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Yeom KM, Cho C, Jung EH, Kim G, Moon CS, Park SY, Kim SH, Woo MY, Khayyat MNT, Lee W, Jeon NJ, Anaya M, Stranks SD, Friend RH, Greenham NC, Noh JH. Quantum barriers engineering toward radiative and stable perovskite photovoltaic devices. Nat Commun 2024; 15:4547. [PMID: 38806514 PMCID: PMC11133308 DOI: 10.1038/s41467-024-48887-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/15/2024] [Indexed: 05/30/2024] Open
Abstract
Efficient photovoltaic devices must be efficient light emitters to reach the thermodynamic efficiency limit. Here, we present a promising prospect of perovskite photovoltaics as bright emitters by harnessing the significant benefits of photon recycling, which can be practically achieved by suppressing interfacial quenching. We have achieved radiative and stable perovskite photovoltaic devices by the design of a multiple quantum well structure with long (∼3 nm) organic spacers with oleylammonium molecules at perovskite top interfaces. Our L-site exchange process (L: barrier molecule cation) enables the formation of stable interfacial structures with moderate conductivity despite the thick barriers. Compared to popular short (∼1 nm) Ls, our approach results in enhanced radiation efficiency through the recursive process of photon recycling. This leads to the realization of radiative perovskite photovoltaics with both high photovoltaic efficiency (in-lab 26.0%, certified to 25.2%) and electroluminescence quantum efficiency (19.7 % at peak, 17.8% at 1-sun equivalent condition). Furthermore, the stable crystallinity of oleylammonium-based quantum wells enables our devices to maintain high efficiencies for over 1000 h of operation and >2 years of storage.
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Affiliation(s)
- Kyung Mun Yeom
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea
| | - Changsoon Cho
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea
- Institute for Convergence Research and Education in Advanced Technology, Yonsei University, Seoul, Republic of Korea
| | - Eui Hyuk Jung
- Department of Energy Engineering, Korea Institute of Energy Technology (KENTECH), 21 KENTECH-gil, Naju, Republic of Korea
| | - Geunjin Kim
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Chan Su Moon
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - So Yeon Park
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, USA
| | - Su Hyun Kim
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea
| | - Mun Young Woo
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea
| | | | - Wanhee Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea
| | - Nam Joong Jeon
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea
| | - Miguel Anaya
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
| | - Samuel D Stranks
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
| | - Richard H Friend
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK
| | - Neil C Greenham
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK.
| | - Jun Hong Noh
- School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Republic of Korea.
- Department of Integrative Energy Engineering, Korea University, Seoul, Republic of Korea.
- Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul, Republic of Korea.
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2
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Bowman AR, Rodríguez Echarri A, Kiani F, Iyikanat F, Tsoulos TV, Cox JD, Sundararaman R, García de Abajo FJ, Tagliabue G. Quantum-mechanical effects in photoluminescence from thin crystalline gold films. LIGHT, SCIENCE & APPLICATIONS 2024; 13:91. [PMID: 38637531 PMCID: PMC11026419 DOI: 10.1038/s41377-024-01408-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 02/01/2024] [Accepted: 02/06/2024] [Indexed: 04/20/2024]
Abstract
Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unraveling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-mechanical effects in the luminescence emanating from thin monocrystalline gold flakes. Specifically, we present experimental evidence, supported by first-principles simulations, to demonstrate its photoluminescence origin (i.e., radiative emission from electron/hole recombination) when exciting in the interband regime. Our model allows us to identify changes to the measured gold luminescence due to quantum-mechanical effects as the gold film thickness is reduced. Excitingly, such effects are observable in the luminescence signal from flakes up to 40 nm in thickness, associated with the out-of-plane discreteness of the electronic band structure near the Fermi level. We qualitatively reproduce the observations with first-principles modeling, thus establishing a unified description of luminescence in gold monocrystalline flakes and enabling its widespread application as a probe of carrier dynamics and light-matter interactions in this material. Our study paves the way for future explorations of hot carriers and charge-transfer dynamics in a multitude of material systems.
