1
|
Sutter E, Ghimire P, Sutter P. Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures. ACS NANO 2024. [PMID: 39439076 DOI: 10.1021/acsnano.4c11341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2024]
Abstract
Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe-SnS flakes. The combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.
Collapse
Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Pramod Ghimire
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| |
Collapse
|
2
|
Wang W, Luo W, Zhang S, Zeng C, Xie F, Deng C, Wang G, Peng G. Reversible Tuning Electrical Properties in Ferroelectric SnS with NH 3 Adsorption and Desorption. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1638. [PMID: 39452974 PMCID: PMC11510606 DOI: 10.3390/nano14201638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2024] [Accepted: 10/09/2024] [Indexed: 10/26/2024]
Abstract
Two-dimensional (2D) ferroelectrics usually exhibit instability or a tendency toward degradation when exposed to the ambient atmosphere, and the mechanism behind this phenomenon remains unclear. To unravel this affection mechanism, we have undertaken an investigation utilizing NH3 and two-dimensional ferroelectric SnS. Herein, the adsorption and desorption of NH3 molecules can reversibly modulate the electrical properties of SnS, encompassing I-V curves and transfer curves. The response time for NH3 adsorption is approximately 1.12 s, which is much quicker than that observed in other two-dimensional materials. KPFM characterizations indicate that air molecules' adsorption alters the surface potentials of SiO2, SnS, metal electrodes, and contacts with minimal impact on the electrode contact surface potential. Upon the adsorption of NH3 molecules or air molecules, the hole concentration within the device decreases. These findings elucidate the adsorption mechanism of NH3 molecules on SnS, potentially fostering the advancement of rapid gas sensing applications utilizing two-dimensional ferroelectrics.
Collapse
Affiliation(s)
| | - Wei Luo
- Correspondence: (W.L.); (G.P.)
| | | | | | | | | | | | - Gang Peng
- College of Science, National University of Defense Technology, Changsha 410073, China; (W.W.); (S.Z.); (C.Z.); (F.X.); (C.D.); (G.W.)
| |
Collapse
|
3
|
de Sousa DJP, Lee S, Lu Q, Moore RG, Brahlek M, Wang JP, Bian G, Low T. Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents. PHYSICAL REVIEW LETTERS 2024; 133:146605. [PMID: 39423395 DOI: 10.1103/physrevlett.133.146605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Accepted: 08/23/2024] [Indexed: 10/21/2024]
Abstract
We show that proximity effects can be utilized to engineer van der Waals heterostructures (vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and semimetallic spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations involving α-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable nonlinear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis and first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.
Collapse
|
4
|
Gao H, Liu Z, Gong Y, Ke C, Guo N, Wu J, Zeng X, Guo J, Li S, Cheng Z, Li J, Zhu H, Zhang LZ, Liu X, Liu S, Xie L, Zheng Q. Picometer-Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404628. [PMID: 39367557 DOI: 10.1002/adma.202404628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 09/26/2024] [Indexed: 10/06/2024]
Abstract
Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next-generation nanoelectronics and in-memory computing with polarization-dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple-layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub-angstrom resolution imaging and in situ biasing in an aberration-corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer-level intralayer sliding is responsible for switchable out-of-plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.
Collapse
Affiliation(s)
- Hanbin Gao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Ziyuan Liu
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yue Gong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Changming Ke
- Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Ning Guo
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xin Zeng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jianfeng Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Songyang Li
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Zhihai Cheng
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Jiawei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100190, China
| | - Hongwei Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100190, China
| | - Li-Zhi Zhang
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shi Liu
- Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
5
|
Kim JH, Kim SH, Yu HY. Enhanced Electrical Polarization in van der Waals α-In 2Se 3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405459. [PMID: 39358931 DOI: 10.1002/smll.202405459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 09/18/2024] [Indexed: 10/04/2024]
Abstract
A van der Waals (vdW) α-In2Se3 ferroelectric semiconductor channel-based field-effect transistor (FeS-FET) has emerged as a next-generation electronic device owing to its versatility in various fields, including neuromorphic computing, nonvolatile memory, and optoelectronics. However, screening charges cause by the imperfect surface morphology of vdW α-In2Se3 inhibiting electrical polarization remain an unresolved issue. In this study, for the first time, a method is elucidated to recover the inherent electric polarization in both in- and out-of-plane directions of the α-In2Se3 channel based on post-exfoliation annealing (PEA) and improve the electrical performance of vdW FeS-FETs. Following PEA, an ultra-thin In2Se3-3xO3x layer formed on the top surface of the α-In2Se3 channel is demonstrated to passivate surface defects and enhance the electrical performance of FeS-FETs. The on/off current ratio of the α-In2Se3 FeS-FET has increased from 5.99 to 1.84 × 106, and the magnitude of ferroelectric resistance switching has increased from 1.20 to 26.01. Moreover, the gate-modulated artificial synaptic operation of the α-In2Se3 FeS-FET is demonstrated and illustrate the significance of the engineered interface in the vdW FeS-FET for its application to multifunctional devices. The proposed α-In2Se3 FeS-FET is expected to provide a significant breakthrough for advanced memory devices and neuromorphic computing.
Collapse
Affiliation(s)
- Jong-Hyun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
| |
Collapse
|
6
|
Tsang CS, Zheng X, Ly TH, Zhao J. Recent progresses in transmission electron microscopy studies of two-dimensional ferroelectrics. Micron 2024; 185:103678. [PMID: 38941681 DOI: 10.1016/j.micron.2024.103678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 06/03/2024] [Accepted: 06/13/2024] [Indexed: 06/30/2024]
Abstract
The rich potential of two-dimensional materials endows them with superior properties suitable for a wide range of applications, thereby attracting substantial interest across various fields. The ongoing trend towards device miniaturization aligns with the development of materials at progressively smaller scales, aiming to achieve higher integration density in electronics. In the realm of nano-scaling ferroelectric phenomena, numerous new two-dimensional ferroelectric materials have been predicted theoretically and subsequently validated through experimental confirmation. However, the capabilities of conventional tools, such as electrical measurements, are limited in providing a comprehensive investigation into the intrinsic origins of ferroelectricity and its interactions with structural factors. These factors include stacking, doping, functionalization, and defects. Consequently, the progress of potential applications, such as high-density memory devices, energy conversion systems, sensing technologies, catalysis, and more, is impeded. In this paper, we present a review of recent research that employs advanced transmission electron microscopy (TEM) techniques for the direct visualization and analysis of ferroelectric domains, domain walls, and other crucial features at the atomic level within two-dimensional materials. We discuss the essential interplay between structural characteristics and ferroelectric properties on the nanoscale, which facilitates understanding of the complex relationships governing their behavior. By doing so, we aim to pave the way for future innovative applications in this field.
