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Zhou T, Du WS, Wang WH, Yang Q, Miao HD, Zhou Y, Zhang Z, Zhao Y, Jia H, Liu S, Zhang Z, Chen T, Huang W, Chen JJ, Tan ZB, Yu DP. Superconducting diode effect in the Weyl semimetal Td-MoTe 2 that has a surface modulated by Al nanoparticles. NANOSCALE 2025. [PMID: 39902752 DOI: 10.1039/d4nr04220d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/06/2025]
Abstract
Breaking both inversion and time reversal symmetry could lead to nonreciprocal current transport in a superconductor, where current is dissipationless in one direction and dissipative in the opposite direction, which is called the superconducting diode effect (SDE). We studied SDE in the type-II Weyl semimetal Td-MoTe2 that is covered with Al nanoparticles. Asymmetric V-I characteristics have been measured under a magnetic field. The superconducting diode efficiency reaches as high as 30%. Besides SDE under the out-of-plane field, nonreciprocal supercurrent transport under the in-plane field has been observed. Intriguingly, the maximum SDE occurs in the in-plane field parallel to the current direction, which contradicts present theories. Our work provides further understanding of the origins of the SDE.
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Affiliation(s)
- Tengfei Zhou
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wan-Shun Du
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wen-Hao Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qiang Yang
- International Quantum Academy, Shenzhen 518048, China
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Hai-Dong Miao
- International Quantum Academy, Shenzhen 518048, China
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Yangbo Zhou
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, China
| | - Zongteng Zhang
- Department of Physics, College of Science, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yue Zhao
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- Department of Physics, College of Science, Southern University of Science and Technology, Shenzhen 518055, China
| | - Hao Jia
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Song Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhensheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tingyong Chen
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wen Huang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jing-Jing Chen
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhen-Bing Tan
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Da-Peng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- International Quantum Academy, Shenzhen 518048, China
- Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
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2
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Qi S, Ge J, Ji C, Ai Y, Ma G, Wang Z, Cui Z, Liu Y, Wang Z, Wang J. High-temperature field-free superconducting diode effect in high-T c cuprates. Nat Commun 2025; 16:531. [PMID: 39788968 PMCID: PMC11718281 DOI: 10.1038/s41467-025-55880-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Accepted: 01/03/2025] [Indexed: 01/12/2025] Open
Abstract
The superconducting diode effect (SDE) is defined by the difference in the magnitude of critical currents applied in opposite directions. It has been observed in various superconducting systems and attracted high research interests. However, the operating temperature of the SDE is typically low and/or the sample structure is rather complex. For the potential applications in non-dissipative electronics, efficient superconducting diodes working in zero magnetic field with high operating temperatures and a simple configuration are highly desired. Here, we report the observation of a SDE under zero magnetic field with operating temperatures up to 72 K and efficiency as high as 22% at 53 K in high-transition-temperature (high-Tc) cuprate superconductor Bi2Sr2CaCu2O8+δ (BSCCO) flake devices. The rectification effect persists beyond two hundred sweeping cycles, confirming the stability of the superconducting diode. Our results offer promising developments for potential applications in non-dissipative electronics, and provide insights into the mechanism of field-free SDE and symmetry breakings in high-Tc superconductors.
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Affiliation(s)
- Shichao Qi
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Chengcheng Ji
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- Hefei National Laboratory, Hefei, China
| | - Yiwen Ai
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Gaoxing Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Ziqiao Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Zihan Cui
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Yi Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, China
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
- Hefei National Laboratory, Hefei, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
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3
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Chen S, Park S, Vool U, Maksimovic N, Broadway DA, Flaks M, Zhou TX, Maletinsky P, Stern A, Halperin BI, Yacoby A. Current induced hidden states in Josephson junctions. Nat Commun 2024; 15:8059. [PMID: 39277615 PMCID: PMC11401915 DOI: 10.1038/s41467-024-52271-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2024] [Accepted: 08/28/2024] [Indexed: 09/17/2024] Open
Abstract
Josephson junctions enable dissipation-less electrical current through metals and insulators below a critical current. Despite being central to quantum technology based on superconducting quantum bits and fundamental research into self-conjugate quasiparticles, the spatial distribution of super current flow at the junction and its predicted evolution with current bias and external magnetic field remain experimentally elusive. Revealing the hidden current flow, featureless in electrical resistance, helps understanding unconventional phenomena such as the nonreciprocal critical current, i.e., Josephson diode effect. Here we introduce a platform to visualize super current flow at the nanoscale. Utilizing a scanning magnetometer based on nitrogen vacancy centers in diamond, we uncover competing ground states electrically switchable within the zero-resistance regime. The competition results from the superconducting phase re-configuration induced by the Josephson current and kinetic inductance of thin-film superconductors. We further identify a new mechanism for the Josephson diode effect involving the Josephson current-induced phase. The nanoscale super current flow emerges as a new experimental observable for elucidating unconventional superconductivity, and optimizing quantum computation and energy-efficient devices.
