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Song Q, Zhang Y, Chen Q, Wu S, Yan X, He K, Gao G, Chen Q, Wang S. Site-Selective Synthesis of Bilayer Graphene on Cu Substrates Using Titanium as a Carbon Diffusion Barrier. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38355-38364. [PMID: 39011562 DOI: 10.1021/acsami.4c04521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
Chemical vapor deposition (CVD) is a widely used method for graphene synthesis, but it struggles to produce large-area uniform bilayer graphene (BLG). This study introduces a novel approach to meet the demands of large-scale integrated circuit applications, challenging the conventional reliance on uniform BLG over extensive areas. We developed a unique method involving the direct growth of bilayer graphene arrays (BLGA) on Cu foil substrates using patterned titanium (Ti) as a diffusion barrier. The use of the Ti layer can effectively control carbon atom diffusion through the Cu foil without altering the growth conditions or compromising the graphene quality, thereby showcasing its versatility. The approach allows for targeted BLG growth and achieved a yield of 100% for a 10 × 10 BLG units array. Then a 10 × 10 BLG memristor array was fabricated, and a yield of 96% was achieved. The performances of these devices show good uniformity, evidenced by the set voltages concentrated around 4 V, and a high resistance state (HRS) to low resistance state (LRS) ratio predominantly around 107, reflecting the spatial uniformity of the prepared BLGA. This study provides insight into the BLG growth mechanism and opens new possibilities for BLG-based electronics.
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Affiliation(s)
- Qiyang Song
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Youwei Zhang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, China
| | - Qiao Chen
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Su Wu
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xin Yan
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Kai He
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Guilong Gao
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Qiao Chen
- Gemmological Institute, China University of Geosciences, Wuhan 430074, China
| | - Shun Wang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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2
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Liu Y, Yang Y, Cheng W, Ma Z, Gao N, Li H. Defective Diamane: A Superior Sensor for Toxic Gases Capture and Detection with Excellent Selectivity, Sensitivity, and Reversibility at Room Temperature. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:14623-14632. [PMID: 38966998 DOI: 10.1021/acs.langmuir.4c01550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
The toxic gases emitted from industrial production have caused significant damage to the environment and human health, necessitating efficient gas sensors for their detection and removal. In this work, first-principles calculations are employed to investigate the potential application of diamanes for high-performance toxic gas sensors. The results show that nine gas molecules (CO, CO2, NO, NO2, NH3, SO2, N2, O2, and H2O) are physisorbed on pristine diamane by weak van der Waals interactions. After introducing H/F defects, diamane can effectively capture specific toxic gases (CO, NO, NO2, and SO2) in the presence of interfering gases (N2, O2, and H2O), suggesting excellent selectivity and anti-interference ability. Orbital hybridization and significant charge redistribution between gas molecules and defective diamane dominate the enhanced adsorbate-substrate interactions. More importantly, the high sensitivity and good reversibility of defective diamane for detecting CO, NO, and SO2 molecules enable its reuse as a superior resistance-type gas sensor. Our calculations provide valuable insights into the potential of defective diamane for detecting toxic gases and shed light on the practical application of novel carbon-based materials in the gas-sensing field.
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Affiliation(s)
- Yaning Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Yuhan Yang
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Wei Cheng
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Ziyao Ma
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Nan Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Hongdong Li
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
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3
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Rejhon M, Dědič V, Shestopalov M, Kunc J, Riedo E. Impact of metastable graphene-diamond coatings on the fracture toughness of silicon carbide. NANOSCALE 2024; 16:10590-10596. [PMID: 38501162 DOI: 10.1039/d3nr06281c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Silicon carbide has excellent mechanical properties such as high hardness and strength, but its applications for body armor and protective coating solutions are limited by its poor toughness. It has been demonstrated that epitaxial graphene-coated SiC can enhance SiC mechanical properties due to the pressure-activated phase transition into a sp3 diamond structure. Here, we show that atomically thin graphene coatings increase the hardness of SiC even for indentation depths of ∼10 μm. Very importantly, the graphene coating also causes an increase of the fracture toughness by 11% compared to bare SiC, which is in contradiction with the general indirect variation of hardness and fracture toughness. This is explained in terms of the presence of a diamond phase under the indenter while the rest of the coating remains in the ultra-tough graphene phase. This study opens new venues for understanding hardness and toughness in metastable systems and for the applications of graphene-coatings.
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Affiliation(s)
- Martin Rejhon
- Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
| | - Václav Dědič
- Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
| | - Mykhailo Shestopalov
- Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
| | - Jan Kunc
- Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
| | - Elisa Riedo
- Tandon School of Engineering, New York University, Brooklyn, NY, 11201, USA.
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4
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Khan RM, Rejhon M, Li Y, Parashar N, Riedo E, Wixom RR, DelRio FW, Dingreville R. Probing the Mechanical Properties of 2D Materials via Atomic-Force-Microscopy-Based Modulated Nanoindentation. SMALL METHODS 2024; 8:e2301043. [PMID: 38009526 DOI: 10.1002/smtd.202301043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 10/06/2023] [Indexed: 11/29/2023]
Abstract
As the field of low-dimensional materials (1D or 2D) grows and more complex and intriguing structures are continuing to be found, there is an emerging need for techniques to characterize the nanoscale mechanical properties of all kinds of 1D/2D materials, in particular in their most practical state: sitting on an underlying substrate. While traditional nanoindentation techniques cannot accurately determine the transverse Young's modulus at the necessary scale without large indentations depths and effects to and from the substrate, herein an atomic-force-microscopy-based modulated nanomechanical measurement technique with Angstrom-level resolution (MoNI/ÅI) is presented. This technique enables non-destructive measurements of the out-of-plane elasticity of ultra-thin materials with resolution sufficient to eliminate any contributions from the substrate. This method is used to elucidate the multi-layer stiffness dependence of graphene deposited via chemical vapor deposition and discover a peak transverse modulus in two-layer graphene. While MoNI/ÅI has been used toward great findings in the recent past, here all aspects of the implementation of the technique as well as the unique challenges in performing measurements at such small resolutions are encompassed.
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Affiliation(s)
- Ryan M Khan
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87185, USA
| | - Martin Rejhon
- Faculty of Mathematics and Physics, Charles University, Prague, 121 16, Czech Republic
| | - Yanxiao Li
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, 11201, USA
| | - Nitika Parashar
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, 11201, USA
| | - Elisa Riedo
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, 11201, USA
| | - Ryan R Wixom
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87185, USA
| | - Frank W DelRio
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87185, USA
- Department of Materials Mechanics and Tribology, Sandia National Laboratories, Albuquerque, NM, 87185, USA
| | - Rémi Dingreville
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87185, USA
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5
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Baimova JA. An Overview of Mechanical Properties of Diamond-like Phases under Tension. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:129. [PMID: 38251094 PMCID: PMC11154248 DOI: 10.3390/nano14020129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 12/28/2023] [Accepted: 01/02/2024] [Indexed: 01/23/2024]
Abstract
Diamond-like phases are materials with crystal lattices very similar to diamond. Recent results suggest that diamond-like phases are superhard and superstrong materials that can be used for tribological applications or as protective coatings. In this work, 14 stable diamond-like phases based on fullerenes, carbon nanotubes, and graphene layers are studied via molecular dynamics simulation. The compliance constants, Young's modulus, and Poisson's ratio were calculated. Deformation behavior under tension is analyzed based on two deformation modes-bond rotation and bond elongation. The results show that some of the considered phases possess very high Young's modulus (E≥1) TPa, even higher than that of diamond. Both Young's modulus and Poisson's ratio exhibit mechanical anisotropy. Half of the studied phases are partial auxetics possessing negative Poisson's ratio with a minimum value of -0.8. The obtained critical values of applied tensile strain confirmed that diamond-like phases are high-strength structures with a promising application prospect. Interestingly, the critical limit is not a fracture but a phase transformation to the short-ordered crystal lattice. Overall, our results suggest that diamond-like phases have extraordinary mechanical properties, making them good materials for protective coatings.
