High-responsivity graphene photodetectors integrated on silicon microring resonators

Optimal design of graphene-based plasmonic enhanced photodetector using PSO

In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566×10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .

Flexural and acoustic phonon-drag thermopower and electron energy loss rate in silicene

We have performed a comprehensive numerical and analytical examination of two crucial transport aspects in silicene: the phonon-drag thermopower,Sp, and the electron's energy loss rate,Fe. Specifically, our investigation is centered on their responses to out-of-plane flexural phonons and in-plane acoustic phonons in silicene, a two-dimensional allotrope of silicon as a function of electron temperature,T,and electron concentration,n,upto the room temperature. It is found that the calculated quantities have a non-monotonic dependence for the phonon modes for both parameters(T and n)considered while analytical results predict definite dependencies up to the complete low-temperature Bloch-Gruneisen (BG) regime. To provide a more comprehensive picture, we contrast the complete numerical outcomes with the approximated analytical BG results, revealing a convergence within a specific range of temperature and carrier concentration. In light of this convergence, we put forth suggestions to elucidate the underlying factors responsible for this behavior. A comparison based on the magnitude of the calculated quantities can be made from the figures between the two considered phonon modes, which clearly shows that the out-of-plane flexural phonons are effective throughout the considered temperature range. This observation leads us to posit that the dominating contribution of the out-of-plane flexural phonon modes hinges upon the deformation potential constant and phonon energy associated with the phonon mode. Our study carries significant implications for estimating the electrical and thermal properties of silicene and provides valuable insights for the development of devices based on silicene-based technologies.

Nonlinear Optical Properties of 2D Materials and their Applications

2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

High current treated-passivated graphene (CTPG) towards stable nanoelectronic and spintronic circuits

Achieving enhanced and stable electrical quality of scalable graphene is crucial for practical graphene device applications. Accordingly, encapsulation has emerged as an approach for improving electrical transport in graphene. In this study, we demonstrate high-current treatment of graphene passivated by AlOx nanofilms as a new means to enhance the electrical quality of graphene for its scalable utilization. Our experiments and electrical measurements on large-scale chemical vapor-deposited (CVD) graphene devices reveal that high-current treatment causes persistent and irreversible de-trapping density in both bare graphene and graphene covered by AlOx. Strikingly, despite possible interfacial defects in graphene covered with AlOx, the high-current treatment enhances its carrier mobility by up to 200% in contrast to bare graphene samples, where mobility decreases. Spatially resolved Raman spectroscopy mapping confirms that surface passivation by AlOx, followed by the current treatment, reduces the number of sp3 defects in graphene. These results suggest that for current treated-passivated graphene (CTPG), the high-current treatment considerably reduces charged impurity and trapped charge densities, thereby reducing Coulomb scattering while mitigating any electromigration of carbon atoms. Our study unveils CTPG as an innovative system for practical utilization in graphene nanoelectronic and spintronic integrated circuits.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Fast and Uncooled Semiconducting Ca-Doped Y-Ba-Cu-O Thin Film-Based Thermal Sensors for Infrared

YBa2Cu3O6+x (YBCO) cuprates are semiconductive when oxygen depleted (x < 0.5). They can be used for uncooled thermal detection in the near-infrared: (i) low temperature deposition on silicon substrates, leading to an amorphous phase (a-YBCO); (ii) pyroelectric properties exploited in thermal detectors offering both low noise and fast response above 1 MHz. However, a-YBCO films exhibit a small direct current (DC) electrical conductivity, with strong non-linearity of current-voltage plots. Calcium doping is well known for improving the transport properties of oxygen-rich YBCO films (x > 0.7). In this paper, we consider the performances of pyroelectric detectors made from calcium-doped (10 at. %) and undoped a-YBCO films. First, the surface microstructure, composition, and DC electrical properties of a-Y0.9Ca0.1Ba2Cu3O6+x films were investigated; then devices were tested at 850 nm wavelength and results were analyzed with an analytical model. A lower DC conductivity was measured for the calcium-doped material, which exhibited a slightly rougher surface, with copper-rich precipitates. The calcium-doped device exhibited a higher specific detectivity (D*=7.5×107 cm·Hz/W at 100 kHz) than the undoped device. Moreover, a shorter thermal time constant (<8 ns) was inferred as compared to the undoped device and commercially available pyroelectric sensors, thus paving the way to significant improvements for fast infrared imaging applications.

Waveguide-Integrated MoTe2 p-i-n Homojunction Photodetector

Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe₂ p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe₂ channel in p- or n-types. High-quality reconfigurable MoTe₂ (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe₂ absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe₂'s absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 10⁴ and a record-high normalized photocurrent-to-dark-current ratio of 10⁶ mW^-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe₂ promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.

Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity

The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.

