Memristor networks for real-time neural activity analysis

Random resistive memory-based deep extreme point learning machine for unified visual processing

Visual sensors, including 3D light detection and ranging, neuromorphic dynamic vision sensor, and conventional frame cameras, are increasingly integrated into edge-side intelligent machines. However, their data are heterogeneous, causing complexity in system development. Moreover, conventional digital hardware is constrained by von Neumann bottleneck and the physical limit of transistor scaling. The computational demands of training ever-growing models further exacerbate these challenges. We propose a hardware-software co-designed random resistive memory-based deep extreme point learning machine. Data-wise, the multi-sensory data are unified as point set and processed universally. Software-wise, most weights are exempted from training. Hardware-wise, nanoscale resistive memory enables collocation of memory and processing, and leverages the inherent programming stochasticity for generating random weights. The co-design system is validated on 3D segmentation (ShapeNet), event recognition (DVS128 Gesture), and image classification (Fashion-MNIST) tasks, achieving accuracy comparable to conventional systems while delivering 6.78 × /21.04 × /15.79 × energy efficiency improvements and 70.12%/89.46%/85.61% training cost reductions.

Nonlinear memristor model with exact solution allows for ex situ reservoir computing training and in situ inference

Memristive physical reservoir computing is a promising approach for solving data classification and temporal processing tasks. This method exploits the nonlinear dynamics of physical, low-power devices to achieve high-dimensional mapping of input signals. Ion-channel-based memristors, which operate with similar voltages, currents, and timescales as biological synapses, are promising due to their rich dynamics, especially for use in biological edge settings. Accurate modeling of their dynamics is essential for optimizing network hyperparameters ex situ to save time and energy. Here, a generalized sigmoidal growth model of ion-channel memristor conductance is presented and shown to be more accurate in predicting dynamics than linear or logistic models. Using the exact solution of the proposed sigmoidal model, the MNIST handwritten digit classification task is optimized and trained ex situ, then tested in situ with the same trained weights. This approach achieved an experimental testing accuracy of 90.6%.

Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems

Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, and flow. Researchers are increasingly deploying mechanical information recognition technologies (MIRT) that integrate information acquisition, pre-processing, and processing functions and are expected to enable advanced applications. However, this also poses significant challenges to information acquisition performance and information processing efficiency. The novel and exciting mechanosensory systems of organisms in nature have inspired us to develop superior mechanical information bionic recognition technologies (MIBRT) based on novel bionic materials, structures, and devices to address these challenges. Herein, first bionic strategies for information pre-processing are presented and their importance for high-performance information acquisition is highlighted. Subsequently, design strategies and considerations for high-performance sensors inspired by mechanoreceptors of organisms are described. Then, the design concepts of the neuromorphic devices are summarized in order to replicate the information processing functions of a biological nervous system. Additionally, the ability of MIBRT is investigated to recognize basic mechanical information. Furthermore, further potential applications of MIBRT in intelligent robots, healthcare, and virtual reality are explored with a view to solve a range of complex tasks. Finally, potential future challenges and opportunities for MIBRT are identified from multiple perspectives.

Seizure detection via reservoir computing in MoS2-based charge trap memory devices

Neurological disorders are a substantial global health burden, affecting millions of people worldwide. A key challenge in developing effective treatments and preventive measures is the realization of low-power wearable systems with early detection capabilities. Traditional strategies rely on machine learning algorithms, but their computational demands often exceed what miniaturized systems can provide. Neuromorphic computing, inspired by the human brain, demonstrated capabilities of on-chip computing with low power consumption. In this context, bidimensional (2D) semiconductors hold notable promise, thanks to their unique electronic properties, atomic-scale thickness, and scalability, making them ideal for low-power applications. This work presents a neuromorphic reservoir computing system exploiting MoS2-based charge trap memories (CTMs) for processing of electrophysiological signals. Real-time seizures detection is achieved, thanks to the nonlinear integration of local-field potential (LFP) recorded from in vitro rodent models of ictogenesis. The results support MoS2-based CTMs for low-power biomedical devices in clinical diagnosis and treatment of epilepsy.

Weighted Echo State Graph Neural Networks Based on Robust and Epitaxial Film Memristors

Hardware system customized toward the demands of graph neural network learning would promote efficiency and strong temporal processing for graph-structured data. However, most amorphous/polycrystalline oxides-based memristors commonly have unstable conductance regulation due to random growth of conductive filaments. And graph neural networks based on robust and epitaxial film memristors can especially improve energy efficiency due to their high endurance and ultra-low power consumption. Here, robust and epitaxial Gd: HfO2-based film memristors are reported and construct a weighted echo state graph neural network (WESGNN). Benefiting from the optimized epitaxial films, the high switching speed (20 ns), low energy consumption (2.07 fJ), multi-value storage (4 bits), and high endurance (109) outperform most memristors. Notably, thanks to the appropriately dispersed conductance distribution (standard deviation = 7.68 nS), the WESGNN finely regulates the relative weights of input nodes and recursive matrix to realize state-of-the-art performance using the MUTAG and COLLAB datasets for graph classification tasks. Overall, robust and epitaxial film memristors offer nanoscale scalability, high reliability, and low energy consumption, making them energy-efficient hardware solutions for graph learning applications.

Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective

The memristor has recently demonstrated considerable potential in the field of large-scale data information processing. Metal halide perovskites (MHPs) have emerged as the leading contenders for memristors due to their sensitive optoelectronic response, low power consumption, and ability to be prepared at low temperatures. This work presents a comprehensive enumeration and analysis of the predominant research advancements in mechanisms of resistance switch (RS) behaviors in MHPs-based memristors, along with a summary of useful characterization techniques. The impact of diverse optimization techniques on the functionality of perovskite memristors is examined and synthesized. Additionally, the potential of MHPs memristors in data processing, physical encryption devices, artificial synapses, and brain-like computing advancement of MHPs memristors is evaluated. This review can prove a valuable reference point for the future development of perovskite memristors applications. In conclusion, the current challenges and prospects of MHPs-based memristors are discussed in order to provide insights into potential avenues for the development of next-generation information storage technologies and biomimetic applications.