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Affiliation(s)
- Julia A. Baimova
- Institute for Metals Superplasticity Problems, Russian Academy of Sciences, 450001 Ufa, Russia;
- The World-Class Advanced Digital Technologies Research Center, Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia
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6
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Xie T, Ma X, Guo Y, Yuan G, Liao J, Ma N, Huang C. A graphene/Janus B 2P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field. Phys Chem Chem Phys 2023; 25:31238-31248. [PMID: 37955158 DOI: 10.1039/d3cp03732k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Lowering the Schottky barrier at the metal-semiconductor interface remains a stern challenge in the field of field-effect transistors. Herein, an in-depth investigation was conducted to explore the formation mechanism of the Schottky barrier via interlayer distance and external electric field, utilizing the first-principles approach. Attributed to the vertical asymmetric structure of B2P6, ohmic contact forms at the interface of a graphene/B2P6(001) heterostructure, and an n-type Schottky contact with a Schottky barrier of 0.51 eV forms at the interface of a graphene/B2P6(001̄) heterostructure. Furthermore, the Schottky barrier height and the contact type can be changed by adjusting the interlayer spacing or applying an electric field along the Z direction. A high carrier concentration of 4.65 × 1013 cm-2 is obtained in the graphene/B2P6(001) heterostructure when an external electric field of 0.05 V Å-1 is applied. Verifiably, alterations in the energy band structure are attributed to the redistribution of charges at the interface. The new findings indicate that GR/B2P6 heterostructures are a key candidate for next-generation Schottky field-effect transistor development.
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Affiliation(s)
- Tian Xie
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Xinguo Ma
- School of Science, Hubei University of Technology, Wuhan 430068, China.
- 111 Research Center, Hubei University of Technology, Wuhan 430068, China.
| | - Youyou Guo
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Gang Yuan
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - JiaJun Liao
- School of Science, Hubei University of Technology, Wuhan 430068, China.
| | - Nan Ma
- Key Laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, Shanghai 201899, China
| | - Chuyun Huang
- 111 Research Center, Hubei University of Technology, Wuhan 430068, China.
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7
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Emelin EV, Cho HD, Korepanov VI, Varlamova LA, Klimchuk DO, Erohin SV, Larionov KV, Kim DY, Sorokin PB, Panin GN. Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La 3Ga 5SiO 14 Substrate Using Electron Beam Irradiation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2978. [PMID: 37999332 PMCID: PMC10674167 DOI: 10.3390/nano13222978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 11/08/2023] [Accepted: 11/13/2023] [Indexed: 11/25/2023]
Abstract
Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migration of hydrogen ions and/or oxygen-related groups located on one or both sides of the nanostructure can occur. This process leads to the disruption of sp3 carbon bonds, restoring the high conductivity of bigraphene.
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Affiliation(s)
- Evgeny V. Emelin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia; (E.V.E.); (V.I.K.)
| | - Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (H.D.C.)
| | - Vitaly I. Korepanov
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia; (E.V.E.); (V.I.K.)
| | - Liubov A. Varlamova
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia; (L.A.V.); (S.V.E.)
| | - Darya O. Klimchuk
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia; (L.A.V.); (S.V.E.)
- Physical Chemistry Department, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Sergey V. Erohin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia; (L.A.V.); (S.V.E.)
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Konstantin V. Larionov
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia; (L.A.V.); (S.V.E.)
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (H.D.C.)
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Pavel B. Sorokin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia; (L.A.V.); (S.V.E.)
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Gennady N. Panin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia; (E.V.E.); (V.I.K.)
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8
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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9
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Horie R, Hirosue R, Kanasaki J, Kisoda K, Yamamoto I, Azuma J, Takahashi K. Optical film-thinning of graphene epitaxially grown on 4H-SiC(0001): robustness of monolayer-graphene against the photoexcitation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:195401. [PMID: 36854184 DOI: 10.1088/1361-648x/acbffc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
As the properties of graphene films depend on their stacked atomic layers, their thickness should be accurately controlled to improve their specific properties. However, by existing methods, controlling the homogeneity of graphene films at the atomic level remains difficult. In this work, photo-stimulated structural modifications of few-layer graphene epitaxially grown on 4H-SiC(0001) were studied using Raman scattering spectroscopy and core-level photoemission spectroscopy (CLPES). Iterative excitation with laser pulses (800 nm, 100 fs, p-polarized, 250 mJ cm-2) changed the graphene-related two-dimensional (2D) Raman line, which is composed of three components characterized by their different responses upon photoexcitation: two components decaying at fast and slow rates, and a component highly resistant to excitation. CLPES revealed that the observed decay of the 2D line was associated with the elimination of carbon atoms from the graphene layers, finally leaving the robust thin film of single-layer graphene by prolonged excitation. Therefore, this work clearly demonstrates the thickness-dependent structural stability of graphene to optical excitation and opens a promising new method for thinning graphene. An underlying mechanism for the photo-stimulated modifications was also proposed.
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Affiliation(s)
- Ryosuke Horie
- Department of Mechanical Engineering, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka 558-8585, Japan
| | - Ryuichi Hirosue
- Department of Mechanical Engineering, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka 558-8585, Japan
| | - Jun'ichi Kanasaki
- Department of Mechanical Engineering, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka 558-8585, Japan
| | - Kenji Kisoda
- Department of Physics, Wakayama University, Sakaetani 930, Wakayama 640-8441, Japan
| | - Isamu Yamamoto
- Synchrotron Light Application Center, Saga University, Honjo 1, Saga 840-8502, Japan
| | - Junpei Azuma
- Synchrotron Light Application Center, Saga University, Honjo 1, Saga 840-8502, Japan
| | - Kazutoshi Takahashi
- Synchrotron Light Application Center, Saga University, Honjo 1, Saga 840-8502, Japan
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10
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Rejhon M, Zhou X, Lavini F, Zanut A, Popovich F, Schellack L, Witek L, Coelho P, Kunc J, Riedo E. Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond-Like Coating. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204562. [PMID: 36599685 PMCID: PMC9951309 DOI: 10.1002/advs.202204562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is discovered that two-layer epitaxial graphene films on SiC can undergo a pressure activated phase transition into a sp3 diamene structure at room temperature. Here, it is shown that epitaxial graphene films grown on SiC can increase the hardness of SiC up to 100% at low loads (up to 900 µN), and up to 30% at high loads (10 mN). By using a Berkovich diamond indenter and nanoindentation experiments, it is demonstrated that the 30% increase in hardness is present even for indentations depths of 175 nm, almost three hundred times larger than the graphene film thickness. The experiments also show that the yield point of SiC increases up to 77% when the SiC surface is coated with epitaxial graphene. These improved mechanical properties are explained with the formation of diamene under the indenter's pressure.
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Affiliation(s)
- Martin Rejhon
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Xinliu Zhou
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Francesco Lavini
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Alessandra Zanut
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Filip Popovich
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Lorenzo Schellack
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Lukasz Witek
- Division of BiomaterialsDepartment of Molecular PathobiologyNew York University College of DentistryNew YorkNYUSA
| | - Paulo Coelho
- Division of BiomaterialsDepartment of Molecular PathobiologyNew York University College of DentistryNew YorkNYUSA
| | - Jan Kunc
- Charles UniversityFaculty of Mathematics and PhysicsInstitute of PhysicsKe Karlovu 5, Prague 2PragueCZ‐121 16Czech Republic
| | - Elisa Riedo
- Department of Chemical and Biomolecular EngineeringTandon School of EngineeringNew York UniversityBrooklynNY11201USA
- Department of PhysicsNew York UniversityBrooklynNY11201USA
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11
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Pressure driven rotational isomerism in 2D hybrid perovskites. Nat Commun 2023; 14:411. [PMID: 36697404 PMCID: PMC9877019 DOI: 10.1038/s41467-023-36032-y] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Accepted: 01/11/2023] [Indexed: 01/26/2023] Open
Abstract
Multilayers consisting of alternating soft and hard layers offer enhanced toughness compared to all-hard structures. However, shear instability usually exists in physically sputtered multilayers because of deformation incompatibility among hard and soft layers. Here, we demonstrate that 2D hybrid organic-inorganic perovskites (HOIP) provide an interesting platform to study the stress-strain behavior of hard and soft layers undulating with molecular scale periodicity. We investigate the phonon vibrations and photoluminescence properties of Ruddlesden-Popper perovskites (RPPs) under compression using a diamond anvil cell. The organic spacer due to C4 alkyl chain in RPP buffers compressive stress by tilting (n = 1 RPP) or step-wise rotational isomerism (n = 2 RPP) during compression, where n is the number of inorganic layers. By examining the pressure threshold of the elastic recovery regime across n = 1-4 RPPs, we obtained molecular insights into the relationship between structure and deformation resistance in hybrid organic-inorganic perovskites.
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12
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Rejhon M, Lavini F, Khosravi A, Shestopalov M, Kunc J, Tosatti E, Riedo E. Relation between interfacial shear and friction force in 2D materials. NATURE NANOTECHNOLOGY 2022; 17:1280-1287. [PMID: 36316542 DOI: 10.1038/s41565-022-01237-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer-substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. The same relationship emerges from simulations with simple friction models, where the atomic layer-substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.
