A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes

Atomic Layer-Deposited Silane Coupling Agent for Interface Passivation of Quantum Dot Light-Emitting Diodes

Inserting an insulating layer between the charge transport layer (CTL) and quantum dot emitting layer (QDL) is widely used in improving the performance of quantum dot light-emitting diodes (QLEDs). However, the additional layer inevitably leads to energy loss and joule heat. Herein, a monolayer silane coupling agent is used to modify the said interfaces via the self-limiting adsorption effect. Because the ultrathin layers induce negligible series resistance to the device, they can partially passivate the interfacial defects on the electron transport side and help confine the electrons within the QDL on the hole transport side. These interfacial modifications can not only suppress the nonradiative recombination but also slow down the aging of the hole transport layer. The findings here underline a low-temperature adsorption-based strategy for effective interfacial modification which can be used in any layer-by-layer device structures.

A step-scheme-based Cs3Bi2Br9 perovskite quantum dots@mesoporous Nb2O5 photocatalyst with boosted charge separation and CO2 reduction

Solar-energy-powered CO2 reduction into valuable chemical fuels represents a highly promising strategy to address the currently energy and environmental issues. Owing to the nontoxicity and robust reduction capability, lead-free Cs3Bi2Br9 perovskite quantum dots (PQDs) are regarded as an attractive material for CO2 photoreduction. Nevertheless, the potential of their applications in this field has been restricted by the severe charge recombination, resulting in unsatisfactory photocatalytic performance. Herein, a step-scheme-based Cs3Bi2Br9@Nb2O5 (CBB@Nb2O5) nanocomposite was fabricated by embedding the CBB PQDs into mesoporous Nb2O5. Experimental studies, along with theoretical calculations, revealed that the charge migration route in the CBB@Nb2O5 nanocomposite conformed to the step-scheme (S-scheme) mode, enabling effective charge separation and strong redox ability preservation. Profiting from the promoted charge separation, as well as the improved CO2 adsorption contributed by mesoporous Nb2O5, the CBB@Nb2O5 nanocomposite unveiled superior CO2 photoreduction performance, with CO evolution rate reaching 143.63 μmol g-1h-1. The present study provides a potential strategy to manufacture highly-efficient perovskite-based photocatalysts for achieving carbon neutrality.

Anisotropic electronic coupling in three-dimensional assembly of CsPbBr3 quantum dots

Cesium lead halide (CsPbX3, X = Cl, Br, or I) perovskite quantum dots (PeQDs) show promise for next-generation optoelectronics. In this study, we controlled the electronic coupling between PeQD multilayers using a layer-by-layer method and dithiol linkers of varying structures. The energy shift of the first excitonic peak from monolayer to bilayer decreases exponentially with increasing interlayer spacer distance, indicating the resonant tunnelling effect. X-ray diffraction measurements revealed anisotropic inter-PeQD distances in multiple layers. Photoluminescence (PL) analysis showed lower energy emission in the in-plane direction due to the electronic coupling in the out-of-plane direction, supporting the anisotropic electronic state in the PeQD multilayers. Temperature-dependent PL and PL lifetimes indicated changes in exciton behaviour due to the delocalized electronic state in PeQD multilayers. Particularly, the electron-phonon coupling strength increased, and the exciton recombination rate decreased. This is the first study demonstrating controlled electronic coupling in a three-dimensional ordered structure, emphasizing the importance of the anisotropic electronic state for high-performance PeQDs devices.

Short-Wave Infrared Light-Emitting Diodes Using Colloidal CuInS2 Quantum Dots with ZnI2 Dual-Passivation

Short-wave infrared (SWIR) light-emitting diodes (LEDs) have emerged as promising technologies for diverse applications such as optical communication, biomedical imaging, surveillance, and machine vision. Colloidal quantum dots (QDs) are particularly attractive for SWIR LEDs due to their solution processability, compatibility with flexible substrates, and tunable absorption and luminescence. However, the presence of toxic elements or precious metals in most SWIR-emitting QDs poses health, environmental, and cost challenges. In this context, CuInS2 (CIS) QDs are known for low toxicity, cost-effective fabrication, and SWIR-light emitting capability. However, CIS QDs have not yet been directly utilized to fabricate SWIR LEDs to date, which is due to low particle stability, inefficient charge carrier recombination, and significantly blue-shifted luminescence after integrating into LED devices. To address challenges, we propose a dual-passivation strategy using ZnI2 as a chemical additive to enhance both the optical property of plain CIS QDs and charge carrier recombination upon LED device implementation. The resulting CIS-QD-based LEDs exhibit a stable SWIR electroluminescence (EL) peak (over 1000 nm) with a high EL radiance and a record external quantum efficiency in the SWIR region. Our study represents a significant step forward in SWIR-QLED technology, offering a pathway for the development of high-performance, low-cost, and nontoxic SWIR light sources.

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Reducing the size of perovskite crystals to confine excitons and passivating surface defects has fueled a significant advance in the luminescence efficiency of perovskite light-emitting diodes (LEDs). However, the persistent gap between the optical limit of electroluminescence efficiency and the photoluminescence efficiency of colloidal perovskite nanocrystals (PeNCs) suggests that defect passivation alone is not sufficient to achieve highly efficient colloidal PeNC-LEDs. Here, we present a materials approach to controlling the dynamic nature of the perovskite surface. Our experimental and theoretical studies reveal that conjugated molecular multipods (CMMs) adsorb onto the perovskite surface by multipodal hydrogen bonding and van der Waals interactions, strengthening the near-surface perovskite lattice and reducing ionic fluctuations which are related to nonradiative recombination. The CMM treatment strengthens the perovskite lattice and suppresses its dynamic disorder, resulting in a near-unity photoluminescence quantum yield of PeNC films and a high external quantum efficiency (26.1%) of PeNC-LED with pure green emission that matches the Rec.2020 color standard for next-generation vivid displays.

