Liquids relax and unify strain in graphene

Impact of gate electrode on free chlorine sensing performance in solution-gated graphene field-effect transistors

Free chlorine is widely used to disinfect water used for drinking and food processing. This requires highly sensitive, simple, and capable continuous-measurement sensors to enable the concentration of free chlorine in water to be monitored and controlled. Free chlorine sensors based on solution-gated graphene field-effect transistors (GFETs) are a suitable platform for highly sensitive and continuous measurements. However, their sensing mechanisms require further elucidation to improve their performance. In this study, we focused on the gate electrode and investigated its influence on the sensing performance. Using the free chlorine sensor based on the solution-gate GFET, we showed that the Dirac point voltage in the transfer curve changed significantly as the free chlorine concentration changed, and the electric double-layer capacitance of the gate electrode decreased. Furthermore, we demonstrated that a solution-gated GFET using graphene or boron-doped diamond as the gate electrode could be used to detect changes in the free chlorine concentration in the concentration range of tap water. The sensing performance in the low concentration range benefits from the wide potential window of carbon-based electrodes, which do not have electrochemically active sites. Using these carbon-based materials as gate electrodes, GFETs have the potential to be used as durable sensors that are resistant to surface fouling and oxidation.

Pure Graphene Acts as an "Entropic Surfactant" at the Octanol-Water Interface

Graphene oxide (GO) has proved itself as a nanomaterial capable of acting as a surfactant by lowering the interfacial tension of the oil-water interface due to its polar oxygen groups. However, the surfactant behavior of the pure graphene sheet─since prevention of edge oxidation in experimental setups is nontrivial─is still an unresolved issue in graphene research despite significant progress in the field in recent years. Here, we conduct both atomistic and coarse-grained simulations to demonstrate that─surprisingly─even pristine graphene, which only consists of hydrophobic carbon atoms, is attracted to the octanol-water interface and consequently reduces its surface tension by 2.3 kBT/nm2 or about 10 mN/m. Interestingly, the location of the free energy minimum is not precisely at the oil-water interface itself but is rather buried about two octanol layers into the octanol phase, being about 0.9 nm from the water phase. We demonstrate that the observed surfactant behavior is purely entropically driven and can be attributed to the unfavorable lipid-like structuring of octanol molecules at the free octanol-water interface. In essence, graphene enhances the inherent lipid-like behavior of octanol at the water interface rather than directly acting as a surfactant. Importantly, graphene does not display surfactant-like behavior in corresponding Martini coarse-grained simulations of the octanol-water system since the free liquid-liquid interface loses essential structure at the lower coarse-grained resolution. However, a similar surfactant behavior is recovered in coarse-grained simulations of longer alcohols such as dodecan-1-ol and hexadecan-1-ol. The observed discrepancies at different model resolutions enable us to construct a comprehensive model of the surfactant behavior of graphene at the octanol-water interface. The here-gained insights may facilitate the broader utilization of graphene in numerous domains of nanotechnology. Furthermore, since a drug's octanol-water partition coefficient is a crucial physicochemical parameter in rational drug discovery, we also believe that the universality of the here-illustrated entropic surfactant behavior of planar molecules deserves special attention in the drug design and development field.

Revisiting Frictional Characteristics of Graphene: Effect of In-Plane Straining

Supreme mechanical performance and tribological properties render graphene a promising candidate as a surface friction modifier. Recently, it has been demonstrated that applying in-plane strain can effectively tune friction of suspended graphene in a reversible manner. However, since graphene is deposited on solid surfaces in most tribological applications, whether such operation will result in a similar modulation effect becomes a critical question to be answered. Herein, by depositing graphene onto a stretchable substrate, the frictional characteristics of supported graphene under a wide range of strain are examined with an in situ tensile loading platform. The experimental results show that friction of supported graphene decreases with increasing graphene strain, similar to the suspended system. However, depending on the adherence state of the graphene/substrate interface, the system exhibits two distinct friction regimes with significantly different strain dependences. Assisted by detailed atomic force microscopy imaging, we attribute the unique behavior to the transition between two friction modulation modes, i.e., contact-quality-dominated friction and puckering-dominated friction. This work provides a more comprehensive view of the influence of strain on surface friction of graphene, which is beneficial for active modulation of graphene friction through strain engineering.

Boosting Oxygen Evolution Reaction on Metallocene-based Transition Metal Sulfides Integrated with N-doped Carbon Nanostructures

In this study, utilizing metallocene and organosulfur chelating agent, an innovative synthetic route was developed towards electrochemically activated transition metal sulfides entrapped in pyridinic nitrogen-incorporated carbon nanostructures for superior oxygen evolution reaction (OER). Most importantly, the preferential electrochemical activation process, which consisted of both anodic and cathodic pre-treatment steps, strikingly enhanced OER and long-lasting cyclic stability. The substantial increase in OER electrocatalytic activity of Ni₉ S₈ /Ni₃ S₂ -NC and Co₉ S₈ -NC during the activation process was mainly attributed to the increase of faradaic active site density on the catalytic layer resulting from the reconstruction of catalytic interfaces. It was also found that Fe-based metallocene [ferrocene (Fc)]-incorporation in the Co₉ S₈ -NC and Ni₉ S₈ /Ni₃ S₂ -NC nanostructures significantly boosted the OER activity. Thus, the combined effects of Fc-incorporation and the electrochemical activation process reduced the overpotential to about 115 and 95 mV on the Ni₉ S₈ /Ni₃ S₂ -NC and Co₉ S₈ -NC nanostructures to derive a current density of 10 mA cm^-2 , respectively. Notably, Fc-Ni₉ S₈ /Ni₃ S₂ -NC electrocatalysts required very small overpotentials of around 222, 244, and 280 mV to acquire the current densities of 10, 20, and 50 mA cm^-2 , respectively. This work opens up a new avenue for superior OER electrocatalysts by the utilization of metallocene and the preferential electrochemical activation process.

Reversible hydrogenation restores defected graphene to graphene

Graphene as a two-dimensional material is prone to hydrocarbon contaminations, which can significantly alter its intrinsic electrical properties. Herein, we implement a facile hydrogenation-dehydrogenation strategy to remove hydrocarbon contaminations and preserve the excellent transport properties of monolayer graphene. Using electron microscopy we quantitatively characterized the improved cleanness of hydrogenated graphene compared to untreated samples. In situ spectroscopic investigations revealed that the hydrogenation treatment promoted the adsorption ofytyt water at the graphene surface, resulting in a protective layer against the re-deposition of hydrocarbon molecules. Additionally, the further dehydrogenation of hydrogenated graphene rendered a more pristine-like basal plane with improved carrier mobility compared to untreated pristine graphene. Our findings provide a practical post-growth cleaning protocol for graphene with maintained surface cleanness and lattice integrity to systematically carry a range of surface chemistry in the form of a well-performing and reproducible transistor.