1
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Nachawaty A, Chen T, Ibrahim F, Wang Y, Hao Y, Dalla Francesca K, Tyagi P, Da Costa A, Ferri A, Liu C, Li X, Chshiev M, Migot S, Badie L, Jahjah W, Desfeux R, Le Breton JC, Schieffer P, Le Pottier A, Gries T, Devaux X, Lu Y. Voltage-Driven Fluorine Motion for Novel Organic Spintronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2401611. [PMID: 38848668 DOI: 10.1002/adma.202401611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 05/04/2024] [Indexed: 06/09/2024]
Abstract
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long-term aspiration because it allows to realize multifunctional devices, such as multi-state memory and tunable plasticity for synaptic function. However, the reported TMR in different multiferroic tunnel junctions is limited to 100%. This work demonstrates a giant TMR of -266% in La0.6Sr0.4MnO3(LSMO)/poly(vinylidene fluoride)(PVDF)/Co memristor with thin organic barrier. Different from the ferroelectricity-based memristors, this work discovers that the voltage-driven florine (F) motion in the junction generates a huge reversible resistivity change up to 106% with nanosecond (ns) timescale. Removing F from PVDF layer suppresses the dipole field in the tunneling barrier, thereby significantly enhances the TMR. Furthermore, the TMR can be tuned by different polarizing voltage due to the strong modification of spin-polarization at the LSMO/PVDF interface upon F doping. Combining of high TMR in the organic memristor paves the way to develop high-performance multifunctional devices for storage and neuromorphic applications.
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Affiliation(s)
- Abir Nachawaty
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Tongxin Chen
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Fatima Ibrahim
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
| | - Yuchen Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Yafei Hao
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
- Physics Department, Zhejiang Normal University, Jinhua, 321004, China
| | - Kevin Dalla Francesca
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Priyanka Tyagi
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Antonio Da Costa
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Anthony Ferri
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Chuanchuan Liu
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
- Institut Universitaire de France, Paris, 75231, France
| | - Sylvie Migot
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Laurent Badie
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Walaa Jahjah
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Rachel Desfeux
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | | | - Philippe Schieffer
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Arnaud Le Pottier
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Thomas Gries
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Xavier Devaux
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Yuan Lu
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
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2
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Postiglione WM, Yu G, Chaturvedi V, Zhou H, Heltemes K, Jacobson A, Greven M, Leighton C. Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La 0.5Sr 0.5CoO 3-δ. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19184-19197. [PMID: 38564510 DOI: 10.1021/acsami.4c01336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.
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Affiliation(s)
- William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Guichuan Yu
- Minnesota Supercomputing Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States
- Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Kei Heltemes
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Andrew Jacobson
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Martin Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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3
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Hasan MU, Kossak AE, Beach GSD. Large exchange bias enhancement and control of ferromagnetic energy landscape by solid-state hydrogen gating. Nat Commun 2023; 14:8510. [PMID: 38129380 PMCID: PMC10740009 DOI: 10.1038/s41467-023-43955-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 11/24/2023] [Indexed: 12/23/2023] Open
Abstract
Voltage control of exchange bias is desirable for spintronic device applications, however dynamic modulation of the unidirectional coupling energy in ferromagnet/antiferromagnet bilayers has not yet been achieved. Here we show that by solid-state hydrogen gating, perpendicular exchange bias can be enhanced by > 100% in a reversible and analog manner, in a simple Co/Co0.8Ni0.2O heterostructure at room temperature. We show that this phenomenon is an isothermal analog to conventional field-cooling and that sizable changes in average coupling energy can result from small changes in AFM grain rotatability. Using this method, we show that a bi-directionally stable ferromagnet can be made unidirectionally stable, with gate voltage alone. This work provides a means to dynamically reprogram exchange bias, with broad applicability in spintronics and neuromorphic computing, while simultaneously illuminating fundamental aspects of exchange bias in polycrystalline films.