Collapse
Affiliation(s)
- Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China; Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, China; City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China; The Research Institute for Advanced Manufacturing, The Hong Kong polytechnic University, Hong Kong, China.
| |
Collapse
|
7
|
Fang Y, Liu Y, Yang N, Wang G, He W, Zhou X, Xia S, Wang D, Fu J, Wang J, Ding Y, Yu T, Xu C, Zhen L, Lin J, Gou G, Li Y, Huang F. Above-Room-Temperature Ferroelectricity and Giant Second Harmonic Generation in 1D vdW NbOI 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2407249. [PMID: 39194637 DOI: 10.1002/adma.202407249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2024] [Revised: 07/21/2024] [Indexed: 08/29/2024]
Abstract
The realization of spontaneous ferroelectricity down to the one-dimensional (1D) limit is both fundamentally intriguing and practically appealing for high-density ferroelectric and nonlinear photonics. However, the 1D vdW ferroelectric materials are not discovered experimentally yet. Here, the first 1D vdW ferroelectric compound NbOI3 with a high Curie temperature TC > 450 K and giant second harmonic generation (SHG) is reported. The 1D crystalline chain structure of the NbOI3 is revealed by cryo-electron microscopy, whereas the 1D ferroelectric order originated from the Nb displacement along the Nb-O chain (b-axis) is confirmed via obvious electrical and ferroelectric hysteresis loops. Impressively, NbOI3 exhibits a giant SHG susceptibility up to 1572 pm V-1 at a fundamental wavelength of 810 nm, and a further enhanced SHG susceptibility of 5582 pm V-1 under the applied hydrostatic pressure of 2.06 GPa. Combing in situ pressure-dependent X-ray diffraction, Raman spectra measurements, and first-principles calculations, it is demonstrated that the O atoms shift along the Nb─O atomic chain under compression, which can lead to the increased Baur distortion of [NbO2I4] octahedra, and hence induces the enhancement of SHG. This work provides a 1D vdW ferroelectric system for developing novel ferroelectronic and photonic devices.
Collapse
Affiliation(s)
- Yuqiang Fang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China
- Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Niuzhuang Yang
- School of Instrument and Electronics, North University of China, Taiyuan, 030051, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Xinyi Zhou
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shian Xia
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Dong Wang
- Center for High-pressure Science &Technology Advanced Research, Beijing, 100094, China
| | - Jierui Fu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Jiapeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Yang Ding
- Center for High-pressure Science &Technology Advanced Research, Beijing, 100094, China
| | - Ting Yu
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Key Laboratory of Artificial Micro- and Nano- structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
| | - Chengyan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, 518045, China
| | - Gaoyang Gou
- Frontier Institute of Science and Technology, and State Key Laboratory of Electrical Insulation and Power Equipment, Xian Jiaotong University, Xian, 710049, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Fuqiang Huang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China
- Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| |
Collapse
|
8
|
Sutter E, Kisslinger K, Wu L, Zhu Y, Yang S, Camino F, Nam CY, Sutter P. Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2406129. [PMID: 39329465 DOI: 10.1002/smll.202406129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2024] [Revised: 09/08/2024] [Indexed: 09/28/2024]
Abstract
Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high-quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large - and especially large and thin - single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor-liquid-solid growth combined with direct lateral vapor-solid incorporation produces high-quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate-supported flakes where material is added via layer-by-layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm2 V-1 s-1, on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.
Collapse
Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Lijun Wu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Seunghoon Yang
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Fernando Camino
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Chang-Yong Nam
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| |
Collapse
|
9
|
Ge R, Liu B, Sui F, Zheng Y, Yu Y, Wang K, Qi R, Huang R, Yue F, Chu J, Duan CG. In Situ Formation of SnSe 2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404965. [PMID: 39155421 DOI: 10.1002/smll.202404965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2024] [Revised: 08/01/2024] [Indexed: 08/20/2024]
Abstract
2D van der Waals (vdW) layered semiconductor vertical heterostructures with controllable band alignment are highly desired for nanodevice applications including photodetection and photovoltaics. However, current 2D vdW heterostructures are mainly obtained via mechanical exfoliation and stacking process, intrinsically limiting the yield and reproducibility, hardly achieving large-area with specific orientation. Here, large-area vdW-epitaxial SnSe2/SnSe heterostructures are obtained by annealing layered SnSe. These in situ Raman analyses reveal the optimized annealing conditions for the phase transition of SnSe to SnSe2. The spherical aberration-corrected transmission electron microscopy investigations demonstrate that layered SnSe2 epitaxially forms on SnSe surface with atomically sharp interface and specific orientation. Optical characterizations and theoretical calculations reveal valley polarization of the heterostructures that originate from SnSe, suggesting a naturally adjustable band alignment between type-II and type-III, only relying on the polarization angle of incident lights. This work not only offers a unique and accessible approach to obtaining large-area SnSe2/SnSe heterostructures with new insight into the formation mechanism of vdW heterostructures, but also opens the intriguing optical applications based on valleytronic nanoheterostructures.
Collapse
Affiliation(s)
- Rui Ge
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Beituo Liu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yufan Zheng
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yilun Yu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Kaiqi Wang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing, 401120, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
| |
Collapse
|
10
|
Zhang C, Zhang S, Cui P, Zhang Z. Tunable Multistate Ferroelectricity of Unit-Cell-Thick BaTiO 3 Revived by a Ferroelectric SnS Monolayer via Interfacial Sliding. NANO LETTERS 2024; 24:8664-8670. [PMID: 38967611 DOI: 10.1021/acs.nanolett.4c02041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO3, even when the latter is thinned to one unit cell in thickness. The underlying mechanism for overcoming the conventional detrimental critical thickness effect is attributed to facile interfacial inversion symmetry breaking by robust in-plane polarization of SnS or GeSe. Furthermore, when invoking interlayer sliding, we can stabilize multiple polarization states and achieve efficient interstate switching in the heterostructures, accompanied by dynamical ferroelectric skyrmionic excitations. When invoking sliding and twisting, the moiré domains exhibit nontrivial polar vortexes, which can be laterally displaced via different sliding schemes. These findings provide an intuitive avenue for simultaneously overcoming the standing critical thickness issue in bulk ferroelectrics and weak polarization issue in sliding ferroelectricity.
Collapse
Affiliation(s)
- Chuanbao Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| |
Collapse
|
11
|
Dwij V, De B, Kunwar HS, Rana S, Velpula P, Shukla DK, Gupta MK, Mittal R, Pal S, Briscoe J, Sathe VG. Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33752-33762. [PMID: 38902888 DOI: 10.1021/acsami.4c02901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.
Collapse
Affiliation(s)
- Vivek Dwij
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Binoy De
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | - Sumesh Rana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Praveen Velpula
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Dinesh K Shukla
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Mayanak Kumar Gupta
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Ranjan Mittal
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Subhajit Pal
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Joe Briscoe
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Vasant G Sathe
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| |
Collapse
|
12
|
Hou C, Shen Y, Wang Q, Yoshikawa A, Kawazoe Y, Jena P. In-Plane Sliding Ferroelectricity Realized in Penta-PdSe 2/Penta-PtSe 2 van der Waals Heterostructure. ACS NANO 2024; 18:16923-16933. [PMID: 38905522 DOI: 10.1021/acsnano.4c02994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/23/2024]
Abstract
Different from conventional 2D sliding ferroelectrics with polarization switchable in the out-of-plane via interlayer sliding, we show the existence of in-plane sliding ferroelectricity in a bilayer of a pentagon-based van der Waals heterostructure formed by vertically stacking an experimentally synthesized penta-PdSe2 sheet and a crystal lattice well-matched penta-PtSe2 sheet. From the 128 sliding patterns, four stable configurations are found that exhibit in-plane sliding ferroelectricity with an ultralow polarization switching barrier of 1.91 meV/atom and a high ferroelectric polarization of ±17.11 × 10-10 C m-1. Following the ferroelectric transition among the stable sliding configurations, significant changes in carrier mobility, electrical conductivity, and second harmonic generation are identified. In particular, the ferroelectric stacking configurations are found to possess a negative Poisson's ratio, facilitating the experimental characterization of the sliding ferroelectric effect. This study demonstrates that pentagonal sheets can be used to realize 2D in-plane sliding ferroelectrics going beyond the existing ones.