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Affiliation(s)
- Martin Rejhon
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA
| | - Francesco Lavini
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA
| | - Ali Khosravi
- International School for Advanced Studies (SISSA), Trieste, Italy
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Trieste, Italy
- Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche (CNR), Trieste, Italy
| | - Mykhailo Shestopalov
- Faculty of Mathematics and Physics, Institute of Physics, Charles University, Prague, Czech Republic
| | - Jan Kunc
- Faculty of Mathematics and Physics, Institute of Physics, Charles University, Prague, Czech Republic
| | - Erio Tosatti
- International School for Advanced Studies (SISSA), Trieste, Italy
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Trieste, Italy
- Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche (CNR), Trieste, Italy
| | - Elisa Riedo
- Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, USA.
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13
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Wang J, Li L, Wang J, Yang W, Guo P, Li M, Liu D, Zeng H, Zhao B. First-Principles Study on the Nanofriction Properties of Diamane: The Thinnest Diamond Film. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2939. [PMID: 36079976 PMCID: PMC9457850 DOI: 10.3390/nano12172939] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Revised: 08/19/2022] [Accepted: 08/23/2022] [Indexed: 06/15/2023]
Abstract
Diamane, the thinnest sp3-hybridized diamond film, has attracted great interest due to its excellent mechanical, electronic, and thermal properties inherited from both graphene and diamond. In this study, the friction properties of surface hydrogenated and fluorinated diamane (H- and F-diamane) are investigated with dispersion-corrected density functional theory (DFT) calculations for the first time. Our calculations show that the F-diamane exhibits approximately equal friction to graphene, despite the presence of morphological corrugation induced by sp3 hybridization. Comparative studies have found that the coefficient of friction of H-diamane is about twice that of F-diamane, although they have the same surface geometric folds. These results are attributed to the packed charge surface of F-diamane, which can not only effectively shield carbon interactions from two contacting films, but also provide strong electron-electron repulsive interaction, resulting in a large interlayer distance and a small wrinkle of potential energy at the interface. The interesting results obtained in this study have enriched our understanding of the tribological properties of diamane, and are the tribological basis for the design and application of diamane in nanodevices.
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Affiliation(s)
- Jianjun Wang
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Lin Li
- Delivery & Devices Research and Development, Eli Lilly and Company, Indianapolis, IN 46285, USA
| | - Jiudong Wang
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Wentao Yang
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Peng Guo
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Meng Li
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Dandan Liu
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Haoxian Zeng
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Bin Zhao
- Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, College of Science, Zhongyuan University of Technology, Zhengzhou 450007, China
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14
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Chahal S, Bandyopadhyay A, Dash SP, Kumar P. Microwave Synthesized 2D Gold and Its 2D-2D Hybrids. J Phys Chem Lett 2022; 13:6487-6495. [PMID: 35819242 DOI: 10.1021/acs.jpclett.2c01540] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Xenes, i.e., monoelemental two-dimensional atomic sheets, are promising for sensitive and ultrafast sensor applications owing to exceptional carrier mobility; however, most of them oxidize below 500 °C and therefore cannot be employed for high-temperature applications. 2D gold, an oxidation-resistant plasmonic Xene, is extremely promising. 2D gold was experimentally realized by both atomic layer deposition and chemical synthesis using sodium citrate. However, it is imperative to develop a new facile single-step method to synthesize 2D gold. Here, liquid-phase synthesis of 2D gold is demonstrated by microwave exposure to auric chloride dispersed in dimethylformamide. Microscopies (AFM and high-resolution TEM), spectroscopies (Raman, UV-vis, and X-ray photoelectron), and X-ray diffraction establish the formation of a hexagonal crystallographic phase for 2D gold. 2D-2D hybrids of 2D gold have also been synthesized and investigated for electronic/optoelectronic behaviors and SERS-based molecular sensing. DFT band structure calculation for 2D gold and its hybrids corroborates the experimental findings.
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Affiliation(s)
- Sumit Chahal
- Department of Physics, Indian Institute of Technology Patna, Bihta Campus, Patna-801106, India
| | - Arkamita Bandyopadhyay
- The Bremen Center for Computational Materials Science (BCCMS), Universität Bremen, Am Fallturm 1, TAB Building, 28359 Bremen, Germany
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Prashant Kumar
- Department of Physics, Indian Institute of Technology Patna, Bihta Campus, Patna-801106, India
- Global Innovative Center for Advanced Nanomaterials, University of Newcastle, Callaghan, New South Wales 2308, Australia
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15
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Hu Y, Li D, Feng C, Li S, Chen B, Li D, Zhang G. Nanostructure engineering of two-dimensional diamonds toward high thermal conductivity and approaching zero Poisson's ratio. Phys Chem Chem Phys 2022; 24:15340-15348. [PMID: 35703326 DOI: 10.1039/d2cp01745h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
Two-dimensional diamond, also called diamane, has attracted great research attention for its novel physical properties and potential applications in nanoelectronics, ultrasensitive resonators and thermal management. Compared with the hexagonal diamane, the physical properties of the rectangular diamane are less explored. In this work, using first-principles calculations, we conducted a comprehensive study on the electronic, phononic, thermal and mechanical properties of three types of rectangular diamanes. We found that rectangular diamanes possess a high Debye temperature (722-788 K) and a strong in-plane Young's modulus (405.9-575.9 N m-1). We further show close to zero Poisson's ratio in the rectangular Pmma diamane. Moreover, based on the phonon Boltzmann transport equation, high room temperature lattice thermal conductivity (910-1807 W m-1 K-1) and strong configuration and orientation dependence are demonstrated. Phonon group velocity, relaxation time and characteristic square velocity are explored and it is demonstrated that phonon harmonic behavior is responsible for the remarkable configuration dependent thermal conductivity in rectangular diamanes. The present work underscores the use of nanostructure engineering to manipulate thermal conductivity of 2D diamond, which provides opportunities for developing effective thermal channeling devices.
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Affiliation(s)
- Yanxiao Hu
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Ding Li
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Chunbao Feng
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Shichang Li
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Bole Chen
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Dengfeng Li
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China.
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR, 138632, Singapore.
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16
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Hong Y, Kretchmer JS. Interfacial thermal transport between graphene and diamane. J Chem Phys 2022; 156:164703. [PMID: 35489998 DOI: 10.1063/5.0079462] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022] Open
Abstract
Similar to graphene, diamane is a single layer of diamond that has been investigated in recent years due to its peculiar mechanical, thermal, and electronic properties. Motivated by earlier work that showed an exceptionally high intra-plane thermal conductivity in diamane, in this work, we investigate the interfacial thermal resistance (R) between graphene and diamane using non-equilibrium classical molecular dynamics simulations. The calculated R for a pristine graphene and AB-stacked diamane at room temperature is 1.89 × 10-7 K m2/W, which is comparable to other common graphene/semi-conductor bilayers. These results are understood in terms of the overlap of the phonon density of states between the graphene and diamane layers. We further explore the impact of stacking pattern, system temperature, coupling strength, in-plane tensile strain, and hydrogenation ratio on R. Intriguingly, we find that unlike single layer diamane, where the intra-plane thermal conductively is reduced by ∼50% under 5% strain, the inter-plane thermal conductance of the graphene-diamane bilayer is enhanced by ∼50% under 8% strain. The difference is caused by the opposite behavior between the inter- and intra-layer conductances as phonon relaxation time is decreased. The high intra-plane thermal conductivity and low inter-plane thermal resistance shows the high potential of using graphene-diamane heterostructures in electronic applications.
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Affiliation(s)
- Yang Hong
- School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Joshua S Kretchmer
- School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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17
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Tiwari SK, Pandey R, Wang N, Kumar V, Sunday OJ, Bystrzejewski M, Zhu Y, Mishra YK. Progress in Diamanes and Diamanoids Nanosystems for Emerging Technologies. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105770. [PMID: 35174979 PMCID: PMC9008418 DOI: 10.1002/advs.202105770] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
New materials are the backbone of their technology-driven modern civilization and at present carbon nanostructures are the leading candidates that have attracted huge research activities. Diamanes and diamanoids are the new nanoallotropes of sp3 hybridized carbon which can be fabricated by proper functionalization, substitution, and via Birch reduction under controlled pressure using graphitic system as a precursor. These nanoallotropes exhibit outstanding electrical, thermal, optical, vibrational, and mechanical properties, which can be an asset for new technologies, especially for quantum devices, photonics, and space technologies. Moreover, the features like wide bandgap, tunable thermal conductivity, excellent thermal insulation, etc. make diamanes and diamanoids ideal candidates for nano-electrical devices, nano-resonators, optical waveguides, and the next generation thermal management systems. In this review, diamanes and diamanoids are discussed in detail in terms of its historical prospect, method of synthesis, structural features, broad properties, and cutting-edge applications. Additionally, the prospects of diamanes and diamanoids for new applications are carefully discussed. This review aims to provide a critical update with important ideas for a new generation of quantum devices based on diamanes and diamanoids which are going to be an important topic in the future of carbon nanotechnology.
