1
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Gao X, Vaidya S, Dikshit S, Ju P, Shen K, Jin Y, Zhang S, Li T. Nanotube spin defects for omnidirectional magnetic field sensing. Nat Commun 2024; 15:7697. [PMID: 39227570 PMCID: PMC11372065 DOI: 10.1038/s41467-024-51941-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 08/22/2024] [Indexed: 09/05/2024] Open
Abstract
Optically addressable spin defects in three-dimensional (3D) crystals and two-dimensional (2D) van der Waals (vdW) materials are revolutionizing nanoscale quantum sensing. Spin defects in one-dimensional (1D) vdW nanotubes will provide unique opportunities due to their small sizes in two dimensions and absence of dangling bonds on side walls. However, optically detected magnetic resonance of localized spin defects in a nanotube has not been observed. Here, we report the observation of single spin color centers in boron nitride nanotubes (BNNTs) at room temperature. Our findings suggest that these BNNT spin defects possess a spin S = 1/2 ground state without an intrinsic quantization axis, leading to orientation-independent magnetic field sensing. We harness this unique feature to observe anisotropic magnetization of a 2D magnet in magnetic fields along orthogonal directions, a challenge for conventional spin S = 1 defects such as diamond nitrogen-vacancy centers. Additionally, we develop a method to deterministically transfer a BNNT onto a cantilever and use it to demonstrate scanning probe magnetometry. Further refinement of our approach will enable atomic scale quantum sensing of magnetic fields in any direction.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Sumukh Vaidya
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Saakshi Dikshit
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Yuanbin Jin
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Shixiong Zhang
- Department of Physics, Indiana University, Bloomington, IN, 47405, USA
- Quantum Science and Engineering Center, Indiana University, Bloomington, IN, 47405, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA.
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA.
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2
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Cobarrubia A, Schottle N, Suliman D, Gomez-Barron S, Patino CR, Kiefer B, Behura SK. Hexagonal Boron Nitride Quantum Simulator: Prelude to Spin and Photonic Qubits. ACS NANO 2024; 18:22609-22619. [PMID: 39138124 PMCID: PMC11363136 DOI: 10.1021/acsnano.4c04240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 07/26/2024] [Accepted: 07/30/2024] [Indexed: 08/15/2024]
Abstract
The quest for qubit operation at room temperature is accelerating the field of quantum information science and technology. Solid state quantum defects with spin-optical properties are promising spin- and photonic qubit candidates for room temperature operations. In this regard, a single boron vacancy within hexagonal boron nitride (h-BN) lattice such as VB- defect has coherent quantum interfaces for spin and photonic qubits owing to the large band gap of h-BN (6 eV) that can shield a computational subspace from environmental noise. However, for a VB- defect in h-BN to be a potential quantum simulator, the design and characterization of the Hamiltonian involving mutual interactions of the defect and other degrees of freedom are needed to fully understand the effect of defects on the computational subspace. Here, we studied the key coupling tensors such as zero-field splitting, Zeeman effect, and hyperfine splitting in order to build the Hamiltonian of the VB- defect. These eigenstates are spin triplet states that form a computational subspace. To study the phonon-assisted single photon emission in the VB- defect, the Hamiltonian is characterized by electron-phonon interaction with Jahn-Teller distortions. A theoretical demonstration of how the VB- Hamiltonian is utilized to relate these quantum properties to spin- and photonic-quantum information processing. For selecting promising host 2D materials for spin and photonic qubits, we present a data-mining perspective based on the proposed Hamiltonian engineering of the VB- defect in which h-BN is one of four materials chosen to be room temperature qubit candidates.