Collapse
Affiliation(s)
- Changsheng Hou
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Yiheng Shen
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Akira Yoshikawa
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8577, Japan
- Department of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Puru Jena
- Department of Physics, Institute for Sustainable Energy and Environment, Virginia Commonwealth University, Richmond, Virginia 23284, United States
| |
Collapse
|
13
|
Guan Z, Zheng YZ, Tong WY, Zhong N, Cheng Y, Xiang PH, Huang R, Chen BB, Wei ZM, Chu JH, Duan CG. 2D Janus Polarization Functioned by Mechanical Force. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403929. [PMID: 38744294 DOI: 10.1002/adma.202403929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 04/26/2024] [Indexed: 05/16/2024]
Abstract
2D polarization materials have emerged as promising candidates for meeting the demands of device miniaturization, attributed to their unique electronic configurations and transport characteristics. Although the existing inherent and sliding mechanisms are increasingly investigated in recent years, strategies for inducing 2D polarization with innovative mechanisms remain rare. This study introduces a novel 2D Janus state by modulating the puckered structure. Combining scanning probe microscopy, transmission electron microscopy, and density functional theory calculations, this work realizes force-triggered out-of-plane and in-plane dipoles with distorted smaller warping in GeSe. The Janus state is preserved after removing the external mechanical perturbation, which could be switched by modulating the sliding direction. This work offers a versatile method to break the space inversion symmetry in a 2D system to trigger polarization in the atomic scale, which may open an innovative insight into configuring novel 2D polarization materials.
Collapse
Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Yun-Zhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wen-Yi Tong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Zhong-Ming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jun-Hao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| |
Collapse
|
14
|
Kim S, Lee W, Ko K, Cho H, Cho H, Jeon S, Jeong C, Kim S, Ding F, Suh J. Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400800. [PMID: 38593471 DOI: 10.1002/adma.202400800] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Revised: 04/01/2024] [Indexed: 04/11/2024]
Abstract
Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase, and low-temperature deposition. A set of synthetic strategies is hereby presented to selectively produce wafer-scale tin selenides, SnSex (both x = 1 and 2), in the 2D forms. The 2D-SnSe2 films with tuneable thicknesses are directly grown via metal-organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal-organic precursors and decoupled dual-temperature regimes for high-temperature ligand cracking and low-temperature growth. In contrast, SnSe, which intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as-grown 2D-SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n-type to p-type crossover at the wafer scale. These tailor-made synthetic routes will accelerate the low-thermal-budget production of multiphase 2D materials in a reliable and scalable fashion.
Collapse
Affiliation(s)
- Sungyeon Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Wookhee Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Kyungmin Ko
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hanbin Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hoyeon Cho
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Seonhwa Jeon
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Changwook Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, China
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| |
Collapse
|
15
|
Yuan Y, Kotiuga M, Park TJ, Patel RK, Ni Y, Saha A, Zhou H, Sadowski JT, Al-Mahboob A, Yu H, Du K, Zhu M, Deng S, Bisht RS, Lyu X, Wu CTM, Ye PD, Sengupta A, Cheong SW, Xu X, Rabe KM, Ramanathan S. Hydrogen-induced tunable remanent polarization in a perovskite nickelate. Nat Commun 2024; 15:4717. [PMID: 38830914 PMCID: PMC11148064 DOI: 10.1038/s41467-024-49213-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/28/2024] [Indexed: 06/05/2024] Open
Abstract
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing ferroelectric materials and electrets using light-ion doping.
Collapse
Affiliation(s)
- Yifan Yuan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA.
| | - Michele Kotiuga
- Theory and Simulation of Materials (THEOS), National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
| | - Tae Joon Park
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
| | - Ranjan Kumar Patel
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Yuanyuan Ni
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA
| | - Arnob Saha
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, State College, PA, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA
| | - Jerzy T Sadowski
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | - Abdullah Al-Mahboob
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
| | - Kai Du
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Minning Zhu
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Sunbin Deng
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
| | - Ravindra S Bisht
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Xiao Lyu
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Chung-Tse Michael Wu
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Peide D Ye
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Abhronil Sengupta
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, State College, PA, USA
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Xiaoshan Xu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA
| | - Karin M Rabe
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Shriram Ramanathan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA.
| |
Collapse
|
16
|
Van Winkle M, Dowlatshahi N, Khaloo N, Iyer M, Craig IM, Dhall R, Taniguchi T, Watanabe K, Bediako DK. Engineering interfacial polarization switching in van der Waals multilayers. NATURE NANOTECHNOLOGY 2024; 19:751-757. [PMID: 38504024 DOI: 10.1038/s41565-024-01642-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 02/29/2024] [Indexed: 03/21/2024]
Abstract
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains. The engendered tunability is unparalleled in conventional bulk ferroelectrics or polar bilayers. By means of operando transmission electron microscopy we show how alterations of the relative rotations of three WSe2 layers produce structural polytypes with distinct arrangements of polar domains with either a global or localized switching response. Furthermore, the presence of uniaxial strain generates structural anisotropy that yields a range of switching behaviours, coercivities and even tunable biased responses. We also provide evidence of mechanical coupling between the two interfaces of the trilayer, a key consideration for the control of switching dynamics in polar multilayer structures more broadly.
Collapse
Affiliation(s)
- Madeline Van Winkle
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikita Dowlatshahi
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikta Khaloo
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Mrinalni Iyer
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- Department of Chemistry, University of Minnesota, Minneapolis, MN, USA
| | - Isaac M Craig
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Rohan Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| |
Collapse
|
17
|
Reddy PD, Nordin LJ, Hughes LB, Preidl AK, Mukherjee K. Expanded Stability of Layered SnSe-PbSe Alloys and Evidence of Displacive Phase Transformation from Rocksalt in Heteroepitaxial Thin Films. ACS NANO 2024; 18:13437-13449. [PMID: 38717390 DOI: 10.1021/acsnano.4c04128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Bulk PbSnSe has a two-phase region, or miscibility gap, as the crystal changes from a van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions. This structural transition drives a large contrast in the electrical, optical, and thermal properties. We realize low temperature direct growth of epitaxial PbSnSe thin films on GaAs via molecular beam epitaxy using an in situ PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the Pnma layered structure out to Pb0.45Sn0.55Se, beyond the bulk limit around Pb0.25Sn0.75Se at low temperatures. Pushing further, we directly access metastable two-phase films of layered and rocksalt grains that are nearly identical in composition around Pb0.50Sn0.50Se and entirely circumvent the miscibility gap. We present microstructural and compositional evidence for an incomplete displacive transformation from a rocksalt to layered structure in these films, which we speculate occurs during the sample cooling to room temperature after synthesis. In situ temperature-cycling experiments on a Pb0.58Sn0.42Se rocksalt film reproduce characteristic attributes of a displacive transition and show a modulation in electronic properties. We find well-defined orientation relationships between the phases formed and reveal unconventional strain relief mechanisms involved in the crystal structure transformation using transmission electron microscopy. Overall, our work adds a scalable thin film integration route to harness the dramatic contrast in material properties in PbSnSe across a potentially ultrafast crystalline-crystalline structural transition.
