Integrated multi-wavelength control of an ion qubit

Low cross-talk optical addressing of trapped-ion qubits using a novel integrated photonic chip

Individual optical addressing in chains of trapped atomic ions requires the generation of many small, closely spaced beams with low cross-talk. Furthermore, implementing parallel operations necessitates phase, frequency, and amplitude control of each individual beam. Here, we present a scalable method for achieving all of these capabilities using a high-performance integrated photonic chip coupled to a network of optical fibre components. The chip design results in very low cross-talk between neighbouring channels even at the micrometre-scale spacing by implementing a very high refractive index contrast between the channel core and cladding. Furthermore, the photonic chip manufacturing procedure is highly flexible, allowing for the creation of devices with an arbitrary number of channels as well as non-uniform channel spacing at the chip output. We present the system used to integrate the chip within our ion trap apparatus and characterise the performance of the full individual addressing setup using a single trapped ion as a light-field sensor. Our measurements showed intensity cross-talk below ~10-3 across the chip, with minimum observed cross-talk as low as ~10-5.

Investigation of Q degradation in low-loss Si3N4 from heterogeneous laser integration

High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here, Si3N4 resonator intrinsic Qs over 100 million are demonstrated on a fully integrated heterogeneous laser platform. Qi is measured throughout laser processing steps, showing degradation down to 50 million from dry etching, metal evaporation, and ion implant steps, and controllable recovery to over 100 million from annealing at 250 ∘C-350 ∘C.

Actively tunable laser action in GeSn nanomechanical oscillators

Mechanical forces induced by high-speed oscillations provide an elegant way to dynamically alter the fundamental properties of materials such as refractive index, absorption coefficient and gain dynamics. Although the precise control of mechanical oscillation has been well developed in the past decades, the notion of dynamic mechanical forces has not been harnessed for developing tunable lasers. Here we demonstrate actively tunable mid-infrared laser action in group-IV nanomechanical oscillators with a compact form factor. A suspended GeSn cantilever nanobeam on a Si substrate is resonantly driven by radio-frequency waves. Electrically controlled mechanical oscillation induces elastic strain that periodically varies with time in the GeSn nanobeam, enabling actively tunable lasing emission at >2 μm wavelengths. By utilizing mechanical resonances in the radio frequency as a driving mechanism, this work presents wide-range mid-infrared tunable lasers with ultralow tuning power consumption.

Individual Addressing and State Readout of Trapped Ions Utilizing Radio-Frequency Micromotion

Excess "micromotion" of trapped ions due to the residual radio-frequency (rf) trapping field at their location is often undesirable and is usually carefully minimized. Here, we induce precise amounts of excess micromotion on individual ions by adjusting the local static electric field they experience. Micromotion modulates the coupling of an ion to laser fields, ideally tuning it from its maximum value to zero as the ion is moved away from the trap's rf null. We use tunable micromotion to vary the Rabi frequency of stimulated Raman transitions over two orders of magnitude, and to individually control the rates of resonant fluorescence from three ions under global laser illumination without any changes to the driving light fields. The technique is amenable to situations where addressing individual ions with focused laser beams is challenging, such as tightly packed linear ion strings or two-dimensional ion arrays illuminated from the side.

Anneal-free ultra-low loss silicon nitride integrated photonics

Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m-1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m-1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.

Silicon-photonics-enabled chip-based 3D printer

Imagine if it were possible to create 3D objects in the palm of your hand within seconds using only a single photonic chip. Although 3D printing has revolutionized the way we create in nearly every aspect of modern society, current 3D printers rely on large and complex mechanical systems to enable layer-by-layer addition of material. This limits print speed, resolution, portability, form factor, and material complexity. Although there have been recent efforts in developing novel photocuring-based 3D printers that utilize light to transform matter from liquid resins to solid objects using advanced methods, they remain reliant on bulky and complex mechanical systems. To address these limitations, we combine the fields of silicon photonics and photochemistry to propose the first chip-based 3D printer. The proposed system consists of only a single millimeter-scale photonic chip without any moving parts that emits reconfigurable visible-light holograms up into a simple stationary resin well to enable non-mechanical 3D printing. Furthermore, we experimentally demonstrate a stereolithography-inspired proof-of-concept version of the chip-based 3D printer using a visible-light beam-steering integrated optical phased array and visible-light-curable resin, showing 3D printing using a chip-based system for the first time. This work demonstrates the first steps towards a highly-compact, portable, and low-cost solution for the next generation of 3D printers.

