A single hole spin with enhanced coherence in natural silicon

A singlet-triplet hole-spin qubit in MOS silicon

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit platform with favourable properties such as fast electrical control and noise-resilient operation at sweet spots. However, commonly observed gate-induced electrostatic disorder, drifts, and hysteresis hinder reproducible tune-up of SiGe-based quantum dot arrays. Here, we study Hall bar and quantum dot devices fabricated on Ge/SiGe heterostructures and present a consistent model for the origin of gate hysteresis and its impact on transport metrics and charge noise. As we push the accumulation voltages more negative, we observe non-monotonous changes in the low-density transport metrics, attributed to the induced gradual filling of a spatially varying density of charge traps at the SiGe-oxide interface. With each gate voltage push, we find local activation of a transient low-frequency charge noise component that completely vanishes again after 30 hours. Our results highlight the resilience of the SiGe material platform to interface-trap-induced disorder and noise and pave the way for reproducible tuning of larger multi-dot systems.

Engineering colloidal semiconductor nanocrystals for quantum information processing

Quantum information processing-which relies on spin defects or single-photon emission-has shown quantum advantage in proof-of-principle experiments including microscopic imaging of electromagnetic fields, strain and temperature in applications ranging from battery research to neuroscience. However, critical gaps remain on the path to wider applications, including a need for improved functionalization, deterministic placement, size homogeneity and greater programmability of multifunctional properties. Colloidal semiconductor nanocrystals can close these gaps in numerous application areas, following years of rapid advances in synthesis and functionalization. In this Review, we specifically focus on three key topics: optical interfaces to long-lived spin states, deterministic placement and delivery for sensing beyond the standard quantum limit, and extensions to multifunctional colloidal quantum circuits.

Valley-Free Silicon Fins Caused by Shear Strain

Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of computational energies, where the quantum information can leak. The energy of the valley states-typically 0.1 meV-depends on hardly controllable atomistic disorder and still constitutes a fundamental limit to the scalability of these architectures. In this work, we introduce designs of complementary metal-oxide-semiconductor (CMOS)-compatible silicon fin field-effect transistors that enhance the energy gap to noncomputational states by more than one order of magnitude. Our devices comprise realistic silicon-germanium nanostructures with a large shear strain, where troublesome valley degrees of freedom are completely removed. The energy of noncomputational states is therefore not affected by unavoidable atomistic disorder and can further be tuned in situ by applied electric fields. Our design ideas are directly applicable to a variety of setups and will offer a blueprint toward silicon-based large-scale quantum processors.

Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Spin qubits defined by valence band hole states are attractive for quantum information processing due to their inherent coupling to electric fields, enabling fast and scalable qubit control. Heavy holes in germanium are particularly promising, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie qubit driving and decoherence remain mostly unclear. Here we report the highly anisotropic heavy-hole g-tensor and its dependence on electric fields, revealing how qubit driving and decoherence originate from electric modulations of the g-tensor. Furthermore, we confirm the predicted Ising-type hyperfine interaction and show that qubit coherence is ultimately limited by 1/f charge noise, where f is the frequency. Finally, operating the qubit at low magnetic field, we measure a dephasing time ofT 2 *  = 17.6 μs, maintaining single-qubit gate fidelities well above 99% even at elevated temperatures of T > 1 K. This understanding of qubit driving and decoherence mechanisms is key towards realizing scalable and highly coherent hole qubit arrays.

Spatially correlated classical and quantum noise in driven qubits

Correlated noise across multiple qubits poses a significant challenge for achieving scalable and fault-tolerant quantum processors. Despite recent experimental efforts to quantify this noise in various qubit architectures, a comprehensive understanding of its role in qubit dynamics remains elusive. Here, we present an analytical study of the dynamics of driven qubits under spatially correlated noise, including both Markovian and non-Markovian noise. Surprisingly, we find that by operating the qubit system at low temperatures, where correlated quantum noise plays an important role, significant long-lived entanglement between qubits can be generated. Importantly, this generation process can be controlled on-demand by turning the qubit driving on and off. On the other hand, we demonstrate that by operating the system at a higher temperature, the crosstalk between qubits induced by the correlated noise is unexpectedly suppressed. We finally reveal the impact of spatio-temporally correlated 1/f noise on the decoherence rate, and how its temporal correlations restore lost entanglement. Our findings provide critical insights into not only suppressing crosstalk between qubits caused by correlated noise but also in effectively leveraging such noise as a beneficial resource for controlled entanglement generation.

The quantum house of cards

Quantum computers have been proposed to solve a number of important problems such as discovering new drugs, new catalysts for fertilizer production, breaking encryption protocols, optimizing financial portfolios, or implementing new artificial intelligence applications. Yet, to date, a simple task such as multiplying 3 by 5 is beyond existing quantum hardware. This article examines the difficulties that would need to be solved for quantum computers to live up to their promises. I discuss the whole stack of technologies that has been envisioned to build a quantum computer from the top layers (the actual algorithms and associated applications) down to the very bottom ones (the quantum hardware, its control electronics, cryogeny, etc.) while not forgetting the crucial intermediate layer of quantum error correction.

Phase-Driving Hole Spin Qubits

The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism mediated by the strong spin-orbit interactions in hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase-driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly nontrivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor, we demonstrate a controllable suppression of resonant Rabi oscillations and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase-driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors.

Hole-Spin Driving by Strain-Induced Spin-Orbit Interactions

Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains build up spontaneously in the devices due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by 1 order of magnitude by shear strain gradients as small as 3×10^{-6}  nm^{-1} within the dots. This underlines that spins in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics.

Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold

Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbor pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology.

Coherence Characteristics of a GaAs Single Heavy-Hole Spin Qubit Using a Modified Single-Shot Latching Readout Technique

We present an experimental study of the coherence properties of a single heavy-hole spin qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We use a modified spin-readout latching technique in which the second quantum dot serves both as an auxiliary element for a fast spin-dependent readout within a 200 ns time window and as a register for storing the spin-state information. To manipulate the single-spin qubit, we apply sequences of microwave bursts of various amplitudes and durations to make Rabi, Ramsey, Hahn-echo, and CPMG measurements. As a result of the qubit manipulation protocols combined with the latching spin readout, we determine and discuss the achieved qubit coherence times: T1, TRabi, T2*, and T2CPMG vs. microwave excitation amplitude, detuning, and additional relevant parameters.

Strong coupling between a photon and a hole spin in silicon

Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbour quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible metal-oxide-semiconductor fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330 MHz, largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Holes in silicon quantum dots are receiving attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. We address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance. We achieve smooth control of the interdot coupling rate over 1 order of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path toward improving the quality and controllability of hole spin-qubits.

Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits

We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.