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Affiliation(s)
- Antonio Cobarrubia
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
- Computational
Science Research Center, San Diego State
University, San Diego, California 92182, United States
| | - Nicholas Schottle
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
| | - Dilon Suliman
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
| | - Sebastian Gomez-Barron
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
| | - Christopher R. Patino
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
| | - Boris Kiefer
- Department
of Physics, New Mexico State University, Las Cruces, New Mexico 88003, United States
| | - Sanjay K. Behura
- Department
of Physics, San Diego State University, San Diego, California 92182, United States
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3
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Scholten SC, Singh P, Healey AJ, Robertson IO, Haim G, Tan C, Broadway DA, Wang L, Abe H, Ohshima T, Kianinia M, Reineck P, Aharonovich I, Tetienne JP. Multi-species optically addressable spin defects in a van der Waals material. Nat Commun 2024; 15:6727. [PMID: 39112477 PMCID: PMC11306348 DOI: 10.1038/s41467-024-51129-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2024] [Accepted: 07/29/2024] [Indexed: 08/10/2024] Open
Abstract
Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utilise various spin species in a single material. Here we demonstrate an interplay between two separate spin species within a single hBN crystal, namely S = 1 boron vacancy defects and carbon-related electron spins. We reveal the S = 1/2 character of the carbon-related defect and further demonstrate room temperature coherent control and optical readout of both S = 1 and S = 1/2 spin species. By tuning the two spin ensembles into resonance with each other, we observe cross-relaxation indicating strong inter-species dipolar coupling. We then demonstrate magnetic imaging using the S = 1/2 defects and leverage their lack of intrinsic quantization axis to probe the magnetic anisotropy of a test sample. Our results establish hBN as a versatile platform for quantum technologies in a van der Waals host at room temperature.
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Affiliation(s)
- Sam C Scholten
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Priya Singh
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | | | | | - Galya Haim
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Department of Applied Physics, The Hebrew University of Jerusalem, Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Cheng Tan
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - David A Broadway
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Lan Wang
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
- Low Dimensional Magnetism and Spintronic Devices Lab, School of Physics, Hefei University of Technology, 230009, Hefei, Anhui, China
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
- Department of Materials Science, Tohoku University, 6-6-02 Aramaki-Aza, Aoba-ku, Sendai 980-8579, Japan
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Philipp Reineck
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, NSW 2007, Australia.
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4
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Islam MS, Chowdhury RK, Barthelemy M, Moczko L, Hebraud P, Berciaud S, Barsella A, Fras F. Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology. ACS NANO 2024. [PMID: 39083640 DOI: 10.1021/acsnano.3c10403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.
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Affiliation(s)
- Md Samiul Islam
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Rup Kumar Chowdhury
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Marie Barthelemy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Loic Moczko
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Pascal Hebraud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Stephane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Alberto Barsella
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Francois Fras
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
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5
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Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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6
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Janzen E, Schutte H, Plo J, Rousseau A, Michel T, Desrat W, Valvin P, Jacques V, Cassabois G, Gil B, Edgar JH. Boron and Nitrogen Isotope Effects on Hexagonal Boron Nitride Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306033. [PMID: 37705372 DOI: 10.1002/adma.202306033] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 08/22/2023] [Indexed: 09/15/2023]
Abstract
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising 2D material for electronic, optoelectronic, nanophotonic, and quantum devices. Here, the changes in hBN's properties induced by isotopic purification in both boron and nitrogen are reported. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (≈20 at% 10 B, 80 at% 11 B) while using naturally abundant nitrogen (99.6 at% 14 N, 0.4 at% 15 N), that is, almost pure 14 N. In this study, the class of isotopically purified hBN crystals to 15 N is extended. Crystals in the four configurations, namely h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N, are grown by the metal flux method using boron and nitrogen single isotope (> 99%) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the 15 N-purified crystals at the state-of-the-art of currently available 14 N-purified hBN. The growth of high-quality h10 B14 N, h11 B14 N, h10 B15 N, and h11 B15 N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies.