Chemical Reaction Modulated Low-Dimensional Phase Toward Highly Efficient Sky-Blue Perovskite Light-Emitting Diodes

Blue perovskite light-emitting diodes (PeLEDs) are crucial avenues for achieving full-color displays and lighting based on perovskite materials. However, the relatively low external quantum efficiency (EQE) has hindered their progression towards commercial applications. Quasi-two-dimensional (quasi-2D) perovskites stand out as promising candidates for blue PeLEDs, with optimized control over low-dimensional phases contributing to enhanced radiative properties of excitons. Herein, the impact of organic molecular dopants on the crystallization of various n-phase structures in quasi-2D perovskite films. The results reveal that the highly reactive bis(4-(trifluoromethyl)phenyl)phosphine oxide (BTF-PPO) molecule could effectively restrain the formation of organic spacer cation-ordered layered perovskite phases through chemical reactions, simultaneously passivate those uncoordinated Pb2+ defects. Consequently, the prepared PeLEDs exhibited a maximum EQE of 16.6 % (@ 490 nm). The finding provides a new route to design dopant molecules for phase modulation in quasi-2D PeLEDs.

Boosting External Quantum Efficiency of Blue Perovskite QLEDs Exceeding 23% by Trifluoroacetate Passivation and Mixed Hole Transportation Design

Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered a promising display technology due to their wide color gamut for authentic color expression. Currently, the external quantum efficiency (EQE) for state-of-the-art blue perovskite QLEDs is about 15%, which still lags behind its green and red counterparts (>25%) and blue film-based LEDs. Here, blue perovskite QLEDs that achieve an EQE of 23.5% at 490 nm is presented, to the best knowledge, which is the highest value reported among blue perovskite-based LED fields. This impressive efficiency is achieved through a combination of quantum dot (QD) passivation and optimal device design. First, blue mixed halide perovskite CsPbCl3- xBrx QDs passivated by trifluoroacetate exhibit excellent exciton recombination behavior with a photoluminescence quantum yield of 84% due to reducing uncoordinated Pb surface defects. Furthermore, the device is designed by introducing a mixed hole-transport layer (M-HTL) to increase hole injection and transportation capacity and improve carrier balance. It is further found that M-HTL can decrease carrier leakage and increase radiative recombination in the device, evidenced by the visual electroluminescence spectrum at 2.0 V. The work breaks through the EQE gap of 20% for blue perovskite-based QLEDs and significantly promotes their commercialization process.

Eliminating the Adverse Impact of Composition Modulation in Perovskite Light-Emitting Diodes toward Ultra-High Brightness and Stability

Excess ammonium halides as composition additives are widely employed in perovskite light-emitting diodes (PeLEDs), aiming to achieve high performance by controlling crystallinity and passivating defects. However, an in-depth understanding of whether excess organoammonium components affect the film physical/electrical properties and the resultant device instability is still lacking. Here, the trade-off between the performance and stability in high-efficiency formamidinium lead iodide (FAPbI3)-based PeLEDs with excess ammonium halides is pointed, and the underlying mechanism is explored. Systematic experimental and theoretical studies reveal that excess halide salt-induced ion-doping largely alters the PeLEDs properties (e.g., carrier injection, field-dependent ion-drifting, defect physics, and phase stability). A surface clean assisted cross-linking strategy is demonstrated to eliminate the adverse impact of composition modulation and boost the operational stability without sacrificing the efficiency, achieving a high efficiency of 23.6%, a high radiance of 964 W sr-1 m-2 (The highest value for FAPbI3 based PeLEDs), and a prolong lifetime of 106.1 h at large direct current density (100 mA cm-2), concurrently. The findings uncovered an important link between excess halide salts and the device performance, providing a guideline for rational design of stable, bright, and high efficiency PeLEDs.

Surface Treatment with Tailored π-Conjugated Fluorene Derivatives Significantly Enhances the Performance of Perovskite Light-Emitting Diodes

Surface defect passivation and carrier injection regulation have emerged as effective strategies for enhancing the performance of perovskite light-emitting diodes (Pero-LEDs). It usually requires two functional molecules to realize defect passivation and carrier injection regulation separately. In other words, developing one single molecule possessing these capabilities remains challenging. Herein, we utilized π-conjugated fluorene derivatives as surface treatment materials, 9,9-Spirobi[fluorene] (SBF), 9,9-Spirobifluoren-2-yl-diphenylphosphine oxide (SPPO1), and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), to investigate the influence of their chemical structure on device optoelectronic performance, especially for defect passivation and carrier injection regulation. Consequently, the passivation capability of double-bonded SPPO13 surpassed single-bonded SPPO1 and nonbonded SBF, which all showed excellent electron transport properties, enhancing electron injection. The maximum external quantum efficiencies (EQE) for Pero-LEDs treated with SBF, SPPO1, and SPPO13 were 8.13, 17.48, and 22.10%, respectively, exceeding that of the derivative-free device (6.55%). Notably, SPPO13-treated devices exhibited exceptional reproducibility, yielding an average EQE of 20.00 ± 1.10% based on 30 devices. This result emphasizes the potential of tailored fluorene derivatives for enhancing the device performance of Pero-LEDs.

InCl3-Assisted Surface Defects Restoring to Enhance Lead-Free Cs2ZrCl6 Nanocrystals for X-Ray Imaging and Blue LED Applications

As one type of recent emerging lead-free perovskites, Cs2ZrCl6 nanocrystals are widely concerned, benefiting from the eminent designability, high X-ray cutoff efficiency, and favorable stability. Improving the luminescence performance of Cs2ZrCl6 nanocrystals has great importance to cater for practical applications. In view of the surface defects frequently formed by the liquid phase method, the particle morphology and surface quality of this material are expected to be regulated if certain intervention is made in the synthesis process. In the work, differing from normal cell lattice modulation based on the ion doping, the grain size and surface morphology of Cs2ZrCl6 nanocrystals are optimized via adding a certain amount of InCl3 to the synthetic solution. The surface defects are restored to inhibit the defect-induced non-radiative transition, resulting in the improvement of the luminescence properties. Moreover, a flexible Cs2ZrCl6@polydimethylsiloxane film with excellent heat, water, and bending resistance and a light-emitting diode (LED) device are fabricated, exhibiting excellent application potential for X-ray imaging and blue LED.