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Affiliation(s)
- Santosh K. Tiwari
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Raunak Pandey
- Department of Chemical Science and EngineeringKathmandu UniversityDhulikhel44600Nepal
| | - Nannan Wang
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Vijay Kumar
- Department of PhysicsNational Institute of Technology SrinagarHazratbalJammu and Kashmir19006India
- Department of PhysicsUniversity of the Free StateP.O. Box 339BloemfonteinZA9300South Africa
| | - Olusegun J. Sunday
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
| | | | - Yanqiu Zhu
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
- College of EngineeringMathematics and Physical SciencesUniversity of ExeterExeterEX4 4QFUK
| | - Yogendra Kumar Mishra
- Smart MaterialsNanoSYDMads Clausen InstituteUniversity of Southern DenmarkAlsion 2Sønderborg6400Denmark
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18
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Chen Y, Zhang H, Wen B, Li XB, Wei XL, Yin W, Liu LM, Teobaldi G. The Role of Permanent and Induced Electrostatic Dipole Moments for Schottky Barriers in Janus MXY/Graphene Heterostructures: a First Principles Study. Dalton Trans 2022; 51:9905-9914. [DOI: 10.1039/d2dt00584k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The Schottky barrier height (ESBH) is a crucial factor in determining the transport properties of semiconductor materials and it directly regulates the carrier mobility in opto-electronics devices. In principle, van...
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19
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Pham KD. Tunable structural and electronic properties of C4XY (X # Y = H, Cl and F) monolayers by functionalization, electric field and strain engineering. NEW J CHEM 2022. [DOI: 10.1039/d2nj01076c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this work, we systematically investigate the electronic and mechanical properties of diamane C4X2 (X = H, Cl and F) monolayers as well as the formation of Janus functionalized X/Y-diamane...
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20
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Xiao K, Yin Q, Wu X, Huang C. Mechanical behavior of single-layer graphdiyne via supersonic micro-projectile impact. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.12.002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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21
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Shu H. Novel Janus diamane C 4FCl: a stable and moderate bandgap semiconductor with a huge excitonic effect. Phys Chem Chem Phys 2021; 23:18951-18957. [PMID: 34612434 DOI: 10.1039/d1cp02632a] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Semiconducting two-dimensional Janus materials have drawn increasing attention due to their novel optoelectronic properties. Here, employing first-principles calculations, we systematically explore the stability and electronic and optical properties of Janus diamane C4FCl. The energetic and dynamical stabilities of C4FCl have been verified using the cohesive energy and phonon dispersion calculations. It is predicted to possess a direct bandgap of ∼3 eV at the Γ point using the G0W0 method. Also, the optical absorption spectrum of C4FCl is dominated by the enhanced excitonic effects, in which a bright bound exciton with a large binding energy beyond 1 eV can be observed. The light absorption coefficient of C4FCl for sunlight can be as large as 8 × 104 cm-1 in the range of visible and near-ultraviolet light, suggesting its potential for optoelectronic applications. These findings enable a deep understanding of the physical properties of novel C4FCl.
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Affiliation(s)
- Huabing Shu
- School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China.
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22
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Chen W, Li JT, Wang Z, Algozeeb WA, Luong DX, Kittrell C, McHugh EA, Advincula PA, Wyss KM, Beckham JL, Stanford MG, Jiang B, Tour JM. Ultrafast and Controllable Phase Evolution by Flash Joule Heating. ACS NANO 2021; 15:11158-11167. [PMID: 34138536 DOI: 10.1021/acsnano.1c03536] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Flash Joule heating (FJH), an advanced material synthesis technique, has been used for the production of high-quality carbon materials. Direct current discharge through the precursors by large capacitors has successfully converted carbon-based starting materials into bulk quantities of turbostratic graphene by the FJH process. However, the formation of other carbon allotropes, such as nanodiamonds and concentric carbon materials, as well as the covalent functionalization of different carbon allotropes by the FJH process, remains challenging. Here, we report the solvent-free FJH synthesis of three different fluorinated carbon allotropes: fluorinated nanodiamonds, fluorinated turbostratic graphene, and fluorinated concentric carbon. This is done by millisecond flashing of organic fluorine compounds and fluoride precursors. Spectroscopic analysis confirms the modification of the electronic states and the existence of various short-range and long-range orders in the different fluorinated carbon allotropes. The flash-time-dependent relationship is further demonstrated to control the phase evolution and product compositions.
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23
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Sorokin PB, Yakobson BI. Two-Dimensional Diamond-Diamane: Current State and Further Prospects. NANO LETTERS 2021; 21:5475-5484. [PMID: 34213910 DOI: 10.1021/acs.nanolett.1c01557] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional diamond, or diamane, is an ultrathin film with unique physical properties that combine the record values of the bulk crystal with the exciting features caused by the nanoscale nature. At the current stage of research, the diamane properties are mostly studied theoretically, and the main experimental efforts are directed at its synthesis. The latter is the trickiest problem since traditional methods involving the application of high pressure are not fully suitable due to the influence of surface effects. For diamane research, this poses a number of challenges, whose description is the main purpose and scope of this review. The paper also discusses the progress made so far and outlines the prospects for this field, at the crossroads of the timeless diamond and decade-old graphene.
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Affiliation(s)
- Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russian Federation
| | - Boris I Yakobson
- Department of Mechanical Engineering & Materials Science and the Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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24
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Vu TV, Phuc HV, Ahmad S, Nha VQ, Van Lanh C, Rai DP, Kartamyshev AI, Pham KD, Nhan LC, Hieu NN. Outstanding elastic, electronic, transport and optical properties of a novel layered material C 4F 2: first-principles study. RSC Adv 2021; 11:23280-23287. [PMID: 35479814 PMCID: PMC9036559 DOI: 10.1039/d1ra04065k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 06/25/2021] [Indexed: 11/21/2022] Open
Abstract
Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namely fluorinated diamane C4F2) [P. V. Bakharev, M. Huang, M. Saxena, S. W. Lee, S. H. Joo, S. O. Park, J. Dong, D. C. Camacho-Mojica, S. Jin, Y. Kwon, M. Biswal, F. Ding, S. K. Kwak, Z. Lee and R. S. Ruoff, Nat. Nanotechnol., 2020, 15, 59-66], we systematically investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C4F2 by using density functional theory. Our obtained results demonstrate that at the ground state, the lattice constant of C4F2 is 2.56 Å with chemical bonding between the C-C interlayer and intralayer bond lengths of about 1.5 Å which are close to the C-C bonding in the bulk diamond. Based on calculations for the phonon spectrum and ab initio molecular dynamics simulations, the structure of C4F2 is confirmed to be dynamically and thermally stable. C4F2 exhibits superior mechanical properties with a very high Young's modulus of 493.19 N m-1. Upon fluorination, the formation of C-C bonding between graphene layers has resulted in a comprehensive alteration of electronic properties of C4F2. C4F2 is a direct semiconductor with a large band gap and phase transitions are found when a biaxial strain or external electric field is applied. Interestingly, C4F2 has very high electron mobility, up to 3.03 × 103 cm2 V-1 s-1, much higher than other semiconductor compounds. Our findings not only provide a comprehensive insight into the physical properties of C4F2 but also open up its applicability in nanoelectromechanical and optoelectronic devices.
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Affiliation(s)
- Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Viet Nam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Viet Nam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Sohail Ahmad
- Department of Physics, College of Science, King Khalid University P.O. Box 9004 Abha Saudi Arabia
| | - Vo Quang Nha
- School of Engineering and Technology, Hue University Hue Viet Nam
| | - Chu Van Lanh
- Department of Physics, Vinh University 182 Le Duan Vinh City Viet Nam
| | - D P Rai
- Physical Sciences Research Center, Department of Physics, Pachhunga University College, Mizoram University Aizawl 796001 India
| | - A I Kartamyshev
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Viet Nam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Viet Nam
| | - Khang D Pham
- Military Institute of Mechanical Engineering Ha Noi 100000 Viet Nam
| | - Le Cong Nhan
- Department of Environmental Science, Sai Gon University Ho Chi Minh City Viet Nam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Viet Nam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Viet Nam
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25
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Penev ES, Marzari N, Yakobson BI. Theoretical Prediction of Two-Dimensional Materials, Behavior, and Properties. ACS NANO 2021; 15:5959-5976. [PMID: 33823108 DOI: 10.1021/acsnano.0c10504] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Predictive modeling of two-dimensional (2D) materials is at the crossroad of two current rapidly growing interests: 2D materials per se, massively sought after and explored in experimental laboratories, and materials theoretical-computational models in general, flourishing on a fertile mix of condensed-matter physics and chemistry with advancing computational technology. Here the general methods and specific techniques of modeling are briefly overviewed, along with a somewhat philosophical assessment of what "prediction" is, followed by selected practical examples for 2D materials, from structures and properties, to device functionalities and synthetic routes for their making. We conclude with a brief sketch-outlook of future developments.
