Tunable angle-dependent electrochemistry at twisted bilayer graphene with moiré flat bands

Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

For well-passivated semiconductor materials, the density of states (DOS) at the band edge determines the concentration of electrons (or holes) available to participate in photo/electrochemical redox and chemical reactions. Electrochemical impedance enables the characterization of photo-electrode DOS in a functional, in situ, electrochemical environment. However, the in situ electrochemical approach remains underutilized for band structure characterization of inorganic semiconductors. In this work, we demonstrate that the DOS of the well-passivated, highly ordered semiconductors silicon and germanium is directly probed by electrochemical impedance spectroscopy (EIS). More specifically, EIS measurements of the chemical capacitance in contact with electrolyte enable direct analysis of the DOS properties. From the capacitance-potential plot, the following parameters can be extracted: Fermi level, valence band maximum, conduction band minimum, and a quantitative value of the number of states at each potential. This study aims to establish the groundwork for future EIS investigations of electronically modified semiconductor interfaces with covalently bound organic molecules, organometallic catalysts, or more complex biorelated functionalizations.

Five years of scanning electrochemical cell microscopy (SECCM): new insights and innovations

Scanning electrochemical cell microscopy (SECCM) is a nanopipette-based technique which enables measurement of localised electrochemistry. SECCM has found use in a wide range of electrochemical applications, and due to the wider uptake of this technique in recent years, new applications and techniques have been developed. This minireview has collected all SECCM research articles published in the last 5 years, to demonstrate and celebrate the recent advances, and to make it easier for SECCM researchers to remain well-informed. The wide range of SECCM applications is demonstrated, which are categorised here into electrocatalysis, electroanalysis, photoelectrochemistry, biological materials, energy storage materials, corrosion, electrosynthesis, and instrumental development. In the collection of this library of SECCM studies, a few key trends emerge. (1) The range of materials and processes explored with SECCM has grown, with new applications emerging constantly. (2) The instrumental capabilities of SECCM have grown, with creative techniques being developed from research groups worldwide. (3) The SECCM research community has grown significantly, with adoption of the SECCM technique becoming more prominent.

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.

Moiré superlattices in twisted two-dimensional halide perovskites

Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional materials. Here we introduce moiré superlattices leveraging ultrathin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically predicted flat band. This research showcases the promise of two-dimensional perovskites as unique room-temperature moiré materials.

Twisto-Electrochemical Activity Volcanoes in Trilayer Graphene

In this work, we develop a twist-dependent electrochemical activity map, combining a low-energy continuum electronic structure model with modified Marcus-Hush-Chidsey kinetics in trilayer graphene. We identify a counterintuitive rate enhancement region spanning the magic angle curve and incommensurate twists in the system geometry. We find a broad activity peak with a ruthenium hexamine redox couple in regions corresponding to both magic angles and incommensurate angles, a result qualitatively distinct from the twisted bilayer case. Flat bands and incommensurability offer new avenues for reaction rate enhancements in electrochemical transformations.

Constant potential energetics of metallic and semiconducting electrodes: A benchmark study on 2D materials

Grand-canonical (GC) constant-potential methods within an implicit solvent environment provide a general approach to compute the potential-dependent energetics at electrified solid-liquid interfaces with first-principles density-functional theory. Here, we use a mindfully chosen set of 27 isostructural 2D metal halides MX2 to analyze the variation of this energetics when the electronic structure changes from metallic to semiconducting and insulating state. Apart from expectable changes due to the opening up of the electronic bandgap, the calculations also show an increasing sensitivity to the numerical Brillouin zone integration and electronic smearing, which imposes computational burdens in practice. We rationalize these findings within the picture of the total interfacial capacitance arising from a series connection of the electrochemical double-layer capacitance and the so-called quantum capacitance resulting from the filling of electronic states inside the electrode. For metals, the electrochemical double-layer capacitance dominates at all potentials, and the entire potential drop takes place in the electrolyte. For semiconductors, the potential drop occurs instead fully or partially inside the electrode at potentials within or just outside the bandgap. For 2D semiconductors, the increased sensitivity to numerical parameters then results from the concomitantly increased contribution of the quantum capacitance that is harder to converge. Fortunately, this understanding motivates a simple extension of the CHE + DL approximation for metals, which provides the approximate GC energetics of 2D semiconductors using only quantities that can be obtained from computationally undemanding calculations at the point of zero charge and a generic double-layer capacitance.