Band Engineering of Perovskite Quantum Dot Solids for High-Performance Solar Cells

CsPbI3 perovskite quantum dot (PQD) shows high potential for next-generation photovoltaics due to their tunable surface chemistry, good solution-processability and unique photophysical properties. However, the remained long-chain ligand attached to the PQD surface significantly impedes the charge carrier transport within the PQD solids, thereby predominantly influencing the charge extraction of PQD solar cells (PQDSCs). Herein, a ligand-induced energy level modulation is reported for band engineering of PQD solids to improve the charge extraction of PQDSCs. Detailed theoretical calculations and systemic experimental studies are performed to comprehensively understand the photophysical properties of the PQD solids dominated by the surface ligands of PQDs. The results reveal that 4-nitrobenzenethiol and 4-methoxybenzenethiol molecules with different dipole moments can firmly anchor to the PQD surface through the thiol group to modulate the energy levels of PQDs, and a gradient band structure within the PQD solid is subsequently realized. Consequently, the band-engineered PQDSC delivers an efficiency of up to 16.44%, which is one of the highest efficiencies of CsPbI3 PQDSCs. This work provides a feasible avenue for the band engineering of PQD solids by tuning the surface chemistry of PQDs for high-performing solar cells or other optoelectronic devices.

Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display

Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI3 QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m-2, marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m-2. This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.

Efficient and Stable Multicolor Emissions of the Coumarin-Modified Cs3LnCl6 Lead-Free Perovskite Nanocrystals and LED Application

Lanthanide-based lead-free perovskite materials hold great promise for the development of high-resolution full-color displays in the future. Here, various Cs3LnCl6 perovskite nanocrystals (NCs) emitting light across the visible to near-infrared spectrum with remarkably high photoluminescence quantum yield (PLQY) are systemically prepared. Especially, by introducing multifunctional coumarin small molecules into Cs3EuCl6 NCs as an intermediate state, Cs3EuCl6 NCs can achieve an impressive PLQY of 92.4% with pure red emission and an exceptional energy transfer efficiency of nearly 93.2%. Furthermore, the lanthanide-based electroluminescent devices in red, green, and blue are successfully fabricated. Among them, the Cs3EuCl6-NC-based red light-emitting diode (LED) demonstrates a FWHM of 18 nm at 617 nm, an external quantum efficiency up to 5.17%, and a maximum brightness of 2373 cd m-2, which is the most excellent reported for lead-free narrowband (within 20 nm) emission devices. Notably, these devices exhibit an operating half-life of 440 h at a brightness level of 100 cd m-2, surpassing the performance of most reported lead-free perovskite LEDs (PLEDs). This work opens up exciting possibilities for the future commercialization of lanthanide-based PLEDs in the display industry, paving the way for more vibrant, energy-efficient, and long-lasting display technologies.

High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr3 Emitters in a Carrier-Confined Heterostructure

Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.

Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering

Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.

Simultaneously improved photoluminescence, stability, and carrier transport of perovskite nanocrystals by post-synthetic perfluorobutanesulfonic acid treatment

We report a post-synthetic treatment method based on perfluorobutanesulfonic acid (PFBA) to ameliorate the photophysical performance of perovskite nanocrystals. By virtue of the PFBA treatment, both the photoluminescence efficiency and stability of perovskite quantum dot-based colloidal solutions and the electrical conductivity of their close-packed films are simultaneously improved.

Highly Bright and Stable Lead-Free Double Perovskite White Light-Emitting Diodes

Lead-free double perovskites (DPs) are emerging highly stable emitters with efficient broadband self-trapped exciton (STE) photoluminescence (PL), but their low electroluminescent (EL) efficiency is a critical shortcoming. This work promotes the external quantum efficiency (EQE) and luminance of DP-based white light-emitting diode (wLED) with a normal device structure to 0.76% and 2793 cd m-2 via two modifications: This work prevents the formation of adverse metallic silver, spatially confined STE, and lowers local site symmetry in Cs2 Na0.4 Ag0.6 In0.97 Bi0.03 Cl6 DP by terbium doping; and this work develops a guest-host strategy to improve film morphology, reduce defect density, and increase carrier mobility. These alterations cause substantial increase in STE radiative recombination and charge injection efficiency of perovskite layer. Finally, pure white EL with ideal color coordinates of (0.328, 0.329) and a record-breaking optoelectronic performance is achieved by introducing additional green carbon dots in LED to fill the deficient green component.

Rejuvenating Aged Perovskite Quantum Dots for Efficient Solar Cells

Perovskite quantum dots (PQDs) have emerged as one of the most promising candidates for next-generation solar cells owing to its remarkable optoelectronic properties and solution processability. However, the optoelectronic properties of PQDs suffer from severe degradation in storage due to the dynamically binding ligands, predominantly affecting photovoltaic applications. Herein, an in situ defect healing treatment (DHT) is reported to effectively rejuvenate aged PQDs. Systematically, experimental studies and theoretical calculations are performed to fundamentally understand the causes leading to the recovered optoelectronic properties of aged PQDs. The results reveal that the I3 - anions produced from tetra-n-octylammonium iodide and iodine could strongly anchor on the surface matrix defects of aged PQDs, substantially diminishing the nonradiative recombination of photogenerated charge carriers. Meanwhile, an DHT could also renovate the morphology of aged PQDs and thus improve the stacking orientation of PQD solids, substantially ameliorating charge carrier transport within PQD solids. Consequently, by using a DHT, the PQD solar cell (PQDSC) yields a high efficiency of up to 15.88%, which is comparable with the PQDSCs fabricated using fresh PQDs. Meanwhile, the stability of PQDSCs fabricated using the rejuvenated PQDs is also largely improved.

Efficient sky-blue cesium lead bromide light-emitting diodes with enhanced stability via synergistic interfacial induction and polymer scaffold inhibition

All inorganic CsPbX3 perovskite has aroused broad interests in building efficient light-emitting devices with wide color gamut and flexible fabrication process. So far, the realization of high-performance blue perovskite light-emitting devices (PeLEDs) is still a critical challenge. Herein, we propose an interfacial induction strategy to generate low-dimensional CsPbBr3 with sky blue emission by employing γ-aminobutyric acid (GABA) modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The interaction between GABA and Pb2+ inhibited the formation of bulk CsPbBr3 phase. Further assisted by the polymer networks, the sky-blue CsPbBr3 film exhibited much improved stability under both photoluminescence and electrical excitation. This can be ascribed to the scaffold effect and the passivation function of the polymer. Consequently, the obtained sky-blue PeLEDs exhibited an average external quantum efficiency (EQE) of 5.67% (maximum of 7.21%) with a maximum brightness of 3308 cd/m2 and a working lifespan reaching 0.41 h. The strategy in this work provides a new opportunity for exploitation the full potential of blue PeLEDs towards application in lighting and display devices.

