1
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Zhao P, Wang X, Tong Y, Zhao X, Tang Q, Liu Y. Transfer-Printing of Insoluble Conducting Polymer for Soft 3D Conformal All-Organic Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309263. [PMID: 38321840 DOI: 10.1002/smll.202309263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 01/23/2024] [Indexed: 02/08/2024]
Abstract
The development of high-precision insoluble conducting polymer patterns for soft electronics is extremely challenging, mainly because of the incompatibility of the synthesis process with the underlying layers. In this study, a novel transfer-printing method is designed that enables the fabrication of photolithographic insoluble conducting polypyrrole (PPy) electrode patterns on soft substrates with high precision, demonstrating compatibility with various soft organic functional layers. Excellent mechanical stability, good biocompatibility, ultra-smooth surface, and outstanding conformability are observed. The photolithographic PPy electrode patterns, combined with an elastic organic semiconductor and dielectric, produce conformal all-organic transistors with mobility of 1.8 cm2 V-1 s-1. This study paves the way to use insoluble conducting polymers to develop complex, high-density flexible patterns and offers a promising organic electrode for the new-generation soft all-organic electronics.
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Affiliation(s)
- Pengfei Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Xue Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, China
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2
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Zhao S, Zhao Y, Li C, Wang W, Liu HY, Cui L, Li X, Yang Z, Zhang A, Wang Y, Lin Y, Hao T, Yin J, Kang J, Zhu J. Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305479. [PMID: 37705254 DOI: 10.1002/adma.202305479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 09/09/2023] [Indexed: 09/15/2023]
Abstract
On-skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer-scale processability. Here, self-delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin-like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrated, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high-quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single-walled carbon nanotube field-effect transistors (FETs) with a merely 160-nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105 , mobilities of 39.9 ± 2.2 cm2 V-1 s-1 , and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance.
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Affiliation(s)
- Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yingtao Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Chenning Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Hai-Yang Liu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Lei Cui
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Xiang Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Zhenhua Yang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Anni Zhang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yurou Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yuxuan Lin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Tailang Hao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
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3
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Perinot A, Scuratti F, Scaccabarozzi AD, Tran K, Salazar-Rios JM, Loi MA, Salvatore G, Fabiano S, Caironi M. Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56095-56105. [PMID: 37990398 DOI: 10.1021/acsami.3c11285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.
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Affiliation(s)
- Andrea Perinot
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Francesca Scuratti
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Alberto D Scaccabarozzi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Karolina Tran
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Jorge Mario Salazar-Rios
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Giovanni Salvatore
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, Via Torino, 155─Alfa Building, 30172 Mestre Venice, Italy
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, 60 174 Norrköping, Sweden
| | - Mario Caironi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
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4
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Zambra M, Abbinante VM, García-Espejo G, Konidaris KF, Anzini P, Pipitone C, Giannici F, Scagliotti M, Rapisarda M, Mariucci L, Milita S, Guagliardi A, Masciocchi N. Polyfluorinated Naphthalene-bis-hydrazimide for Solution-Grown n-Type Semiconducting Films. ACS OMEGA 2023; 8:43651-43663. [PMID: 38027374 PMCID: PMC10666217 DOI: 10.1021/acsomega.3c05172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 09/11/2023] [Indexed: 12/01/2023]
Abstract
Naphthalene tetracarboxylic diimides (NDIs), possessing low-lying and tunable LUMO levels, are of wide interest for their aptitude to provide cost-effective, flexible, and environmentally stable n-type organic semiconductors through simple solution processing. NDI-based aromatic hydrazidimides are herein studied in relation to their chemical and environmental stability and as spin-coated stable thin films. In the case of the pentafluorinated residue, these were found to be crystalline, highly oriented, and molecularly flat (roughness = 0.3 nm), based on optical and atomic force microscopy, X-ray diffraction in specular and grazing incidence geometry, and X-ray reflectivity measurements. A new polymorph, previously undetected during the isolation of bulk powders or in their controlled thermal treatments, is found in the thin film and was metrically and structurally characterized from 2D GIWAXS patterns (monoclinic, P2/c, a = 17.50; b = 4.56; c = 14.24 Å; β = 84.8°). This new thin-film phase, TF-F5, is formed no matter whether silicon, glass, or polymethylmethacrylate substrates are used, thus opening the way to the preparation of solution-grown flexible semiconducting films. The TF-F5 films exhibit a systematic and rigorous molecular alignment with both orientation and packing favorable to electron mobility (μ = 0.02 cm2 V-1 s-1). Structural and morphological differences are deemed responsible for the absence of measurable conductivity in thin films of polyfluorinated analogues bearing -CF3 residues on the hydrazidimide aromatic rings.