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Affiliation(s)
- M Usama Hasan
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1000, Bangladesh
| | - Alexander E Kossak
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Geoffrey S D Beach
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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4
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Ma Z, Fuentes-Rodriguez L, Tan Z, Pellicer E, Abad L, Herrero-Martín J, Menéndez E, Casañ-Pastor N, Sort J. Wireless magneto-ionics: voltage control of magnetism by bipolar electrochemistry. Nat Commun 2023; 14:6486. [PMID: 37838719 PMCID: PMC10576778 DOI: 10.1038/s41467-023-42206-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Accepted: 09/28/2023] [Indexed: 10/16/2023] Open
Abstract
Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in a wireless manner. Induced polarization in the conducting material immersed in the electrolyte, without direct wire contact, promotes wireless bipolar electrochemistry, an alternative pathway to achieve voltage-driven control of magnetism based on the same electrochemical processes involved in direct-contact magneto-ionics. A significant tunability of magnetization is accomplished for cobalt nitride thin films, including transitions between paramagnetic and ferromagnetic states. Such effects can be either volatile or non-volatile depending on the electrochemical cell configuration. These results represent a fundamental breakthrough that may inspire future device designs for applications in bioelectronics, catalysis, neuromorphic computing, or wireless communications.
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Affiliation(s)
- Zheng Ma
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Laura Fuentes-Rodriguez
- Institut de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
| | - Zhengwei Tan
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Eva Pellicer
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain
| | - Llibertat Abad
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain
| | | | - Enric Menéndez
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain.
| | - Nieves Casañ-Pastor
- Institut de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Vallès, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, Barcelona, 08010, Spain.
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5
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Ameziane M, Huhtasalo J, Flajšman L, Mansell R, van Dijken S. Solid-State Lithium Ion Supercapacitor for Voltage Control of Skyrmions. NANO LETTERS 2023; 23:3167-3173. [PMID: 37053030 PMCID: PMC10141402 DOI: 10.1021/acs.nanolett.2c04731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 04/01/2023] [Indexed: 06/19/2023]
Abstract
Ionic control of magnetism gives rise to high magnetoelectric coupling efficiencies at low voltages, which is essential for low-power magnetism-based nonconventional computing technologies. However, for on-chip applications, magnetoionic devices typically suffer from slow kinetics, poor cyclability, impractical liquid architectures, or strong ambient effects. As a route to overcoming these problems, we demonstrate a LiPON-based solid-state ionic supercapacitor with a magnetic Pt/Co40Fe40B20/Pt thin-film electrode which enables voltage control of a magnetic skyrmion state. Skyrmion nucleation and annihilation are caused by Li ion accumulation and depletion at the magnetic interface under an applied voltage. The skyrmion density can be controlled through dc applied voltages or through voltage pulses. The skyrmions are nucleated by single 60 μs voltage pulses, and devices are cycled 750000 times without loss of electrical performance. Our results demonstrate a simple and robust approach to ionic control of magnetism in spin-based devices.
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6
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Jensen CJ, Quintana A, Quarterman P, Grutter AJ, Balakrishnan PP, Zhang H, Davydov AV, Zhang X, Liu K. Nitrogen-Based Magneto-ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures. ACS NANO 2023; 17:6745-6753. [PMID: 36995303 PMCID: PMC10950296 DOI: 10.1021/acsnano.2c12702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid-state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co0.7Fe0.3/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5 and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta capping layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices.