Bilayer phosphine oxide modification toward efficient and large-area pure-blue perovskite quantum dot light-emitting diodes

Blue emissive halide perovskite light-emitting diodes (LEDs) are gaining increasing attention. Reducing defects in halide perovskites to improve the performance of the resulting LEDs is a main research direction, but there are limited passivation methods for achieving efficient and spectrally-stable pure-blue LEDs based on mixed-halide perovskites. In this work, double modification layers containing phosphine oxides, i.e., diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1) and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), are developed to passivate mixed-halide perovskite quantum dot (QD) films. The comprehensive spectroscopic and structural characterization results indicate the presence of strong interactions between TSPO1/SPPO13 and the QDs. Besides, the combination of the bilayer exhibits a synergistic hole-blocking effect, improving the charge balance of the LEDs. LEDs based on the QD/TSPO1/SPPO13 films deliver stable electroluminesence at 469 nm and present a maximum external quantum efficiency (EQE) and luminance of 4.87% and 560 cd m-2, respectively. Benefiting from the uniform QD/TSPO1/SPPO13 film over a large area, LEDs with an area of 64 mm2 show a maximum EQE of 3.91%, which represents the first efficient large-area mixed-halide perovskite LED with stable pure-blue emission. This work provides a method to improve the perovskite QDs-based film quality and optoelectronic properties, and is a step toward the fabrication of highly-efficient large-area blue perovskite LEDs.

A ligand strategy retarding monovalent copper oxidation toward achieving Cs3Cu2I5 perovskite emitters with enhanced stability for lighting

0D copper-based perovskites (Cs3Cu2I5) have fascinating optical properties, such as strong exciton binding energy, high photoluminescence quantum yield (PLQY) and large Stokes shifts from self-trapped excitons (STEs), which make them highly considerable candidates in the field of lighting. However, the stability of Cs3Cu2I5 is compromised by the oxidation of Cu+ to Cu2+ during the storage or operation process. Here, we proposed a ligand engineering strategy to improve the stability of Cs3Cu2I5via an organic molecule (ethylenediaminetetraacetic acid, EDTA) with multiple functional groups. The strong interaction between carboxyl groups and Cu+ was evidenced through FTIR and XPS, and it could retard monovalent copper oxidation. After storing for 90 days, the EDTA-engineered Cs3Cu2I5 (EDTA-Cs3Cu2I5) maintained its original crystalline structure, while the control Cs3Cu2I5 exhibited an impurity phase. Through quantitative analysis, the content of Cu2+ in EDTA-Cs3Cu2I5 was found to be 83.9% lower than that in control Cs3Cu2I5. Benefiting from the inhibition of Cu+ oxidation, EDTA-Cs3Cu2I5 exhibited improved light emission stability. For example, the optimized EDTA-Cs3Cu2I5 retained 74.7% of the initial photoluminescence (PL) intensity after 90-day storage under ambient conditions, while the pure Cs3Cu2I5 retained only 41.7%. Furthermore, EDTA could passivate defects and enhance the PL properties of the optimized Cs3Cu2I5, which showed a PLQY of 94.7%, much higher than that of 71.4% for pure Cs3Cu2I5. We further constructed a WLED based on the EDTA-engineered Cs3Cu2I5, which showed CIE at (0.3238, 0.3354), a CRI of 91.7, and a T50 of 361 h. The proposed EDTA ligand strategy provides a new way to regulate the light-emitting properties and stabilities of Cs3Cu2I5 for future industrialization.

All-Thermally Evaporated Blue Perovskite Light-Emitting Diodes for Active Matrix Displays

With the rapid progress of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of active matrix PeLED displays (AM-PeLEDs) is gaining increasing attention. However, the integration of high-resolution PeLED arrays with thin-film transistor backplanes remains a significant challenge for conventional spin-coating techniques. Here, the demonstration of large-area, blue-emitting AM-PeLEDs are demonstrated using a vacuum deposition technique, which is regarded as the most effective route for organic light-emitting diode displays. By the introduction of an in situ passivation strategy, the defects-related nonradiative recombination is largely suppressed, which leads to an improved photoluminescence quantum yield of vapor-deposited blue-emitting perovskites. The as-prepared blue PeLEDs exhibit a peak external quantum efficiency of 2.47% with pure-blue emission at 475 nm, which represents state-of-the-art performance for vapor-deposited pure-blue PeLEDs. Benefiting from the excellent uniformity and compatibility of thermal evaporation, the 6.67-inch blue-emitting AM-PeLED display with a high resolution of 394 pixels per inch is successfully demonstrated. The demonstration of blue-emitting AM-PeLED display represents a crucial step toward full-color perovskite display technology.

Synergistic Enhancement of Near-Infrared Emission in CsPbCl3 Host via Co-Doping with Yb3+ and Nd3+ for Perovskite Light Emitting Diodes

Perovskite nanocrystals (PeNCs) have emerged as a promising class of luminescent materials offering size and composition-tunable luminescence with high efficiency and color purity in the visible range. PeNCs doped with Yb3+ ions, known for their near-infrared (NIR) emission properties, have gained significant attention due to their potential applications. However, these materials still face challenges with weak NIR electroluminescence (EL) emission and low external quantum efficiency (EQE), primarily due to undesired resonance energy transfer (RET) occurring between the host and Yb3+ ions, which adversely affects their emission efficiency and device performance. Herein, we report the synergistic enhancement of NIR emission in a CsPbCl3 host through co-doping with Yb3+/Nd3+ ions for perovskite LEDs (PeLEDs). The co-doping of Yb3+/Nd3+ ions in a CsPbCl3 host resulted in enhanced NIR emission above 1000 nm, which is highly desirable for NIR optoelectronic applications. This cooperative energy transfer between Yb3+ and Nd3+ can enhance the overall efficiency of energy conversion. Furthermore, the PeLEDs incorporating the co-doped CsPbCl3/Yb3+/Nd3+ PeNCs as an emitting layer exhibited significantly enhanced NIR EL compared to the single doped PeLEDs. The optimized co-doped PeLEDs showed improved device performance, including increased EQE of 6.2% at 1035 nm wavelength and low turn-on voltage. Our findings highlight the potential of co-doping with Yb3+ and Nd3+ ions as a strategy for achieving synergistic enhancement of NIR emission in CsPbCl3 perovskite materials, which could pave the way for the development of highly efficient perovskite LEDs for NIR optoelectronic applications.

Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance

Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.

