Designing spin and orbital sources of Berry curvature at oxide interfaces

Dirac-Like Fermions Anomalous Magneto-Transport in a Spin-Polarized Oxide 2D Electron System

In a 2D electron system (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, epitaxial engineering is used to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interfaces between LaAlO3, EuTiO3, and SrTiO3 insulators. The 2DES displays anomalous quantum corrections to the magneto-conductance driven by the time-reversal-symmetry breaking occurring below the magnetic transition temperature. The results are explained by the emergence of a non-trivial Berry phase and competing weak anti-localization/weak localization back-scattering of Dirac-like fermions, mimicking the phenomenology of gapped topological insulators. These findings open perspectives for the engineering of novel spin-polarized functional 2DES holding promises in spin-orbitronics and topological electronics.

In-Plane Anomalous Hall Effect Associated with Orbital Magnetization: Measurements of Low-Carrier Density Films of a Magnetic Weyl Semimetal

For over a century, the Hall effect, a transverse effect under an out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even an in-plane magnetic field can induce an anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here, we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd_{2}Sb_{2}. Anomalous Hall resistance exhibits distinct threefold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by the in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of the in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field-induced phenomena.

Quantum Rectification Based on Room Temperature Multidirectional Nonlinearity in Bi2Te3

Recent interest in quantum nonlinearity has spurred the development of rectifiers for harvesting energy from ambient radiofrequency waves. However, these rectifiers face efficiency and bandwidth limitations at room temperature. We address these challenges by exploring Bi2Te3, a time-reversal symmetric topological quantum material. Bi2Te3 exhibits robust room temperature second-order voltage generation in both the longitudinal and transverse directions. We harness these coexisting nonlinearities to design a multidirectional quantum rectifier that can simultaneously extract energy from various components of an input signal. We demonstrate the efficacy of Bi2Te3-based rectifiers across a broad frequency range, spanning from existing Wi-Fi bands (2.45 GHz) to frequencies relevant to next-generation 5G technology (27.4 GHz). Our Bi2Te3-based rectifier surpasses previous limitations by achieving a high rectification efficiency and operational frequency, alongside a low operational threshold and broadband functionality. These findings enable practical topological quantum rectifiers for high-frequency electronics and energy conversion, advancing wireless energy harvesting for next-generation communication.

Momentum-space spin texture induced by strain gradient in nominally centrosymmetric SrIrO3 films

Spin texture in k-space is a consequence of spin splitting due to strong spin-orbit coupling and inversion symmetry breaking. It underlies fertile spin transport phenomena and is of crucial importance for spintronics. Here, we observe the spin texture in k-space of nominally centrosymmetric SrIrO3 grown on NdGaO3 (110) substrates, using non-linear magnetotransport measurements. We demonstrate that the spin texture is not only induced by the interface, which inherently breaks the inversion symmetry in strong spin-orbit coupled SrIrO3 films, but also originates from the film bulk. Structural analysis reveals that thicker SrIrO3 films exhibit a strain gradient, which could be considered as a continuous change in the lattice constant across different layers and breaks the inversion symmetry throughout the entire SrIrO3 films, giving rise to the spin texture in k-space. First-principles calculations reveal that the strain gradient creates large spin-splitting bands, inducing the spin texture with anisotropy, which is consistent with our experimental observations. Our results offer an efficient method for inducing the spin textures in k-space.

Berry curvature signatures in chiroptical excitonic transitions

The topology of the electronic band structure of solids can be described by its Berry curvature distribution across the Brillouin zone. We theoretically introduce and experimentally demonstrate a general methodology based on the measurement of energy- and momentum-resolved optical transition rates, allowing to reveal signatures of Berry curvature texture in reciprocal space. By performing time- and angle-resolved photoemission spectroscopy of atomically thin WSe2 using polarization-modulated excitations, we demonstrate that excitons become an asset in extracting the quantum geometrical properties of solids. We also investigate the resilience of our measurement protocol against ultrafast scattering processes following direct chiroptical transitions.

Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators

Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO_{3} Mott, and large band gap KTaO_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO_{3} and LaTiO_{3} which, due to a small gap in the LaTiO_{3} results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO_{3}/KTaO_{3} (110) where the "polar" arguments are not applicable and on the emergence of superconductivity in these structures.

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1 T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.

Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) LaTiO_{3}/SrTiO_{3} Interface

Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce nonlinear transport effects (V∼I^{2}). Here, we focus on such effects to study the role of SOI in the (111) LaTiO_{3}/SrTiO_{3} interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall response through the entire gate-voltage range studied. We report a pronounced rise in the nonlinear longitudinal resistance at a critical in-plane field H_{cr}. This rise disappears when a small out-of-plane field component is present. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi contour, and consequently changes the symmetry of the Fermi contours and intensifies the nonlinear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the nonlinear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario.

Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice

Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.

Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor

Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time-reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2 , a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3μ Ω c m $\mu \Omega \, \textnormal {cm}$ is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c-axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p-type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2 . The results open the possibility to study the interplay of magnetic and ferroelectric-like responses in this fascinating class of materials.

Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO3 Based Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.

Symmetry dictionary on charge and spin nonlinear responses for all magnetic point groups with nontrivial topological nature

Recently, charge or spin nonlinear transport with nontrivial topological properties in crystal materials has attracted much attention. In this paper, we perform a comprehensive symmetry analysis for all 122 magnetic point groups (MPGs) and provide a useful dictionary for charge and spin nonlinear transport from the Berry curvature dipole, Berry connection polarizability and Drude term with nontrivial topological nature. The results are obtained by conducting a full symmetry investigation of the matrix representations of six nonlinear response tensors. We further identify every MPG that can accommodate two or three of the nonlinear tensors. The present work gives a solid theoretical basis for an overall understanding of the second-order nonlinear responses in realistic materials.