High-performance hierarchical O-SnS/I-ZnIn2S4 photodetectors by leveraging the synergy of optical regulation and band tailoring

Low light absorption and limited carrier lifetime are critical obstacles inhibiting further performance improvement of 2D layered material (2DLM) based photodetectors, while scalable fabrication is an ongoing challenge prior to commercialization from the lab to market. Herein, wafer-scale SnS/ZIS hierarchical nanofilms, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been achieved by pulsed-laser deposition. The derived O-SnS/I-ZIS photodetector exhibits markedly boosted sensitivity as compared to a pristine ZIS device. The synergy of multiple functionalities contributes to the dramatic improvement, including the pronounced light-trapping effect of O-SnS by multiple scattering, the high-efficiency spatial separation of photogenerated electron-hole pairs by a type-II staggered band alignment and the promoted carrier transport enabled by the tailored electronic structure of ZIS. Of note, the unique architecture of O-SnS/I-ZIS can considerably expedite the carrier dynamics, where O-SnS promotes the electron transfer from SnS to ZIS whilst the I-ZIS enables high-speed electron circulation. In addition, the interlayer transition enables the bridging of the effective optical window to telecommunication wavelengths. Moreover, monolithic integration of arrayed devices with satisfactory device-to-device variability has been encompassed and a proof-of-concept imaging application is demonstrated. On the whole, this study depicts a fascinating functional coupling architecture toward implementing chip-scale integrated optoelectronics.

Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters

Silicon photonics is evolving from laboratory research to real-world applications with the potential to transform many technologies, including optical neural networks and quantum information processing. A key element for these applications is a reconfigurable switch operating at ultra-low programming energy-a challenging proposition for traditional thermo-optic or free carrier switches. Recent advances in non-volatile programmable silicon photonics based on phase-change materials (PCMs) provide an attractive solution to energy-efficient photonic switches with zero static power, but the programming energy density remains high (hundreds of attojoules per cubic nanometre). Here we demonstrate a non-volatile electrically reconfigurable silicon photonic platform leveraging a monolayer graphene heater with high energy efficiency and endurance. In particular, we show a broadband switch based on the technologically mature PCM Ge₂Sb₂Te₅ and a phase shifter employing the emerging low-loss PCM Sb₂Se₃. The graphene-assisted photonic switches exhibited an endurance of over 1,000 cycles and a programming energy density of 8.7 ± 1.4 aJ nm^-3, that is, within an order of magnitude of the PCM thermodynamic switching energy limit (~1.2 aJ nm^-3) and at least a 20-fold reduction in switching energy compared with the state of the art. Our work shows that graphene is a reliable and energy-efficient heater compatible with dielectric platforms, including Si₃N₄, for technologically relevant non-volatile programmable silicon photonics.

Graphene Metamaterial Embedded within Bundt Optenna for Ultra-Broadband Infrared Enhanced Absorption

Graphene is well-known for its extraordinary physical properties such as broadband optical absorption, high electron mobility, and electrical conductivity. All of these make it an excellent candidate for several infrared applications such as photodetection, optical modulation, and optical sensing. However, a standalone monolayer graphene still suffers from a weak infrared absorption, which is ≅2.3%. In this work, a novel configuration of graphene metamaterial embedded inside Bundt optical-antenna (optenna) is demonstrated. It can leverage the graphene absorption up to 57.7% over an ultra-wide wavelength range from 1.26 to 1.68 µm (i.e., Bandwidth ≅ 420 nm). This range covers the entire optical communication bands of O, E, S, C, L, and U. The configuration mainly consists of a Bundt-shaped plasmonic antenna with a graphene metamaterial stack embedded within its nano-wide waveguide that has a 1.5 µm length. The gold average plasmonic loss is ≅25%. This configuration can enhance graphene ultra-broadband absorption through multiple mechanisms. It can nano-focus the infrared radiation down to a 50 nm spot on the graphene metamaterial, thus yielding an 11.5 gain in optical intensity (i.e., 10.6 dB). The metamaterial itself has seven concentric cylindrical graphene layers separated by silicon dioxide thin films, thus each layer contributes to the overall absorption. The focused infrared propagates tangential to the graphene metamaterial layers (i.e., grazing propagation), and thus maximizes the light–graphene interaction length. In addition, each graphene layer experiences a double-face exposure to the nano-focused propagating spot, which increases each layer’s absorption. This configuration is compact and polarization-insensitive. The estimated maximum absorption enhancement compared to the standalone monolayer graphene was 25.1 times (i.e., ≅4 dB). The estimated maximum absorption coefficient of the graphene stack was 5700 cm⁻¹, which is considered as one of the record-high reported coefficients up to date.

