1
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Komza L, Samutpraphoot P, Odeh M, Tang YL, Mathew M, Chang J, Song H, Kim MK, Xiong Y, Hautier G, Sipahigil A. Indistinguishable photons from an artificial atom in silicon photonics. Nat Commun 2024; 15:6920. [PMID: 39134534 PMCID: PMC11319600 DOI: 10.1038/s41467-024-51265-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Accepted: 08/02/2024] [Indexed: 08/15/2024] Open
Abstract
Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.
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Affiliation(s)
- Lukasz Komza
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Polnop Samutpraphoot
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Mutasem Odeh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yu-Lung Tang
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Milena Mathew
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Jiu Chang
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Hanbin Song
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Myung-Ki Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, 14 Engineering Dr, Hanover, NH, 03755, USA
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, 14 Engineering Dr, Hanover, NH, 03755, USA
| | - Alp Sipahigil
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA.
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2
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Saggio V, Errando-Herranz C, Gyger S, Panuski C, Prabhu M, De Santis L, Christen I, Ornelas-Huerta D, Raniwala H, Gerlach C, Colangelo M, Englund D. Cavity-enhanced single artificial atoms in silicon. Nat Commun 2024; 15:5296. [PMID: 38906895 PMCID: PMC11192735 DOI: 10.1038/s41467-024-49302-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Accepted: 05/28/2024] [Indexed: 06/23/2024] Open
Abstract
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.
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Affiliation(s)
- Valeria Saggio
- Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Carlos Errando-Herranz
- Massachusetts Institute of Technology, Cambridge, MA, USA
- University of Münster, Münster, Germany
| | - Samuel Gyger
- Massachusetts Institute of Technology, Cambridge, MA, USA
- KTH Royal Institute of Technology, Stockholm, Sweden
| | | | - Mihika Prabhu
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lorenzo De Santis
- Massachusetts Institute of Technology, Cambridge, MA, USA
- QuTech, Delft University of Technology, Delft, The Netherlands
| | - Ian Christen
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - Hamza Raniwala
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Connor Gerlach
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - Dirk Englund
- Massachusetts Institute of Technology, Cambridge, MA, USA
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3
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Day AM, Sutula M, Dietz JR, Raun A, Sukachev DD, Bhaskar MK, Hu EL. Electrical manipulation of telecom color centers in silicon. Nat Commun 2024; 15:4722. [PMID: 38830869 PMCID: PMC11148098 DOI: 10.1038/s41467-024-48968-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 05/14/2024] [Indexed: 06/05/2024] Open
Abstract
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.
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Affiliation(s)
- Aaron M Day
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Madison Sutula
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Jonathan R Dietz
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Alexander Raun
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | | | | | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
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4
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Jhuria K, Ivanov V, Polley D, Zhiyenbayev Y, Liu W, Persaud A, Redjem W, Qarony W, Parajuli P, Ji Q, Gonsalves AJ, Bokor J, Tan LZ, Kanté B, Schenkel T. Programmable quantum emitter formation in silicon. Nat Commun 2024; 15:4497. [PMID: 38802357 PMCID: PMC11130136 DOI: 10.1038/s41467-024-48714-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 05/07/2024] [Indexed: 05/29/2024] Open
Abstract
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.
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Affiliation(s)
- K Jhuria
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - V Ivanov
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Virginia Tech National Security Institute, Blacksburg, VA, USA
| | - D Polley
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Physics, BITS Pilani-Hyderabad Campus, Telangana, India
| | - Y Zhiyenbayev
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - W Liu
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - A Persaud
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - W Redjem
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- College of Nanoscale Science and Engineering, SUNY Albany, Albany, NY, USA
| | - W Qarony
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - P Parajuli
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Q Ji
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - A J Gonsalves
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - L Z Tan
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - B Kanté
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - T Schenkel
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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5
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Iyer PP, Prescott S, Addamane S, Jung H, Renteria E, Henshaw J, Mounce A, Luk TS, Mitrofanov O, Brener I. Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces. NANO LETTERS 2024. [PMID: 38620181 DOI: 10.1021/acs.nanolett.3c04846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an Al0.4Ga0.6As Huygens' metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens' metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.
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Affiliation(s)
- Prasad P Iyer
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Samuel Prescott
- University College London, Electronic and Electrical Engineering, London WC1E 7JE, U.K
| | - Sadhvikas Addamane
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Hyunseung Jung
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Emma Renteria
- Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87185, United States
| | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Andrew Mounce
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Ting S Luk
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Oleg Mitrofanov
- University College London, Electronic and Electrical Engineering, London WC1E 7JE, U.K
| | - Igal Brener
- Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
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6
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Johnston A, Felix-Rendon U, Wong YE, Chen S. Cavity-coupled telecom atomic source in silicon. Nat Commun 2024; 15:2350. [PMID: 38490992 PMCID: PMC10943074 DOI: 10.1038/s41467-024-46643-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 03/05/2024] [Indexed: 03/18/2024] Open
Abstract
Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
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Affiliation(s)
- Adam Johnston
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Ulises Felix-Rendon
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Yu-En Wong
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Songtao Chen
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA.
- Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA.
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7
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Phillips CL, Brash AJ, Godsland M, Martin NJ, Foster A, Tomlinson A, Dost R, Babazadeh N, Sala EM, Wilson L, Heffernan J, Skolnick MS, Fox AM. Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity. Sci Rep 2024; 14:4450. [PMID: 38396018 PMCID: PMC11310300 DOI: 10.1038/s41598-024-55024-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 02/16/2024] [Indexed: 02/25/2024] Open
Abstract
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from a Purcell factor of 5, owing to integration of the QD within a low-mode-volume photonic crystal cavity. Through in-situ control of the sample temperature, we show both temperature tuning of the QD's emission wavelength and a preserved single photon emission purity at temperatures up to 25K. These findings suggest the viability of QD-based, cryogen-free C-band single photon sources, supporting applicability in quantum communication technologies.
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Affiliation(s)
| | - Alistair J Brash
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - Max Godsland
- EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
| | - Nicholas J Martin
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - Andrew Foster
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - Anna Tomlinson
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - René Dost
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - Nasser Babazadeh
- EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
| | - Elisa M Sala
- EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
| | - Luke Wilson
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - Jon Heffernan
- EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
| | - Maurice S Skolnick
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
| | - A Mark Fox
- Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
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8
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Kumar A, Samaner Ç, Cholsuk C, Matthes T, Paçal S, Oyun Y, Zand A, Chapman RJ, Saerens G, Grange R, Suwanna S, Ateş S, Vogl T. Polarization Dynamics of Solid-State Quantum Emitters. ACS NANO 2024. [PMID: 38335970 PMCID: PMC10883057 DOI: 10.1021/acsnano.3c08940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Quantum emitters in solid-state crystals have recently attracted a great deal of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that plays a crucial role in various applications, such as quantum computation, which uses the indistinguishability of photons. However, the degree of single-photon polarization is typically quantified using the time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single-photon sources to reveal the origin and temporal evolution of the dipole orientation in solid-state quantum emitters. The angles of the excitation and emission dipoles relative to the crystal axes were determined experimentally and then calculated using density functional theory, which resulted in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics revealed a strongly modified linear polarization visibility that depends on the excited-state decay time of the individual excitation. This effect can potentially be traced back to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further improve the performance of polarization-sensitive experiments, particularly that for quantum communication with single-photon emitters.
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Affiliation(s)
- Anand Kumar
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Çağlar Samaner
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Chanaprom Cholsuk
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Tjorben Matthes
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Serkan Paçal
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Yağız Oyun
- Department of Photonics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Ashkan Zand
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Robert J Chapman
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Grégoire Saerens
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Sujin Suwanna
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, 10400 Bangkok, Thailand
| | - Serkan Ateş
- Department of Physics, İzmir Institute of Technology, 35430 İzmir, Turkey
| | - Tobias Vogl
- Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany
- Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
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9
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Islam F, Lee CM, Harper S, Rahaman MH, Zhao Y, Vij NK, Waks E. Cavity-Enhanced Emission from a Silicon T Center. NANO LETTERS 2024; 24:319-325. [PMID: 38147350 DOI: 10.1021/acs.nanolett.3c04056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Silicon T centers present the promising possibility of generating optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work, we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a 2 order of magnitude increase in the brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way toward efficient spin-photon interfaces in silicon photonics.
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Affiliation(s)
- Fariba Islam
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Chang-Min Lee
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Samuel Harper
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Mohammad Habibur Rahaman
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Yuqi Zhao
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Neelesh Kumar Vij
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
| | - Edo Waks
- Institute for Research in Electronics and Applied Physics and Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, United States
- Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740, United States
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10
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Rinner S, Burger F, Gritsch A, Schmitt J, Reiserer A. Erbium emitters in commercially fabricated nanophotonic silicon waveguides. NANOPHOTONICS 2023; 12:3455-3462. [PMID: 38013784 PMCID: PMC10432618 DOI: 10.1515/nanoph-2023-0287] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Accepted: 07/10/2023] [Indexed: 11/29/2023]
Abstract
Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here, we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of <2 GHz and a homogeneous linewidth of <30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step toward long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.
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Affiliation(s)
- Stephan Rinner
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Florian Burger
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Andreas Gritsch
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Jonas Schmitt
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Andreas Reiserer
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
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