Efficient Perovskite Light-Emitting Diodes with Chemically Bonded Contact and Regulated Charge Behavior

Efficient charge injection and radiative recombination are essential to achieving high-performance perovskite light-emitting diodes (Pero-LEDs). However, the perovskite emission layer (EML) and the electron transport layer (ETL) form a poor physically interfacial contact and non-negligible charge injection barrier, limiting the device performance. Herein, we utilize a phosphine oxide, 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine (PO-T2T), to treat the perovskite/ETL interface and form a chemically bonded contact. Specifically, PO-T2T firmly bonds on the perovskite's surface and grain boundaries through a dative bond, effectively passivating the uncoordinated lead defects. Additionally, PO-T2T has high electron mobility and establishes an electron transport highway to bridge the ETL and EML. As a result, a maximum external quantum efficiency (EQEmax) of 22.06% (average EQEmax of 20.02 ± 1.00%) and maximum luminance (Lmax) of 103286 cd m-2 have been achieved for the champion device. Our results indicate that EML/ETL interface modifications are crucial for the fabrication of highly efficient Pero-LEDs.

Interfacial Passivation Enormously Enhances Electroluminescence of Triphenylphosphine Cu4 I4 Cube

Defect is one of the key factors limiting optoelectronic performances of organic-inorganic hybrid systems. Although high-efficiency bidentate ligands based electroluminescent (EL) clusters reported, until present, only few EL clusters based on monodentate ligands are realized since their structural instability induces more surface/interface defects. Herein, this bottleneck is first overcome in virtue of interfacial passivation by electron transporting layers (ETL). Through using TmPyPB with meta-linked pyridines as ETL, photoluminescent (PL) and EL quantum efficiencies of the simplest monophosphine Cu4 I4 cube [TPP]4 Cu4 I4 are greatly improved by ≈2 and 23 folds, respectively, as well as ≈200 folds increased luminance, corresponding to a huge leap from nearly unlighted (<20 nits) to highly bright (>3000 nits). The passivation effect of TmPyPB on surface defects of cluster layer is embodied as preventing interfacial charge trapping and suppressing exciton nonradiation.

Interface-Induced Crystallinity Enhancement of Perovskite Quantum Dots for Highly Efficient Light-Emitting Diodes

Perovskite quantum dot light-emitting diodes (QLEDs) with high color purity and wide color gamut have good application prospects in the next generation of display technology. However, colloidal perovskite quantum dots (PQDs) may introduce a large number of defects during the film-forming process, which is not conducive to the luminous efficiency of the device. Meanwhile, the disordered film formation of PQDs will form interfacial defects and reduce the device performance. Here, we report an interface-induced crystallinity enhancement (IICE) strategy to increase the crystallinity of PQDs at the hole transport layer (HTL)/PQD interface. As a result, both the Br- vacancies in the PQD film and the interfacial defects were well passivated and the leakage current was also suppressed. We achieved QLEDs with a maximum external quantum efficiency (EQE) of 16.45% and current efficiency (CE) of 61.77 cd/A, showing improved performance to more than twice that of the control devices. The IICE strategy paves a new way to enhance the crystallinity of PQD films, so as to improve the performance of QLEDs for application in the future display field.

Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes

Lead halide perovskite nanocrystals are promising for next-generation high-definition displays, especially in light of their tunable bandgaps, high color purities, and high carrier mobility. Within the past few years, the external quantum efficiency of perovskite nanocrystal-based light-emitting diodes has progressed rapidly, reaching the standard for commercial applications. However, the low operational stability of these perovskite nanocrystal-based light-emitting diodes remains a crucial issue for their industrial development. Recent experimental evidence indicates that the migration of ionic species is the primary factor giving rise to the performance degradation of perovskite nanocrystal-based light-emitting diodes, and ion migration is closely related to the defects on the surface of perovskite nanocrystals and at the grain boundaries of their thin films. In this review, we focus on the central idea of surface reconstruction of perovskite nanocrystals, discuss the influence of surface defects on halide ion migration, and summarize recent advances in resurfacing perovskite nanocrystal strategies toward mitigating halide ion migration to improve the stability of the as-fabricated light-emitting diode devices. From the perspective of perovskite nanocrystal resurfacing, we set out a promising research direction for improving both the spectral and operational stability of perovskite nanocrystal-based light-emitting diodes.

Deep-Blue Perovskite Light-Emitting Diodes Realized by a Dynamic Interfacial Ion Exchange

The external quantum efficiency (EQE) of the sky-blue perovskite light-emitting diodes (PeLEDs) has reached 18.65%. However, the EQE of the deep-blue PeLEDs is still inferior to that of sky-blue PeLEDs, which restricts the PeLED application in displays. Herein, a novel dynamic interfacial ion-exchange technique is developed to obtain deep-blue PeLEDs. By spin-coating quaternary ammonium chloride on top of a quasi-2D green perovskite film, a 68 nm spectral transition from green light emission at 513 nm to deep-blue light emission at 445 nm has been successfully realized. To the best of our knowledge, it is the largest spectrum transition ever achieved. By further introducing tricyclohexylphosphine oxide into the perovskite precursor solution to passivate defects, high-quality deep-blue PeLEDs have been fabricated with color coordinates at (0.13, 0.06). The maximum EQE reaches 1.8%, and the peak luminance reaches 847 cd/m².

Advances in the Application of Perovskite Materials

Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.

Enhanced and stabilized photoluminescence of perovskite cesium lead bromide nanocubes through ordered assemblies

This work clarified the effects of self-assembly of perovskite cesium lead bromide (CsPbBr₃) nanocubes (NCs) covered with didodecyldimethyl ammonium bromide (DDAB) on photoluminescence (PL) properties. Although the PL intensity of isolated NCs was weakened in the solid state even under inert conditions, the quantum yield of PL (PLQY) and the photostability of DDAB-covered NCs were drastically improved by the formation of two-dimensional (2D) ordered arrays on a substrate. The PLQY of the 2D arrays increased to ca. 60% by initial excitation illumination at 468 nm and was maintained for over 4000 h. The improved PL properties are attributable to the fixation of the surface ligand around the NCs in the specific ordered arrays.