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Affiliation(s)
- Alan R Bowman
- Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Alvaro Rodríguez Echarri
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Spain
- MBI-Max-Born-Institut, Berlin, Germany
| | - Fatemeh Kiani
- Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Fadil Iyikanat
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Spain
| | - Ted V Tsoulos
- Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Joel D Cox
- POLIMA-Center for Polariton-driven Light-Matter Interactions, University of Southern Denmark, Odense M, Denmark
- Danish Institute for Advanced Study, University of Southern Denmark, Odense M, Denmark
| | - Ravishankar Sundararaman
- Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain
| | - Giulia Tagliabue
- Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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Shi P, Xu J, Yavuz I, Huang T, Tan S, Zhao K, Zhang X, Tian Y, Wang S, Fan W, Li Y, Jin D, Yu X, Wang C, Gao X, Chen Z, Shi E, Chen X, Yang D, Xue J, Yang Y, Wang R. Strain regulates the photovoltaic performance of thick-film perovskites. Nat Commun 2024; 15:2579. [PMID: 38519495 PMCID: PMC10960009 DOI: 10.1038/s41467-024-47019-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 03/17/2024] [Indexed: 03/25/2024] Open
Abstract
Perovskite photovoltaics, typically based on a solution-processed perovskite layer with a film thickness of a few hundred nanometres, have emerged as a leading thin-film photovoltaic technology. Nevertheless, many critical issues pose challenges to its commercialization progress, including industrial compatibility, stability, scalability and reliability. A thicker perovskite film on a scale of micrometres could mitigate these issues. However, the efficiencies of thick-film perovskite cells lag behind those with nanometre film thickness. With the mechanism remaining elusive, the community has long been under the impression that the limiting factor lies in the short carrier lifetime as a result of defects. Here, by constructing a perovskite system with extraordinarily long carrier lifetime, we rule out the restrictions of carrier lifetime on the device performance. Through this, we unveil the critical role of the ignored lattice strain in thick films. Our results provide insights into the factors limiting the performance of thick-film perovskite devices.
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Affiliation(s)
- Pengju Shi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Jiazhe Xu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Ilhan Yavuz
- Department of Physics, Marmara University, Ziverbey, Istanbul, 34722, Turkey
| | - Tianyi Huang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Shaun Tan
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Ke Zhao
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Xu Zhang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Yuan Tian
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Sisi Wang
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Wei Fan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Yahui Li
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Donger Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xuemeng Yu
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Chenyue Wang
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China
| | - Zhong Chen
- Instrumentation and Service Center for Molecular Sciences, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
| | - Enzheng Shi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xihan Chen
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jingjing Xue
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- Shangyu Institute of Semiconductor Materials, Shaoxing, 312300, China.
| | - Yang Yang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
| | - Rui Wang
- Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
- Division of Solar Energy Conversion and Catalysis at Westlake University, Zhejiang Baima Lake Laboratory Co., Ltd, Hangzhou, China.
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4
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Wang H, Zheng Y, Zhang G, Wang P, Sui X, Yuan H, Shi Y, Zhang G, Ding G, Li Y, Li T, Yang S, Shao Y. In Situ Dual-Interface Passivation Strategy Enables The Efficiency of Formamidinium Perovskite Solar Cells Over 25. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307855. [PMID: 37897435 DOI: 10.1002/adma.202307855] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Revised: 10/23/2023] [Indexed: 10/30/2023]
Abstract
Perovskite solar cells (PSCs) are promising candidates for next-generation photovoltaics owing to their unparalleled power conversion efficiencies (PCEs). Currently, approaches to further improve device efficiencies tend to focus on the passivation of interfacial defects. Although various strategies have been developed to mitigate these defects, many involve complex and time-consuming post-treatment processes, thereby hindering their widespread adoption in commercial applications. In this work, a concise but efficient in situ dual-interface passivation strategy is developed wherein 1-butyl-3-methylimidazolium methanesulfonate (MS) is employed as a precursor additive. During perovskite crystallization, MS can either be enriched downward through precipitation with SnO2 , or can be aggregated upward through lattice extrusion. These self-assembled MS species play a significant role in passivating the defect interfaces, thereby reducing nonradiative recombination losses, and promoting more efficient charge extraction. As a result, a PCE >25% (certified PCE of 24.84%) is achieved with substantially improved long-term storage and photothermal stabilities. This strategy provides valuable insights into interfacial passivation and holds promise for the industrialization of PSCs.