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Affiliation(s)
- Christopher J Jensen
- Physics Department, Georgetown University, Washington, D.C. 20057, United States
| | - Alberto Quintana
- Physics Department, Georgetown University, Washington, D.C. 20057, United States
| | - Patrick Quarterman
- NIST Center for Neutron Research, NCNR, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Alexander J Grutter
- NIST Center for Neutron Research, NCNR, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Purnima P Balakrishnan
- NIST Center for Neutron Research, NCNR, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Huairuo Zhang
- Theiss Research, Inc., La Jolla, California 92037, United States
- NIST Materials Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Albert V Davydov
- NIST Materials Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Xixiang Zhang
- King Abdullah University of Science & Technology, Thuwal 23955-6900, Saudi Arabia
| | - Kai Liu
- Physics Department, Georgetown University, Washington, D.C. 20057, United States
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7
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Tan Z, Ma Z, Fuentes L, Liedke MO, Butterling M, Attallah AG, Hirschmann E, Wagner A, Abad L, Casañ-Pastor N, Lopeandia AF, Menéndez E, Sort J. Regulating Oxygen Ion Transport at the Nanoscale to Enable Highly Cyclable Magneto-Ionic Control of Magnetism. ACS NANO 2023; 17:6973-6984. [PMID: 36972329 PMCID: PMC10100572 DOI: 10.1021/acsnano.3c01105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Accepted: 03/21/2023] [Indexed: 06/18/2023]
Abstract
Magneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties in (i) withstanding high electric fields without electric pinholes and (ii) maintaining stable ion transport during long-term actuation. In turn, the use of liquid electrolytes can result in poor cyclability, thus limiting their applicability. Here we propose a nanoscale-engineered magneto-ionic architecture (comprising a thin solid electrolyte in contact with a liquid electrolyte) that drastically enhances cyclability while preserving sufficiently high electric fields to trigger ion motion. Specifically, we show that the insertion of a highly nanostructured (amorphous-like) Ta layer (with suitable thickness and electric resistivity) between a magneto-ionic target material (i.e., Co3O4) and the liquid electrolyte increases magneto-ionic cyclability from <30 cycles (when no Ta is inserted) to more than 800 cycles. Transmission electron microscopy together with variable energy positron annihilation spectroscopy reveals the crucial role of the generated TaOx interlayer as a solid electrolyte (i.e., ionic conductor) that improves magneto-ionic endurance by proper tuning of the types of voltage-driven structural defects. The Ta layer is very effective in trapping oxygen and hindering O2- ions from moving into the liquid electrolyte, thus keeping O2- motion mainly restricted between Co3O4 and Ta when voltage of alternating polarity is applied. We demonstrate that this approach provides a suitable strategy to boost magneto-ionics by combining the benefits of solid and liquid electrolytes in a synergetic manner.
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Affiliation(s)
- Zhengwei Tan
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Zheng Ma
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Laura Fuentes
- Institut
de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
- Centre Nacional
de Microelectrònica, Institut de
Microelectrònica de Barcelona-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Maciej Oskar Liedke
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Maik Butterling
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Ahmed G. Attallah
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Eric Hirschmann
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Andreas Wagner
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Llibertat Abad
- Centre Nacional
de Microelectrònica, Institut de
Microelectrònica de Barcelona-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Nieves Casañ-Pastor
- Institut
de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Aitor F. Lopeandia
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, 08193 Barcelona, Spain
| | - Enric Menéndez
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Jordi Sort
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
- Institució
Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
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8
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Ye X, Zhu X, Yang H, Duan J, Gao S, Sun C, Liu X, Li RW. Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206824. [PMID: 36683213 DOI: 10.1002/smll.202206824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Nanoionic technologies are identified as a promising approach to modulating the physical properties of solid-state dielectrics, which have resulted in various emergent nanodevices, such as nanoionic resistive switching devices and magnetoionic devices for memory and computing applications. Previous studies are limited to single-type ion manipulation, and the investigation of multiple-type ion modulation on the coupled magnetoelectric effects, for developing information devices with multiple integrated functionalities, remains elusive. Here, a dual-ion solid-state magnetoelectric heterojunction based on Pt/HfO2- x /NiOy /Ni with reconfigurable magnetoresistance (MR) characteristics is reported for in-memory encryption. It is shown that the oxygen anions and nickel cations can be selectively driven by voltages with controlled polarity and intensity, which concurrently change the overall electrical resistance and the interfacial magnetic coupling, thus significantly modulate the MR symmetry. Based on this device, a magnetoelectric memory prototype array with in-memory encryption functionality is designed for the secure storage of image and digit information. Along with the advantages including simple structure, multistate encryption, good reversibility, and nonvolatile modulation capability, this proof-of-concept device opens new avenues toward next-generation compact electronics with integrated information functionalities.