Precise mode control of laser-written waveguides for broadband, low-dispersion 3D integrated optics

Three-dimensional (3D) glass chips are promising waveguide platforms for building hybrid 3D photonic circuits due to their 3D topological capabilities, large transparent windows, and low coupling dispersion. At present, the key challenge in scaling down a benchtop optical system to a glass chip is the lack of precise methods for controlling the mode field and optical coupling of 3D waveguide circuits. Here, we propose an overlap-controlled multi-scan (OCMS) method based on laser-direct lithography that allows customizing the refractive index profile of 3D waveguides with high spatial precision in a variety of glasses. On the basis of this method, we achieve variable mode-field distribution, robust and broadband coupling, and thereby demonstrate dispersionless LP21-mode conversion of supercontinuum pulses with the largest deviation of <0.1 dB in coupling ratios on 210 nm broadband. This approach provides a route to achieve ultra-broadband and low-dispersion coupling in 3D photonic circuits, with overwhelming advantages over conventional planar waveguide-optic platforms for on-chip transmission and manipulation of ultrashort laser pulses and broadband supercontinuum.

Heterogeneous sapphire-supported low-loss photonic platform

Sapphire is a promising wideband substrate material for visible photonics. It is a common growth substrate for III-nitride light-emitting diodes and laser structures. Doped sapphires are important gain media foundational to the development of titanium-sapphire and ruby lasers. For lasers operating at visible and near-infrared wavelengths, a photonic platform that minimizes loss while maximizing gain material overlap is crucial. Here, we introduce a novel low-loss waveguiding strategy that establishes high-performance integrated photonics on sapphire substrates. This platform achieves a high intrinsic quality factor of 5.6 million near 780 nm and features direct compatibility with a range of solid-state laser gain media.

Mechanically-flexible wafer-scale integrated-photonics fabrication platform

The field of integrated photonics has advanced rapidly due to wafer-scale fabrication, with integrated-photonics platforms and fabrication processes being demonstrated at both infrared and visible wavelengths. However, these demonstrations have primarily focused on fabrication processes on silicon substrates that result in rigid photonic wafers and chips, which limit the potential application spaces. There are many application areas that would benefit from mechanically-flexible integrated-photonics wafers, such as wearable healthcare monitors and pliable displays. Although there have been demonstrations of mechanically-flexible photonics fabrication, they have been limited to fabrication processes on the individual device or chip scale, which limits scalability. In this paper, we propose, develop, and experimentally characterize the first 300-mm wafer-scale platform and fabrication process that results in mechanically-flexible photonic wafers and chips. First, we develop and describe the 300-mm wafer-scale CMOS-compatible flexible platform and fabrication process. Next, we experimentally demonstrate key optical functionality at visible wavelengths, including chip coupling, waveguide routing, and passive devices. Then, we perform a bend-durability study to characterize the mechanical flexibility of the photonic chips, demonstrating bending a single chip 2000 times down to a bend diameter of 0.5 inch with no degradation in the optical performance. Finally, we experimentally characterize polarization-rotation effects induced by bending the flexible photonic chips. This work will enable the field of integrated photonics to advance into new application areas that require flexible photonic chips.

Multi-site integrated optical addressing of trapped ions

One of the most effective ways to advance the performance of quantum computers and quantum sensors is to increase the number of qubits or quantum resources in the system. A major technical challenge that must be solved to realize this goal for trapped-ion systems is scaling the delivery of optical signals to many individual ions. In this paper we demonstrate an approach employing waveguides and multi-mode interferometer splitters to optically address multiple 171Yb+ ions in a surface trap by delivering all wavelengths required for full qubit control. Measurements of hyperfine spectra and Rabi flopping were performed on the E2 clock transition, using integrated waveguides for delivering the light needed for Doppler cooling, state preparation, coherent operations, and detection. We describe the use of splitters to address multiple ions using a single optical input per wavelength and use them to demonstrate simultaneous Rabi flopping on two different transitions occurring at distinct trap sites. This work represents an important step towards the realization of scalable integrated photonics for atomic clocks and trapped-ion quantum information systems.

Penning micro-trap for quantum computing

Trapped ions in radio-frequency traps are among the leading approaches for realizing quantum computers, because of high-fidelity quantum gates and long coherence times1-3. However, the use of radio-frequencies presents several challenges to scaling, including requiring compatibility of chips with high voltages4, managing power dissipation5 and restricting transport and placement of ions6. Here we realize a micro-fabricated Penning ion trap that removes these restrictions by replacing the radio-frequency field with a 3 T magnetic field. We demonstrate full quantum control of an ion in this setting, as well as the ability to transport the ion arbitrarily in the trapping plane above the chip. This unique feature of the Penning micro-trap approach opens up a modification of the quantum charge-coupled device architecture with improved connectivity and flexibility, facilitating the realization of large-scale trapped-ion quantum computing, quantum simulation and quantum sensing.