Stabilizing FASnI3-based perovskite light-emitting diodes with crystallization control

The toxicity of lead presents a critical challenge for the application of perovskite optoelectronics. Lead-free perovskite solar cells were achieved with formamidinium tin iodide (FASnI₃) perovskites, exhibiting decent power-conversion efficiencies (PCEs) of up to 14%, with >98% of the initial PCE retained after 3000 h of storage. However, when employed in light-emitting applications, FASnI₃-based perovskite LEDs (PeLEDs) show limited stability, with T₅₀ lifetimes of up to 0.25 h at 10 mA cm^-2. Here, we improve the stability of FASnI₃-based PeLEDs through the inclusion of a two-dimensional precursor phenethylamine iodide (PEAI), allowing controlled crystallization of the mixed-dimensional perovskite emitters. The density of defects is found to be reduced, accompanied by the suppression of oxidation from Sn²⁺ to Sn⁴⁺. Using an optimized perovskite composition, we achieve an EQE of 1.5% (a ∼10-fold improvement over the control devices), a maximum radiance of 145 W sr^-1 m^-2, and a record-long T₅₀ lifetime of 10.3 h at 100 mA cm^-2 for FASnI₃-based PeLEDs. Our results illuminate an alternative path toward lead-free PeLED applications.

High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots

Here, we develop an in situ photoluminescence (PL) system to monitor the nucleation and growth of perovskite nanocrystals and control the monomer supply rate to achieve strongly confined and monodispersed quantum dots (QDs) with average size of 3.4 nm. Pure-blue (460 nm wavelength) CsPbBr₃ QDs with near unity PL quantum yield and narrow size distribution (small size dispersion of 9.6%) were thus produced. Light-emitting diodes (LEDs) based on these QDs were prepared by using an all-solution processing route, which showed narrow electroluminescence with full width at half-maximum of 20 nm and a high color purity of 97.3%. The device also had a high external quantum efficiency of 10.1%, maximum luminance of 11 610 cd m^-2, and continuous operation lifetime of 21 h at the initial luminance of 102 cd m^-2, corresponding to the state-of-art for pure-blue perovskite LEDs.

Challenges and developments for the blue perovskite nanocrystal light-emitting diodes

Perovskite nanomaterials have been highly thought as next-generation light emitters after recent development owing to their benefits of simple synthesis, low-cost, large-area, and wide color gamut. Encouragingly, the external quantum efficiencies (EQEs) of green, red, and near-infrared perovskite light-emitting diodes (PeLEDs) have exceeded more than 20%. However, the performance of the blue PeLEDs is still lower than other analogs, which severely limits the applications of PeLEDs in future full-color displays. Herein, we have reviewed the advances in blue perovskite NCs and their applications in blue PeLEDs. Promising blue perovskite emitters and strategies for fabricating highly efficient blue PeLEDs based on perovskite NCs are investigated and highlighted. Moreover, we point out the main challenges in blue perovskite NC LEDs including low electroluminescence efficiency (EL), spectral instability, the difficulty of charge injection, and device optimization. The perspectives for the further development of blue PeLEDs are also presented.

Bulk Perovskite Crystal Properties Determined by Heterogeneous Nucleation and Growth

In metal halide perovskites, charge transport in the bulk of the films is influenced by trapping and release and nonradiative recombination at ionic and crystal defects. Thus, mitigating the formation of defects during the synthesis process of perovskites from precursors is required for better device performance. An in-depth understanding of the nucleation and growth mechanisms of perovskite layers is crucial for the successful solution processing of organic-inorganic perovskite thin films for optoelectronic applications. In particular, heterogeneous nucleation, which occurs at the interface, must be understood in detail, as it has an effect on the bulk properties of perovskites. This review presents a detailed discussion on the controlled nucleation and growth kinetics of interfacial perovskite crystal growth. Heterogeneous nucleation kinetics can be controlled by modifying the perovskite solution and the interfacial properties of perovskites adjacent to the underlaying layer and to the air interface. As factors influencing the nucleation kinetics, the effects of surface energy, interfacial engineering, polymer additives, solution concentration, antisolvents, and temperature are discussed. The importance of the nucleation and crystal growth of single-crystal, nanocrystal, and quasi-two-dimensional perovskites is also discussed with respect to the crystallographic orientation.

Comprehensive Passivation for High-Performance Quasi-2D Perovskite LEDs

Quasi-2D perovskites have demonstrated great application potential in light-emitting diodes (LEDs). Defect passivation with chemicals plays a critical role to achieve high efficiency. However, there are still challenges in comprehensively passivating the defects distributed at surface, bulk, and buried interface of quasi-2D perovskite emitting films, hindering the further improvement of device performance. Herein, 9,9-substituted fluorene derivatives with different terminal functional groups are developed tactfully to realize comprehensive passivation, which greatly contributes to reducing nonradiative recombination at surface, suppressing ion migration in bulk, and filling interfacial charge traps at buried interface, respectively. Eventually, quasi-2D perovskite LEDs have an increased external quantum efficiency from 18.2% to 23.2%, improved operation lifetime by more than six times and lower turn-on voltage simultaneously. Here the importance of comprehensive passivation is highlighted and guidelines for the design and application of passivators for perovskite optoelectronics are provided.

Ligands in Lead Halide Perovskite Nanocrystals: From Synthesis to Optoelectronic Applications

Ligands are indispensable for perovskite nanocrystals (NCs) throughout the whole lifetime, as they not only play key roles in the controllable synthesis of NCs with different sizes and shapes, but also act as capping shell that affects optical properties and electrical coupling of NCs. Establishing a systematic understanding of the relationship between ligands and perovskite NCs is significant to enable many potential applications of NCs. This review mainly focuses on the influence of ligands on perovskite NCs. First of all, the ligands-dominated size and shape control of NCs is discussed. Whereafter, the surface defects of NCs and the bonding between ligands and perovskite NCs are classified, and corresponding post-treatment of surface defects via ligands is also summarized. Furthermore, advances in engineering the ligands towards the high performance of optoelectronic devices based on perovskite NCs, including photodetector, solar cell, light emitting diode (LED), and laser, and finally to potential challenges are also discussed.

Responsive Optical Materials Based on Ligand-Free Perovskite Quantum Dots Embedded in Mesoporous Scaffolds

Herein we show that dispersing inorganic cesium lead bromide (CsPbBr₃) perovskite quantum dots (QDs) in optical quality films, possessing an accessible and controlled pore size distribution, gives rise to fluorescent materials with a controlled and highly sensitive response to ambient changes. A scaffold-based synthesis approach is employed to obtain ligand-free QDs, whose pristine surface endows them with high sensitivity to the presence of different vapors in their vicinity. At the same time, the void network of the host offers a means to gradually expose the embedded QDs to such vapors. Under these conditions, the luminescent response of the QDs is mediated by the mesostructure of the matrix, which determines the rate at which vapor molecules will adsorb onto the pore walls and, eventually, condensate, filling the void space. With luminescence quantum yields as high as 60%, scaffold-supported ligand-free perovskite nanocrystals display intense photoemission signals over the whole process, as well as high photo- and chemical stability, which allows illuminating them for long periods of time and recovering the original response upon desorption of the condensed phase. The results herein presented open a new route to explore the application of perovskite QD-based materials in sensing.