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Affiliation(s)
- Haonan Wang
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 201100, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yifan Zheng
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Guodong Zhang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Pengxiang Wang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Xinyuan Sui
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 201100, P. R. China
| | - Haiyang Yuan
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 201100, P. R. China
| | - Yifeng Shi
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Ge Zhang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Guoyu Ding
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yan Li
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Tao Li
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Shuang Yang
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 201100, P. R. China
| | - Yuchuan Shao
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
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5
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Pan J, Chen Z, Zhang T, Hu B, Ning H, Meng Z, Su Z, Nodari D, Xu W, Min G, Chen M, Liu X, Gasparini N, Haque SA, Barnes PRF, Gao F, Bakulin AA. Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy. Nat Commun 2023; 14:8000. [PMID: 38044384 PMCID: PMC10694143 DOI: 10.1038/s41467-023-43852-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 11/21/2023] [Indexed: 12/05/2023] Open
Abstract
Conventional spectroscopies are not sufficiently selective to comprehensively understand the behaviour of trapped carriers in perovskite solar cells, particularly under their working conditions. Here we use infrared optical activation spectroscopy (i.e., pump-push-photocurrent), to observe the properties and real-time dynamics of trapped carriers within operando perovskite solar cells. We compare behaviour differences of trapped holes in pristine and surface-passivated FA0.99Cs0.01PbI3 devices using a combination of quasi-steady-state and nanosecond time-resolved pump-push-photocurrent, as well as kinetic and drift-diffusion models. We find a two-step trap-filling process: the rapid filling (~10 ns) of low-density traps in the bulk of perovskite, followed by the slower filling (~100 ns) of high-density traps at the perovskite/hole transport material interface. Surface passivation by n-octylammonium iodide dramatically reduces the number of trap states (~50 times), improving the device performance substantially. Moreover, the activation energy (~280 meV) of the dominant hole traps remains similar with and without surface passivation.
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Affiliation(s)
- Jiaxin Pan
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Ziming Chen
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK.
| | - Tiankai Zhang
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Beier Hu
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Haoqing Ning
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Zhu Meng
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Ziyu Su
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Davide Nodari
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Weidong Xu
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Ganghong Min
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Mengyun Chen
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Xianjie Liu
- Laboratory of Organic Electronics, ITN, Linköping University, Norrköping, SE-60174, Sweden
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Saif A Haque
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
| | - Piers R F Barnes
- Department of Physics, Imperial College London, London, SW7 2AZ, UK
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processible Electronics, Imperial College London, London, W12 0BZ, UK
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6
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Song Q, Li Y, Lin Z, Xu X, Dong H, Duan H, Guan L, Gao X, Ai XC, Mu C. High-Fill-Factor Perovskite Solar Cells via Pseudohalide Salt Modification of the Substrate to Mitigate Nonradiative Recombination at the Interface. J Phys Chem Lett 2023; 14:9951-9959. [PMID: 37905503 DOI: 10.1021/acs.jpclett.3c02633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The utilization of the sol-gel method for fabricating planar SnO2 as the electron transport layer (ETL) induces numerous defects on the SnO2 layer surface and perovskite film bottom, causing considerable deterioration of the device performance. Conventional inorganic salt-doped SnO2 precursor solutions used for passivation may cause incomplete substrate coverage due to the presence of inorganic salt crystals, further degrading the device performance. Here, a substrate modification approach involving the pretreatment of a fluorine-doped SnO2 (FTO) substrate with NH4PF6 is proposed. The interaction between PF6- ions and the FTO substrate enhances SnO2 film quality; excess PF6- ions decrease the number of defects on the film surface. NH4+ ions react with an -OH stabilizing agent in the SnO2 solution and are eliminated during annealing. The combined effects suppress nonradiative recombination and ion migration at the ETL-perovskite interface. The corresponding high-quality perovskite solar cells (PSCs) exhibit a fill factor of ∼0.825; PSC efficiency increases from 19.59% to 22.32%.
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Affiliation(s)
- Qili Song
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Yiyi Li
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Zhichao Lin
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Xiangning Xu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Hongye Dong
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Hairui Duan
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Li Guan
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Xiaowen Gao
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Xi-Cheng Ai
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Cheng Mu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
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7
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Ruth A, Kuno M. Modeling the Photoelectrochemical Evolution of Lead-Based, Mixed-Halide Perovskites Due to Photosegregation. ACS NANO 2023; 17:20502-20511. [PMID: 37815981 DOI: 10.1021/acsnano.3c07165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2023]
Abstract
Lead-based, mixed-halide perovskites such as methylammonium lead iodide-bromide [MAPb(I1-xBrx)3] undergo anion photosegregation under illumination. This is observed as low-band-gap photoluminescence from photogenerated iodine-rich domains due to favorable band offsets that induce carrier funneling into them. Unfortunately, theoretical rationalizations of mixed-halide photosegregation are complicated by biases inherent in photoluminescence-based observations. Recent compositionally weighted X-ray diffraction (XRD) measurements now reveal broad distributions of photosegregated stoichiometries not captured by existing photosegregation models. To better bridge experiment and theory, we perform kinetic Monte Carlo (KMC) simulations of photosegregation within the context of a band-gap-based thermodynamic model, which has previously accounted for numerous experimental observations. Our KMC simulations are modified to consider high carrier density Fermi-Dirac statistics that result from carrier funneling and accumulation within photosegregated I-rich domains. Obtained KMC results reproduce broad terminal halide (xterminal) distributions seen experimentally and illustrate how they are characterized by a central, heavily I-enriched stoichiometry. I-rich domain "drifting" during photosegregation rationalizes the long photosegregation time scales seen experimentally with drifting simultaneously, producing a wake of variable stoichiometry I-rich inclusions that form the lion's share of stoichiometric heterogeneities seen in compositionally weighted XRD measurements. These simulations and accompanying rationalizations further reveal a general criterion for realizing favorable free energies to induce demixing. Central to the criterion is the statistical occupation of low gap inclusions in the parent alloy by excitations. The resulting model thus provides a general framework for conceptualizing mixed-halide perovskite light and temperature sensitivities mediated by photocarriers.