Dynamic FeOx/FeWOx nanocomposite memristor for neuromorphic and reservoir computing

Memristors are crucial in computing due to their potential for miniaturization, energy efficiency, and rapid switching, making them particularly suited for advanced applications such as neuromorphic computing and in-memory operations. However, these tasks often require different operational modes-volatile or nonvolatile. This study introduces a forming-free Ag/FeOx/FeWOx/Pt nanocomposite memristor capable of both operational modes, achieved through compliance current (CC) adjustment and structural engineering. Volatile switching occurs at low CC levels (<500 μA), transitioning to nonvolatile at higher levels (mA). Operating at extremely low voltages (<0.2 V), this memristor exhibits excellent uniformity, data retention, and multilevel switching, making it highly suitable for high-density data storage. The memristor successfully mimics fundamental biological synapse functions, exhibiting potentiation, depression, and spike-rate dependent plasticity (SRDP). It effectively emulates transitions from short-term memory (STM) to long-term memory (LTM) by varying pulse characteristics. Leveraging its volatile switching and STM features, the memristor proves ideal for reservoir computing (RC), where it can emulate dynamic reservoirs for sequence data classification. A physical RC system, implemented using digits 0 to 9, achieved a recognition rate of 93.4% in off-chip training with a deep neural network (DNN), confirming the memristor's effectiveness. Overall, the dual-mode switching capability of the Ag/FeOx/FeWOx/Pt memristor enhances its potential for AI applications, particularly in temporal and sequential data processing.

Hyperplane tree-based data mining with a multi-functional memristive crossbar array

This study explores the stochastic and binary switching behaviors of a Ta/HfO2/RuO2 memristor to implement a combined data mining approach for outlier detection and data clustering algorithms in a multi-functional memristive crossbar array. The memristor switches stochastically with high state dispersion in the stochastic mode and deterministically between two states with low dispersion in the binary mode, while they can be controlled by varying operating voltages. The stochastic mode facilitates the parallel generation of random hyperplanes in a tree structure, used to compress spatial information of the dataset in the Euclidian space into binary format, still retaining sufficient spatial features. The ensemble effect from multiple trees improved the classification performance. The binary mode facilitates parallel Hamming distance calculation of the binary codes containing spatial information, which measures similarity. These two modes enable efficient implementation of the newly proposed minority-based outlier detection method and modified K-means method on the same hardware. Array measurements and hardware simulations investigate various hyperparameters' impact and validate the proposed methods with practical datasets. The proposed methods show linear O(n) time complexity and high energy efficiency, consuming <1% of the energy compared to digital computing with conventional algorithms while demonstrating software-comparable performance in both tasks.

Emerging 2D materials hardware for in-sensor computing

The advent of the novel in-sensor/near-sensor computing paradigm significantly eliminates the need for frequent data transfer between sensory terminals and processing units by integrating sensing and computing functions into a single device. This approach surpasses the traditional configuration of separate sensing and processing units, thereby greatly simplifying system complexity. Two-dimensional materials (2DMs) show immense promise for implementing in-sensor computing systems owing to their exceptional material properties and the flexibility they offer in designing innovative device architectures with heterostructures. This review highlights recent progress and advancements in 2DM-based in-sensor computing research, summarizing the unique physical mechanisms that can be leveraged in 2DM-based devices to achieve sensory responses and the essential biomimetic synaptic characteristics for computing functions. Additionally, the potential applications of 2DM-based in-sensor computing systems are discussed and categorized. This review concludes with a perspective on future development directions for 2DM-based in-sensor computing.

A dual-mode organic memristor for coordinated visual perceptive computing

The hierarchically coordinated processing of visual information with the data degradation characteristic embodies the energy consumption minimization and signal transmission efficiency maximization of brain activities. This inspires machine vision to handle the explosively increased data in real-time. In this contribution, we demonstrate the possibility of constructing a coordinated perceptive computing paradigm with dual-mode organic memristors to emulate the visual processing capability of the brain systems. The 32-state modulation of the device photoresponsivity and conductance via photo-induced molecular reconfiguration and electrochemical redox activities enables the execution of computing-in-sensor and computing-in-memory tasks, respectively, which in turn allows the homogeneous hardware integration of a single-layer perceptron and a convolutional neural network for high-efficiency hierarchical visual processing. Compared to the sole optoelectronic CIS mode to recognize visual targets, the dual-mode organic memristor-based coordinated computing scheme demonstrates a 24.5% improvement in the recognition accuracy and 45.8% reduction in the network size.

Analog reservoir computing via ferroelectric mixed phase boundary transistors

Analog reservoir computing (ARC) systems have attracted attention owing to their efficiency in processing temporal information. However, the distinct functionalities of the system components pose challenges for hardware implementation. Herein, we report a fully integrated ARC system that leverages material versatility of the ferroelectric-to-mixed phase boundary (MPB) hafnium zirconium oxides integrated onto indium-gallium-zinc oxide thin-film transistors (TFTs). MPB-based TFTs (MPBTFTs) with nonlinear short-term memory characteristics are utilized for physical reservoirs and artificial neuron, while nonvolatile ferroelectric TFTs mimic synaptic behavior for readout networks. Furthermore, double-gate configuration of MPBTFTs enhances reservoir state differentiation and state expansion for physical reservoir and processes both excitatory and inhibitory pulses for neuronal functionality with minimal hardware burden. The seamless integration of ARC components on a single wafer executes complex real-world time-series predictions with a low normalized root mean squared error of 0.28. The material-device co-optimization proposed in this study paves the way for the development of area- and energy-efficient ARC systems.