In situ interfacial passivation with an arylphosphine oxide and phosphonate electron transporting layer for efficient all-solution-processed PeQLEDs

Perovskite quantum dot light-emitting diodes (PeQLEDs) have emerged as a promising candidate for high-quality lightings and displays, where an electron transporting layer (ETL) is required to achieve balanced charge transport and thus high performance. However, the ETL is often thermally-deposited under vacuum, since the low-cost solution process would damage the underlying perovskite quantum dots (PeQDs). Here, we demonstrate efficient all-solution-processed PeQLEDs based on arylphosphine oxide (SPPO13) and phosphonate (TPPO) as the ETL. Benefitting from the coordination between PO and exposed Pb atoms, in situ interfacial passivation occurs during the solution deposition of SPPO13 or TPPO on PeQDs. As a result, bilayer films (PeQDs/ETL) exhibit improved photoluminescence quantum yields and prolonged lifetimes compared with single layer PeQDs. Correspondingly, all-solution-processed PeQLEDs are fabricated successfully via an orthogonal solvent strategy, revealing bright green emission with a promising current efficiency of 24.1 cd A^-1 (12.1 lm W^-1, 6.47%) and CIE coordinates of (0.12, 0.79).

Temperature-Dependent Photoluminescence of CdS/ZnS Core/Shell Quantum Dots for Temperature Sensors

Exploring the temperature-dependent photoluminescence (PL) properties of quantum dots (QDs) is not only important for understanding the carrier recombination processes in QD-based devices but also critical for expanding their special applications at different temperatures. However, there is still no clear understanding of the optical properties of CdS/ZnS core/shell QDs as a function of temperature. Herein, the temperature-dependent PL spectra of CdS/ZnS core/shell QDs were studied in the temperature range of 77-297 K. It was found that the band-edge emission (BEE) intensity decreases continuously with increasing temperature, while the surface-state emission (SSE) intensity first increases and then decreases. For BEE intensity, in the low temperature range, a small activation energy (29.5 meV) in the nonradiative recombination process led to the decrease of PL intensity of CdS/ZnS core/shell QDs; and at high temperature the PL intensity attenuation was caused by the thermal escape process. On the other hand, the temperature-dependent variation trend of the SSE intensity was determined by the competition of the trapping process of the surface trap states and the effect of thermally activated non-radiative defects. As the temperature increased, the PL spectra showed a certain degree of redshift in the peak energies of both band-edge and surface states and the PL spectrum full width at half-maximum (FWHM) increases, which was mainly due to the coupling of exciton and acoustic phonon. Furthermore, the CIE chromaticity coordinates turned from (0.190, 0.102) to (0.302, 0.194), which changed dramatically with temperature. The results indicated that the CdS/ZnS core/shell QDs are expected to be applied in temperature sensors.

Recent progress and future prospects on halide perovskite nanocrystals for optoelectronics and beyond

As an emerging new class of semiconductor nanomaterials, halide perovskite (ABX3, X = Cl, Br, or I) nanocrystals (NCs) are attracting increasing attention owing to their great potential in optoelectronics and beyond. This field has experienced rapid breakthroughs over the past few years. In this comprehensive review, halide perovskite NCs that are either freestanding or embedded in a matrix (e.g., perovskites, metal-organic frameworks, glass) will be discussed. We will summarize recent progress on the synthesis and post-synthesis methods of halide perovskite NCs. Characterizations of halide perovskite NCs by using a variety of techniques will be present. Tremendous efforts to tailor the optical and electronic properties of halide perovskite NCs in terms of manipulating their size, surface, and component will be highlighted. Physical insights gained on the unique optical and charge-carrier transport properties will be provided. Importantly, the growing potential of halide perovskite NCs for advancing optoelectronic applications and beyond including light-emitting devices (LEDs), solar cells, scintillators and X-ray imaging, lasers, thin-film transistors (TFTs), artificial synapses, and light communication will be extensively discussed, along with prospecting their development in the future.

Fabrication of ZnO dual electron transport layer via atomic layer deposition for highly stable and efficient CsPbBr3perovskite nanocrystals light-emitting diodes

Electron transport layers (ETLs) are important components of high-performance all-inorganic perovskite nanocrystals light-emitting diodes (PNCs-LED). Herein, atomic layer deposition (ALD) of inorganic ZnO layer is combined to the organic 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) to form dual ETLs to enhance both the efficiency and stability of PNCs-LED simultaneously. Optimization of ZnO thickness suggested that 10 cycles ALD yields the best performance of the devices. The external quantum efficiency of the device reaches to 7.21% with a low turn-on voltage (2.4 V). Impressively, the dual ETL PNCs-LED realizes maximumT₅₀lifetime of 761 h at the initial luminance of 100 nit, which is one of the top lifetimes among PNCs-LEDs up to now. The improved performance of dual ETL PNCs-LED is mainly due to the improved charge transport balance with favorable energy level matching. These findings present a promising strategy to modify the function layer via ALD to achieve both highly efficient and stable PNCs-LED.

Recent progress of single-halide perovskite nanocrystals for advanced displays

Light-emitting diodes based on lead halide perovskite nanocrystals (LHP NCs) have shown an astonishing increase in efficiency in just several years of academic research, reaching high external quantum efficiencies exceeding 20%. The extensive color-tunability and narrow emission bandwidth of LHP NCs, in particular, are of great importance in the creation of the next generation of ultra-high-definition displays, as defined by the Rec. 2020 standard recommendation. In fact, whereas the colour of LHP NCs can be easily tuned by the compositions of halogens, the ion migration in mixed-halide perovskites under the electric field will seriously affect the spectral stability and operational lifetimes of perovskite light-emitting diodes (PeLEDs). Therefore, it is essential to realize efficient colour-saturated PeLEDs based on single-halide perovskite NCs. In this review, we focus on the recent progress in LHP NC-based PeLEDs and highlight the strategy of tuning the spectral emission based on quantum confinement or cation alloying/doping in single-halide perovskite NCs. Finally, we will give an outlook on future research avenues for preparing high-efficiency pure green, red and blue PeLEDs based on single-halide perovskite NCs.