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Affiliation(s)
- Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jipeng Duan
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
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9
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Tan Z, de Rojas J, Martins S, Lopeandia A, Quintana A, Cialone M, Herrero-Martín J, Meersschaut J, Vantomme A, Costa-Krämer JL, Sort J, Menéndez E. Frequency-dependent stimulated and post-stimulated voltage control of magnetism in transition metal nitrides: towards brain-inspired magneto-ionics. MATERIALS HORIZONS 2023; 10:88-96. [PMID: 36305823 PMCID: PMC9810105 DOI: 10.1039/d2mh01087a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/12/2022] [Indexed: 06/16/2023]
Abstract
Magneto-ionics, which deals with the change of magnetic properties through voltage-driven ion migration, is expected to be one of the emerging technologies to develop energy-efficient spintronics. While a precise modulation of magnetism is achieved when voltage is applied, much more uncontrolled is the spontaneous evolution of magneto-ionic systems upon removing the electric stimuli (i.e., post-stimulated behavior). Here, we demonstrate a voltage-controllable N ion accumulation effect at the outer surface of CoN films adjacent to a liquid electrolyte, which allows for the control of magneto-ionic properties both during and after voltage pulse actuation (i.e., stimulated and post-stimulated behavior, respectively). This effect, which takes place when the CoN film thickness is below 50 nm and the voltage pulse frequency is at least 100 Hz, is based on the trade-off between generation (voltage ON) and partial depletion (voltage OFF) of ferromagnetism in CoN by magneto-ionics. This novel effect may open opportunities for new neuromorphic computing functions, such as post-stimulated neural learning under deep sleep.
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Affiliation(s)
- Zhengwei Tan
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Julius de Rojas
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Sofia Martins
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Aitor Lopeandia
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, E-08193 Barcelona, Spain
| | - Alberto Quintana
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, E-08193 Barcelona, Spain
| | - Matteo Cialone
- CNR-SPIN Genova, Corso F. M. Perrone 24, 16152 Genova, Italy
| | | | | | - André Vantomme
- Quantum Solid State Physics, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
| | - José L Costa-Krämer
- IMN-Instituto de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid, Spain
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
| | - Enric Menéndez
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
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10
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Martins S, Ma Z, Solans-Monfort X, Sodupe M, Rodriguez-Santiago L, Menéndez E, Pellicer E, Sort J. Enhancing magneto-ionic effects in cobalt oxide films by electrolyte engineering. NANOSCALE HORIZONS 2022; 8:118-126. [PMID: 36437747 DOI: 10.1039/d2nh00340f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Electric-field-driven ion motion to tailor magnetic properties of materials (magneto-ionics) offers much promise in the pursuit of voltage-controlled magnetism for highly energy-efficient spintronic devices. Electrolyte gating is a relevant means to create intense electric fields at the interface between magneto-ionic materials and electrolytes through the so-called electric double layer (EDL). Here, improved magneto-ionic performance is achieved in electrolyte-gated cobalt oxide thin films with the addition of inorganic salts (potassium iodide, potassium chloride, and calcium tetrafluoroborate) to anhydrous propylene carbonate (PC) electrolyte. Ab initio molecular dynamics simulations of the EDL structure show that K+ is preferentially located on the cobalt oxide surface and KI (when compared to KCl) favors the accumulation of positive charge close to the surface. It is demonstrated that room temperature magneto-ionics in cobalt oxide thin films is dramatically enhanced in KI-containing PC electrolyte at an optimum concentration, leading to 11-fold increase of generated magnetization and 35-fold increase of magneto-ionic rate compared to bare PC.