Collapse
Affiliation(s)
- Pooja D Reddy
- Department of Materials Science and Engineering, Stanford University, Stanford, California94306, United States
| | - Leland J Nordin
- Department of Materials Science and Engineering, Stanford University, Stanford, California94306, United States
| | - Lillian B Hughes
- Materials Department, University of California, Santa Barbara, California93106, United States
| | - Anna-Katharina Preidl
- Department of Materials Science and Engineering, Stanford University, Stanford, California94306, United States
| | - Kunal Mukherjee
- Department of Materials Science and Engineering, Stanford University, Stanford, California94306, United States
| |
Collapse
|
18
|
Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
Collapse
Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| |
Collapse
|
19
|
Zhou BT, Pathak V, Franz M. Quantum-Geometric Origin of Out-of-Plane Stacking Ferroelectricity. PHYSICAL REVIEW LETTERS 2024; 132:196801. [PMID: 38804928 DOI: 10.1103/physrevlett.132.196801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 11/16/2023] [Accepted: 04/10/2024] [Indexed: 05/29/2024]
Abstract
Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane stacking ferroelectric polarization can be generally understood as a consequence of a nontrivial Berry phase borne out of an effective Su-Schrieffer-Heeger model description with broken sublattice symmetry, thus elucidating the quantum-geometric origin of polarization in the extremely nonperiodic bilayer limit. Our theory applies to known stacking ferroelectrics such as bilayer transition-metal dichalcogenides in 3R and T_{d} phases, as well as general AB-stacked honeycomb bilayers with staggered sublattice potential. Our explanatory and self-consistent framework based on the quantum-geometric perspective establishes quantitative understanding of out-of-plane SFE materials beyond symmetry principles.
Collapse
Affiliation(s)
- Benjamin T Zhou
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Vedangi Pathak
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Marcel Franz
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| |
Collapse
|
20
|
Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
Collapse
Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| |
Collapse
|
21
|
Kim H, Kim C, Jung Y, Kim N, Son J, Lee GH. In-plane anisotropic two-dimensional materials for twistronics. NANOTECHNOLOGY 2024; 35:262501. [PMID: 38387091 DOI: 10.1088/1361-6528/ad2c53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/22/2024] [Indexed: 02/24/2024]
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
Collapse
Affiliation(s)
- Hangyel Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changheon Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, United States of America
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America
| | - Namwon Kim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, United States of America
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, United States of America
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology(UST), Jeonbuk 55324, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
| |
Collapse
|
22
|
Fu Y, Liu Z, Yue S, Zhang K, Wang R, Zhang Z. Optical Second Harmonic Generation of Low-Dimensional Semiconductor Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:662. [PMID: 38668156 PMCID: PMC11054873 DOI: 10.3390/nano14080662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/02/2024] [Accepted: 04/07/2024] [Indexed: 04/29/2024]
Abstract
In recent years, the phenomenon of optical second harmonic generation (SHG) has attracted significant attention as a pivotal nonlinear optical effect in research. Notably, in low-dimensional materials (LDMs), SHG detection has become an instrumental tool for elucidating nonlinear optical properties due to their pronounced second-order susceptibility and distinct electronic structure. This review offers an exhaustive overview of the generation process and experimental configurations for SHG in such materials. It underscores the latest advancements in harnessing SHG as a sensitive probe for investigating the nonlinear optical attributes of these materials, with a particular focus on its pivotal role in unveiling electronic structures, bandgap characteristics, and crystal symmetry. By analyzing SHG signals, researchers can glean invaluable insights into the microscopic properties of these materials. Furthermore, this paper delves into the applications of optical SHG in imaging and time-resolved experiments. Finally, future directions and challenges toward the improvement in the NLO in LDMs are discussed to provide an outlook in this rapidly developing field, offering crucial perspectives for the design and optimization of pertinent devices.
Collapse
Affiliation(s)
- Yue Fu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Zhengyan Liu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Song Yue
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Kunpeng Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Ran Wang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Zichen Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| |
Collapse
|
23
|
Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
Collapse
Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| |
Collapse
|
24
|
Barreto RR, Ribeiro TC, Soares GHR, Pereira E, Miquita DR, Safar GAM, Mazzoni MSC, Malachias A, Magalhaes-Paniago R. Evidence of thickness-dependent surface-induced ferroelectricity in few-layer germanium sulfide obtained via scanning tunneling spectroscopy. NANOSCALE 2024. [PMID: 38426356 DOI: 10.1039/d3nr05566c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The discovery of ferroelectricity in two-dimensional van der Waals materials has sparked enormous interest from the scientific community, due to its possible applications in next-generation nanoelectronic devices, such as random-access memory devices, digital signal processors, and solar cells, among others. In the present study, we used vapor phase deposition to synthesize ultrathin germanium sulfide nano-flakes on a highly oriented pyrolytic graphite substrate. Nanostructures of variable thicknesses were characterized using scanning tunneling microscopy and spectroscopy. Tunneling currents under forward and backward biases were measured as a function of nano-flake thickness. Remarkably, we clearly observed a hysteresis pattern, which we attributed to surface ferroelectric behavior, consistent with the screening conditions of polarization charges. The effect increases as the number of layers is reduced. This experimental result may be directly applicable to miniaturized memory devices, given the two-dimensional nature of this effect.
Collapse
Affiliation(s)
- Rafael R Barreto
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Thiago C Ribeiro
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Gustavo H R Soares
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Everton Pereira
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Douglas R Miquita
- Microscopic Center, Federal University of Minas Gerais, Belo Horizonte, MG, 31270-901, Brazil
| | - Gustavo A M Safar
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Mario S C Mazzoni
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Angelo Malachias
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| | - Rogerio Magalhaes-Paniago
- Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901, Belo Horizonte, MG, Brazil.
| |
Collapse
|
25
|
Aleksa P, Ghorbani-Asl M, Iqbal S, Martuza MA, Bremerich A, Wilks D, Cai J, Chagas T, Ohmann R, Krasheninnikov A, Busse C. Transition from fractal-dendritic to compact islands for the 2D-ferroelectric SnSe on graphene/Ir(111). NANOTECHNOLOGY 2024; 35:175707. [PMID: 38253004 DOI: 10.1088/1361-6528/ad2156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 01/22/2024] [Indexed: 01/24/2024]
Abstract
Epitaxial growth is a versatile method to prepare two-dimensional van der Waals ferroelectrics like group IV monochalcogenides which have potential for novel electronic devices and sensors. We systematically study SnSe monolayer islands grown by molecular beam epitaxy, especially the effect of annealing temperature on shape and morphology of the edges. Characterization of the samples by scanning tunneling microscopy reveals that the shape of the islands changes from fractal-dendritic after deposition at room temperature to a compact rhombic shape through annealing, but ripening processes are absent up to the desorption temperature. A two-step growth process leads to large, epitaxially aligned rhombic islands bounded by well-defined110-edges (armchair-like), which we claim to be the equilibrium shape of the stoichiometric SnSe monolayer islands. The relaxation of the energetically favorable edges is detected in atomically resolved STM images. The experimental findings are supported by the results of our first-principles calculations, which provide insights into the energetics of the edges, their reconstructions, and yields the equilibrium shapes of the islands which are in good agreement with the experiment.
Collapse
Affiliation(s)
- P Aleksa
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - M Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf D-01328 Dresden, Germany
| | - S Iqbal
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - M A Martuza
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - A Bremerich
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - D Wilks
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - J Cai
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - T Chagas
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - R Ohmann
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| | - A Krasheninnikov
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf D-01328 Dresden, Germany
- Department of Applied Physics, Aalto University, PO Box 11100, FI-00076 Aalto, Finland
| | - C Busse
- Department Physik, Universität Siegen, D-57072 Siegen, Germany
| |
Collapse
|
26
|
Wang L, Zhou X, Su M, Zhang Y, Li R, Zhang R, Wu X, Wu Z, Wong WPD, Xu QH, He Q, Loh KP. In-Plane Ferrielectric Order in van der Waals β'-In 2Se 3. ACS NANO 2024; 18:809-818. [PMID: 38108268 DOI: 10.1021/acsnano.3c09250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
van der Waals ferroic materials exhibit rich potential for implementing future generation functional devices. Among these, layered β'-In2Se3 has fascinated researchers with its complex superlattice and domain structures. As opposed to ferroelectric α-In2Se3, the understanding of β'-In2Se3 ferroic properties remains unclear because ferroelectric, antiferroelectric, and ferroelastic characteristics have been separately reported in this material. To develop useful applications, it is necessary to understand the microscopic structural properties and their correlation with macroscopic device characteristics. Herein, using scanning transmission electron microscopy (STEM), we observed that the arrangement of dipoles deviates from the ideal double antiparallel antiferroelectric character due to competition between antiferroelectric and ferroelectric structural ordering. By virtue of second-harmonic generation, four-dimensional STEM, and in-plane piezoresponse force microscopy, the long-range inversion-breaking symmetry, uncompensated local polarization, and net polarization domains are unambiguously verified, revealing β'-In2Se3 as an in-plane ferrielectric layered material. Additionally, our device study reveals analogous resistive switching behaviors of different types owing to polarization switching, defect migration, and defect-induced charge trapping/detrapping processes.