Dynamic and Active THz Graphene Metamaterial Devices

In recent years, terahertz waves have attracted significant attention for their promising applications. Due to a broadband optical response, an ultra-fast relaxation time, a high nonlinear coefficient of graphene, and the flexible and controllable physical characteristics of its meta-structure, graphene metamaterial has been widely explored in interdisciplinary frontier research, especially in the technologically important terahertz (THz) frequency range. Here, graphene’s linear and nonlinear properties and typical applications of graphene metamaterial are reviewed. Specifically, the discussion focuses on applications in optically and electrically actuated terahertz amplitude, phase, and harmonic generation. The review concludes with a brief examination of potential prospects and trends in graphene metamaterial.

Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors

Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs^-1) light detection at low (<pJbit^-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.

On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices

The outstanding performance and facile processability turn two-dimensional materials (2DMs) into the most sought-after class of semiconductors for optoelectronics applications. Yet, significant progress has been made toward the hybrid integration of these materials on silicon photonics (SiPh) platforms for a wide range of mid-infrared (MIR) applications. However, realizing 2D materials with a strong optical response in the NIR-MIR and excellent air stability is still a long-term goal. Here, we report a waveguide integrated photodetector based on a novel 2D GeP. This material uniquely combines narrow and wide tunable bandgap energies (0.51-1.68 eV), offering a broadband operation from visible to MIR spectral range. In a significant advantage over graphene devices, hybrid Si/GeP waveguide photodetectors work under bias with a low dark current of few nano-amps and demonstrate excellent stability and reproducibility. Additionally, 65 nm thick GeP devices integrated on silicon waveguides exhibit a remarkable photoresponsivity of 0.54 A/W and attain high external quantum efficiency of ∼ 51.3% under 1310 nm light and at room temperature. Furthermore, a measured absorption coefficient of 1.54 ± 0.3 dB/µm at 1310 nm suggests the potential of 2D GeP as an alternative infrared material with broad optical tunability and dynamic stability suitable for advanced optoelectronic integration.

Silicon-Based Graphene Electro-Optical Modulators

With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.

Small-Signal Analysis of All-Si Microring Resonator Photodiode

All-silicon microring resonator photodiodes are attractive for silicon photonics integrated circuits due to their compactness, wavelength division multiplexing ability, and the absence of germanium growth. To analyze and evaluate the performance of the microring photodiode, we derived closed-form expression of the response transfer function with both electrical and optical behavior included, using a small-signal analysis. The thermo-optic nonlinearity resulting from optical loss and ohmic heating was simulated and considered in the model. The predicted response achieved close agreement with the experiment results, which provides an intuitive understanding of device performance. We analytically investigated the responsivity–bandwidth product and demonstrated that the performance is superior when the detuning frequency is zero.

Gold Enhanced Graphene-Based Photodetector on Optical Fiber with Ultrasensitivity over Near-Infrared Bands

Graphene has been widely used in photodetectors; however its photoresponsivity is limited due to the intrinsic low absorption of graphene. To enhance the graphene absorption, a waveguide structure with an extended interaction length and plasmonic resonance with light field enhancement are often employed. However, the operation bandwidth is narrowed when this happens. Here, a novel graphene-based all-fiber photodetector (AFPD) was demonstrated with ultrahigh responsivity over a full near-infrared band. The AFPD benefits from the gold-enhanced absorption when an interdigitated Au electrode is fabricated onto a Graphene-PMMA film covered over a side-polished fiber (SFP). Interestingly, the AFPD shows a photoresponsivity of >1 × 10⁴ A/W and an external quantum efficiency of >4.6 × 10⁶% over a broadband region of 980–1620 nm. The proposed device provides a simple, low-cost, efficient, and robust way to detect optical fiber signals with intriguing capabilities in terms of distributed photodetection and on-line power monitoring, which is highly desirable for a fiber-optic communication system.

Graphene on Silicon Photonics: Light Modulation and Detection for Cutting-Edge Communication Technologies

Graphene—a two-dimensional allotrope of carbon in a single-layer honeycomb lattice nanostructure—has several distinctive optoelectronic properties that are highly desirable in advanced optical communication systems. Meanwhile, silicon photonics is a promising solution for the next-generation integrated photonics, owing to its low cost, low propagation loss and compatibility with CMOS fabrication processes. Unfortunately, silicon’s photodetection responsivity and operation bandwidth are intrinsically limited by its material characteristics. Graphene, with its extraordinary optoelectronic properties has been widely applied in silicon photonics to break this performance bottleneck, with significant progress reported. In this review, we focus on the application of graphene in high-performance silicon photonic devices, including modulators and photodetectors. Moreover, we explore the trend of development and discuss the future challenges of silicon-graphene hybrid photonic devices.

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits

Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi₂O₂Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi₂O₂Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi₂O₂Se on top of a silicon waveguide. We demonstrated the Bi₂O₂Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W^-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz^-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi₂O₂Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.

High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.