Numerical analysis of on-chip acousto-optic modulators for visible wavelengths

On-chip acousto-optic modulators that operate at an optical wavelength of 780 nm and a microwave frequency of 6.835 GHz are proposed. The modulators are based on a lithium-niobate-on-sapphire platform and efficiently excite surface acoustic waves and exhibit strong interactions with tightly confined optical modes in waveguides. In particular, a high-efficiency phase modulator and single-sideband mode converter are designed. We found that for both microwave and optical wavelengths below 1 µm, the interactions at the cross-sections of photonic waveguides are sensitive to the waveguide width and are significantly different from those in previous studies. Our designed devices have small footprints and high efficiencies, making them suitable for controlling rubidium atoms and realizing hybrid photonic-atomic chips. Furthermore, our devices have the potential to extend the acousto-optic modulators to other visible wavelengths for other atom transitions and for visible light applications, including imaging and sensing.

Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum

Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film's deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform's fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.

Integrated Manipulation and Addressing of Spin Defect in Diamond

Scalable and addressable integrated manipulation of qubits is crucial for practical quantum information applications. Different waveguides have been used to transport the optical and electrical driving pulses, which are usually required for qubit manipulation. However, the separated multifields may limit the compactness and efficiency of manipulation and introduce unwanted perturbation. Here, we develop a tapered fiber-nanowire-electrode hybrid structure to realize integrated optical and microwave manipulation of solid-state spins at nanoscale. Visible light and microwave driving pulses are simultaneously transported and concentrated along an Ag nanowire. Studied with spin defects in diamond, the results show that the different driving fields are aligned with high accuracy. The spatially selective spin manipulation is realized. And the frequency-scanning optically detected magnetic resonance (ODMR) of spin qubits is measured, illustrating the potential for portable quantum sensing. Our work provides a new scheme for developing compact, miniaturized quantum sensors and quantum information processing devices.

Rapid exchange cooling with trapped ions

The trapped-ion quantum charge-coupled device (QCCD) architecture is a leading candidate for advanced quantum information processing. In current QCCD implementations, imperfect ion transport and anomalous heating can excite ion motion during a calculation. To counteract this, intermediate cooling is necessary to maintain high-fidelity gate performance. Cooling the computational ions sympathetically with ions of another species, a commonly employed strategy, creates a significant runtime bottleneck. Here, we demonstrate a different approach we call exchange cooling. Unlike sympathetic cooling, exchange cooling does not require trapping two different atomic species. The protocol introduces a bank of "coolant" ions which are repeatedly laser cooled. A computational ion can then be cooled by transporting a coolant ion into its proximity. We test this concept experimentally with two 40Ca+ ions, executing the necessary transport in 107 μs, an order of magnitude faster than typical sympathetic cooling durations. We remove over 96%, and as many as 102(5) quanta, of axial motional energy from the computational ion. We verify that re-cooling the coolant ion does not decohere the computational ion. This approach validates the feasibility of a single-species QCCD processor, capable of fast quantum simulation and computation.

Hyperband electro-optic modulator based on a two-pulley coupled lithium niobate racetrack resonator

Integrated optical modulators (IOMs) are crucial components of on-chip photonic circuits. However, most conventional IOMs are restricted to specific spectral bands. Here, we leveraged the wide transparency window of lithium niobate in conjunction with the two-pulley coupled resonator method. This approach led to the development of a hyperband electro-optic (EO) modulator that operates over an expansive spectral range from 775 to 1550 nm on a single device. The demonstrated EO modulator exhibits half-wave voltage-length products of 0.25, 0.93, and 0.68 V·cm at wavelengths of 1539.50, 969.70, and 775.17 nm, respectively.

Breaking the Entangling Gate Speed Limit for Trapped-Ion Qubits Using a Phase-Stable Standing Wave

All laser-driven entangling operations for trapped-ion qubits have hitherto been performed without control of the optical phase of the light field, which precludes independent tuning of the carrier and motional coupling. By placing ^{88}Sr^{+} ions in a λ=674  nm standing wave, whose relative position is controlled to ≈λ/100, we suppress the carrier coupling by a factor of 18, while coherently enhancing the spin-motion coupling. We experimentally demonstrate that the off-resonant carrier coupling imposes a speed limit for conventional traveling-wave Mølmer-Sørensen gates; we use the standing wave to surpass this limit and achieve a gate duration of 15  μs, restricted by the available laser power.