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Affiliation(s)
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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26
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Modifying Electronic and Elastic Properties of 2-Dimensional [110] Diamond by Nitrogen Substitution. C — JOURNAL OF CARBON RESEARCH 2021. [DOI: 10.3390/c7010008] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2022]
Abstract
One type of two-dimensional diamonds that are derived from [111] direction, so-called diamane, has been previously shown to be stabilized by N-substitution, where the passivation of dangling bonds is no longer needed. In the present work, we theoretically demonstrated that another type of two-dimensional diamonds derived from [110] direction exhibiting a washboard conformation can also be stabilized by N-substitution. Three structural models of washboard-like carbon nitrides with compositions of C6N2, C5N3, and C4N4 are studied together with the fully hydrogenated washboard-like diamane (C8H4). The result shows that the band gap of this type structure is only open the dangling bonds that are entirely diminished through N-substitution. By increasing the N content, the C11 and C22 are softer and the C33 is stiffer where their bulk modulus are in the same order, which is approximately 550 GPa. When comparing with the hydrogenated phase, the N-substituted phases have higher elastic constants and bulk modulus, suggesting that they are possibly harder than the fully hydrogenated diamane.
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27
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Ge L, Liu H, Wang J, Huang H, Cui Z, Huang Q, Fu Z, Lu Y. Properties of diamane anchored with different groups. Phys Chem Chem Phys 2021; 23:14195-14204. [PMID: 34159999 DOI: 10.1039/d1cp01747k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
The two-dimensional counterpart of diamond, diamane, has attracted increasing interest due to its potentially distinctive properties. In this paper, diamanes anchored with different anion groups have been systematically studied with density functional theory (DFT) for the first time. Among them 12 conformers are confirmed to be stable and present direct semiconductor features with bandgaps ranging from 2.527 eV to 4.153 eV, and the in-plane stiffness is larger than that of graphene. Moreover, the electron carrier mobility of chair2-F is exceptionally high at 16546.713 cm2 V-1 s-1 along the y-direction, which is remarkably larger than that of diamond; and N-, B-doped boat2-H can be doped to have n-, p-type conductivity with a moderate activation energy of 0.34 and 0.37 eV, respectively. This work suggests that functionalized diamanes are promising for electronic devices and engineering materials.
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Affiliation(s)
- Liangbing Ge
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Huan Liu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Jianling Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Haoliang Huang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - ZhangZhang Cui
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Qiuping Huang
- Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Zhengping Fu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
| | - Yalin Lu
- CAS Key Laboratory of Materials for Energy Conversion & Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Hefei National Research Center for Physical Sciences at the Microscale, Hefei, Anhui 230026, P. R. China and Anhui Laboratory of Advanced Photon Science and Technology, Hefei 230026, P. R. China
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Cellini F, Lavini F, Chen E, Bongiorno A, Popovic F, Hartman RL, Dingreville R, Riedo E. Pressure-Induced Formation and Mechanical Properties of 2D Diamond Boron Nitride. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2002541. [PMID: 33511011 PMCID: PMC7816702 DOI: 10.1002/advs.202002541] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Revised: 09/02/2020] [Indexed: 05/31/2023]
Abstract
Understanding phase transformations in 2D materials can unlock unprecedented developments in nanotechnology, since their unique properties can be dramatically modified by external fields that control the phase change. Here, experiments and simulations are used to investigate the mechanical properties of a 2D diamond boron nitride (BN) phase induced by applying local pressure on atomically thin h-BN on a SiO2 substrate, at room temperature, and without chemical functionalization. Molecular dynamics (MD) simulations show a metastable local rearrangement of the h-BN atoms into diamond crystal clusters when increasing the indentation pressure. Raman spectroscopy experiments confirm the presence of a pressure-induced cubic BN phase, and its metastability upon release of pressure. Å-indentation experiments and simulations show that at pressures of 2-4 GPa, the indentation stiffness of monolayer h-BN on SiO2 is the same of bare SiO2, whereas for two- and three-layer-thick h-BN on SiO2 the stiffness increases of up to 50% compared to bare SiO2, and then it decreases when increasing the number of layers. Up to 4 GPa, the reduced strain in the layers closer to the substrate decreases the probability of the sp2-to-sp3 phase transition, explaining the lower stiffness observed in thicker h-BN.
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Affiliation(s)
- Filippo Cellini
- Tandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Francesco Lavini
- Tandon School of EngineeringNew York UniversityBrooklynNY11201USA
- Department of PhysicsNew York UniversityNew YorkNY10003USA
| | - Elton Chen
- Center for Integrated NanotechnologiesSandia National LaboratoriesAlbuquerqueNM87185USA
| | - Angelo Bongiorno
- Department of ChemistryCollege of Staten IslandCity University of New YorkStaten IslandNY10314USA
- CUNY Graduate CenterPh.D. Program in Chemistry and PhysicsNew YorkNY10016USA
| | - Filip Popovic
- Tandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Ryan L. Hartman
- Tandon School of EngineeringNew York UniversityBrooklynNY11201USA
| | - Remi Dingreville
- Center for Integrated NanotechnologiesSandia National LaboratoriesAlbuquerqueNM87185USA
| | - Elisa Riedo
- Tandon School of EngineeringNew York UniversityBrooklynNY11201USA
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Erohin SV, Ruan Q, Sorokin PB, Yakobson BI. Nano-Thermodynamics of Chemically Induced Graphene-Diamond Transformation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004782. [PMID: 33107167 DOI: 10.1002/smll.202004782] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Revised: 09/28/2020] [Indexed: 05/27/2023]
Abstract
Nearly 2D diamond, or diamane, is coveted as an ultrathin sp3 -carbon film with unique mechanics and electro-optics. The very thinness (≈h) makes it possible for the surface chemistry, for example, adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure (p/p∞ > 1 - h0 /h) but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene is in AA' stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered.
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Affiliation(s)
- Sergey V Erohin
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
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Hu Y, Li D, Yin Y, Li S, Ding G, Zhou H, Zhang G. The important role of strain on phonon hydrodynamics in diamond-like bi-layer graphene. NANOTECHNOLOGY 2020; 31:335711. [PMID: 32353835 DOI: 10.1088/1361-6528/ab8ee1] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, combining first-principles calculation and the phonon Boltzmann transport equation, we explored the diffusive thermal conductivity of diamond-like bi-layer graphene. The converged iterative solution provides high room temperature thermal conductivity of 2034 W mK-1, significantly higher than other 2D materials. More interesting, the thermal conductivity calculated by relaxation time approximation is about 33% underestimated, revealing a remarkable phonon hydrodynamic transport characteristic. Significant strain dependence is reported, for example, under 5% tensile strain, room temperature thermal conductivity (1081 W mK-1) of only about 50% of the strain-free sample, and under 20% strain, it reduces dramatically to only about 11% of the intrinsic one (226 W mK-1). Unexpectedly, in addition to the remarkable reduction in the absolute value of thermal conductivity, tensile strain can impact the hydrodynamic significance. For example, under 5% strain, the underestimation of relaxation time approximation in thermal conductivity is reduced to 20%. Furthermore, using a non-equilibrium Green's function calculation, high ballistic thermal conductance (2.95 GW m-2 K-1) is demonstrated, and the mean free path is predicted to be 700 nm at room temperature. The importance of the knowledge of phonon transport in diamond-like bi-layer graphene goes beyond fundamental physics owing to its relevance to thermal management applications due to the super-high thermal conduction.
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Affiliation(s)
- Yanxiao Hu
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, People's Republic of China
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31
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Ke F, Zhang L, Chen Y, Yin K, Wang C, Tzeng YK, Lin Y, Dong H, Liu Z, Tse JS, Mao WL, Wu J, Chen B. Synthesis of Atomically Thin Hexagonal Diamond with Compression. NANO LETTERS 2020; 20:5916-5921. [PMID: 32578991 DOI: 10.1021/acs.nanolett.0c01872] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Atomically thin diamond, also called diamane, is a two-dimensional carbon allotrope and has attracted considerable scientific interest because of its potential physical properties. However, the successful synthesis of a pristine diamane has up until now not been achieved. We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Resistance, optical absorption, and X-ray diffraction measurements reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to ∼1.0 GPa. Theoretical calculations indicate that a (-2110)-oriented h-diamane is energetically stable and has a lower enthalpy than its few-layer graphene precursor above the transition pressure. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices.