Epitaxial Metal Electrodeposition Controlled by Graphene Layer Thickness

Control over material structure and morphology during electrodeposition is necessary for material synthesis and energy applications. One approach to guide crystallite formation is to take advantage of epitaxy on a current collector to facilitate crystallographic control. Single-layer graphene on metal foils can promote "remote epitaxy" during Cu and Zn electrodeposition, resulting in growth of metal that is crystallographically aligned to the substrate beneath graphene. However, the substrate-graphene-deposit interactions that allow for epitaxial electrodeposition are not well understood. Here, we investigate how different graphene layer thicknesses (monolayer, bilayer, trilayer, and graphite) influence the electrodeposition of Zn and Cu. Scanning transmission electron microscopy and electron backscatter diffraction are leveraged to understand metal morphology and structure, demonstrating that remote epitaxy occurs on mono- and bilayer graphene but not trilayer or thicker. Density functional theory (DFT) simulations reveal the spatial electronic interactions through thin graphene that promote remote epitaxy. This work advances our understanding of electrochemical remote epitaxy and provides strategies for improving control over electrodeposition.

Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics

The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".

Spotlight: Visualization of Moiré Quantum Phenomena in Transition Metal Dichalcogenide with Scanning Tunneling Microscopy

Transition metal dichalcogenide (TMD) moiré superlattices have emerged as a significant area of study in condensed matter physics. Thanks to their superior optical properties, tunable electronic band structure, strong Coulomb interactions, and quenched electron kinetic energy, they offer exciting avenues to explore correlated quantum phenomena, topological properties, and light-matter interactions. In recent years, scanning tunneling microscopy (STM) has made significant impacts on the study of these fields by enabling intrinsic surface visualization and spectroscopic measurements with unprecedented atomic scale detail. Here, we spotlight the key findings and innovative developments in imaging and characterization of TMD heterostructures via STM, from its initial implementation on the in situ grown sample to the latest photocurrent tunneling microscopy. The evolution in sample design, progressing from a conductive to an insulating substrate, has not only expanded our control over TMD moiré superlattices but also promoted an understanding of their structures and strongly correlated properties, such as the structural reconstruction and formation of generalized two-dimensional Wigner crystal states. In addition to highlighting recent advancements, we outline upcoming challenges, suggest the direction of future research, and advocate for the versatile use of STM to further comprehend and manipulate the quantum dynamics in TMD moiré superlattices.

Electronic structures and quantum capacitance of twisted bilayer graphene with defects based on three-band tight-binding model

Twisted bilayer graphene (tBLG) with C vacancies would greatly improve the density of states (DOS) around the Fermi level (EF) and quantum capacitance; however, the single-band tight-binding model only considering pz orbitals cannot accurately capture the low-energy physics of tBLG with C vacancies. In this work, a three-band tight-binding model containing three p orbitals of C atoms is proposed to explore the modulation mechanism of C vacancies on the DOS and quantum capacitance of tBLG. We first obtain the hopping integral parameters of the three-band tight-binding model, and then explore the electronic structures and the quantum capacitance of tBLG at a twisting angle of θ = 1.47° under different C vacancy concentrations. The impurity states contributed by C atoms with dangling bonds located around the EF and the interlayer hopping interaction could induce band splitting of the impurity states. Therefore, compared with the quantum capacitance of pristine tBLG (∼18.82 μF cm-2) at zero bias, the quantum capacitance is improved to ∼172.76 μF cm-2 at zero bias, and the working window with relatively large quantum capacitance in the low-voltage range is broadened in tBLG with C vacancies due to the enhanced DOS around the EF. Moreover, the quantum capacitance of tBLG is further increased at zero bias with an increase of the C vacancy concentration induced by more impurity states. These findings not only provide a suitable multi-band tight-binding model to describe tBLG with C vacancies but also offer theoretical insight for designing electrode candidates for low-power consumption devices with improved quantum capacitance.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Angle-Resolved Optical Imaging of Interlayer Rotations in Twisted Bilayer Graphene