Collapse
Affiliation(s)
- Lin Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Mengyao Su
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Yishu Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Runlai Li
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Rongrong Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Xiao Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Zhenyue Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Walter P D Wong
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| |
Collapse
|
27
|
Wang H, Kumar A, Dai S, Lin X, Jacob Z, Oh SH, Menon V, Narimanov E, Kim YD, Wang JP, Avouris P, Martin Moreno L, Caldwell J, Low T. Planar hyperbolic polaritons in 2D van der Waals materials. Nat Commun 2024; 15:69. [PMID: 38167681 PMCID: PMC10761702 DOI: 10.1038/s41467-023-43992-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 11/27/2023] [Indexed: 01/05/2024] Open
Abstract
Anisotropic planar polaritons - hybrid electromagnetic modes mediated by phonons, plasmons, or excitons - in biaxial two-dimensional (2D) van der Waals crystals have attracted significant attention due to their fundamental physics and potential nanophotonic applications. In this Perspective, we review the properties of planar hyperbolic polaritons and the variety of methods that can be used to experimentally tune them. We argue that such natural, planar hyperbolic media should be fairly common in biaxial and uniaxial 2D and 1D van der Waals crystals, and identify the untapped opportunities they could enable for functional (i.e. ferromagnetic, ferroelectric, and piezoelectric) polaritons. Lastly, we provide our perspectives on the technological applications of such planar hyperbolic polaritons.
Collapse
Affiliation(s)
- Hongwei Wang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
- Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, 315211, Ningbo, China
| | - Anshuman Kumar
- Laboratory of Optics of Quantum Materials, Department of Physics, IIT Bombay, Mumbai, Maharashtra, 400076, India
| | - Siyuan Dai
- Department of Mechanical Engineering, Materials Research and Education Center, Auburn University, Auburn, AL, 36849, USA
| | - Xiao Lin
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Science and Technology Innovation Center, College of Information Science and Electronic Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Zubin Jacob
- Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Sang-Hyun Oh
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Vinod Menon
- Department of Physics, City College and Graduate Center, City University of New York, New York, NY, 10031, USA
| | - Evgenii Narimanov
- Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, Republic of Korea
| | - Jian-Ping Wang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Phaedon Avouris
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
- IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
| | - Luis Martin Moreno
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
- Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Joshua Caldwell
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37235, USA
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| |
Collapse
|
28
|
Yu Y, Xiong T, Liu YY, Yang J, Xia JB, Wei Z. Polarization Reversal of Group IV-VI Semiconductors with Pucker-Like Structure: Mechanism Dissecting and Function Demonstration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307769. [PMID: 37696251 DOI: 10.1002/adma.202307769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 08/31/2023] [Indexed: 09/13/2023]
Abstract
Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, the characteristics of anisotropic absorption reversal are systematically elucidated in pucker-like group IV-VI semiconductors MX (M = Ge, Sn; X = S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The photodetector is constructed by utilizing MX as a light-absorbing layer, harnessing polarization-sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual-band image band identification and image enhancement without additional auxiliary components.
Collapse
Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jian-Bai Xia
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
29
|
Hu Y, Rogée L, Wang W, Zhuang L, Shi F, Dong H, Cai S, Tay BK, Lau SP. Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides. Nat Commun 2023; 14:8470. [PMID: 38123543 PMCID: PMC10733392 DOI: 10.1038/s41467-023-44298-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 12/07/2023] [Indexed: 12/23/2023] Open
Abstract
Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.
Collapse
Affiliation(s)
- Yi Hu
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
| | - Lukas Rogée
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Weizhen Wang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Lyuchao Zhuang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Fangyi Shi
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Hui Dong
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Songhua Cai
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Shu Ping Lau
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China.
| |
Collapse
|
30
|
Moody MJ, Paul JT, Smeets PJM, Dos Reis R, Kim JS, Mead CE, Gish JT, Hersam MC, Chan MKY, Lauhon LJ. van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56150-56157. [PMID: 38011316 DOI: 10.1021/acsami.3c11931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.
Collapse
Affiliation(s)
- Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joshua T Paul
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Paul J M Smeets
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Christopher E Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jonathan Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Maria K Y Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
31
|
Lu Y, Su L, Fang L, Luo Q, Gong M, Cao D, Chen X, Shi X, Shu H. Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In 2Se 3 ferroelectrics. NANOSCALE 2023; 15:18306-18316. [PMID: 37920997 DOI: 10.1039/d3nr03166g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Two-dimensional (2D) ferroelectric semiconductors, such as α-In2Se3 with switchable spontaneous polarization and superior optoelectronic properties, exhibit large potential for functional device applications. The electric transport properties and device performance of 2D α-In2Se3 are strongly sensitive to the ferroelectric domain structures and polarization textures, but they are rarely explored at the atomic scale. Herein, by a combination of first-principles calculations and a developed domain switching theory, we report the domain nucleation kinetics and polarization-texture dependent electronic properties in α-In2Se3 ferroelectrics. Our calculated results reveal that the reversed domains characterized by armchair boundaries tend to form triangular or stripped shape. The energy barrier for propagating domain boundaries is ∼1.42 eV and can be reduced by loading external electric field, which is responsible for driving the evolution of domain structures. Moreover, the domain switching leads to notable changes in the band gap and carrier spatial distribution of α-In2Se3 monolayer, resulting in higher electric resistance of multi-polarization domain structures than that of single-polarization state. The domain structures of multilayer α-In2Se3 follow a layer-by-layer switching mechanism, which causes the transition of electronic structures from self-doped p-n junctions to type-II semiconductor homojunctions. This study not only provides an in-depth insight into the domain switching mechanisms of α-In2Se3 but also opens up the possibility to tailor their electronic and transport properties.
