstract
Abstract
Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moiré superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at approximately 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Γ-K transition based on a systematic analysis and comparison of experimental PL spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation (GW-BSE) approach indicates that both the electron and hole of the exciton are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the usually called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insights into understanding the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures.
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Affiliation(s)
- Ke Wu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hongxia Zhong
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Quanbing Guo
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Jibo Tang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Jing Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Lihua Qian
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chendong Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Shengjun Yuan
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Shunping Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Hongxing Xu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
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32
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Zhang Z, Yuan Y, Zhou W, Chen C, Yuan S, Zeng H, Fu YS, Zhang W. Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas. ACS NANO 2021; 15:10700-10709. [PMID: 34080842 DOI: 10.1021/acsnano.1c03724] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In2Se3. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.
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Affiliation(s)
- Zhimo Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yuan Yuan
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Weiqing Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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33
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Andres-Penares D, Canet-Albiach R, Noguera-Gomez J, Martínez-Pastor JP, Abargues R, Sánchez-Royo JF. Two-Dimensional Indium Selenide for Sulphur Vapour Sensing Applications. NANOMATERIALS 2020; 10:nano10071396. [PMID: 32708372 PMCID: PMC7408355 DOI: 10.3390/nano10071396] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/18/2020] [Revised: 07/10/2020] [Accepted: 07/14/2020] [Indexed: 01/25/2023]
Abstract
Surface-to-volume ratio in two-dimensional (2D) materials highlights among their characteristics as an inherent and intrinsic advantage taking into account their strong sensitivity to surface effects. For this reason, we have proposed in this work micromechanically exfoliated 2D nanosheets of InSe as an optical vapour sensor. As a proof of concept, we used 2-mercaptoethanol as the chemical analyte in vapour phase to monitor the change of the InSe photoluminescence (PL) before and after exposure to the analyte. For short vapour exposure times (at low analyte concentration), we found a PL enhancement of InSe nanosheets attributed to the surface localization of Se defects. For long vapour exposure times (or higher concentrations) a PL reduction is observed, probably due to the diffusion of molecules within the nanosheet. These results confirm the capability of 2D InSe as a photoluminescent sensor of vapours, because of its sensitivity to surface passivation or volume diffusion of molecules.
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Affiliation(s)
- Daniel Andres-Penares
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
| | - Rodolfo Canet-Albiach
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
| | - Jaume Noguera-Gomez
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
| | - Juan P. Martínez-Pastor
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
- MATINÉE: CSIC Associated Unit-(ICMM-ICMUV of the University of Valencia), Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain
| | - Rafael Abargues
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
| | - Juan F. Sánchez-Royo
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain; (D.A.-P.); (R.C.-A.); (J.N.-G.); (J.P.M.-P.); (R.A.)
- MATINÉE: CSIC Associated Unit-(ICMM-ICMUV of the University of Valencia), Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain
- Correspondence:
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34
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Fu W, Zhao X, Wang K, Chen Z, Leng K, Fu D, Song P, Wang H, Deng L, Pennycook SJ, Zhang G, Peng B, Loh KP. An Anomalous Magneto-Optic Effect in Epitaxial Indium Selenide Layers. NANO LETTERS 2020; 20:5330-5338. [PMID: 32501013 DOI: 10.1021/acs.nanolett.0c01704] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single-phonon modes offer potential applications in quantum phonon optics, but the phonon density of states of most materials consist of mixed contributions from coupled phonons. Here, using theoretical calculations and magneto-Raman measurements, we report two single-phonon vibration modes originating from the breathing and opposite out-of-plane vibrations of InSe layers. These single-phonon vibrations exhibit an anticorrelated scattering rotations of the polarization axis under an applied vertical magnetic field; such an anomalous magneto-optical behavior is due to the reverse bond polarizations of two quantum atomic vibrations, which induce different symmetry for the corresponding Raman selection rules. A 180° (+90° and -90°) integrated scattering rotation angle of two single-phonon modes was achieved when the magnetic field was swept from 0 to 6 T. This work demonstrates new ways to manipulate the magneto-optic effect through phonon polarity-based symmetry control and opens avenues for exploring single-phonon-vibration-based nanomechanical oscillators and magneto-phonon-coupled physics.