Twisted bilayer graphene (TBG) is a prototypical layered material whose properties are strongly correlated to interlayer coupling. The two stacked graphene layers with distinct orientations are investigated to generate peculiar optical and electronic phenomena. Thus, the rapid, reliable, and nondestructive twist angle identification technique is of essential importance. Here, we integrated the white light reflection spectra (WLRS), the Raman spectroscopy, and the transmission electron microscope (TEM) to propose a facile RGB optical imaging technique that identified the twist angle of the TBG in a large area intuitively with high efficiency. The RGB technique established a robust correlation between the interlayer rotation angle and the contrast difference in the RGB color channels of a standard optical image. The angle-resolved optical behavior is attributed to the absorption resonance matching with the separation of van Hove singularities in the density of states of the TBG. Our study thus developed a route to identify the rotation angle of stacked bilayer graphene by means of a straightforward optical method, which can be further applied in other stacked van der Waals layered materials.

Stacking Order Engineering of Two-Dimensional Materials and Device Applications

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

Realizing Von Hove singularity (VHS) and extended flat bands of graphene near the Fermi level (EF) is of great significance to explore many-body interactions, with a high tendency towards superconductivity. In this study, we report that the VHS of π* bands near EF can be realized by high-density lithium intercalation in p-type doped twisted bilayer graphene (tBLG). First, a method to predict the highest lithium intercalation in tBLG systems with arbitrary twist angle was established which proves that the interlayer twisting leads to the clustering of lithium ions in the AA-region but reduces the overall concentration. Second, we show that the p-type doping (1.35% boron) in tBLGs enhances their electron acceptance capability by increasing lithium intercalation up to 47%. In this situation, the electron doping by lithium intercalation is sufficient to shift EF near the VHS which offers a strategic path to realize extended flat bands, and to investigate the strong correlations in the tBLG systems.

Polysulfonated covalent organic framework as active electrode host for mobile cation guests in electrochemical soft actuator

Tailoring transfer dynamics of mobile cations across solid-state electrolyte-electrode interfaces is crucial for high-performance electrochemical soft actuators. In general, actuation performance is directly proportional to the affinity of cations and anions in the electrolyte for the opposite electrode surfaces under an applied field. Herein, to maximize electrochemical actuation, we report an electronically conjugated polysulfonated covalent organic framework (pS-COF) used as a common electrolyte-electrode host for 1-ethyl-3-methylimidazolium cation embedded into a Nafion membrane. The pS-COF-based electrochemical actuator exhibits remarkable bending deflection at near-zero voltage (~0.01 V) and previously unattainable blocking force, which is 34 times higher than its own weight. The ultrafast step response shows a very short rising time of 1.59 seconds without back-relaxation, and substantial ultralow-voltage actuation at higher frequencies up to 5.0 hertz demonstrates good application prospects of common electrolyte-electrode hosts. A soft fluidic switch is constructed using the proposed soft actuator as a potential engineering application.

Direct Observation of Locally Modified Excitonic Effects within a Moiré Unit Cell in Twisted Bilayer Graphene

Bilayer graphene, which forms moiré superlattices, possesses distinct electronic and optical properties owing to its hybridized energy band and the emergence of van Hove singularities depending on its twist angle. Extensive research has been conducted on the global characteristics of moiré superlattices induced by their long-range periodicity. However, the local properties, which differ owing to the variations in the three-dimensional atomic arrangement, within a moiré unit cell have been rarely explored. In this study, we demonstrate the highly localized excitation of carbon 1s electrons to unoccupied van Hove singularities in twisted bilayer graphene by electron energy loss spectroscopy using a monochromated transmission electron microscope. The core-level excitations associated with the van Hove singularities exhibit a systematic twist-angle dependence analogous to optical excitations. Furthermore, local variations in the core-level van Hove singularity peaks, which can originate from the core-exciton lifetimes and band modifications corresponding to the local stacking geometry within a moiré unit cell, are unambiguously corroborated.