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Affiliation(s)
- Marco Zambra
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
| | - Vincenzo Mirco Abbinante
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
| | - Gonzalo García-Espejo
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
| | - Konstantis F. Konidaris
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
| | - Pietro Anzini
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
| | - Candida Pipitone
- Dipartimento
di Fisica e Chimica “Emilio Segrè”, Università di Palermo, viale delle Scienze, 90128 Palermo, Italy
| | - Francesco Giannici
- Dipartimento
di Fisica e Chimica “Emilio Segrè”, Università di Palermo, viale delle Scienze, 90128 Palermo, Italy
| | - Mattia Scagliotti
- Istituto
per la Microelettronica e Microsistemi - Consiglio Nazionale delle
Ricerche, via del Fosso
del Cavaliere 100, 00133 Roma, Italy
| | - Matteo Rapisarda
- Istituto
per la Microelettronica e Microsistemi - Consiglio Nazionale delle
Ricerche, via del Fosso
del Cavaliere 100, 00133 Roma, Italy
| | - Luigi Mariucci
- Istituto
per la Microelettronica e Microsistemi - Consiglio Nazionale delle
Ricerche, via del Fosso
del Cavaliere 100, 00133 Roma, Italy
| | - Silvia Milita
- Istituto
per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, via Gobetti 101, 40129 Bologna, Italy
| | - Antonietta Guagliardi
- Istituto
di Cristallografia and To.Sca.Lab, Consiglio
Nazionale delle Ricerche, via Valleggio 11, 22100 Como, Italy
| | - Norberto Masciocchi
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria and INSTM, via Valleggio 11, 22100 Como, Italy
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5
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Jiang T, Wang Y, Huang W, Ling H, Tian G, Deng Y, Geng Y, Ji D, Hu W. Retina-inspired organic neuromorphic vision sensor with polarity modulation for decoding light information. LIGHT, SCIENCE & APPLICATIONS 2023; 12:264. [PMID: 37932276 PMCID: PMC10628194 DOI: 10.1038/s41377-023-01310-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 10/07/2023] [Accepted: 10/16/2023] [Indexed: 11/08/2023]
Abstract
The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. However, the mechanism of modulating charge transport on basis of PFGs in devices is unclear. Here, the carboxyl group is introduced into polymer dielectrics in this study, and it can induce the charge transfer process at the semiconductor/dielectric interfaces for effective carrier transport, giving rise to the best device mobility up to 20 cm2 V-1 s-1 at a low operating voltage of -1 V. Furthermore, the polarity modulation effect could further increase the optical figures of merit in NeuVS devices by at least an order of magnitude more than the devices using carboxyl group-free polymer dielectrics. Additionally, devices containing carboxyl groups improved image sensing for light information decoding with 52 grayscale signals and memory capabilities at an incredibly low power consumption of 1.25 fJ/spike. Our findings provide insight into the production of high-performance polymer dielectrics for NeuVS devices.
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Affiliation(s)
- Ting Jiang
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072, Tianjin, China
- Haihe Laboratory of Sustainable Chemical Transformations, 300192, Tianjin, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, 210023, Nanjing, China
| | - Wanxin Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, 210023, Nanjing, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, 210023, Nanjing, China
| | - Guofeng Tian
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, 100029, Beijing, China
| | - Yunfeng Deng
- School of Materials Science and Engineering, Tianjin University, 300072, Tianjin, China
| | - Yanhou Geng
- School of Materials Science and Engineering, Tianjin University, 300072, Tianjin, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072, Tianjin, China.