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Affiliation(s)
- Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, 1701A Platt St., Manhattan, KS, 66506-5102, USA
| | - Hannah Schutte
- Tim Taylor Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, 1701A Platt St., Manhattan, KS, 66506-5102, USA
| | - Juliette Plo
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Adrien Rousseau
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Thierry Michel
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Wilfried Desrat
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Pierre Valvin
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Vincent Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Guillaume Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - Bernard Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, 34095, France
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, 1005 Durland Hall, 1701A Platt St., Manhattan, KS, 66506-5102, USA
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7
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Clua-Provost T, Durand A, Mu Z, Rastoin T, Fraunié J, Janzen E, Schutte H, Edgar JH, Seine G, Claverie A, Marie X, Robert C, Gil B, Cassabois G, Jacques V. Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:126901. [PMID: 37802939 DOI: 10.1103/physrevlett.131.126901] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 08/26/2023] [Indexed: 10/08/2023]
Abstract
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V_{B}^{-}) centers hosted in isotopically engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with ^{15}N yields a simplified and well-resolved hyperfine structure of V_{B}^{-} centers, while purification with ^{10}B leads to narrower ESR linewidths. These results establish isotopically purified h^{10}B^{15}N crystals as the optimal host material for future use of V_{B}^{-} spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically induced polarization of ^{15}N nuclei in h^{10}B^{15}N, whose mechanism relies on electron-nuclear spin mixing in the V_{B}^{-} ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Affiliation(s)
- T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Z Mu
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Rastoin
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Fraunié
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - E Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - H Schutte
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
| | - G Seine
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - A Claverie
- CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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8
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Durand A, Clua-Provost T, Fabre F, Kumar P, Li J, Edgar JH, Udvarhelyi P, Gali A, Marie X, Robert C, Gérard JM, Gil B, Cassabois G, Jacques V. Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:116902. [PMID: 37774304 DOI: 10.1103/physrevlett.131.116902] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 08/22/2023] [Indexed: 10/01/2023]
Abstract
Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (V_{B}^{-}) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V_{B}^{-} centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. This Letter provides important insights into the properties of V_{B}^{-} centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
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Affiliation(s)
- A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - F Fabre
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - P Kumar
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Li
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - P Udvarhelyi
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - A Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - J M Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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9
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Rizzato R, Schalk M, Mohr S, Hermann JC, Leibold JP, Bruckmaier F, Salvitti G, Qian C, Ji P, Astakhov GV, Kentsch U, Helm M, Stier AV, Finley JJ, Bucher DB. Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing. Nat Commun 2023; 14:5089. [PMID: 37607945 PMCID: PMC10444786 DOI: 10.1038/s41467-023-40473-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/26/2023] [Indexed: 08/24/2023] Open
Abstract
Negatively-charged boron vacancy centers ([Formula: see text]) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Affiliation(s)
- Roberto Rizzato
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- University of Bari, Department of Physics "M. Merlin", Via Amendola 173, Bari, 70125, Italy.
| | - Martin Schalk
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Stephan Mohr
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Jens C Hermann
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Joachim P Leibold
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, James-Franck-Str. 1, Garching bei München, 85748, Germany
| | - Fleming Bruckmaier
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Giovanna Salvitti
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- University of Bologna, Department of Chemistry "G. Ciamician", Via Selmi, 2, Bologna, 40126, Italy
| | - Chenjiang Qian
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Peirui Ji
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Georgy V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
- TU Dresden, 01062, Dresden, Germany
| | - Andreas V Stier
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Dominik B Bucher
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany.