Nonequilibrium Electrochemical Phase Maps: Beyond Butler-Volmer Kinetics

Accurate models of electrochemical kinetics at electrode-electrolyte interfaces are crucial to understanding the high-rate behavior of energy storage devices. Phase transformation of electrodes is typically treated under equilibrium thermodynamic conditions, while realistic operation is at finite rates. Analyzing phase transformations under nonequilibrium conditions requires integrating nonlinear electrochemical kinetic models with thermodynamic models. This had only previously been demonstrated for Butler-Volmer kinetics, where it can be done analytically. In this work, we develop a software package capable of the efficient numerical inversion of rate relationships for general kinetic models. We demonstrate building nonequilibrium phase maps, including for models such as Marcus-Hush-Chidsey that require computation of an integral, and also discuss the impact of a variety of assumptions and model parameters, particularly on high-rate phase behavior. Even for a fixed set of parameters, the magnitude of the critical current can vary by more than a factor of 2 among kinetic models.

Visualizing the role of applied voltage in non-metal electrocatalysts

Understanding how applied voltage drives the electrocatalytic reaction at the nanoscale is a fundamental scientific problem, particularly in non-metallic electrocatalysts, due to their low intrinsic carrier concentration. Herein, using monolayer molybdenum disulfide (MoS2) as a model system of non-metallic catalyst, the potential drops across the basal plane of MoS2 (ΔVsem) and the electric double layer (ΔVedl) are decoupled quantitatively as a function of applied voltage through in-situ surface potential microscopy. We visualize the evolution of the band structure under liquid conditions and clarify the process of EF keeping moving deep into Ec, revealing the formation process of the electrolyte gating effect. Additionally, electron transfer (ET) imaging reveals that the basal plane exhibits high ET activity, consistent with the results of surface potential measurements. The potential-dependent behavior of kf and ns in the ET reaction are further decoupled based on the measurements of ΔVsem and ΔVedl. Comparing the ET and hydrogen evolution reaction imaging results suggests that the low electrocatalytic activity of the basal plane is mainly due to the absence of active sites, rather than its electron transfer ability. This study fills an experimental gap in exploring driving forces for electrocatalysis at the nanoscale and addresses the long-standing issue of the inability to decouple charge transfer from catalytic processes.

Anomalous Interfacial Electron-Transfer Kinetics in Twisted Trilayer Graphene Caused by Layer-Specific Localization

Interfacial electron-transfer (ET) reactions underpin the interconversion of electrical and chemical energy. It is known that the electronic state of electrodes strongly influences ET rates because of differences in the electronic density of states (DOS) across metals, semimetals, and semiconductors. Here, by controlling interlayer twists in well-defined trilayer graphene moirés, we show that ET rates are strikingly dependent on electronic localization in each atomic layer and not the overall DOS. The large degree of tunability inherent to moiré electrodes leads to local ET kinetics that range over 3 orders of magnitude across different constructions of only three atomic layers, even exceeding rates at bulk metals. Our results demonstrate that beyond the ensemble DOS, electronic localization is critical in facilitating interfacial ET, with implications for understanding the origin of high interfacial reactivity typically exhibited by defects at electrode-electrolyte interfaces.

Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide

The electronic properties of electrode materials play a crucial role in defining their electrochemical behavior in energy conversion and storage devices. The assembly of van der Waals heterostructures and fabrication into mesoscopic devices enable the dependence of an electrochemical response on electronic properties to be systematically interrogated. Here, we evaluate the effect of charge carrier concentration on heterogeneous electron transfer at few-layer MoS₂ electrodes by combining spatially resolved electrochemical measurements with field-effect electrostatic manipulation of band alignment. Steady-state cyclic voltammograms and finite-element simulations reveal a strong modulation of the measured electrochemical response for outer-sphere charge transfer at the electrostatic gate voltage. In addition, spatially resolved voltammetric responses, obtained at a series of locations at the surface of few-layer MoS₂, reveal the governing role of in-plane charge transport on the electrochemical behavior of 2D electrodes, especially under conditions of low carrier densities.

Rotational and dilational reconstruction in transition metal dichalcogenide moiré bilayers

Lattice reconstruction and corresponding strain accumulation plays a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechanisms have relied on simulations. Here, we use interferometric four-dimensional scanning transmission electron microscopy to quantitatively map the mechanical deformations through which reconstruction occurs in small-angle twisted bilayer MoS₂ and WSe₂/MoS₂ heterobilayers. We provide direct evidence that local rotations govern relaxation for twisted homobilayers, while local dilations are prominent in heterobilayers possessing a sufficiently large lattice mismatch. Encapsulation of the moiré layers in hBN further localizes and enhances these in-plane reconstruction pathways by suppressing out-of-plane corrugation. We also find that extrinsic uniaxial heterostrain, which introduces a lattice constant difference in twisted homobilayers, leads to accumulation and redistribution of reconstruction strain, demonstrating another route to modify the moiré potential.