Water-Resistant Subwavelength Perovskite Lasing from Transparent Silica-Based Nanocavity

Great research efforts are devoted to exploring the miniaturization of chip-scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary-performance subwavelength-scale perovskite vertical cavity laser with all-transparent SiO2 cavity, whose cavity is ultra-simple and composed of only two parallel SiO2 plates. By introducing a ligand-assisted thermally co-evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO2 . Benefitting from their high-refractive-index contrast, low-threshold, high-quality factor, and single-mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long-range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra-stable water-resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on-chip lasers compatible with Si photonics.

High performance on-chip polarization beam splitter at visible wavelengths based on a silicon nitride small-sized ridge waveguide

Due to sensitive scaling of the wavelength and the visible-light absorption properties with the device dimension, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at the visible wavelengths. In this work, a simple and small polarization beam splitter (PBS) for a broad visible-light band, using a tailored silicon nitride (Si3N4) ridge waveguide, is presented, which is based on the distinct optical distribution of two fundamental orthogonal polarized modes in the ridge waveguide. The bending loss for different bending radii and the optical coupling properties of the fundamental modes for different Si3N4 ridge waveguide configurations are analyzed. A PBS composed of a bending ridge waveguide structure and a triple-waveguide directional coupler was fabricated on the Si3N4 thin film. The TM excitation of the device based on a bending ridge waveguide structure shows a polarization extinction ratio (PER) of ≥ 20 dB with 33 nm bandwidth (624-657 nm) and insertion loss (IL) ≤ 1 dB at the through port. The TE excitation of the device, based on a triple-waveguide directional coupler with coupling efficiency distinction between the TE0 and TM0 modes, shows a PER of ≥ 18 dB with 50 nm bandwidth (580-630 nm) and insertion loss (IL) ≤ 1 dB at the cross port. The on-chip Si3N4 PBS device is found to possess the highest known PER at a visible broadband range and small (43 µm) footprint. It should be useful for novel photonic circuit designs and further exploration of Si3N4 PBSs.

Ultra-high Q alumina optical microresonators in the UV and blue bands

UV and visible photonics enable applications ranging from spectroscopic sensing to communication and quantum information processing. Photonics structures in these wavelength regimes, however, tend to experience higher loss than their IR counterpart. Particularly in the near-UV band, on-chip optical microresonators have not yet achieved a quality factor beyond 1 million. Here, we report ultra-low-loss photonic waveguides and resonators patterned from alumina thin films prepared by a highly scalable atomic layer deposition process. We demonstrate ultra high Q factor of 1.5×106 at 390 nm, a record value at UV bands, and 1.9×106 at 488.5 nm.

Helicity and Polarization Gradient Optical Trapping in Evanescent Fields

Optical traps using nonconservative forces instead of conservative intensity-gradient forces expand the trap parameter space. Existing traps with nonconservative helicity-dependent forces are limited to chiral particles and fields with helicity gradients. We relax these constraints by proposing helicity and polarization gradient optical trapping of achiral particles in evanescent fields. We further propose an optical switching system in which a microsphere is trapped and optically manipulated around a microfiber using polarization gradients. Our Letter deepens the understanding of light-matter interactions in polarization gradient fields and expands the range of compatible particles and stable trapping fields.

Development of mixed pitch grating for the optical addressing of trapped Sr+ ion with data analysis techniques

Mixed pitch gratings are developed for the optical addressing of trapped ⁸⁸Sr⁺ ion by means of simulation and experimental measurement approaches. Meanwhile, Python-based data analysis techniques were developed to analyze simulated and measured beam profiles. A fixed pitch grating with a pitch of 1.2 µm was used as a reference, and a mixed pitch grating with pitches of 1.1/1.2 µm of various ratios are investigated. The Python-based data analysis codes demonstrates highly automated capability in processing both simulated and measured beam profile data to compute key parameters, including beam waist and Gaussian fitting. Mixed pitch grating delivers light beam with smaller beam waist (17.4 µm) compared to the fixed pitch grating (26.4 µm), exhibiting ∼34% beam waist reduction.

Coherent Control of Trapped-Ion Qubits with Localized Electric Fields

We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multizone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localized to each zone. We demonstrate this interaction on a single ion using both laser-based and magnetic-field gradients in a surface-electrode ion trap, and measure the localization of the electric field.