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Affiliation(s)
- Sofia Martins
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Zheng Ma
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Xavier Solans-Monfort
- Departament de Química, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Mariona Sodupe
- Departament de Química, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Luis Rodriguez-Santiago
- Departament de Química, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Enric Menéndez
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Eva Pellicer
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
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11
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Wang Q, Gu Y, Chen C, Pan F, Song C. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities. J Phys Chem Lett 2022; 13:10065-10075. [PMID: 36264651 DOI: 10.1021/acs.jpclett.2c02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of mutually coupled degrees of freedom and tunable magneto-ionic properties. In this Perspective, we consider oxide spintronics as a knot of physics and chemistry and mainly discuss two current hot topics: spin-charge interconversion and magneto-ionics. First, spin-charge interconversion is focused on oxide films and heterostructures including 4d/5d heavy metal oxides (e.g., SrIrO3) and two-dimensional electron gases. Based on spin-charge interconversion, charge currents can be transformed to spin currents and generate spin-orbit torque in oxide/metal and all-oxide heterostructures. Additionally, the voltage control of magnetism in TMOs by the magneto-ionic pathway has rapidly accelerated during the past few years due to the versatile advantages of effective control, nonvolatile nature, low power cost, etc. Typical magneto-ionic oxide systems and corresponding physicochemical mechanisms will be discussed. Finally, further developments of oxide spintronics are envisioned, including material discovery, physics exploration, device design, and manipulation methods.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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12
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Tan Z, Martins S, Escobar M, de Rojas J, Ibrahim F, Chshiev M, Quintana A, Lopeandia A, Costa-Krämer JL, Menéndez E, Sort J. From Binary to Ternary Transition-Metal Nitrides: A Boost toward Nitrogen Magneto-Ionics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44581-44590. [PMID: 36129787 PMCID: PMC9542705 DOI: 10.1021/acsami.2c12847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Accepted: 09/13/2022] [Indexed: 06/15/2023]
Abstract
Magneto-ionics is an emerging actuation mechanism to control the magnetic properties of materials via voltage-driven ion motion. This effect largely relies on the strength and penetration of the induced electric field into the target material, the amount of generated ion transport pathways, and the ionic mobility inside the magnetic media. Optimizing all these factors in a simple way is a huge challenge, although highly desirable for technological applications. Here, we demonstrate that the introduction of suitable transition-metal elements to binary nitride compounds can drastically boost magneto-ionics. More specifically, we show that the attained magneto-ionic effects in CoN films (i.e., saturation magnetization, toggling speeds, and cyclability) can be drastically enhanced through 10% substitution of Co by Mn in the thin-film composition. Incorporation of Mn leads to transformation from nanocrystalline into amorphous-like structures, as well as from metallic to semiconducting behaviors, resulting in an increase of N-ion transport channels. Ab initio calculations reveal a lower energy barrier for CoMn-N compared to Co-N that provides a fundamental understanding of the crucial role of Mn addition in the voltage-driven magnetic effects. These results constitute an important step forward toward enhanced voltage control of magnetism via electric field-driven ion motion.
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Affiliation(s)
- Zhengwei Tan
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Sofia Martins
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Michael Escobar
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Julius de Rojas
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
- Department
of Physics, Durham University, South Road, DH1 3LE Durham, U.K.
| | - Fatima Ibrahim
- University
of Grenoble Alpes, CEA, CNRS, SPINTEC, 38000 Grenoble, France
| | - Mairbek Chshiev
- University
of Grenoble Alpes, CEA, CNRS, SPINTEC, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Alberto Quintana
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, E-08193 Barcelona, Spain
| | - Aitor Lopeandia
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, E-08193 Barcelona, Spain
| | - José L. Costa-Krämer
- IMN-Instituto
de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid, Spain
| | - Enric Menéndez
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
| | - Jordi Sort
- Departament
de Física, Universitat Autònoma
de Barcelona, E-08193 Cerdanyola del Vallès, Spain
- Institució
Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
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13
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Gu F, Zhang L, Li Z, Zhang J, Pan Y, Li Q, Li H, Qin Y, Li Q. A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe 3O 4via ultracapacitor structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:455802. [PMID: 36044895 DOI: 10.1088/1361-648x/ac8e47] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 08/31/2022] [Indexed: 06/15/2023]
Abstract
Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in Fe3O4via a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in Na2SO4, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPF6organic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.
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Affiliation(s)
- Fangchao Gu
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Leqing Zhang
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Zhaohui Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Jie Zhang
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Yuanyuan Pan
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Qinghao Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Hongsen Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Yufeng Qin
- College of Information Science and Engineering, Shandong Agricultural University, Taian, Shandong 271018, People's Republic of China
| | - Qiang Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
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14
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Reversible writing/deleting of magnetic skyrmions through hydrogen adsorption/desorption. Nat Commun 2022; 13:1350. [PMID: 35292656 PMCID: PMC8924161 DOI: 10.1038/s41467-022-28968-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Accepted: 02/17/2022] [Indexed: 11/09/2022] Open
Abstract
Magnetic skyrmions are topologically nontrivial spin textures with envisioned applications in energy-efficient magnetic information storage. Toggling the presence of magnetic skyrmions via writing/deleting processes is essential for spintronics applications, which usually require the application of a magnetic field, a gate voltage or an electric current. Here we demonstrate the reversible field-free writing/deleting of skyrmions at room temperature, via hydrogen chemisorption/desorption on the surface of Ni and Co films. Supported by Monte-Carlo simulations, the skyrmion creation/annihilation is attributed to the hydrogen-induced magnetic anisotropy change on ferromagnetic surfaces. We also demonstrate the role of hydrogen and oxygen on magnetic anisotropy and skyrmion deletion on other magnetic surfaces. Our results open up new possibilities for designing skyrmionic and magneto-ionic devices. To use skyrmions to store information, an effective method for writing and deleting them is required. Here, Chen et al demonstrate the writing and deleting of skyrmions at room temperature by using hydrogen adsorption to change the magnetic anisotropy of the metallic multilayer hosting the skyrmions.