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Affiliation(s)
- Feng Ke
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lingkong Zhang
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yabin Chen
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Ketao Yin
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Chenxu Wang
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
| | - Yan-Kai Tzeng
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Yu Lin
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Zhenxian Liu
- Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - John S Tse
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Wendy L Mao
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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32
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Greshnyakov VA, Belenkov EA. Ab Initio Calculations of Carbon Bilayers with Diamond-Like Structures. J STRUCT CHEM+ 2020. [DOI: 10.1134/s0022476620060013] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Lin K, Li D, Song S, Ye Z, Jiang W, Qin QH. Enhanced mechanical properties of 4H-SiC by epitaxial carbon films obtained from bilayer graphene. NANOTECHNOLOGY 2020; 31:195702. [PMID: 31958776 DOI: 10.1088/1361-6528/ab6d9e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Graphene exhibits excellent mechanical properties under atomically thin thickness, which made it very suitable for nanoelectromechanical systems that had high requirements for the thickness of coatings. The epitaxial bilayer graphene on the 4H-SiC (0001) surface presents high stiffness and hardness comparable to diamond. However, due to structural transition occurring at the nanoscale, it is difficult to elucidate reinforcement mechanisms using experimental methods. Here, we applied molecular dynamics simulations to study nanoindentation of epitaxial carbon-film-covered 4H-SiC (0001) surfaces. Because a weak interaction potential existed between graphene layers at indentation depth (h < 0.8 Å) that far smaller than interlayer distance, the epitaxial bilayer graphene does not allow the 4H-SiC to exceed its intrinsic stiffness. When the indentation depth h ≥6.45 Å, the sp3 hybridized bonds formed on the interlayer of graphene, which leads to fewer amorphous atoms in the sample of 4H-SiC and exhibits stronger stiffness, in comparison with bare 4H-SiC. This strongly suggests the existence of sp3 bonds contributing to the surface strengthening. Meanwhile, we found that the comprehensive mechanical properties of nanocomposites with hydrogenated diamond-like films were superior to those of nanocomposites with other carbon films at high temperatures.
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Affiliation(s)
- Kuixin Lin
- School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063, People's Republic of China
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Analogous Diamondene Nanotube Structure Prediction Based on Molecular Dynamics and First-Principle Calculations. NANOMATERIALS 2020; 10:nano10050846. [PMID: 32353973 PMCID: PMC7711906 DOI: 10.3390/nano10050846] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2020] [Revised: 04/17/2020] [Accepted: 04/22/2020] [Indexed: 01/06/2023]
Abstract
A concentric twin tube (CTT) can be built by placing a carbon nanotube (CNT) in another identical CNT. Different from diamondene nanotubes, a stable CTT has no inter-shell covalent bond. As a prestressed double-walled nanotube, CTT has a lower structural stability at a finite temperature. According to the molecular dynamics and first-principle calculations, (a) CTTs have three types of relaxed configurations. In a type III CTT, the inner tube buckles to produce a V-shaped cross-section, and the outer tube may be convex or concave. (b) The minimal radii of relaxed zigzag and armchair CTTs with concave outer tubes were found. (c) After relaxation, the circumferences and areas of the two tubes in a type III CTT are different from those of the corresponding ideal CNT. The area change rate (A-CR) and circumference change rate (C-CR) of the outer tube are the first-order Gaussian function of the radius of the ideal CNT (which forms the CTT), and tends to be 73.3% of A-CR or 95.3% of C-CR, respectively. For the inner tube of a CTT, the A-CR is between 29.3% and 37.0%, and the C-CR is close to 95.8%. (d) The temperature slightly influences the findings given above.
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Niu C, Cheng Y, Yang K, Zhang J, Zhang H, Zeng Z, Wang X. Boron-dopant enhanced stability of diamane with tunable band gap. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:135503. [PMID: 31805547 DOI: 10.1088/1361-648x/ab5f37] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The structural, electronic, and superconducting properties of B-doped cubic and hexagonal diamane (single layer diamond) were investigated based on the first-principles methods. B atom tends to stay in the substitutional site, and the most stable configuration is the structure with vertical B-B dimer. The formation energy of B-doped diamane is lower than the counterpart of pristine diamane indicating that B dopant can facilitate the synthesis of diamane. The configurations with vertical B-B dimers are semiconductors with tunable band gaps, which decrease with the B concentration increasing due to the interaction between B-B dimers. For example, the band gap of 3.125 mol% and 6.25 mol% B-doped cubic diamane is 1.82 eV and 1.44 eV, respectively. Moreover, configurations with meta-stable B distributions are metals, which have comparable superconducting transition temperatures with B-doped diamond (~4 K).
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Affiliation(s)
- Caoping Niu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China. University of Science and Technology of China, Hefei 230026, People's Republic of China
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36
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Bakharev PV, Huang M, Saxena M, Lee SW, Joo SH, Park SO, Dong J, Camacho-Mojica DC, Jin S, Kwon Y, Biswal M, Ding F, Kwak SK, Lee Z, Ruoff RS. Chemically induced transformation of chemical vapour deposition grown bilayer graphene into fluorinated single-layer diamond. NATURE NANOTECHNOLOGY 2020; 15:59-66. [PMID: 31819243 DOI: 10.1038/s41565-019-0582-z] [Citation(s) in RCA: 83] [Impact Index Per Article: 20.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 10/26/2019] [Indexed: 05/09/2023]
Abstract
Notwithstanding the numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film carried out to date, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene grown by chemical vapour deposition on a single-crystal CuNi(111) surface triggers the formation of interlayer carbon-carbon bonds, resulting in a fluorinated diamond monolayer ('F-diamane'). Induced by fluorine chemisorption, the phase transition from (AB)-stacked bilayer graphene to single-layer diamond was studied and verified by X-ray photoelectron, UV photoelectron, Raman, UV-Vis and electron energy loss spectroscopies, transmission electron microscopy and density functional theory calculations.
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Affiliation(s)
- Pavel V Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Manav Saxena
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- Centre for Nano Material Sciences, Jain University, Karnataka, India
| | - Suk Woo Lee
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Se Hun Joo
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Sung O Park
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Jichen Dong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Dulce C Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Sang Kyu Kwak
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
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Bhattacharjee S, Joshi R, Chughtai AA, Macintyre CR. Graphene Modified Multifunctional Personal Protective Clothing. ADVANCED MATERIALS INTERFACES 2019; 6:1900622. [PMID: 32313805 PMCID: PMC7161773 DOI: 10.1002/admi.201900622] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Revised: 07/22/2019] [Indexed: 05/18/2023]
Abstract
Personal protective clothing is intended to protect the wearer from various hazards (mechanical, biological, chemical, thermal, radiological, etc.) and inhospitable environmental conditions that may cause harm or even death. There are various types of personal protective clothing, manufactured with different materials based on hazards and end user requirements. Conventional protective clothing has impediments such as high weight, bulky nature, lack of mobility, heat stress, low heat dissipation, high physical stress, diminishing dexterity, diminishing scope of vision, lack of breathability, and reduced protection against pathogens and hazards. By virtue of the superlative properties of graphene, fabrics modified with this material can be an effective means to overcome these limitations and to improve properties such as mechanical strength, antibacterial activity, flame resistance, conductivity, and UV resistance. The limitations of conventional personal protective equipment are discussed, followed by necessary measures which might be taken to improve personal protective equipment (PPE), the unique properties of graphene, methods of graphene incorporation in fabrics, and the current research status and potential of graphene-modified performance textiles relevant to PPE.