Polarization Splitting at Visible Wavelengths with the Rutile TiO2 Ridge Waveguide

On-chip polarization control is in high demand for novel integrated photonic applications such as polarization division multiplexing and quantum communications. However, due to the sensitive scaling of the device dimension with wavelength and the visible-light absorption properties, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at visible wavelengths. In this paper, a new polarization-splitting mechanism based on energy distributions of the fundamental polarized modes in the r-TiO₂ ridge waveguide is investigated. The bending loss for different bending radii and the optical coupling properties of the fundamental modes in different r-TiO₂ ridge waveguide configurations are analyzed. In particular, a polarization splitter with a high extinction ratio operating at visible wavelengths based on directional couplers (DCs) in the r-TiO₂ ridge waveguide is proposed. Polarization-selective filters based on micro-ring resonators (MRRs) with resonances of only TE or TM polarizations are designed and operated. Our results show that polarization-splitters for visible wavelengths with a high extinction ratio in DC or MRR configurations can be achieved with a simple r-TiO₂ ridge waveguide structure.

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for optical feedback and mode selection resulting in laser self-injection locking with narrow emission linewidth. Multiple group III-nitride (III-N) based photonic integrated circuit chips with different waveguide designs including single-crystalline AlN, AlGaN, and GaN were developed and characterized. Single-frequency laser operation was demonstrated for all studied waveguide core materials. The best side-mode suppression ratio was determined to be ∼36 dB at 412 nm with a single-frequency laser emission linewidth of only 3.8 MHz at 461 nm. The performance metrics of this novel, to the best of our knowledge, type of laser suggest potential implementation in next-generation, portable quantum systems.

Photonic integrated beam delivery for a rubidium 3D magneto-optical trap

Cold atoms are important for precision atomic applications including timekeeping and sensing. The 3D magneto-optical trap (3D-MOT), used to produce cold atoms, will benefit from photonic integration to improve reliability and reduce size, weight, and cost. These traps require the delivery of multiple, large area, collimated laser beams to an atomic vacuum cell. Yet, to date, beam delivery using an integrated waveguide approach has remained elusive. Here we report the demonstration of a ⁸⁷Rb 3D-MOT using a fiber-coupled photonic integrated circuit to deliver all beams to cool and trap > 1 ×10⁶ atoms to near 200 μK. The silicon nitride photonic circuit transforms fiber-coupled 780 nm cooling and repump light via waveguides to three mm-width non-diverging free-space cooling and repump beams directly to the rubidium cell. This planar, CMOS foundry-compatible integrated beam delivery is compatible with other components, such as lasers and modulators, promising system-on-chip solutions for cold atom applications.

Microcantilever-integrated photonic circuits for broadband laser beam scanning

Laser beam scanning is central to many applications, including displays, microscopy, three-dimensional mapping, and quantum information. Reducing the scanners to microchip form factors has spurred the development of very-large-scale photonic integrated circuits of optical phased arrays and focal plane switched arrays. An outstanding challenge remains to simultaneously achieve a compact footprint, broad wavelength operation, and low power consumption. Here, we introduce a laser beam scanner that meets these requirements. Using microcantilevers embedded with silicon nitride nanophotonic circuitry, we demonstrate broadband, one- and two-dimensional steering of light with wavelengths from 410 nm to 700 nm. The microcantilevers have ultracompact ~0.1 mm² areas, consume ~31 to 46 mW of power, are simple to control, and emit a single light beam. The microcantilevers are monolithically integrated in an active photonic platform on 200-mm silicon wafers. The microcantilever-integrated photonic circuits miniaturize and simplify light projectors to enable versatile, power-efficient, and broadband laser scanner microchips.

Micro-dispenser-based optical packaging scheme for grating couplers

Due to their sub-millimeter spatial resolution, ink-based additive manufacturing tools are typically considered less attractive than nanophotonics. Among these tools, precision micro-dispensers with sub-nanoliter volumetric control offer the finest spatial resolution: down to 50 µm. Within a sub-second, a flawless, surface-tension-driven spherical shape of the dielectric dot is formed as a self-assembled µlens. When combined with dispersive nanophotonic structures defined on a silicon-on-insulator substrate, we show that the dispensed dielectric µlenses [numerical aperture (NA) = 0.36] engineer the angular field distribution of vertically coupled nanostructures. The µlenses improve the angular tolerance for the input and reduces the angular spread of the output beam in the far field. The micro-dispenser is fast, scalable, and back-end-of-line compatible, allowing geometric-offset-caused efficiency reductions and center wavelength drift to be easily fixed. The design concept is experimentally verified by comparing several exemplary grating couplers with and without a µlens on top. A difference of less than 1 dB between incident angles of 7° and 14° is observed in the index-matched µlens, while the reference grating coupler shows around 5 dB contrast.