Coupling double flat bands in a quadrangular-star lattice

Most special two-dimensional (2D) lattices, such as Kagome and Lieb lattices, can only generate a single flat band. Here, we propose a 2D lattice named a quadrangular-star lattice (QSL). It can produce coupling double flat bands, which indicates that there exists stronger electronic correlation than in the systems with only one flat band. Moreover, we suggest some 2D carbon allotropes (e.g. CQSL-12 and CQSL-20), made of carbon rings and dimers, to realize QSL in real materials. By calculating the band structures of the carbon materials, we find that there are indeed two coupling flat bands around the Fermi level. Hole doping leads to strong magnetism of the carbon materials. When the two flat bands are half filled, i.e., in the cases of one- and three-hole doping, the magnetic momentums mainly distribute on the atoms of the carbon rings and dimers, respectively. Even in the case of two-hole doping, the carbon structure also shows ferromagnetic characteristics, and the total magnetic moments are larger than the former two cases.

Domain-Dependent Surface Adhesion in Twisted Few-Layer Graphene: Platform for Moiré-Assisted Chemistry

Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases thanks to the multiple degrees of freedom available for controlling their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and trilayer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moiré superlattice in their vicinity at the micrometer scale. Our findings establish a new approach to controlling moiré-assisted chemistry and nanoengineering.

Operando Scanning Electrochemical Probe Microscopy during Electrocatalysis

Scanning electrochemical probe microscopy (SEPM) techniques can disclose the local electrochemical reactivity of interfaces in single-entity and sub-entity studies. Operando SEPM measurements consist of using a SEPM tip to investigate the performance of electrocatalysts, while the reactivity of the interface is simultaneously modulated. This powerful combination can correlate electrochemical activity with changes in surface properties, e.g., topography and structure, as well as provide insight into reaction mechanisms. The focus of this review is to reveal the recent progress in local SEPM measurements of the catalytic activity of a surface toward the reduction and evolution of O₂ and H₂ and electrochemical conversion of CO₂. The capabilities of SEPMs are showcased, and the possibility of coupling other techniques to SEPMs is presented. Emphasis is given to scanning electrochemical microscopy (SECM), scanning ion conductance microscopy (SICM), electrochemical scanning tunneling microscopy (EC-STM), and scanning electrochemical cell microscopy (SECCM).

An Atomistic Insight into Moiré Reconstruction in Twisted Bilayer Graphene beyond the Magic Angle

Twisted bilayer graphene exhibits electronic properties strongly correlated with the size and arrangement of moiré patterns. While rigid rotation of the two graphene layers results in a moiré interference pattern, local rearrangements of atoms due to interlayer van der Waals interactions result in atomic reconstruction within the moiré cells. Manipulating these patterns by controlling the twist angle and externally applied strain provides a promising route to tuning their properties. Atomic reconstruction has been extensively studied for angles close to or smaller than the magic angle (θ _m = 1.1°). However, this effect has not been explored for applied strain and is believed to be negligible for high twist angles. Using interpretive and fundamental physical measurements, we use theoretical and numerical analyses to resolve atomic reconstruction in angles above θ _m . In addition, we propose a method to identify local regions within moiré cells and track their evolution with strain for a range of representative high twist angles. Our results show that atomic reconstruction is actively present beyond the magic angle, and its contribution to the moiré cell evolution is significant. Our theoretical method to correlate local and global phonon behavior further validates the role of reconstruction at higher angles. Our findings provide a better understanding of moiré reconstruction in large twist angles and the evolution of moiré cells under the application of strain, which might be potentially crucial for twistronics-based applications.