Collapse
Affiliation(s)
- Yanan Lu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Liqin Su
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Linghui Fang
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Qingyuan Luo
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Meiying Gong
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| | - Dan Cao
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
| | - Xiaowen Shi
- Hongzhiwei Technology (Shanghai) Co., Ltd, Shanghai 201206, People's Republic of China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
| |
Collapse
|
32
|
Sutter P, Sutter E. Tunable 1D van der Waals Nanostructures by Vapor-Liquid-Solid Growth. Acc Chem Res 2023; 56:3235-3245. [PMID: 37938893 DOI: 10.1021/acs.accounts.3c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
ConspectusVapor-liquid-solid (VLS) growth using molten metal catalysts has traditionally been used to synthesize nanowires from different 3D-crystalline semiconductors. With their anisotropic structure and properties, 2D/layered semiconductors create additional opportunities for materials design when shaped into 1D nanostructures. In contrast to hexagonal 2D crystals such as graphene, h-BN, and transition metal dichalcogenides, which tend to roll up into nanotubes, VLS growth of layered group III and group IV monochalcogenides produces diverse nanowire and nanoribbon morphologies that crystallize in a bulk-like layered structure with nanometer-scale footprint and lengths exceeding tens of micrometers. In this Account, we discuss the achievable morphologies, the mechanisms governing key structural features, and the emerging functional properties of these 1D van der Waals (vdW) architectures. Recent results highlight rich sets of phenomena that qualify these materials as a distinct class of nanostructures, far beyond a mere extension of 3D-crystalline VLS nanowires to vdW crystals.The main difference between 3D- and vdW crystals, the pronounced in-plane/cross-plane anisotropy of layered materials, motivates investigating the factors governing the layer orientation. Recent research suggests that the VLS catalyst plays a key role, and that its modification via the choice of chalcogens or through modifiers added to the growth precursor can switch both the nanostructure morphology and vdW layering. In many instances, ordinary layered structures are not formed but VLS growth is dominated by morphologies─often containing a crystal defect─that present reduced or vanishing layer nucleation barriers, thus achieving fast growth and emerging as the principal synthesis product. Prominent defect morphologies include vdW bicrystals growing by a twin-plane reentrant process and chiral nanowires formed by spiral growth around an axial screw dislocation. The latter carry particular promise, e.g., for twistronics. In vdW nanowires, Eshelby twist─a progressive crystal rotation caused by the dislocation stress field─translates into interlayer twist that is precisely tunable via the wire diameter. Projected onto a helicoid vdW interface, the resulting twist moirés not only modify the electronic structure but also realize configurations without equivalent in planar systems, such as continuously variable twist and twist homojunctions.1D vdW nanostructures derive distinct functionality from both their layered structure and embedded defects. Correlated electron microscopy methods including imaging, nanobeam diffraction, as well as electron-stimulated local absorption and luminescence spectroscopies combine to an exceptionally powerful probe of this emerging functionality, identifying twist-moiré induced electronic modulations and chiral photonic modes, demonstrating the benign nature of defects in optoelectronics, and uncovering ferroelectricity via symmetry-breaking by single-layer stacking faults in vdW nanowires. Far-reaching possibilities for tuning crystal structure, morphology, and defects create a rich playground for the discovery of new functional nanomaterials based on vdW crystals. Given the prominence of defects and extensive prospects for controlling their character and placement during synthesis, 1D vdW nanostructures have the potential to cause a paradigm shift in the science of electronic materials, replacing the traditional strategy of suppressing crystal imperfections with an alternative philosophy that embraces the use of individual defects with designed properties as drivers of technology.
Collapse
Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| |
Collapse
|
33
|
Bai D, Nie Y, Shang J, Liu J, Liu M, Yang Y, Zhan H, Kou L, Gu Y. Ferroelectric Domain and Switching Dynamics in Curved In 2Se 3: First-Principles and Deep Learning Molecular Dynamics Simulations. NANO LETTERS 2023. [PMID: 37965921 DOI: 10.1021/acs.nanolett.3c03160] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
Despite its prevalence in experiments, the influence of complex strain on material properties remains understudied due to the lack of effective simulation methods. Here, the effects of bending, rippling, and bubbling on the ferroelectric domains are investigated in an In2Se3 monolayer by density functional theory and deep learning molecular dynamics simulations. Since the ferroelectric switching barrier can be increased (decreased) by tensile (compressive) strain, automatic polarization reversal occurs in α-In2Se3 with a strain gradient when it is subjected to bending, rippling, or bubbling deformations to create localized ferroelectric domains with varying sizes. The switching dynamics depends on the magnitude of curvature and temperature, following an Arrhenius-style relationship. This study not only provides a promising solution for cross-scale studies using deep learning but also reveals the potential to manipulate local polarization in ferroelectric materials through strain engineering.
Collapse
Affiliation(s)
- Dongyu Bai
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Yihan Nie
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
- College of Civil Engineering and Architecture, Zhejiang University, Hangzhou 310058, People's Republic of China
| | - Jing Shang
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Junxian Liu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Minghao Liu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Yang Yang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Haifei Zhan
- College of Civil Engineering and Architecture, Zhejiang University, Hangzhou 310058, People's Republic of China
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| |
Collapse
|
34
|
Shi C, Mao N, Zhang K, Zhang T, Chiu MH, Ashen K, Wang B, Tang X, Guo G, Lei S, Chen L, Cao Y, Qian X, Kong J, Han Y. Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics. Nat Commun 2023; 14:7168. [PMID: 37935672 PMCID: PMC10630342 DOI: 10.1038/s41467-023-42947-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 10/27/2023] [Indexed: 11/09/2023] Open
Abstract
Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.
Collapse
Affiliation(s)
- Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kena Zhang
- Departments of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ming-Hui Chiu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenna Ashen
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Bo Wang
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Xiuyu Tang
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Galio Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Shiming Lei
- Department of Physics, Rice University, Houston, TX, 77005, USA
| | - Longqing Chen
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Ye Cao
- Departments of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Xiaofeng Qian
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
| |
Collapse
|
35
|
Hlushchenko D, Siudzinska A, Cybinska J, Guzik M, Bachmatiuk A, Kudrawiec R. Stability of mechanically exfoliated layered monochalcogenides under ambient conditions. Sci Rep 2023; 13:19114. [PMID: 37925524 PMCID: PMC10625602 DOI: 10.1038/s41598-023-46092-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/27/2023] [Indexed: 11/06/2023] Open
Abstract
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.
Collapse
Affiliation(s)
- Daria Hlushchenko
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| | - Anna Siudzinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Joanna Cybinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Malgorzata Guzik
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Alicja Bachmatiuk
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Robert Kudrawiec
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| |
Collapse
|
36
|
Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
Collapse
Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
| |
Collapse
|
37
|
Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
Collapse
Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
| |
Collapse
|
38
|
Zhou S, Liao L, Chen L, Feng B, He X, Bai X, Song C, Wu K. Ferroelectricity in Epitaxial Perovskite Oxide Bi 2WO 6 Films with One-Unit-Cell Thickness. NANO LETTERS 2023; 23:7838-7844. [PMID: 37590032 DOI: 10.1021/acs.nanolett.3c01426] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Retaining ferroelectricity in ultrathin films or nanostructures is crucial for miniaturizing ferroelectric devices, but it is a challenging task due to intrinsic depolarization and size effects. In this study, we have shown that it is possible to stably maintain in-plane polarization in an extremely thin, one-unit-cell thick epitaxial Bi2WO6 film. The use of a perfectly lattice-matched NdGaO3 (110) substrate for the Bi2WO6 film minimizes strain and enhances stability. We attribute the residual polarization in this ultrathin film to the crystal stability of the Bi-O octahedral framework against structural distortions. Our findings suggest that ferroelectricity can surpass the critical thickness limit through proper strain engineering, and the Bi2WO6/NdGaO3 (110) system presents a potential platform for designing low-energy consumption, nonvolatile ferroelectric memories.
