Room-temperature logic-in-memory operations in single-metallofullerene devices

Electrically Induced Crystal Field Distortion in a Ferroelectric Perovskite Revealed by Electron Paramagnetic Resonance

The magnetoelectric material has attracted multidisciplinary interest in the past decade for its potential to accommodate various functions. Especially, the external electric field can drive the quantum behaviors of such materials via the spin-electric coupling effect, with the advantages of high spatial resolution and low energy cost. In this work, the spin-electric coupling effect of Mn2+-doped ferroelectric organic-inorganic hybrid perovskite [(CH3)3NCH2Cl]CdCl3 with a large piezoelectric effect was investigated. The electric field manipulation efficiency for the allowed transitions was determined by the pulsed electron paramagnetic resonance. The orientation-included Hamiltonian of the spin-electric coupling effect was obtained via simulating the angle-dependent electric field modulated continuous-wave electron paramagnetic resonance. The results demonstrate that the applied electric field affects not only the principal values of the zero-field splitting tensor but also its principal axis directions. This work proposes and exemplifies a route to understand the spin-electric coupling effect originating from the crystal field imposed on a spin ion being modified by the applied electric field, which may guide the rational screening and designing of hybrid perovskite ferroelectrics that satisfy the efficiency requirement of electric field manipulation of spins in quantum information applications.

Interfacial Stereoelectronic Effect Induced by Anchoring Orientation

Heterogeneous interfaces in most devices play a key role in the material performance. Exploring the atomic structure and electronic properties of metal-molecule interfaces is critical for various potential applications, such as surface sensing, molecular recognition, and molecular electronic devices. This study unveils a ubiquitous interfacial stereoelectronic effect in conjugated molecular junctions by combining first-principles simulation and scanning tunneling microscopy break junction technology. Single-molecule junctions with same-side interfacial anchoring (cis configuration) exhibit higher conductance than those with opposite-side interfacial anchoring (trans configuration). The cis and trans configurations can undergo reversible conversions, resulting in a conductance switching. The stability of these configurations can be adjusted by an electric field, achieving precise regulation of conductance states. Our findings provide important insights for designing high-quality materials and enhancing the device performance.

Fully Reprogrammable 2D Array of Multistate Molecular Switching Units

Integration of molecular switching units into complex electronic circuits is considered to be the next step toward the realization of novel logic and memory devices. This paper reports on an ordered 2D network of neighboring ternary switching units represented by triazatruxene (TAT) molecules organized in a honeycomb lattice on a Ag(111) surface. Using low-temperature scanning tunneling microscopy, the bonding configurations of individual TAT molecules can be controlled, realizing up to 12 distinct states per molecule. The switching between those states shows a strong bias dependence ranging from tens of millivolts to volts. The low-bias switching behavior is explored in active units consisting of two and more interacting TAT molecules that are purposefully defined (programmed) by high-bias switching within the honeycomb lattice. Within such a unit the low-bias switching can be triggered and accessed by single-point measurements on a single TAT molecule, demonstrating up to 9 and 19 distinguishable states in a dyad and a tetrad of coupled molecules, respectively. High experimental control over the desired state, owing to bias-dependent hierarchical switching and pronounced switching directionality, as well as full reversibility, make this system particularly appealing, paving the way to design complex molecule-based memory systems.

Photon-Dipole-Spin Interactions in M(TCNE)x/P(VDF-TrFE) Multiferroic Heterostructure Available for Bimodal Control of Multistate Data-Storage

Organic multiferroic heterostructure is one of the most promising structures for the future design of high-density flexible energy-efficient data storage. Here, organic ferromagnetic metal(tetracyanoethylene) (M(TCNE))x/ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) multiferroic heterostructures are fabricated, where the excited state in M(TCNE)x interacted with localized dipole in P(VDF-TrFE) provides a key link for the interfacial coupling. Thus, aligned dipoles in P(VDF-TrFE) by external electric field can affect the magnetization of Fe(TCNE)x effectively to result in a pronounced magnetization-voltage (M-V) hysteresis loop. Moreover, light-induced electron-hole pairs in Fe(TCNE)x with long lifetime effectively interact with the dipoles in P(VDF-TrFE) to lead to an effect in external light control of electric polarization of P(VDF-TrFE). Overall, the organic multiferroic heterostructure provides the possibility of realizing two storage modes, light control of dipole as well as electric field control of spin, which can broaden multifunctional applications of organic multiferroic materials in the area of multistate storage.