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Affiliation(s)
- Shaowen Chen
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA.
| | - Seunghyun Park
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Uri Vool
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Nikola Maksimovic
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - David A Broadway
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Mykhailo Flaks
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Tony X Zhou
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Northrop Grumman Mission Systems, Linthicum, MD, 21090, USA
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Ady Stern
- Weizmann Institute of Science, Rehovot, 76100, Israel
| | | | - Amir Yacoby
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA.
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4
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Su H, Wang JY, Gao H, Luo Y, Yan S, Wu X, Li G, Shen J, Lu L, Pan D, Zhao J, Zhang P, Xu HQ. Microwave-Assisted Unidirectional Superconductivity in Al-InAs Nanowire-Al Junctions under Magnetic Fields. PHYSICAL REVIEW LETTERS 2024; 133:087001. [PMID: 39241722 DOI: 10.1103/physrevlett.133.087001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 05/05/2024] [Accepted: 07/18/2024] [Indexed: 09/09/2024]
Abstract
Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the "superconducting diode effect." Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to nonequilibrium dynamics or dissipation in periodically driven superconducting systems.
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Affiliation(s)
- Haitian Su
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
| | | | - Han Gao
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
| | - Yi Luo
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
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5
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Liu F, Itahashi YM, Aoki S, Dong Y, Wang Z, Ogawa N, Ideue T, Iwasa Y. Superconducting diode effect under time-reversal symmetry. SCIENCE ADVANCES 2024; 10:eado1502. [PMID: 39083606 PMCID: PMC11290479 DOI: 10.1126/sciadv.ado1502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 06/17/2024] [Indexed: 08/02/2024]
Abstract
In noncentrosymmetric superconductors, superconducting and normal conductions can interchange on the basis of the current flow direction. This effect is termed a superconducting diode effect (SDE), which is a focal point of recent research. The broken inversion and time-reversal symmetry is believed to be the requirements of SDE, but their intrinsic role has remained elusive. Here, we report strain-controlled SDEs in a layered trigonal superconductor, PbTaSe2. The SDE was found exclusively in a strained device with its absence in an unstrained device despite that it is allowed in unstrained trigonal structure. Moreover, the zero-field or magnetic field-even (magnetic field-odd) SDE is observed when the strain and current are along armchair (zigzag) direction The results unambiguously demonstrate the intrinsic SDE under time-reversal symmetry and the critical role of strain-induced electric polarization.
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Affiliation(s)
- Fengshuo Liu
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuki M. Itahashi
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shunta Aoki
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Ziqian Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Toshiya Ideue
- Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
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6
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Araujo CILD, Virtanen P, Spies M, González-Orellana C, Kerschbaumer S, Ilyn M, Rogero C, Heikkilä TT, Giazotto F, Strambini E. Superconducting spintronic heat engine. Nat Commun 2024; 15:4823. [PMID: 38844436 PMCID: PMC11156981 DOI: 10.1038/s41467-024-49052-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 05/23/2024] [Indexed: 06/09/2024] Open
Abstract
Heat engines are key devices that convert thermal energy into usable energy. Strong thermoelectricity, at the basis of electrical heat engines, is present in superconducting spin tunnel barriers at cryogenic temperatures where conventional semiconducting or metallic technologies cease to work. Here we realize a superconducting spintronic heat engine consisting of a ferromagnetic insulator/superconductor/insulator/ferromagnet tunnel junction (EuS/Al/AlOx/Co). The efficiency of the engine is quantified for bath temperatures ranging from 25 mK up to 800 mK, and at different load resistances. Moreover, we show that the sign of the generated thermoelectric voltage can be inverted according to the parallel or anti-parallel orientation of the two ferromagnetic layers, EuS and Co. This realizes a thermoelectric spin valve controlling the sign and strength of the Seebeck coefficient, thereby implementing a thermoelectric memory cell. We propose a theoretical model that allows describing the experimental data and predicts the engine efficiency for different device parameters.
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Affiliation(s)
- Clodoaldo Irineu Levartoski de Araujo
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
- Departamento de Fìsica, Laboratório de Spintrônica e Nanomagnetismo, Universidade Federal de Viçosa, Viçosa, Minas Gerais, Brazil
| | - Pauli Virtanen
- Department of Physics and Nanoscience Center, University of Jyväskylä, Jyväskylä, Finland.
| | - Maria Spies
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
| | - Carmen González-Orellana
- Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastián, Spain
| | - Samuel Kerschbaumer
- Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastián, Spain
| | - Maxim Ilyn
- Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastián, Spain
| | - Celia Rogero
- Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastián, Spain
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Spain
| | - Tero Tapio Heikkilä
- Department of Physics and Nanoscience Center, University of Jyväskylä, Jyväskylä, Finland
| | - Francesco Giazotto
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
| | - Elia Strambini
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy.