Collapse
Affiliation(s)
- Song Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Liao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chuangye Song
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| |
Collapse
|
39
|
Gao Y, Li S, Zeng XC, Wu M. Exploitation of mixed-valency chemistry for designing a monolayer with double ferroelectricity and triferroic couplings. NANOSCALE 2023; 15:13567-13573. [PMID: 37565465 DOI: 10.1039/d3nr02216a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Mixed-valence compounds possess both intriguing chemical and physical properties such as the intervalence charge transfer band and thus have been excellent model systems for the investigation of fundamental electron- and charge-transfer phenomena. Herein, we show that valence stratification can be a source of symmetry breaking and generating ferroelectricity in two-dimensional (2D) materials. We present ab initio computation evidence of the monolayer Cu2Cl3 structure with Cu ions being stratified into two separated layers of Cu(I) and Cu(II). Chemically, this unique monolayer not only entails lower formation energy than the bulk CuCl + CuCl2, but also enables the swapping of two valences through vertical ferroelectric switching, leading to a hitherto unreported chemical valencing phenomenon. Notably, the Jahn-Teller distortion of the Cu(II) layer results in another source of symmetry breaking and thus in-plane ferroelectricity. Apart from the valence swapping and self-contained double ferroelectricity, the monolayer's ferroelasticity is also coupled with in-plane ferroelectricity, while the monolayer's ferromagnetism is coupled with vertical polarization owing to the distinct magnetization of each Cu(I) and Cu(II) layer, thereby evoking the long-sought 2D triferroicity as well as triferroic couplings.
Collapse
Affiliation(s)
- Yaxin Gao
- School of Physics and Mechanical Electrical & Engineering, Institute of Theoretical Physics, Hubei University of Education, Wuhan, Hubei 430205, China.
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Sha Li
- School of Physics and Mechanical Electrical & Engineering, Institute of Theoretical Physics, Hubei University of Education, Wuhan, Hubei 430205, China.
| | - Xiao Cheng Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China.
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| |
Collapse
|
40
|
Zhang X, Shi Y, Shi Z, Xia H, Ma M, Wang Y, Huang K, Wu Y, Gong Y, Fei H, He Y, Ye G. High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons. NANO LETTERS 2023; 23:7449-7455. [PMID: 37556377 DOI: 10.1021/acs.nanolett.3c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.
Collapse
Affiliation(s)
- Xinyu Zhang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yuyang Shi
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Zude Shi
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hang Xia
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Mingyu Ma
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China
| | - Yiliu Wang
- College of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Kang Huang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ye Wu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Huilong Fei
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yongmin He
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Gonglan Ye
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| |
Collapse
|
41
|
Ferroelectricity and multiferroicity down to the atomic thickness. NATURE NANOTECHNOLOGY 2023; 18:829-830. [PMID: 37580440 DOI: 10.1038/s41565-023-01494-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
|
42
|
Zhang T, Voshell A, Zhou D, Ward ZD, Yu Z, Liu M, Díaz Aponte KO, Granzier-Nakajima T, Lei Y, Liu H, Terrones H, Elías AL, Rana M, Terrones M. Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS 2/Ge heterostructures. NANOSCALE 2023; 15:12348-12357. [PMID: 37449871 DOI: 10.1039/d3nr00961k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures. As examples, 2D/3D heterostructures based on monolayer TMDs (e.g., WS2) and bulk germanium (Ge) have become emerging candidates for optoelectronic applications, such as ultrasensitive photodetectors that are capable of detecting broadband light from the mid-infrared (IR) to visible range. Currently, the study of WS2/Ge(100) heterostructures is in its infancy and it remains largely unexplored how sample preparation conditions and different substrates affect their photoluminescence (PL) and other optoelectronic properties. In this report, we investigated the PL quenching effect in monolayer WS2/Ge heterostructures prepared via a wet transfer process, and employed PL spectroscopy and atomic force microscopy (AFM) to demonstrate that post-transfer low-pressure annealing improves the interface quality and homogenizes the PL signal. We further studied and compared the temperature-dependent PL emissions of WS2/Ge with those of as-grown WS2 and WS2/graphene/Ge heterostructures. The results demonstrate that the integration of WS2 on Ge significantly quenches the PL intensity (from room temperature down to 80 K), and the PL quenching effect becomes even more prominent in WS2/graphene/Ge heterostructures, which is likely due to synergistic PL quenching effects induced by graphene and Ge. Density functional theory (DFT) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional calculations show that the interaction of WS2 and Ge is stronger than in adjacent layers of bulk WS2, thus changing the electronic band structure and making the direct band gap of monolayer WS2 less accessible. By understanding the impact of post-transfer annealing and substrate interactions on the optical properties of monolayer TMD/Ge heterostructures, this study contributes to the exploration of the processing-properties relationship and may guide the future design and fabrication of optoelectronic devices based on 2D/3D heterostructures of TMDs/Ge.
Collapse
Affiliation(s)
- Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Andrew Voshell
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Da Zhou
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Zachary D Ward
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Mingzu Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Kevin O Díaz Aponte
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Tomotaroh Granzier-Nakajima
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yu Lei
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - He Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
| | - Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Ana Laura Elías
- Department of Physics, Binghamton University, Binghamton, NY 13902, USA
| | - Mukti Rana
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
| |
Collapse
|
43
|
Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
Collapse
Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
| |
Collapse
|
44
|
Bozin ES, Xie H, Abeykoon AMM, Everett SM, Tucker MG, Kanatzidis MG, Billinge SJL. Local Sn Dipolar-Character Displacements behind the Low Thermal Conductivity in SnSe Thermoelectric. PHYSICAL REVIEW LETTERS 2023; 131:036101. [PMID: 37540855 DOI: 10.1103/physrevlett.131.036101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 05/10/2023] [Accepted: 06/20/2023] [Indexed: 08/06/2023]
Abstract
The local atomic structure of SnSe was characterized across its orthorhombic-to-orthorhombic structural phase transition using x-ray pair distribution function analysis. Substantial Sn displacements with a dipolar character persist in the high-symmetry high-temperature phase, albeit with a symmetry different from that of the ordered displacements below the transition. The analysis implies that the transition is neither order-disorder nor displacive but rather a complex crossover. Robust ferrocoupled SnSe intralayer distortions suggest a ferroelectriclike instability as the driving force. These local symmetry-lowering Sn displacements are likely integral to the ultralow lattice thermal conductivity mechanism in SnSe.
Collapse
Affiliation(s)
- E S Bozin
- Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - H Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - A M M Abeykoon
- Photon Sciences Division, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - S M Everett
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M G Tucker
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - S J L Billinge
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
| |
Collapse
|
45
|
Lin YC, Torsi R, Younas R, Hinkle CL, Rigosi AF, Hill HM, Zhang K, Huang S, Shuck CE, Chen C, Lin YH, Maldonado-Lopez D, Mendoza-Cortes JL, Ferrier J, Kar S, Nayir N, Rajabpour S, van Duin ACT, Liu X, Jariwala D, Jiang J, Shi J, Mortelmans W, Jaramillo R, Lopes JMJ, Engel-Herbert R, Trofe A, Ignatova T, Lee SH, Mao Z, Damian L, Wang Y, Steves MA, Knappenberger KL, Wang Z, Law S, Bepete G, Zhou D, Lin JX, Scheurer MS, Li J, Wang P, Yu G, Wu S, Akinwande D, Redwing JM, Terrones M, Robinson JA. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. ACS NANO 2023; 17:9694-9747. [PMID: 37219929 PMCID: PMC10324635 DOI: 10.1021/acsnano.2c12759] [Citation(s) in RCA: 23] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their heterostructures. First, we shed insight into modeling of defects and intercalants, focusing on their formation pathways and strategic functionalities. We also review machine learning for synthesis and sensing applications of 2D materials. In addition, we highlight important development in the synthesis, processing, and characterization of various 2D materials (e.g., MXnenes, magnetic compounds, epitaxial layers, low-symmetry crystals, etc.) and discuss oxidation and strain gradient engineering in 2D materials. Next, we discuss the optical and phonon properties of 2D materials controlled by material inhomogeneity and give examples of multidimensional imaging and biosensing equipped with machine learning analysis based on 2D platforms. We then provide updates on mix-dimensional heterostructures using 2D building blocks for next-generation logic/memory devices and the quantum anomalous Hall devices of high-quality magnetic topological insulators, followed by advances in small twist-angle homojunctions and their exciting quantum transport. Finally, we provide the perspectives and future work on several topics mentioned in this review.