Metasurfaces on silicon photonic waveguides for simultaneous emission phase and amplitude control

Chip-scale photonic systems that manipulate free-space emission have recently attracted attention for applications such as free-space optical communications and solid-state LiDAR. Silicon photonics, as a leading platform for chip-scale integration, needs to offer more versatile control of free-space emission. Here we integrate metasurfaces on silicon photonic waveguides to generate free-space emission with controlled phase and amplitude profiles. We demonstrate experimentally structured beams, including a focused Gaussian beam and a Hermite-Gaussian TEM₁₀ beam, as well as holographic image projections. Our approach is monolithic and CMOS-compatible. The simultaneous phase and amplitude control enable more faithful generation of structured beams and speckle-reduced projection of holographic images.

Integrating planar photonics for multi-beam generation and atomic clock packaging on chip

The commercialization of atomic technologies requires replacing laboratory-scale laser setups with compact and manufacturable optical platforms. Complex arrangements of free-space beams can be generated on chip through a combination of integrated photonics and metasurface optics. In this work, we combine these two technologies using flip-chip bonding and demonstrate an integrated optical architecture for realizing a compact strontium atomic clock. Our planar design includes twelve beams in two co-aligned magneto-optical traps. These beams are directed above the chip to intersect at a central location with diameters as large as 1 cm. Our design also includes two co-propagating beams at lattice and clock wavelengths. These beams emit collinearly and vertically to probe the center of the magneto-optical trap, where they will have diameters of ≈100 µm. With these devices we demonstrate that our integrated photonic platform is scalable to an arbitrary number of beams, each with different wavelengths, geometries, and polarizations.

Control of an Atomic Quadrupole Transition in a Phase-Stable Standing Wave

Using a single calcium ion confined in a surface-electrode trap, we study the interaction of electric quadrupole transitions with a passively phase-stable optical standing wave field sourced by photonics integrated within the trap. We characterize the optical fields through spatial mapping of the Rabi frequencies of both carrier and motional sideband transitions as well as ac Stark shifts. Our measurements demonstrate the ability to engineer favorable combinations of sideband and carrier Rabi frequency as well as ac Stark shifts for specific tasks in quantum state control and metrology.

Compact sub-hertz linewidth laser enabled by self-injection lock to a sub-milliliter FP cavity

A narrow linewidth laser (NLL) of high frequency stability and small form factor is essential to enable applications in long-range sensing, quantum information, and atomic clocks. Various high performance NLLs have been demonstrated by Pound-Drever-Hall (PDH) lock or self-injection lock (SIL) of a seed laser to a vacuum-stabilized Fabry-Perot (FP) cavity of ultrahigh quality (Q) factor. However, they are often complicated lab setups due to the sophisticated stabilizing system and locking electronics. Here we report a compact NLL of 67-mL volume, realized by SIL of a diode laser to a miniature FP cavity of 7.7 × 10⁸ Q and 0.5-mL volume, bypassing table-size vacuum as well as thermal and vibration isolation. We characterized the NLL with a self-delayed heterodyne system, where the Lorentzian linewidth reaches 60 mHz and the integrated linewidth is ∼80 Hz. The frequency noise performance exceeds that of commercial NLLs and recently reported hybrid-integrated NLL realized by SIL to high-Q on-chip ring resonators. Our work marks a major step toward a field-deployable NLL of superior performance using an ultrahigh-Q FP cavity.

Out-of-plane beam shaping with UV-written tilted Bragg gratings for beam delivery on quantum chips

We theoretically and numerically investigate the performance of tilted Bragg gratings in planar waveguides, fabricated by direct UV writing in photosensitive silica, to couple light out of a chip. An analytic expression is derived for the coupling efficiency and validated numerically by finite element simulations. Using the analytic result, we can design gratings to generate output beams in free space of any specific shape and calculate their overall power coupling efficiency. Our simulations indicate that for currently achievable grating index contrasts devices of millimeter length are most suitable for this technology.

Chip-based laser with 1-hertz integrated linewidth

Lasers with hertz linewidths at time scales of seconds are critical for metrology, timekeeping, and manipulation of quantum systems. Such frequency stability relies on bulk-optic lasers and reference cavities, where increased size is leveraged to reduce noise but with the trade-off of cost, hand assembly, and limited applications. Alternatively, planar waveguide-based lasers enjoy complementary metal-oxide semiconductor scalability yet are fundamentally limited from achieving hertz linewidths by stochastic noise and thermal sensitivity. In this work, we demonstrate a laser system with a 1-s linewidth of 1.1 Hz and fractional frequency instability below 10^-14 to 1 s. This low-noise performance leverages integrated lasers together with an 8-ml vacuum-gap cavity using microfabricated mirrors. All critical components are lithographically defined on planar substrates, holding potential for high-volume manufacturing. Consequently, this work provides an important advance toward compact lasers with hertz linewidths for portable optical clocks, radio frequency photonic oscillators, and related communication and navigation systems.