- Haihe Laboratory of Sustainable Chemical Transformations, 300192, Tianjin, China.
| | - Wenping Hu
- Haihe Laboratory of Sustainable Chemical Transformations, 300192, Tianjin, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, 300072, Tianjin, China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, 300072, Tianjin, China
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6
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Carlotti M, Losi T, De Boni F, Vivaldi FM, Araya-Hermosilla E, Prato M, Pucci A, Caironi M, Mattoli V. Preparation of different conjugated polymers characterized by complementary electronic properties from an identical precursor. Polym Chem 2023; 14:4465-4473. [PMID: 38013925 PMCID: PMC10548785 DOI: 10.1039/d3py00868a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 09/01/2023] [Indexed: 11/29/2023]
Abstract
The possibility of generating regions with different electronic properties within the same organic semiconductor thin film could offer novel opportunities for designing and fabricating organic electronic devices and circuits. This study introduces a new approach based on a novel type of highly processable polymer precursor that can yield two different conjugated polymers characterized by complementary electronic properties, i.e. promoting electron or hole transport, from the same starting material. In particular, these multipotent precursors comprise functionalized dihydroanthracene units that can offer several functionalization opportunities to improve the solubility or insert specific functionalities. This strategy also allows for the preparation of high-molecular-weight conjugated polymers comprising diethynylanthracene and anthraquinone units without the need for solubilizing side chains. Thin films of the polymer precursor can be used, after solid-state transformations, to prepare single organic layers comprising regions characterized by different chemical nature and electronic properties. Here, we present a detailed characterization of the chemical and electronic properties of the precursor and the obtained conjugated polymers, showing how it is possible to harvest their characteristics for potential applications such as electrochromic surfaces and organic field-effect transistors.
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Affiliation(s)
- Marco Carlotti
- Dipartimento di Chimica e Chimica Industriale, University of Pisa Via G. Moruzzi 13 56124 Pisa Italy
- Center for Materials Interfaces, Istituto Italiano di Tecnologia Viale Rinaldo Piaggio 34 56025 Pontedera Italy
- Centro per la Integrazione Della Strumentazione Dell'Università di Pisa (CISUP), University of Pisa Lungarno Pacinotti 43/44 56126 Pisa Italy
| | - Tommaso Losi
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via R. Rubattino 81 20134 Milano Italy
| | - Francesco De Boni
- Materials Characterization Facility, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - Federico Maria Vivaldi
- Dipartimento di Chimica e Chimica Industriale, University of Pisa Via G. Moruzzi 13 56124 Pisa Italy
| | - Esteban Araya-Hermosilla
- Center for Materials Interfaces, Istituto Italiano di Tecnologia Viale Rinaldo Piaggio 34 56025 Pontedera Italy
| | - Mirko Prato
- Materials Characterization Facility, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - Andrea Pucci
- Dipartimento di Chimica e Chimica Industriale, University of Pisa Via G. Moruzzi 13 56124 Pisa Italy
- Centro per la Integrazione Della Strumentazione Dell'Università di Pisa (CISUP), University of Pisa Lungarno Pacinotti 43/44 56126 Pisa Italy
| | - Mario Caironi
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via R. Rubattino 81 20134 Milano Italy
| | - Virgilio Mattoli
- Center for Materials Interfaces, Istituto Italiano di Tecnologia Viale Rinaldo Piaggio 34 56025 Pontedera Italy
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7
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Hu X, Wu M, Che L, Huang J, Li H, Liu Z, Li M, Ye D, Yang Z, Wang X, Xie Z, Liu J. Nanoengineering Ultrathin Flexible Pressure Sensor with Superior Sensitivity and Perfect Conformability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2208015. [PMID: 37026672 DOI: 10.1002/smll.202208015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 03/15/2023] [Indexed: 06/19/2023]
Abstract
Flexible pressure sensors play an increasingly important role in a wide range of applications such as human health monitoring, soft robotics, and human-machine interfaces. To achieve a high sensitivity, a conventional approach is introducing microstructures to engineer the internal geometry of the sensor. However, this microengineering strategy requires the sensor's thickness to be typically at hundreds to thousands of microns level, impairing the sensor's conformability on surfaces with microscale roughness like human skin. In this manuscript, a nanoengineering strategy is pioneered that paves a path to resolve the conflicts between sensitivity and conformability. A dual-sacrificial-layer method is initiated that facilitates ease of fabrication and precise assembly of two functional nanomembranes to manufacture the thinnest resistive pressure sensor with a total thickness of ≈850 nm that achieves perfectly conformable contact to human skin. For the first time, the superior deformability of the nanothin electrode layer on a carbon nanotube conductive layer is utilized by the authors to achieve a superior sensitivity (92.11 kPa-1 ) and an ultralow detection limit (<0.8 Pa). This work offers a new strategy that is able to overcome a key bottleneck for current pressure sensors, therefore is of potential to inspire the research community for a new wave of breakthroughs.