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Affiliation(s)
- Wei Fu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Ke Wang
- Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
| | - Zhi Chen
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Kai Leng
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Deyi Fu
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Peng Song
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Hai Wang
- Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
| | - Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
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35
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Ubrig N, Ponomarev E, Zultak J, Domaretskiy D, Zólyomi V, Terry D, Howarth J, Gutiérrez-Lezama I, Zhukov A, Kudrynskyi ZR, Kovalyuk ZD, Patané A, Taniguchi T, Watanabe K, Gorbachev RV, Fal'ko VI, Morpurgo AF. Design of van der Waals interfaces for broad-spectrum optoelectronics. NATURE MATERIALS 2020; 19:299-304. [PMID: 32015532 DOI: 10.1038/s41563-019-0601-3] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2019] [Accepted: 12/20/2019] [Indexed: 05/12/2023]
Abstract
Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a small misalignment of the constituent layers can drastically suppress electron-photon coupling for these interlayer transitions. Here, we engineered type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the Γ point, and thus avoid any momentum mismatch. We found that these van der Waals interfaces exhibit radiative optical transitions irrespective of the lattice constant, the rotational and/or translational alignment of the two layers or whether the constituent materials are direct or indirect gap semiconductors. Being robust and of general validity, our results broaden the scope of future optoelectronics device applications based on two-dimensional materials.
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Affiliation(s)
- Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
- Group of Applied Physics, University of Geneva, Geneva, Switzerland.
| | - Evgeniy Ponomarev
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Johanna Zultak
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Viktor Zólyomi
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Daniel Terry
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - James Howarth
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Alexander Zhukov
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | | | - Zakhar D Kovalyuk
- Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Branch, Chernivtsi, Ukraine
| | - Amalia Patané
- School of Physics & Astronomy, The University of Nottingham, Nottingham, UK
| | | | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - Roman V Gorbachev
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Manchester, UK.
- School of Physics & Astronomy, University of Manchester, Manchester, UK.
- Henry Royce Institute for Advanced Materials, Manchester, UK.
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
- Group of Applied Physics, University of Geneva, Geneva, Switzerland.
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36
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Liu X, Zhang Y, Feng H, Ning Y, Shi Y, Wang X, Yang F. Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles. ACS OMEGA 2020; 5:3000-3005. [PMID: 32095723 PMCID: PMC7033984 DOI: 10.1021/acsomega.9b03949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Accepted: 01/20/2020] [Indexed: 06/10/2023]
Abstract
In this work, we propose using periodic Au nanoparticles (NPs) in indium selenide-based optoelectronic devices to tune the optical absorption of indium selenide. Electromagnetic simulations show that optical absorption of indium selenide can be manipulated by tuning plasmonic resonance. The effect on the plasmonic resonance of the size, period of NPs, the thickness of silicon oxide, and the insulator spacer is systematically analyzed. A high absorption enhancement over the visible spectrum is achieved through systematic optimization of nanostructures.
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Affiliation(s)
- Xiaoyu Liu
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yifei Zhang
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Huayu Feng
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yafei Ning
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yanpeng Shi
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Xiaodong Wang
- Engineering
Research Center for Semiconductor Integrated Technology, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Fuhua Yang
- Engineering
Research Center for Semiconductor Integrated Technology, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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37
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Xiao K, Yan T, Cui X. Dipole Orientation Shift of Ga 2Se 2 by Quantum Confinement. ACS NANO 2020; 14:1027-1032. [PMID: 31799830 DOI: 10.1021/acsnano.9b08524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In the family of III-VI monochalcogenides M2X2 (M = gallium, indium; X = sulfur, selenide, etc.), the interlayer interaction and the electronic band edges share the contribution of the same chalcogenide atomic orbits. This makes quantum confinement and interlayer interaction play a subtle role in two-dimensional (2D) monochalcogenides crystals. In this report, we study the direction-resolved photoluminescence of 2D Ga2Se2 at various thicknesses. We observe that the in-plane dipole radiation survives, but out-of-plane dipole radiation fades at 2D limits.
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Affiliation(s)
- Ke Xiao
- Department of Physics , University of Hong Kong , Hong Kong , China
| | - Tengfei Yan
- Department of Physics , University of Hong Kong , Hong Kong , China
| | - Xiaodong Cui
- Department of Physics , University of Hong Kong , Hong Kong , China
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