Encapsulation of Dual-Passivated Perovskite Quantum Dots for Bio-Imaging

Due to their marvelous electrical and optical properties, perovskite nanocrystals have reached remarkable landmarks in solar cells, light-emitting diodes, and photodetectors. However, the intrinsic instability of ionic perovskites, which would undergo an undesirable phase transition and decompose rapidly in ambient humidity, limits their long-term practical deployment. To address this challenge, halogenated trimethoxysilane as the passivation additive is chosen, which utilizes simultaneous halide and silica passivation to enhance the stability of perovskite nanoparticles via a dual-passivation mechanism. The processable nanoparticles show high photoluminescence quantum yield, tunable fluorescence wavelength, and excellent resistance against air and water, highlighting great potential as green to deep-red bio-labels after further phospholipid encapsulation. This work demonstrates that the dual-passivation mechanism could be used to maintain the long-term stability of ionic crystals, which sheds light on the opportunity of halide perovskite nanoparticles for usage in a humid environment.

Stability of Perovskite Light-Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects

Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.

Charge Carriers Trapping by the Full-Configuration Defects in Metal Halide Perovskites Quantum Dots

Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interest in the photovoltaic and photoelectric disciplines because of their marvelous properties and size characteristics. However, one of the key problems of how to systematically analyze charge carriers trapped by defects is still a challenging task. Here, we study multiphonon processes of the charge carrier trapping by various defects in MHPQDs based on the well-known Huang-Rhys model, in which a method of a full-configuration defect, including different defect species with variable depth and lattice relaxation strength, is developed by introducing a localization parameter in the quantum defect model. With the help of this method, these fast trapping channels for charge carriers transferring from the quantum dot ground state to different defects are found. Furthermore, the dependence of the trapping time on the radius of quantum dot, the defect depth, and temperature is given. These results not only enrich the knowledge of charge carrier trapping processes by defects, but also bring light to the designs of MHPQDs-based photovoltaic and photoelectric devices.

Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI3 Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand

CsPbI₃ quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge transportation and extraction in PV devices. In this work, we use a fullerene derivative with the carboxylic anchor group ([SAM]C60) as the semiconductor ligand and build the type II heterojunction system of CsPbI₃ QDs and [SAM]C60 molecules. We find their combination enables obvious exciton dislocation and highly efficient photogenerated charge extraction. After the introduction of [SAM]C₆₀, the exciton-binding energy of CsPbI₃ decreases from 30 meV to 7 meV and the fluorescence emission mechanism also exhibits obvious changes. Transient absorption spectroscopy visualizes a ~5 ps electron extraction rate in this system. The findings gained here may guide the development of perovskite QD devices.

Enriched-Bromine Surface State for Stable Sky-Blue Spectrum Perovskite QLEDs With an EQE of 14.6

Halogen vacancies are of great concern in blue-emitting perovskite quantum-dot light-emitting diodes because they affect their efficiency and spectral shift. Here, an enriched-bromine surface state is realized using a facile strategy that employs a PbBr₂ stock solution for anion exchange based on Cd-doped perovskite quantum dots. It is found that the doped Cd ions are expected to reduce the formation energy of halogen vacancies filled by the external bromine ions, and the excess free bromine ions in solution are enriched in the surface by anchoring with halogen vacancies as sites, accompanied with the shedding of surface long-chain ligands during the anion exchange process, resulting in a Br-rich and "neat" surface. Moreover, the surface state exhibits good passivation of the surface defects of the controlled perovskite QDs and simultaneously increases the exciton binding energy, leading to excellent optical properties and stability. Finally, the sky-blue emitting perovskite quantum-dot light-emitting diodes (QLEDs) (490 nm) are conducted with a record external quantum efficiency of 14.6% and current efficiency of 19.9 cd A^-1 . Meanwhile, the electroluminescence spectra exhibit great stability with negligible shifts under a constant operating voltage from 3 to 7 V. This strategy paves the way for improving the efficiency and stability of perovskite QLEDs.

Carbazole-Containing Polymer-Assisted Trap Passivation and Hole-Injection Promotion for Efficient and Stable CsCu2 I3 -Based Yellow LEDs

Perovskite light-emitting diodes (LEDs) are emerging light sources for next-generation lighting and display technologies; however, their development is greatly plagued by difficulty in achieving yellow electroluminescence, environmental instability, and lead toxicity. Copper halide CsCu2 I3 with intrinsic yellow emission emerges as a highly promising candidate for eco-friendly LEDs, but the electroluminescent performance is limited by defect-related nonradiative losses and inefficient charge transport/injection. To solve these issues, a hole-transporting poly(9-vinlycarbazole) (PVK)-incorporated engineering into CsCu2 I3 emitter is proposed. PVK with carbazole groups is permeated at the grain boundaries of CsCu2 I3 films by interacting with the uncoordinated Cu+ , reducing the CuCs and CuI antisite defects to increase the radiative recombination and enhancing the hole mobility to balance the charge transport/injection, resulting in substantially enhanced device performances. Eventually, the yellow LEDs exhibit an 8.5-fold enhancement of external quantum efficiency, and the half-lifetime reaches 14.6 h, representing the most stable yellow LEDs based on perovskite systems reported so far.

Red Perovskite Light-Emitting Diodes with Efficiency Exceeding 25% Realized by Co-Spacer Cations

Perovskite light-emitting diodes (PeLEDs) have received great attention in recent years due to their narrow emission bandwidth and tunable emission spectrum. Efficient red emission is one of most important parts for lighting and displays. Quasi-2D perovskites can deliver high emission efficiency due to the strong carrier confinement, while the external quantum efficiencies (EQE) of red quasi-2D PeLEDs are inefficient at present, which is due to the complex distribution of different n-value phases in quasi-2D perovskite films. In this work, the phase distribution of the quasi-2D perovskite is finely controlled by mixing two different large organic cations, which effectively reduces the amount of smaller n-index phases, meanwhile the passivation of lead and halide defects in perovskite films is realized. Accordingly, the PeLEDs show 25.8% EQE and 1300 cd m^-2 maximum brightness at 680 nm, which exhibits the highest performance for red PeLEDs up to now.