Plasmon-Molecule Interactions in Single-Molecule Junctions

Single-molecule optoelectronics offers opportunities for advancing integrated photonics and electronics, which also serves as a tool to elucidate the underlying mechanism of light-matter interaction. Plasmonics, which plays pivotal role in the interaction of photons and matter, have became an emerging area. A comprehensive understanding of the plasmonic excitation and modulation mechanisms within single-molecule junctions (SMJs) lays the foundation for optoelectronic devices. Consequently, this review primarily concentrates on illuminating the fundamental principles of plasmonics within SMJs, delving into their research methods and modulation factors of plasmon-exciton. Moreover, we underscore the interaction phenomena within SMJs, including the enhancement of molecular fluorescence by plasmonics, Fano resonance and Rabi splitting caused by the interaction of plasmon-exciton. Finally, by emphasizing the potential applications of plasmonics within SMJs, such as their roles in optical tweezers, single-photon sources, super-resolution imaging, and chemical reactions, we elucidate the future prospects and current challenges in this domain.

Understanding Emergent Complexity from a Single-Molecule Perspective

Molecules, with structural, scaling, and interaction diversities, are crucial for the emergence of complex behaviors. Interactions are essential prerequisites for complex systems to exhibit emergent properties that surpass the sum of individual component characteristics. Tracing the origin of complex molecular behaviors from interactions is critical to understanding ensemble emergence, and requires insights at the single-molecule level. Electrical signals from single-molecule junctions enable the observation of individual molecular behaviors, as well as intramolecular and intermolecular interactions. This technique provides a foundation for bottom-up explorations of emergent complexity. This Perspective highlights investigations of various interactions via single-molecule junctions, including intramolecular orbital and weak intermolecular interactions and interactions in chemical reactions. It also provides potential directions for future single-molecule junctions in complex system research.

Electrode-Supported Endohedral Metallofullerenes: Insights into the Confined Internal Dynamics

Endohedral metallofullerenes show great promise as molecular-scale memory units due to their robust architecture and protective capability for encapsulated atoms. However, the flat potential-energy surface within the cage often results in a severe disorder of encapsulated atoms. Here, we focused on prototypical systems involving Li@C60 on metallic surfaces, emphasizing the electrode's confinement effect on caged dynamics. We demonstrated that the varying interfacial stabilities induced by Li motion predominantly depend on the synergetic effect of van der Waals forces and covalent bonds rather than the previously assumed electrostatic interactions. We unveiled that the repulsion effect between encapsulated atom and the metal electrode primarily arises from the antibonding states between the metal states below the Fermi level and the degenerated frontier orbitals from HOMO-4 to HOMO. By manipulating orbital interactions, we observed an ordered arrangement of the encapsulated atom on Rec-Pt(111) at room temperature. Furthermore, our findings underscore the disruptive influence of electric fields on the stability of distinct Li positions, a phenomenon closely tied to the dipole moment induced by Li motion. This research provides a new perspective on the confined internal dynamics of endohedral metallofullerenes by manipulating cage-electrode interactions, contributing to precisely controlled molecular electronics.

Two-dimensional fullerene-based monolayer materials assembled by C80 and Sc3N@C80

Construction of two-dimensional (2D) materials using fullerenes as building blocks has attracted particular attention, primarily due to their ability to integrate desired functionalities into devices. However, realization of stable 2D phases of polymerized fullerenes remains a big challenge. Here, we propose two stable 2D monolayer phases with covalently bridged C80 cages, namely α-C80-2D and β-C80-2D, which are semiconductors with strong absorption in the long wave range and appreciable carrier mobility, respectively. The high stability originates from the bond energy released by the [2+2] cycloaddition polymerization of C80 is greater than the deformation energy of a cage. Starting from α-C80-2D, endohedral incorporation of the Sc3N molecule into each C80 cage leads to 2D semiconductors of α-Sc3N@C80-2D and α'-Sc3N@C80-2D, which possess exceptional stability and diverse physical properties, including unique electronic band structures, strong optical absorption in the visible (VIS) to near-infrared (NIR) regime, and anisotropic optical characteristics. Remarkably, a temperature-induced order-disorder transition in the α-Sc3N@C80-2D phase has been observed at elevated temperatures above 600 K. These findings expand the family of 2D carbon materials and provide useful clue for the potential applications of fullerene-assembled monolayer networks.

Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8μ B to 5.1μ B for the ground-state GN at an electric field strength of 3 - 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

Ag-doped non-imperfection-enabled uniform memristive neuromorphic device based on van der Waals indium phosphorus sulfide

Memristors are considered promising energy-efficient artificial intelligence hardware, which can eliminate the von Neumann bottleneck by parallel in-memory computing. The common imperfection-enabled memristors are plagued with critical variability issues impeding their commercialization. Reported approaches to reduce the variability usually sacrifice other performances, e.g., small on/off ratios and high operation currents. Here, we demonstrate an unconventional Ag-doped nonimperfection diffusion channel-enabled memristor in van der Waals indium phosphorus sulfide, which can combine ultralow variabilities with desirable metrics. We achieve operation voltage, resistance, and on/off ratio variations down to 3.8, 2.3, and 6.9% at their extreme values of 0.2 V, 1011 ohms, and 108, respectively. Meanwhile, the operation current can be pushed from 1 nA to 1 pA at the scalability limit of 6 nm after Ag doping. Fourteen Boolean logic functions and convolutional image processing are successfully implemented by the memristors, manifesting the potential for logic-in-memory devices and efficient non-von Neumann accelerators.

Conductance Evolution of Photoisomeric Single-Molecule Junctions under Ultraviolet Irradiation and Mechanical Stretching

A comprehensive understanding of carrier transport in photoisomeric molecular junctions is crucial for the rational design and delicate fabrication of single-molecule functional devices. It has been widely recognized that the conductance of azobenzene (a class of photoisomeric molecules) based molecular junctions is mainly determined by photoinduced conformational changes. In this study, it is demonstrated that the most probable conductance of amine-anchored azobenzene-based molecular junctions increases continuously upon UV irradiation. In contrast, the conductance of pyridyl-anchored molecular junctions with an identical azobenzene core exhibits a contrasting trend, highlighting the pivotal role that anchoring groups play, potentially overriding (even reversing) the effects of photoinduced conformational changes. It is further demonstrated that the molecule with cis-conformation cannot be fully mechanically stretched into the trans-conformation, clarifying that it is a great challenge to realize a reversible molecular switch by purely mechanical operation. Additionally, it is revealed that the coupling strength of pyridyl-anchored molecules is dramatically weakened when the UV irradiation time is prolonged, whereas it is not observed for amine-anchored molecules. The mechanisms for these observations are elucidated with the assistance of density functional theory calculations and UV-Vis spectra combined with flicker noise measurements which confirm the photoinduced conformational changes, providing insight into understanding the charge transport in photoisomeric molecular junctions and offering a routine for logical designing synchro opto-mechanical molecular switches.

Ballistic Conductance through Porphyrin Nanoribbons

The search for long molecular wires that can transport charge with maximum efficiency over many nanometers has driven molecular electronics since its inception. Single-molecule conductance normally decays with length and is typically far below the theoretical limit of G0 (77.5 μS). Here, we measure the conductances of a family of edge-fused porphyrin ribbons (lengths 1-7 nm) that display remarkable behavior. The low-bias conductance is high across the whole series. Charging the molecules in situ results in a dramatic realignment of the frontier orbitals, increasing the conductance to 1 G0 (corresponding to a current of 20 μA). This behavior is most pronounced in the longer molecules due to their smaller HOMO-LUMO gaps. The conductance-voltage traces frequently exhibit peaks at zero bias, showing that a molecular energy level is in resonance with the Fermi level. This work lays the foundations for long, perfectly transmissive, molecular wires with technological potential.

Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes

The molecule-electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule and the conventional electrodes leads to/ the quenching effect and limits the reversibility of molecular photoswitches. In this work, we developed a strategy of using transition metal dichalcogenides (TMDCs) electrodes to fabricate the thiol azobenzene (TAB) self-assembled monolayers (SAMs) junctions with the eutectic gallium-indium (EGaIn) technique. The current-voltage characteristics of the EGaIn/GaOx //TAB/TMDCs photoswitches showed an almost 100% reversible photoswitching behavior, which increased by ∼28% compared to EGaIn/GaOx //TAB/AuTS photoswitches. Density functional theory (DFT) calculations showed the coupling strength of the TAB-TMDCs electrode decreased by 42% compared to that of the TAB-AuTS electrode, giving rise to improved reversibility. our work demonstrated the feasibility of 2D TMDCs for fabricating SAMs-based photoswitches with unprecedentedly high reversibility.