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Affiliation(s)
- Shovon Bhattacharjee
- Biosecurity ProgramThe Kirby InstituteUniversity of New South WalesKensingtonSydneyNSW2052Australia
- Department of Applied Chemistry and Chemical EngineeringNoakhali Science and Technology UniversityNoakhali3814Bangladesh
| | - Rakesh Joshi
- School of Materials Science and EngineeringUniversity of New South WalesKensingtonSydneyNSW2052Australia
| | - Abrar Ahmad Chughtai
- School of Public Health and Community MedicineUniversity of New South WalesKensingtonSydneyNSW2052Australia
| | - Chandini Raina Macintyre
- College of Public Service and Community Solutions and College of Health SolutionsArizona State UniversityTempeAZ85287USA
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Liu X, Kumar M, Calo A, Albisetti E, Zheng X, Manning KB, Elacqua E, Weck M, Ulijn RV, Riedo E. Sub-10 nm Resolution Patterning of Pockets for Enzyme Immobilization with Independent Density and Quasi-3D Topography Control. ACS APPLIED MATERIALS & INTERFACES 2019; 11:41780-41790. [PMID: 31609566 DOI: 10.1021/acsami.9b11844] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The ability to precisely control the localization of enzymes on a surface is critical for several applications including biosensing, bionanoreactors, and single molecule studies. Despite recent advances, fabrication of enzyme patterns with resolution at the single enzyme level is limited by the lack of lithography methods that combine high resolution, compatibility with soft, polymeric structures, ease of fabrication, and high throughput. Here, a method to generate enzyme nanopatterns (using thermolysin as a model system) on a polymer surface is demonstrated using thermochemical scanning probe lithography (tc-SPL). Electrostatic immobilization of negatively charged sulfonated enzymes occurs selectively at positively charged amine nanopatterns produced by thermal deprotection of amines along the side-chain of a methacrylate-based copolymer film via tc-SPL. This process occurs simultaneously with local thermal quasi-3D topographical patterning of the same polymer, offering lateral sub-10 nm resolution, and vertical 1 nm resolution, as well as high throughput (5.2 × 104 μm2/h). The obtained single-enzyme resolution patterns are characterized by atomic force microscopy (AFM) and fluorescence microscopy. The enzyme density, the surface passivation, and the quasi-3D arbitrary geometry of these patterned pockets are directly controlled during the tc-SPL process in a single step without the need of markers or masks. Other unique features of this patterning approach include the combined single-enzyme resolution over mm2 areas and the possibility of fabricating enzymes nanogradients.
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Affiliation(s)
- Xiangyu Liu
- Tandon School of Engineering , New York University , Brooklyn , New York 11201 , United States
| | - Mohit Kumar
- Advanced Science Research Center (ASRC) , CUNY Graduate Center , New York , New York 10031 , United States
| | - Annalisa Calo
- Tandon School of Engineering , New York University , Brooklyn , New York 11201 , United States
| | - Edoardo Albisetti
- Tandon School of Engineering , New York University , Brooklyn , New York 11201 , United States
- Dipartimento di Fisica , Politecnico di Milano , Milano , 20133 , Italy
| | - Xiaorui Zheng
- Tandon School of Engineering , New York University , Brooklyn , New York 11201 , United States
| | - Kylie B Manning
- Department of Chemistry , New York University , New York , New York 10003 , United States
| | - Elizabeth Elacqua
- Department of Chemistry , New York University , New York , New York 10003 , United States
- Department of Chemistry , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Marcus Weck
- Department of Chemistry , New York University , New York , New York 10003 , United States
| | - Rein V Ulijn
- Advanced Science Research Center (ASRC) , CUNY Graduate Center , New York , New York 10031 , United States
| | - Elisa Riedo
- Tandon School of Engineering , New York University , Brooklyn , New York 11201 , United States
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Wang L, Zhang R, Shi J, Cai K. Vibration behavior of diamondene nano-ribbon passivated by hydrogen. Sci Rep 2019; 9:15783. [PMID: 31673112 PMCID: PMC6823498 DOI: 10.1038/s41598-019-52343-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2019] [Accepted: 10/10/2019] [Indexed: 11/28/2022] Open
Abstract
Diamondene is a new kind of two dimensional carbon allotrope with excellent properties and passivation approaches are often used to reduce the extremely high pressure required during its fabrication. When a one-end-clamped diamondene ribbon is hydrogenated on one surface, the ribbon tends to bend and vibrate due to asymmetric layout of C-H bonds on two surfaces. In the present work, the vibration behavior, including natural curvatures and vibration frequencies of diamondene ribbons, were investigated by molecular dynamics simulations. Results indicate that the natural curvature radius of a narrow diamondene ribbon is close to 12.17 nm at a temperature below 150 K, which is essential for fabricating an arc nanodevice. The first order frequency (f1) of a cantilever beam made from the ribbon follows traditional beam vibration theory if the slenderness ratio is low. In particular, f1 increases logarithmically at temperature below 50 K, but changes slightly between 50 K and 150 K. It suggests a design scheme for a nanoresonator with temperature-controlled frequency.
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Affiliation(s)
- Lei Wang
- Department of Engineering Mechanics, College of Mechanics and Materials, Hohai University, Nanjing, 211100, China
| | - Ranran Zhang
- Department of Engineering Mechanics, College of Mechanics and Materials, Hohai University, Nanjing, 211100, China
| | - Jiao Shi
- College of Water Resources and Architectural Engineering, Northwest A&F University, Yangling, 712100, China.,State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
| | - Kun Cai
- Centre for Innovative Structures and Materials, School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia.
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Gupta S, Narayan J. Reduced Graphene Oxide/Amorphous Carbon P-N Junctions: Nanosecond Laser Patterning. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24318-24330. [PMID: 31184475 DOI: 10.1021/acsami.9b05374] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The device integration of graphene and reduced graphene oxide (rGO) is impeded by scalability and high temperature (>2000 K) treatment required for effective reduction into high-quality rGO. In this article, we present a novel approach for direct laser writing of heavily reduced graphene oxide films by nanosecond laser melting of amorphous carbon on silicon (001) substrates under ambient conditions. Ultrafast quenching from the undercooled melt state above the melting threshold energy density (Ed) of 0.4 J/cm2 leads to the formation of large-area rGO films. The first-order phase transformation of liquid carbon into graphene is triggered by low undercooling at the C melt/silicon interface. The laser-irradiated rGO films exhibit electron mobility of 12.56 cm2/V s and charge carrier concentration of -1.2 × 1021/cm3 at 300 K. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest low disorder and charge transport via 2D Mott variable range hopping between the graphene islands for rGO films. The localization length corresponding to the size of these graphitic domains is 3 nm. The ultrafast regrowth of rGO creates an atomically sharp interface between n-type rGO and p-type amorphous carbon, resulting in p-n junction heterojunction diodes with a turn-on voltage of 0.3 V, rectification ratio of 110@±1.5 V, and activation energy of 0.13 eV under reverse bias. This unique laser processing method solves the problems of traps and defects associated with equilibrium-based rGO fabrication methods, enabling high conductivity and mobility, providing insights into the fundamental mechanism driving laser writing of graphene-based materials on silicon.
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Affiliation(s)
- Siddharth Gupta
- Department of Materials Science and Engineering , North Carolina State University , Centennial Campus , Raleigh , North Carolina 27695-7907 , United States
| | - Jagdish Narayan
- Department of Materials Science and Engineering , North Carolina State University , Centennial Campus , Raleigh , North Carolina 27695-7907 , United States
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41
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Herrero CP, Ramírez R. Nuclear quantum effects in graphene bilayers. J Chem Phys 2019; 150:204707. [DOI: 10.1063/1.5096602] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023] Open
Affiliation(s)
- Carlos P. Herrero
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (CSIC), Campus de Cantoblanco, 28049 Madrid, Spain
| | - Rafael Ramírez
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (CSIC), Campus de Cantoblanco, 28049 Madrid, Spain
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Abstract
Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.
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43
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Current Review on Synthesis, Composites and Multifunctional Properties of Graphene. Top Curr Chem (Cham) 2019; 377:10. [DOI: 10.1007/s41061-019-0235-6] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2018] [Accepted: 02/22/2019] [Indexed: 12/30/2022]
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Cellini F, Gao Y, Riedo E. Å-Indentation for non-destructive elastic moduli measurements of supported ultra-hard ultra-thin films and nanostructures. Sci Rep 2019; 9:4075. [PMID: 30858472 PMCID: PMC6411981 DOI: 10.1038/s41598-019-40636-0] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2018] [Accepted: 02/13/2019] [Indexed: 11/26/2022] Open
Abstract
During conventional nanoindentation measurements, the indentation depths are usually larger than 1-10 nm, which hinders the ability to study ultra-thin films (<10 nm) and supported atomically thin two-dimensional (2D) materials. Here, we discuss the development of modulated Å-indentation to achieve sub-Å indentations depths during force-indentation measurements while also imaging materials with nanoscale resolution. Modulated nanoindentation (MoNI) was originally invented to measure the radial elasticity of multi-walled nanotubes. Now, by using extremely small amplitude oscillations (<<1 Å) at high frequency, and stiff cantilevers, we show how modulated nano/Å-indentation (MoNI/ÅI) enables non-destructive measurements of the contact stiffness and indentation modulus of ultra-thin ultra-stiff films, including CVD diamond films (~1000 GPa stiffness), as well as the transverse modulus of 2D materials. Our analysis demonstrates that in presence of a standard laboratory noise floor, the signal to noise ratio of MoNI/ÅI implemented with a commercial atomic force microscope (AFM) is such that a dynamic range of 80 dB -- achievable with commercial Lock-in amplifiers -- is sufficient to observe superior indentation curves, having indentation depths as small as 0.3 Å, resolution in indentation <0.05 Å, and in normal load <0.5 nN. Being implemented on a standard AFM, this method has the potential for a broad applicability.