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10
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Gong R, He G, Gao X, Ju P, Liu Z, Ye B, Henriksen EA, Li T, Zu C. Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride. Nat Commun 2023; 14:3299. [PMID: 37280252 DOI: 10.1038/s41467-023-39115-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 05/26/2023] [Indexed: 06/08/2023] Open
Abstract
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ([Formula: see text]) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the [Formula: see text] ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of [Formula: see text]. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of [Formula: see text] to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of [Formula: see text], which are important for future use of defects in hBN as quantum sensors and simulators.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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11
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Ramsay AJ, Hekmati R, Patrickson CJ, Baber S, Arvidsson-Shukur DRM, Bennett AJ, Luxmoore IJ. Coherence protection of spin qubits in hexagonal boron nitride. Nat Commun 2023; 14:461. [PMID: 36709208 PMCID: PMC9884286 DOI: 10.1038/s41467-023-36196-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/17/2023] [Indexed: 01/29/2023] Open
Abstract
Spin defects in foils of hexagonal boron nitride are an attractive platform for magnetic field imaging, since the probe can be placed in close proximity to the target. However, as a III-V material the electron spin coherence is limited by the nuclear spin environment, with spin echo coherence times of ∽100 ns at room temperature accessible magnetic fields. We use a strong continuous microwave drive with a modulation in order to stabilize a Rabi oscillation, extending the coherence time up to ∽ 4μs, which is close to the 10 μs electron spin lifetime in our sample. We then define a protected qubit basis, and show full control of the protected qubit. The coherence times of a superposition of the protected qubit can be as high as 0.8 μs. This work establishes that boron vacancies in hexagonal boron nitride can have electron spin coherence times that are competitive with typical nitrogen vacancy centres in small nanodiamonds under ambient conditions.
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Affiliation(s)
- Andrew J Ramsay
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd., CB3 0HE, Cambridge, UK
| | - Reza Hekmati
- School of Physics and Astronomy, Cardiff University, Queen's Building, CF24 3AA, Cardiff, UK
| | | | - Simon Baber
- Department of Engineering, University of Exeter, EX4 4QF, Exeter, UK
| | | | - Anthony J Bennett
- School of Physics and Astronomy, Cardiff University, Queen's Building, CF24 3AA, Cardiff, UK
- School of Engineering, Cardiff University, Queen's Building, CF24 3AA, Cardiff, UK
| | - Isaac J Luxmoore
- Department of Engineering, University of Exeter, EX4 4QF, Exeter, UK.
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12
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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13
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Li S, Gali A. Identification of an Oxygen Defect in Hexagonal Boron Nitride. J Phys Chem Lett 2022; 13:9544-9551. [PMID: 36201340 PMCID: PMC9589898 DOI: 10.1021/acs.jpclett.2c02687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/04/2022] [Indexed: 05/30/2023]
Abstract
Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are promising building blocks for quantum information processing. Although numerous defect-related single-photon sources and a few quantum bits have been found, except for the boron vacancy, their identification is still elusive. Here, we demonstrate that the comparison of experimental and first-principles simulated electron paramagnetic resonance (EPR) spectra is a powerful tool for defect identification in hBN, and first-principles modeling is inevitable in this process as a result of the dense nuclear spin environment of hBN. In particular, a recently observed EPR center is associated with the negatively charged oxygen vacancy complex by means of the many-body perturbation theory method on top of hybrid density functional calculations. To our surprise, the negatively charged oxygen vacancy complex produces a coherent emission around 2 eV with a well-reproducing previously recorded photoluminescence spectrum of some quantum emitters, according to our calculations.
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Affiliation(s)
- Song Li
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Adam Gali
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
- Department
of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111Budapest, Hungary
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14
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Liu W, Ivády V, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Guo NJ, Yan FF, Li Q, Wang JF, Xu JS, Liu X, Zhou ZQ, Dong Y, Chen XD, Sun FW, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride. Nat Commun 2022; 13:5713. [PMID: 36175507 PMCID: PMC9522675 DOI: 10.1038/s41467-022-33399-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.
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Affiliation(s)
- Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Viktor Ivády
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Street 38, D-01187 Dresden, Germany
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Adam Gali
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
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15
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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16
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Gao X, Vaidya S, Li K, Ju P, Jiang B, Xu Z, Allcca AEL, Shen K, Taniguchi T, Watanabe K, Bhave SA, Chen YP, Ping Y, Li T. Nuclear spin polarization and control in hexagonal boron nitride. NATURE MATERIALS 2022; 21:1024-1028. [PMID: 35970964 DOI: 10.1038/s41563-022-01329-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ([Formula: see text]) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of [Formula: see text] defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear-nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Sumukh Vaidya
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Kejun Li
- Department of Physics, University of California, Santa Cruz, CA, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai, Japan
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA.
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.
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