Bandgap Engineering of Erbium-Metallofullerenes toward Switchable Photoluminescence

Encapsulating photoluminescent lanthanide ions like erbium (Er) into fullerene cages affords photoluminescent endohedral metallofullerenes (EMFs). Few reported photoluminescent Er-EMFs are all based on encapsulation of multiple (two to three) metal atoms, whereas mono-Er-EMFs exemplified by Er@C82 are not photoluminescent due to its narrow optical bandgap. Herein, by entrapping an Er-cyanide cluster into various C82 cages to form novel Er-monometallic cyanide clusterfullerenes (CYCFs), ErCN@C82 (C2 (5), Cs (6), and C2 v (9)), the photoluminescent properties of CYCFs are investigated, and obvious near-infrared (NIR) photoluminescence only is observed for ErCN@C2 (5)-C82 . Combined with a comparative photoluminescence study of three medium-bandgap di-Er-EMFs, including Er2 @Cs (6)-C82 , Er2 O@Cs (6)-C82 , and Er2 C2 @Cs (6)-C82 , this study proposes that the optical bandgap can be used as a simple criterion for switching the photoluminescence of Er-EMFs, and the bandgap threshold is determined to be between 0.83 and 0.74 eV. Furthermore, the photoluminescent patterns of these three di-Er-EMFs differ dramatically. It is found that the location of the Er atom within the same Cs (6)-C82 cage is almost fixed and independent on the endo-unit; thus the previous statement on the key role of metal position in photoluminescence of di-Er-EMFs seems erroneous, and the geometric configuration of the endo-unit, especially the bridging mode of two Er ions, is decisive instead.

Microscopic theory, analysis, and interpretation of conductance histograms in molecular junctions

Molecular electronics break-junction experiments are widely used to investigate fundamental physics and chemistry at the nanoscale. Reproducibility in these experiments relies on measuring conductance on thousands of freshly formed molecular junctions, yielding a broad histogram of conductance events. Experiments typically focus on the most probable conductance, while the information content of the conductance histogram has remained unclear. Here we develop a microscopic theory for the conductance histogram by merging the theory of force-spectroscopy with molecular conductance. The procedure yields analytical equations that accurately fit the conductance histogram of a wide range of molecular junctions and augments the information content that can be extracted from them. Our formulation captures contributions to the conductance dispersion due to conductance changes during the mechanical elongation inherent to the experiments. In turn, the histogram shape is determined by the non-equilibrium stochastic features of junction rupture and formation. The microscopic parameters in the theory capture the junction's electromechanical properties and can be isolated from separate conductance and rupture force (or junction-lifetime) measurements. The predicted behavior can be used to test the range of validity of the theory, understand the conductance histograms, design molecular junction experiments with enhanced resolution and molecular devices with more reproducible conductance properties.

Discovery of Ferroelectricity in the Fullerene Adduct C60S8

Fullerenes offer versatile functionalities and are promising materials for a widespread range of applications from biomedicine and energy to electronics. Great efforts have been made to manipulate the symmetries of fullerene and its derivatives for studying material properties and novel effects, such as ferroelectricity with polar symmetry; however, no documentary report has been obtained to realize their ferroelectricity. Here, for the first time, we demonstrated clear ferroelectricity in a fullerene adduct formed by C60 and S8. More is different: the combination of the most symmetric molecule C60 with the highest Ih symmetry and molecule S8 with high D4d symmetry resulted in the polar C60S8 adduct with a low crystallographic symmetry of the C2v (mm2) point group at room temperature. The presented C60S8 undergoes polar-to-polar ferroelectric phase transition with the mm2Fm notation, whose ferroelectricity was confirmed by a ferroelectric hysteresis loop and ferroelectric domain switching. This finding opens up a new functionality for fullerenes and sheds light on the exploration of more ferroelectric fullerenes.