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Affiliation(s)
- Anthony Ruth
- University of Notre Dame, Department of Physics and Astronomy, Notre Dame, Indiana 46556, United States
| | - Masaru Kuno
- University of Notre Dame, Department of Physics and Astronomy, Notre Dame, Indiana 46556, United States
- University of Notre Dame, Department of Chemistry and Biochemistry and Department of Physics and Astronomy, Notre Dame, Indiana 46556, United States
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8
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Krückemeier L, Liu Z, Kirchartz T, Rau U. Quantifying Charge Extraction and Recombination Using the Rise and Decay of the Transient Photovoltage of Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300872. [PMID: 37147880 DOI: 10.1002/adma.202300872] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 04/16/2023] [Indexed: 05/07/2023]
Abstract
The extraction of photogenerated charge carriers and the generation of a photovoltage belong to the fundamental functionalities of any solar cell. These processes happen not instantaneously but rather come with finite time constants, e.g., a time constant related to the rise of the externally measured open circuit voltage following a short light pulse. Herein, a new method to analyze transient photovoltage measurements at different bias light intensities combining rise and decay times of the photovoltage. The approach uses a linearized version of a system of two coupled differential equations that are solved analytically by determining the eigenvalues of a 2 × 2 matrix. By comparison between the eigenvalues and the measured rise and decay times during a transient photovoltage measurement, the rates of carrier recombination and extraction as a function of bias voltage are determined, and establish a simple link between their ratio and the efficiency losses in the perovskite solar cell.
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Affiliation(s)
- Lisa Krückemeier
- IEK5-Photovoltaik, Forschungszentrum Jülich, 52425, Jülich, Germany
- Jülich Aachen Research Alliance, JARA-Energy and Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Schinkelstr. 2, 52062, Aachen, Germany
| | - Zhifa Liu
- IEK5-Photovoltaik, Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Thomas Kirchartz
- IEK5-Photovoltaik, Forschungszentrum Jülich, 52425, Jülich, Germany
- Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, 47057, Duisburg, Germany
| | - Uwe Rau
- IEK5-Photovoltaik, Forschungszentrum Jülich, 52425, Jülich, Germany
- Jülich Aachen Research Alliance, JARA-Energy and Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Schinkelstr. 2, 52062, Aachen, Germany
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9
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Jiang LL, Chen MM, Tang XD, Tang Y, Li SJ, Li Y, Li HH, Liu HR. Reduced electron relaxation time of perovskite films via g-C 3N 4 quantum dot doping for high-performance perovskite solar cells. RSC Adv 2023; 13:16935-16942. [PMID: 37288376 PMCID: PMC10242296 DOI: 10.1039/d3ra02391e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Accepted: 05/25/2023] [Indexed: 06/09/2023] Open
Abstract
Perovskite film-quality is a crucial factor to improve the photovoltaic properties of perovskite solar cells, which is closely related to the morphology of crystallization grain size of the perovskite layer. However, defects and trap sites are inevitably generated on the surface and at the grain boundaries of the perovskite layer. Here, we report a convenient method for preparing dense and uniform perovskite films, employing g-C3N4 quantum dots doped into the perovskite layer by regulating proper proportions. This process produces perovskite films with dense microstructures and flat surfaces. As a result, the higher fill factor (0.78) and a power conversion efficiency of 20.02% are obtained by the defect passivation of g-C3N4QDs.
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Affiliation(s)
- Lu-Lu Jiang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Meng-Meng Chen
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Xiao-Dan Tang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Ying Tang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Shao-Jie Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Ying Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Hang-Hui Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Hai-Rui Liu
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
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10
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Kirchartz T. Picturing charge carrier diffusion. NATURE MATERIALS 2022; 21:1344-1345. [PMID: 36396959 DOI: 10.1038/s41563-022-01389-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Affiliation(s)
- Thomas Kirchartz
- IEK5-Photovoltaik, Forschungszentrum Jülich, Jülich, Germany.
- Faculty of Engineering and CENIDE, University of Duisburg-Essen, Duisburg, Germany.
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