Organic Polymer-Based Photodiodes for Optoelectronic Reservoir Computing with Time-Based Coding

The integration of optoelectronic devices with reservoir computing offers a novel and effective approach to in-sensor computing. This work presents a hybrid digital-physical solution that leverages the high-performance poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)-3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) organic polymer-based photodiodes for the hardware implementation of reservoir computing system. The photodiodes demonstrate nonlinear photoelectric responses, fading memory, and cyclical stability, in relation to the temporal information on light stimuli. These attributes enable effective mapping, historical context sensitivity, and consistent performance, with time-encoded inputs, which are particularly essential for accurate and continuous processing of time series data. The optoelectronic reservoir computing system with pulse width modulation (PWM) coding demonstrates impressive performance in the prediction of chaotic sequences, achieving a normalized root-mean-square error as low as 0.095 with optimized parameters. The DPPT-TT-based photodiodes and time-based coding offer a hardware-efficient solution for reservoir computing, significantly advancing Internet of Things applications.

Reconfigurable Resistive Switching Memory for Telegraph Code Sensing and Recognizing Reservoir Computing Systems

Reservoir computing (RC) system is based upon the reservoir layer, which non-linearly transforms input signals into high-dimensional states, facilitating simple training in the readout layer-a linear neural network. These layers require different types of devices-the former demonstrated as diffusive memristors and the latter prepared as drift memristors. The integration of these components can increase the structural complexity of RC system. Here, a reconfigurable resistive switching memory (RSM) capable of implementing both diffusive and drift dynamics is demonstrated. This reconfigurability is achieved by preparing a medium with a 3D ion transport channel (ITC), enabling precise control of the metal filament that determines memristor operation. The 3D ITC-RSM operates in a volatile threshold switching (TS) mode under a weak electric field and exhibits short-term dynamics that are confirmed to be applicable as reservoir elements in RC systems. Meanwhile, the 3D ITC-RSM operates in a non-volatile bipolar switching (BS) mode under a strong electric field, and the conductance modulation metrics forming the basis of synaptic weight update are validated, which can be utilized as readout elements in the readout layer. Finally, an RC system is designed for the application of reconfigurable 3D ITC-RSM, and performs real-time recognition on Morse code datasets.

Heterogeneous density-based clustering with a dual-functional memristive array

In the big data era, the requirement for data clustering methods that can handle massive and heterogeneous datasets with varying distributions increases. This study proposes a clustering algorithm for data sets with heterogeneous density using a dual-mode memristor crossbar array for data clustering. The array consists of a Ta/HfO2/RuO2 memristor operating in analog or digital modes, controlled by the reset voltage. The digital mode shows low dispersion and a high resistance ratio, and the analog mode enables precise conductance tuning. The local outlier factor is introduced to handle a heterogeneous density, and the required Euclidean and K-distances within the given dataset are calculated in the analog mode in parallel. In the digital mode, clustering is performed based on the connectivity among data points after excluding the detected outliers. The proposed algorithm boasts linear time complexity for the entire process. Extensive evaluations of synthetic datasets demonstrate significant improvement over representative density-based algorithms, and the datasets with heterogeneous density are clustered feasibly. Finally, the proposed algorithm is used to cluster the single-molecule localization microscopy data, demonstrating the feasibility of the suggested method for real-world problems.

Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications

Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.

Tunable ion energy barrier modulation through aliovalent halide doping for reliable and dynamic memristive neuromorphic systems

Memristive neuromorphic computing has emerged as a promising computing paradigm for the upcoming artificial intelligence era, offering low power consumption and high speed. However, its commercialization remains challenging due to reliability issues from stochastic ion movements. Here, we propose an innovative method to enhance the memristive uniformity and performance through aliovalent halide doping. By introducing fluorine concentration into dynamic TiO2-x memristors, we experimentally demonstrate reduced device variations, improved switching speeds, and enhanced switching windows. Atomistic simulations of amorphous TiO2-x reveal that fluoride ions attract oxygen vacancies, improving the reversible redistribution and uniformity. A number of migration barrier calculations statistically show that fluoride ions also reduce the migration energies of nearby oxygen vacancies, facilitating ionic diffusion and high-speed switching. The detailed Voronoi volume analysis further suggests design principles in terms of the migrating species' electrostatic repulsion and migration barriers. This work presents an innovative methodology for the fabrication of reliable memristor devices, contributing to the realization of hardware-based neuromorphic systems.

2Memristor-1Capacitor Integrated Temporal Kernel for High-Dimensional Data Mapping

Compact but precise feature-extracting ability is core to processing complex computational tasks in neuromorphic hardware. Physical reservoir computing (RC) offers a robust framework to map temporal data into a high-dimensional space using the time dynamics of a material system, such as a volatile memristor. However, conventional physical RC systems have limited dynamics for the given material properties, restricting the methods to increase their dimensionality. This study proposes an integrated temporal kernel composed of a 2-memristor and 1-capacitor (2M1C) using a W/HfO2/TiN memristor and TiN/ZrO2/Al2O3/ZrO2/TiN capacitor to achieve higher dimensionality and tunable dynamics. The kernel elements are carefully designed and fabricated into an integrated array, of which performances are evaluated under diverse conditions. By optimizing the time dynamics of the 2M1C kernel, each memristor simultaneously extracts complementary information from input signals. The MNIST benchmark digit classification task achieves a high accuracy of 94.3% with a (196×10) single-layer network. Analog input mapping ability is tested with a Mackey-Glass time series prediction, and the system records a normalized root mean square error of 0.04 with a 20×1 readout network, the smallest readout network ever used for Mackey-Glass prediction in RC. These performances demonstrate its high potential for efficient temporal data analysis.