Reversible electric switching of NDI molecular wires by orthogonal stimuli

The charge transport of 1,4,5,8-naphthalene diimide (NDI)-based molecules is explored. Experimental results show that the conductance of the TH-NDI molecular junction can be reversibly tuned by bias voltage and solvent, while the conductance of the PH-NDI junction is almost independent of the bias voltage and solvent. Based on these orthogonal stimuli, an AND logic gate of TH-NDI junction with an electric signal as the output is constructed. These results will advance the development of functional molecular devices.

Extreme long-lifetime self-assembled monolayer for air-stable molecular junctions

The molecular electronic devices based on self-assembled monolayer (SAM) on metal surfaces demonstrate novel electronic functions for device minimization yet are unable to realize in practical applications, due to their instability against oxidation of the sulfur-metal bond. This paper describes an alternative to the thiolate anchoring group to form stable SAMs on gold by selenides anchoring group. Because of the formation of strong selenium-gold bonds, these stable SAMs allow us to incorporate them in molecular tunnel junctions to yield extremely stable junctions for over 200 days. A detailed structural characterization supported by spectroscopy and first-principles modeling shows that the oxidation process is much slower with the selenium-gold bond than the sulfur-gold bond, and the selenium-gold bond is strong enough to avoid bond breaking even when it is eventually oxidized. This proof of concept demonstrates that the extraordinarily stable SAMs derived from selenides are useful for long-lived molecular electronic devices and can possibly become important in many air-stable applications involving SAMs.

In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator.

Robust Sub-5 Nanometer bis(Diarylcarbene)-Based Thin Film for Molecular Electronics and Plasmonics

In miniaturized electronic and optoelectronic circuits, molecular tunnel junctions have attracted enormous research interest due to their small footprint, low power consumption, and rich molecular functions. However, the most popular building blocks used in contemporary molecular tunnel junctions are thiol molecules, which attach to electrode surfaces via a metal-thiolate (MS) bond, showing low stability and usually quick degradation within several days. To pave the way for more widely applicable and stable molecular tunnel junctions, there is a need to develop new molecular anchoring groups. Here, this work demonstrates robust and air-stable molecular tunnel junctions with a sub-5 nanometer bis(diarylcarbene)-based thin film as the tunneling barrier, which anchors to the electrode surface via a AuC bond. The bis(diarylcarbene)-based molecular tunnel junctions exhibit high thermal stability against heating up to 200 °C and long storage lifetime over 5 months in an ambient environment. Both electrical and optical performance of these bis(diarylcarbene)-based molecular junctions are characterized systematically, showing similar behaviors to thiol-based junctions as well as largely improved emission stability. This research highlights the excellent performance of bis(diarylcarbene)-based molecular tunnel junctions, which could be useful for applications in molecular electronics and plasmonics.

Structure and single-molecule conductance of two endohedral metallofullerenes with large C88 cage

Endohedral metallofullerenes are capable of holding peculiar metal clusters inside the carbon cage. Additionally, these display many chemical and physical properties originating from the complexation between the metal clusters and carbon cages, which could be acquired for wide applications. In this study, two metallofullerenes (Ce2O@C88 and Ce3N@C88) with an identical large C88-D2(35) cage, and their molecular structures and single-molecule conductance properties were investigated comparatively. Characterizations of UV-vis-NIR absorption spectroscopy, Raman spectroscopy, and DFT calculations were employed to determine the geometries and electronic structures of Ce2O@C88 and Ce3N@C88. These molecules revealed varied energy gaps, structural parameters, vibrational modes, and molecular frontier orbitals. Although the two metallofullerenes have an identical cage isomer of C88-D2(35), their different endohedral clusters can influence their structures and physicochemical properties. Furthermore, the single-molecule conductance properties were measured using the scanning tunneling microscopy break junction technique (STM-BJ). The experimental results revealed that Ce2O@C88 has a higher conductance than Ce3N@C88 and C60. This revealed the cluster-dependent electron transportation as well as the significant research value of metallofullerenes with large carbon cages. These results provide guidance for fabricating single-molecule electronic devices.