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15
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Martins S, de Rojas J, Tan Z, Cialone M, Lopeandia A, Herrero-Martín J, Costa-Krämer JL, Menéndez E, Sort J. Dynamic electric-field-induced magnetic effects in cobalt oxide thin films: towards magneto-ionic synapses. NANOSCALE 2022; 14:842-852. [PMID: 34985078 DOI: 10.1039/d1nr06210g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Voltage control of magnetism via electric-field-driven ion migration (magneto-ionics) has generated intense interest due to its potential to greatly reduce heat dissipation in a wide range of information technology devices, such as magnetic memories, spintronic systems or artificial neural networks. Among other effects, oxygen ion migration in transition-metal-oxide thin films can lead to the generation or full suppression of controlled amounts of ferromagnetism ('ON-OFF' magnetic transitions) in a non-volatile and fully reversible manner. However, oxygen magneto-ionic rates at room temperature are generally considered too slow for industrial applications. Here, we demonstrate that sub-second ON-OFF transitions in electrolyte-gated paramagnetic cobalt oxide films can be achieved by drastically reducing the film thickness from >200 nm down to 5 nm. Remarkably, cumulative magneto-ionic effects can be generated by applying voltage pulses at frequencies as high as 100 Hz. Neuromorphic-like dynamic effects occur at these frequencies, including potentiation (cumulative magnetization increase), depression (i.e., partial recovery of magnetization with time), threshold activation, and spike time-dependent magnetic plasticity (learning and forgetting capabilities), mimicking many of the biological synapse functions. The systems under investigation show features that could be useful for the design of artificial neural networks whose magnetic properties would be governed with voltage.
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Affiliation(s)
- Sofia Martins
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Julius de Rojas
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Zhengwei Tan
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
- CNR-SPIN Genova, C.so F. M. Perrone 24, Genova, 16152, Italy
| | - Matteo Cialone
- CNR-SPIN Genova, C.so F. M. Perrone 24, Genova, 16152, Italy
| | - Aitor Lopeandia
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, E-08193 Barcelona, Spain
| | | | - José L Costa-Krämer
- IMN-Instituto de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid, Spain
| | - Enric Menéndez
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
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16
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Wang Q, Gu Y, Yin S, Sun Y, Liu W, Zhang Z, Pan F, Song C. Facilitating room-temperature oxygen ion migration via Co-O bond activation in cobaltite films. NANOSCALE 2021; 13:18256-18266. [PMID: 34713881 DOI: 10.1039/d1nr03801j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Oxygen ion migration in strongly correlated oxides can cause dramatic changes in the crystal structure, chemical and magnetoelectric properties, which holds promising for a wide variety of applications in catalysis, energy conversion, and electronics. However, the high strength and stability of metal-oxygen (M-O) bonds cause a large thermodynamic barrier for oxygen migration. Here, we designed Co-O bond activation in cobaltite (SrCoOx) films by Au-nanodot-decoration. Charge transfer from Au to SrCoOx effectively weakens the Co-O bond, meanwhile Co-O-Au synergistic bonding remarkably decreases the migration barrier of oxygen ions. Fast oxygen evolution occurs at the perimeter of the Au/SrCoOx interface, and the chemical potential gradient of O2- drives inner ion diffusion to the surface. Consequently, bias-free topotactic phase reduction from perovskite SrCoO3-δ to brownmillerite SrCoO2.5 has been achieved at room temperature. Our finding explores a new dimension to accelerate oxygen ion kinetics in transition-metal oxides from the aspect of interfacial bond activation, which is significant for developing oxide/noble-metal interfaces for high-efficiency ion migration and redox catalysis at low temperature.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Youdi Gu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Siqi Yin
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Yiming Sun
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Wei Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
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17
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Murray PD, Jensen CJ, Quintana A, Zhang J, Zhang X, Grutter AJ, Kirby BJ, Liu K. Electrically Enhanced Exchange Bias via Solid-State Magneto-ionics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:38916-38922. [PMID: 34347431 DOI: 10.1021/acsami.1c11126] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune the exchange bias in Gd/Ni1-xCoxO thin films (x = 0.50 and 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni1-xCoxO initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. An exchange bias is established after field cooling (FC), which can be enhanced by up to 35% after a voltage conditioning and subsequently reset with a second FC. These effects are caused by the presence of an interfacial ferromagnetic NiCo layer, which further alloys with the Gd layer upon FC and voltage application, as confirmed by electron microscopy and polarized neutron reflectometry studies. These results highlight the viability of the solid-state magneto-ionic approach to achieve electric control of exchange bias, with potential for energy-efficient magneto-ionic devices.