Few- and single-molecule reservoir computing experimentally demonstrated with surface-enhanced Raman scattering and ion gating

Molecule-based reservoir computing (RC) is promising for achieving low power consumption neuromorphic computing, although the information-processing capability of small numbers of molecules is not clear. Here, we report a few- and single-molecule RC that uses the molecular vibration dynamics in the para-mercaptobenzoic acid (pMBA) detected by surface-enhanced Raman scattering (SERS) with tungsten oxide nanorod/silver nanoparticles. The Raman signals of the pMBA molecules, adsorbed at the SERS active site of the nanorod, were reversibly perturbated by the application of voltage-induced local pH changes near the molecules, and then used to perform time-series analysis tasks. Despite the small number of molecules used, our system achieved good performance, including >95% accuracy in various nonlinear waveform transformations, 94.3% accuracy in solving a second-order nonlinear dynamic system, and a prediction error of 25.0 milligrams per deciliter in a 15-minute-ahead blood glucose level prediction. Our work provides a concept of few-molecular computing with practical computation capabilities.

Thin-film transistor for temporal self-adaptive reservoir computing with closed-loop architecture

Reservoir computing is a powerful neural network-based computing paradigm for spatiotemporal signal processing. Recently, physical reservoirs have been explored based on various electronic devices with outstanding efficiency. However, the inflexible temporal dynamics of these reservoirs have posed fundamental restrictions in processing spatiotemporal signals with various timescales. Here, we fabricated thin-film transistors with controllable temporal dynamics, which can be easily tuned with electrical operation signals and showed excellent cycle-to-cycle uniformity. Based on this, we constructed a temporal adaptive reservoir capable of extracting temporal information of multiple timescales, thereby achieving improved accuracy in the human-activity-recognition task. Moreover, by leveraging the former computing output to modify the hyperparameters, we constructed a closed-loop architecture that equips the reservoir computing system with temporal self-adaptability according to the current input. The adaptability is demonstrated by accurate real-time recognition of objects moving at diverse speed levels. This work provides an approach for reservoir computing systems to achieve real-time processing of spatiotemporal signals with compound temporal characteristics.

Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis

Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC). These characteristics are validated using a compact model to account for resistive switching (RS) via the dynamic evolution of the internal state variable and the relocation of oxygen vacancies. Mathematically, the transient current response can be quantitatively described according to a simple set of equations to correlate the theoretical framework with experimental results. Furthermore, the device shows significant reliability and ability to distinguish 4-bit inputs and four diverse neural firing patterns. Therefore, this work shows the feasibility of implementing physical reservoirs in hardware and advances the understanding of the dynamic response.

Brain-Inspired Reservoir Computing Using Memristors with Tunable Dynamics and Short-Term Plasticity

Recent advancements in reservoir computing (RC) research have created a demand for analogue devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates as information-processing devices or reservoirs for temporal classification and prediction tasks. Previous implementations relied on nominally identical memristors that applied the same nonlinear transformation to the input data, which is not enough to achieve a rich state space. To address this limitation, researchers either diversified the data encoding across multiple memristors or harnessed the stochastic device-to-device variability among the memristors. However, this approach requires additional preprocessing steps and leads to synchronization issues. Instead, it is preferable to encode the data once and pass them through a reservoir layer consisting of memristors with distinct dynamics. Here, we demonstrate that ion-channel-based memristors with voltage-dependent dynamics can be controllably and predictively tuned through the voltage or adjustment of the ion channel concentration to exhibit diverse dynamic properties. We show, through experiments and simulations, that reservoir layers constructed with a small number of distinct memristors exhibit significantly higher predictive and classification accuracies with a single data encoding. We found that for a second-order nonlinear dynamical system prediction task, the varied memristor reservoir experimentally achieved an impressive normalized mean square error of 1.5 × 10-3, using only five distinct memristors. Moreover, in a neural activity classification task, a reservoir of just three distinct memristors experimentally attained an accuracy of 96.5%. This work lays the foundation for next-generation physical RC systems that can exploit the complex dynamics of their diverse building blocks to achieve increased signal processing capabilities.

Reservoir Computing With Dynamic Reservoir using Cascaded DNA Memristors

This article proposes molecular and DNA memristors where the state is defined by a single output variable. In past molecular and DNA memristors, the state of the memristor was defined based on two output variables. These memristors cannot be cascaded because their input and output sizes are different. We introduce a different definition of state for the molecular and DNA memristors. This change allows cascading of memristors. The proposed memristors are used to build reservoir computing (RC) models that can process temporal inputs. An RC system consists of two parts: reservoir and readout layer. The first part projects the information from the input space into a high-dimensional feature space. We also study the input-state characteristics of the cascaded memristors and show that the cascaded memristors retain the memristive behavior. The cascade connections in a reservoir can change dynamically; this allows the synthesis of a dynamic reservoir as opposed to a static one in the prior work. This reduces the number of memristors significantly compared to a static reservoir. The inputs to the readout layer correspond to one molecule per state instead of two; this significantly reduces the number of molecular and DSD reactions for the readout layer. A DNA RC system consisting of DNA memristors and a DNA readout layer is used to detect seizures from intra-cranial electroencephalogram (iEEG). We also demonstrate that a DNA RC system consisting of three cascaded DNA memristors and a DNA readout layer can be used to solve the time-series prediction task. The proposed approach can reduce the number of DNA strand displacement (DSD) reactions by three to five times compared to prior approaches.

Memristor-Based Artificial Chips

Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.

Redox-based ion-gating reservoir consisting of (104) oriented LiCoO2 film, assisted by physical masking

Reservoir computing (RC) is a machine learning framework suitable for processing time series data, and is a computationally inexpensive and fast learning model. A physical reservoir is a hardware implementation of RC using a physical system, which is expected to become the social infrastructure of a data society that needs to process vast amounts of information. Ion-gating reservoirs (IGR) are compact and suitable for integration with various physical reservoirs, but the prediction accuracy and operating speed of redox-IGRs using WO3 as the channel are not sufficient due to irreversible Li+ trapping in the WO3 matrix during operation. Here, in order to enhance the computation performance of redox-IGRs, we developed a redox-based IGR using a (104) oriented LiCoO2 thin film with high electronic and ionic conductivity as a trap-free channel material. The subject IGR utilizes resistance change that is due to a redox reaction (LiCoO2 ⟺ Li1-xCoO2 + xLi+ + xe-) with the insertion and desertion of Li+. The prediction error in the subject IGR was reduced by 72% and the operation speed was increased by 4 times compared to the previously reported WO3, which changes are due to the nonlinear and reversible electrical response of LiCoO2 and the high dimensionality enhanced by a newly developed physical masking technique. This study has demonstrated the possibility of developing high-performance IGRs by utilizing materials with stronger nonlinearity and by increasing output dimensionality.