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Affiliation(s)
- Filippo Cellini
- Tandon School of Engineering, New York University, Brooklyn, 11201, NY, USA
- Advanced Science Research Center, CUNY Graduate Center, New York, NY, 10031, USA
| | - Yang Gao
- Advanced Science Research Center, CUNY Graduate Center, New York, NY, 10031, USA
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Elisa Riedo
- Tandon School of Engineering, New York University, Brooklyn, 11201, NY, USA.
- Advanced Science Research Center, CUNY Graduate Center, New York, NY, 10031, USA.
- Physics Department, City College of New York, CUNY, New York, NY, 10031, USA.
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
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45
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Wang L, Cai K, Xie YM, Qin QH. Thermal shrinkage and stability of diamondene nanotubes. NANOTECHNOLOGY 2019; 30:075702. [PMID: 30560806 DOI: 10.1088/1361-6528/aaf3e7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
By curving a rectangular diamondene, an sp 2/sp 3 composite carbon film, a diamondene nanotube (DNT) can be formed when the two straight edges are sewn together. In this study, thermal stabilities of DNTs are investigated using molecular dynamics simulation approaches. An interesting thermal shrinkage of damaged DNTs is discovered. Results indicate that DNTs have critical temperatures between 320 K and 350 K. At temperatures higher than the critical value, the interlayer bonds, i.e., the sp 3-sp 3 bonds, may break. The broken ratio of the interlayer bonds mainly depends on the temperature. For the DNT with a high broken ratio of interlayer bonds, it has thermal shrinkage in both the cross section and tube axis. The sp 2-sp 3 bonds in either the inner or the outer surface are much more stable. Even at 900 K, only a few sp 2-sp 3 bonds break. These properties can be used in the design of metamaterials.
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Affiliation(s)
- Lei Wang
- Department of Engineering Mechanics, College of Mechanics and Materials, Hohai University, Nanjing 211100, People's Republic of China
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46
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Ridene M, Najafi A, Flipse K. Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide. NANOMATERIALS 2019; 9:nano9020228. [PMID: 30744002 PMCID: PMC6409591 DOI: 10.3390/nano9020228] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 01/29/2019] [Accepted: 01/30/2019] [Indexed: 11/16/2022]
Abstract
The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer.
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Affiliation(s)
- Mohamed Ridene
- Molecular Materials and Nanosystems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
| | - Ameneh Najafi
- Molecular Materials and Nanosystems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
| | - Kees Flipse
- Molecular Materials and Nanosystems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
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Li G, Mo X, Law WC, Chan KC. Wearable Fluid Capture Devices for Electrochemical Sensing of Sweat. ACS APPLIED MATERIALS & INTERFACES 2019; 11:238-243. [PMID: 30516364 DOI: 10.1021/acsami.8b17419] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Wearable sensing technologies are vital for realizing personalized health monitoring. Noninvasive human sweat sampling is essential for monitoring an individual's physical state using rich physiological data. However, existing wearable sensing technologies lack the controlled capture of body sweat and in performing on-device measurement without inflammatory contact. Herein, we report the development of a wearable sweat-capture device using patterned graphene arrays with controlled superwettability and electrical conductivity for simultaneously capturing and electrochemically measuring sweat droplets. The sweat droplets exhibited strong attachment on the superhydrophilic graphene patterns, even during moderate exercising. The captured sweat droplets present strong electrochemical signals using graphene films as the working electrode and metal pins as the counter electrode arrays assembled on 3D printed holders, at the detection limit of 6 μM for H2O2 sensing. This research enables full-body spatiotemporal mapping of sweat, which is beneficial for a broad range of personalized monitoring applications, such as drug abuse detection, athletics performance optimization, and physiological wellness tracking.
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Affiliation(s)
- Guijun Li
- Advanced Manufacturing Technology Research Centre, Department of Industrial and Systems Engineering , Hong Kong Polytechnic University , Hung Hom , Hong Kong
| | - Xiaoyong Mo
- Advanced Manufacturing Technology Research Centre, Department of Industrial and Systems Engineering , Hong Kong Polytechnic University , Hung Hom , Hong Kong
| | - Wing-Cheung Law
- Advanced Manufacturing Technology Research Centre, Department of Industrial and Systems Engineering , Hong Kong Polytechnic University , Hung Hom , Hong Kong
| | - Kang Cheung Chan
- Advanced Manufacturing Technology Research Centre, Department of Industrial and Systems Engineering , Hong Kong Polytechnic University , Hung Hom , Hong Kong
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48
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Gupta S, Yang JH, Yakobson BI. Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission. NANO LETTERS 2019; 19:408-414. [PMID: 30532982 DOI: 10.1021/acs.nanolett.8b04159] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emission (SPE) by a solid-state source requires presence of a distinct two-level quantum system, usually provided by point defects. Here we note that a number of qualities offered by novel, two-dimensional materials, their all-surface openness and optical transparence, tighter quantum confinement, and reduced charge screening-are advantageous for achieving an ideal SPE. On the basis of first-principles calculations and point-group symmetry analysis, a strategy is proposed to design paramagnetic defect complex with reduced symmetry, meeting all the requirements for SPE: its electronic states are well isolated from the host material bands, belong to a majority spin eigenstate, and can be controllably excited by polarized light. The defect complex is thermodynamically stable and appears feasible for experimental realization to serve as an SPE-source, essential for quantum computing, with ReMoVS in MoS2 as one of the most practical candidates.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Ji-Hui Yang
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Department of Chemistry, and the Smalley Institute , Rice University , Houston , Texas 77005 , United States
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49
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Cao T, Cuffari D, Bongiorno A. First-Principles Calculation of Third-Order Elastic Constants via Numerical Differentiation of the Second Piola-Kirchhoff Stress Tensor. PHYSICAL REVIEW LETTERS 2018; 121:216001. [PMID: 30517818 DOI: 10.1103/physrevlett.121.216001] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2018] [Indexed: 06/09/2023]
Abstract
A general method is presented to calculate from first principles the full set of third-order elastic constants of a material of arbitrary symmetry. The method here illustrated relies on a plane-wave density functional theory scheme to calculate the Cauchy stress and the numerical differentiation of the second Piola-Kirchhoff stress tensor to evaluate the elastic constants. It is shown that finite difference formulas lead to a cancellation of the finite basis set errors, whereas simple solutions are proposed to eliminate numerical errors arising from the use of Fourier interpolation techniques. Applications to diamond, silicon, aluminum, magnesium, graphene, and a graphane conformer give results in excellent agreement with both experiments and previous calculations based on fitting energy density curves, demonstrating both the accuracy and generality of our new methodology to investigate nonlinear elastic behaviors of materials.
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Affiliation(s)
- Tengfei Cao
- Department of Chemistry, College of Staten Island, Staten Island, New York 10314, USA
- Advanced Science Research Center, City University of New York, 85 St. Nicholas Terrace, New York, New York 10031, USA
| | - David Cuffari
- Department of Chemistry, College of Staten Island, Staten Island, New York 10314, USA
- Ph.D. Program in Physics, The Graduate Center of the City University of New York, New York, New York 10016, USA
| | - Angelo Bongiorno
- Department of Chemistry, College of Staten Island, Staten Island, New York 10314, USA
- Advanced Science Research Center, City University of New York, 85 St. Nicholas Terrace, New York, New York 10031, USA
- Ph.D. Program in Physics, The Graduate Center of the City University of New York, New York, New York 10016, USA
- Ph.D. Program in Chemistry, The Graduate Center of the City University of New York, New York, New York 10016, USA
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50
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Qiu L, Li D, Cheng HM. Structural Control of Graphene-Based Materials for Unprecedented Performance. ACS NANO 2018; 12:5085-5092. [PMID: 29882663 DOI: 10.1021/acsnano.8b03792] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recent research on engineering the structure of graphene-based materials has enabled a range of unprecedented properties. In this Perspective, we discuss how these rationally designed graphene-based materials possess exciting features as a result of engineering their structures, including structures of individual graphene sheets, interaction/spacing between sheets, and assembled structures. We also consider the challenges and future opportunities in the fundamental research and practical uses of designed graphene-based materials.
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Affiliation(s)
- Ling Qiu
- Shenzhen Geim Graphene Center (SGC) , Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University , Shenzhen 518055 , China
| | - Dan Li
- Department of Chemical Engineering , The University of Melbourne , Parkville , Victoria 3010 , Australia
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center (SGC) , Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University , Shenzhen 518055 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016 , China
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