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Affiliation(s)
- Xiaoguang Hu
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Mengxi Wu
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Lixuan Che
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
| | - Jian Huang
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Haoran Li
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Zehan Liu
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Ming Li
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
| | - Dong Ye
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhuoqing Yang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xuewen Wang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhaoqian Xie
- Department of Engineering Mechanics, Dalian University of Technology, Dalian, 116024, China
| | - Junshan Liu
- State Key Laboratory of High-Performance Precision Manufacturing, Dalian University of Technology, Dalian, 116024, China
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
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8
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Wang W, Jiang Y, Zhong D, Zhang Z, Choudhury S, Lai JC, Gong H, Niu S, Yan X, Zheng Y, Shih CC, Ning R, Lin Q, Li D, Kim YH, Kim J, Wang YX, Zhao C, Xu C, Ji X, Nishio Y, Lyu H, Tok JBH, Bao Z. Neuromorphic sensorimotor loop embodied by monolithically integrated, low-voltage, soft e-skin. Science 2023; 380:735-742. [PMID: 37200416 DOI: 10.1126/science.ade0086] [Citation(s) in RCA: 78] [Impact Index Per Article: 78.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 03/31/2023] [Indexed: 05/20/2023]
Abstract
Artificial skin that simultaneously mimics sensory feedback and mechanical properties of natural skin holds substantial promise for next-generation robotic and medical devices. However, achieving such a biomimetic system that can seamlessly integrate with the human body remains a challenge. Through rational design and engineering of material properties, device structures, and system architectures, we realized a monolithic soft prosthetic electronic skin (e-skin). It is capable of multimodal perception, neuromorphic pulse-train signal generation, and closed-loop actuation. With a trilayer, high-permittivity elastomeric dielectric, we achieved a low subthreshold swing comparable to that of polycrystalline silicon transistors, a low operation voltage, low power consumption, and medium-scale circuit integration complexity for stretchable organic devices. Our e-skin mimics the biological sensorimotor loop, whereby a solid-state synaptic transistor elicits stronger actuation when a stimulus of increasing pressure is applied.
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Affiliation(s)
- Weichen Wang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Yuanwen Jiang
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Donglai Zhong
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Zhitao Zhang
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Snehashis Choudhury
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Jian-Cheng Lai
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Huaxin Gong
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Simiao Niu
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Xuzhou Yan
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Yu Zheng
- Department of Chemistry, Stanford University, Stanford, CA 94305, USA
| | - Chien-Chung Shih
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Rui Ning
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
| | - Qing Lin
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Deling Li
- Department of Radiology, Molecular Imaging Program at Stanford (MIPS), Stanford University, Stanford, CA 94305, USA
- Department of Neurosurgery, Beijing Tiantan Hospital, Beijing Neurosurgical Institute, Capital Medical University, Beijing 100070, China
| | - Yun-Hi Kim
- Department of Chemistry and RINS, Gyeongsang National University, Jinju 660-701, South Korea
| | - Jingwan Kim
- Department of Chemistry and RINS, Gyeongsang National University, Jinju 660-701, South Korea
| | - Yi-Xuan Wang
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Chuanzhen Zhao
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Chengyi Xu
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Xiaozhou Ji
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Yuya Nishio
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Hao Lyu
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Jeffrey B-H Tok
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
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9
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Ricci S, Buonomo M, Casalini S, Bonacchi S, Meneghetti M, Litti L. High performance multi-purpose nanostructured thin films by inkjet printing: Au micro-electrodes and SERS substrates. NANOSCALE ADVANCES 2023; 5:1970-1977. [PMID: 36998657 PMCID: PMC10044483 DOI: 10.1039/d2na00917j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/16/2023] [Indexed: 06/19/2023]
Abstract
Nanostructured thin metal films are exploited in a wide range of applications, spanning from electrical to optical transducers and sensors. Inkjet printing has become a compliant technique for sustainable, solution-processed, and cost-effective thin films fabrication. Inspired by the principles of green chemistry, here we show two novel formulations of Au nanoparticle-based inks for manufacturing nanostructured and conductive thin films by using inkjet printing. This approach showed the feasibility to minimize the use of two limiting factors, namely stabilizers and sintering. The extensive morphological and structural characterization provides pieces of evidence about how the nanotextures lead to high electrical and optical performances. Our conductive films (sheet resistance equal to 10.8 ± 4.1 Ω per square) are a few hundred nanometres thick and feature remarkable optical properties in terms of SERS activity with enhancement factors as high as 107 averaged on the mm2 scale. Our proof-of-concept succeeded in simultaneously combining electrochemistry and SERS by means of real-time tracking of the specific signal of mercaptobenzoic acid cast on our nanostructured electrode.