Adjustable short-term memory of SiOx:Ag-based memristor for reservoir computing

Temporal information processing is critical for a wide spectrum of applications, such as finance, biomedicine, and engineering. Reservoir computing (RC) can efficiently process temporal information with low training costs. Various memristors have been explored to demonstrate RC systems leveraging the short-term memory and nonlinear dynamic behaviours. However, the short-term memory is fixed after the device fabrication, limiting the applications to diverse temporal analysis tasks. In this work, we propose the approaches to modulating the short-term memory of Pt/SiOx:Ag/Pt memristor for the performance improvement of the RC systems. By controlling the read voltage, pulse amplitude and pulse width applied to the devices, the obtainable range of the characteristic time reaches three orders of magnitude from microseconds to around milliseconds. Based on the fabricated memristor, the classification of 4-bit pulse streams is demonstrated. Memristor-based RC systems with adjustable short-term memory are constructed for time-series prediction and pattern recognition tasks with different requirements for the characteristic times. The simulation results show that low normalized root mean square error of 0.003 (0.27) in Hénon map (Mackey-Glass time series) and excellent classification accuracy of 99.6% (91.7%) in spoken-digit recognition (MNIST image recognition) are achieved, which outperforms most memristor-based RC systems recently reported. Furthermore, the RC networks with diverse short-term memories are constructed to address more complicated tasks with low prediction errors. This work proves the high controllability of memristor-based RC systems to handle multiple temporal processing tasks.

Generative complex networks within a dynamic memristor with intrinsic variability

Artificial neural networks (ANNs) have gained considerable momentum in the past decade. Although at first the main task of the ANN paradigm was to tune the connection weights in fixed-architecture networks, there has recently been growing interest in evolving network architectures toward the goal of creating artificial general intelligence. Lagging behind this trend, current ANN hardware struggles for a balance between flexibility and efficiency but cannot achieve both. Here, we report on a novel approach for the on-demand generation of complex networks within a single memristor where multiple virtual nodes are created by time multiplexing and the non-trivial topological features, such as small-worldness, are generated by exploiting device dynamics with intrinsic cycle-to-cycle variability. When used for reservoir computing, memristive complex networks can achieve a noticeable increase in memory capacity a and respectable performance boost compared to conventional reservoirs trivially implemented as fully connected networks. This work expands the functionality of memristors for ANN computing.

All-Optical Data Processing with Photon-Avalanching Nanocrystalline Photonic Synapse

Data processing and storage in electronic devices are typically performed as a sequence of elementary binary operations. Alternative approaches, such as neuromorphic or reservoir computing, are rapidly gaining interest where data processing is relatively slow, but can be performed in a more comprehensive way or massively in parallel, like in neuronal circuits. Here, time-domain all-optical information processing capabilities of photon-avalanching (PA) nanoparticles at room temperature are discovered. Demonstrated functionality resembles properties found in neuronal synapses, such as: paired-pulse facilitation and short-term internal memory, in situ plasticity, multiple inputs processing, and all-or-nothing threshold response. The PA-memory-like behavior shows capability of machine-learning-algorithm-free feature extraction and further recognition of 2D patterns with simple 2 input artificial neural network. Additionally, high nonlinearity of luminescence intensity in response to photoexcitation mimics and enhances spike-timing-dependent plasticity that is coherent in nature with the way a sound source is localized in animal neuronal circuits. Not only are yet unexplored fundamental properties of photon-avalanche luminescence kinetics studied, but this approach, combined with recent achievements in photonics, light confinement and guiding, promises all-optical data processing, control, adaptive responsivity, and storage on photonic chips.

Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges

Artificial neurons and synapses are considered essential for the progress of the future brain-inspired computing, based on beyond von Neumann architectures. Here, a discussion on the common electrochemical fundamentals of biological and artificial cells is provided, focusing on their similarities with the redox-based memristive devices. The driving forces behind the functionalities and the ways to control them by an electrochemical-materials approach are presented. Factors such as the chemical symmetry of the electrodes, doping of the solid electrolyte, concentration gradients, and excess surface energy are discussed as essential to understand, predict, and design artificial neurons and synapses. A variety of two- and three-terminal memristive devices and memristive architectures are presented and their application for solving various problems is shown. The work provides an overview of the current understandings on the complex processes of neural signal generation and transmission in both biological and artificial cells and presents the state-of-the-art applications, including signal transmission between biological and artificial cells. This example is showcasing the possibility for creating bioelectronic interfaces and integrating artificial circuits in biological systems. Prospectives and challenges of the modern technology toward low-power, high-information-density circuits are highlighted.

A high linearity and multilevel polymer-based conductive-bridging memristor for artificial synapses

Conductive-bridging memristors based on a metal ion redox mechanism have good application potential in future neuromorphic computing nanodevices owing to their high resistance switch ratio, fast operating speed, low power consumption and small size. Conductive-bridging memristor devices rely on the redox reaction of metal ions in the dielectric layer to form metal conductive filaments to control the conductance state. However, the migration of metal ions is uncontrollable by the applied bias, resulting in the random generation of conductive filaments, and the conductance state is difficult to accurately control. Herein, we report an organic polymer carboxylated chitosan-based memristor doped with a small amount of the conductive polymer PEDOT:PSS to improve the polymer ionic conductivity and regulate the redox of metal ions. The resulting device exhibits uniform conductive filaments during device operation, more than 100 and non-volatile conductance states with a ∼1 V range, and linear conductance regulation. Moreover, simulation using handwritten digital datasets shows that the recognition accuracy of the carboxylated chitosan-doped PEDOT:PSS memristor array can reach 93%. This work provides a path to facilitate the performance of metal ion-based memristors in artificial synapses.