Two Metastable Endohedral Metallofullerenes Sc2C2@C1(39656)-C82 and Sc2C2@C1(51383)-C84: Direct-C2-Insertion Products from Their Most Stable Precursors

Endohedral metallofullerenes (EMFs) are sub-nano carbon materials with diverse applications, yet their formation mechanism, particularly for metastable isomers, remains ambiguous. The current theoretical methods focus mainly on the most stable isomers, leading to limited predictability of metastable ones due to their low stabilities and yields. Herein, we report the successful isolation and characterization of two metastable EMFs, Sc₂C₂@C₁(39656)-C₈₂ and Sc₂C₂@C₁(51383)-C₈₄, which violate the isolated pentagon rule (IPR). These two non-IPR EMFs exhibit a rare case of planar and pennant-like Sc₂C₂ clusters, which can be considered hybrids of the common butterfly-shaped and linear configurations. More importantly, the theoretical results reveal that despite being metastable, these two non-IPR EMFs survived as the products from their most stable precursors, Sc₂C₂@C_2v(5)-C₈₀ and Sc₂C₂@C_s(6)-C₈₂, via a C₂ insertion during the post-formation annealing stages. We propose a systematic theoretical method for predicting metastable EMFs during the post-formation stages. The unambiguous molecular-level structural evidence, combined with the theoretical calculation results, provides valuable insights into the formation mechanisms of EMFs, shedding light on the potential of post-formation mechanisms as a promising approach for EMF synthesis.

Research on Electric Field-Induced Catalysis Using Single-Molecule Electrical Measurement

The role of catalysis in controlling chemical reactions is crucial. As an important external stimulus regulatory tool, electric field (EF) catalysis enables further possibilities for chemical reaction regulation. To date, the regulation mechanism of electric fields and electrons on chemical reactions has been modeled. The electric field at the single-molecule electronic scale provides a powerful theoretical weapon to explore the dynamics of individual chemical reactions. The combination of electric fields and single-molecule electronic techniques not only uncovers new principles but also results in the regulation of chemical reactions at the single-molecule scale. This perspective focuses on the recent electric field-catalyzed, single-molecule chemical reactions and assembly, and highlights promising outlooks for future work in single-molecule catalysis.

Voltage-driven control of single-molecule keto-enol equilibrium in a two-terminal junction system

Keto-enol tautomerism, describing an equilibrium involving two tautomers with distinctive structures, provides a promising platform for modulating nanoscale charge transport. However, such equilibria are generally dominated by the keto form, while a high isomerization barrier limits the transformation to the enol form, suggesting a considerable challenge to control the tautomerism. Here, we achieve single-molecule control of a keto-enol equilibrium at room temperature by using a strategy that combines redox control and electric field modulation. Based on the control of charge injection in the single-molecule junction, we could access charged potential energy surfaces with opposite thermodynamic driving forces, i.e., exhibiting a preference for the conducting enol form, while the isomerization barrier is also significantly reduced. Thus, we could selectively obtain desired and stable tautomers, which leads to significant modulation of the single-molecule conductance. This work highlights the concept of single-molecule control of chemical reactions on more than one potential energy surface.

Stretch Evolution of Electronic Coupling of the Thiophenyl Anchoring Group with Gold in Mechanically Controllable Break Junctions

The current-voltage characteristics of a single-molecule junction are determined by the electronic coupling Γ between the electronic states of the electrodes and the dominant transport channel(s) of the molecule. Γ is profoundly affected by the choice of the anchoring groups and their binding positions on the tip facets and the tip-tip separation. In this work, mechanically controllable break junction experiments on the N,N'-bis(5-ethynylbenzenethiol-salicylidene)ethylenediamine are presented, in particular, the stretch evolution of Γ with increasing tip-tip separation. The stretch evolution of Γ is characterized by recurring local maxima and can be related to the deformation of the molecule and sliding of the anchoring groups above the tip facets and along the tip edges. A dynamic simulation approach is implemented to model the stretch evolution of Γ, which captures the experimentally observed features remarkably well and establishes a link to the microscopic structure of the single-molecule junction.