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of >60% across a record wavelength span from λ ~ 400 nm to ~640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 ± 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Integrated photonics has profoundly affected a wide range of technologies underpinning modern society1-4. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency5,6. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry7,8. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III-V materials with silicon nitride waveguides on Si wafers. Using this technology, we present a fully integrated PIC at photon energies greater than the bandgap of silicon, demonstrating essential photonic building blocks, including lasers, amplifiers, photodetectors, modulators and passives, all operating at submicrometre wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high-temperature performance and kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.

High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450  μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz^2/3 and 73.8 dB·Hz^2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Multi-layer inverse design of vertical grating couplers for high-density, commercial foundry interconnects

Density-based topology optimization is used to design large-scale, multi-layer grating couplers that comply with commercial foundry fabrication constraints while simultaneously providing beam profiles that efficiently couple to a single-mode optical fiber without additional optics. Specifically, we describe the design process and experimentally demonstrate both single- and dual-polarization grating couplers that couple at normal incidence (0° from the normal) with low backreflections (-13.7 dB and -15.4 dB at the center wavelength), broad 3 dB bandwidths (75 nm and 89 nm), and standard coupling efficiencies (-4.7 dB and -7.0 dB). The dual-polarization grating couplers exhibit over 30 dB of polarization extinction across the entire band. The devices were fabricated on the GlobalFoundries 45CLO CMOS platform and characterized across three separate wafers. This new design approach produces distinct features for multiple foundry layers and yields emitters with arbitrary, user-specified far-field profiles.

Design of scalable metalens array for optical addressing

Large-scale trapped-ion quantum computers hold great promise to outperform classical computers and are crucially desirable for finance, pharmaceutical industry, fundamental chemistry and other fields. Currently, a big challenge for trapped-ion quantum computers is the poor scalability mainly brought by the optical elements that are used for optical addressing. Metasurfaces provide a promising solution due to their excellent flexibility and integration ability. Here, we propose and numerically demonstrate a scalable off-axis metalens array for optical addressing working at the wavelength of 350 nm. Metalens arrays designed for x linearly polarized and left circularly polarized light respectively can focus the collimated addressing beam array into a compact focused spot array with spot spacing of 5 μm, featuring crosstalk below 0.82%.

Amorphous-silicon visible-light detector integrated on silicon nitride waveguides

Visible-light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging, and displays. Among the existing photonic platforms, high-index-contrast silicon nitride (Si₃N₄) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this Letter, we present a semi-transparent in-line power monitor integrated on Si₃N₄ waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous-silicon (a-Si:H) film that is evanescently coupled to an optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of -45 dBm, and a sub-µs time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light Si₃N₄ PICs.

Two-dimensional quasi periodic structures for large-scale light out-coupling with amplitude, phase and polarization control

Chip-scale light-atom interactions are vital for the miniaturization of atomic sensing systems, including clocks, magnetometers, gyroscopes and more. Combining as many photonic elements as possible onto a photonic chip greatly reduces size and power consumption, where the critical elements are those interfacing between the 2D circuit and the 3D vapor cell. We introduce a new design method for large scale two-dimensional converter structures, enabling out-coupling of radiation from the photonic chip into the atomic medium. These structures allow light intensity and phase spatial distribution and polarization control, without external light-manipulating elements. Large, 100 × 100 µm² structures were designed generating low divergence optical beams with high degree of circular polarization. Simulations obtain mean circular polarization contrast of better than 30 dB.

Power-efficient silicon nitride thermo-optic phase shifters for visible light

We demonstrate power-efficient, thermo-optic, silicon nitride waveguide phase shifters for blue, green, and yellow wavelengths. The phase shifters operated with low power consumption due to a suspended structure and multi-pass waveguide design. The devices were fabricated on 200-mm silicon wafers using deep ultraviolet lithography as part of an active visible-light integrated photonics platform. The measured power consumption to achieve a π phase shift (averaged over multiple devices) was 0.78, 0.93, 1.09, and 1.20 mW at wavelengths of 445, 488, 532, and 561 nm, respectively. The phase shifters were integrated into Mach-Zehnder interferometer switches, and 10 - 90% rise(fall) times of about 570(590) μs were measured.

Ultra-low loss visible light waveguides for integrated atomic, molecular, and quantum photonics

Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si₃N₄ platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.