Interfacing Biology and Electronics with Memristive Materials

Memristive technologies promise to have a large impact on modern electronics, particularly in the areas of reconfigurable computing and artificial intelligence (AI) hardware. Meanwhile, the evolution of memristive materials alongside the technological progress is opening application perspectives also in the biomedical field, particularly for implantable and lab-on-a-chip devices where advanced sensing technologies generate a large amount of data. Memristive devices are emerging as bioelectronic links merging biosensing with computation, acting as physical processors of analog signals or in the framework of advanced digital computing architectures. Recent developments in the processing of electrical neural signals, as well as on transduction and processing of chemical biomarkers of neural and endocrine functions, are reviewed. It is concluded with a critical perspective on the future applicability of memristive devices as pivotal building blocks in bio-AI fusion concepts and bionic schemes.

All-ferroelectric implementation of reservoir computing

Reservoir computing (RC) offers efficient temporal information processing with low training cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the merits of ferroelectric memristors (e.g., good controllability); however, this has been undemonstrated due to the challenge of developing ferroelectric memristors with distinctly different switching characteristics specific to the reservoir and readout network. Here, we experimentally demonstrate an all-ferroelectric RC system whose reservoir and readout network are implemented with volatile and nonvolatile ferroelectric diodes (FDs), respectively. The volatile and nonvolatile FDs are derived from the same Pt/BiFeO₃/SrRuO₃ structure via the manipulation of an imprint field (E_imp). It is shown that the volatile FD with E_imp exhibits short-term memory and nonlinearity while the nonvolatile FD with negligible E_imp displays long-term potentiation/depression, fulfilling the functional requirements of the reservoir and readout network, respectively. Hence, the all-ferroelectric RC system is competent for handling various temporal tasks. In particular, it achieves an ultralow normalized root mean square error of 0.017 in the Hénon map time-series prediction. Besides, both the volatile and nonvolatile FDs demonstrate long-term stability in ambient air, high endurance, and low power consumption, promising the all-ferroelectric RC system as a reliable and low-power neuromorphic hardware for temporal information processing.

Experimental Demonstration of In-Memory Computing in a Ferrofluid System

Magnetic fluids are excellent candidates for several important research fields including energy harvesting, biomedical applications, soft robotics, and exploration. However, notwithstanding relevant advancements such as shape reconfigurability, that have been demonstrated, there is no evidence for their computing capability, including the emulation of synaptic functions, which requires complex non-linear dynamics. Here, it is experimentally demonstrated that a Fe₃ O₄ water-based ferrofluid (FF) can perform electrical analogue computing and be programmed using quasi direct current (DC) signals and read at radio frequency (RF) mode. Features have been observed in all respects attributable to a memristive behavior, featuring both short and long-term information storage capacity and plasticity. The colloid is capable of classifying digits of a 8 × 8 pixel dataset using a custom in-memory signal processing scheme, and through physical reservoir computing by training a readout layer. These findings demonstrate the feasibility of in-memory computing using an amorphous FF system in a liquid aggregation state. This work poses the basis for the exploitation of a FF colloid as both an in-memory computing device and as a full-electric liquid computer thanks to its fluidity and the reported complex dynamics, via probing read-out and programming ports.

Near-Sensor Reservoir Computing for Gait Recognition via a Multi-Gate Electrolyte-Gated Transistor

The recent emergence of various smart wearable electronics has furnished the rapid development of human-computer interaction, medical health monitoring technologies, etc. Unfortunately, processing redundant motion and physiological data acquired by multiple wearable sensors using conventional off-site digital computers typically result in serious latency and energy consumption problems. In this work, a multi-gate electrolyte-gated transistor (EGT)-based reservoir device for efficient multi-channel near-sensor computing is reported. The EGT, exhibiting rich short-term dynamics under voltage modulation, can implement nonlinear parallel integration of the time-series signals thus extracting the temporal features such as the synchronization state and collective frequency in the inputs. The flexible EGT integrated with pressure sensors can perform on-site gait information analysis, enabling the identification of motion behaviors and Parkinson's disease. This near-sensor reservoir computing system offers a new route for rapid analysis of the motion and physiological signals with significantly improved efficiency and will lead to robust smart flexible wearable electronics.

Research progress in architecture and application of RRAM with computing-in-memory

The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit. The dominant system architecture is the von Neumann architecture, with the processing and storage units working independently. The data migrate between them via buses, reducing computing speed and increasing energy loss. Research is underway to increase computing power, such as developing new chips and adopting new system architectures. Computing-in-memory (CIM) technology allows data to be computed directly on the memory, changing the current computation-centric architecture and designing a new storage-centric architecture. Resistive random access memory (RRAM) is one of the advanced memories which has appeared in recent years. RRAM can change its resistance with electrical signals at both ends, and the state will be preserved after power-down. It has potential in logic computing, neural networks, brain-like computing, and fused technology of sense-storage-computing. These advanced technologies promise to break the performance bottleneck of traditional architectures and dramatically increase computing power. This paper introduces the basic concepts of computing-in-memory technology and the principle and applications of RRAM and finally gives a conclusion about these new technologies.

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

Neuromorphic systems built from memristors that emulate bioelectrical information processing in the brain may overcome the limitations of traditional computing architectures. However, functional emulation alone may still not attain all the merits of bio-computation, which uses action potentials of 50-120 mV at least 10 times lower than signal amplitude in conventional electronics to achieve extraordinary power efficiency and effective functional integration. Reducing the functional voltage in memristors to this biological amplitude can thus advance neuromorphic engineering and bio-emulated integration. This review aims to provide a timely update on the effort and progress in this burgeoning research direction, covering the aspects of device material composition, performance, working mechanism, and potential application.

Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes

Active cation-based diffusive memristors featuring essentially volatile threshold switching have been proposed for novel applications, such as a selector in a one-selector-and-one-resistor structure and signal generators in neuromorphic computing. However, the high variability of the switching behavior, which results from the high electroforming voltage, external environmental conditions, and transition to the non-volatile switching mode in a high-current range, is considered a major impediment to such applications. Herein, for the first time, we developed a highly reliable threshold switching device immune to atmospheric changes based on an ultraviolet-ozone (UVO)-treated diffusive memristor consisting of Ag and SiO₂ nanorods (NRs). UVO treatment forms a stable water reservoir on the surface of SiO₂ NRs, facilitating the redox reaction and ion migration of Ag. Consequently, diffusive memristors possess reliable switching characteristics, including electroforming-free, repeatable, and consistent switching with resistance to changes in ambient conditions and compliance levels during operation. We demonstrated that our approach is suitable for various metal oxides and can be used in numerous applications.

In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors

Since memristors as an emerging nonlinear electronic component have been considered the most promising candidate for integrating nonvolatile memory and advanced computing technology, the in-depth reveal of the memristive mechanism and the realization of hardware fabrication have facilitated their wide applications in next-generation artificial intelligence. Flexible memristors have shown great promising prospects in wearable electronics and artificial electronic skin (e-skin), but in-depth research on the physical mechanism is still lacking. Here, a flexible memristive device with a Ag/HfO_x/Ti/PET crossbar structure was fabricated, and a remarkable analog switching characteristic similar to synaptic behavior was observed. Through detailed data fitting and in-depth physical mechanism analysis, it is confirmed that the analog switching characteristics of the device are mainly caused by carrier tunneling. Furthermore, the memristive properties of the Ag/HfO_x/Ag/PET device can be attributed to the conductive filaments formed by the redox reaction of the active metal Ag. Finally, the interfacial barrier is extracted by the Arrhenius diagram and the energy band diagram, which is drawn to clearly demonstrate the conduction mechanism of charge trapping in the device. Therefore, the HfO_x-based flexible memristor with analog switching behavior and stable memory performance lays the foundation for cutting-edge applications in wearable electronics and smart e-skin.

SpaRCe: Improved Learning of Reservoir Computing Systems Through Sparse Representations

"Sparse" neural networks, in which relatively few neurons or connections are active, are common in both machine learning and neuroscience. While, in machine learning, "sparsity" is related to a penalty term that leads to some connecting weights becoming small or zero, in biological brains, sparsity is often created when high spiking thresholds prevent neuronal activity. Here, we introduce sparsity into a reservoir computing network via neuron-specific learnable thresholds of activity, allowing neurons with low thresholds to contribute to decision-making but suppressing information from neurons with high thresholds. This approach, which we term "SpaRCe," optimizes the sparsity level of the reservoir without affecting the reservoir dynamics. The read-out weights and the thresholds are learned by an online gradient rule that minimizes an error function on the outputs of the network. Threshold learning occurs by the balance of two opposing forces: reducing interneuronal correlations in the reservoir by deactivating redundant neurons, while increasing the activity of neurons participating in correct decisions. We test SpaRCe on classification problems and find that threshold learning improves performance compared to standard reservoir computing. SpaRCe alleviates the problem of catastrophic forgetting, a problem most evident in standard echo state networks (ESNs) and recurrent neural networks in general, due to increasing the number of task-specialized neurons that are included in the network decisions.

An artificial synapse based on molecular junctions

Shrinking the size of the electronic synapse to molecular length-scale, for example, an artificial synapse directly fabricated by using individual or monolayer molecules, is important for maximizing the integration density, reducing the energy consumption, and enabling functionalities not easily achieved by other synaptic materials. Here, we show that the conductance of the self-assembled peptide molecule monolayer could be dynamically modulated by placing electrical biases, enabling us to implement basic synaptic functions. Both short-term plasticity (e.g., paired-pulse facilitation) and long-term plasticity (e.g., spike-timing-dependent plasticity) are demonstrated in a single molecular synapse. The dynamic current response is due to a combination of both chemical gating and coordination effects between Ag⁺ and hosting groups within peptides which adjusts the electron hopping rate through the molecular junction. In the end, based on the nonlinearity and short-term synaptic characteristics, the molecular synapses are utilized as reservoirs for waveform recognition with 100% accuracy at a small mask length.

A Perovskite Memristor with Large Dynamic Space for Analog-Encoded Image Recognition

Reservoir computing (RC) is a computational architecture capable of efficiently processing temporal information, which allows low-cost hardware implementation. However, the previously reported memristor-based RC mostly utilized binarized data sets to reduce the difficulty of signal processing of the memristor, which inevitably induces data distortion to a certain extent, leading to poor network computing performance. Here, we report on a RC system in a fully memristive architecture based on solution-processed perovskite memristors. The perovskite memristor exhibits 10000 conductance states with a modulation range of more than 4 orders of magnitude. The obtained tens of thousands of finely spaced conductance states with a near-ideal analog property provide a sufficiently large dynamic range and enough intermediate states, which were further applied as a reservoir to map the feature information on different sequential inputs in an analog way. The computing capability of the image classification task of a Fashion-MNIST data set with a high recognition accuracy of up to 90.1% shows that the excellent analog and short-term properties of our perovskite memristor allow the hardware implementation of neuromorphic computing with a reduced training cost.

Edge-of-chaos learning achieved by ion-electron-coupled dynamics in an ion-gating reservoir

Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li⁺ electrolyte-based ion-gating reservoir (IGR), with ion-electron-coupled dynamics, for use in high-performance physical reservoir computing. A variety of synaptic responses were obtained in response to past experience, which were stored as transient charge density patterns in an electric double layer, at the Li⁺ electrolyte/diamond interface. Performance for a second-order nonlinear dynamical equation task is one order of magnitude higher than memristor-based reservoirs. The edge-of-chaos state of the IGR enabled the best computational capacity. The IGR described here opens the way for high-performance and integrated neural network devices.