Collapse
Affiliation(s)
- Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rehan Younas
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Christopher L Hinkle
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Heather M Hill
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kunyan Zhang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Christopher E Shuck
- A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States
| | - Chen Chen
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Hsiu Lin
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Daniel Maldonado-Lopez
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Jose L Mendoza-Cortes
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - John Ferrier
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Swastik Kar
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Nadire Nayir
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmet University, Karaman 70100, Turkey
| | - Siavash Rajabpour
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiwen Liu
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jie Jiang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Wouter Mortelmans
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Rafael Jaramillo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Joao Marcelo J Lopes
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Anthony Trofe
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Tetyana Ignatova
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Seng Huat Lee
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhiqiang Mao
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leticia Damian
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Yuanxi Wang
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Megan A Steves
- Institute for Quantitative Biosciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Kenneth L Knappenberger
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhengtianye Wang
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - George Bepete
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Mathias S Scheurer
- Institute for Theoretical Physics, University of Innsbruck, Innsbruck A-6020, Austria
| | - Jia Li
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Pengjie Wang
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Guo Yu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08540, United States
| | - Sanfeng Wu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, The University of Texas, Austin, Texas 78758, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Research Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, Nagano 380-8553, Japan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| |
Collapse
|
46
|
Zhao Y, Chi M, Liu J, Zhai J. Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics. DISCOVER NANO 2023; 18:83. [PMID: 37382739 DOI: 10.1186/s11671-023-03860-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/31/2023] [Indexed: 06/30/2023]
Abstract
Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe2, h-BN, and CuInP2S6 as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 103. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.
Collapse
Affiliation(s)
- Yilin Zhao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mengshuang Chi
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jitao Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China.
| |
Collapse
|
47
|
Li W, Zhang X, Yang J, Zhou S, Song C, Cheng P, Zhang YQ, Feng B, Wang Z, Lu Y, Wu K, Chen L. Emergence of ferroelectricity in a nonferroelectric monolayer. Nat Commun 2023; 14:2757. [PMID: 37179407 PMCID: PMC10183010 DOI: 10.1038/s41467-023-38445-1] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 04/28/2023] [Indexed: 05/15/2023] Open
Abstract
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, ferroelectricity is barely explored in materials with native centro or mirror symmetry, especially in the 2D limit. Here, we report the first experimental realization of room-temperature ferroelectricity in van der Waals layered GaSe down to monolayer with mirror symmetric structures, which exhibits strong intercorrelated out-of-plane and in-plane electric polarization. The origin of ferroelectricity in GaSe comes from intralayer sliding of the Se atomic sublayers, which breaks the local structural mirror symmetry and forms dipole moment alignment. Ferroelectric switching is demonstrated in nano devices fabricated with GaSe nanoflakes, which exhibit exotic nonvolatile memory behavior with a high channel current on/off ratio. Our work reveals that intralayer sliding is a new approach to generate ferroelectricity within mirror symmetric monolayer, and offers great opportunity for novel nonvolatile memory devices and optoelectronics applications.
Collapse
Affiliation(s)
- Wenhui Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuanlin Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jia Yang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, China
| | - Song Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Chuangye Song
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yi-Qi Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhenxing Wang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yunhao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou, 310027, China.
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| |
Collapse
|
48
|
Liu C, Zhang X, Wang X, Wang Z, Abdelwahab I, Verzhbitskiy I, Shao Y, Eda G, Sun W, Shen L, Loh KP. Ferroelectricity in Niobium Oxide Dihalides NbOX 2 (X = Cl, I): A Macroscopic- to Microscopic-Scale Study. ACS NANO 2023; 17:7170-7179. [PMID: 37036127 DOI: 10.1021/acsnano.2c09267] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
2D materials with ferroelectric and piezoelectric properties are of interest for energy harvesting, memory storage and electromechanical systems. Here, we present a systematic study of the ferroelectric properties in NbOX2 (X = Cl, I) across different spatial scales. The in-plane ferroelectricity in NbOX2 was investigated using transport and piezoresponse force microscopy (PFM) measurements, where it was observed that NbOCl2 has a stronger ferroelectric order than NbOI2. A high local field, exerted by both PFM and scanning tunneling microscopy (STM) tips, was found to induce 1D collinear ferroelectric strips in NbOCl2. STM imaging reveals the unreconstructed atomic structures of NbOX2 surfaces, and scanning tunneling spectroscopy was used to probe the electronic states induced at defect (vacancy) sites.
Collapse
Affiliation(s)
- Chaofei Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Xiuying Zhang
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Xinyun Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Ziying Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Ibrahim Abdelwahab
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Ivan Verzhbitskiy
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Yan Shao
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Goki Eda
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore 117546, Singapore
| | - Wanxin Sun
- Bruker Nano Surface Division, 30 Biopolis Street 09-01, The Matrix, Singapore 138671
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore 117546, Singapore
| |
Collapse
|
49
|
He Q, Tang Z, Dai M, Shan H, Yang H, Zhang Y, Luo X. Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2Se 3. NANO LETTERS 2023; 23:3098-3105. [PMID: 36779554 DOI: 10.1021/acs.nanolett.2c04289] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In2Se3 films by selenization of In2O3 in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In2Se3 with excellent crystalline quality. Electronic transport measurements of In2Se3 highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In2Se3 opens up potential applications of In2Se3 in novel nanoelectronics.
Collapse
Affiliation(s)
- Qinming He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhiyuan Tang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Minzhi Dai
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Huili Shan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin Luo
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| |
Collapse
|
50
|
Luo Y, Mao N, Ding D, Chiu MH, Ji X, Watanabe K, Taniguchi T, Tung V, Park H, Kim P, Kong J, Wilson WL. Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor. NATURE NANOTECHNOLOGY 2023; 18:350-356. [PMID: 36690738 DOI: 10.1038/s41565-022-01312-z] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
Tailoring of the propagation dynamics of exciton-polaritons in two-dimensional quantum materials has shown extraordinary promise to enable nanoscale control of electromagnetic fields. Varying permittivities along crystal directions within layers of material systems, can lead to an in-plane anisotropic dispersion of polaritons. Exploiting this physics as a control strategy for manipulating the directional propagation of the polaritons is desired and remains elusive. Here we explore the in-plane anisotropic exciton-polariton propagation in SnSe, a group-IV monochalcogenide semiconductor that forms ferroelectric domains and shows room-temperature excitonic behaviour. Exciton-polaritons are launched in SnSe multilayer plates, and their propagation dynamics and dispersion are studied. This propagation of exciton-polaritons allows for nanoscale imaging of the in-plane ferroelectric domains. Finally, we demonstrate the electric switching of the exciton-polaritons in the ferroelectric domains of this complex van der Waals system. The study suggests that systems such as group-IV monochalcogenides could serve as excellent ferroic platforms for actively reconfigurable polaritonic optical devices.
Collapse
Affiliation(s)
- Yue Luo
- Center for Nanoscale Systems, Harvard University, Cambridge, MA, USA
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dapeng Ding
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Ming-Hui Chiu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Material Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
| | - Xiang Ji
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, Japan
| | - Takashi Taniguchi
- Research Center for Functional Materials Science, National Institute for Materials Science, Ibaraki, Japan
| | - Vincent Tung
- Department of Material Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
| | - Hongkun Park
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - William L Wilson
- Center for Nanoscale Systems, Harvard University, Cambridge, MA, USA.
| |
Collapse
|