Bioinspired Molecular Qubits and Nanoparticle Ensembles That Could Be Initialized, Manipulated, and Read Out under Mild Conditions

Quantum computation and quantum information processing are emerging technologies that have potential to overcome the physical limitation of traditional computation systems. Present quantum systems based on photons, atoms, and molecules, however, all face challenges such as short coherence time, requirement of ultralow temperature and/or high vacuum, and lack of scalability. We report new types of molecular qubits and nanoparticle ensembles based on thermally controllable transformation between J-aggregation and monomeric states of molecular chromophores using pyrrolopyrrole cyanine tethered with polymeric chains such as polycaprolactones as an example. Such supramolecular quantum systems, resembling some feature of light harvesting complexes in photosynthesis, provide new opportunities for manipulating quantum information under mild conditions, which do not require complicated ultracooling and/or high vacuum often involved in superconducting qubits or Rydberg atoms for quantum computation and information processing.

Multicore fibers with 10 and 16 single-mode cores for the visible spectrum

We report multicore fibers (MCFs) with 10 and 16 linearly distributed cores with single-mode operation in the visible spectrum. The average propagation loss of the cores is 0.06 dB/m at λ = 445 nm and < 0.03 dB/m at wavelengths longer than 488 nm. The low inter-core crosstalk and nearly identical performance of the cores make these MCFs suitable for spatial division multiplexing in the visible spectrum. As a proof-of-concept application, one of the MCFs was coupled to an implantable neural probe to spatially address light-emitting gratings on the probe.

Chip integrated photonics for ion based quantum computing

Ion traps are a promising platform for the realisation of high-performance quantum computers. To enable the future scalability of these systems, integrated photonic solutions for guiding and manipulating the laser light at chip level are a major step. Such passive optical components offer the great advantage of providing beam radii in the μm range at the location of the ions without increasing the number of bulk optics. Different wavelengths, from UV to NIR, as well as laser beam properties, such as angle or polarisation, are required for different cooling and readout processes of ions. We present simulation results for different optical photonic components, such as grating outcouplers or waveguide splitters and their applications on ion trap chips. Furthermore, we will introduce the experimental setup for the optical characterisation of the fabricated structures.

Integrated photonics enables continuous-beam electron phase modulation

Integrated photonics facilitates extensive control over fundamental light-matter interactions in manifold quantum systems including atoms1, trapped ions2,3, quantum dots4 and defect centres5. Ultrafast electron microscopy has recently made free-electron beams the subject of laser-based quantum manipulation and characterization6-11, enabling the observation of free-electron quantum walks12-14, attosecond electron pulses10,15-17 and holographic electromagnetic imaging18. Chip-based photonics19,20 promises unique applications in nanoscale quantum control and sensing but remains to be realized in electron microscopy. Here we merge integrated photonics with electron microscopy, demonstrating coherent phase modulation of a continuous electron beam using a silicon nitride microresonator. The high-finesse (Q0 ≈ 106) cavity enhancement and a waveguide designed for phase matching lead to efficient electron-light scattering at extremely low, continuous-wave optical powers. Specifically, we fully deplete the initial electron state at a cavity-coupled power of only 5.35 microwatts and generate >500 electron energy sidebands for several milliwatts. Moreover, we probe unidirectional intracavity fields with microelectronvolt resolution in electron-energy-gain spectroscopy21. The fibre-coupled photonic structures feature single-optical-mode electron-light interaction with full control over the input and output light. This approach establishes a versatile and highly efficient framework for enhanced electron beam control in the context of laser phase plates22, beam modulators and continuous-wave attosecond pulse trains23, resonantly enhanced spectroscopy24-26 and dielectric laser acceleration19,20,27. Our work introduces a universal platform for exploring free-electron quantum optics28-31, with potential future developments in strong coupling, local quantum probing and electron-photon entanglement.

Low-loss broadband bi-layer edge couplers for visible light

Low-loss broadband fiber-to-chip coupling is currently challenging for visible-light photonic-integrated circuits (PICs) that need both high confinement waveguides for high-density integration and a minimum feature size above foundry lithographical limit. Here, we demonstrate bi-layer silicon nitride (SiN) edge couplers that have ≤ 4 dB/facet coupling loss with the Nufern S405-XP fiber over a broad optical wavelength range from 445 to 640 nm. The design uses a thin layer of SiN to expand the mode at the facet and adiabatically transfers the input light into a high-confinement single-mode waveguide (150-nm thick) for routing, while keeping the minimum nominal lithographic feature size at 150 nm. The achieved fiber-to-chip coupling loss is about 3 to 5 dB lower than that of single-layer designs with the same waveguide confinement and minimum feature size limitation.