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Affiliation(s)
- Simona Ricci
- Department of Chemical Sciences, University of Padova Via Marzolo, 1, 35131 Padova Italy +39-049-8275530
| | - Marco Buonomo
- Department of Informatic Engineering, University of Padova Via Gradenigo 6/b 35131 Padova Italy
| | - Stefano Casalini
- Department of Chemical Sciences, University of Padova Via Marzolo, 1, 35131 Padova Italy +39-049-8275530
| | - Sara Bonacchi
- Department of Chemical Sciences, University of Padova Via Marzolo, 1, 35131 Padova Italy +39-049-8275530
| | - Moreno Meneghetti
- Department of Chemical Sciences, University of Padova Via Marzolo, 1, 35131 Padova Italy +39-049-8275530
| | - Lucio Litti
- Department of Chemical Sciences, University of Padova Via Marzolo, 1, 35131 Padova Italy +39-049-8275530
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10
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Song Y, Tang W, Han L, Liu Y, Shen C, Yin X, Ouyang B, Su Y, Guo X. Integration of nanomaterial sensing layers on printable organic field effect transistors for highly sensitive and stable biochemical signal conversion. NANOSCALE 2023; 15:5537-5559. [PMID: 36880412 DOI: 10.1039/d2nr05863d] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Organic field effect transistor (OFET) devices are one of the most popular candidates for the development of biochemical sensors due to their merits of being flexible and highly customizable for low-cost large-area manufacturing. This review describes the key points in constructing an extended-gate type OFET (EGOFET) biochemical sensor with high sensitivity and stability. The structure and working mechanism of OFET biochemical sensors are described firstly, emphasizing the importance of critical material and device engineering to higher biochemical sensing capabilities. Next, printable materials used to construct sensing electrodes (SEs) with high sensitivity and stability are presented with a focus on novel nanomaterials. Then, methods of obtaining printable OFET devices with steep subthreshold swing (SS) for high transconductance efficiency are introduced. Finally, approaches for the integration of OFETs and SEs to form portable biochemical sensor chips are introduced, followed by several demonstrations of sensory systems. This review will provide guidelines for optimizing the design and manufacturing of OFET biochemical sensors and accelerating the movement of OFET biochemical sensors from the laboratory to the marketplace.
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Affiliation(s)
- Yawen Song
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Wei Tang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Lei Han
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Yan Liu
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Chaochao Shen
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Xiaokuan Yin
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Bang Ouyang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Yuezeng Su
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
| | - Xiaojun Guo
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
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11
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Lee H, Kim YE, Bae J, Jung S, Sporea RA, Kim CH. High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide-Diketopyrrolopyrrole Polymer Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10918-10925. [PMID: 36799771 DOI: 10.1021/acsami.2c22350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Source-gated transistors are a new driver of low-power high-gain thin-film electronics. However, source-gated transistors based on organic semiconductors are not widely investigated yet despite their potential for future display and sensor technologies. We report on the fabrication and modeling of high-performance organic source-gated transistors utilizing a critical junction formed between indium-tin oxide and diketopyrrolopyrrole polymer. This partially blocked hole-injection interface is shown to offer both a sufficient level of drain currents and a strong depletion effect necessary for source pinch-off. As a result, our transistors exhibit a set of outstanding metrics, including an intrinsic gain of 160 V/V, an output resistance of 4.6 GΩ, and a saturation coefficient of 0.2 at an operating voltage of 5 V. Drift-diffusion simulation is employed to reproduce and rationalize the experimental data. The modeling reveals that the effective contact length is significantly reduced in an interdigitated electrode geometry, eventually contributing to the realization of low-voltage saturation.