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Affiliation(s)
- Peyton D Murray
- Physics Department, University of California, Davis, California 95616, United States
| | - Christopher J Jensen
- Physics Department, Georgetown University, Washington, District of Columbia 20057, United States
| | - Alberto Quintana
- Physics Department, Georgetown University, Washington, District of Columbia 20057, United States
| | - Junwei Zhang
- King Abdullah University of Science & Technology, Thuwal 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- King Abdullah University of Science & Technology, Thuwal 23955-6900, Saudi Arabia
| | - Alexander J Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Brian J Kirby
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kai Liu
- Physics Department, University of California, Davis, California 95616, United States
- Physics Department, Georgetown University, Washington, District of Columbia 20057, United States
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18
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de Rojas J, Salguero J, Ibrahim F, Chshiev M, Quintana A, Lopeandia A, Liedke MO, Butterling M, Hirschmann E, Wagner A, Abad L, Costa-Krämer JL, Menéndez E, Sort J. Magneto-Ionics in Single-Layer Transition Metal Nitrides. ACS APPLIED MATERIALS & INTERFACES 2021; 13:30826-30834. [PMID: 34156228 PMCID: PMC8483439 DOI: 10.1021/acsami.1c06138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Accepted: 06/09/2021] [Indexed: 06/13/2023]
Abstract
Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. Iron nitrides require increased activation energy and, under high bias, exhibit more modest rates of magneto-ionic motion than cobalt nitrides. Ab initio calculations reveal that, based on the atomic bonding strength, the critical field required to induce nitrogen-ion motion is higher in iron nitrides (≈6.6 V nm-1) than in cobalt nitrides (≈5.3 V nm-1). Nonetheless, under large bias (i.e., well above the magneto-ionic onset and, thus, when magneto-ionics is fully activated), iron nitride films exhibit enhanced coercivity and larger generated saturation magnetization, surpassing many of the features of cobalt nitrides. The microstructural effects responsible for these enhanced magneto-ionic effects are discussed. These results open up the potential integration of magneto-ionics in existing nitride semiconductor materials in view of advanced memory system architectures.
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Affiliation(s)
- Julius de Rojas
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
| | - Joaquín Salguero
- IMN-Instituto
de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, Madrid 28760, Spain
| | - Fatima Ibrahim
- Univwesity
of Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France
| | - Mairbek Chshiev
- Univwesity
of Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France
- Institut
Universitaire de France, Paris 75231, France
| | - Alberto Quintana
- Department
of Physics, Georgetown University, Washington, District of
Columbia 20057, United
States
| | - Aitor Lopeandia
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona E-08193, Spain
| | - Maciej O. Liedke
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Maik Butterling
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Eric Hirschmann
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Andreas Wagner
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden−Rossendorf, Dresden 01328, Germany
| | - Llibertat Abad
- Institut
de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus
UAB, Bellaterra, Barcelona E-08193, Spain
| | - José L. Costa-Krämer
- IMN-Instituto
de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, Madrid 28760, Spain
| | - Enric Menéndez
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
| | - Jordi Sort
- Departament
de Física, Universitat Autònoma
de Barcelona, Cerdanyola
del Vallès E-08193, Spain
- Institució
Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, Barcelona E-08010, Spain
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