Helical Trilayer Nanographenes with Tunable Interlayer Overlaps

The synthesis of well-defined nanocarbon multilayers, beyond the bilayer structure, is still a challenging goal. Herein, two trilayer nanographenes were synthesized by covalently linking nanographene layers through helicene bridges. The structural characterization of the trilayer nanographenes revealed a compact trilayer-stacked architecture. The introduction of a furan ring into the helicene linker modulates the interlayer overlap and π-conjugation of the trilayer nanographenes, enabling the tuning of the interlayer coupling, as demonstrated by optical, electrochemical, and theoretical analyses. Both synthesized trilayer nanographenes are rigid chiral nanocarbons and show a chirality transfer from the helicene moiety to the stacked nanographene layers. These helical trilayer nanographenes reported here represent the covalently linked multilayer nanographenes rather than bilayer ones, showing the tunable multilayer stacking structure.

Recent Advances in Ultrathin Chiral Metasurfaces by Twisted Stacking

Artificial chiral nanostructures have been subjected to extensive research for their unique chiroptical activities. Planarized chiral films of ultrathin thicknesses are in particular demand for easy on-chip integration and improved energy efficiency as polarization-sensitive metadevices. Recently, controlled twisted stacking of two or more layers of nanomaterials, such as 2D van der Waals materials, ultrathin films, or traditional metasurfaces, at an angle has emerged as a general strategy to introduce optical chirality into achiral solid-state systems. This method endows new degrees of freedom, e.g., the interlayer twist angle, to flexibly engineer and tune the chiroptical responses without having to change the material or the design, thus greatly facilitating the development of multifunctional metamaterials. In this review, recent exciting progress in planar chiral metasurfaces are summarized and discussed from the viewpoints of building blocks, fabrication methods, as well as circular dichroism and modulation thereof in twisted stacked nanostructures. The review further highlights the ever-growing portfolio of applications of these chiral metasurfaces, including polarization conversion, information encryption, chiral sensing, and as an engineering platform for hybrid metadevices. Finally, forward-looking prospects are provided.

Modulation of the kinetics of outer-sphere electron transfer at graphene by a metal substrate

Solid-supported graphene is a typical configuration of electrochemical devices based on single-layer graphene. Therefore, it is necessary to understand the electrochemical features of such heterostructures. In this work, we theoretically investigated the effect of the metal type on the nonadiabatic electron transfer (ET) at the metal-supported graphene using DFT calculations. We considered five metals Au, Ag, Pt, Cu, and Al on which graphene is physically adsorbed. It is shown that all metals catalyze the ET. The electrocatalytic effect increases in the following series Al < Au ≲ Ag ≈ Cu < Pt. The enhanced ET in the presence of the metal substrate is explained by the hybridization of metal and graphene states, due to which the coupling between the reactant in an electrolyte and metal is increased. Metal-dependent electrocatalytic effect is explained both by different densities of states at the Fermi level of the systems and by differences in the behaviour of the tails of hybridized wave functions in the electrolyte region. The shift of the Fermi level with respect to the Dirac point in graphene when charging at the metal/graphene/electrolyte interface does not affect the kinetics due to the small contribution of graphene states to the electron transfer.

Voltammetric Mapping of Hydrogen Evolution Reaction on Pt Locally via Scanning Electrochemical Cell Microscopy

The advancement in nanoscale electrochemical tools has offered the opportunity to better understand heterogeneity at electrochemical interfaces. Scanning electrochemical cell microscopy (SECCM) has been increasingly used for revealing local kinetics and the distribution of active sites in electrocatalysis. Constant-contact scanning and hopping scanning are the two commonly used modes. The former is intrinsically faster, whereas the latter enables full voltammetry at individual locations. Herein, we revisit a less used mode that combines the advantages of hopping and constant-contact scan, resulting in a faster voltammetric mapping. In this mode, the nanodroplet cell in SECCM maintains contact with the surface during the scanning and makes intermittent pauses for local voltammetry. The elimination of frequent retraction and approach greatly increases the speed of mapping. In addition, iR correction can be readily applied to the voltammetry, resulting in more accurate measurements of the electrode kinetics. This scanning mode is demonstrated in the oxidation of a ferrocene derivative on HOPG and hydrogen evolution reaction (HER) on polycrystalline Pt, serving as model systems for outer-sphere and inner-sphere electron transfer reactions, respectively. While the kinetics of the inner-sphere reaction is consistent spatially, heterogeneity is observed for the kinetics of HER, which is correlated with the crystal orientation of Pt.