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Affiliation(s)
- Hyuna Lee
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeo Eun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Jisuk Bae
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sungyeop Jung
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
| | - Radu A Sporea
- Advanced Technology Institute, School of Computer Science and Electronic Engineering, University of Surrey, Guildford GU2 7XH, Surrey, U.K
| | - Chang-Hyun Kim
- School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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12
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Kim CH, Azimi M, Fan J, Nagarajan H, Wang M, Cicoira F. All-printed and stretchable organic electrochemical transistors using a hydrogel electrolyte. NANOSCALE 2023; 15:3263-3272. [PMID: 36722914 DOI: 10.1039/d2nr06731e] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Stretchable electronic devices are expected to play an important role in wearable electronics. Solution-processable conducting materials are desirable because of their versatile processing. Herein, we report the fabrication of fully stretchable organic electrochemical transistors (OECTs) by printing all components of the device. To achieve the stretchability of the whole body of the devices, a printed planar gate electrode and polyvinyl alcohol (PVA) hydrogel electrolyte were employed. Stretchable silver paste provided a soft feature to drain/source, gate and interconnect, without any additional strategies needed to improve the stretchability of the metallic components. The resulting OECTs showed a performance comparable to inkjet or screen-printed OECTs. The maximum transconductance and on/off ratio were 1.04 ± 0.13 mS and 830, respectively. The device was stable for 50 days and stretched up to 110% tensile strain, which makes it suitable for withstanding the mechanical deformation expected in wearable electronics. This work paves the way for all-printed and stretchable transistors in wearable bioelectronics.
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Affiliation(s)
- Chi-Hyeong Kim
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Mona Azimi
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Jiaxin Fan
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Harini Nagarajan
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Meijing Wang
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Fabio Cicoira
- Department of Chemical Engineering, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
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13
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Hamadani BH. 2.11 - Accurate characterization of indoor photovoltaic performance. JPHYS MATERIALS 2023; 6:10.1088/2515-7639/acc550. [PMID: 37965623 PMCID: PMC10644663 DOI: 10.1088/2515-7639/acc550] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
Abstract
Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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14
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Chen Y, Wang H, Luo F, Montes-García V, Liu Z, Samorì P. Nanofloating gate modulated synaptic organic light-emitting transistors for reconfigurable displays. SCIENCE ADVANCES 2022; 8:eabq4824. [PMID: 36103533 PMCID: PMC9473570 DOI: 10.1126/sciadv.abq4824] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 07/28/2022] [Indexed: 06/15/2023]
Abstract
The use of postsynaptic current to drive long-lasting luminescence holds a disruptive potential for harnessing the next-generation of smart displays. Multiresponsive long afterglow emission can be achieved by integrating light-emitting polymers in electric spiked transistors trigged by distinct presynaptic signals inputs. Here, we report a highly effective electric spiked long afterglow organic light-emitting transistor (LAOLET), whose operation relies on a nanofloating gate architecture. Long afterglow emission with reconfigurable brightness and retention time is observed upon applying specific positive gate voltage spiked. Conversely, when negative gate voltage stimulus is applied, these LAOLETs function as click-on display. Interestingly, upon endowing the device with force sensing capabilities, it can operate as a long afterglow pressure sensor that emits long-lasting green light subsequently to a controlled extrusion action.
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15
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Lei Y, Zheng Z, Vasquez L, Zhao J, Ma J, Ma H. Enhanced Electron Transfer and Spin Flip through Spin-Orbital Couplings in Organic/Inorganic Heterojunctions: A Nonadiabatic Surface Hopping Simulation. J Phys Chem Lett 2022; 13:4840-4848. [PMID: 35616399 DOI: 10.1021/acs.jpclett.2c01177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The circumstances of transferred electrons across organic/inorganic interfaces have attracted intensive interest because of the distinctive electronic structure properties of those two components. Leveraging ab initio nonadiabatic molecular dynamics methods in conjunction with spin dynamics induced by spin-orbital couplings (SOCs), this study reports two competitive channels during photoinduced dynamical processes in the prototypical ZnPc/monolayer MoS2 heterojunction. Interestingly, the electron-transfer and relaxation processes occur simultaneously because of the enhancement of electron-phonon couplings and expansion of dynamical pathways by SOCs, suggesting that the electron-transfer rate and relaxation processes can be tuned by SOCs, hence yielding the performance promotion of photovoltaic and photocatalytic devices. Additionally, approximately half of the transferred electrons flip their spin within 1.6 ps because of strong SOCs in MoS2, achieving great agreement with experimental measurements. This investigation provides instructive perspectives for designing novel devices and applications based on organic/inorganic heterojunctions, demonstrating the importance of spin dynamics simulations in exploring sophisticated photoinduced processes in materials.
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Affiliation(s)
- Yuli Lei
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Zhenfa Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Luis Vasquez
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Jin Zhao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Haibo Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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