Generic dynamic molecular devices by quantitative non-steady-state proton/water-coupled electron transport kinetics

Dynamic molecular devices operating with time- and history-dependent performance raised new challenges for the fundamental study of microscopic non-steady-state charge transport as well as functionalities that are not achievable by steady-state devices. In this study, we reported a generic dynamic mode of molecular devices by addressing the transient redox state of ubiquitous quinone molecules in the junction by proton/water transfer. The diffusion limited slow proton/water transfer-modulated fast electron transport, leading to a non-steady-state transport process, as manifested by the negative differential resistance, dynamic hysteresis, and memory-like behavior. A quantitative paradigm for the study of the non-steady-state charge transport kinetics was further developed by combining the theoretical model and transient state characterization, and the principle of the dynamic device can be revealed by the numerical simulator. On applying pulse stimulation, the dynamic device emulated the neuron synaptic response with frequency-dependent depression and facilitation, implying a great potential for future nonlinear and brain-inspired devices.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

A quest for ideal electric field-driven MX@C70 endohedral fullerene memristors: which MX fits the best?

Endohedral fullerenes with a dipolar molecule enclosed in the fullerene cage have great potential in molecular electronics, such as diodes, switches, or molecular memristors. Here, we study a series of model systems based on MX@D_5h(1)-C₇₀ (M = a metal or hydrogen, X = a halogen or a chalcogen) endohedral fullerenes to identify potential molecular memristors and to derive a general formula for rapid identification of potential memristors among analogous MX@C_n systems. To obtain sufficiently accurate results for switching barriers and encapsulation energies, we perform a benchmark of ten DFT functionals against ab initio SCS-MP2 and DLPNO-CCSD(T) methods at the complete basis set limit. The whole series is then investigated using the PBE0 functional which was found to be the most efficient vs. the ab initio methods. Nine of the 34 MX@C₇₀ molecules studied are predicted to have suitable switching barriers to be considered as potential candidates for molecular switches and memristors. We have identified several structure-property relationships for the switching barrier and response of the systems to the electric field, in particular the dependence of the switching barrier on the available space for M-X switching and faster response of the system to the electric field with a larger dipole moment of MX and MX@C₇₀.

Switchable Polar Nanotexture in Nanolaminates HfO2 -ZrO2 for Ultrafast Logic-in-Memory Operations

Nontrivial topological polar textures in ferroelectric materials, including vortices, skyrmions, and others, have the potential to develop ultrafast, high-density, reliable multilevel memory storage and conceptually innovative processing units, even beyond the limit of binary storage of 180° aligned polar materials. However, the realization of switchable polar textures at room temperature in ferroelectric materials integrated directly into silicon using a straightforward large area fabrication technique and effectively utilizing it to design multilevel programable memory and processing units has not yet been demonstrated. Here, utilizing vector piezoresponse force and conductive atomic force microscopy, microscopic evidence of the electric field switchable polar nanotexture is provided at room temperature in HfO₂ -ZrO₂ nanolaminates grown directly onto silicon using an atomic layer deposition technique. Additionally, a two-terminal Au/nanolaminates/Si ferroelectric tunnel junction is designed, which shows ultrafast (≈83 ns) nonvolatile multilevel current switching with high on/off ratio (>10⁶ ), long-term durability (>4000 s), and giant tunnel electroresistance (10⁸ %). Furthermore, 14 Boolean logic operations are tested utilizing a single device as a proof-of-concept for reconfigurable logic-in-memory processing. The results offer a potential approach to "processing with polar textures" and addressing the challenges of developing high-performance multilevel in-memory processing technology by virtue of its fundamentally distinct mechanism of operation.

Electrical devices designed based on inorganic clusters

The idea of exploring the bottom brink of material science has been carried out for more than two decades. Clusters science is the frontmost study of all nanoscale structures. Being an example of 0-dimensional quantum dot, nanocluster serves as the bridge between atomic and conventionally understood solid-state physics. The forming mechanism of clusters is found to be the mutual effects of electronic and geometric configuration. It is found that electronic shell structure influences the properties and geometric structure of the cluster until its size becomes larger, where electronic effects submerge in geometric structure. The discrete electronic structures depend on the size and conformation of clusters, which can be controlled artificially for potential device applications. Especially, small clusters with a size of 1-2 nm, whose electronic states are possibly discrete enough to overcome thermal fluctuations, are expected to build a single-electron transistor with room temperature operation. However, exciting as the progress may be seen, cluster science still falls within the territory of merely the extension of atomic and molecular science. Its production rate limits the scientific and potential application research of nanoclusters. It is suggested in this review that the mass-produce ability without losing the atomic precision selectivity would be the milestone for nanoclusters to advance to material science.