Leveraging plant physiological dynamics using physical reservoir computing

Plants are complex organisms subject to variable environmental conditions, which influence their physiology and phenotype dynamically. We propose to interpret plants as reservoirs in physical reservoir computing. The physical reservoir computing paradigm originates from computer science; instead of relying on Boolean circuits to perform computations, any substrate that exhibits complex non-linear and temporal dynamics can serve as a computing element. Here, we present the first application of physical reservoir computing with plants. In addition to investigating classical benchmark tasks, we show that Fragaria × ananassa (strawberry) plants can solve environmental and eco-physiological tasks using only eight leaf thickness sensors. Although the results indicate that plants are not suitable for general-purpose computation but are well-suited for eco-physiological tasks such as photosynthetic rate and transpiration rate. Having the means to investigate the information processing by plants improves quantification and understanding of integrative plant responses to dynamic changes in their environment. This first demonstration of physical reservoir computing with plants is key for transitioning towards a holistic view of phenotyping and early stress detection in precision agriculture applications since physical reservoir computing enables us to analyse plant responses in a general way: environmental changes are processed by plants to optimise their phenotype.

Advances in Emerging Photonic Memristive and Memristive-Like Devices

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

Anion-Exchange Driven Phase Transition in CsPbI3 Nanowires for Fabricating Epitaxial Perovskite Heterojunctions

Anion-exchange in halide perovskites provides a unique pathway of bandgap engineering for fabricating heterojunctions in low-cost photovoltaics and optoelectronics. However, it remains challenging to achieve robust and sharp perovskite heterojunctions, due to the spontaneous anion interdiffusion across the heterojunction in 3D perovskites. Here, it is shown that the anionic behavior in 1D perovskites is fundamentally different, that the anion exchange can readily drive an indirect-to-direct bandgap phase transition in CsPbI₃ nanowires (NWs) and greatly lower the phase transition temperature. In addition, the heterojunction created by phase transition is epitaxial in nature, and its chemical composition can be precisely controlled upon postannealing. Further study of the phase transition dynamics reveals a threshold-dominating anion exchange mechanism in these 1D NWs rather than the gradient-dominating mechanism in 3D systems. The results provide important insights into the ionic behavior in halide perovskites, which is beneficial for applications in solar cells, light-emitting diodes (LEDs), and other semiconductor devices.

Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System

The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag⁺ between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed.

In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks

Neuromorphic computing aims at the realization of intelligent systems able to process information similarly to our brain. Brain-inspired computing paradigms have been implemented in crossbar arrays of memristive devices; however, this approach does not emulate the topology and the emergent behaviour of biological neuronal circuits, where the principle of self-organization regulates both structure and function. Here, we report on in materia reservoir computing in a fully memristive architecture based on self-organized nanowire networks. Thanks to the functional synaptic connectivity with nonlinear dynamics and fading memory properties, the designless nanowire complex network acts as a network-wide physical reservoir able to map spatio-temporal inputs into a feature space that can be analysed by a memristive resistive switching memory read-out layer. Computing capabilities, including recognition of spatio-temporal patterns and time-series prediction, show that the emergent memristive behaviour of nanowire networks allows in materia implementation of brain-inspired computing paradigms characterized by a reduced training cost.

Artificial Adaptive and Maladaptive Sensory Receptors Based on a Surface-Dominated Diffusive Memristor

A biological receptor serves as sensory transduction from an external stimulus to an electrical signal. It allows humans to better match the environment by filtering out repetitive innocuous information and recognize potentially damaging stimuli through key features, including adaptive and maladaptive behaviors. Herein, for the first time, the authors develop substantial artificial receptors involving both adaptive and maladaptive behaviors using diffusive memristor. Metal-oxide nanorods (NR) as a switching matrix enable the electromigration of an active metal along the surface of the NRs under electrical stimulation, resulting in unique surface-dominated switching dynamics with the advantage of fast Ag migration and fine controllability of the conductive filament. To experimentally demonstrate its potential application, a thermoreceptor system is constructed using memristive artificial receptors. The proposed surface-dominated diffusive memristor allows the direct emulation of the biological receptors, which represents an advance in the bioinspired technology adopted in creating artificial intelligence systems.

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Ion-based memristive switching has attracted widespread attention from industries owing to its outstanding advantages in storage and neuromorphic computing. Major issues for achieving brain-inspired computation of highly functional memory in redox-based ion devices are relatively large variability in their operating parameters and limited cycling endurance. In some devices, volatile and nonvolatile operations often replace each other without changing operating conditions. To address these issues, it is important to observe directly what is happening in repeated operations. Herein, we use a planar device that enables direct capturing of microscopic behaviors in the nucleation and growth of metal whiskers under repeated switching to verify the microscopic origin of the large parameter variability. We report direct observations that reveal the physical origin for the large cycle-to-cycle and device-to-device variability in memristive switching, which was achieved using planar polymer atomic switches with a gap >1 μm. We find that the deposition location of metal atoms is closely related to the crystallinity of the ion transport layer (solid polymer electrolyte, SPE). The filament variability (shape, position, quantity, etc.) during different cycles and devices is indeed the main reason for the observed variability in the operating characteristics. The results shed unique light on the complexity of the operation of the ion device, that is, the evolution of the dielectric layer and metal filament must be considered.

Emerging dynamic memristors for neuromorphic reservoir computing

Reservoir computing (RC), as a brain-inspired neuromorphic computing algorithm, is capable of fast and energy-efficient temporal data analysis and prediction. Hardware implementation of RC systems can significantly reduce the computing time and energy, but it is hindered by current physical devices. Recently, dynamic memristors have proved to be promising for hardware implementation of such systems, benefiting from their fast and low-energy switching, nonlinear dynamics, and short-term memory behavior. In this work, we review striking results that leverage dynamic memristors to enhance the data processing abilities of RC systems based on resistive switching devices and magnetoresistive devices. The critical characteristic parameters of memristors affecting the performance of RC systems, such as reservoir size and decay time, are identified and discussed. Finally, we summarize the challenges this field faces in reliable and accurate task processing, and forecast the future directions of RC systems.