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7
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Sekiguchi F, Narita H, Hirori H, Ono T, Kanemitsu Y. Anomalous behavior of critical current in a superconducting film triggered by DC plus terahertz current. Nat Commun 2024; 15:4435. [PMID: 38789464 PMCID: PMC11126563 DOI: 10.1038/s41467-024-48738-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Accepted: 05/07/2024] [Indexed: 05/26/2024] Open
Abstract
The critical current in a superconductor (SC) determines the performance of many SC devices, including SC diodes which have attracted recent attention. Hitherto, studies of SC diodes are limited in the DC-field measurements, and their performance under a high-frequency current remains unexplored. Here, we conduct the first investigation on the interaction between the DC and terahertz (THz) current in a SC artificial superlattice. We found that the DC critical current is sensitively modified by THz pulse excitations in a nontrivial manner. In particular, at low-frequency THz excitations below the SC gap, the critical current becomes sensitive to the THz-field polarization direction. Furthermore, we observed anomalous behavior in which a supercurrent flows with an amplitude larger than the modified critical current. Assuming that vortex depinning determines the critical current, we show that the THz-current-driven vortex dynamics reproduce the observed behavior. While the delicate nonreciprocity in the critical current is obscured by the THz pulse excitations, the interplay between the DC and THz current causes a non-monotonic SC/normal-state switching with current amplitude, which can pave a pathway to developing SC devices with novel functionalities.
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Affiliation(s)
- Fumiya Sekiguchi
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.
| | - Hideki Narita
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Hideki Hirori
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Teruo Ono
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Yoshihiko Kanemitsu
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.
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8
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Li C, Lyu YY, Yue WC, Huang P, Li H, Li T, Wang CG, Yuan Z, Dong Y, Ma X, Tu X, Tao T, Dong S, He L, Jia X, Sun G, Kang L, Wang H, Peeters FM, Milošević MV, Wu P, Wang YL. Unconventional Superconducting Diode Effects via Antisymmetry and Antisymmetry Breaking. NANO LETTERS 2024; 24:4108-4116. [PMID: 38536003 DOI: 10.1021/acs.nanolett.3c05008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Symmetry breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon: the superconducting diode effect. However, generating and precisely controlling the superconducting diode effect pose significant challenges. Here, we take a novel route with the deliberate manipulation of magnetic charge potentials to realize unconventional superconducting flux-quantum diode effects. We achieve this through suitably tailored nanoengineered arrays of nanobar magnets on top of a superconducting thin film. We demonstrate the vital roles of inversion antisymmetry and its breaking in evoking unconventional superconducting effects, namely a magnetically symmetric diode effect and an odd-parity magnetotransport effect. These effects are nonvolatilely controllable through in situ magnetization switching of the nanobar magnets. Our findings promote the use of antisymmetry (breaking) for initiating unconventional superconducting properties, paving the way for exciting prospects and innovative functionalities in superconducting electronics.
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Affiliation(s)
- Chong Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Yang-Yang Lyu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Wen-Cheng Yue
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Peiyuan Huang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Haojie Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Tianyu Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Chen-Guang Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Zixiong Yuan
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ying Dong
- College of Metrology & Measurement Engineering, China Jiliang University, Hangzhou 310018, China
| | - Xiaoyu Ma
- Microsoft, One Microsoft Way, Redmond, Washington 98052, United States
| | - Xuecou Tu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Tao Tao
- National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China
| | - Sining Dong
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China
| | - Liang He
- National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China
| | - Xiaoqing Jia
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Guozhu Sun
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Huabing Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Francois M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Departamento de Física, Universidade Federal do Ceará́, Campus do Pici, 60455-900 Fortaleza, Ceará, Brazil
| | - Milorad V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso 78060-900, Brazil
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
| | - Yong-Lei Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
- Purple Mountain Laboratories, Nanjing 211111, China
- National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China
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9
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Banerjee S, Scheurer MS. Enhanced Superconducting Diode Effect due to Coexisting Phases. PHYSICAL REVIEW LETTERS 2024; 132:046003. [PMID: 38335356 DOI: 10.1103/physrevlett.132.046003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Accepted: 12/14/2023] [Indexed: 02/12/2024]
Abstract
The superconducting diode effect refers to an asymmetry in the critical supercurrent J_{c}(n[over ^]) along opposite directions, J_{c}(n[over ^])≠J_{c}(-n[over ^]). While the basic symmetry requirements for this effect are known, it is, for junction-free systems, difficult to capture within current theoretical models the large current asymmetries J_{c}(n[over ^])/J_{c}(-n[over ^]) recently observed in experiment. We here propose and develop a theory for an enhancement mechanism of the diode effect arising from spontaneous symmetry breaking. We show-both within a phenomenological and a microscopic theory-that there is a coupling of the supercurrent and the underlying symmetry-breaking order parameter. This coupling can enhance the current asymmetry significantly. Our work might not only provide a possible explanation for recent experiments on trilayer graphene but also pave the way for future realizations of the superconducting diode effect with large current asymmetries.
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Affiliation(s)
- Sayan Banerjee
- Institute for Theoretical Physics III, University of Stuttgart, 70550 Stuttgart, Germany and Institute for Theoretical Physics, University of Innsbruck, Innsbruck A-6020, Austria
| | - Mathias S Scheurer
- Institute for Theoretical Physics III, University of Stuttgart, 70550 Stuttgart, Germany and Institute for Theoretical Physics, University of Innsbruck, Innsbruck A-6020, Austria
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